CN111510074B - Radio frequency power amplifier with high video bandwidth - Google Patents
Radio frequency power amplifier with high video bandwidth Download PDFInfo
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- CN111510074B CN111510074B CN201910097927.4A CN201910097927A CN111510074B CN 111510074 B CN111510074 B CN 111510074B CN 201910097927 A CN201910097927 A CN 201910097927A CN 111510074 B CN111510074 B CN 111510074B
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- capacitor
- damping resistor
- power device
- video bandwidth
- radio frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/552—Indexing scheme relating to amplifiers the amplifier being made for video applications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind ofA high video bandwidth radio frequency power amplifier comprising: a power device and a heat dissipation plate; the power device comprises a carrier flange, wherein a transistor and a decoupling circuit module are mounted on the carrier flange in a pasting mode, and the transistor is connected with the decoupling circuit module through a lead; the power device is welded and fixed above the heat dissipation plate; the decoupling circuit module at least comprises a first capacitor, a second capacitor and a damping resistor, wherein the damping resistor is connected with the first capacitor and the second capacitor, the first capacitor, the second capacitor and the damping resistor are made of a plurality of layers of co-fired ceramic materials in a stacked mode, the first capacitor and the inductance of the damping resistor form a video LC resonant circuit, and the second capacitor is connected with the inductance formed by the damping resistor and a lead in series and then is connected with a series equivalent inductance L in the circuit in series s Forming an ultralow frequency resonant circuit. The processing technology is simple, the volume is small, and the maximization of video bandwidth is realized simultaneously.
Description
Technical Field
The invention relates to the technical field of wireless communication, in particular to a radio frequency power amplifier with high video bandwidth.
Background
The power amplifier is one of the important core modules of the radio frequency front end in the wireless communication system, and has a crucial influence on the overall performance of the communication system. Advanced wireless communication systems require increasingly higher data speeds and bandwidths. The signal bandwidth may limit unlimited amplification of RF radio frequency power devices. The signal bandwidth and video bandwidth (low frequency) are important to meet the linearity requirements of wireless communication systems. Among other things, video bandwidth is a major factor limiting the performance improvement of digital predistortion systems.
Currently, in order to improve the video bandwidth of an RF radio frequency power device, as shown in fig. 1, electronic components may be disposed in the internal structure of the power device to form a decoupling LC circuit between the electronic components in the power device, and an equivalent circuit diagram is shown in fig. 2. However, in the existing mainstream high-power rf power amplifier, the power device generally adopts a ceramic package structure, and the internal space of the ceramic package structure is limited and cannot be expanded outwards, so that the space and the size of the LC circuit (large capacitance and small inductance) are limited, and the thickness of the second capacitor 5' is thickThe degree is often very thick, so that a groove is required to be formed in the carrier flange, the processing technology is complex, and the cost is high. In addition, the lead wire connected with the second capacitor 5' forms an inductance L v ，L v Matching parallel inductance L in circuit d +L s Together form an equivalent inductance, due to (L d +L s )>>L v Therefore, the equivalent inductance is approximately equal to L v Thus video bandwidth
Therefore, the existing power device structure is difficult to achieve the maximization of video bandwidth.
Disclosure of Invention
Aiming at the technical problems, the invention aims to provide the radio frequency power amplifier with high video bandwidth, which has simple processing technology and can realize the maximization of the video bandwidth.
In order to solve the problems in the prior art, the technical scheme provided by the invention is as follows:
a high video bandwidth radio frequency power amplifier comprising: a power device and a heat dissipation plate;
the power device comprises a carrier flange, wherein a transistor and a decoupling circuit module are mounted on the carrier flange in a pasting mode, and the transistor is connected with the decoupling circuit module through a lead;
the power device is welded and fixed above the heat dissipation plate;
the decoupling circuit module at least comprises a first capacitor, a second capacitor and a damping resistor, wherein the damping resistor is connected with the first capacitor and the second capacitor, the first capacitor, the second capacitor and the damping resistor are made of a plurality of layers of co-fired ceramic materials in a stacked mode, the first capacitor and the inductance of the damping resistor form a video LC resonant circuit, and the second capacitor is connected with the inductance formed by the damping resistor and a lead in series and then is connected with a series equivalent inductance L in the circuit in series s Forming an ultralow frequency resonant circuit.
In a preferred technical scheme, the capacitance value of the first capacitor is greater than 100pF.
In a preferred technical scheme, the capacitance value of the second capacitor is greater than 10nF.
In a preferred embodiment, the damping resistance is between 0.1 ohm and 5 ohm.
In the preferred technical scheme, the solar cell further comprises a protective cover, wherein the protective cover covers the power device, is fixed on the radiating plate and forms a closed cavity with the radiating plate.
Compared with the scheme in the prior art, the invention has the advantages that:
in order to improve the video bandwidth of the power device, the added decoupling circuit module is made of stacked layers of co-fired ceramic materials, the decoupling circuit module comprises a first capacitor and a second capacitor connected through a damping resistor, the decoupling circuit module is arranged in the power device, and the power device and the decoupling circuit module can be simplified into an equivalent circuit shown in fig. 3. The second capacitor forms a decoupling capacitor in the LC decoupling circuit, the connecting lead forms a decoupling inductor in the LC decoupling circuit, the first capacitor circuit is directly connected with a damping resistor connected in series with the second capacitor, and the wiring inductor Lv in the prior art does not exist, so that the structure is favorable for realizing the maximization of video bandwidth.
Meanwhile, the structure does not need to be provided with a groove on the carrier flange, the processing technology is simple, and the cost is low.
Drawings
The invention is further described below with reference to the accompanying drawings and examples:
FIG. 1 is a top view of a prior art high video bandwidth radio frequency power amplifier;
fig. 2 is an equivalent circuit diagram of a prior art high video bandwidth rf power amplifier of the present invention;
FIG. 3 is an equivalent circuit diagram of an embodiment of the present invention;
FIG. 4 is a top view of a radio frequency power amplifier according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of the radio frequency power amplifier shown in FIG. 4 taken along the direction A-A;
fig. 6 is a schematic diagram of a decoupling circuit module according to the present invention.
Reference numerals:
100': power device, 1': die, 2': input/output pins, 3': first capacitance, 5': second capacitance, 6': a lead wire;
1: power device, 2: input/output pins, 3: heat dissipation plate, 5: protective cover, 10: decoupling circuit module, 11: carrier flange, 12: lead wire, 13: die, 14: first capacitance, 22: second capacitance, 15: damping resistor.
Detailed Description
The above-described aspects are further described below in conjunction with specific embodiments. It should be understood that these examples are illustrative of the present invention and are not intended to limit the scope of the present invention. The implementation conditions used in the examples may be further adjusted according to the conditions of the specific manufacturer, and the implementation conditions not specified are generally those in routine experiments.
As shown in fig. 3, 4, 5 and 6, the radio frequency power amplifier includes:
a power device 1 and a heat dissipation plate 3; as shown in fig. 4, the power device 1 is welded and fixed above the heat dissipation plate 3.
The power device 1 comprises a carrier flange 11, a transistor and decoupling circuit module 10 is attached to the carrier flange 11, the transistor is connected with a plurality of transistor dies 13, the transistor is connected with the decoupling circuit module 10 through a lead 12, and the transistor and decoupling circuit module 10 can be welded on the carrier flange 11 through a crystal face welding device. May be provided inside the power device 1.
As shown in fig. 6, the decoupling circuit module 10 includes a first capacitor 14, a second capacitor 22 and a damping resistor 15, where the damping resistor 15 connects the first capacitor 14 and the second capacitor 22, and the first capacitor 14, the second capacitor 22 and the damping resistor 15 are all made of a stack of multiple layers of co-fired ceramic materials, preferably a package, and the co-fired ceramic materials may include multiple layers of high-temperature co-fired ceramic materials and/or multiple layers of low-temperature co-fired ceramic materials, and in this embodiment, the upper multiple layers (2 layers are shown in the figure) are the first capacitor C made of materials with small dielectric constants d 14, the lower layer is a second capacitor C composed of a material with larger dielectric constant v 22, of course also including a ground plane, in addition to which a damping resistor 15 may be provided in the module, or alternativelyTo be disposed at the uppermost layer, etc.
First capacitor C d And 14 is a radio frequency blocking capacitor.
In this way, the circuit formed by the power device 1 and the decoupling circuit module 10 can be simplified into an equivalent circuit as shown in fig. 3, and three resonant circuits can appear in the equivalent circuit due to different frequencies.
The first resonant circuit is a radio frequency resonant circuit formed by the output parasitic capacitance of the transistor and the inductance Ld formed by the lead 12.
The second resonant circuit is a second capacitor C v Series damping resistor R d And inductance L d Then and the series equivalent inductance L in the circuit s An ultralow frequency resonant circuit is formed, and the formula of the resonant circuit is
Damping resistance can effectively reduce the noise in the ultra-low frequency range<50 MHz) of the impedance variation plays a smoothing role, including amplitude and phase. The smoothed amplitude and phase have a lower memory effect. Has important function for improving the linearity of the power amplifier and the performance of the digital pre-true system.
The third resonant circuit is a first capacitor C d 14 and the inductance L (R) of the damping resistor d ) Form a video LC resonance circuit, a first capacitor C d 14 is the video decoupling capacitance, expressed by the formula of video bandwidth
It can be known that the inductance of the damping resistor Rd is extremely small, so that the video bandwidth is theoretically expanded to a certain extent.
As a specific example, the first capacitance may be greater than 100pF.
The second capacitance may be greater than 10nF.
In addition, the damping resistance may be between 0.1 ohms and 5 ohms.
In addition, in order to protect the electronic components inside the power device 1, as shown in fig. 5, a protection cover 5 may be further disposed outside the power device, and the protection cover 5 is fixed on the input/output pin 2 and forms a closed cavity with the input/output pin 2. The protective cover 5 covers all electronic components in the power device 1 for protecting the power device 1 from debris entering the power device 1.
The assembly mode is flexible and various, the embodiment is described in the traditional package mode, such as ceramics, OMP, cavity plastics and the like, and the embodiment can be applied to the power device PCB assembly mode without the package structure.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.
Claims (5)
1. A high video bandwidth radio frequency power amplifier comprising: a power device and a heat dissipation plate;
the power device comprises a carrier flange, wherein a transistor and a decoupling circuit module are mounted on the carrier flange in a pasting mode, and the transistor is connected with the decoupling circuit module through a lead;
the power device is welded and fixed above the heat dissipation plate;
the decoupling circuit module at least comprises a first capacitor, a second capacitor and a damping resistor, wherein the damping resistor is connected with the first capacitor and the second capacitor, the first capacitor, the second capacitor and the damping resistor are made of a plurality of layers of co-fired ceramic materials in a stacked mode, the first capacitor and the inductance of the damping resistor form a video LC resonant circuit, and the second capacitor is connected with the inductance formed by the damping resistor and a lead in series and then is connected with a series equivalent inductance L in the circuit in series s Forming an ultralow frequency resonant circuit.
2. The high video bandwidth radio frequency power amplifier of claim 1, wherein the first capacitance has a capacitance value greater than 100pF.
3. The high video bandwidth radio frequency power amplifier of claim 1, wherein the second capacitor has a capacitance value greater than 10nF.
4. The high video bandwidth radio frequency power amplifier of claim 1, wherein the damping resistance is between 0.1 ohms and 5 ohms.
5. The high video bandwidth rf power amplifier of claim 1, further comprising a protective cover covering the power device, the protective cover being secured to the heat sink and forming a closed cavity with the heat sink.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910097927.4A CN111510074B (en) | 2019-01-31 | 2019-01-31 | Radio frequency power amplifier with high video bandwidth |
| PCT/CN2020/073368 WO2020156351A1 (en) | 2019-01-31 | 2020-01-21 | Radio frequency power amplifier having high video bandwidth |
| JP2021545293A JP7312840B2 (en) | 2019-01-31 | 2020-01-21 | Wide Video Bandwidth RF Power Amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910097927.4A CN111510074B (en) | 2019-01-31 | 2019-01-31 | Radio frequency power amplifier with high video bandwidth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111510074A CN111510074A (en) | 2020-08-07 |
| CN111510074B true CN111510074B (en) | 2023-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910097927.4A Active CN111510074B (en) | 2019-01-31 | 2019-01-31 | Radio frequency power amplifier with high video bandwidth |
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| Country | Link |
|---|---|
| JP (1) | JP7312840B2 (en) |
| CN (1) | CN111510074B (en) |
| WO (1) | WO2020156351A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204168250U (en) * | 2014-11-04 | 2015-02-18 | 四川九洲电器集团有限责任公司 | A kind of LTCC power amplifier module |
| CN104662795A (en) * | 2012-09-25 | 2015-05-27 | 三菱电机株式会社 | Microwave amplifier device |
| CN107919351A (en) * | 2016-10-11 | 2018-04-17 | 苏州远创达科技有限公司 | A kind of radio frequency power amplification modules and its assemble method |
| CN207732726U (en) * | 2017-12-13 | 2018-08-14 | 上海航天电子有限公司 | Miniaturization, low-power consumption low noise amplification module based on LTCC technology |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003298364A (en) * | 2002-04-03 | 2003-10-17 | Hitachi Ltd | High frequency power amplifier |
| WO2010070390A1 (en) * | 2008-12-16 | 2010-06-24 | Freescale Semiconductor, Inc. | High power semiconductor device for wireless applictions and method of forming a high power semiconductor device |
| JP6191016B2 (en) * | 2012-11-09 | 2017-09-06 | パナソニックＩｐマネジメント株式会社 | Semiconductor device |
| CN202977410U (en) * | 2012-11-19 | 2013-06-05 | 苏州远创达科技有限公司 | Semiconductor part |
| US9438184B2 (en) * | 2014-06-27 | 2016-09-06 | Freescale Semiconductor, Inc. | Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof |
| US10432152B2 (en) * | 2015-05-22 | 2019-10-01 | Nxp Usa, Inc. | RF amplifier output circuit device with integrated current path, and methods of manufacture thereof |
| NL2017206B1 (en) * | 2016-07-21 | 2018-01-30 | Ampleon Netherlands Bv | Integrated passive device for RF power amplifier package |
| CN110521114B (en) * | 2017-03-28 | 2023-05-23 | 三菱电机株式会社 | Semiconductor device with a semiconductor device having a plurality of semiconductor chips |
| JP7258612B2 (en) * | 2019-03-15 | 2023-04-17 | 株式会社東芝 | high frequency circuit |
-
2019
- 2019-01-31 CN CN201910097927.4A patent/CN111510074B/en active Active
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2020
- 2020-01-21 WO PCT/CN2020/073368 patent/WO2020156351A1/en active Application Filing
- 2020-01-21 JP JP2021545293A patent/JP7312840B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104662795A (en) * | 2012-09-25 | 2015-05-27 | 三菱电机株式会社 | Microwave amplifier device |
| CN204168250U (en) * | 2014-11-04 | 2015-02-18 | 四川九洲电器集团有限责任公司 | A kind of LTCC power amplifier module |
| CN107919351A (en) * | 2016-10-11 | 2018-04-17 | 苏州远创达科技有限公司 | A kind of radio frequency power amplification modules and its assemble method |
| CN207732726U (en) * | 2017-12-13 | 2018-08-14 | 上海航天电子有限公司 | Miniaturization, low-power consumption low noise amplification module based on LTCC technology |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020156351A1 (en) | 2020-08-06 |
| CN111510074A (en) | 2020-08-07 |
| JP7312840B2 (en) | 2023-07-21 |
| JP2022518866A (en) | 2022-03-16 |
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