US9490208B2 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- US9490208B2 US9490208B2 US14/702,061 US201514702061A US9490208B2 US 9490208 B2 US9490208 B2 US 9490208B2 US 201514702061 A US201514702061 A US 201514702061A US 9490208 B2 US9490208 B2 US 9490208B2
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 432
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 9
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- 230000000052 comparative effect Effects 0.000 description 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 51
- 229910002601 GaN Inorganic materials 0.000 description 49
- 230000007423 decrease Effects 0.000 description 34
- 238000010586 diagram Methods 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 230000003247 decreasing effect Effects 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000006870 function Effects 0.000 description 12
- 238000000605 extraction Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- UIAFKZKHHVMJGS-UHFFFAOYSA-N 2,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1O UIAFKZKHHVMJGS-UHFFFAOYSA-N 0.000 description 7
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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Definitions
- the present invention relates to a semiconductor device.
- Group III-V nitride semiconductors namely, mixed crystal materials, such as gallium nitride (GaN), aluminum nitride (AlN), and indium nitride, the general formula of which is Al x Ga 1-x-y In y N (where 0 ⁇ x ⁇ 1 and 0 ⁇ y ⁇ 1), have physical features of a wide band gap and a direct transition band structure. Therefore, because of the features of high breakdown electric field and saturated electron velocity, application to electronic devices is also studied in addition to application to short-wavelength optical elements.
- GaN gallium nitride
- AlN aluminum nitride
- indium nitride the general formula of which is Al x Ga 1-x-y In y N (where 0 ⁇ x ⁇ 1 and 0 ⁇ y ⁇ 1)
- a Hetero-junction Field Effect Transistor (hereinafter, referred to as an HFET) in which 2-Dimensional Electron Gas (hereinafter, referred to as 2DEG) appearing at an interface between the Al x Ga 1-x N layer (where 0 ⁇ x ⁇ 1) and the GaN layer, which are sequentially formed on a semi-insulating substrate by epitaxial growth, is used is being developed as a high-output device or a high-frequency device.
- 2DEG 2-Dimensional Electron Gas
- HFET in addition to supply of electrons from a carrier supply layer (N-type AlGaN Schottky layer), charges are supplied by a polarization effect caused by spontaneous polarization and piezoelectric polarization, and therefore electron density of the HFET exceeds 10 13 cm ⁇ 2 , and is about an order of magnitude greater than an AlGaAs/GaAs HFET.
- the HFET in which the group III-V nitride semiconductor is used is expected to have drain current density higher than that of the GaAs HFET, and it is reported that an HFET element has a maximum drain current exceeding 1 A/mm. Because the group III-V nitride semiconductor has the wide band gap (for example, GaN has a band gap of 3.4 eV), the group III-V nitride semiconductor exhibits a high withstand voltage characteristic, and the HFET in which the group III-V nitride semiconductor is used can achieve gate-drain electrode withstand voltages of 100 V or more.
- the HFET can be expected to have the electric characteristic exhibiting the high withstand voltage and high current density
- electronic devices typified by the HFET in which the group III-V nitride semiconductor is used are studied to be applied as a high-frequency element and an element that deals with large power with a design size smaller than ever before.
- a matching circuit of a high-frequency transistor for example, see PTL 1
- a high-frequency amplifier circuit including a high-pass circuit for example, see PTL 2
- An object of the present invention is to provide a semiconductor device operable with high output and high gain.
- a semiconductor device includes a semiconductor element, a dielectric substrate adjacent to the semiconductor element, and first wiring and second wiring that connect the semiconductor element and the dielectric substrate.
- the dielectric substrate includes a first metal layer and a second metal layer formed on a surface of the dielectric substrate and a ground metal layer formed on a back side of the dielectric substrate, and the semiconductor element includes an active element and an output terminal that is connected to an output end of the active element.
- the first metal layer is formed at a position closer to the output terminal of the semiconductor element than the second metal layer, the first metal layer and the ground metal layer form a first capacitative element, and the second metal layer and the ground metal layer form a second capacitative element.
- the output terminal is electrically connected to the first metal layer through the first wiring, and electrically connected to the second metal layer through the second wiring.
- the first wiring and the first capacitative element constitute a high-pass matching circuit that passes a signal of an operating frequency or more.
- the first wiring and the first capacitative element constitute the high-pass matching circuit to decrease a difference between impedance during a large output operation and impedance during a small output operation in the semiconductor device. Therefore, the decrease in linear gain can be suppressed during large signal matching. That is, the high-output, high-gain semiconductor device can be made.
- the semiconductor element may further include a first electrode and a third capacitative element that includes a grounded second electrode
- the semiconductor device may further include third wiring that connects the output terminal of the semiconductor element and the first electrode of the capacitative element through the first wiring
- the high-pass matching circuit may further include the third wiring and the third capacitative element.
- the high-pass matching circuit further includes the third wiring and the third capacitative element, so that the high-pass matching circuit having a desired characteristic can be designed without constraint on a thickness of the dielectric substrate and a wiring length of the first wiring.
- the high-pass matching circuit can be formed while the degree of design freedom of the semiconductor device is enhanced, and therefore the decrease in linear gain can be suppressed during the large signal matching.
- the semiconductor element may further include a third capacitative element that includes a first electrode and a second electrode, a diode, and an application terminal that applies a bias voltage to one of an anode and a cathode of the diode, the one of the anode and the cathode of the diode may electrically be connected to the second electrode, the other of the anode and the cathode of the diode may be grounded, and the first electrode may electrically be connected to the first wiring.
- a third capacitative element that includes a first electrode and a second electrode, a diode, and an application terminal that applies a bias voltage to one of an anode and a cathode of the diode, the one of the anode and the cathode of the diode may electrically be connected to the second electrode, the other of the anode and the cathode of the diode may be grounded, and the first electrode may electrically be connected to the first wiring.
- Spread of a depletion layer generated in the diode can be adjusted by adjusting the bias voltage of the diode, and therefore a capacitance of the diode can be adjusted.
- the bias voltage is properly adjusted according to the operating frequency, which allows the characteristic of the high-pass matching circuit to be properly adjusted according to the operating frequency.
- the application terminal may be a bias applying pad that is of a metal electrode formed in the semiconductor element.
- the semiconductor device may further include a detector circuit that detects output power of the semiconductor element and a bias voltage generator that generates the bias voltage based on a detection result of the detector circuit to apply the bias voltage to the terminal.
- the semiconductor device can be operated at a good-linearity output level at which back-off is performed from a saturated output point. Because a back-off level can be set by a bias voltage generator at any value, a low-distortion characteristic can be obtained in any modulation system by properly setting the back-off level according to a digital modulation system.
- the semiconductor device may further include a detector circuit that detects input power of the semiconductor element and a bias voltage generator that generates the bias voltage based on a detection result of the detector circuit to apply the bias voltage to the terminal.
- a semiconductor device in accordance with another aspect of the present invention, includes an active element formed on a substrate, a capacitative element formed on the substrate and provided adjacent to the active element, and stub wiring that is formed on the substrate and electrically connecting a first electrode of the capacitative element and an output terminal of the active element.
- the second electrode of the capacitative element is grounded, and the stub wiring and the capacitative element form a high-pass matching circuit that passes a signal of an operating frequency or more.
- the stub wiring and the capacitative element constitute the high-pass matching circuit to decrease the difference between the impedance during the large output operation and the impedance during the small output operation in the semiconductor device. Therefore, the decrease in linear gain can be suppressed during large signal matching. That is, the high-output, high-gain semiconductor device can be made.
- the active element may be made of a group-III nitride semiconductor.
- the semiconductor device operable with high output and high gain can be made for the high-frequency use.
- FIG. 1A is a plan view illustrating a configuration of a semiconductor device according to a first exemplary embodiment.
- FIG. 1B is a sectional view illustrating the configuration of the semiconductor device.
- FIG. 2 is a partially enlarged view of FIG. 1A .
- FIG. 3 is an equivalent circuit diagram of the semiconductor device of the first exemplary embodiment.
- FIG. 4 is a Smith chart illustrating a difference in characteristic between the semiconductor device of the first exemplary embodiment and a semiconductor device of a comparative example.
- FIG. 5A is a graph illustrating frequency characteristics of return losses during 50-ohm matching in the semiconductor device and the comparative example.
- FIG. 5B is a graph illustrating frequency dependence of a loss in the semiconductor device and the comparative example.
- FIG. 6A is a plan view illustrating a configuration of a semiconductor device according to a first modification of the first exemplary embodiment.
- FIG. 6B is a plan view illustrating another configuration of the semiconductor device of the first modification.
- FIG. 6C is a plan view illustrating still another configuration of the semiconductor device of the first modification.
- FIG. 7A is a plan view illustrating a configuration of a semiconductor device according to a second modification of the first exemplary embodiment.
- FIG. 7B is an equivalent circuit diagram of the semiconductor device of the second modification.
- FIG. 8A is a plan view illustrating a configuration of a semiconductor device according to a third modification of the first exemplary embodiment.
- FIG. 8B is an equivalent circuit diagram of the semiconductor device the third modification.
- FIG. 9 is a plan view illustrating a configuration of a semiconductor device according to a second exemplary embodiment.
- FIG. 10 is a partially enlarged view of FIG. 9 .
- FIG. 11 is an equivalent circuit diagram of the semiconductor device of the second exemplary embodiment.
- FIG. 12 is a Smith chart illustrating a difference in characteristic according to Example 2-1 between the semiconductor device of the second exemplary embodiment and a semiconductor device of a comparative example.
- FIG. 13 is a Smith chart illustrating a difference in characteristic according to Example 2-2 between the semiconductor device of the second exemplary embodiment and the semiconductor device of the comparative example.
- FIG. 14 is a plan view illustrating a configuration of a semiconductor device according to a third exemplary embodiment.
- FIG. 15 is an equivalent circuit diagram of the semiconductor device of the third exemplary embodiment.
- FIG. 16 is a Smith chart illustrating output-impedance frequency characteristics of the semiconductor device of the third exemplary embodiment and a semiconductor device of a comparative example.
- FIG. 17A is a graph illustrating a capacity-voltage characteristic of a diode.
- FIG. 17B is a graph illustrating a difference in frequency characteristic of a loss between the semiconductor device of the third exemplary embodiment and a semiconductor device of a comparative example.
- FIG. 18 is a plan view illustrating a configuration of a semiconductor device according to a modification of the third exemplary embodiment.
- FIG. 19 is an equivalent circuit diagram of the semiconductor device of the modification.
- FIG. 20A is a Smith chart illustrating output-impedance frequency characteristics of the semiconductor device of the modification and a semiconductor device of a comparative example.
- FIG. 20B is a graph illustrating a difference in frequency characteristic of a loss between the semiconductor device of the modification and a semiconductor device of a comparative example.
- FIG. 21 is a circuit diagram illustrating a configuration of a semiconductor device according to a fourth exemplary embodiment.
- FIG. 22 is a circuit diagram illustrating a configuration of a semiconductor device according to a modification of the fourth exemplary embodiment.
- FIG. 23 is a Smith chart illustrating output impedance at which output power of a transistor is maximized during a large signal operation and a small signal operation.
- FIG. 24 is a graph illustrating a power input/output characteristic during small signal matching and large signal matching.
- FIG. 25 is a simplified equivalent circuit diagram of the transistor.
- FIG. 26 is an equivalent circuit diagram illustrating the transistor and an internal matching circuit.
- FIG. 27 is a circuit diagram illustrating a matching circuit of the transistor described in PTL 1.
- FIG. 28A is a plan view illustrating an exemplary configuration of the high-pass circuit described in PTL 2.
- FIG. 28B is a plan view illustrating another exemplary configuration of the high-pass circuit.
- a general semiconductor device, particularly a high-frequency semiconductor device used in a power amplifier will be described in advance of the description of the semiconductor device according to an exemplary embodiment.
- output impedance during a large signal operation decreases compared with output impedance during a small signal operation. That is, the output impedance during large output matching decreases compared with the output impedance during small output matching.
- the decrease in output impedance will be described below.
- FIG. 23 is a Smith chart illustrating the output impedance (optimum Zout) at which output power of the transistor is maximized during the large signal operation and the small signal operation.
- optimum Zout shifts to low impedance of the range from a half to one thirds in terms of actual resistance component. Therefore, during the large output matching, the linear gain decreases largely from an original device performance gain.
- the large signal operation and the small signal operation are referred to as a large signal and a small signal, respectively.
- FIG. 24 is a graph illustrating a power input/output characteristic when input/output matching is performed during the small signal matching and the large signal matching.
- FIG. 25 is a simplified equivalent circuit diagram of the transistor.
- An input side is expressed by a series circuit of a gate-source capacitance (Cgs) and an input resistance (Rin), and an output side is expressed by a parallel circuit of a drain-source resistance (Rds) and a drain-source capacitance (Cds).
- the impedance shift can be suppressed to the minimum during the large signal operation when the increase in Cds is canceled. That is, the decrease in linear gain can also be suppressed.
- the input/output impedance tends to decrease at a high frequency.
- the high-frequency input/output impedance is in the range from 2 ⁇ to 3 ⁇ or less as an actual resistance value. Because the usual impedance is 50 ⁇ in a high-frequency block of a set such as a communication device, it is necessary to match an input/output terminal of the high-output power amplifier to 50 ⁇ .
- an internal matching circuit substrate is mounted as a pre-matching circuit in a neighborhood of the input/output side of the transistor.
- FIG. 26 is a lumped-constant equivalent circuit diagram of the internal matching circuit substrates.
- a low-pass circuit configuration constructed with a series inductance (L) and a parallel capacitance (C) is generally used in the input/output internal matching.
- the transistor and the internal matching substrate are generally connected to each other using a gold wire, and becomes a series L component.
- the transistor and the internal matching circuit substrate are mounted in a package made of an insulating material such as ceramic, and the package includes an input/output lead terminal.
- FIG. 27 illustrates the matching circuit having the above form in FIG. 1 of PTL 1.
- Circuit 802 that performs the matching between field effect transistor (FET) 801 and a load is a low-pass circuit constructed with a series inductance (L) and a parallel capacitance (C).
- the application of the high-pass circuit configuration constructed with the parallel circuit of the series inductance (L) and the series capacitance (C) is potentially capable of canceling the increase in Cds to suppress the impedance shift during the large signal operation to the minimum.
- FIG. 28A is a plan view illustrating an exemplary configuration of the high-pass circuit described in PTL 2.
- one pad 906 in which a capacitor is formed is provided on dielectric chip 908 provided between transistor chip 901 and output strip line 910 .
- An inductance value of metal wire 904 and a capacitance value of pad 906 are set such that series resonance is generated at a frequency double an operating frequency of transistor chip 901 .
- the inductance element is connected to a ground potential to pass a DC current. Therefore, the capacitor constituted of pad 906 is loaded in series with the inductance element.
- the connection of the element to the ground potential means that one end of the element is electrically connected to the ground electrode.
- a reactance component is expressed by (equation 1) with respect to a sum of inductance of an inductance component caused by metal wire 904 and a capacitance component caused by pad 906 .
- a positive reactance component X constitutes an inductive impedance
- a negative reactance component X constitutes a capacitive impedance.
- the reactance component X be the inductive impedance, namely, X>0.
- Equation 1 an inductance component XL is expressed by (equation 2) in terms of impedance, and a capacitance component XC is expressed by (equation 3) in terms of impedance.
- XL j (2 ⁇ f ) L (Equation 2)
- XC 1/( j (2 ⁇ f ) C ) (Equation 3)
- j is an imaginary unit
- f is a frequency
- L is an inductance value of metal wire 904 and indicates a capacitance value caused by pad 906 .
- the inductance and capacitance values are fixed such that the series resonance is generated at the frequency double the operating frequency, namely, such that X becomes 0.
- fixing the inductance and capacitance values correspond to fixing the length of metal wire 904 and fixing the area of pad 906 , respectively.
- LC series resonance is generated at a frequency double a fundamental wave in order to suppress a second harmonic of the fundamental wave.
- FIG. 28B is a plan view illustrating another exemplary configuration of the high-pass circuit of PTL 2.
- pads 906 and 907 are arranged in two rows on dielectric chip 908 provided between transistor chip 901 and output strip line 910 .
- pad 906 constitutes the capacitor, and is provided in series with the inductance element constructed with metal wire 904 .
- the optimum output impedance still shifts to the low impedance of the range from a half to one thirds in terms of actual resistance component during the large signal operation, and the linear gain still decreases largely from the original device performance gain during the large output matching.
- the LC series resonance is generated at a frequency double the fundamental wave in order to suppress the second harmonic of the operating frequency. Therefore, because X ⁇ 0 holds in (equation 1) at the operating frequency, not the inductive impedance but the capacitive impedance is obtained, and the low-pass circuit to which the parallel capacitance is connected is made from the viewpoint of equivalent circuit. As a result, L necessary for impedance conversion decreases relative to the value of C, and a desired phase rotation amount of the reactance component X is lacked to generate an impedance mismatch.
- the bonding wire and microstrip line which contribute to the inductance component, are lengthened.
- a loss of the high-frequency signal increases due to resistance components of the bonding wire and microstrip line, which is obstructive to the high output and the high gain.
- the high-output, high-gain power amplifier is hardly made for the high-frequency use.
- Each of the following exemplary embodiments illustrates a comprehensive or specific example.
- a numerical value, a shape, a material, a component, and an arrangement and a connection mode of components in the following exemplary embodiments are only by way of example, but do not restrict the present invention.
- components that are not described in an independent claim indicating the highest concept are described as optional components.
- FIG. 1A is a plan view illustrating a configuration of a semiconductor device according to a first exemplary embodiment
- FIG. 1B is a sectional view of the semiconductor device.
- FIG. 2 is an enlarged view of region 150 indicated by a broken-line in FIG. 1A .
- Semiconductor chip 101 that is of a semiconductor element for high-frequency use constitutes a gallium nitride (GaN) Hetero-junction Field Effect Transistor (HFET) (not illustrated) formed on a silicon substrate (not illustrated).
- GaN gallium nitride
- HFET Hetero-junction Field Effect Transistor
- the gallium nitride hetero-junction field effect transistor is abbreviated to a GaN HFET.
- the silicon substrate has a high specific resistance, and the silicon substrate having a specific resistance of 1 ⁇ cm or more is used.
- the silicon substrate has a thickness of 100 ⁇ m.
- Semiconductor chip 101 is not limited to the semiconductor element in which the GaN HFET is used.
- a gallium arsenide (GaAs) MESFET, a PHEMT, a Hetero-junction Bipolar Transistor (HBT), a Si MOSFET, a bipolar transistor, an HBT, and a InP transistor can be applied as semiconductor chip 101 .
- gate pad 102 , source pad 103 , drain pad 104 are formed on semiconductor chip 101 by externally extracting a gate electrode, a source electrode, and a drain electrode in an intrinsic region of the GaN HFET.
- the GaN HFET has a total gate width of 48 mm, a unit finger length of 400 ⁇ m, and a unit finger interval of 50 ⁇ m.
- a ground electrode (not illustrated) having the ground potential is provided on a back side of semiconductor chip 101 , namely, in an opposite surface to a surface of semiconductor chip 101 in which the GaN HFET is formed, and source pad 103 is electrically connected to the ground electrode on the back side of semiconductor chip 101 .
- the electric connection of source pad 103 to the ground electrode can be performed by wire bonding, or a through-hole is made in a silicon substrate of semiconductor chip 101 and a via hole is made by metalizing an inside of the through-hole to be able to perform the electric connection of source pad 103 to the ground electrode.
- the length in a longitudinal direction is 6.3 mm, and the length in a direction orthogonal to the longitudinal direction is 1.0 mm.
- the GaN HFET is operated with a saturated output of about 100 W at a frequency of 2.15 GHz, a drain voltage of 30 V, and an idling current (high-frequency power is not input yet) of 0.8 A.
- Dielectric substrate 108 is alumina having a dielectric constant of 10, and dielectric substrate 108 has a thickness of 0.5 mm and a width substantially equal to the size of semiconductor chip 101 . That is, the length of semiconductor chip 101 is substantially equal to the length of dielectric substrate 108 in the longitudinal direction of semiconductor chip 101 .
- Wiring patterns 109 and 110 are formed on dielectric substrate 108 by gold plating for example.
- a ground electrode (not illustrated) having the ground potential is formed over a whole back side of dielectric substrate 108 .
- a material having a dielectric constant of 93 or 38 can be applied as dielectric substrate 108 .
- the thickness is selected according to the dielectric constant of the applied material.
- Dielectric substrate 108 is made of barium titanate (BaTiO 3 ) dielectric oxide, strontium zirconate (SrZrO 3 ) dielectric oxide, or a dielectric oxide in which a composition ratio thereof is changed.
- BaTiO 3 barium titanate
- SrZrO 3 strontium zirconate
- a balance among the dielectric constant, a distortion factor, and a capacitance-temperature characteristic is considered as a material characteristic.
- MIM (Metal-Insulator-Metal) capacitor 111 is formed on semiconductor chip 101 .
- Capacitor 111 is formed on a drain electrode side when viewed from the gate electrode of the GaN HFET.
- Capacitor 111 has a configuration in which a dielectric layer is laminated on a silicon substrate between an upper-layer electrode (not illustrated) and a lower-layer electrode (not illustrated).
- Ti/Au titanium evaporation/gold plating
- Ti/Al/Ti titanium evaporation/gold plating
- silicon nitride (SiN) or a high dielectric constant material such as strontium titanate (SrTiO 3 ) is used as the dielectric layer.
- the size of capacitor 111 is such that the upper-layer electrode has a length of 6 mm in the longitudinal direction and a length of 0.15 mm in the direction orthogonal to the longitudinal direction and, in the case that silicon nitride (SiN) is used as the dielectric layer of capacitor 111 , has a thickness of 150 nm.
- SiN silicon nitride
- One of the upper-layer electrode and the lower-layer electrode is electrically connected to the ground electrode on the back side of semiconductor chip 101 .
- the through-hole is made in the silicon substrate of semiconductor chip 101 and the inside of the through-hole is metalized to be able to perform the electric connection of capacitor 111 to the ground electrode.
- the through-hole is arranged between adjacent units that are obtained by dividing the MIM capacitor in the longitudinal direction of capacitor 111 , as a method for electrically connecting capacitor 111 to the ground electrode.
- the through-holes are arranged at both ends in the longitudinal direction of capacitor 111 , because the distance from the central portion of the MIM capacitor to the through-holes arranged at both the ends is large, a parasitic inductance corresponding to the length from the central portion to the through-hole possibly decreases the function of the capacitor.
- the arrangement of the through-hole between the adjacent units that are obtained by dividing the MIM capacitor can decrease the parasitic inductance and reduce the degradation of the function of the capacitor.
- Semiconductor chip 101 and dielectric substrate 108 are arranged such that capacitor 111 and wiring pattern 110 face to each other.
- capacitor 111 of semiconductor chip 101 is arranged so as to be located on the side of dielectric substrate 108
- wiring pattern 110 of dielectric substrate 108 is arranged closer to semiconductor chip 101 than wiring pattern 109 .
- a distance between a side of semiconductor chip 101 and a side of dielectric substrate 108 , the sides facing each other, is about 400 ⁇ m.
- Drain pad 104 of semiconductor chip 101 and wiring pattern 109 of dielectric substrate 108 are electrically connected to each other by bonding wire 112
- drain pad 104 of semiconductor chip 101 and wiring pattern 110 of dielectric substrate 108 are electrically connected to each other by bonding wire 113 .
- the length in the longitudinal direction is 6 mm, and the length in the direction orthogonal to the longitudinal direction is 0.3 mm.
- FIG. 2 is the enlarged view of region 150 indicated by the broken-line in FIG. 1A , and some of the plurality of bonding wires 112 to 114 are omitted in FIG. 2 .
- two wires as each of bonding wires 112 , 113 , and 114 are arranged, and other wires are omitted.
- the plurality of bonding wires 112 to 114 are uniformly arranged in the longitudinal direction of drain pad 104 .
- semiconductor chip 101 and dielectric substrate 108 are connected to each other by 13 bonding wires 112 , 113 , and 114 along the longitudinal directions of semiconductor chip 101 and dielectric substrate 108 .
- capacitor 111 and dielectric substrate 108 are arranged on the drain side of semiconductor chip 101 .
- capacitor 111 and dielectric substrate 108 may be arranged on the gate side of semiconductor chip 101 .
- semiconductor device 100 of the first exemplary embodiment includes semiconductor chip 101 , dielectric substrate 108 that is arranged adjacent to semiconductor chip 101 , and bonding wire 113 and bonding wire 112 that connect semiconductor chip 101 and dielectric substrate 108 .
- Dielectric substrate 108 includes wiring pattern 110 and wiring pattern 109 that are formed on the surface and the ground electrode that is formed on the back side.
- Semiconductor chip 101 includes the GaN HFET and drain pad 104 that is connected to the drain of the GaN HFET.
- Wiring pattern 110 is formed at a position closer to drain pad 104 of semiconductor chip 101 than wiring pattern 109 .
- Drain pad 104 is electrically connected to wiring pattern 110 through bonding wire 113 , and electrically connected to wiring pattern 109 through bonding wire 112 .
- Semiconductor chip 101 further includes capacitor 111 including the upper-layer electrode and the lower-layer electrode in which one of the upper-layer electrode and the lower-layer electrode is grounded.
- Semiconductor device 100 further includes bonding wire 114 that connects drain pad 104 of semiconductor chip 101 and one of the upper-layer electrode and the lower-layer electrode of capacitor 111 through bonding wire 113 .
- Semiconductor chip 101 , drain pad 104 , bonding wire 113 , bonding wire 112 , bonding wire 114 , wiring pattern 109 , wiring pattern 110 , and capacitor 111 correspond to the semiconductor element, the output terminal of the semiconductor element, the first wiring, the second wiring, the third wiring, the second metal layer, the first metal layer, and the third capacitative element, respectively.
- the ground electrode having the ground potential, which is formed on the back side of dielectric substrate 108 corresponds to the ground metal layer.
- FIG. 3 A configuration of semiconductor device 100 of the first exemplary embodiment will be described below with reference to an equivalent circuit diagram in FIG. 3 .
- the output matching circuit of semiconductor chip 101 is connected as follows.
- the GaN HFET includes gate terminal 105 , source terminal 106 , and drain terminal 107 .
- Series inductor L 1 constituted of bonding wire 112 and parallel capacitor C 1 constituted of wiring pattern 109 are connected to drain terminal 107
- a series circuit of inductor L 2 constituted of bonding wire 113 and capacitor C 2 constituted of wiring pattern 110 is connected to drain terminal 107 .
- capacitors C 1 and C 2 are ground capacitances formed between wiring patterns 109 and 110 and the ground electrode on the back side connected to the ground potential.
- inductor L 3 constituted of bonding wire 114 and capacitor C 3 is connected to a connection point of inductor L 2 and capacitor C 2 .
- Capacitor C 3 corresponds to capacitor 111 in FIG. 2 .
- the configuration surrounded by the broken line is the equivalent circuit portion of the configuration that is formed on dielectric substrate 108 .
- Bonding wire 114 is provided from wiring pattern 110 formed on dielectric substrate 108 for the internal matching circuit to semiconductor chip 101 .
- the circuit constructed with inductor L 2 and capacitor C 2 and the circuit constructed with inductor L 3 and capacitor C 3 are added to LC low-pass circuit, which is constructed with series inductor L 1 and parallel capacitor C 1 , so as to act as LC high-pass matching circuit 116 .
- capacitor C 2 is constructed with wiring pattern 110 and the ground electrode
- capacitor C 1 is constructed with wiring pattern 109 and the ground electrode
- LC high-pass matching circuit 116 that passes the signal having the operating frequency or more is constructed with inductor L 2 constituted of bonding wire 113 and capacitor C 2
- LC high-pass matching circuit 116 further includes inductor L 3 constituted of bonding wire 114 and capacitor C 3 .
- Capacitor C 1 constructed with wiring pattern 109 and the ground electrode corresponds to the second capacitative element
- capacitor C 2 constructed with wiring pattern 110 and the ground electrode corresponds to the first capacitative element
- LC high-pass matching circuit 116 corresponds to the high-pass matching circuit.
- the inductance and capacitance enough to satisfy X>0 of (equation 1) can be obtained by adding LC high-pass matching circuit 116 constructed with inductor L 2 , capacitor C 2 , inductor L 3 , and capacitor C 3 to drain terminal 107 that is the output terminal of semiconductor chip 101 .
- the inductance and the capacitance are adjusted by adjusting a wire length of bonding wire 113 and a pattern size of capacitor 111 .
- LC high-pass matching circuit 116 has inductor L 2 of 135 pH, capacitor C 2 of 0.88 pF, inductor L 3 of 110 pH, and capacitor C 3 of 360 pF. These values are equivalent values of a total of bonding wires 112 , 113 , and 114 in semiconductor device 100 .
- a characteristic of semiconductor device 100 of the first exemplary embodiment will be described below using a comparative example. Specifically, a difference in characteristic between semiconductor device 100 of the first exemplary embodiment including LC high-pass matching circuit 116 and a semiconductor device of the comparative example that does not include LC high-pass matching circuit 116 will be described below.
- FIG. 4 is a Smith chart illustrating the impedance during the small signal and the impedance during the large signal in semiconductor device 100 of the first exemplary embodiment and the semiconductor device of the comparative example.
- FIG. 4 illustrates mismatch degrees of the impedance during the small signal and the impedance during the large signal in the semiconductor device of the comparative example and semiconductor device 100 of the first exemplary embodiment.
- a return loss (rl) is used as an index expressing the mismatch degree of the impedance (impedance difference).
- the mismatch degree increases with decreasing return loss.
- the output impedance during the small signal of the semiconductor device of the comparative example is 1.5 ⁇ j ⁇ 2.0 ( ⁇ ), and the output impedance during the large signal is 0.6 ⁇ j ⁇ 1.0 ( ⁇ ).
- the output impedance during the small signal of semiconductor device 100 of the first exemplary embodiment is 4.1+j ⁇ 0.1 ( ⁇ ), and the output impedance during the large signal is 2.2 ⁇ j ⁇ 0.4 ( ⁇ ).
- the semiconductor device of the comparative example has a return loss of 8.7 dB
- semiconductor device 100 of the first exemplary embodiment has a return loss of 10.1 dB.
- semiconductor device 100 of the first exemplary embodiment is smaller than the semiconductor device of the comparative example in the difference between the impedance during the large output operation and the impedance during the small output operation of the device and the mismatch degree.
- the small difference between the impedance during the large output operation and the impedance during the small output operation of the device means that the linear gain is hardly decreased during the large signal matching. Therefore, in semiconductor device 100 of the first exemplary embodiment, the decrease in linear gain during large signal matching can be suppressed by applying LC high-pass matching circuit 116 .
- FIGS. 5A and 5B illustrate differences in return loss and loss characteristic during the 50-ohm matching between semiconductor device 100 of the first exemplary embodiment and the semiconductor device of the comparative example.
- FIG. 5A is a graph illustrating frequency characteristics of the return losses during 50-ohm matching in semiconductor device 100 of the first exemplary embodiment and the semiconductor device of the comparative example
- FIG. 5B is a graph illustrating the loss characteristics in semiconductor device 100 of the first exemplary embodiment and the semiconductor device of the comparative example.
- semiconductor device 100 of the first exemplary embodiment is better than the semiconductor device of the comparative example over the wideband in both the return loss and the loss characteristic during the 50-ohm matching.
- the wideband can be achieved in terms of the matching and the loss characteristic compared with the semiconductor device of the comparative example that does not include LC high-pass matching circuit 116 .
- semiconductor device 100 of the first exemplary embodiment includes semiconductor chip 101 , dielectric substrate 108 that is arranged adjacent to semiconductor chip 101 , and bonding wire 113 and bonding wire 112 that connect semiconductor chip 101 and dielectric substrate 108 .
- Dielectric substrate 108 includes wiring pattern 110 and wiring pattern 109 that are formed on the surface and the ground electrode that is formed on the back side.
- Semiconductor chip 101 includes the GaN HFET and drain pad 104 that is connected to the drain of the GaN HFET.
- Wiring pattern 110 is formed at the position closer to drain pad 104 of semiconductor chip 101 than wiring pattern 109 , wiring pattern 110 and the ground electrode constitute capacitor C 2 , and wiring pattern 109 and the ground electrode constitute capacitor C 1 .
- Drain pad 104 is electrically connected to wiring pattern 110 through bonding wire 113 , and electrically connected to wiring pattern 109 through bonding wire 112 .
- LC high-pass matching circuit 116 that passes the signal having the operating frequency or more is constructed with inductor L 2 constituted of bonding wire 113 and capacitor C 2 .
- the operating frequency means a frequency at which semiconductor device 100 is operated.
- the difference between the impedance during the large output operation and the impedance during the small output operation can be decreased to suppress the decrease in linear gain during the large signal matching.
- semiconductor device 100 of the first exemplary embodiment can obtain the high output and the high gain for the high-frequency use.
- wiring patterns 109 and 110 are not limited to the above shapes. Alternatively, for example, wiring patterns 109 and 110 may have shapes of a first modification.
- FIGS. 6A to 6C illustrate the first modification of wiring patterns 109 and 110 on dielectric substrate 108 in FIG. 2 in the first exemplary embodiment.
- wiring pattern 110 can be divided to provide wiring pattern 1101 according to a set of bonding wires 112 , 113 , and 114 formed on drain pad 104 .
- protrusion 1091 of wiring pattern 109 can be formed in a space between wiring pattern 110 and wiring pattern 1101 , and bonding wire 112 can be connected to protrusion 1091 .
- bent wiring pattern 110 can be formed in an end portion of dielectric substrate 108 .
- the semiconductor device of the first modification including any of the wiring patterns in FIGS. 6A to 6C
- the LC high-pass matching circuit that generates the parallel resonance at the operating frequency is added to Cds of semiconductor chip 101 , Cds is decreased to improve the high-frequency characteristic.
- a semiconductor device differs from semiconductor device 100 of the first exemplary embodiment in that an element constituting inductor L 2 is constructed with the wiring pattern formed on semiconductor chip 101 and the bonding wire connecting semiconductor chip 101 and dielectric substrate 108 in the equivalent circuit of the semiconductor device, and that the semiconductor device of the second modification does not include capacitor 111 and bonding wire 114 connecting wiring pattern 110 and capacitor 111 .
- FIG. 7A is a plan view illustrating a configuration of the semiconductor device of the second modification
- FIG. 7B is an equivalent circuit diagram of the semiconductor device of the second modification.
- FIGS. 7A and 7B A difference between the configuration in FIGS. 7A and 7B and the configuration in FIGS. 1A to 3 will be described below.
- drain pad 104 and wiring pattern 501 of semiconductor chip 101 are electrically connected to each other, wiring pattern 501 and wiring pattern 109 are electrically connected to each other by bonding wire 503 , and drain pad 104 and wiring pattern 109 are electrically connected to each other by bonding wire 502 .
- Wiring patterns 501 , bonding wires 502 , and bonding wires 503 are symmetrically arranged with respect to the central portion in the longitudinal direction of semiconductor chip 101 .
- bonding wires 502 although other bonding wires in the longitudinal direction are omitted in FIG. 7A , actually the bonding wires are uniformly arranged in the longitudinal direction of drain pad 104 .
- the inductance component caused by wiring pattern 501 is included in inductor L 2 constituted of bonding wire 503 in FIG. 3 .
- capacitor C 2 constituted of wiring pattern 109 is formed, and LC high-pass matching circuit 116 is constructed with inductor L 2 and capacitor C 2 .
- a semiconductor device according to a third modification of the first exemplary embodiment is substantially identical to the semiconductor device of the second modification, and the semiconductor device of the third modification differs from the semiconductor device of the second modification in that the semiconductor device of the third modification includes a capacitor between adjacent wiring patterns 501 and a bonding wire connecting wiring pattern 110 and the capacitor.
- FIG. 8A is a plan view illustrating a configuration of the semiconductor device of the third modification
- FIG. 8B is an equivalent circuit diagram of the semiconductor device of the third modification.
- drain pad 104 and wiring pattern 501 of semiconductor chip 101 are electrically connected to each other
- wiring pattern 501 and wiring pattern 110 are electrically connected to each other by bonding wire 503
- drain pad 104 and wiring pattern 109 are electrically connected to each other by bonding wire 502
- wiring pattern 110 and capacitor 505 formed on semiconductor chip 101 are electrically connected to each other by bonding wire 504 .
- Wiring patterns 501 , bonding wires 502 , bonding wires 503 , and bonding wires 504 are symmetrically arranged with respect to a central portion in the longitudinal direction of semiconductor chip 101 .
- bonding wires 502 although other bonding wires in the longitudinal direction are omitted in FIG.
- Capacitor 505 is prepared while having the configuration similar to that of capacitor 111 . Compared with wiring pattern 110 in FIG. 7A , wiring pattern 110 is divided at the central portion. Capacitor 505 may also symmetrically be divided at the central portion in the longitudinal direction.
- bonding wire 504 corresponds to inductor L 3
- capacitor 505 corresponds to capacitor C 3
- the LC high-pass matching circuit is formed by inductor L 2 , capacitor C 2 , inductor L 3 , and capacitor C 3 .
- the semiconductor device of the third modification similarly to semiconductor device 100 of the first exemplary embodiment, because the LC high-pass matching circuit that generates the parallel resonance at the operating frequency is added to Cds of semiconductor chip 101 , Cds is decreased to improve the high-frequency characteristic.
- semiconductor device 100 of the first exemplary embodiment and semiconductor devices of the first to third modifications when the wire length and the wiring pattern size are fixed such that the inductance and the capacitance are similarly obtained with respect to the gate-source capacitance of semiconductor chip 101 , the inductance and the capacitance generate the parallel resonance at the operating frequency. As a result, Cgs is decreased to improve the high-frequency characteristic. That is, the LC high-pass matching circuit may be provided on the input side of semiconductor chip 101 .
- the LC high-pass matching circuit is configured with inductor L 2 and capacitor C 2 ( FIG. 8A ), or the LC high-pass matching circuit is constructed with inductors L 2 and L 3 and capacitors C 2 and C 3 ( FIG. 1A and others).
- the characteristic impedance of the wiring on dielectric substrate 108 is set to the desired value or more. For this reason, the thickness of dielectric substrate 108 is increased greater than or equal to a desired thickness.
- the capacitance value of capacitor C 2 is decreased with increasing thickness of dielectric substrate 108 .
- X ⁇ 0 is obtained in (equation 1), and in some cases the impedance is not inductive but capacitive.
- the low-pass circuit in which the parallel capacitor is connected is obtained from the viewpoint of equivalent circuit.
- bonding wire 113 is lengthened to increase inductance component XL of (equation 2).
- inductance component XL of (equation 2).
- bonding wire 113 is excessively lengthened, the lengths of the bonding wire and microstrip line, which cause the inductance component, are lengthened, and the loss of the high-frequency signal increases due to the resistance components of the bonding wire and microstrip line, which is obstructive to the high output and the high gain.
- the LC high-pass matching circuit constructed with inductors L 2 and L 3 and capacitors C 2 and C 3 , the LC high-pass matching circuit having the better characteristic can be obtained because of no constraint on the thickness of dielectric substrate 108 or the length of bonding wire 113 . Therefore, the characteristic of the semiconductor device can further be improved.
- the LC high-pass matching circuit having the higher degree of design freedom can be made in semiconductor device 100 of the first exemplary embodiment including the LC high-pass matching circuit constructed with inductors L 2 and L 3 and capacitors C 2 and C 3 and the semiconductor devices of the first and third modifications of the first exemplary embodiment.
- the decrease in linear gain can be suppressed during large signal matching.
- a semiconductor device differs from semiconductor device 100 of the first exemplary embodiment in that the semiconductor device of the second exemplary embodiment does not include the dielectric substrate and the bonding wire connecting the semiconductor chip and the dielectric substrate. That is, the semiconductor device of the second exemplary embodiment includes a capacitative element that is formed on a semiconductor chip and provided adjacent to the GaN HFET and stub wiring that is formed on the semiconductor chip to electrically connect one of electrodes of the capacitative element and an output terminal of the GaN HFET. The other electrode of the capacitative element is grounded, and the stub wiring and the capacitative element constitute the high-pass matching circuit that passes the signal having the operating frequency or more.
- FIG. 9 is a plan view illustrating a configuration of the semiconductor device of the second exemplary embodiment
- FIG. 10 is an enlarged view of a region indicated by a broken-line in FIG. 9
- FIG. 11 is an equivalent circuit diagram of the semiconductor device of the second exemplary embodiment.
- FIG. 10 illustrates a configuration of the unit cell having a gate width of 450 ⁇ m.
- the bonding wire used in semiconductor device 100 of the first exemplary embodiment it is not preferable to apply the bonding wire used in semiconductor device 100 of the first exemplary embodiment. This is because a wavelength (electrical length) of an electromagnetic wave transmitted on the dielectric substrate is shorter in the quasi-millimeter wave band and the millimeter wave band than in the microwave band. For this reason, in the case that the impedance matching is performed using the bonding wire, it is necessary to shorten the length of the bonding wire as much as possible in order to adjust the phase rotation amount of the impedance caused by the inductance component.
- the LC high-pass matching circuit has a configuration of an MMIC (Monolithic Microwave IC) prepared on the same substrate as the GaN HFET.
- MMIC Monitoring Microwave IC
- semiconductor device 200 of the second exemplary embodiment is configured as follows.
- the GaN HFET of the first exemplary embodiment is formed as an active device on semiconductor chip 201 .
- gate extraction wiring 202 , source pad 203 , and drain extraction wiring 204 are formed by externally extracting the gate, source, and drain electrodes in the intrinsic region of the GaN HFET.
- the GaN HFET has a total gate width of 2.7 mm, a unit finger length of 75 ⁇ m, and a unit finger interval of 30 ⁇ m. In the GaN HFET, the six unit cells having a gate width of 450 ⁇ m are connected in parallel.
- Source pad 203 is electrically connected to a ground electrode on the back side of semiconductor chip 201 .
- the through-hole is made in the silicon substrate of semiconductor chip 201 and the inside of the through-hole is metalized to be able to perform the electric connection of source pad 203 to the ground electrode.
- the length in the longitudinal direction is 2.4 mm, and the length in the direction orthogonal to the longitudinal direction is 0.55 mm.
- the GaN HFET is operated with a saturated output of about 2 W at a frequency of 25 GHz, a drain voltage of 20 V, and an idling current (high-frequency power is not input yet) of 0.5 A.
- the configuration of the LC high-pass matching circuit is applied to the drain side of the GaN HFET on semiconductor chip 201 will be described below.
- the configuration of the LC high-pass matching circuit can also be applied to a gate side of the GaN HFET on semiconductor chip 201 .
- leading-end short-circuit stub-forming stub wiring 205 (also referred to as a short stub-forming stub wiring) is electrically connected while branched in the longitudinal direction of the GaN HFET.
- MIM (Metal-Insulator-Metal) capacitor 206 is formed at a leading end of stub wiring 205 .
- Stub wiring 205 has a wiring width of 25 ⁇ m and a length of 450 ⁇ m.
- MIM capacitor 206 has a configuration in which the dielectric layer is laminated on the silicon substrate between the upper-layer electrode (not illustrated) and the lower-layer electrode (not illustrated).
- Ti/Au titanium evaporation/gold plating
- Ti/Al/Ti is used as the metal material for the lower-layer electrode.
- silicon nitride (SiN) or a high dielectric constant material such as strontium titanate (SrTiO 3 ) is used as the dielectric layer.
- One of the upper-layer electrode and the lower-layer electrode is electrically connected to the ground electrode on the back side of semiconductor chip 201 .
- the through-hole is made in the silicon substrate of semiconductor chip 201 and the inside of the through-hole is metalized to be able to perform the electric connection to the ground electrode.
- capacitor 206 is such that the upper-layer electrode is 130-um-square.
- Silicon nitride (SiN) has a thickness of 150 nm, and capacitor 206 has an intrinsic capacitance value of 6.8 pF.
- the through-hole is made in the silicon substrate of semiconductor chip 201 and a via hole is made by metalizing the inside of the through-hole to be able to perform the electric connection to the ground electrode.
- the electric connection to the ground electrode may be performed by connecting one of the upper-layer electrode and the lower-layer electrode to the source electrode of the GaN HFET.
- the short stub is constructed with a distributed constant line, and a leading-end portion of the line is connected to the ground potential.
- the short stub In order to block the DC current, it is necessary for the short stub to have a form in which the capacitor is loaded in series with the distributed constant line, thereby constituting the LC high-pass matching circuit.
- wiring pattern 207 and open stub 208 are formed on semiconductor chip 201 by gold plating in order to perform the 50-ohm output matching of the power amplifier.
- Wiring pattern 207 is electrically connected in the region where stub wiring 205 is branched from drain extraction wiring 204 .
- FIG. 11 A configuration of semiconductor device 200 of the second exemplary embodiment will be described below with reference to an equivalent circuit diagram in FIG. 11 .
- the output matching circuit of semiconductor chip 201 is connected as follows.
- inductor L 1 constituted of stub wiring 205 and capacitor C 1 is connected to drain terminal 107 .
- capacitor C 1 corresponds to capacitor 206 in FIG. 10 .
- Series inductors L 2 and L 3 constituted of wiring pattern 207 , parallel capacitor C 2 constituted of wiring pattern 207 , and capacitor C 3 constituted of open stub 208 are connected to inductor L 1 .
- the circuit constructed with inductor L 1 and capacitor C 1 is added so as to act as the LC high-pass matching circuit.
- semiconductor device 200 of the second exemplary embodiment similarly to semiconductor device 100 of the first exemplary embodiment, because the LC high-pass matching circuit that generates the parallel resonance at the operating frequency is added to Cds of the GaN HFET on semiconductor chip 201 , Cds is decreased to improve the high-frequency characteristic.
- semiconductor device 200 of the second exemplary embodiment the effect similar to that of semiconductor device 100 of the first exemplary embodiment is obtained in semiconductor device 200 of the second exemplary embodiment.
- the inductance and the capacitance When the wire length and the wiring pattern size are fixed such that the inductance and the capacitance are similarly obtained with respect to the gate-source capacitance, the inductance and the capacitance generate the parallel resonance at the operating frequency, and Cgs is decreased to improve the frequency characteristic.
- semiconductor device 200 of the second exemplary embodiment will be described below using a comparative example. Specifically, a difference in characteristic between semiconductor device 200 of the second exemplary embodiment and a semiconductor device of the comparative example that does not include LC high-pass matching circuit constructed with inductor L 1 and capacitor C 1 will be described below for the case (Example 1) that the stub wiring has a length of 450 ⁇ m and the case (Example 2) that the stub wiring has a length of 250 ⁇ m.
- FIG. 12 is a Smith chart illustrating the impedance during the small signal and the impedance during the large signal in semiconductor device 200 of Example 2-1 in which stub wiring 205 has a length of 450 ⁇ m and the semiconductor device of the comparative example that does not include the high-pass matching circuit.
- FIG. 12 illustrates mismatch degrees of the impedance during the small signal and the impedance during the large signal in the semiconductor device of the comparative example and the semiconductor device of Example 2-1.
- the impedance corresponds to the impedance of the unit cell having a gate width of 450 ⁇ m. That is, the impedance of a total gate width of 2.7 mm corresponds to the value in which the impedance of gate width 450 ⁇ m is parallelized.
- the return losses of the cases (1) and (2) are calculated and compared.
- the output impedance during the small signal of the semiconductor device of the comparative example is 24.8 ⁇ j ⁇ 24.5 ( ⁇ ), and the output impedance during the large signal is 9.9 ⁇ j ⁇ 4.2 ( ⁇ ).
- the output impedance during the small signal of semiconductor device 200 of Example 2-1 is 47.8+j ⁇ 1.3 ( ⁇ ), and the output impedance during the large signal is 28.7 ⁇ j ⁇ 5.6 ( ⁇ ).
- the semiconductor device of the comparative example has a return loss of 9.2 dB
- semiconductor device 200 of Example 2-1 has a return loss of 11.5 dB.
- semiconductor device 200 of Example 2-1 is smaller than the semiconductor device of the comparative example in the difference between the impedance during the large output operation and the impedance during the small output operation of the device and the mismatch degree.
- the small difference between the impedance during the large output operation and the impedance during the small output operation of the device means that the linear gain is hardly decreased during the large signal matching. Therefore, in semiconductor device 200 of Example 2-1, the decrease in linear gain during large signal matching can be suppressed by applying the LC high-pass matching circuit.
- the wideband can be achieved in view of the matching and the loss characteristic.
- FIG. 13 is a Smith chart illustrating the impedance during the small signal and the impedance during the large signal in semiconductor device 200 of Example 2-2 in which stub wiring 205 has a length of 250 ⁇ m and the semiconductor device of the comparative example that does not include the high-pass matching circuit.
- the semiconductor device of the comparative example has a return loss of 9.2 dB
- the semiconductor device of the second exemplary embodiment has a return loss of 12.4 dB.
- semiconductor device 200 of the second exemplary embodiment includes the GaN HFET that is formed on the silicon substrate, capacitor 206 that is formed on the substrate and provided adjacent to the GaN HFET, and stub wiring 205 that is formed on the silicon substrate to electrically connect one of electrodes of capacitor 206 and the output terminal of the GaN HFET.
- the other electrode of capacitor 206 is grounded, and stub wiring 205 and capacitor 206 constitute the LC high-pass matching circuit that passes the signal having the operating frequency or more.
- the silicon substrate, the GaN HFET, and the LC high-pass matching circuit correspond to the substrate, the active element, and the high-pass matching circuit, respectively.
- semiconductor device 200 of the second exemplary embodiment similarly to semiconductor device 100 of the first exemplary embodiment, because the LC high-pass matching circuit that generates the parallel resonance at the operating frequency is added to Cds of the GaN HFET, Cds is decreased to improve the high-frequency characteristic.
- stub wiring 205 is linearly arranged. Alternatively, stub wiring 205 may be bent when being large in length.
- leading-end short-circuit stub-forming stub wiring 205 (short stub-forming stub wiring) is electrically connected to the leading end of drain extraction wiring 204 of semiconductor chip 201 while branched in the longitudinal direction of the GaN HFET.
- stub wiring 205 is not branched with respect to drain extraction wiring 204 , but electrically connected only in one direction. That is, one stub wiring may be connected to the leading end of drain extraction wiring 204 .
- a semiconductor device is substantially identical to semiconductor device 100 of the first exemplary embodiment, and the semiconductor device of the third exemplary embodiment differs from semiconductor device 100 of the first exemplary embodiment in that the semiconductor device of the third exemplary embodiment includes a diode and an application terminal used to apply the bias voltage to one of the anode and cathode of the diode, and that one of the anode and cathode of the diode is electrically connected to one of electrodes of capacitor 111 while the other of the anode and cathode of the diode is grounded.
- FIG. 14 is a plan view illustrating a configuration of the semiconductor device according to the third exemplary embodiment
- FIG. 15 is an equivalent circuit diagram of the semiconductor device of the third exemplary embodiment.
- the wideband and multiband are achieved in order to deal with high-speed, large-capacity communication. Therefore, in a transmission power amplifier used in the mobile communication device, there is a need for the operation in the wideband.
- diode 115 is added to the circuit of semiconductor device 100 of the first exemplary embodiment, and the optimum output impedance is obtained by changing a voltage applied to diode 115 such that the difference between the impedance during the large output operation and the impedance during the small output operation is decreased at each frequency. That is, the gain is brought close to the gain during the small signal operation as much as possible while the maximum output power and efficiency are obtained during the large signal operation.
- semiconductor device 300 of the third exemplary embodiment will specifically be described below with reference to the drawings.
- capacitor 117 is formed in parallel to diode 115 , and bias applying pad 119 is provided.
- Bias applying pad 119 is a terminal that varies the voltage applied to diode 115 .
- Diode 115 and capacitor 117 are electrically connected to the ground potential through grounding wiring 118 .
- diode D 1 and capacitor C 4 correspond to diode 115 and capacitor 117 in FIG. 14 , respectively.
- a variable voltage is applied to the cathode terminal of diode D 1 , and the anode terminal of diode D 1 is electrically connected to the ground potential.
- the circuit constructed with inductor L 2 and capacitor C 2 , the circuit constructed with inductor L 3 and capacitor C 3 , and the circuit constructed with diode D 1 and capacitor C 4 are added to LC low-pass circuit, which is constructed with series inductors L 1 and L 4 and parallel capacitor C 1 , so as to act as the LC high-pass matching circuit.
- capacitor C 4 depends on the capacitance value of diode D 1 . Necessity of capacitor C 4 is eliminated when the capacitance value of diode D 1 is greater than or equal to a desired value.
- a pn-junction diode in which a p-type AlGaN layer used in a gate portion of a GaN GIT (Gate Injection Transistor) is used, is applied to diode 115 .
- the gate electrode of the GaN HFET is used as an anode terminal electrode, and the drain electrode and the source electrode are used as a cathode terminal electrode.
- GaN has the wide band gap (3.39 eV), and has the following features as the transistor and the diode compared with GaAs. That is, (1) high withstand voltage characteristic, (2) high-temperature operation, (3) high surge voltage resistance, (4) high power handling, and (5) low-distortion characteristic (low intermodulation distortion).
- the GaN HFET is suitable for the circuit element, in which a high power handling capability is required to deal with large power, as a high-breakdown-voltage, high-frequency device that can be operated with the high output.
- grounding wiring 118 is connected to the source terminal of the GaN HFET
- the through-hole is made in the silicon substrate of semiconductor chip 101 , and a via hole is made by metalizing the inside of the through-hole to be able to perform the electric connection of diode 115 and capacitor 117 to the ground electrode.
- diode 115 is not limited to the above configuration.
- a pin-junction diode and a Schottky barrier diode in which a Schottky junction of the GaN HFET is used may be used.
- the value of the reactance component indicated by (equation 1) can be varied by adjusting the bias voltage applied to diode D 1 according to the operating frequency of the GaN HFET. That is, diode D 1 acts as a variable reactance element.
- the bias of cathode terminal voltage Vk is set in a reverse bias direction (for example, 15 V). That is, diode D 1 functions so as to decrease the reactance component (X>0) at a low operating frequency.
- the bias of cathode terminal voltage Vk is set to a zero bias. That is, diode D 1 functions so as to decrease the reactance component (X>0) at a high operating frequency.
- semiconductor device 300 of the third exemplary embodiment will be described below using a comparative example. Specifically, a difference in characteristic between semiconductor device 300 of the third exemplary embodiment including the LC high-pass matching circuit constructed with inductors L 2 and L 3 , capacitors C 2 , C 3 , and C 4 , and diode D 1 and a semiconductor device of the comparative example that does not include the LC high-pass matching circuit will be described below.
- FIG. 16 is a Smith chart illustrating the frequency characteristic of the output impedance during the large signal in semiconductor device 300 of the third exemplary embodiment and the semiconductor device of the comparative example.
- the output side of the transistor is expressed by the parallel circuit of the drain-source resistance (Rds) and the drain-source capacitance (Cds).
- the frequency characteristic of the output impedance becomes ZoS 1 (ZoS 1 (@fH) in FIG. 16 ) at a high frequency, and becomes ZoS 2 (ZoS 2 (@fL) in FIG. 16 ) at a low frequency. That is, the impedance reflecting the frequency characteristic of the drain-source capacitance (Cds) is obtained.
- diode D 1 functions so as to decrease the reactance component (X>0) at the low operating frequency, and diode D 1 functions so as to increase the reactance component (X>0) at the high operating frequency, so that the output impedance can be converted.
- the output impedance of semiconductor device 300 is converted into an output impedance position of ZoSHL 2 (ZoSHL 2 (@fL) in FIG. 16 ).
- the output impedance of semiconductor device 300 is converted into an output impedance position of ZoSHL 1 (ZoSHL 1 (@fH) in FIG. 16 ).
- the impedance conversion performed by the LC high-pass matching circuit exhibits a similar tendency during the small signal.
- Semiconductor device 300 of the third exemplary embodiment can be operated in the wideband by setting cathode voltage Vk of diode D 1 according to the operating frequency.
- the output side of the transistor is expressed by the parallel circuit of the drain-source resistance (Rds) and the drain-source capacitance (Cds). Therefore, as illustrated in FIG. 16 , the frequency characteristic of the output impedance becomes ZoS 1 (ZoS 1 (@fH) in FIG. 16 ) at the high frequency, and becomes ZoS 2 (ZoS 2 (@fL) in FIG. 16 ) at the low frequency. That is, the impedance reflecting the frequency characteristic of the drain-source capacitance (Cds) is obtained. When diode D 1 and capacitor C 4 are added, the output impedance is converted into ZoSHL 1 (ZoSHL 1 (@fH) in FIG. 16 ) at the high frequency, and the output impedance is converted into ZoSHL 2 (ZoSHL 2 (@fL) in FIG. 16 ) at the low frequency.
- semiconductor device 300 of the third exemplary embodiment can be operated in the wideband.
- the desired frequency is set in the frequency band by setting cathode terminal voltage Vk based on dependence of the capacitance value of diode D 1 on cathode terminal voltage Vk. Specifically, because the capacitance value of diode D 1 corresponds to cathode terminal voltage Vk on a one-to-one basis, the output impedance is set to a value corresponding to the desired frequency in the range from ZoSHL 2 to ZoSHL 1 .
- FIG. 17A is a graph illustrating dependence of a ratio of the capacitance value at low voltage VL of diode D 1 to the capacitance value at high voltage VH (vertical axis) on cathode terminal voltage Vk (horizontal axis).
- Low voltage VL is near 1 V
- high voltage VH is at 15 V.
- the capacitance of diode D 1 can be adjusted by adjusting cathode terminal voltage Vk. Specifically, the bias voltage of diode D 1 is adjusted by adjusting cathode terminal voltage Vk. That is, the spread of the depletion layer generated in diode D 1 can be adjusted by adjusting cathode terminal voltage Vk, and therefore the capacitance of diode D 1 can be adjusted.
- FIG. 17B is a graph illustrating the return loss (solid line) of the impedance during the large signal based on the impedance during the small signal of the semiconductor device of the comparative example and the return loss (broken line) of the impedance during the large signal based on the impedance during the small signal of semiconductor device 300 of the third exemplary embodiment.
- semiconductor device 300 of the third exemplary embodiment it is found that the mismatch degree is improved at both ends of the band.
- Semiconductor device 300 of the third exemplary embodiment has L 2 of 135 pH, C 2 of 0.88 pF, L 3 of 130 pH, C 3 of 360 pF, and C 4 of 30 pF.
- the lower-limit frequency and the upper-limit frequency in the frequency band can be changed by selecting parameter values of L 2 , C 2 , L 3 , and C 3 .
- semiconductor device 300 of the third exemplary embodiment further includes diode 115 and the application terminal used to apply cathode terminal voltage Vk to the cathode of diode 115 .
- the cathode of diode 115 is electrically connected to one of the electrodes of capacitor 111 , and the anode of diode 115 is grounded.
- the application terminal used to apply cathode terminal voltage Vk is bias applying pad 119 that is of a metal electrode formed in semiconductor chip 101 .
- the LC high-pass matching circuit is added to change cathode terminal voltage Vk, which allows the wideband operation to be performed with as high gain as possible during the large signal operation.
- the capacitance of diode D 1 can be adjusted by adjusting cathode terminal voltage Vk.
- the bias voltage of diode D 1 is adjusted by adjusting cathode terminal voltage Vk. That is, the spread of the depletion layer generated in diode D 1 can be adjusted by adjusting cathode terminal voltage Vk, and therefore the capacitance of diode D 1 can be adjusted. Therefore, in semiconductor device 300 of the third exemplary embodiment, cathode terminal voltage Vk is properly adjusted according to the operating frequency, which allows the characteristic of the LC high-pass matching circuit to be properly adjusted according to the operating frequency. As a result, the decrease in linear gain can be suppressed even if semiconductor device 300 is operated in the wideband.
- semiconductor device 300 of the third exemplary embodiment can also be applied to semiconductor device 200 of the second exemplary embodiment.
- a control voltage is applied to the cathode terminal, the anode terminal is connected to the ground potential, and a positive control voltage is applied to the cathode terminal.
- the configuration of semiconductor device 300 can also be applied to semiconductor device 200 by applying the negative control voltage to the anode terminal.
- a semiconductor device differs from semiconductor device 300 of the third exemplary embodiment only in that capacitor 117 is provided in series with diode D 1 .
- FIG. 18 is a plan view illustrating a configuration of the semiconductor device of the modification
- FIG. 19 is an equivalent circuit diagram of the semiconductor device of the modification.
- capacitor 117 is formed in series with diode 115 , and bias applying pad 119 that is of a terminal varying the voltage applied to diode 115 is provided between diode 115 and capacitor 117 .
- Diode 115 is electrically connected to the ground potential through grounding wiring 118 .
- diode D 1 and capacitor C 4 correspond to diode 115 and capacitor 117 in FIG. 18 , respectively.
- a variable voltage is applied to the cathode terminal of diode D 1 , and the anode terminal of diode D 1 is electrically connected to the ground potential.
- the bias of cathode terminal voltage Vk is set in a reverse bias direction (for example, 15 V). That is, diode D 1 functions so as to decrease the reactance component (X>0) at a low operating frequency.
- the bias of cathode terminal voltage Vk is set to a zero bias. That is, diode D 1 functions so as to increase the reactance component (X>0) at a high operating frequency.
- semiconductor device 300 of the third exemplary embodiment will be described below using a comparative example. Specifically, a difference in characteristic between the semiconductor device of the modification including the LC high-pass matching circuit constructed with inductors L 2 and L 3 , capacitors C 2 , C 3 , and C 4 , and diode D 1 and a semiconductor device of the comparative example that does not include the LC high-pass matching circuit will be described below.
- FIG. 20A is a Smith chart illustrating the frequency characteristic of the output impedance during the large signal in the semiconductor device of the modification and the semiconductor device of the comparative example.
- the frequency characteristic of the output impedance becomes ZoS 1 (ZoS 1 (@fH) in FIG. 20A ) at the high frequency, and becomes ZoS 2 (ZoS 2 (@fL) in FIG. 20A ) at the low frequency. That is, the impedance reflecting the frequency characteristic of the drain-source capacitance (Cds) is obtained.
- diode D 1 functions so as to decrease the reactance component (X>0) at the low operating frequency, and diode D 1 functions so as to increase the reactance component (X>0) at the high operating frequency, so that the output impedance can be converted.
- the output impedance of the semiconductor device of the modification is converted into the output impedance position of ZoSHL 2 (ZoSHL 2 (@fL) in FIG. 20A ).
- the output impedance of the semiconductor device of the modification is converted into an output impedance position of ZoSHL 1 (ZoSHL 1 (@fH) in FIG. 20A ).
- the semiconductor device of the modification can be operated in the wideband by setting cathode voltage Vk of diode D 1 according to the operating frequency.
- the desired frequency is set in the frequency band by setting cathode terminal voltage Vk based on dependence of the capacitance value of diode D 1 on cathode terminal voltage Vk. Specifically, because the capacitance value of diode D 1 corresponds to cathode terminal voltage Vk on a one-to-one basis, the output impedance is set to a value corresponding to the desired frequency in the range from ZoSHL 2 to ZoSHL 1 .
- FIG. 20B is a graph illustrating the return loss (solid line) of the impedance during the large signal based on the impedance during the small signal of semiconductor device of the comparative example and the return loss (broken line) of the impedance during the large signal based on the impedance during the small signal of the semiconductor device of the modification.
- the semiconductor device of the comparative example has a return loss of 9.1 dB
- the semiconductor device of the modification has a return loss of 12.4 dB
- the semiconductor device 100 of the first exemplary embodiment has a return loss of 8.8 dB
- the semiconductor device of the modification has a return loss of 10.2 dB.
- the semiconductor device of the modification has L 2 of 135 pH, C 2 of 0.88 pF, L 3 of 110 pH, C 3 of 30 pF, and C 4 of 330 pF.
- the lower-limit frequency and the upper-limit frequency in the frequency band can be changed by selecting parameter values of L 2 , C 2 , L 3 , and C 3 .
- the semiconductor device of the modification differs from semiconductor device 300 of the third exemplary embodiment only in that capacitor 117 is provided in series with diode D 1 .
- the LC high-pass matching circuit is added to change the voltage applied to cathode terminal voltage Vk, which allows the wideband operation to be performed with as high gain as possible during the large signal operation.
- the capacitance of diode D 1 can be adjusted by adjusting cathode terminal voltage Vk.
- the decrease in linear gain can be suppressed by adjusting cathode terminal voltage Vk according to the operating frequency even if the semiconductor device of the modification is operated in the wideband.
- semiconductor device 300 of the third exemplary embodiment can also be applied to semiconductor device 200 of the second exemplary embodiment.
- a control voltage is applied to the cathode terminal, the anode terminal is connected to the ground potential, and a positive control voltage is applied to the cathode terminal.
- the configuration of semiconductor device 300 can also be applied to semiconductor device 200 by applying the negative control voltage to the anode terminal.
- a semiconductor device differs from semiconductor device 300 of the third exemplary embodiment in that the semiconductor device of the fourth exemplary embodiment includes a detector circuit that detects the output power of semiconductor chip 101 and a bias voltage generator that generates cathode terminal voltage Vk based on a detection result of the detector circuit to apply cathode terminal voltage Vk to bias applying pad 119 .
- FIG. 21 is a circuit diagram illustrating a configuration of the semiconductor device of the fourth exemplary embodiment including the output power detector circuit.
- the kind of modulation for the high-frequency output signal is selected according to the amount of information to be transmitted (transmission rate).
- An output-level operating point of the transmission power amplifier depends on the kind of the modulation.
- the transmission power amplifier can be operated at a saturated output level at which the efficiency is substantially maximized.
- the power amplifier be controlled so as to be operated at the good-linearity output level at which back-off is performed from the saturated output point.
- the back-off level depends on the kind of the modulation.
- the optimum output impedance shifts to the low impedance due to the decrease in Rds and the increase in Cds. Therefore, the optimum output impedance varies according to the output level of the power amplifier.
- the semiconductor device of the fourth exemplary embodiment can be adjusted such that the difference between the impedance during the large output operation and the impedance during the small output operation is decreased at the desired output level of the power amplifier by applying the configuration of the third exemplary embodiment in which the diode is loaded.
- semiconductor device 400 A of the fourth exemplary embodiment includes the power amplifier, namely, the GaN HFET, the detector circuit that detects the output level of the high-frequency output signal from the power amplifier, a control signal unit that generates the bias voltage to be applied to diode D 1 based on the output value of the detector circuit, and a mechanism for bias-application to diode D 1 with a control signal generated by the control signal unit. That is, the control signal corresponds to cathode terminal voltage Vk of the third exemplary embodiment.
- the value of the reactance component indicated by (equation 1) can be varied by adjusting the bias voltage applied to diode D 1 according to the output level of the high-frequency output signal of the GaN HFET.
- a transmission wave signal is provided to the input side of power amplifier 301 , and the output of power amplifier 301 is transmitted through main line 302 of directional coupler 320 .
- One of terminals of sub-line 303 that constitutes directional coupler 320 together with main line 302 is connected to one of terminals of resistance element 304 .
- the other terminal of resistance element 304 is grounded through capacitor 305 , and connected to the output of bias circuit 307 through inductor 306 .
- the other terminal of sub-line 303 is connected to the anode terminal of diode 308 , the cathode terminal of diode 308 is grounded through capacitor 309 and resistance element 310 that are connected in parallel, and the cathode terminal of diode 308 is connected to control terminal 312 of power amplifier 301 through controller 311 .
- Power amplifier 301 is in the state in which semiconductor device 300 of the third exemplary embodiment is mounted on a ceramic package or the like.
- a terminal (hereinafter, referred to as a control voltage applying terminal) used to apply cathode terminal voltage Vk to the cathode terminal of diode D 1 of the third exemplary embodiment is provided in the package in addition to the input terminal and output terminal for the high-frequency signal.
- Control terminal 312 is connected to the control voltage applying terminal, and is electrically connected to the cathode terminal of diode D 1 through bias applying pad 119 .
- Power amplifier 301 is constructed with the elements (such as the GaN HFET, inductors L 1 to L 4 , capacitors C 1 to C 4 , and diode D 1 ) included in semiconductor device 300 of the third exemplary embodiment.
- Bias circuit 307 sets the operating point of diode 308 to forward voltage Vf or less.
- Sub-line 303 is roughly coupled to main line 302 , and a monitor signal that is obtained as a part of the transmission wave signal is input to diode 308 through main line 302 .
- diode 308 rectifies the monitor signal at the operating point to extract an envelope component of the monitor signal.
- Capacitor 309 and resistance element 310 act as a smoothing circuit.
- An instantaneous value of the envelope component corresponds to power (amplitude) of the monitor signal.
- Controller 311 stores input/output characteristic data of the GaN HFET at each operating frequency and data of the voltage applied to diode D 1 at each point of the input/output characteristic in a memory. The data is acquired by previously performing calibration.
- semiconductor device 400 A of the fourth exemplary embodiment includes directional coupler 320 that detects the output power of power amplifier 301 and controller 311 that generates cathode terminal voltage Vk based on the detection result of directional coupler 320 to apply cathode terminal voltage Vk to bias applying pad 119 .
- Directional coupler 320 and controller 311 correspond to the detector circuit and the bias voltage generator, respectively.
- semiconductor device 400 A of the fourth exemplary embodiment can be operated at the good-linearity output level at which the back-off is performed from the saturated output point. Because the back-off level can be set by controller 311 at any value, the low-distortion characteristic can be obtained in any modulation system by properly setting the back-off level according to the digital modulation system. Semiconductor device 400 A is useful for a high-output, high-gain microwave-band power amplifier.
- a semiconductor device differs from semiconductor device 400 A of the fourth exemplary embodiment in that a detector circuit detects the input power of semiconductor chip 101 .
- FIG. 22 is a circuit diagram illustrating a configuration of the semiconductor device of the modification of the fourth exemplary embodiment including the input power detector circuit.
- the configuration of the semiconductor device including the output power detector circuit of the fourth exemplary embodiment in FIG. 21 is provided on the input side of power amplifier 301 .
- the value of the reactance component indicated by (equation 1) can be varied by adjusting the bias voltage applied to diode D 1 according to the level of the high-frequency input signal input to the GaN HFET.
- Semiconductor device 400 B of the modification includes directional coupler 320 that detects the input power of power amplifier 301 and controller 311 that generates cathode terminal voltage Vk based on the detection result of directional coupler 320 to apply cathode terminal voltage Vk to bias applying pad 119 .
- semiconductor device 400 B of the modification the high output and the high gain can be obtained by varying the bias voltage of diode D 1 used as the variable reactance element according to the high-frequency input signal level of the GaN HFET.
- Semiconductor device 400 B is useful for the high-output, high-gain microwave-band power amplifier.
- the semiconductor device of the present invention is described above based on the exemplary embodiments and the modifications thereof.
- the present invention is not limited to the above exemplary embodiments and the modifications.
- Various modifications of the exemplary embodiments and modifications or a combination of constituents in the exemplary embodiments and the modifications can be made without departing from the scope of the present invention.
- the LC high-pass matching circuit is constructed with inductor L 2 and capacitor C 2
- the LC high-pass matching circuit is constructed with inductors L 2 and L 3 and capacitors C 2 and C 3 .
- the inductor and capacitor of the LC high-pass matching circuit are not limited to the above configurations.
- the LC high-pass matching circuit may include the two inductors and the one capacitor, or include the one inductor and the two capacitors.
- the LC high-pass matching circuit may include the two inductors and the three capacitors, include the three inductors and the two capacitors, or include at least the three inductors and at least the three capacitors.
- the values of inductors L 1 to L 3 and capacitors C 1 to C 3 and the structural parameters of the wiring length are not limited to the above values and structural parameters, but the values and the structural parameters can take optimum values according to the characteristic of the semiconductor device.
- the active element formed on the semiconductor chip is not limited to the GaN HFET, but the active element may be made of any group-III nitride semiconductor (such as AlN and AlGaN).
- circuit configurations are illustrated in the above circuit diagrams by way of example, but the present invention is not limited to the circuit configurations. That is, in addition to the above circuit configurations, a circuit that can implement the distinguishing feature of the present invention is also included in the present invention. For example, a circuit configuration in which an element such as a transistor, a resistance element, or a capacitative element is connected in parallel to or series with an element within a range where the functions similar to those of the above-mentioned circuit configurations can be obtained is also included in the present invention.
- the term “connected” in the exemplary embodiments is not limited to the case that two terminals (nodes) are directly connected to each other, but includes the case that the two terminals (nodes) are connected to each other through an element within a range where a similar function is obtained.
- the present invention is useful for the semiconductor device used in the microwave band, particularly for the high-output power amplifier.
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Abstract
Description
XL+XC=jX (Equation 1)
In (equation 1), an inductance component XL is expressed by (equation 2) in terms of impedance, and a capacitance component XC is expressed by (equation 3) in terms of impedance.
XL=j(2πf)L (Equation 2)
XC=1/(j(2πf)C) (Equation 3)
Where j is an imaginary unit, f is a frequency, and L is an inductance value of
return loss rl=−20 Log|ρ| (Equation 4)
reflection coefficient ρ=(Z−Z0)/(Z+Z0) (Equation 5)
|ρ|=(SWR−1)/(SWR+1) (Equation 6)
standing wave ratio SWR=(1+|ρ|)/(1−|ρ|) (Equation 7)
Where Z0 is reference impedance and Z is impedance of a comparative target.
-
- 100, 200, 300, 400A, 400B semiconductor device
- 101, 201 semiconductor chip
- 102 gate pad
- 103, 203 source pad
- 104 drain pad
- 105 gate terminal
- 106 source terminal
- 107 drain terminal
- 108 dielectric substrate
- 109, 110, 207, 501, 1101 wiring pattern
- 111, 117, 206, 305, 309, 505, C1, C2, C3, C4 capacitor
- 112, 113, 114, 502, 503, 504 bonding wire
- 115, 308, D1 diode
- 116 LC high-pass matching circuit
- 118 grounding wiring
- 119 bias applying pad
- 150 region
- 202 gate extraction wiring
- 204 drain extraction wiring
- 205 stub wiring
- 208 open stub
- 301 power amplifier
- 302 main line
- 303 sub-line
- 304, 310 resistance element
- 306, L1, L2, L3, L4 inductor
- 307 bias circuit
- 311 controller
- 312 control terminal
- 320 directional coupler
- 801 field effect transistor (FET)
- 802 circuit
- 901 transistor chip
- 904 metal wire
- 906, 907 pad
- 908 dielectric chip
- 910 output strip line
- 1091 protrusion
Claims (14)
Applications Claiming Priority (3)
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JP2012-247095 | 2012-11-09 | ||
JP2012247095 | 2012-11-09 | ||
PCT/JP2013/004094 WO2014073134A1 (en) | 2012-11-09 | 2013-07-02 | Semiconductor device |
Related Parent Applications (1)
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PCT/JP2013/004094 Continuation WO2014073134A1 (en) | 2012-11-09 | 2013-07-02 | Semiconductor device |
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US20150235941A1 US20150235941A1 (en) | 2015-08-20 |
US9490208B2 true US9490208B2 (en) | 2016-11-08 |
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US14/702,061 Active US9490208B2 (en) | 2012-11-09 | 2015-05-01 | Semiconductor device |
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US (1) | US9490208B2 (en) |
JP (1) | JP6191016B2 (en) |
WO (1) | WO2014073134A1 (en) |
Cited By (1)
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US11336241B2 (en) * | 2017-11-30 | 2022-05-17 | Sony Semiconductor Solutions Corporation | High-frequency amplifier, electronic device, and communication device |
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EP2991085B1 (en) * | 2014-08-28 | 2020-08-26 | Ampleon Netherlands B.V. | Transformer |
JP6332097B2 (en) * | 2015-03-24 | 2018-05-30 | 三菱電機株式会社 | Power amplifier |
JP6569417B2 (en) * | 2015-09-16 | 2019-09-04 | 三菱電機株式会社 | amplifier |
JP6377305B2 (en) | 2016-07-01 | 2018-08-22 | 三菱電機株式会社 | amplifier |
US10491172B2 (en) | 2016-08-09 | 2019-11-26 | Qualcomm Incorporated | Systems and methods providing a matching circuit that bypasses a parasitic impedance |
US10374558B1 (en) * | 2018-04-30 | 2019-08-06 | Speedlink Technology Inc. | Wideband distributed power amplifier utilizing metamaterial transmission line conception with impedance transformation |
CN109860155A (en) * | 2018-12-12 | 2019-06-07 | 江苏博普电子科技有限责任公司 | A kind of GaN microwave power device comprising π type matching network |
CN111510074B (en) * | 2019-01-31 | 2023-06-23 | 苏州远创达科技有限公司 | Radio frequency power amplifier with high video bandwidth |
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WO2014073134A1 (en) | 2014-05-15 |
JP6191016B2 (en) | 2017-09-06 |
JPWO2014073134A1 (en) | 2016-09-08 |
US20150235941A1 (en) | 2015-08-20 |
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