US9134256B2 - Metrology method and apparatus, lithographic system and device manufacturing method - Google Patents
Metrology method and apparatus, lithographic system and device manufacturing method Download PDFInfo
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- US9134256B2 US9134256B2 US13/799,673 US201313799673A US9134256B2 US 9134256 B2 US9134256 B2 US 9134256B2 US 201313799673 A US201313799673 A US 201313799673A US 9134256 B2 US9134256 B2 US 9134256B2
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- United States
- Prior art keywords
- asymmetry
- targets
- overlay
- overlay error
- target
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
ΔI + =K 0 +K 1·sin(ov+d)
ΔI 0 =K 0 +K 1·sin(ov)
ΔI − =K 0 +K 1·sin(ov−d)
where ΔI is the intensity difference representing the measured asymmetry and the suffix ‘+’, ‘0’ or ‘−’ indicates the bias.
ΔI −d−Δd =K 0 +K 1·sin(ov−d−Δd)
ΔI −d+Δd =K 0 +K 1·sin(ov−d+Δd)
ΔI +d−Δd =K 0 +K 1·sin(ov+d−Δd)
ΔI +d+Δd =K 0 +K 1·sin(ov+d+Δd)
ΔI −d−Δd =K 0 +K 1·sin(ov−d−Δd)+K 2·sin(2·(ov−d−Δd))
ΔI −d+Δd =K 0 +K 1·sin(ov−d+Δd)+K 2·sin(2·(ov−d+Δd))
ΔI +d−Δd =K 0 +K 1·sin(ov+d−Δd)+K 2·sin(2·(ov+d−Δd))
ΔI +d+Δd =K 0 +K 1·sin(ov+d+Δd)+K 2·sin(2·(ov+d+Δd))
Claims (17)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US13/799,673 US9134256B2 (en) | 2012-03-27 | 2013-03-13 | Metrology method and apparatus, lithographic system and device manufacturing method |
US14/825,751 US9719945B2 (en) | 2012-03-27 | 2015-08-13 | Metrology method and apparatus, lithographic system and device manufacturing method |
Applications Claiming Priority (2)
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US201261616398P | 2012-03-27 | 2012-03-27 | |
US13/799,673 US9134256B2 (en) | 2012-03-27 | 2013-03-13 | Metrology method and apparatus, lithographic system and device manufacturing method |
Related Child Applications (1)
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US14/825,751 Division US9719945B2 (en) | 2012-03-27 | 2015-08-13 | Metrology method and apparatus, lithographic system and device manufacturing method |
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US20130258310A1 US20130258310A1 (en) | 2013-10-03 |
US9134256B2 true US9134256B2 (en) | 2015-09-15 |
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US13/799,673 Active 2033-09-17 US9134256B2 (en) | 2012-03-27 | 2013-03-13 | Metrology method and apparatus, lithographic system and device manufacturing method |
US14/825,751 Active US9719945B2 (en) | 2012-03-27 | 2015-08-13 | Metrology method and apparatus, lithographic system and device manufacturing method |
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US14/825,751 Active US9719945B2 (en) | 2012-03-27 | 2015-08-13 | Metrology method and apparatus, lithographic system and device manufacturing method |
Country Status (5)
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US (2) | US9134256B2 (en) |
KR (1) | KR101761735B1 (en) |
IL (1) | IL234539B (en) |
NL (1) | NL2010401A (en) |
WO (1) | WO2013143814A1 (en) |
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Also Published As
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KR101761735B1 (en) | 2017-07-26 |
KR20140139080A (en) | 2014-12-04 |
US9719945B2 (en) | 2017-08-01 |
IL234539B (en) | 2019-05-30 |
US20150346116A1 (en) | 2015-12-03 |
WO2013143814A1 (en) | 2013-10-03 |
NL2010401A (en) | 2013-09-30 |
US20130258310A1 (en) | 2013-10-03 |
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