US9190391B2 - Three-dimensional chip-to-wafer integration - Google Patents
Three-dimensional chip-to-wafer integration Download PDFInfo
- Publication number
- US9190391B2 US9190391B2 US13/281,534 US201113281534A US9190391B2 US 9190391 B2 US9190391 B2 US 9190391B2 US 201113281534 A US201113281534 A US 201113281534A US 9190391 B2 US9190391 B2 US 9190391B2
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- die
- semiconductor substrate
- wafer
- overmold
- semiconductor device
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Definitions
- a Three-Dimensional Integrated Circuit (3D IC) can be constructed using two or more layers of electronic components integrated into a single IC chip.
- the electronic components may be stacked to form a single electrical circuit.
- vertical Through-Silicon Via (TSV) connections are used to connect to the electronic components of the 3D IC.
- TSV connections may require redesigning each die that is stacked below another die in order to connect to the lower die with a TSV.
- through-mold solder connections such as Through-Mold Via (TMV) connections, use solder balls to furnish interconnection between a Printed Circuit Board (PCB) and the top side of a molding compound.
- TSV Through-Mold Via
- An integrated circuit device includes a semiconductor substrate and a die attached to the semiconductor substrate.
- An overmold is molded onto the semiconductor substrate over the die.
- a conductive pillar is connected to at least one of the semiconductor substrate or the die and extends through the overmold.
- the semiconductor substrate may comprise a second die.
- the conductive pillar may be formed on the die and/or the second die.
- the overmold may be used to mold the first die onto the second die, so that the conductive pillar extends through the overmold.
- the semiconductor substrate may comprise a carrier.
- the overmold may be used to mold the die onto the carrier, so that the conductive pillar extends through the overmold.
- FIG. 1A is a diagrammatic partial cross-sectional side elevation view illustrating an integrated circuit device including a die embedded in an overmold molded onto a semiconductor wafer over the die, where the die is arranged in a face-down orientation in accordance with an example implementation of the present disclosure.
- FIG. 1B is a diagrammatic partial cross-sectional side elevation view illustrating an integrated circuit device including a die embedded in an overmold molded onto a semiconductor wafer over the die, where the die is arranged in a face-up orientation in accordance with an example implementation of the present disclosure.
- FIG. 1C is a diagrammatic partial cross-sectional side elevation view illustrating an integrated circuit device including a die embedded in an overmold molded onto a sacrificial wafer over the die, where the die is arranged in a face-up orientation in accordance with an example implementation of the present disclosure.
- FIG. 2 is a diagrammatic partial cross-sectional side elevation view illustrating an integrated circuit device including a first die embedded in an overmold molded onto a semiconductor wafer over the first die, where the first die is arranged in a face-down orientation, and further including a second die embedded in the overmold molded onto the semiconductor wafer, where the second die is arranged in a face-up orientation in accordance with an example implementation of the present disclosure.
- FIG. 3 is a diagrammatic cross-sectional side elevation view illustrating an integrated circuit device including a first die embedded in an overmold molded onto a semiconductor wafer over the first die, where the first die is arranged in a face-down orientation, and further including a second die embedded in the overmold molded onto the semiconductor wafer, where the second die is arranged in a face-up orientation in accordance with an example implementation of the present disclosure.
- FIG. 4 is a diagrammatic cross-sectional side elevation view illustrating an integrated circuit device including a first die embedded in an overmold molded onto a semiconductor wafer over the first die, where the first die is arranged in a face-up orientation, and further including a second die embedded in the overmold molded onto the semiconductor wafer, where the second die is arranged in a face-up orientation in accordance with an example implementation of the present disclosure.
- FIG. 5 is a diagrammatic cross-sectional side elevation view illustrating an integrated circuit device including a first die embedded in an overmold molded onto a semiconductor wafer over the first die, where the first die is arranged in a face-down orientation, and further including a second die embedded in the overmold and molded onto a die attach pad of the first die in a face-up orientation in accordance with an example implementation of the present disclosure.
- FIG. 6 is a diagrammatic cross-sectional side elevation view illustrating an integrated circuit device including a die embedded in an overmold molded onto a semiconductor wafer over the die, where the die is arranged in a face-down orientation, and where the integrated circuit device includes an external thermal heat sink in accordance with an example implementation of the present disclosure.
- FIG. 7 is a flow diagram illustrating a method of forming a 3D semiconductor chip package including one or more dies connected with conductive pillars, where the chip package is formed by molding a die to a semiconductor substrate using an overmold.
- a 3D IC can be constructed using two or more layers of electronic components integrated into a single IC chip.
- the electronic components may be stacked to form a single electrical circuit.
- vertical TSVs are used to connect to the electronic components of the 3D IC.
- TMVs through mold solder connections, such as TMVs, use solder balls to interconnect between a PCB and the top side of a molding compound.
- this type of configuration limits the minimum possible spacing between connections to the PCB as determined by the sizes and spacing requirements of the solder balls.
- 3D IC's can be constructed using an molded epoxy wafer onto which two or more dies can be placed.
- a semiconductor die such as a silicon die
- CTE Coefficient of Thermal Expansion
- the thickness of the molding compound used to overmold the die to the wafer may need to be substantial to prevent warping of the resulting IC chip.
- the final package footprint/form factor for this type of configuration will always be larger than the largest die.
- a three-dimensional (3D) semiconductor chip package uses pillars formed of conductive material to connect to a die embedded in an overmold.
- the conductive pillars allow connections to the die to be arranged differently than the arrangement of the die (e.g., fanned out) without requiring re-design/re-layout of the die, and may also allow for a fine pitch between connections to the die.
- the die can be attached to a live silicon wafer, such that the resulting footprint/form factor of the chip package is the same as that of the underlying die when singulated from the wafer.
- the semiconductor chip package can be formed by securing a silicon die to a silicon substrate, such as a silicon wafer, using an overmold.
- the conductive pillars extending through the overmold can be connected to the dies and/or the substrate. Connections to the dies and/or the substrate can also be provided using TSV connections and/or TMV connections.
- the substrate may include electrical circuitry connected to one or more of the dies.
- the substrate may be a sacrificial (dummy) carrier, such as a silicon carrier wafer (e.g., for implementing a fan-out type configuration).
- the die may be attached to the substrate in a face-up orientation. In other configurations, the die may be attached to the substrate in a face-down orientation.
- the conductive pillars may furnish electrical connection to the die and/or the substrate (e.g., for transferring electrical signals to and/or from the die or the substrate). The conductive pillars may also be used for thermal management of the semiconductor chip package.
- the conductive pillars may be thermally connected to a heat sink, a thermal pad, and so forth for transferring heat from the dies and/or the wafer.
- the 3D chip package can be used for devices that may require 3D heterogeneous die integration, such as power System on a Chip (SoC) devices, handheld devices, mobile phone devices, and/or portable electronic devices.
- SoC System on a Chip
- a 3D semiconductor chip package including one or more dies connected with conductive pillars may be formed in a Wafer Level Packaging (WLP) process by placing one or more dies on a semiconductor substrate, forming conductive pillars on the one or more dies and/or the semiconductor substrate, and molding the one or more dies onto the semiconductor substrate using an overmold.
- the surface of the overmold may be planarized (e.g., depending upon the molding process).
- the semiconductor substrate may comprise a sacrificial carrier, which may be thinned via back grinding and so forth to reduce the thickness of the chip package.
- a first die may be placed on a second die.
- a conductive pillar may be formed on the first die and/or the second die.
- An overmold may be used to mold the first die onto the second die, so that the conductive pillar extends through the overmold.
- a die may be placed on a carrier.
- a conductive pillar may be formed on the die.
- An overmold may be used to mold the die onto the carrier, so that the conductive pillar extends through the overmold.
- a semiconductor substrate refers to substrates constructed of materials such as, but not limited to: silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide (GaAs), alloys of silicon and germanium, and/or indium phosphide (InP).
- a semiconductor substrate can be formed as a semiconductor or an electrical insulator, and may include layers of both semiconducting and insulating material.
- a semiconductor substrate can be formed using an insulator, such as silicon oxide, with a layer of semiconducting material, such as silicon formed thereupon. Electrical components, such as transistors and diodes, can be fabricated in the semiconductor.
- the semiconductor substrate can be formed as an insulator, a dielectric, and so forth.
- FIGS. 1 through 6 illustrate 3D semiconductor chip packages including one or more dies connected with conductive pillars in accordance with example implementations of the present disclosure.
- a semiconductor chip package can be formed using chip-to-wafer (C2W) stacking by molding a small silicon die onto a larger silicon substrate using an overmold.
- C2W chip-to-wafer
- FIGS. 1A through 6 a semiconductor device comprising a chip package 100 is described.
- the chip package 100 includes one or more dies 102 molded onto a semiconductor substrate, such as a wafer 104 , using an overmold, such as a mold compound 106 .
- Examples of a die 102 include, but are not necessarily limited to: a semiconductor die (e.g., a silicon die), a MicroElectroMechanical Systems (MEMS) die, and a passive die (e.g., a passive glass die). Connections are provided to the dies 102 and/or the wafer 104 using pillars 108 formed of conductive material (e.g., copper, gold, and so forth), which extend through the mold compound 106 .
- the pillars 108 can be electrically and/or thermally connected to integrated circuits provided with the dies 102 and/or the wafer 104 .
- the pillars 108 can be connected to the die 102 to provide effective thermal management of a 3D package. Connections to the dies 102 and/or the wafer 104 can also be provided using TSV connections and/or TMV connections.
- one or more of the dies 102 and the wafer 104 may be formed from the same type of substrate material to reduce warping.
- the dies 102 and the wafer 104 may be formed using a silicon substrate.
- each die 102 can be about one hundred micrometers (100 ⁇ m) thick, while the mold compound 106 can be about three hundred micrometers (300 ⁇ m) thick, and the wafer 104 can be about seven hundred micrometers (700 ⁇ m) thick. It should be noted that these thicknesses are provided by way of example only and are not meant to be restrictive of the present disclosure.
- the chip package 100 may include dies 102 , wafers 104 , and/or mold compounds 106 having other various thicknesses.
- the wafer 104 may include electrical circuitry, such as transistors and so forth, which may be connected to one or more of the dies 102 .
- the wafer 104 may be singulated into individual semiconductor dies.
- the wafer 104 may be a sacrificial (dummy) carrier, such as a silicon carrier wafer, where some or all of the carrier wafer can be removed after the dies 102 have been molded to the wafer 104 .
- the die 102 can be attached to the wafer 104 such that the top die is in a face-down orientation (i.e., connections to the top die are facing “down,” i.e., toward the wafer 104 ). In other embodiments (e.g., as illustrated in FIGS. 1B and 1C ), the die 102 can be attached to the wafer 104 such that the top die is in a face-up orientation (i.e., connections to the top die are facing “up,” i.e., away from the wafer 104 ).
- the die 102 can be connected to the wafer 104 using a die attach pad 110 (e.g., as illustrated in FIG. 1B ). Further, in a face-up implementation, the connections to the die 102 can be arranged or rearranged to fan-out (e.g., to provide more spacing between the connections, as illustrated in FIG. 1C ). This may be particularly useful as dies become smaller through increased miniaturization. For example, a die having a footprint of three millimeters by three millimeters (3 mm ⁇ 3 mm) but requiring a five tenths millimeter (0.5 mm) pitch between connections may require a fan-out to achieve the desired pitch when multiple connection pads are present on the die.
- More than one die 102 can be included with the chip package 100 .
- two dies 102 can be provided in a side-by-side configuration (e.g., as illustrated in FIGS. 1A through 4 ).
- a die 102 arranged in a face-up orientation can be included in a side-by-side configuration in the same chip package 100 with a die arranged in a face-down orientation (e.g., as illustrated in FIGS. 2 and 3 ).
- one or more dies 102 may be connected to circuitry included on the wafer 104 , while one or more other dies 102 may use the wafer 104 as a dummy wafer (e.g., as illustrated in FIGS. 3 and 4 ).
- two or more dies 102 can be stacked on top of one another, and connected to the wafer 104 (e.g., as illustrated in FIG. 5 ).
- the die 102 and the wafer 104 can be heterogeneous.
- the die 102 can be a digital or passive component
- the wafer 104 can include an analog component, such as an analog System of a Chip (SoC), and so forth.
- SoC System of a Chip
- this configuration is provided by way of example only and is not meant to be restrictive of the present disclosure.
- other configurations can use other arrangements of digital and/or analog components in heterogeneous and homogeneous configurations.
- the die 102 can be an analog component
- the wafer 104 can include a digital component.
- the pillars 108 may be used for thermal management of the chip package 100 .
- the pillars 108 can be thermally connected to a heat sink (e.g., an external heat sink 112 , as illustrated in FIG. 6 ), a thermal pad, and so forth for transferring heat from the dies 102 and/or the wafer 104 .
- a heat sink e.g., an external heat sink 112 , as illustrated in FIG. 6
- solder balls 118 are connected to pillars 108 , which are connected to wafer 104 , which is connected to heat sink 112 . In this manner, a continuous path for heat dissipation is provided from the die 102 to the wafer 104 .
- FIG. 7 depicts a process 700 , in an example implementation, for fabricating a semiconductor device, such as the example chip packages 100 illustrated in FIGS. 1A through 6 and described above.
- conductive pillars are formed on the die and/or the semiconductor substrate (Block 710 ).
- pillars 108 such as fine pitch pillars comprising copper or another conductive material, are formed on dies 102 and/or wafer 104 .
- the pillars 108 can be formed with a dry film photo process and may be as wide as about fifty micrometers (50 ⁇ m) and as thick as about one hundred fifty micrometers (150 ⁇ m), having a three-to-one (3:1) aspect ratio. In other embodiments, the height of the pillars 108 can be as much as about two hundred micrometers (200 ⁇ m) (e.g., using a thicker dry film photo process to form the pillars 108 ).
- the dry film photo process may include forming a seed layer of a conductive material, such as copper, on the die 102 and/or the wafer 104 . Then, a dry film may be laminated onto the seed layer.
- a negative photoresist process may be used to photoexpose the shapes of the pillars 108 into the dry film and create holes to the seed layer.
- the pillars 108 may be electroplated from the bottom up by depositing the conductive material in the holes in the dry film.
- the dry film photo process is provided by way of example only and is not meant to be restrictive of the present disclosure.
- the pillars 108 may be formed using other fabrication techniques, conductive materials, and so forth.
- the pillars 108 may be formed on the dies 102 and/or the wafer 104 when the dies 102 and/or the wafer 104 are on a contiguous wafer.
- the pillars 108 may be formed on a wafer including the die 102 , which may then be thinned down and diced (singulated).
- One or more dies are next placed on a semiconductor substrate, such as a wafer (Block 710 ).
- a pick and place tool may be used to place dies 102 on wafer 104 .
- the die 102 can be attached to the wafer using epoxy glue.
- the dies 102 can be placed on the wafer 104 in a face down orientation. In this type of configuration, the die 102 can be connected to the wafer 104 using solder balls 114 , and so forth. In other embodiments, the die 102 can be placed on the wafer 104 in a face up orientation.
- the die 102 can be connected to the wafer 104 using a die attach pad 110 , and so forth. It should be noted that in this type of configuration, solder balls, copper pillars, and so forth may be formed on the wafer 104 and used to align the die 102 on the wafer 104 . In some instances, a die 102 can be thinned prior to molding the die 102 to the wafer 104 (e.g., using a back grind tool).
- die 102 can be embedded in mold compound 106 by molding the mold compound 106 onto wafer 104 over the die 102 .
- the mold compound 106 may comprise a liquid or power material, such as an epoxy material, a resin based material, and/or a thermoplastic elastomer material.
- an epoxy backbone can be used with a spherical epoxy filler material.
- the mold compound 106 may be selected based upon characteristics including, but not limited to: Coefficient of Thermal Expansion (CTE), flex modulus, and/or particle size.
- CTE Coefficient of Thermal Expansion
- flex modulus flex modulus
- a mold compound 106 may be selected to provide a desired filling capability for permeating between the pillars 108 . Further, the mold compound 106 may be configured to permeate between the die 102 and the wafer 104 (e.g., in the manner of an under fill having a high filler content and small particle size in comparison to the over molding material). For example, when the spacing between the die 102 and the wafer 104 is between about forty micrometers and sixty micrometers (40 ⁇ m-60 ⁇ m), capillary action may be used to draw the mold compound 106 into the space between the die 102 and the wafer 104 .
- a transfer molding process can be used with the mold compound 106 .
- a liquid mold compound 106 may be used to form the overmold.
- a compression molding process can be used with the mold compound 106 .
- a granular mold compound 106 is placed in a compression mold cavity, pressure is applied to the mold compound 106 , and then heat and pressure are maintained until the molding material has cured.
- the thickness of the mold compound 106 may be selected to prevent or minimize the effects of pressure upon the pillars 108 .
- the thickness of the mold compound 106 can be selected to be greater than the height of the pillars 108 .
- the thickness of the mold compound 106 may be equal to or less than the height of the pillars 108 .
- planarization may be used to flatten the surface of the overmold (Block 732 ). For example, when mold compound 106 is molded using a transfer molding process, face grinding can be used to flatten the mold compound 106 and expose pillars 108 .
- redistribution layer 116 can be applied on mold compound 106 .
- other material may be deposited on the mold compound 106 in addition to the redistribution layer 116 .
- lead oxide and/or low temperature polyimide may be used to provide Under Bump Metallization (UBM).
- UBM Under Bump Metallization
- multiple RDL's may be formed on the mold compound 106 .
- the chip package 100 does not necessarily include an RDL (e.g., when a die is placed on a semiconductor substrate in a face-down orientation).
- solder bumps may be formed on the redistribution layer (Block 750 ).
- external solder bumps 118 are applied to redistribution layer 116 .
- the semiconductor substrate may be thinned to reduce the overall thickness of the chip package (Block 760 ).
- the wafer 104 can be thinned using back grinding and so forth.
- the semiconductor substrate may be singulated to provide individual integrated circuit devices (Block 770 ).
- wafer 104 can be singulated to provide individual chip packages 100 .
- a heat sink can be connected to a silicon surface of the chip package 100 .
- heat sink 112 can be connected to a bottom side of the wafer 104 (i.e., a side opposite the die 102 ).
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
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US14/942,708 US10032749B2 (en) | 2011-10-26 | 2015-11-16 | Three-dimensional chip-to-wafer integration |
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US10811394B2 (en) | 2016-01-06 | 2020-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices employing thermal and mechanical enhanced layers and methods of forming same |
US11469218B2 (en) | 2016-01-06 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices employing thermal and mechanical enhanced layers and methods of forming same |
US9978694B2 (en) | 2016-09-05 | 2018-05-22 | Samsung Electronics Co., Ltd. | Semiconductor package and method of fabricating the same |
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US10032749B2 (en) | 2018-07-24 |
US20160071826A1 (en) | 2016-03-10 |
CN103077933A (en) | 2013-05-01 |
CN103077933B (en) | 2018-02-16 |
US20130105966A1 (en) | 2013-05-02 |
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