US9551941B2 - Illumination system for an EUV lithography device and facet mirror therefor - Google Patents

Illumination system for an EUV lithography device and facet mirror therefor Download PDF

Info

Publication number
US9551941B2
US9551941B2 US14/796,164 US201514796164A US9551941B2 US 9551941 B2 US9551941 B2 US 9551941B2 US 201514796164 A US201514796164 A US 201514796164A US 9551941 B2 US9551941 B2 US 9551941B2
Authority
US
United States
Prior art keywords
facet
illumination system
elements
mirror
euv radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US14/796,164
Other languages
English (en)
Other versions
US20160004164A1 (en
Inventor
Johannes Ruoff
Ingo Saenger
Joerg Zimmermann
Daniel Kraehmer
Christoph Hennerkes
Frank Schlesener
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to US14/796,164 priority Critical patent/US9551941B2/en
Assigned to CARL ZEISS SMT GMBH reassignment CARL ZEISS SMT GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SCHLESENER, FRANK, HENNERKES, Christoph, KRAEHMER, DANIEL, RUOFF, JOHANNES, SAENGER, INGO, ZIMMERMANN, JOERG
Publication of US20160004164A1 publication Critical patent/US20160004164A1/en
Application granted granted Critical
Publication of US9551941B2 publication Critical patent/US9551941B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0933—Systems for active beam shaping by rapid movement of an element
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0977—Reflective elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD

Definitions

  • the invention relates to an illumination system for an EUV lithography device, comprising: a first facet mirror having facet elements that reflect EUV radiation, and a second facet mirror having facet elements for reflecting the EUV radiation reflected by the first facet mirror onto an illumination field of the illumination system.
  • the invention also relates to an EUV lithography device comprising such an illumination system, and to a facet mirror comprising at least one diffractive facet element.
  • optical elements in the form of facet mirrors are used to generate a homogenization of the radiation generated by an EUV light source on an illumination field illuminated by the illumination system.
  • a first facet mirror which is also designated as field facet mirror, is typically used to generate secondary light sources in the illumination system.
  • the second facet mirror is arranged at the location of the secondary light sources generated by the first facet mirror and is designated as pupil facet mirror.
  • the facet elements of the second facet mirror serve for imaging the facet elements of the first facet mirror onto the illumination field.
  • the geometry of the facet elements e.g. square, rectangular, . . . ) of the first facet mirror therefore typically corresponds to the geometry of the illumination field.
  • the object is achieved in accordance with a first aspect via an illumination system of the type mentioned in the introduction wherein at least one of the facet elements of the first facet mirror or of the second facet mirror is designed as a diffractive optical element for diffracting the EUV radiation.
  • the invention proposes producing the required beam shaping of a facet element by diffraction, i.e. by the diffraction of the incident EUV radiation at a grating structure predefined by the facet element, rather than by a predefined, e.g. spherical, surface form.
  • the substrate is provided with a binary (single-step) surface structure, to which a reflective multilayer coating is applied.
  • a phase hologram can be generated by the layers of the multilayer coating being applied as conformally as possible.
  • a facet element as a diffractive optical element makes it possible to convert an (almost) arbitrary incident beam profile of the EUV radiation into a desired reflected, resp., diffracted beam profile.
  • each facet element of one or both facet mirrors can be equipped with individually adapted diffractive properties in order to generate an ideal beam profile for each partial beam or channel of the illumination system. Since the beam shaping of the EUV radiation takes place via diffraction, the surface forms of the facet elements can be chosen such that the production thereof is simplified.
  • diffractive optical elements in an illumination system is that diffractive optical elements intermix the incident radiation in their active region and thus improve the homogenization or the uniformity of the illumination radiation.
  • a respective facet element of the first facet mirror can be used to illuminate a facet element—assigned thereto—of the pupil facet mirror as homogeneously as possible, for example with a “top hat” illumination distribution.
  • At least one of the facet elements of the second facet mirror is designed as a diffractive optical element for illuminating only a part of the illumination field.
  • the angular distribution or the pupil of the illumination field can in this way be chosen differently for different parts of the illumination field, that is to say that it is possible to generate an illumination field with a pupil that varies in a location-dependent manner over the illumination field.
  • a pupil distribution in the manner of an X-dipole i.e.
  • a dipole which is oriented in the direction of the short side of the illumination field while in the outer partial regions of the illumination field it is possible to realize a Y-dipole, i.e. a dipole which is oriented in the direction of the long side of the illumination field, or vice versa.
  • the entire illumination field is typically illuminated by a respective facet element of the pupil facet mirror.
  • the illumination field is typically rectangular and has a high aspect ratio of e.g. 20:1, the short side running parallel to the scanning direction.
  • the geometry of the facet elements of the field facet mirror generally corresponds to the geometry of the illumination field. If appropriate, however, with the use of diffractive facet elements at the pupil facet mirror it is possible to choose a geometry that deviates from the geometry of the illumination field, i.e. it is possible to choose a different aspect ratio for the field facet elements, if appropriate even a square geometry.
  • the facet element is designed for illuminating a part of the illumination field, which part comprises at least two non-contiguous partial regions.
  • a diffractive optical element enables the simultaneous illumination of a part of the illumination field, which part comprises two (or possibly more) non-contiguous partial regions, specifically by the incident EUV radiation being diffracted into different orders of diffraction (e.g. ⁇ 1 st and +1 st order of diffraction).
  • the second facet mirror has a plurality of first facet elements for illuminating a first part of the illumination field and a plurality of second facet elements for illuminating a second part of the illumination field, the second part being different from the first part.
  • provision can also be made of third, fourth, . . . facet elements for illuminating a third, fourth, . . . part of the illumination field, wherein the parts of the illumination field can in each case differ from one another.
  • the pupil facet mirror can be configured here in particular in such a way that the parts of the illumination field which are illuminated by different types of facet elements complement one another to form the total illumination field.
  • the parts of the illumination field which are illuminated by the respective first, second, . . . facet elements of the pupil facet mirror can also be overlaps between the parts of the illumination field which are illuminated by the respective first, second, . . . facet elements of the pupil facet mirror.
  • This is advantageous in particular for the case where three, in particular four or more different types of facet elements are provided at the pupil facet mirror, which can be selected, if appropriate, during exposure operation depending on the mask structure to be illuminated.
  • the selection of the facet elements of the pupil facet mirror and thus the location-dependent pupil of the illumination field can be adapted to that partial region (strip) of the mask which is respectively to be imaged and which is currently situated in the illumination field.
  • facet elements of the first facet mirror can be changed over between a first position for illuminating the first facet elements and a second position for illuminating the second facet elements.
  • the facet elements of the first facet mirror are typically switchable between at least two (angular) positions in order to select in a targeted manner those (first or second) facet elements of the pupil facet mirror which serve for realizing the desired pupil shape in the illumination field.
  • typically a plurality of switching positions (at least two) can be chosen, in which the radiation is incident at two (or more) different angles or (narrow) angular distributions.
  • the facet elements of the second facet mirror form a grid arrangement in which first facet elements alternate with second facet elements. It has proved to be advantageous if facet elements for illuminating different partial regions of the illumination field are arranged at a comparatively small distance from one another. In this way, the difference or the difference angle of the facet elements of the field facet mirror between the first position for illuminating the first facet elements of the pupil facet mirror and the second position for illuminating the second facet elements of the pupil facet mirror (and, if appropriate, third, fourth, . . . facet elements) is comparatively small. This is advantageous since the reflectivity of the facet elements of the field facet mirror is typically optimized only for a narrow angle-of-incidence range.
  • At least one of the facet elements is designed as a diffractive optical element for deflecting EUV radiation onto a radiation sensor.
  • the diffractive optical element can be designed, in particular, to reflect only a part of the radiation power of the incident EUV radiation into a higher order of diffraction, while the main part of the radiation power is used for illuminating the illumination field.
  • the radiation sensor detects the radiation intensity or the power of the incident EUV radiation and can serve for checking and, if appropriate, for regulating the power of an EUV light source disposed upstream of the illumination system.
  • At least one of the facet elements has, in particular all the facet elements have, a planar surface form.
  • Facet elements having a (substantially) planar surface geometry can be produced with greater precision compared with other, e.g. spherical, surface forms.
  • spherical surface form typically used for the facet elements there is possibly the problem in addition that adjacent facet elements can mutually shade one another in their adjacent edge regions.
  • a planar surface form is understood to be a surface form in which the substrate used has a planar geometry before the surface structuring that is possibly carried out (see below).
  • At least one diffractive facet element has a substrate having a profiled surface and a multilayer coating for reflecting EUV radiation, the multilayer coating being applied to the substrate.
  • the multilayer coating typically has a plurality of individual layers consisting of different materials, wherein typically alternating layers composed of two materials having different refractive indices are used.
  • the layer thicknesses and the layer materials of the individual layers are adapted to the EUV radiation wavelength to be reflected at the facet element.
  • the facet element has a profiled surface.
  • the surface profile can be for example a binary profile, i.e. a profile having only one step or one step height.
  • the substrate has a multi-step surface profile. Via a two-, three-, four-, . . . , n-step surface profile, it is possible to approximate for example a sawtooth-like surface structure and thus the triangular geometry of a sawtooth or of a blazed grating. By choosing a suitable blaze angle adapted to the wavelength and the distance between the approximated sawtooth structures, it is possible to select in a targeted manner an order of diffraction into which the incident EUV radiation is reflected, in order to increase the diffraction efficiency.
  • the blazed profile can be used for example to produce a diffractive optical element in the manner of a Fresnel lens, that is to say that the EUV radiation is deflected only into a single order of diffraction.
  • diffractive optical elements in which the at least two-step, preferably multi-step, surface profile is irregular and does not have a clearly defined periodicity, with the result that no discrete orders of diffraction can be distinguished.
  • a multi-step surface profile can increase the diffraction efficiency.
  • At least one diffractive element has a grating structure, which is typically embodied as a profiled surface of the substrate, the grating structure having a lateral extent of the order of magnitude of the wavelength of the EUV radiation.
  • the lateral extent of the grating structure (also referred to as a grating constant or pitch) is typically of the order of magnitude of the wavelength ⁇ of the reflected, resp., diffracted EUV radiation, i.e. the lateral extent of the grating structure typically does not exceed 50 ⁇ , preferably 10 ⁇ , more preferably 5 ⁇ .
  • the maximum lateral extent of the grating structure does not exceed 750 nm and is preferably 150 nm or less, in particular 75 nm or less.
  • the wavelength ⁇ of the EUV radiation is smaller than 15 nm, e.g. 13.5 nm, the lateral extent of the grating structure is reduced accordingly.
  • a further aspect of the invention relates to an EUV lithography device comprising an illumination system embodied as described above.
  • the illumination system serves for illuminating as homogeneously as possible an image field in a plane in which a structure (mask) to be imaged is arranged.
  • an angular distribution dependent on the location or on a respectively illuminated part of the illumination field can be generated.
  • a facet mirror in particular for an illumination system as described above, comprising: at least one diffractive facet element for reflecting EUV radiation, comprising: a substrate and a multilayer coating that reflects EUV radiation, the multilayer coating being applied to the substrate, wherein the at least one diffractive facet element is designed for diffracting the EUV radiation.
  • the at least one diffractive facet element has a grating structure, typically being embodied as a profiled surface of the substrate, having a lateral extent of the order of magnitude of the EUV radiation.
  • the lateral extent is typical 50 ⁇ or less, 10 ⁇ or less, in particular 5 ⁇ or less, wherein ⁇ designates the wavelength of the EUV radiation.
  • the substrate has a multi-step surface profile.
  • a sawtooth-like surface structure can be approximated or, in the case of gray-scale lithography (see below), a sawtooth-like surface structure can be produced in order to realize a diffractive optical element for example in the manner of a blazed grating and to increase the efficiency of the diffraction of the EUV radiation into a specific predefined order of diffraction.
  • the multi-step surface profile can also be designed for approximating an aperiodic surface structure.
  • the multi-step surface profile can be realized by the microstructuring of the surface for example with the aid of a lithographic method.
  • the multi-step surface profile has at least two, preferably at least three or four steps having different step heights.
  • a (quasi-) continuous height profile or surface profile is also possible, wherein individual steps are no longer discernible.
  • Such a surface profile can be produced with the aid of gray-scale lithography, for example.
  • the multilayer coating for smoothing the multi-step surface profile, has at least 100 individual layers, preferably at least 120 individual layers, in particular at least 150 individual layers.
  • an individual layer is understood to be a layer composed of a high refractive index or low refractive index material, the layer thickness and the layer material of the individual layer being coordinated with the EUV radiation wavelength to be reflected at the facet element.
  • Additional layers of the multilayer coating which are designed for example for preventing diffusion or for protecting the multilayer coating against contaminating substances present in the environment, are not regarded as individual layers within the meaning of this application.
  • the lateral extent of the grating structures lies in a range significantly smaller than the wavelength of the EUV radiation, since the layer thicknesses of the individual layers lie approximately in this range and the individual layers grow conformally on structures having a lateral extent comparable to or significantly greater than the layer thickness.
  • the multilayer coating can be applied via a conventional coating method, i.e. in a planar manner.
  • conventional deposition of the layer materials from the gas phase can be used for applying the multilayer coating.
  • the smoothing layer is typically mechanically smoothed or polished, with the result that it has or approximates the desired surface profile.
  • Conventional materials suitable for smoothing for example Si or SiO 2 , can be used as materials for the smoothing layer.
  • the multilayer coating is applied to the smoothing layer.
  • the facet mirror is used as a pupil facet mirror, it is possible, in particular, for the multi-step surface profile of the first facet elements, which are used for illuminating a first part of the illumination field, to differ from a multi-step surface profile of the second facet elements, which are used for illuminating the second part of the illumination field.
  • the surface profiles of the first and/or second facet elements also differ among one another, wherein a dedicated, individual surface profile can be defined in particular for each facet element.
  • the grating period of the diffraction grating formed at the surface of the diffractive optical element is also dependent, if appropriate, on the location on the substrate surface, that is to say that it is not absolutely necessary for the substrate to have only a single period length that is constant over the surface.
  • the blaze angle of the sawtooth-like surface structure possibly approximated by the profiled surface.
  • FIG. 1 shows a schematic illustration of an EUV lithography apparatus comprising an illumination system for illuminating an illumination field
  • FIG. 2 shows a schematic illustration of a pupil facet mirror for the illumination system from FIG. 1 having first and second diffractive facet elements designed for illuminating different parts of the illumination field,
  • FIG. 3 shows an illustration of the pupil facet mirror from FIG. 2 for generating a field-dependent pupil illumination of the illumination field
  • FIGS. 4 a - c show three schematic illustrations of a substrate having a structured surface (grating structure) having a binary surface profile ( FIG. 4 a ) and having a two- and respectively four-step surface profile for approximating a sawtooth-like surface structure ( FIGS. 4 b,c ).
  • FIG. 1 schematically shows an EUV lithography apparatus 1 .
  • the latter comprises an EUV light source 2 for generating EUV radiation having a high energy density in an EUV wavelength range of below 50 nm, in particular between approximately 5 nm and approximately 15 nm.
  • the EUV light source 2 can be embodied for example in the form of a plasma light source for generating a laser-induced plasma or as a synchrotron radiation source.
  • a collector mirror 3 in order to focus the EUV radiation of the EUV light source 2 to form an illumination beam 4 and, in this way, to increase the energy density further.
  • the illumination beam 4 has a wavelength spectrum which is concentrated in a narrowband wavelength range around an operating wavelength ⁇ B , at which the EUV lithography apparatus 1 is operated.
  • a monochromator 12 is used for selecting the operating wavelength ⁇ B or for selecting the narrowband wavelength range.
  • the illumination beam 4 serves for illuminating a structured object M via an illumination system 10 , which comprises four reflective optical elements 13 to 16 in the present example.
  • the structured object M can be a reflective mask, for example, which has reflective and non-reflective or at least less reflective regions for producing at least one structure on the object M.
  • the structured object M can be a plurality of micromirrors which are arranged in a one- or multidimensional arrangement and which, if appropriate, are movable about at least one axis in order to set the angle of incidence of the EUV radiation 4 on the respective mirror.
  • the structured object M reflects a part of the illumination beam 4 and shapes a projection beam 5 , which carries the information about the structure of the structured object M and which is radiated into a projection lens 20 , which generates an imaging of the structured object M or of a respective partial region thereof on a substrate W.
  • the substrate W for example a wafer, comprises a semiconductor material, e.g. silicon, and is arranged on a mount, which is also designated as a wafer stage WS.
  • the first and second reflective elements 13 , 14 in the illumination system 10 are embodied as facet mirrors and have a plurality of facet elements in the form of micromirrors arranged in a grid arrangement.
  • FIG. 1 shows four facet elements 13 a - d , 14 a - d by way of example for each facet mirror 13 , 14 , at which facet elements the illumination beam 4 or a respective partial beam of the illumination beam 4 is reflected.
  • the first optical element 13 is also designated hereinafter as field facet mirror 13 and serves for generating secondary light sources in the illumination system 10 .
  • the second optical element 14 is arranged at the location of the secondary light sources generated by the first optical element 13 and is also designated hereinafter as pupil facet mirror 14 .
  • a partial beam of the illumination beam 4 which is incident on a respective facet element 13 a - d of the field facet mirror 13 is deflected at the element onto a respective facet element 14 a - d of the pupil facet mirror 14 .
  • the facet elements 13 a - d of the field facet mirror 13 can be rectangular and have an aspect ratio (x:y) of e.g. 20:1, the X-direction running perpendicular to the plane of the drawing in FIG. 1 .
  • the aspect ratio of the facet elements 13 a - d corresponds to the aspect ratio of the, for example rectangular, illumination field illuminated by the illumination system 10 . It goes without saying that illumination fields and/or facet elements 13 a - d having a different geometry from a rectangular geometry are likewise possible.
  • each of the facet elements 13 a - d of the field facet mirror 13 can be tilted about an axial direction parallel to the X-direction.
  • a respective facet element 13 a - d can, if appropriate, also be tiltable about a further axis, lying in the XZ-plane (plane of the drawing).
  • the direction in which the illumination beam 4 is incident on the facet elements 13 a - d can be set in this way.
  • the assignment between the facet elements 13 a - d of the field facet mirror 13 and the facet elements 14 a - d of the pupil facet mirror 14 can also be varied in order to generate a desired illumination distribution (illumination pupil or angular distribution) at the location of the illuminated object M, as described in greater detail further below.
  • a 1:1 assignment between the facet elements 13 a - d of the field facet mirror 13 and the facet elements 14 a - d of the pupil facet mirror 14 is chosen.
  • an assignment can also be effected in such a way that two or more of the facet elements 13 a - d of the field facet mirror 13 are assigned to a facet element 14 a - d of the pupil facet mirror 14 in order to set different illumination modes. Details in this regard can be found in US 2009/0041182 A1 in the name of the present applicant, to which reference is made in its entirety.
  • the facet elements 13 a - d , 14 a - d are embodied as diffractive optical elements, that is to say that the latter have diffractive grating structures in order to perform the desired beam shaping of the illumination beam 4 or of a respective partial beam of the illumination beam 4 .
  • the surface form of the facet elements 13 a - d , 14 a - d can be chosen such that the latter can be manufactured in a simple manner.
  • the facet elements 13 a - d , 14 a - d have a planar surface form or surface geometry. This surface form, firstly, can be produced easily and, secondly, prevents a partial mutual shading of the facet elements 13 a - d , 14 a - d of the respective facet mirrors 13 , 14 .
  • the diffractive structures of the facet elements 13 a - d of the field facet mirror 13 are chosen in such a way that the latter generate a “top hat”-like profile of the respectively reflected partial beam of the illumination beam 4 and thus increase the uniformity of the illumination radiation 4 incident on a respective facet element 14 a - d of the pupil facet mirror 14 .
  • the diffractive structures of one of the facet elements 13 d of the field facet mirror 13 are embodied such that a proportion of the intensity of the incident illumination beam 4 is diffracted into a higher order of diffraction, with the result that this proportion of the intensity is not incident on the pupil facet mirror 14 , but rather on a radiation sensor 25 .
  • the radiation sensor 25 serves for measuring the intensity of the incident EUV radiation and can be used for checking the function of the EUV light source 2 . It goes without saying that the measured radiation intensity can also be used for regulating the radiation power of the EUV light source 2 , for example by the measurement signal of the radiation sensor 2 being fed to a control unit (not shown) for controlling or for regulating the operation of the EUV lithography device 1 .
  • a respective facet element 14 a - d can illuminate in a targeted manner only a part of the rectangular illumination field BF which is shown in FIG. 2 and which is generated by the illumination system 10 in the plane with the structured object M.
  • a number of first facet elements 14 a , 14 c , . . . are designed for illuminating a first part T 1 of the illumination field BF, while a number of second facet elements 14 b , 14 d , . . . serve for illuminating a second part T 2 of the illumination field BF, wherein the first part T 1 and the second part T 2 cover the entire area of the illumination field BF.
  • the first part T 1 of the illumination field BF is composed of two non-contiguous partial regions A 1 , A 2 formed at the left and right edges, respectively, of the illumination field BF.
  • the simultaneous illumination of non-contiguous partial regions A 1 , A 2 of the illumination field BF is possible since the first facet elements 14 a , 14 c , . . . are embodied as diffractive optical elements, in which the incident EUV radiation can be diffracted into different orders of diffraction and thus in different directions.
  • the second, central part T 2 of the illumination field BF, this part being illuminated by the second facet elements 14 b , 14 d , . . . is embodied, by contrast, as a single, contiguous region.
  • first and second facet elements 14 a - d of the pupil facet mirror 14 are arranged in a grid, wherein first facet elements 14 a , 14 c , . . . alternate with second facet elements 14 b , 14 d , . . . .
  • This is advantageous in order to illuminate first facet elements 14 a , 14 c , . . . and respectively second facet elements 14 b , 14 d , . . . of the pupil facet mirror in a targeted manner with the aid of the facet elements 13 a - d of the field facet mirror 13 .
  • a respectively assigned facet element 13 a , 13 b , . . . of the field facet mirror 13 can be switched over between a first angular position W 1 and a second angular position W 2 , as illustrated in FIG. 1 by way of example on the basis of a facet element 13 a of the field facet mirror 13 .
  • the difference angle for switching over between the first angular position W 1 and the second angular position W 2 of a respectively assigned first facet element 13 a is small, which has an advantageous effect on the reflectivity of the first facet element 13 a , the reflectivity being optimized for a narrow angle-of-incidence range.
  • Actuators that are known per se and are not described in more specific detail here can serve for switching over between the angular positions W 1 , W 2 of the facet elements 13 a - d of the field facet mirror.
  • the changeover between the two angular positions W 1 , W 2 makes it possible to set in a targeted manner a pupil or angular distribution dependent on the location on the illumination field BF, as explained in greater detail below with reference to FIG. 3 , which illustrates only those facet elements 14 a , 14 c , . . . of the pupil facet mirror 14 which are illuminated by the facet elements 13 a , 13 b , . . . of the field facet mirror 13 .
  • first facet elements 14 a , 14 c , . . . in an upper and lower region of the pupil facet mirror 14 are illuminated in the manner of a dipole field distribution.
  • the spatial distribution on the pupil facet mirror 14 corresponds to the angular distribution (pupil) in the illumination field BF
  • a corresponding dipole (X-dipole) is generated in the first part T 1 of the illumination field BF.
  • the facet elements 13 a , 13 b , . . . of the field facet mirror 13 also illuminate second facet elements (not designated more specifically in FIG. 3 ) of the pupil facet mirror 14 that are arranged in a left and right partial region of the pupil facet mirror 14 .
  • the second facet elements of the pupil facet mirror 14 generate a pupil or an angular distribution in the manner of a Y-dipole in the second, central part T 2 of the illumination field BF.
  • a different angular distribution or pupil can be generated via a suitable selection of first and second facet elements 14 a - d of the pupil facet mirror 14 at different parts T 1 , T 2 of the illumination field BF.
  • angular distributions other than the X-dipole distribution and Y-dipole distribution described by way of example above can also be generated. It goes without saying that it is also possible to provide more than two different types of facet elements 14 a - d at the pupil facet mirror 14 in order to illuminate more than two parts of the illumination field BF with different angular distributions or pupils.
  • FIGS. 4 a - c show three examples of a substrate 26 which can serve for producing a diffractive facet element 13 a - d , 14 a - d embodied as described above.
  • the substrate 26 has a profiled surface 26 a , to which a multilayer coating 28 is applied which is shown only in FIG. 4 a for the sake of simplicity, the multilayer coating reflecting EUV radiation 4 at the operating wavelength ⁇ B .
  • the reflective multilayer coating 28 has a plurality of individual layers 29 a , 29 b consisting of different materials. In the present example, the individual layers are formed alternately from materials having different refractive indices.
  • the individual layers 29 a , 29 b usually consist of molybdenum and silicon.
  • Other material combinations such as e.g. molybdenum and beryllium, ruthenium and beryllium or lanthanum and B 4 C are likewise possible depending on the operating wavelength ⁇ B .
  • the profiled surface 26 a has a single-step surface profile 27 a , that is to say that one rectangular or parallelepipedal step is formed on the otherwise planar surface 26 a . It goes without saying that only a detail or a partial region of the substrate 26 is shown in FIG. 4 a , and that the partial region having a lateral extent D shown in FIG. 4 a is repeated periodically in order to form a grating structure on the profiled surface 26 a.
  • the steps S 1 and S 2 of the two-step surface profile 27 b in FIG. 4 b have a different step height and together with the planar section of the surface 26 a approximate a sawtooth profile, i.e. a triangular profile with lateral extent D forming an oblique step inclined at the so-called blaze angle ⁇ relative to the planar section of the surface 26 a of the substrate 26 .
  • the surface profiles 27 a - c which are periodic in the present example, can be produced via a microstructuring of the substrate 26 , for which purpose a lithographic method, in particular, is suitable.
  • a lithographic method in particular, is suitable.
  • a photoresist is applied to the planar surface 26 a of the substrate 26 .
  • the photoresist is exposed in a lithography apparatus in order to transfer a desired structure into the photoresist.
  • the photoresist is subsequently developed, and in the process acquires a typically two-step profile corresponding to the desired structure.
  • the profile of the photoresist is transferred to the substrate 26 by etching.
  • this process can be repeated a number of times, if appropriate. It goes without saying that as an alternative to producing a periodic surface profile, as described in connection with FIGS. 4 a - c , it is also possible to produce an aperiodic surface profile, in which no strictly periodic structures are discernible. Alternatively, the surface profile can also be structured by gray-scale lithography, whereby the production of a (quasi-)continuously variable profile is made possible.
  • the surface profile 27 b , 27 c can be smoothed by the application of the multilayer coating 28 , with the result that a substantially triangular or sawtooth-like surface profile arises at a free interface at the top side of the multilayer coating 28 .
  • the multilayer coating 28 to put it more precisely the individual layers 29 a , 29 b , are typically applied to the substrate 26 in a planar manner in a conventional coating method—typically by vapor deposition.
  • the lateral extent D of the one-step profile 27 a and of the multi-step surface profiles 27 b , 27 c , respectively, should be approximately of the order of magnitude of the wavelength of the EUV radiation used, possibly significantly smaller than the wavelength of the EUV radiation used.
  • the lateral extent D of the grating structures 27 a - c should typically not exceed 50 ⁇ B , preferably 10 ⁇ B , in particular 5 ⁇ B , the operating wavelength ⁇ B being 13.5 nm in the present example.
  • the reflective multilayer coating 28 can also comprise intermediate layers for preventing diffusion.
  • the reflective multilayer coating 28 typically also has a capping layer in order to prevent oxidation of the underlying individual layers 29 a , 29 b .
  • Metallic materials such as ruthenium, rhodium, palladium, platinum, iridium, niobium, vanadium, chromium, zinc or tin can be used as the capping layer.
  • the illustration of the auxiliary layers and of the capping layer in the figures was dispensed with in order to simplify the illustration.
  • smoothing it is also possible to apply a smoothing layer (not shown) to the top side 26 a of the substrate 26 , which smoothing layer can be formed from Si or SiO 2 , for example, and is polished (mechanically) to the blaze angle ⁇ , with the result that it approximates or produces the desired surface profile.
  • a smoothing layer can be formed from Si or SiO 2 , for example, and is polished (mechanically) to the blaze angle ⁇ , with the result that it approximates or produces the desired surface profile.
  • the substrate 26 has a planar surface form (apart from the grating structure). It goes without saying, however, that the substrate 26 can, if appropriate, also have a curved surface form, e.g. concave surface forms or convex surface forms being possible, which can be designed either in a spherical fashion or in an aspherical fashion. However, a planar surface 26 a can be produced particularly simply, and so such a surface form is preferred relative to other surface forms that are more difficult to produce.
  • the diffractive optical elements having a multi-step surface profile 27 b , 27 c as described here can be used not only as facet elements 13 a - d , 14 a - d of facet mirrors 13 , 14 for the illumination system 10 described in connection with FIG. 1 to FIG. 3 , but they can also be advantageously used in other devices for reflecting, resp., for diffracting EUV radiation.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
US14/796,164 2013-02-22 2015-07-10 Illumination system for an EUV lithography device and facet mirror therefor Active 2034-03-27 US9551941B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/796,164 US9551941B2 (en) 2013-02-22 2015-07-10 Illumination system for an EUV lithography device and facet mirror therefor

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361767986P 2013-02-22 2013-02-22
DE102013202948.9 2013-02-22
DE102013202948 2013-02-22
DE102013202948.9A DE102013202948A1 (de) 2013-02-22 2013-02-22 Beleuchtungssystem für eine EUV-Lithographievorrichtung und Facettenspiegel dafür
PCT/EP2014/052639 WO2014128025A1 (fr) 2013-02-22 2014-02-11 Système d'éclairage pour un dispositif de lithographie euv et miroir à facettes associé
US14/796,164 US9551941B2 (en) 2013-02-22 2015-07-10 Illumination system for an EUV lithography device and facet mirror therefor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2014/052639 Continuation WO2014128025A1 (fr) 2013-02-22 2014-02-11 Système d'éclairage pour un dispositif de lithographie euv et miroir à facettes associé

Publications (2)

Publication Number Publication Date
US20160004164A1 US20160004164A1 (en) 2016-01-07
US9551941B2 true US9551941B2 (en) 2017-01-24

Family

ID=51385456

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/796,164 Active 2034-03-27 US9551941B2 (en) 2013-02-22 2015-07-10 Illumination system for an EUV lithography device and facet mirror therefor

Country Status (6)

Country Link
US (1) US9551941B2 (fr)
JP (1) JP6285965B2 (fr)
KR (1) KR102179256B1 (fr)
CN (1) CN105074574B (fr)
DE (1) DE102013202948A1 (fr)
WO (1) WO2014128025A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019213063A1 (de) * 2019-08-30 2021-03-04 Carl Zeiss Smt Gmbh Optische Beugungskomponente

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006020734A1 (de) * 2006-05-04 2007-11-15 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem
CN105511231B (zh) * 2014-10-16 2019-03-29 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置
DE102016217479A1 (de) * 2016-09-14 2017-09-14 Carl Zeiss Smt Gmbh Optisches modul mit verkippbaren optischen flächen
DE102017211443A1 (de) * 2017-07-05 2019-01-10 Carl Zeiss Smt Gmbh Metrologiesystem mit einer EUV-Optik
DE102018220625A1 (de) * 2018-11-29 2020-06-04 Carl Zeiss Smt Gmbh Optisches Beleuchtungssystem für Projektionslithographie
DE102019129135A1 (de) * 2019-10-29 2021-04-29 Zumtobel Lighting Gmbh 3D-Druckverfahren zur Herstellung eines Leuchtenelements mit optischem Teil
DE102019131327A1 (de) * 2019-11-20 2021-05-20 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Messung von Substraten für die Halbleiterlithographie
DE102020200158A1 (de) * 2020-01-09 2021-07-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102021214237A1 (de) 2021-12-13 2022-12-22 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine EUV-Projektionsbelichtungsanlage
EP4386479A1 (fr) * 2022-12-12 2024-06-19 ASML Netherlands B.V. Appareil lithographique et procédé associé

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392792B1 (en) 2000-12-05 2002-05-21 The Regents Of The University Of California Method of fabricating reflection-mode EUV diffraction elements
CN1350185A (zh) 2000-10-20 2002-05-22 株式会社尼康 用于euv的多层反射镜、其波前光行差校正法及包含它的euv光学系统
US6833904B1 (en) 1998-02-27 2004-12-21 Nikon Corporation Exposure apparatus and method of fabricating a micro-device using the exposure apparatus
US20050024614A1 (en) 2003-07-09 2005-02-03 Asml Netherlands B.V. Mirror, lithographic apparatus, device manufacturing method, and device manufactured thereby
US20050270513A1 (en) * 2002-03-18 2005-12-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050275818A1 (en) 2002-08-26 2005-12-15 Wolfgang Singer Attenuator for attenuating wavelengths unequal to a used wavelength
WO2007128407A1 (fr) 2006-05-04 2007-11-15 Carl Zeiss Smt Ag systÈme d'Éclairage pour lithographie EUV ET premier et second ÉlÉmentS optiqueS À utilisER dans un système d'ECLAIRAGE de ce type
US20080049206A1 (en) 2006-08-24 2008-02-28 Carl Zeiss Smt Ag Illumination system with a detector for registering a light intensity
US20080123807A1 (en) 2006-11-28 2008-05-29 Carl Zeiss Smt Ag Illumination optics for projection microlithography
DE102007041004A1 (de) 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie
CN101727010A (zh) 2009-12-03 2010-06-09 吉林大学 利用多光束干涉光刻技术制备仿生彩色超疏水涂层的方法
CN101762987A (zh) 2008-12-23 2010-06-30 卡尔蔡司Smt股份公司 微光刻投射曝光设备的照明系统
US20100284064A1 (en) 2007-12-21 2010-11-11 Asml Netherlands B.V. Grating for euv-radiation, method for manufacturing the grating and wavefront measurement system
WO2011154244A1 (fr) 2010-06-08 2011-12-15 Carl Zeiss Smt Gmbh Système optique d'éclairage pour lithographie par projection uve
CN202133858U (zh) 2011-06-29 2012-02-01 广东工业大学 一种大面积投影光刻系统
DE102011082065A1 (de) 2011-09-02 2012-09-27 Carl Zeiss Smt Gmbh Spiegel-Array
US20120262688A1 (en) 2011-04-15 2012-10-18 Asml Netherlands B.V. Optical Apparatus for Conditioning a Radiation Beam for Use by an Object, Lithography Apparatus and Method of Manufacturing Devices
JP2012235046A (ja) 2011-05-09 2012-11-29 Nikon Corp 光学ユニット、照明光学装置、露光装置及びデバイス製造方法
DE102011084650A1 (de) 2011-10-17 2013-04-18 Carl Zeiss Smt Gmbh Diffraktive optische Elemente für EUV-Strahlung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244168A (ja) * 2000-02-25 2001-09-07 Nikon Corp 露光装置および該露光装置を用いてマイクロデバイスを製造する方法
DE102008001511A1 (de) * 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
US8867021B2 (en) * 2009-08-25 2014-10-21 Asml Netherlands B.V. Illumination system, lithographic apparatus and method of adjusting an illumination mode
JP2013516079A (ja) * 2009-12-29 2013-05-09 エーエスエムエル ネザーランズ ビー．ブイ． 照明システム、リソグラフィ装置および照明方法
DE102011004615A1 (de) * 2010-03-17 2011-09-22 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
DE102011076145B4 (de) * 2011-05-19 2013-04-11 Carl Zeiss Smt Gmbh Verfahren zum Zuordnen einer Pupillenfacette eines Pupillenfacettenspiegels einer Beleuchtungsoptik einer Projektionsbelichtungsanlage zu einer Feldfacette eines Feldfacettenspiegels der Beleuchtungsoptik

Patent Citations (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833904B1 (en) 1998-02-27 2004-12-21 Nikon Corporation Exposure apparatus and method of fabricating a micro-device using the exposure apparatus
CN1350185A (zh) 2000-10-20 2002-05-22 株式会社尼康 用于euv的多层反射镜、其波前光行差校正法及包含它的euv光学系统
US20020171922A1 (en) 2000-10-20 2002-11-21 Nikon Corporation Multilayer reflective mirrors for EUV, wavefront-aberration-correction methods for same, and EUV optical systems comprising same
US6392792B1 (en) 2000-12-05 2002-05-21 The Regents Of The University Of California Method of fabricating reflection-mode EUV diffraction elements
US20050270513A1 (en) * 2002-03-18 2005-12-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050275818A1 (en) 2002-08-26 2005-12-15 Wolfgang Singer Attenuator for attenuating wavelengths unequal to a used wavelength
US20050024614A1 (en) 2003-07-09 2005-02-03 Asml Netherlands B.V. Mirror, lithographic apparatus, device manufacturing method, and device manufactured thereby
CN1576903A (zh) 2003-07-09 2005-02-09 Asml荷兰有限公司 反射镜和使用反射镜的光刻装置
US20090041182A1 (en) 2006-05-04 2009-02-12 Carl Zeiss Smt Ag Illumination system for euv lithography
WO2007128407A1 (fr) 2006-05-04 2007-11-15 Carl Zeiss Smt Ag systÈme d'Éclairage pour lithographie EUV ET premier et second ÉlÉmentS optiqueS À utilisER dans un système d'ECLAIRAGE de ce type
US20080049206A1 (en) 2006-08-24 2008-02-28 Carl Zeiss Smt Ag Illumination system with a detector for registering a light intensity
CN101454724A (zh) 2006-08-24 2009-06-10 卡尔·蔡司Smt股份公司 具有用来获取光强度的探测器的照明系统
US20080123807A1 (en) 2006-11-28 2008-05-29 Carl Zeiss Smt Ag Illumination optics for projection microlithography
EP1927892A1 (fr) 2006-11-28 2008-06-04 Carl Zeiss SMT AG Optique d'éclairage pour la microlithographie de projection EUV, installation d'exposition par projection microlithographique et procédé de fabrication d'un composant microstructuré
DE102007041004A1 (de) 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie
CN101903808A (zh) 2007-12-21 2010-12-01 Asml荷兰有限公司 用于euv辐射的光栅、用于制造该光栅的方法和波前测量系统
US20100284064A1 (en) 2007-12-21 2010-11-11 Asml Netherlands B.V. Grating for euv-radiation, method for manufacturing the grating and wavefront measurement system
US20100277708A1 (en) 2008-12-23 2010-11-04 Carl Zeiss Smt Ag Illumination system of a microlothographic projection exposure apparatus
CN101762987A (zh) 2008-12-23 2010-06-30 卡尔蔡司Smt股份公司 微光刻投射曝光设备的照明系统
CN101727010A (zh) 2009-12-03 2010-06-09 吉林大学 利用多光束干涉光刻技术制备仿生彩色超疏水涂层的方法
WO2011154244A1 (fr) 2010-06-08 2011-12-15 Carl Zeiss Smt Gmbh Système optique d'éclairage pour lithographie par projection uve
US20120262688A1 (en) 2011-04-15 2012-10-18 Asml Netherlands B.V. Optical Apparatus for Conditioning a Radiation Beam for Use by an Object, Lithography Apparatus and Method of Manufacturing Devices
JP2012235046A (ja) 2011-05-09 2012-11-29 Nikon Corp 光学ユニット、照明光学装置、露光装置及びデバイス製造方法
CN202133858U (zh) 2011-06-29 2012-02-01 广东工业大学 一种大面积投影光刻系统
DE102011082065A1 (de) 2011-09-02 2012-09-27 Carl Zeiss Smt Gmbh Spiegel-Array
DE102011084650A1 (de) 2011-10-17 2013-04-18 Carl Zeiss Smt Gmbh Diffraktive optische Elemente für EUV-Strahlung

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Chinese office action and search report, with translation thereof, for corresponding CN Appl No. 20140009868.6, dated Aug. 3, 2016.
German Office Action and English translation thereof for corresponding DE Appl. No. 10 2013 202 948.9, 5 pages, dated Oct. 23, 2013.
International Search Report and Written Opinion for corresponding PCT Appl No. PCT/EP2014/052639, dated Jun. 4, 2014.
P. Naulleau et al., "Diffractive optical elements and their potential role in high efficiency illuminators," EUV Workshop, Lawrence Berkeley National Laboratory (2008).

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019213063A1 (de) * 2019-08-30 2021-03-04 Carl Zeiss Smt Gmbh Optische Beugungskomponente
WO2021037437A1 (fr) 2019-08-30 2021-03-04 Carl Zeiss Smt Gmbh Composant de diffraction optique
US11947265B2 (en) 2019-08-30 2024-04-02 Carl Zeiss Smt Gmbh Optical diffraction component

Also Published As

Publication number Publication date
DE102013202948A1 (de) 2014-09-11
KR102179256B1 (ko) 2020-11-18
JP2016513281A (ja) 2016-05-12
US20160004164A1 (en) 2016-01-07
JP6285965B2 (ja) 2018-02-28
CN105074574A (zh) 2015-11-18
KR20150121702A (ko) 2015-10-29
CN105074574B (zh) 2017-07-04
WO2014128025A1 (fr) 2014-08-28

Similar Documents

Publication Publication Date Title
US9551941B2 (en) Illumination system for an EUV lithography device and facet mirror therefor
TWI603154B (zh) 微影中用於投射曝光裝置之組合反射鏡
JP6504506B2 (ja) ファセットミラー
KR100589241B1 (ko) 리소그래피 장치, 디바이스 제조방법 및 그 디바이스
US6195201B1 (en) Reflective fly's eye condenser for EUV lithography
JP2015519009A5 (fr)
EP2583141B1 (fr) Système d'éclairage optique pour la microlithographie et système d'exposition par projection ayant un système d'éclairage optique de ce type
US8411251B2 (en) Optical element and illumination optics for microlithography
KR20150058228A (ko) 미러
JP7071436B2 (ja) Ｅｕｖ投影リソグラフィのための照明光学系及び照明系
US10203435B2 (en) EUV mirror and optical system comprising EUV mirror
JP6332758B2 (ja) Ｅｕｖ投影リソグラフィのための照明光学ユニット
US10146136B2 (en) Reflecting coating with optimized thickness
US10018917B2 (en) Illumination optical unit for EUV projection lithography
JP2017526969A5 (fr)
US20190155216A1 (en) Structure and manufacturing method of holographic optical elements
US20220342314A1 (en) Illumination optical system for euv projection lithography
WO2019147512A2 (fr) Structure et procédé de fabrication d'éléments optiques holographiques

Legal Events

Date Code Title Description
AS Assignment

Owner name: CARL ZEISS SMT GMBH, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:RUOFF, JOHANNES;SAENGER, INGO;ZIMMERMANN, JOERG;AND OTHERS;SIGNING DATES FROM 20150721 TO 20150811;REEL/FRAME:036617/0272

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

CC Certificate of correction
MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8