US9029840B2 - Organic nanofiber structure based on self-assembled organogel, organic nanofiber transistor using the same, and method of manufacturing the organic nanofiber transistor - Google Patents
Organic nanofiber structure based on self-assembled organogel, organic nanofiber transistor using the same, and method of manufacturing the organic nanofiber transistor Download PDFInfo
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- US9029840B2 US9029840B2 US13/671,060 US201213671060A US9029840B2 US 9029840 B2 US9029840 B2 US 9029840B2 US 201213671060 A US201213671060 A US 201213671060A US 9029840 B2 US9029840 B2 US 9029840B2
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- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
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- C07C15/56—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts substituted by unsaturated carbon radicals polycyclic condensed
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
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- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
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- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
- C07C2603/22—Ortho- or ortho- and peri-condensed systems containing three rings containing only six-membered rings
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Definitions
- One or more embodiments relate to an organic nanofiber structure based on a self-assembled organogel, an organic nanofiber transistor using the same and a method of manufacturing the organic nanofiber transistor.
- the organic nanofiber structure and the organic nanofiber transistor can be used to manufacture various flexible high performance electronic devices at low cost.
- TFTs thin film transistors
- organic TFTs include a substrate, a gate electrode, an insulating layer, source and drain electrodes, and a channel layer.
- the organic TFTs can be classified as a bottom contact organic thin film transistor, in which a channel layer is formed on the source and drain electrodes, or as a top contact organic thin film transistor, in which metal electrodes are formed on a channel layer using mask deposition.
- Performance of organic thin film transistors may be influenced by field-effect mobility (carrier mobility) and on/off ratio (on/off current ratio).
- carrier mobility may vary according to the type of semiconductor, method of forming the thin films (which affects their structure and morphology), the driving voltage and the like.
- transistors may have relatively high carrier mobility and excellent on/off ratio.
- an expensive vacuum deposition device may be required, and micropatterns may difficult to form. Accordingly, costs for manufacturing organic thin film transistors may be impractical and large area thin films may be difficult to manufacture. Furthermore, stability may be reduced during electrochemical processes.
- the resulting organic thin film transistor may have a disordered intermolecular arrangement and thus well-ordered thin films may be difficult to obtain.
- carrier mobility decreases and current leakage on cut off increases, and thus the organic thin film transistor may not be suitable for practical application in an electronic device.
- one dimensional (“1D”) nano- and micro-structures of organic semiconductors have become of great interest for application in solution processable organic transistors.
- the self-assembly of a 1D structure of ⁇ -conjugated molecules can provide not only well-ordered molecular ordering, but also lack grain boundaries within active layers in organic thin film transistors (“OTFTs”).
- One or more embodiments include an organic nanofiber.
- One or more embodiments include an organic nanofiber transistor.
- One or more embodiments include a method of manufacturing the organic nanofiber transistor.
- an embodiment includes an organic nanofiber including a gelated organic semiconductor compound.
- an embodiment includes a method of manufacturing an organic semiconductor transistor, the method includes gelating an organic semiconductor compound, to form a self-assembled structure in an organic solvent; and disposing the self-assembled structure onto a substrate comprising a source electrode and a drain electrode that are insulted from each other, to form a channel layer that electrically connects the source electrode and the drain electrode.
- an embodiment includes an organic semiconductor transistor including: a substrate; a gate electrode; a source electrode and a drain electrode, which are insulated from the gate electrode; an organic semiconductor layer, which is insulated from the gate electrode and electrically connected to the source and the drain electrodes; and an insulating layer, which insulates the gate electrode from the source and drain electrodes and the organic semiconductor layer, wherein an organic nanofiber including a gelated organic semiconductor compound is disposed on the organic semiconductor layer.
- FIG. 1 is a graph of weight percent (“%”) versus temperature (degrees centigrade, “° C.”) illustrating thermogravimetric analysis (“TGA”) results for dodecane substituted 2,6-bis(2-thienylvinyl)anthracene (“DOTVAnt”);
- FIG. 3 is (a) a photographic image of DOTVAnt (1.0 weight/volume percent, “wt/vol %”) dissolved in dimethyl sulfoxide (“DMSO”) (left vial), the corresponding organogel at room temperature (middle vial), and a dilute dispersion of DOTVAnt xerogel in chloroform, and (b) a scanning electron microscopic (“SEM”) image of dried DOTVAnt xerogel;
- DMSO dimethyl sulfoxide
- FIG. 4 is a graph illustrating an X-ray diffraction (“XRD”) pattern of DOTVAnt xerogel in a graph of counts versus degrees two-theta (“2 ⁇ ”), and the inset graph shows an enlarged part of the pattern ranging from 5° to 30° 2 ⁇ ;
- XRD X-ray diffraction
- FIG. 10 illustrates a high mobility (up to 8.7 square centimeters per volt seconds, “cm 2 /Vs”) obtained from a nanofiber with a width of 70 nanometers (“nm”), including a graph of the square root of source-drain current and source-drain current versus gate voltage.
- first, second, third, etc. can be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the exemplary embodiments of the invention.
- spatially relative terms such as “below,” “lower,” “upper” and the like, can be used herein for ease of description to describe one element or features relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “lower” relative to other elements or features would then be oriented “above” relative to the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
- 1D alignment of a rigid ⁇ -conjugated vinylene-based anthracene through a gelation processes is disclosed.
- a nanofiber derived from an organogel, successfully incorporated as an individual charge transport layer with a high electric field-effect mobility, about 0.48 cm 2 /V ⁇ s, and an on/off ratio of about 10 5 in a single nanofiber transistor.
- a 1 is a C 10 -C 20 arylene group or a C 10 -C 20 heteroarylene group
- a 2 and A 3 are each independently a C 6 -C 20 arylene group or C 2 -C 20 heteroarylene group
- I is 0 or 1
- m is in a range of about 1 to about 10, specifically in a range of about 1 to about 5, more specifically about 3
- n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12.
- An arylene group is a bivalent aromatic ring system capable of having at least two rings, wherein the at least two rings may be connected or fused to each other.
- a heteroarylene group is a bivalent group in which at least one carbon atom of the arylene group is substituted with at least one atom selected from the group consisting of N, O, S and P.
- a 1 may be an anthracenylene group, a benzothieno benzothiophenylene group, a thiophenylene group, a naphthylene group, a phenylene group or a combination comprising at least one of the foregoing.
- a 2 and A 3 may be each independently a phenylene group, a naphthylene group, an anthracenylene group, a thiophenylene group, a benzothieno benzothiophenylene group or a combination comprising at least one of the foregoing.
- n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
- n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
- n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
- n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
- n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12 and
- n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12 or a combination comprising at least one of the foregoing.
- a method of manufacturing an organic semiconductor transistor includes forming an organic nanofiber by gelating an organic semiconductor compound to form a self-assembled structure in an organic solvent; and forming a channel layer, which electrically connects a source electrode and a drain electrode, by disposing an organogel organic nanofiber in an organogel on a substrate, on which a source electrode and a drain electrode are disposed, wherein the source electrode and the drain electrode are insulated each other.
- the organic semiconductor transistor may be fabricated in bottom contact geometry, wherein the channel layer is formed on the source and drain electrodes.
- the organic nanofiber may be prepared by adding an organic compound represented by a formula selected from the group consisting of Formulae 1 to 12 to an organic solvent.
- the organic solvent may be a polar organic solvent, for example DMSO.
- One-dimensional (1D) alignment of a gelator, by formation of an organogel may be driven by specific interactions, such as hydrogen bonding, van der Waals interactions, ⁇ - ⁇ stacking, and electrostatic interactions.
- Rigid thienylvinylene anthracene may be selected as a backbone because it can form strong ⁇ - ⁇ stacks and provide 1D aggregation.
- An embodiment is described with reference to the synthesis of 2,6-bis(2-thienylvinyl)anthracene (“TVAnt”) substituted with dodecane (“DOTVAnt”).
- R of the last organic semiconductor compound is an alkyl group.
- each R may independently have between about 1 and about 50 carbon atoms, specifically between about 2 and about 40 carbon atoms, more specifically about 20 carbon atoms.
- R is a dodecyl group
- the compound is DOTVAnt. Long alkyl chains may improve gelation capability.
- a vinyl group is formed by the reaction between a phosphonate group and an aldehyde group in the last reaction of the scheme. Strong ⁇ - ⁇ stacking interactions between an anthracene backbone and vinyl groups may improve gelation capability.
- various organic semiconductor compounds having excellent gelation capability may be prepared by introducing an aldehyde derivative.
- the alkyl chain of each R group may independently be a C 10 to C 16 group when n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12, although gelation capability may vary according to the number of carbon atoms.
- the substituent is not limited thereto.
- FIG. 1 is a graph illustrating thermogravimetric analysis (“TGA”) results of DOTVAnt.
- TGA thermogravimetric analysis
- the TGA analysis was performed using a TGA Q50 TA instrument at 10 degrees centigrade per minute (“° C. ⁇ min ⁇ 1 ”) under a nitrogen atmosphere.
- DOTVAnt has thermal stability greater than that of pentacene, which is thermally decomposed at 260 ° C.
- FIG. 2A is a graph illustrating UV-vis absorption spectra of DOTVAnt.
- FIG. 2B is a graph illustrating a cyclic voltammogram of DOTVAnt.
- DOTVAnt has greater oxidative stability than pentacene.
- the gelation capability of the DOTVAnt may be measured by dissolving the DOTVAnt in various solvents.
- DOTVAnt (10 milligrams, “mg”) is added to DMSO (1 milliliter, “mL”), and the mixture is refluxed until the DOTVAnt is dissolved to prepare an organogel.
- FIG. 3 is a photographic image of DOTVAnt (1.0 weight/volume percent, “wt/vol %”, determined as grams DOTVnt per 100 mL of solution) dissolved in DMSO (left vial), the corresponding organogel at room temperature (middle vial), and dilute dispersion of DOTVAnt xerogel in chloroform (right vial).
- FIG. 3 is a scanning electron microscopic (“SEM”) image of dried DOTVAnt xerogel. Images (a) and (b) of FIG. 3 show well-dispersed characteristics of DOTVAnt in chloroform. In order to observe the morphology of DOTVAnt gelator in the organogel, the dried gel (xerogel) was analyzed using SEM. Referring to (b) of FIG. 3 , three dimensional fibrous network structures of DOTVAnt gelator are formed using a gelation process. Such gelation capability of DOTVAnt shows that the driving force is derived from a strong ⁇ - ⁇ stacking interaction of thienylvinylene anthracene backbones and van der Waals interactions between the long alkyl chains.
- FIG. 4 is a graph illustrating an X-ray diffraction (“XRD”) pattern of DOTVAnt xerogel.
- XRD X-ray diffraction
- the inset graph shows the enlarged part of the pattern ranging from 5° to 30° two-theta.
- Sharp XRD peaks indicate that DOTAnt xerogel has a highly ordered crystalline structure.
- Inherent dimensions of DOTVAnt fibers are determined by SEM and atomic force microscopy (“AFM”).
- AFM atomic force microscopy
- belt-like microstructures of DOTVAnt gelator are obtained in the organogel by using 2-ethoxyethanol as a solvent.
- 1D micro/nanostructures of DOTVAnt gelators in organogel may be formed using a polar organic solvent, such as DMSO, 2-ethoxyethanol, or the like or a combination comprising at least one of the foregoing.
- a polar organic solvent such as DMSO, 2-ethoxyethanol, or the like or a combination comprising at least one of the foregoing.
- the morphology of some different microstructures is obtained using a nonpolar solvent without organogel formation.
- Images (a) to (d) of FIG. 5 illustrate SEM images of DOTVAnt in different solvents. Nanofibers (or nanowires) are observed when using DMSO, and belt-like structures are observed when using 2-ethoxyethanol. Nano- and micro-structures may be formed in polar solvents by gelation.
- the DOTVAnt film is used as an active channel layer. Since DOTVAnt molecules are not soluble or have limited solubility in any other solvents, they may be dissolved in toluene by heating the solvent. Electrical characteristics of organic thin film transistors (“OTFTs”) based on DOTVAnt films exhibit p-type characteristics with an estimated hole mobility in a range of about 0.02 to about 0.05 square centimeters per volt seconds (“cm 2 /V ⁇ s”) in the saturation region.
- FIG. 6 is a series of graphs illustrating electrical characteristics of OTFTs based on DOTVAnt films via existing solution processes.
- DOTVAnt transistor based on individual nanofibers is prepared.
- DOTVAnt gel (xerogels) dispersed in chloroform is spin-coated on Cr/Au (2 nanometer, “nm”/40 nm thickness, respectively) electrodes, which are pre-patterned on a hexamethyldisilazane (“HMDS”)-treated SiO 2 /Si substrate.
- FIG. 7A is a schematic view of a DOTVAnt transistor from an individual nanofiber.
- FIG. 7B is a SEM image of a bottom-contact single nanofiber transistor of DOTVAnt.
- FIG. 7C is an AFM image of the corresponding transistor.
- FIG. 8 illustrates a SEM image of DOTVAnt in organogel and an AFM image of source and drain electrodes and a nanofiber channel layer.
- Graph (a) of FIG. 9 is a graph illustrating output characteristics of a single DOTVAnt nanofiber transistor
- graph (b) of FIG. 9 is a graph illustrating transfer characteristics of a single DOTVAnt nanofiber transistor.
- the single nanofiber transistor exhibits p-type characteristics with an estimated p of holes of about 0.48 cm 2 /v ⁇ s in the saturation region and an on/off ratio of 10 5 .
- the transistor performance of DOTVAnt based on the single nanofiber is much better that of an existing solution processed transistor based on thin films. This result may explain that 1D alignment of well-ordered DOTVAnt molecules through gelation process and a lack of grain boundaries provides an effective charge transport layer comparable to that of a thin film layer.
- FIG. 10 illustrates a high mobility (up to 8.7 cm 2 /V ⁇ s) obtained from a nanofiber with a width of 70 nm.
- I-V current-voltage
- 1D arrangement of rigid ⁇ -conjugated vinylene-based anthracene through the gelation process is described herein.
- a nanofiber based on organogel is introduced, and an individual charge transport layer with high field-effect mobility and on/off ratio in a single nanofiber transistor is successfully incorporated.
- TGA analyses were performed using a TGA Q50 TA instrument at 10° C. ⁇ min ⁇ 1 under a nitrogen atmosphere.
- Single nanofiber transistors were fabricated using bottom contact geometry.
- a heavily doped silicon wafer was used as a gate electrode, a HMDS treated SiO 2 layer (thickness of equal to or less than 300 nanometers, “nm”) was used as a gate dielectric layer.
- Cr/Au (2 nm and 40 nm, respectively) was thermally evaporated to form source and drain electrodes and patterned using photolithography and lift off methods.
- the resulting bottom contact substrates consisted of arrays having the dimensions 1000 micrometers (“ ⁇ m”) by 1000 ⁇ m and square electrodes with a 5 to 10 ⁇ m channel gap.
- nanofibers of DOTVAnt in chloroform (0.01 milligrams per milliliter, “mg/mL”) were spin-coated at a rate of equal to or less than 3000 revolutions per minute (“rpm”) onto the patterned electrode substrate.
- rpm revolutions per minute
- the resulting coated substrate was observed using a light microscope.
- the electrical characterization of a single nanofiber transistor was performed at room temperature in air using a Keithley 4200-SCS semiconductor.
- the W/L ratio of the nanofibers was observed using a field-emission scanning electron microscopic device (FE-SEM, JSM7401F, JEOL).
- I DS WC i 2 ⁇ L ⁇ ⁇ ⁇ ( V GS - V T ) 2
- I DS is the source-drain saturation current
- C i 1.1 ⁇ 10 ⁇ 8 farads (“F”) is the capacitance of the SiO 2 insulator
- W/L is a ratio of the width of the nanofiber to the length across the source and drain electrodes
- V GS and V T are the gate and the threshold voltages, respectively.
- Zinc powder (6.0 g) was added to a solution of 2,6-bis(hydroxymethyl)anthraquinone (2.8 g 10.43 mmol) in ammonium hydroxide (70 mL). The mixture was refluxed overnight. Then, undissolved materials were removed by filtration and washed with DMSO. The solution was precipitated in 200 mL of 1N HCl. Products collected by filtering the solution were 2,6-bis(dihydroxymethyl)anthracene (1.86 g, 75%).
- PBr 3 (4.4 g, 16.30 mmol) was added dropwise to a suspension of 2,6-bis(dihydroxymethyl)anthracene (1.5 g, 6.29 mmol) in DMF (30 mL) at 0° C. Upon formation of yellow precipitation, the mixture was heated to room temperature and stirred for 4 hours. Solid products were collected by filtration and washed with water and hexane to obtain yellow solid 2,6-bis(dibromomethyl)anthracene (2.2 g, 98%). The products were recrystallized from DMF to obtain purified products.
- 2,6-Bis(dibromomethyl)anthracene (2.2 g, 6.04 mmol) was added to triethylphosphite (50 mL), and the resulting solution was refluxed for 12 hours. The solvent was removed in a vacuum, and the residue was purified by column chromatography on silica gel using ethyl acetate/dichloromethane (2:1) as an elutent. The yield was 90%.
- LDA Lithium diisopropylamide
- THF anhydrous tetrahydrofuran
- the mixture was stirred for 1 hour and then 5-dodecylthiophene-2-carbaldehyde (2.30 g, 8.20 mmol) in THF (20 mL) was added dropwise thereto over a period of 10 minutes.
- 5 mL of water was added thereto and the solvent was evaporated. The residue was washed with water and MeOH. The desired product was separated by washing.
- Organic semiconductor compounds prepared by substituting TVAnt backbones with alkyl groups may be similarly synthesized.
- Organic semiconductor compounds prepared by substituting anthracene backbones with vinyl groups and compounds without vinyl groups may also be prepared.
- the anthracene-based organic semiconductor compound according to the present embodiment may be efficiently used for gelation.
- the BTBT backbone is synthesized according to the scheme below.
- a vinyl group may be introduced to the backbone through Horner-Emmons coupling between a phosphonate derivative and an aldehyde derivative by introducing various aldehyde derivatives thereto.
- an alkyl-substituted phenyl group, an alkyl-substituted thiophenyl group, an alkyl-substituted naphthyl group, or the like or a combination thereof may be introduced into the BTBT backbone according to the scheme.
- the resulting compounds have gelation capability.
- nanofibers based on organogel are introduced into an organic semiconductor compound.
- a thin film is formed using a solution process, well-ordered structures may not be obtained, and thus electrical characteristics may be decreased.
- an efficient and high performance charge transport layer may be obtained.
- the organic thin film transistor according to one or more of the above embodiments has excellent performance, may be applied to a flexible electronic device and may be fabricated inexpensively.
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Abstract
Description
wherein A1 is a C10-C20 arylene group or a C10-C20 heteroarylene group, A2 and A3 are each independently a C6-C20 arylene group or C2-C20 heteroarylene group, I is 0 or 1, m is in a range of about 1 to about 10, specifically in a range of about 1 to about 5, more specifically about 3, and n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12. An arylene group is a bivalent aromatic ring system capable of having at least two rings, wherein the at least two rings may be connected or fused to each other. A heteroarylene group is a bivalent group in which at least one carbon atom of the arylene group is substituted with at least one atom selected from the group consisting of N, O, S and P.
wherein n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein m is in a range of about 1 to about 10, specifically in a range of about 1 to about 5, more specifically about 3, and n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein m is in a range of about 1 to about 10, specifically in a range of about 1 to about 5, more specifically about 3, and n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein m is in a range of about 1 to about 10, specifically in a range of about 1 to about 5, more specifically about 3, and n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12,
wherein n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12 and
wherein m is in a range of about 1 to about 10, specifically in a range of about 1 to about 5, more specifically about 3, and n is in a range of about 1 to about 20, specifically in a range of about 9 to about 15, more specifically about 12 or a combination comprising at least one of the foregoing.
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