US9472458B2 - Method of reducing residual contamination in singulated semiconductor die - Google Patents
Method of reducing residual contamination in singulated semiconductor die Download PDFInfo
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- US9472458B2 US9472458B2 US14/612,994 US201514612994A US9472458B2 US 9472458 B2 US9472458 B2 US 9472458B2 US 201514612994 A US201514612994 A US 201514612994A US 9472458 B2 US9472458 B2 US 9472458B2
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Definitions
- the present invention relates, in general, to electronics and, more particularly, to methods of forming semiconductors.
- each scribe grid usually had a large width, generally about one hundred fifty (150) microns, which consumed a large portion of the semiconductor wafer. Additionally, the time required to scribe each singulation line on the semiconductor wafer could take over one hour or more. This time reduced the throughput and manufacturing capacity of a production facility.
- Plasma dicing is a promising process compared to scribing and other alternative processes because it supports narrower scribe lines, has increased throughput, and can singulate die in varied and flexible patterns.
- plasma dicing has had manufacturing implementation challenges. Such challenges have included non-compatibility with wafer backside layers, such as backmetal layers, because the etch process has been unable to effectively remove the backside layers from the singulation lines. Removing the backside layers from the scribe lines is necessary to facilitate subsequent processing, such as pick-and-place and assembly processes.
- plasma dicing can leave contaminates, such as residual polymer materials or fluorine residues, on surfaces, including but not limited to sidewall surfaces, of the singulated die. Such contaminants can reduce the quality and reliability of the singulated die.
- FIG. 1 illustrates a reduced plan view of an embodiment of a semiconductor wafer in accordance with the present invention
- FIGS. 2-10 illustrate partial cross-sectional views of an embodiment of the semiconductor wafer of FIG. 1 at various stages in a process of singulating die from the wafer in accordance with an embodiment of the present invention
- FIG. 11 illustrates a partial cross-sectional view of an embodiment of the semiconductor wafer of FIG. 10 or FIG. 15 at a later stage of processing in accordance with an embodiment of the present invention
- FIGS. 12-15 illustrate partial cross-sectional views of an embodiment of the semiconductor wafer of FIG. 1 at various stages of singulating die from the wafer in accordance with another embodiment of the present invention.
- FIG. 16 illustrates a partial cross-sectional view of another embodiment of the present invention.
- major surface when used in conjunction with a semiconductor region, wafer, or substrate means the surface of the semiconductor region, wafer, or substrate that forms an interface with another material, such as a dielectric, an insulator, a conductor, or a polycrystalline semiconductor.
- the major surface can have a topography that changes in the x, y and z directions.
- FIG. 1 is a reduced plan view that graphically illustrates a semiconductor wafer 10 at a later step in fabrication.
- Wafer 10 includes a plurality of semiconductor die, such as die 12 , 14 , 16 , and 18 , that are formed on or as part of semiconductor wafer 10 .
- Die 12 , 14 , 16 , and 18 are spaced apart from each other on wafer 10 by spaces in which singulation lines are to be formed or defined, such as scribe lines or singulation lines 13 , 15 , 17 , and 19 .
- all of the semiconductor die on wafer 10 generally are separated from each other on all sides by areas where scribe lines or singulation lines, such as singulation lines 13 , 15 , 17 , and 19 are to be formed.
- Die 12 , 14 , 16 , and 18 can be any kind of electronic device including semiconductor devices such as diodes, transistors, discrete devices, sensor devices, optical devices, integrated circuits or other devices known to one of ordinary skill in the art.
- wafer 10 has completed wafer processing including the formation of a backside layer described hereinafter.
- FIG. 2 illustrates an enlarged cross-sectional view of wafer 10 at an early step in a die singulation method in accordance with a first embodiment.
- wafer 10 is attached to a carrier substrate, transfer tape, or carrier tape 30 that facilitates supporting the plurality of die after they are singulated.
- carrier tapes are well known to those of skill in the art.
- carrier tape 30 can be attached to a frame 40 , which can include frame portions or portions 401 and 402 . As illustrated, carrier tape 30 can be attached to surface 4010 of frame portion 401 and to surface 4020 of frame portion 402 .
- wafer 10 can include a bulk substrate 11 , such as a silicon substrate, which can include opposing major surfaces 21 and 22 .
- contact pads 24 can be formed along portions of major surface 21 to provide for electrical contact between structures formed within substrate 11 and next levels of assembly or external elements.
- contact pads 24 can be formed to receive bonding wires or clips that may be subsequently attached to contact pads 24 , or contact pads 24 can be formed to receive a solder ball, bump or other type of attachment structure.
- Contact pads 24 generally can be a metal or other conductive material.
- a dielectric material 26 such as a blanket deposited dielectric layer can be formed on or overlying major surface 21 to function as a passivation layer for wafer 10 .
- dielectric material 26 can be a material that etches at a slower rate than that of substrate 11 .
- dielectric material 26 can be a silicon oxide, silicon nitride, or polyimide when substrate 11 is silicon.
- wafer 10 further includes a layer of material 28 formed on or overlying major surface 22 of wafer 10 .
- layer 28 can be a conductive backmetal layer.
- layer 28 can be a multi-layer metal system such as titanium/nickel/silver, titanium/nickel/silver/tungsten, chrome/nickel/gold, copper, copper alloys, gold, or other materials known to those skilled in the art.
- layer 28 can be a wafer backside coating (WBC) film, such as a die-attach coating.
- WBC wafer backside coating
- FIG. 3 illustrates an enlarged cross-sectional view of wafer 10 at a subsequent step during a plasma etch singulation process.
- wafer 10 can be mounted on carrier tape 30 and then can be placed within an etch apparatus 300 , such as a plasma etch apparatus.
- substrate 11 can be etched through the openings to form or define singulation lines or openings 13 , 15 , 17 , and 19 extending from major surface 21 .
- the etching process can be performed using a chemistry (generally represented as arrows 31 ) that selectively etches silicon at a much higher rate than that of dielectrics and/or metals.
- wafer 10 can be etched using a process commonly referred to as the Bosch process.
- wafer 10 can be etched using the Bosch process in a deep reactive ion etch system. Such a system is available from PlasmaTherm LLC of St. Moscow, Fla., U.S.A.
- the width of singulation lines 13 , 15 , 17 , and 19 can be from about five microns to about fifteen microns. Such a width is sufficient to ensure that the openings that form singulation lines 13 , 15 , 17 , and 19 can be formed completely through substrate 11 stopping proximate to layer 28 because of the etch selectivity as generally illustrated in FIG. 4 .
- layer 28 can be used as a stop layer for the plasma etch singulation process.
- singulation lines 13 , 15 , 17 , and 19 can be formed in about fifteen to about thirty minutes using the Bosch process.
- FIG. 5 illustrates a cross-sectional view of wafer 10 at a subsequent process step.
- a pressurized fluid removal step, a fluid ablation step, or a fluid machining step is used to remove portions of layer 28 from within singulation lines 13 , 15 , 17 , and 19 in accordance with the present embodiment.
- frame 40 including wafer 10 on carrier tape 30 can be placed in a fluid spin rinse apparatus 60 .
- major surface 21 of wafer 10 can be facing upward or away from carrier tape 30 .
- apparatus 60 can be configured with a nozzle or dispense fixture 61 placed above wafer 10 as illustrated in FIG. 5 .
- Frame 40 and carrier tape 30 can be placed on a support structure 63 such as a vacuum chuck.
- structure 63 can be configured to spin or rotate as generally represented by arrow 64 .
- structure 63 can be configured to stretch or expand carrier tape 30 , as generally represented by arrow 69 , to contribute additional forces to layer 28 to assist in its removal or separation from within the singulation lines.
- Apparatus 60 can include a tub or basin structure 67 , which can function to contain and to collect process effluent through outlet 68 into a collection tub 71 .
- a tub or basin structure 67 can function to contain and to collect process effluent through outlet 68 into a collection tub 71 .
- One benefit of the present method and apparatus is that material from layer 28 removed during the machining process can be saved for reclaim or for an environmentally appropriate disposal technique.
- layer 28 can be removed or machined using the process described above in a Disco brand spin-rinse apparatus.
- a machining medium such as a fluid 72
- nozzle 61 can move or swing across wafer 10 as generally represented by arrows 74 .
- fluid 72 can be liquids, gases, mixtures thereof, or another material that removes layer 28 while minimizing damage to or causing unwanted contamination of die 12 , 14 , 16 , and 18 .
- fluid 72 can be water.
- fluid 72 can be air or nitrogen.
- a surfactant can be added to fluid 72 , such as a DiamaflowTM surfactant manufactured by KETECA of Phoenix, Ariz., U.S.A.
- an abrasive material can be added to fluid 72 .
- fluid 72 can be a component configured to reduce the presence of residual films or layers left on the outer or exposed surfaces of die 12 , 14 , 16 , and 18 including sidewall surfaces adjacent singulation lines 13 , 15 , 17 , and 19 .
- fluid 72 can be an electronic grade solvent configured to reduce the presence of residual polymer material(s) and/or other contaminants or unwanted solutes (for example, fluorinated solutes) remaining on the die after the plasma dicing process with minimal impact on the characteristics of carrier substrate 30 . It is contemplated that removing approximately several microns of residual material should not significantly damage carrier substrate 30 .
- a fluid 72 can be acetone, acetonitrile, methanol, 2-propanol, other solvents miscible in water, or other components capable of removing unwanted solutes as known to those of ordinary skill in the art.
- fluid 72 can be a mixture of de-ionized water and acetone.
- fluid 72 can be applied at room temperature.
- fluid 72 can be heated or cooled.
- wafer 10 can be immersed in a bath containing fluid 72 .
- fluid 72 does not have to be pressurized but instead can be deposited onto wafer 10 and then wafer 10 can be rotated at a high speed to spread fluid 72 across wafer 10 .
- fluid 72 can be disposed or provided on or both sides of wafer 10 and carrier 40 using a batch spray tool, such as a spray solvent tool.
- a batch spray tool such as a spray solvent tool.
- solvent includes, but is not limited, a substance that is configured to dissolve another material; or a substance that is configured to undercut a material, which can then be washed away.
- fluid 72 can be de-ionized water at a pressure from about 10,342 Kilopascal (Kpa) to about 20,684 Kpa (about 1500 pounds/square inch (psi) to about 3000 psi) as measured at the fluid pump.
- Wafer 10 can be spinning at a rate from about 700 rpm to 1500 rpm with fluid 72 flowing onto wafer 10 from about 2 minutes to about 5 minutes.
- the method described herein can also be used to remove other structures, such as alignment keys, test structures, and/or residual semiconductor material, from within singulation lines 13 , 15 , 17 , and/or 19 that may not be removed during the plasma etch process.
- the steps described hereinafter can be used in one embodiment to removing remaining portions 280 from the singulation lines.
- FIG. 6 illustrates a cross-sectional view of wafer 10 after portions of layer 28 within singulation lines 13 , 15 , 17 , and 19 have been removed.
- portions 280 of layer 28 can remain after the fluid machining process described previously. Portions 280 can remain because singulation lines 13 , 15 , 17 , and 19 are configured with narrower widths when singulation processes, such as plasma-singulation, are used instead of conventional dicing processes that require much wider singulation lines.
- FIG. 7 illustrates a cross-sectional view of wafer 10 at a subsequent process step.
- carrier tape 30 can be exposed to an ultra-violet (UV) light to source to reduce the adhesiveness of the tape.
- a carrier tape 301 can be applied or attached to conductive pads 24 along upper surfaces of wafer 10 (that is, overlying major surface 21 of wafer 10 ), surface 4011 of frame portion 401 , and surface 4021 of frame portion 402 .
- carrier tape 301 and carrier tape 30 can be similar materials.
- carrier tape 301 can be a different material or can have different characteristics, such as adhesive and/or stretch characteristics, compared to carrier tape 30 .
- carrier tape 30 can be removed from wafer 10 and frame 40 to expose layer 28 and portions 280 .
- FIG. 8 illustrates a cross-sectional view of wafer 10 during subsequent processing.
- wafer 10 is placed again within apparatus 60 with layer 28 facing upward (or towards nozzle 61 ), and portions 280 of layer 28 can be removed using the fluid machining process as described previously.
- fluid 72 can be de-ionized water at a pressure from about 10,342 Kpa to about 20,684 Kpa (about 1500 psi to about 3000 psi) as measured at the fluid pump.
- Wafer 10 can be spinning at a rate from about 700 rpm to 1500 rpm with fluid 72 flowing onto wafer 10 from about 2 minutes to about 5 minutes.
- wafer 10 can be removed from apparatus 60 to provide the intermediate structure illustrated in FIG. 9 .
- FIG. 10 illustrates a cross-sectional view of wafer 10 during subsequent processing.
- carrier tape 301 can be exposed to a UV light source to reduce the adhesiveness of the tape.
- a carrier tape 302 can be applied or attached to layer 28 of wafer 10 , surface 4010 of frame portion 401 , and surface 4020 of frame portion 402 .
- carrier tape 302 , carrier tape 301 , and carrier tape 30 can be similar materials.
- carrier tape 302 can be a different material or can have different characteristics, such as adhesive and/or stretch characteristics, compared to carrier tape 30 and/or carrier tape 301 .
- carrier tape 301 can be removed from wafer 10 and frame 40 to expose conductive pads 24 overlying upper surface 21 of wafer 10 .
- die 12 , 14 , 16 , and 18 can be removed from carrier tape 302 as part of a further assembly process using, for example, a pick-and-place apparatus 81 as generally illustrated in FIG. 11 .
- carrier tape 302 can be exposed to a UV light source prior to the pick-and-place step to reduce the adhesiveness of the tape.
- FIG. 12 illustrates a cross-sectional view of wafer 10 after a singulation process in accordance with an alternative embodiment.
- Wafer 10 can be attached to carrier tape 30 , which is further attached to frame 40 as described previously in conjunction with FIG. 2 .
- carrier tape 301 can be applied or attached to contact pads 24 overlying upper surfaces of wafer 10 (that is, overlying major surface 21 of wafer 10 ), surface 4011 of frame portion 401 , and surface 4021 of frame portion 402 .
- carrier tape 30 can be removed from layer 28 , wafer 10 , and frame 40 to expose layer 28 as illustrated in FIG. 13 .
- carrier tape 30 can be exposed to a UV light source to reduce the tackiness of the tape prior to the application of carrier tape 301 .
- wafer 10 having layer 28 exposed or facing upward is then placed within apparatus 60 , and portions of layer 28 can be removed from singulation lines 13 , 15 , 17 , and 19 as illustrated in FIG. 14 .
- the following process conditions can be used to remove portions of layer 28 .
- fluid 72 can be de-ionized water at a pressure from about 10,342 Kpa to about 20,684 Kpa (about 1500 psi to about 3000 psi) as measured at the fluid pump.
- Wafer 10 can be spinning at a rate from about 700 rpm to 1500 rpm with fluid 72 flowing onto wafer 10 from about 2 minutes to about 5 minutes.
- FIG. 15 illustrates a cross-sectional view of wafer 10 after further processing.
- carrier tape 301 can be exposed to a UV light source to reduce the adhesiveness of the tape.
- carrier tape 302 can be applied or attached to layer 28 of wafer 10 , surface 4010 of frame portion 401 , and surface 4020 of frame portion 402 .
- carrier tape 301 can be removed from wafer 10 and frame 40 to expose conductive pads 24 overlying upper surface 21 of wafer 10 .
- die 12 , 14 , 16 , and 18 can be removed from carrier tape 302 using, for example, a pick-and-place apparatus 81 as generally illustrated in FIG. 11 .
- carrier tape 30 , 301 , and/or 302 can be stretched or expanded during the fluid machining process to further assist in the removal of unwanted material from within the singulation lines.
- apparatus 60 can include a megasonic apparatus to generate controlled acoustic cavitations in fluid 72 .
- fluid 72 can be heated or cooled.
- FIG. 16 illustrates a cross-section view of another embodiment.
- Wafer 10 on carrier substrate 10 can be placed in an apparatus 601 , which can be similar to apparatus 60 .
- layer 28 can be a wafer backside coating (WBC) film, such as a die attach coating.
- WBC wafer backside coating
- wafer 10 on carrier substrate 30 can be stretched to increase the distance between adjacent die.
- a work piece 96 can be used to stretch carrier substrate 30 .
- Work piece 96 can be, for example, an arched bar or a domed structure. The stretching can enhance removal of layer 28 from singulation lines 13 , 15 , 17 , and 19 using fluid 72 .
- wafer 10 can be cooled to a lower temperature to increase the brittleness of layer 28 .
- either fluid 72 or wafer 10 or both can be heated to enhance the removal of layer 28 .
- work piece 96 can move across wafer 10 when fluid 72 is flowing.
- work piece 96 and wafer 10 can spin (as generally represented by arrow 64 ) when fluid 72 is flowing.
- apparatus 601 can be used when reducing the presence of residual contaminants on semiconductor wafer 10 after singulation.
- a method of processing semiconductor die comprises providing a semiconductor wafer (for example, element 10 ) having a plurality of semiconductor die (for example, elements 12 , 14 , 16 , 18 ) formed on the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces (for example, elements 21 , 22 ).
- the method includes placing the semiconductor wafer onto a first carrier substrate (for example, element 30 ) and singulating the semiconductor wafer through the spaces to form singulation lines (for example, elements 13 , 15 , 17 , 19 ), and reducing the presence of residual contaminants from surfaces of the plurality of semiconductor die using a first fluid (for example, element 72 ).
- a first carrier substrate for example, element 30
- singulating the semiconductor wafer through the spaces to form singulation lines for example, elements 13 , 15 , 17 , 19
- a first fluid for example, element 72
- the method can include providing a layer of material (for example, element 28 ) along the second major surface, and placing the semiconductor wafer onto the first carrier substrate can include placing the layer of material adjacent the first carrier substrate.
- singulating the semiconductor wafer can include stopping in proximity to the layer of material.
- the method can further comprise removing at least portions of the layer of material from the singulation lines using a second fluid that is pressurized.
- the second fluid can be different than the first fluid.
- removing portions of the layer of material can include removing first portions of the layer of material using the second fluid while the layer of material is attached to the first carrier substrate, attaching a second carrier substrate to the first major surface of the semiconductor wafer, removing the first carrier substrate, and removing second portions of the layer of material using a third fluid.
- the third fluid can be pressurized.
- the method can further include attaching a third carrier substrate onto the second major surface after removing the second portions and removing the second carrier substrate.
- removing portions of the layer of material can include attaching a second carrier substrate to the first major surface of the semiconductor wafer, removing the first carrier substrate, and removing the portions of the layer of material from the singulation lines using the second fluid.
- reducing the presence of residual contaminants can include reducing the presence of polymer materials with a solvent.
- placing the semiconductor wafer onto the first carrier substrate comprises placing the semiconductor wafer onto a carrier tape.
- singulating the semiconductor wafer comprises plasma etching the semiconductor wafer.
- the method can further include stretching the first carrier substrate for at least some period of time applying the first fluid to the semiconductor wafer.
- the first fluid can be pressurized.
- the first fluid can be applied after the step of removing at least portions of the layer of material using the second fluid, and the first fluid can be applied from the same major surface where the layer of material is located.
- a method of singulating a substrate comprises providing a substrate (for example, element 10 ) having a plurality of die (for example, elements 12 , 14 , 16 , 18 ) formed on the substrate and separated from each other by spaces, wherein the substrate has first and second opposing major surfaces (for example, elements 21 , 22 ), and wherein a layer of material (for example, element 28 ) is formed overlying the second major surface.
- a substrate for example, element 10
- a plurality of die for example, elements 12 , 14 , 16 , 18
- the method includes placing a first carrier tape (for example, element 30 ) onto the layer of material; plasma etching the substrate through the spaces to form singulation lines (for example, elements 13 , 15 , 17 , 19 ), wherein the singulation lines terminate in proximity to the layer of material.
- the method includes removing at least portions of residual material from surfaces of the plurality of die using a first fluid (for example, element 72 ).
- the method includes removing portions of the layer of material from the singulation lines using a second fluid.
- the method can include exposing the plurality of die to a fluid configured to reduce the presence of polymer materials.
- using the second fluid can include using a pressurized fluid.
- using the first fluid can include using a pressurized fluid.
- the method can include exposing the plurality of die to a fluid configured to reduce the presence of fluorinated materials.
- a method of singulating semiconductor die from a semiconductor wafer comprises providing the semiconductor wafer (for example, element 10 ) having a plurality of semiconductor die (for example, elements 12 , 14 , 16 , 18 ) formed as part of the semiconductor wafer and separated from each other by spaces defining where singulation lines (for example, elements 13 , 15 , 17 , 19 ) will be formed, wherein the semiconductor wafer has first and second opposing major surfaces (for example, elements 21 , 22 ), and wherein a layer of material (for example, element 28 ) is formed overlying the second major surface.
- the method includes placing a first carrier substrate (for example, element 30 ) onto the layer of material.
- the method includes plasma etching the semiconductor wafer through the spaces to form the singulation lines while the semiconductor wafer is attached to the first carrier substrate, wherein the singulation lines terminate in proximity to the layer of material.
- the method includes exposing surfaces of the plurality of semiconductor die to a first fluid (for example, element 72 ) configured to reduce the presence of residual contamination.
- the method can include removing portions of the layer of material from the singulation lines. In another embodiment, removing portions of the layer of material can include exposing the layer of material to a second fluid that is pressurized. In one embodiment, the first and second fluids can be the same. In other embodiments, the first and second fluids can be different. In a further embodiment, the method can include stretching the first carrier tape during the step of exposing the surfaces of the semiconductor die.
- a method of singulating semiconductor die from a semiconductor wafer comprises providing a semiconductor wafer (for example, element 10 ) having a plurality of semiconductor die (for example, element 12 , 14 , 16 , 18 ) formed on the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces.
- the method includes placing the semiconductor wafer onto a carrier substrate (for example, element 30 ) and plasma etching the semiconductor wafer through the spaces to form the singulation lines (for example, element 13 , 15 , 17 , 19 ) while the semiconductor wafer is attached to the carrier substrate.
- the method includes exposing the plurality of semiconductor die to a means for reducing the presence of residual contaminants from surfaces of the plurality of semiconductor die (for example, element 72 ).
- exposing the plurality of semiconductor die can include removing at least portions of the residual contaminants with a fluid containing a solvent.
- the fluid can be pressurized.
- providing the semiconductor wafer can include providing a layer of material along the second major surface, and wherein placing the semiconductor wafer onto the carrier substrate can include placing the layer of material adjacent the carrier substrate.
- singulating the semiconductor wafer can include stopping in proximity to the layer of material.
- the method can further include removing at least portions of the layer of material from the singulation lines using a pressured fluid.
- a novel method is disclosed. Included, among other features, is placing a semiconductor wafer having a plurality of die onto a carrier tape, and forming singulation lines through the substrate to separate at least in part the plurality of die.
- the method includes exposing surfaces of the plurality of die to pressurized fluid to reduce the presence of residual contamination from the singulation process. The method improves the reliability and quality of the singulated die.
- inventive aspects may lie in less than all features of a single foregoing disclosed embodiment.
- inventive aspects may lie in less than all features of a single foregoing disclosed embodiment.
- the hereinafter expressed claims are hereby expressly incorporated into this Detailed Description of the Drawings, with each claim standing on its own as a separate embodiment of the invention.
- some embodiments described herein include some but not other features included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the invention and meant to form different embodiments as would be understood by those skilled in the art.
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Abstract
Description
Claims (20)
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US15/255,503 US10026605B2 (en) | 2014-06-04 | 2016-09-02 | Method of reducing residual contamination in singulated semiconductor die |
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PH12015000096A1 (en) | 2016-10-17 |
CN105280473A (en) | 2016-01-27 |
PH12015000096B1 (en) | 2016-10-17 |
MY191396A (en) | 2022-06-23 |
US20160372323A1 (en) | 2016-12-22 |
US20150357241A1 (en) | 2015-12-10 |
CN105280473B (en) | 2020-05-19 |
MY171178A (en) | 2019-09-30 |
US10026605B2 (en) | 2018-07-17 |
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