GB1427239A - Sensor provided with a pick-up panel - Google Patents
Sensor provided with a pick-up panelInfo
- Publication number
- GB1427239A GB1427239A GB996473A GB996473A GB1427239A GB 1427239 A GB1427239 A GB 1427239A GB 996473 A GB996473 A GB 996473A GB 996473 A GB996473 A GB 996473A GB 1427239 A GB1427239 A GB 1427239A
- Authority
- GB
- United Kingdom
- Prior art keywords
- row
- conductors
- column
- collectors
- march
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 abstract 7
- 239000011159 matrix material Substances 0.000 abstract 2
- 101100234822 Caenorhabditis elegans ltd-1 gene Proteins 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14681—Bipolar transistor imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/10—DRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Electromagnetism (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
1427239 T.V. camera targets PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 1 March 1973 [4 March 1972] 9964/73 Heading H1K [Also in Division H4] In a television camera type pick-up panel arrangement comprising a matrix of light detectors, e.g. phototransistors T 21 , T 22 ... connected between the intersections of a crossbar system of row A 20 ... and column A 01 , A 02 ... conductors, in which the video output signal is derived by sequentially applying reference voltage pulses to the row and column conductors from row and column scanning generators, the pulses from the row scanning generator are applied to the bases of transistors bT 20 ... (via conductors A 21 ...) the emitters eT 20 ... of which are connected to the row conductors A 20 ... and the collectors of which are interconnected A 00 and supply the video output signal to an output circuit. The collectors cT 21 , cT 22 ... of each row of transistors comprise a common comb-shaped collector island (see Fig. 3a) and with the conductors A 20 ... comprise the row conductors of the matrix. The rectangles with diagonals in Fig. 3a comprise connection apertures through a transparent silicon oxide insulating layer for the various column A 01 , A 02 ... row A 10 , A 20 ... row scanning input A 11 , A 21 ... and output A 00 conductors.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7202906A NL7202906A (en) | 1972-03-04 | 1972-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1427239A true GB1427239A (en) | 1976-03-10 |
Family
ID=19815512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB996473A Expired GB1427239A (en) | 1972-03-04 | 1973-03-01 | Sensor provided with a pick-up panel |
Country Status (9)
Country | Link |
---|---|
US (1) | US3919469A (en) |
JP (1) | JPS48104425A (en) |
CA (1) | CA994469A (en) |
DE (1) | DE2309366A1 (en) |
ES (1) | ES412254A1 (en) |
FR (1) | FR2174935B3 (en) |
GB (1) | GB1427239A (en) |
IT (1) | IT981041B (en) |
NL (1) | NL7202906A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2128841A (en) * | 1982-10-21 | 1984-05-02 | Dainippon Screen Mfg | Image detection device |
GB2144265A (en) * | 1983-07-28 | 1985-02-27 | Mitsubishi Electric Corp | Solid-state image sensor |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5544788A (en) * | 1978-09-27 | 1980-03-29 | Matsushita Electronics Corp | Charge transfer method |
US4571626A (en) * | 1981-09-17 | 1986-02-18 | Matsushita Electric Industrial Co., Ltd. | Solid state area imaging apparatus |
US4686554A (en) * | 1983-07-02 | 1987-08-11 | Canon Kabushiki Kaisha | Photoelectric converter |
US5210434A (en) * | 1983-07-02 | 1993-05-11 | Canon Kabushiki Kaisha | Photoelectric converter with scanning circuit |
JPS61252659A (en) * | 1985-05-01 | 1986-11-10 | Canon Inc | Photoelectric conversion device |
JPH0793704B2 (en) * | 1985-07-19 | 1995-10-09 | 株式会社日立製作所 | Solid-state imaging device |
US5260592A (en) * | 1991-02-19 | 1993-11-09 | Synaptics, Incorporated | Integrating photosensor and imaging system having wide dynamic range with varactors |
US5324958A (en) * | 1991-02-19 | 1994-06-28 | Synaptics, Incorporated | Integrating imaging systgem having wide dynamic range with sample/hold circuits |
US5097305A (en) * | 1991-02-19 | 1992-03-17 | Synaptics Corporation | Integrating photosensor and imaging system having wide dynamic range |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3562418A (en) * | 1966-12-05 | 1971-02-09 | Gen Electric | Solid state image converter system |
US3660667A (en) * | 1970-06-22 | 1972-05-02 | Rca Corp | Image sensor array in which each element employs two phototransistors one of which stores charge |
-
1972
- 1972-03-04 NL NL7202906A patent/NL7202906A/xx unknown
-
1973
- 1973-02-22 US US334868A patent/US3919469A/en not_active Expired - Lifetime
- 1973-02-24 DE DE19732309366 patent/DE2309366A1/en active Pending
- 1973-02-28 CA CA164,802A patent/CA994469A/en not_active Expired
- 1973-03-01 GB GB996473A patent/GB1427239A/en not_active Expired
- 1973-03-01 IT IT21093/73A patent/IT981041B/en active
- 1973-03-02 ES ES412254A patent/ES412254A1/en not_active Expired
- 1973-03-02 FR FR7307536A patent/FR2174935B3/fr not_active Expired
- 1973-03-05 JP JP48025960A patent/JPS48104425A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2128841A (en) * | 1982-10-21 | 1984-05-02 | Dainippon Screen Mfg | Image detection device |
US4566041A (en) * | 1982-10-21 | 1986-01-21 | Dainippon Screen Mfg. Co., Ltd. | Picture signal detector and detection method for image reproducing system |
GB2144265A (en) * | 1983-07-28 | 1985-02-27 | Mitsubishi Electric Corp | Solid-state image sensor |
Also Published As
Publication number | Publication date |
---|---|
FR2174935A1 (en) | 1973-10-19 |
JPS48104425A (en) | 1973-12-27 |
ES412254A1 (en) | 1976-01-01 |
FR2174935B3 (en) | 1976-03-05 |
DE2309366A1 (en) | 1973-09-06 |
USB334868I5 (en) | 1975-01-28 |
IT981041B (en) | 1974-10-10 |
US3919469A (en) | 1975-11-11 |
NL7202906A (en) | 1973-09-07 |
CA994469A (en) | 1976-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |