FR2184995B1 - - Google Patents

Info

Publication number
FR2184995B1
FR2184995B1 FR7317978A FR7317978A FR2184995B1 FR 2184995 B1 FR2184995 B1 FR 2184995B1 FR 7317978 A FR7317978 A FR 7317978A FR 7317978 A FR7317978 A FR 7317978A FR 2184995 B1 FR2184995 B1 FR 2184995B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7317978A
Other versions
FR2184995A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2184995A1 publication Critical patent/FR2184995A1/fr
Application granted granted Critical
Publication of FR2184995B1 publication Critical patent/FR2184995B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR7317978A 1972-05-18 1973-05-17 Expired FR2184995B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4961272A JPS539712B2 (fr) 1972-05-18 1972-05-18

Publications (2)

Publication Number Publication Date
FR2184995A1 FR2184995A1 (fr) 1973-12-28
FR2184995B1 true FR2184995B1 (fr) 1976-05-28

Family

ID=12836043

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7317978A Expired FR2184995B1 (fr) 1972-05-18 1973-05-17

Country Status (6)

Country Link
US (1) US3923569A (fr)
JP (1) JPS539712B2 (fr)
CA (1) CA988628A (fr)
DE (1) DE2325106A1 (fr)
FR (1) FR2184995B1 (fr)
GB (1) GB1426600A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53113459U (fr) * 1977-02-18 1978-09-09
US4159917A (en) * 1977-05-27 1979-07-03 Eastman Kodak Company Method for use in the manufacture of semiconductor devices
US4207138A (en) * 1979-01-17 1980-06-10 Rca Corporation Mercury vapor leaching from microelectronic substrates
JPS55123958A (en) * 1979-03-15 1980-09-24 Tokyo Shibaura Electric Co Air conditioner
US4366186A (en) * 1979-09-27 1982-12-28 Bell Telephone Laboratories, Incorporated Ohmic contact to p-type InP
US4285763A (en) * 1980-01-29 1981-08-25 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V semiconductor compounds
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US4689115A (en) * 1985-04-26 1987-08-25 American Telephone And Telegraph Company, At&T Bell Laboratories Gaseous etching process
US8734661B2 (en) * 2007-10-15 2014-05-27 Ebara Corporation Flattening method and flattening apparatus
FR3038127B1 (fr) * 2015-06-24 2017-06-23 Commissariat Energie Atomique Procede de fabrication d'une pluralite de dipoles en forme d'ilots ayant des electrodes auto-alignees

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6501786A (fr) * 1964-02-26 1965-08-27
FR1450842A (fr) * 1964-07-20 1966-06-24 Siemens Ag Procédé pour réaliser des couches d'oxyde, planes et très pures, sur des monocristaux de silicium
US3390011A (en) * 1965-03-23 1968-06-25 Texas Instruments Inc Method of treating planar junctions
US3518132A (en) * 1966-07-12 1970-06-30 Us Army Corrosive vapor etching process for semiconductors using combined vapors of hydrogen fluoride and nitrous oxide

Also Published As

Publication number Publication date
JPS539712B2 (fr) 1978-04-07
CA988628A (en) 1976-05-04
GB1426600A (en) 1976-03-03
US3923569A (en) 1975-12-02
USB361265I5 (fr) 1975-01-28
DE2325106A1 (de) 1973-11-29
JPS4916378A (fr) 1974-02-13
FR2184995A1 (fr) 1973-12-28

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Legal Events

Date Code Title Description
ST Notification of lapse