USB334868I5 - - Google Patents

Info

Publication number
USB334868I5
USB334868I5 US33486873A USB334868I5 US B334868 I5 USB334868 I5 US B334868I5 US 33486873 A US33486873 A US 33486873A US B334868 I5 USB334868 I5 US B334868I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of USB334868I5 publication Critical patent/USB334868I5/en
Application granted granted Critical
Publication of US3919469A publication Critical patent/US3919469A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/10DRAM devices comprising bipolar components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/197Bipolar transistor image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
US334868A 1972-03-04 1973-02-22 Sensor provided with a pick-up panel Expired - Lifetime US3919469A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7202906A NL7202906A (enrdf_load_stackoverflow) 1972-03-04 1972-03-04

Publications (2)

Publication Number Publication Date
USB334868I5 true USB334868I5 (enrdf_load_stackoverflow) 1975-01-28
US3919469A US3919469A (en) 1975-11-11

Family

ID=19815512

Family Applications (1)

Application Number Title Priority Date Filing Date
US334868A Expired - Lifetime US3919469A (en) 1972-03-04 1973-02-22 Sensor provided with a pick-up panel

Country Status (9)

Country Link
US (1) US3919469A (enrdf_load_stackoverflow)
JP (1) JPS48104425A (enrdf_load_stackoverflow)
CA (1) CA994469A (enrdf_load_stackoverflow)
DE (1) DE2309366A1 (enrdf_load_stackoverflow)
ES (1) ES412254A1 (enrdf_load_stackoverflow)
FR (1) FR2174935B3 (enrdf_load_stackoverflow)
GB (1) GB1427239A (enrdf_load_stackoverflow)
IT (1) IT981041B (enrdf_load_stackoverflow)
NL (1) NL7202906A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544788A (en) * 1978-09-27 1980-03-29 Matsushita Electronics Corp Charge transfer method
US4571626A (en) * 1981-09-17 1986-02-18 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus
JPS5963568U (ja) * 1982-10-21 1984-04-26 大日本スクリ−ン製造株式会社 画像走査記録装置における画像信号の検出器
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
US5210434A (en) * 1983-07-02 1993-05-11 Canon Kabushiki Kaisha Photoelectric converter with scanning circuit
JPS6030282A (ja) * 1983-07-28 1985-02-15 Mitsubishi Electric Corp 固体撮像装置
JPS61252659A (ja) * 1985-05-01 1986-11-10 Canon Inc 光電変換装置
JPH0793704B2 (ja) * 1985-07-19 1995-10-09 株式会社日立製作所 固体撮像装置
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
US5260592A (en) * 1991-02-19 1993-11-09 Synaptics, Incorporated Integrating photosensor and imaging system having wide dynamic range with varactors
US5097305A (en) * 1991-02-19 1992-03-17 Synaptics Corporation Integrating photosensor and imaging system having wide dynamic range

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562418A (en) * 1966-12-05 1971-02-09 Gen Electric Solid state image converter system
US3660667A (en) * 1970-06-22 1972-05-02 Rca Corp Image sensor array in which each element employs two phototransistors one of which stores charge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562418A (en) * 1966-12-05 1971-02-09 Gen Electric Solid state image converter system
US3660667A (en) * 1970-06-22 1972-05-02 Rca Corp Image sensor array in which each element employs two phototransistors one of which stores charge

Also Published As

Publication number Publication date
JPS48104425A (enrdf_load_stackoverflow) 1973-12-27
CA994469A (en) 1976-08-03
IT981041B (it) 1974-10-10
US3919469A (en) 1975-11-11
DE2309366A1 (de) 1973-09-06
FR2174935B3 (enrdf_load_stackoverflow) 1976-03-05
FR2174935A1 (enrdf_load_stackoverflow) 1973-10-19
ES412254A1 (es) 1976-01-01
GB1427239A (en) 1976-03-10
NL7202906A (enrdf_load_stackoverflow) 1973-09-07

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