US8790746B2 - Method for manufacturing a polymer molecular film for photo-electronic device - Google Patents
Method for manufacturing a polymer molecular film for photo-electronic device Download PDFInfo
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- US8790746B2 US8790746B2 US12/571,110 US57111009A US8790746B2 US 8790746 B2 US8790746 B2 US 8790746B2 US 57111009 A US57111009 A US 57111009A US 8790746 B2 US8790746 B2 US 8790746B2
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- 229920000642 polymer Polymers 0.000 title claims abstract description 68
- 239000002120 nanofilm Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229920000547 conjugated polymer Polymers 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 43
- 238000007373 indentation Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 3
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- -1 polyphenylene Polymers 0.000 claims description 2
- 229920000123 polythiophene Polymers 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/312—Non-condensed aromatic systems, e.g. benzene
-
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
-
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
- C08G2261/342—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms
- C08G2261/3422—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms conjugated, e.g. PPV-type
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon
Definitions
- This invention relates to a polymer molecular film, a photo-electronic element and a method for manufacturing the same.
- Polymer is constructed by repetitive chemical bonding between low molar mass molecules.
- the common structures can be linear, network, or branched.
- conventional polymeric materials are generally insulators, polymers with conjugated chain structures are capable to conduct electricity by transport of pi electrons.
- the conductivity of conjugated polymers can reach the levels of doped inorganic semiconductors or some conductors.
- This unique property when combined with other important advantages such as low material cost, simple fabrication processes, compatibility with large area manufacturing, light weights, and bendable mechanical properties, has made conjugated polymers emerging as the vital candidate for next generation optoelectronics.
- PLEDs polymer light emitting diode
- conjugated polymers are used as a kind of light emitting material, which in turn is applied between positive electrodes and negative electrodes to form light emitting films.
- forward bias is applied, holes are injected into the polymer molecular film from the positive electrodes and enter valence band to become positive polarons.
- electrons are injected from negative electrodes and enter a conducting band to become negative polarons. And the two polarons move in the opposing directions to be combined to emit fluorescence (visible light).
- Polymer LEDs can become polymer semiconductor laser with proper design and manufacturing process.
- the operation principle of the polymer semiconductor laser is generally similar to that of polymer LEDs, but that the resonant cavity structure is particularly introduced and population inversion is achieved by suitable electron levels, so that when the light is transmitted in the semiconductor polymer layer, energy gap wavelength photons are stimulated to emit high intensity coherent light.
- the elements having the similar structure to the aforementioned structures can also be used to generate electrical power, such as using that to manufacture an electrical power generating element using solar energy.
- electrical power such as using that to manufacture an electrical power generating element using solar energy.
- the energy of the photons to separate the electrons and the holes. After being separated, the holes move towards positive electrodes, and the electrons move towards negative electrodes so as to form charges needed by external circuits, and the photonic energy can be transformed into electrical energy.
- the first objective of this invention is to provide a polymer molecular film.
- the polymer molecular film has higher light-emitting/power-generating efficiency, which can be widely applied in manufacturing all kinds of photo-electronic elements.
- the polymer molecular film is formed on a substrate through a deformation process.
- the polymer molecular films comprise a plurality of conjugated polymers, wherein at least one of the plurality of conjugated polymers has a stretched molecular structure.
- the second objective of this invention is to provide a method for manufacturing aforementioned polymer molecular films.
- the method includes the following steps: First, applying a conjugated polymeric material on a substrate to form a polymeric material layer; then, un-stabilizing the polymeric material layer to form a polymer molecular film; wherein, at least one conjugated polymer of the polymer molecular films has a stretched molecular structure.
- the step of un-stabilizing the polymeric material layer to form the polymer molecular film further comprises: disposing the polymeric material layer in vapor of a solvent.
- the step of unstablizing the polymeric material layer to form the polymer molecular film further comprises: heating the polymeric material layer until the temperature is higher than glass transition temperature of the conjugated polymeric materials.
- the third objective of this invention is to provide a photo-electronic element, comprising the aforementioned polymer molecular films, so that the photo-electronic element has higher light-emitting/power-generating efficiency.
- the photo-electronic element comprises a substrate, the polymer molecular film and a protection layer.
- the substrate and the protection layer can also be the transporting layer for the electrodes, or electrons and holes.
- the polymer molecular film is formed on the substrate, and the protection layer is formed on the polymer molecular film to prevent the polymer molecular film from oxidation or wear.
- the fourth objective of this invention is to provide the method for manufacturing the aforementioned photo-electronic elements.
- the steps of the method include the following: First, preparing a substrate, then applying a conjugated polymeric material on the substrate to form a polymeric material layer, and then un-stabilizing the polymeric material layer to form the polymer molecular film; wherein, at least one conjugated polymer in the polymer molecular films has a stretched molecular structure.
- FIG. 1 illustrates a flow chart of an exemplary polymer molecular film manufacturing method in accordance with embodiments of this invention.
- FIG. 2A illustrates an exemplary substrate in accordance with embodiments of this invention.
- FIG. 2B illustrates an exemplary polymeric material layer in accordance with embodiments of this invention.
- FIG. 2C illustrates an exemplary polymer molecular film in accordance with embodiments of this invention.
- FIG. 3 illustrates an exemplary flow chart of the polymer molecular film manufacturing method in accordance with embodiments of this invention.
- FIG. 4 illustrates an exemplary polymer molecular film in accordance with embodiments of this invention correspond to the photoluminance spectra of different dewetting time during dewetting process.
- FIG. 5 illustrates the cross-sectional view of an exemplary light emitting element in accordance with embodiments of this invention.
- This invention provides a sort of polymer molecular film, photo-electronic element, and the method of manufacturing the polymer molecular film and the photo-electronic element.
- the followings are the embodiment and the practical applications of the invention, and those will be further described to better explain the characteristics, spirits and advantages of this invention.
- FIG. 1 illustrates the flow chart of the polymer molecular film manufacturing method of an embodiment of this invention.
- FIG. 2A illustrates the substrate 10 formed by Step S 50 in FIG. 1 ;
- FIG. 2B illustrates the polymeric material layer 12 formed by Step S 52 in FIG. 1 ;
- FIG. 2C illustrates the polymer molecular film 14 formed by Step S 54 in FIG. 1 .
- the manufacturing method according to this embodiment includes the following steps:
- Step S 50 preparing a substrate 10 , for example but not limited to, a glass substrate, Indium Tin Oxides (ITO), etc.
- a substrate 10 for example but not limited to, a glass substrate, Indium Tin Oxides (ITO), etc.
- Step S 52 applying conjugated polymeric material to form a polymeric material layer 12 on the substrate 10 .
- the conjugated polymeric material is applied to the substrate 10 by spin coating or other proper means.
- the thickness of the polymeric material layer 12 is less than 300 nm, such as 200 nm, 100 nm, 50 nm, and preferably less than 30 nm.
- the conjugated polymeric material can be a single polymer or several polymers composed of a sort of mixture or copolymer.
- the conjugated polymer includes, but not limited to, poly[1-methoxy-4-(2′-ethyl-hexyloxy)-2,5-phenylene vinylene], MEH-PPV, polythiophene or polyphenylene, etc.
- the conjugated polymeric material may include other nonconjugated polymeric materials, such as polystyrene (PS), as well as other proper additives.
- Step S 54 heating the polymeric material layer 12 such that the temperature of the polymeric material layer 12 is higher than the glass transition temperature (Tg) so as to allow the polymeric material layer 12 to deform to the polymer molecular film 14 .
- Tg glass transition temperature
- the polymer molecular film 14 has a plurality of protrusion areas 140 and, possibly, a plurality of serial indentation areas 142 .
- at least one conjugated polymer of the plurality of indentation areas 142 has a stretched molecular structure in unilateral direction.
- the distance between the surface 1420 of the indentation area 142 and the surface 102 of the substrate 10 is less than 100 nm; for example, between 0.5 nm and 50 nm, and preferably less than 20 nm.
- the thickness of the indentation areas can be controlled.
- Step S 54 is the conventional dewetting step.
- This step can drag conjugated polymers on the surface of the substrate to form a film having stretched molecular structures, and the originally flat polymeric material layer is now fractured to form droplets (same as the protrusion area described above). Because the conjugated polymers are stretched, the conjugated polymeric chains are less likely to be bent, so that the charges (including electrons and holes) can move freely on the polymer chains without being trapped by polymer chains and therefore, it is easier to emit light/generate power.
- the luminous efficiency of the polymer molecular film after, being dewetted has at least one order of magnitude higher than that of the polymer molecular film before being dewetted.
- FIG. 3 illustrates a flow chart of the polymer molecular film manufacturing method of a different embodiment of this invention.
- Step S 54 in FIG. 1 can be replaced by Step S 56 which proceeds the followings: under room temperature, disposing the polymeric material layer in the vapor of a certain solvent (such as Toluene, p-toluene, Tetrahydrofuran (THF), methanol or other proper solvents), such that the polymeric material layer 12 is un-stabilized and deformed to become the polymer molecular film 14 .
- a certain solvent such as Toluene, p-toluene, Tetrahydrofuran (THF), methanol or other proper solvents
- Step S 52 and S 54 /S 56 can be repetitively implemented to form multiple polymer molecular film layers to increase light-emitting/power-generating efficiency.
- the method of this invention can also include the following steps: removing the parts of the protrusion areas which are higher than the indentation areas, such that the polymer molecular film has the surface that is generally flat. By doing this, the situation that the light emitted from the indentation area is affected by the protrusion areas can be avoided.
- Step S 52 and S 54 are implemented repetitively to form multiple polymer molecular film layers, the protrusion areas may be remained, so as to help fix the bonding between the films.
- FIG. 4 illustrates polymer molecular films of an embodiment of this invention during dewetting process, corresponding to the photoluminance spectra in different dewetting time.
- luminous polymeric material MEH-PPV is spin coated on a silicone oxide to form a film with 20 nm thickness, and disposed in an environment of 100 degrees (° C.) of temperature for different time periods to implement dewetting.
- FIG. 4 shows the results generated by a fluorescence spectrometer. As illustrated by the figure, when the dewetting time period is 300 minutes, the film is completely dewetted and the luminous efficiency increases 30 times to that of the film before dewetting.
- This invention further provides method for manufacturing the photo-electronic element having therein the aforementioned polymer molecular films.
- the photo-electronic element can be applied in many different fields; for example, used as polymer LEDs, polymer semiconductor laser, solar cell elements, etc, but not limited to thereto.
- FIG. 5 schematically illustrates the cross-sectional view of the light-emitting element of the embodiment of this invention.
- the light emitting element 2 of this invention includes a substrate 20 , a positive electrode 22 , a hole transporting layer 24 , a light emitting layer 26 and a negative electrode 28 .
- the substrate 20 can be made of a transparent glass or other appropriate materials.
- the positive electrode 22 can be made of a conductive material, such as Indium oxide (ITO).
- the hole transporting layer 24 can be made of conductive polymeric material (3,4-polyethylenedioxythiophene/polystyrenesulfonate blend, PEDOT/PSS).
- the light emitting layer 26 is made of polymer molecular film of this invention.
- the negative electrodes 28 can be made of aluminum or other metals.
- the photo-electronic element of this invention apart from the aforementioned substrates and polymer molecular films, it also includes a protection layer formed on the polymer molecular film to prevent the polymer molecular film from oxidation or wear.
- the photo-electronic element of this invention can include positive and negative electrodes respectively disposed on the substrate and the protection layer.
- the photo-electronic element of this invention can also include other functional layers depending on the situation without being limited by any specific types.
- the polymer molecular films and the photo-electronic element of this invention increase the light-emitting/power-generating efficiency by the indentation areas formed by stretched conjugated polymers. Moreover, this process can be achieved without taking much time and costing much money, which is highly industrially applicable.
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
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US14/303,404 US9349959B2 (en) | 2008-12-24 | 2014-06-12 | Method of manufacturing a polymer molecular film |
US15/136,547 US20160240787A1 (en) | 2008-12-24 | 2016-04-22 | Photoelectronic element |
US15/136,578 US20160240788A1 (en) | 2008-12-24 | 2016-04-22 | Polymer molecular film |
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TW97150547A | 2008-12-24 | ||
TW97150547A TWI425695B (zh) | 2008-12-24 | 2008-12-24 | 高分子薄膜及其製造方法暨包含該高分子薄膜的光電元件及其製造方法 |
TW097150547 | 2008-12-24 |
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US12/571,110 Expired - Fee Related US8790746B2 (en) | 2008-12-24 | 2009-09-30 | Method for manufacturing a polymer molecular film for photo-electronic device |
US14/303,404 Active US9349959B2 (en) | 2008-12-24 | 2014-06-12 | Method of manufacturing a polymer molecular film |
US15/136,547 Abandoned US20160240787A1 (en) | 2008-12-24 | 2016-04-22 | Photoelectronic element |
US15/136,578 Abandoned US20160240788A1 (en) | 2008-12-24 | 2016-04-22 | Polymer molecular film |
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US15/136,547 Abandoned US20160240787A1 (en) | 2008-12-24 | 2016-04-22 | Photoelectronic element |
US15/136,578 Abandoned US20160240788A1 (en) | 2008-12-24 | 2016-04-22 | Polymer molecular film |
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TWI560919B (en) * | 2011-08-25 | 2016-12-01 | Univ Nat Tsing Hua | Method for enhancing optoelectronic properties of conjugated polymers |
JP6164810B2 (ja) * | 2012-09-03 | 2017-07-19 | 日東電工株式会社 | 樹脂フィルム |
TWI567487B (zh) | 2015-04-15 | 2017-01-21 | 國立清華大學 | 薄膜圖案形成方法 |
US10615345B2 (en) * | 2016-06-03 | 2020-04-07 | The Trustees Of Princeton University | Method and device for using an organic underlayer to enable crystallization of disordered organic thin films |
CN108258057A (zh) * | 2018-01-19 | 2018-07-06 | 云谷(固安)科技有限公司 | 柔性基底结构及其制备方法与柔性器件 |
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JPH02298552A (ja) * | 1989-03-02 | 1990-12-10 | Katsumi Yoshino | 共役系重合体機能ゲル及びその変形方法 |
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US20140295137A1 (en) | 2014-10-02 |
TWI425695B (zh) | 2014-02-01 |
TW201025696A (en) | 2010-07-01 |
US20160240787A1 (en) | 2016-08-18 |
US9349959B2 (en) | 2016-05-24 |
US20160240788A1 (en) | 2016-08-18 |
US20100159205A1 (en) | 2010-06-24 |
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