USB311264I5 - - Google Patents

Info

Publication number
USB311264I5
USB311264I5 US311264DD USB311264I5 US B311264 I5 USB311264 I5 US B311264I5 US 311264D D US311264D D US 311264DD US B311264 I5 USB311264 I5 US B311264I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of USB311264I5 publication Critical patent/USB311264I5/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness
US311264D 1964-12-31 Pending USB311264I5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42269564A 1964-12-31 1964-12-31
US425542A US3468728A (en) 1964-12-31 1965-01-14 Method for forming ohmic contact for a semiconductor device
US660528A US3390025A (en) 1964-12-31 1967-08-14 Method of forming small geometry diffused junction semiconductor devices by diffusion

Publications (1)

Publication Number Publication Date
USB311264I5 true USB311264I5 (de) 1900-01-01

Family

ID=27411372

Family Applications (4)

Application Number Title Priority Date Filing Date
US311264D Pending USB311264I5 (de) 1964-12-31
US422695D Pending USB422695I5 (de) 1964-12-31
US425542A Expired - Lifetime US3468728A (en) 1964-12-31 1965-01-14 Method for forming ohmic contact for a semiconductor device
US660528A Expired - Lifetime US3390025A (en) 1964-12-31 1967-08-14 Method of forming small geometry diffused junction semiconductor devices by diffusion

Family Applications After (3)

Application Number Title Priority Date Filing Date
US422695D Pending USB422695I5 (de) 1964-12-31
US425542A Expired - Lifetime US3468728A (en) 1964-12-31 1965-01-14 Method for forming ohmic contact for a semiconductor device
US660528A Expired - Lifetime US3390025A (en) 1964-12-31 1967-08-14 Method of forming small geometry diffused junction semiconductor devices by diffusion

Country Status (6)

Country Link
US (4) US3468728A (de)
DE (1) DE1514915C2 (de)
FR (1) FR1462032A (de)
GB (1) GB1124080A (de)
NL (1) NL6517007A (de)
SE (1) SE313120B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1188879A (en) * 1967-12-13 1970-04-22 Matsushita Electronics Corp Planar Transistor
US3988214A (en) * 1968-06-17 1976-10-26 Nippon Electric Company, Ltd. Method of fabricating a semiconductor device
NL6907227A (de) * 1969-05-10 1970-11-12
US3634203A (en) * 1969-07-22 1972-01-11 Texas Instruments Inc Thin film metallization processes for microcircuits
US3660157A (en) * 1969-08-18 1972-05-02 Computervision Corp Enhanced contrast semiconductor wafer alignment target
US3766446A (en) * 1969-11-20 1973-10-16 Kogyo Gijutsuin Integrated circuits comprising lateral transistors and process for fabrication thereof
US3653898A (en) * 1969-12-16 1972-04-04 Texas Instruments Inc Formation of small dimensioned apertures
US3713911A (en) * 1970-05-26 1973-01-30 Westinghouse Electric Corp Method of delineating small areas as in microelectronic component fabrication
JPS49100964A (de) * 1973-01-31 1974-09-24
US3919005A (en) * 1973-05-07 1975-11-11 Fairchild Camera Instr Co Method for fabricating double-diffused, lateral transistor
US3904454A (en) * 1973-12-26 1975-09-09 Ibm Method for fabricating minute openings in insulating layers during the formation of integrated circuits
US4337475A (en) * 1979-06-15 1982-06-29 Gold Star Semiconductor, Ltd. High power transistor with highly doped buried base layer
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
FR2460037A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede d'auto-alignement de regions differemment dopees d'une structure de semi-conducteur
JPS56110229A (en) * 1980-02-06 1981-09-01 Nec Corp Manufacture of semiconductor device
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
US4462041A (en) * 1981-03-20 1984-07-24 Harris Corporation High speed and current gain insulated gate field effect transistors
US4454004A (en) * 1983-02-28 1984-06-12 Hewlett-Packard Company Utilizing controlled illumination for creating or removing a conductive layer from a SiO2 insulator over a PN junction bearing semiconductor
JP2834797B2 (ja) * 1989-10-25 1998-12-14 株式会社リコー 薄膜形成装置
CN102310602B (zh) * 2010-06-30 2014-03-26 鸿富锦精密工业（深圳）有限公司 铝塑复合结构及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251064A (de) * 1955-11-04
NL190814A (de) * 1957-08-07 1900-01-01
NL253834A (de) * 1959-07-21 1900-01-01
NL296565A (de) * 1962-10-16
US3245794A (en) * 1962-10-29 1966-04-12 Ihilco Corp Sequential registration scheme
US3300339A (en) * 1962-12-31 1967-01-24 Ibm Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
DE1250790B (de) * 1963-12-13 1967-09-28 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper

Also Published As

Publication number Publication date
NL6517007A (de) 1966-07-04
DE1514915C2 (de) 1974-01-03
US3468728A (en) 1969-09-23
USB422695I5 (de) 1900-01-01
DE1514915B1 (de) 1971-03-25
FR1462032A (fr) 1966-12-09
US3390025A (en) 1968-06-25
SE313120B (de) 1969-08-04
GB1124080A (en) 1968-08-21

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