US8723412B2 - White lighting device - Google Patents

White lighting device Download PDF

Info

Publication number
US8723412B2
US8723412B2 US13/609,845 US201213609845A US8723412B2 US 8723412 B2 US8723412 B2 US 8723412B2 US 201213609845 A US201213609845 A US 201213609845A US 8723412 B2 US8723412 B2 US 8723412B2
Authority
US
United States
Prior art keywords
phosphor
blue
light
lighting device
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US13/609,845
Other versions
US20130241394A1 (en
Inventor
Katsutoshi Nakagawa
Yumi Ito
Masahiko Yamakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Semiconductor Co Ltd
Original Assignee
Toshiba Corp
Toshiba Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Materials Co Ltd filed Critical Toshiba Corp
Assigned to TOSHIBA MATERIALS CO., LTD., KABUSHIKI KAISHA TOSHIBA reassignment TOSHIBA MATERIALS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ITO, YUMI, YAMAKAWA, MASAHIKO, NAKAGAWA, KATSUTOSHI
Publication of US20130241394A1 publication Critical patent/US20130241394A1/en
Application granted granted Critical
Publication of US8723412B2 publication Critical patent/US8723412B2/en
Assigned to TOSHIBA MATERIALS CO., LTD. reassignment TOSHIBA MATERIALS CO., LTD. NUNC PRO TUNC ASSIGNMENT (SEE DOCUMENT FOR DETAILS). Assignors: KABUSHIKI KAISHA TOSHIBA
Assigned to SEOUL SEMICONDUCTOR CO.,LTD. reassignment SEOUL SEMICONDUCTOR CO.,LTD. NUNC PRO TUNC ASSIGNMENT (SEE DOCUMENT FOR DETAILS). Assignors: Toshiba Materials Co.,Ltd.
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7734—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7737—Phosphates
    • C09K11/7738—Phosphates with alkaline earth metals
    • C09K11/7739—Phosphates with alkaline earth metals with halogens
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7784—Chalcogenides
    • C09K11/7787—Oxides
    • C09K11/7789—Oxysulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • Embodiments described herein relate generally to a white lighting device.
  • a high efficiency white lighting device in which a semiconductor light-emitting element such as a light-emitting diode (LED) and a phosphor to emit light by being excited with light emitted from the semiconductor light-emitting element are combined has been commercialized.
  • a white lighting device using the semiconductor light-emitting element is high efficiency as compared with a conventional white lighting device such as an incandescent lamp or a fluorescent lamp to thus greatly contribute to saving of energy.
  • the white lighting device using the semiconductor light-emitting element does not necessarily have a sufficient color rendering property.
  • the use of the white lighting device using the semiconductor light-emitting element is made possible even in the applications of special lighting to make it possible to greatly contribute to saving of energy.
  • an average color rendering index Ra and special color rendering indexes R9 to R15 are cited.
  • the color rendering property becomes suitable in the applications of special lighting.
  • the special color rendering index R9 is to specify the visibility of red, and it is said that as the special color rendering index R9 is close to 100, the expressiveness of red is high.
  • lamps called a high color rendering type are classified into three ranks of color rendering A, color rendering AA, and color rendering AAA.
  • the average color rendering index Ra is required to be about 85 or more, and is more preferably required to be 90 or more.
  • the special color rendering index R9 is required to be about 85 or more, and is more preferably required to be 90 or more.
  • the white lighting devices each using the above-described semiconductor light-emitting element, particularly a light-emitting diode, are roughly classified into ones each using a blue light-emitting diode emitting blue light and ones each using a near-ultraviolet light-emitting diode emitting ultraviolet light.
  • the white lighting devices each using the blue light-emitting diode among them, one combined with a yellow phosphor, and one combined with a green phosphor and a red phosphor are cited.
  • the one combined with the yellow phosphor has difficulty in obtaining the average color rendering index Ra of 85 or more, and has difficulty in being used in the applications of special lighting.
  • the one combined with the green phosphor and the red phosphor can obtain the average color rendering index Ra or 85 or more, but has difficulty in obtaining the special color rendering index R9 of 85 or more and has difficulty in being used in the applications of special lighting.
  • the white lighting devices each using the near-ultraviolet light-emitting diode, one combined with a blue phosphor, a green phosphor, and a red phosphor, and one combined with a blue phosphor, a red phosphor, and a yellow phosphor in place of the green phosphor have been known.
  • the one having a correlated color temperature in excess of 5000 K can obtain the average color rendering index Ra and the special color rendering index R9 that are 85 or more, and can be used in the applications of special lighting.
  • the white lighting device having the correlated color temperature of 5000 K or less has difficulty in obtaining the average color rendering index Ra and the special color rendering index R9 that are 85 or more, and particularly has difficulty in obtaining the special color rendering index R9 of 85 or more, and has difficulty in being used in the applications of special lighting.
  • FIG. 1 is a cross-sectional view showing one example of a white lighting device in an embodiment.
  • FIG. 2 is a view showing an emission spectrum of a white lighting device in an example 1.
  • a white lighting device in an embodiment includes: a semiconductor light-emitting element emitting near-ultraviolet light; and a phosphor layer containing a blue-green phosphor having an emission peak in a wavelength region of not less than 480 nm nor more than 520 nm, a red phosphor having an emission peak in a wavelength region of not less than 585 nm nor more than 630 nm, and two or more phosphors each having an emission peak in a wavelength region other than the wavelength regions.
  • the white lighting device in the embodiment emits white light having a correlated color temperature of 5000 K or less and a deviation duv from a blackbody locus of not less than ⁇ 0.01 nor more than 0.01.
  • the white lighting device in the embodiment has a ratio of a content of the red phosphor to a content of the blue-green phosphor in the phosphor layer by mass of not less than 35 nor more than 50.
  • the white lighting device in the embodiment includes a semiconductor light-emitting element emitting near-ultraviolet light, and a phosphor layer containing a blue-green phosphor having an emission peak in a wavelength region of not less than 480 nm nor more than 520 nm, a red phosphor having an emission peak in a wavelength region of not less than 585 nm nor more than 630 nm, and two or more phosphors each having an emission peak in a wavelength region other than the above wavelength regions and emits white light having a correlated color temperature of 5000 K or less and a deviation duv from a blackbody locus of not less than ⁇ 0.01 nor more than 0.01, in which a ratio of a content of the red phosphor to a content of the blue-green phosphor in the phosphor layer by mass is not less than 35 nor more than 50.
  • FIG. 1 is a cross-sectional view showing one example of the white lighting device in the embodiment.
  • a white lighting device 1 includes a semiconductor light-emitting element (chip) 2 as an excitation source (light source).
  • the semiconductor light-emitting element 2 is to emit near-ultraviolet light, and specifically is to emit light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm, preferably not less than 380 nm nor more than 410 nm.
  • an ultraviolet light-emitting diode for example, an ultraviolet light-emitting diode, a violet light-emitting diode, an ultraviolet light-emitting laser (laser diode), a violet light-emitting laser (laser diode), or the like is used.
  • a light-emitting diode among them for example, a light-emitting diode based on InGaN, GaN, AlGaN, or the like is used.
  • the semiconductor light-emitting element 2 as above and later-described phosphors are combined, thereby making it possible to fabricate the white lighting device 1 that has the correlated color temperature of 5000 K or less, has a sufficiently high average color rendering index Ra and a sufficiently high special color rendering index R9, and is suitably used for medical lighting, lighting for jewelry goods, lighting for foods, lighting for photographing, and so on.
  • the semiconductor light-emitting element 2 is mounted on a substrate 3 .
  • a wiring substrate having a wiring network on its surface and in its inside is used as the substrate 3 .
  • electrodes of the semiconductor light-emitting element 2 and the wiring networks of the wiring substrate 3 are electrically connected, and thereby a direct-current voltage is applied to the semiconductor light-emitting element 2 .
  • the semiconductor light-emitting element 2 is covered with a transparent resin layer 4 in order to improve light use efficiency.
  • the transparent resin layer 4 is formed into, for example, a hemispherical shape covering the whole of the semiconductor light-emitting element 2 as illustrated in FIG. 1 , but is only needed to be formed so as to cover at least a light-emitting surface of the semiconductor light-emitting element 2 .
  • the transparent resin layer 4 is not necessarily needed to be provided, and a later-described phosphor layer 5 may also be directly formed on the semiconductor light-emitting element 2 .
  • the phosphor layer 5 On the transparent resin layer 4 covering the semiconductor light-emitting element 2 , the phosphor layer 5 is formed.
  • the phosphor layer 5 is that a phosphor 7 for obtaining white light is dispersed in a resin 6 having transparency.
  • the phosphors 7 are to emit white light all together by being excited by light radiated from the semiconductor light-emitting element 2 .
  • the transparent resin that forms the transparent resin layer 4 and the phosphor layer 5 is made of a resin having transparency such as, for example, a silicone resin or an epoxy resin.
  • the phosphors 7 for obtaining white light are constituted by containing at least a blue-green phosphor that absorbs light (for example, ultraviolet light or violet light) radiated from the semiconductor light-emitting element 2 to emit blue-green light and a red phosphor that absorbs light radiated from the semiconductor light-emitting element 2 to emit red light. That is, the phosphors 7 are mixed phosphors that contain at least the blue-green phosphor and the red phosphor.
  • the phosphors 7 are formed of not only the above-described blue-green phosphor and red phosphor but also a blue phosphor that absorbs light radiated from the semiconductor light-emitting element 2 to emit blue light and a yellow phosphor that absorbs light radiated from the semiconductor light-emitting element 2 to emit yellow light.
  • the blue-green phosphor is to be excited with light emitted from the semiconductor light-emitting element 2 to emit light having an emission peak in a wavelength region of not less than 480 nm nor more than 520 nm.
  • the red phosphor is to emit light having an emission peak in a wavelength region of not less than 585 nm nor more than 630 nm
  • the blue phosphor is to have an emission peak in a wavelength region of not less than 440 nm nor more than 460 nm
  • the yellow phosphor is to have an emission peak in a wavelength region of not less than 525 nm nor more than 575 nm.
  • the respective color phosphors forming the phosphors 7 may each be made of one type of phosphor, or may also each be made of two types or more of phosphors. Further, the phosphors 7 may also subsidiarily contain a phosphor having an emission color other than the above colors, for example, an orange phosphor, a deep red phosphor, or the like. It is also possible that these blue-green phosphor, red phosphor, blue phosphor, and yellow phosphor are dispersed in the phosphor layer 5 in a state of being previously bound by a binder.
  • Electric energy applied to the white lighting device 1 is converted into ultraviolet light or violet light by the semiconductor light-emitting element 2 .
  • the light emitted from the semiconductor light-emitting element 2 is converted into longer-wavelength light by the phosphors 7 dispersed in the phosphor layer 5 .
  • lights emitted from the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor that form the phosphors 7 are mixed to be emitted, and thereby white light is emitted all together.
  • the white lighting device 1 in the embodiment uses the phosphors containing at least the blue-green phosphor and the red phosphor as the phosphors 7 , and the ratio (the content of the red phosphor/the content of the blue-green phosphor) of the content of the red phosphor to the content of the blue-green phosphor in the phosphor layer 5 (phosphors 7 ) by mass is set to be not less than 35 nor more than 50.
  • the special color rendering index R9 is a color rendering index for red, and can be improved by increasing the content of a red phosphor, but when the content of a red phosphor is simply increased, the correlated color temperature is likely to be reddish rather than the targeted correlated color temperature.
  • the blue-green phosphor emitting blue-green light which is a complementary color of red light, is used together, thereby making it possible to increase the content of the red phosphor more than conventionally while suppressing a change from the targeted correlated color temperature.
  • the average color rendering index Ra and the special color rendering index R9 that are, for example, 85 or more and more preferably the average color rendering index Ra and the special color rendering index R9 that are 90 or more.
  • the correlated color temperature is 5000 K or less, it is not necessarily limited, but the correlated color temperature is normally 2600 K or more.
  • the correlated color temperature and the deviation duv from the blackbody locus are specified based on the specification method disclosed in JIS Z8725.
  • the average color rendering index Ra and the special color rendering index R9 are specified based on the method of specifying color rendering properties disclosed in JIS Z8726.
  • the sufficiently high special color rendering index R9 which is, for example, 85 or more, cannot be obtained.
  • the sufficiently high special color rendering index R9 can be obtained, but the correlated color temperature is likely to be reddish.
  • the ratio of the content of the red phosphor to the total content of the phosphors 7 namely the total content of the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor differs according to the targeted correlated color temperature, average color rendering index Ra and special color rendering index R9, and the content ratio of the red phosphor to the blue-green phosphor, but is preferably not less than 45 mass % nor more than 85%, and is more preferably not less than 50 mass % nor more than 80 mass %.
  • the ratio of the content of the red phosphor to the total content of the phosphors 7 is less than 45 mass %, there is a risk that the sufficiently high special color rendering index R9 cannot be obtained.
  • the ratio of the content of the red phosphor to the total content of the phosphors 7 exceeds 85 mass %, the sufficiently high special color rendering index R9 can be obtained, but the correlated color temperature is likely to be reddish.
  • the ratio of the content of the blue phosphor to the total content of the phosphors 7 and the ratio of the content of the yellow phosphor to the total content of the phosphors 7 also differ according to the targeted correlated color temperature and the like, but the ratio of the content of the blue phosphor is preferably, for example, not less than 10 mass % nor more than 50 mass % and is more preferably not less than 15 mass % nor more than 45 mass %. Further, the ratio of the content of the yellow phosphor is preferably, for example, not less than 1 mass % nor more than 10 mass % and is more preferably not less than 1 mass % nor more than 7 massa.
  • the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor each efficiently absorb ultraviolet light or violet light radiated from the semiconductor light-emitting element 2 to emit light having an emission peak in the above-described wavelength region, they are not necessarily limited, but if there is a large illuminance difference among the respective colors, white light in which the color with high illuminance strongly appears is likely to be produced, and further in order to improve the color rendering property of white light, there is a need to enhance a balance of the respective colors. For this reason, as the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor that form the phosphors 7 , ones described below are preferably used in a combined manner.
  • a europium-activated barium strontium orthosilicate phosphor having a composition represented by a general formula: (Ba 1-x-y Sr x Eu y ) 2 SiO 4 (1) (in the formula, x is a number satisfying 0 ⁇ x ⁇ 0.5 and y is a number satisfying 0.005 ⁇ y ⁇ 0.25).
  • the europium-activated barium strontium orthosilicate phosphor represented by the general formula (1) as the blue-green phosphor is excellent in absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm and can efficiently emit blue-green light being a complementary color for red. This makes it possible to increase the content of the red phosphor to effectively improve the special color rendering index R9 while suppressing that the correlated color temperature becomes reddish.
  • red phosphor there is suitably used a europium-activated lanthanum oxysulfide phosphor having a composition represented by a general formula: (La 1-x-y Eu x M y ) 2 O 2 S (2) (in the formula, M represents at least one type selected from Sm, Ga, Sb, and Sn, and x and y are numbers satisfying 0.008 ⁇ x ⁇ 0.16 and 0.000001 ⁇ y ⁇ 0.003).
  • the europium-activated lanthanum oxysulfide phosphor represented by the general formula (2) as the red phosphor is excellent in absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm, and is also excellent in combination with the europium-activated barium strontium orthosilicate phosphor represented by the general formula (1) as the blue-green phosphor.
  • the blue phosphor there is suitably used a europium-activated alkaline earth chlorophosphate phosphor having a composition represented by a general formula: (Sr 1-x-y ,Ba x Ca y Eu z ) 5 (PO 4 ) 3 Cl (3) (in the formula, x, y, and z are numbers satisfying 0 ⁇ x ⁇ 0.45, 0 ⁇ y ⁇ 0.03, and 0.005 ⁇ z ⁇ 0.03).
  • the europium-activated alkaline earth chlorophosphate phosphor represented by the general formula (3) as the blue phosphor is also excellent in absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm, and is also excellent in combination with the europium-activated barium strontium orthosilicate phosphor represented by the general formula (1) as the blue-green phosphor.
  • the blue phosphor it is also possible to use a europium-activated aluminate phosphor having a composition represented by a general formula: (Ba 1-x-y-z Sr x Ca y Eu z )MgAl 10 O 17 (3′) (in the formula: x, y, and z are numbers satisfying 0 ⁇ x ⁇ 0.1, 0 ⁇ y ⁇ 0.1, and 0.005 ⁇ z ⁇ 0.4).
  • a europium and manganese-activated alkaline earth magnesium silicate phosphor having a composition represented by a general formula: (Sr 1-x-y-z-u Ba x Mg y Eu z Mn u ) 2 SiO 4 (4) (in the formula, x, y, z, and u are numbers satisfying 0.1 ⁇ x ⁇ 0.35, 0.025 ⁇ y ⁇ 0.105, 0.025 ⁇ z ⁇ 0.25, and 0.0005 ⁇ u ⁇ 0.02).
  • the europium and manganese-activated alkaline earth magnesium silicate phosphor represented by the general formula (4) as the yellow phosphor is excellent in absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm as described also in International Publication Pamphlet No. 2008/096545, for example, and further as compared with a conventional yellow phosphor, has a high emission intensity in a range of not less than 600 nm nor more than 700 nm, and can effectively supplement the red light emission. Further, it has a sub-peak in the proximity of 450 nm, thereby being able to supplement also the blue light emission. This makes it possible to make white light excellent in luminance and color rendering property.
  • the above-described respective color phosphors each preferably have an average particle diameter of not less than 5 ⁇ m nor more than 80 ⁇ m.
  • the average particle diameter is set to represent a median (50% value) of particle size distribution.
  • the average particle diameter of the respective color phosphors is set to be not less than 5 ⁇ m nor more than 80 ⁇ m, thereby making it possible to improve the absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm that is emitted from the semiconductor light-emitting element 2 to fabricate the white lighting device 1 having high luminance.
  • the transparent resin layer 4 preferably has, for example, thickness on the light emitting surface of the semiconductor light-emitting element 2 of not less than 0.4 mm nor more than 10 mm.
  • the thickness of the transparent resin layer 4 is set to 0.4 mm or more, thereby making it possible to effectively improve the light use efficiency.
  • the thickness of the transparent resin layer 4 exceeds 10 mm, there is a risk that light absorption occurs.
  • the thickness of the transparent resin layer 4 is preferably 10 mm or less.
  • the thickness of the transparent resin layer 4 is preferably 0.8 mm or more, and further is preferably 1 mm or more. Further, in the case when the transparent resin layer 4 is formed into a hemispherical shape as shown in FIG. 1 , the radius of the hemispherical portion is preferably set to be not less than 0.4 mm nor more than 10 mm. Further, the thickness of the phosphor layer formed on the transparent resin layer 4 as above is preferably not less than 0.1 mm nor more than 2.0 mm.
  • the white lighting device 1 in the embodiment can be fabricated as follows, for example. First, a phosphor slurry containing respective color phosphor powders is prepared.
  • the phosphor slurry can be prepared by, for example, mixing the respective color phosphor powders with resins, respectively, and then mixing the mixtures.
  • the phosphor slurry can also be prepared by previously mixing the respective color phosphor powders, and then mixing the above mixed phosphor powder with the resin.
  • the mixing ratio of the phosphor powder and the resin can be appropriately selected according to the type and the particle diameter of the phosphor powder, and the resin is preferably set to be not less than 5 parts by mass nor more than 100 parts by mass with respect to 100 parts by mass of the phosphor powder, for example.
  • the mixing ratios of the respective color phosphor powders are preferably adjusted to the ratios of the contents as have been already explained.
  • the mixture of the phosphor powder and the resin can be performed with, for example, a well-known stirrer.
  • a liquid transparent resin is applied on the semiconductor light-emitting element 2 , and is solidified to form the transparent resin layer 4 .
  • the phosphor slurry is applied on the layer, and the resin in the phosphor slurry is solidified to form the phosphor layer 5 . In this manner, the white lighting device 1 can be fabricated.
  • the application of the transparent resin and the phosphor slurry can be performed in a manner that, for example, the wiring substrate 3 on which the semiconductor light-emitting element 2 is mounted is put into a mold, and from the above, the transparent resin and the phosphor slurry are supplied with a dispenser. Further, the application of the transparent resin and the phosphor slurry can also be performed by, for example, a printing method, an injection molding method, or the like.
  • the transparent resin and the resin in the phosphor slurry are applied and then cured by being heated in an oven or the like at a temperature of 100 to 200° C., and thereby the transparent resin layer 4 and the phosphor layer 5 can be formed.
  • the white lighting device 1 in the embodiment is to emit white light having the correlated color temperature of 5000 K or less and the deviation duv from the blackbody locus of not less than ⁇ 0.01 nor more than 0.01 and have, for example, the high average color rendering index Ra and special color rendering index R9 each being 85 or more.
  • the white lighting device 1 as above has the sufficiently high average color rendering index Ra and special color rendering index R9, and thus can be suitably used for medical lighting, lighting for jewelry goods, lighting for foods, lighting for photographing, and so on, and can greatly contribute to their saving of energy.
  • a white lighting device As the white lighting device, a white lighting device as shown in FIG. 1 was fabricated. First, blue-green phosphor powder, red phosphor powder, blue phosphor powder, and yellow phosphor powder having compositions and average particle diameters as shown in Table 1 were used and were compounded so as to have mixing ratios shown in Table 1 and were mixed to make mixed phosphor powder. 60 parts by mass of a silicone resin was mixed in 40 parts by mass of the above mixed phosphor powder to prepare a phosphor slurry to be the phosphor layer 5 .
  • a silicone resin to be the transparent resin layer 4 was applied and then the above-described phosphor slurry was applied. This was heat-treated at a temperature of 140° C. to cure the silicone resin, and thereby the white lighting device emitting white light having the correlated color temperature of 4000 to 5000 K and the deviation duv from the blackbody locus of not less than ⁇ 0.01 nor more than 0.01 was fabricated.
  • the transparent resin layer was formed into a hemispherical shape, and the radius was set to 0.8 mm. Further, the thickness of the phosphor layer was set to 0.5 mm.
  • a white lighting device having the correlated color temperature falling within a range of 4000 to 5000 K was fabricated in the same manner as in the example 1 except that, as shown in Table 2, a near-ultraviolet light-emitting diode having an emission peak wavelength of 400 nm was used and red phosphor powder having a different composition was used.
  • a white lighting device having the correlated color temperature falling within a range of 4000 to 5000 K was fabricated in the same manner as in the example 1 except that, as shown in Table 3, a near-ultraviolet light-emitting diode having an emission peak wavelength of 395 nm was used and red phosphor powder having a different composition was used.
  • a white lighting device was fabricated in the same manner as in the example 1 except that, as shown in Table 4, the mixing ratios of the respective color phosphor powders were changed so that the correlated color temperature might fall within a range of 2500 to 4000 K.
  • a white lighting device having the correlated color temperature falling within a range of 2500 to 4000 K was fabricated in the same manner as in the example 4 except that, as shown in Table 5, a near-ultraviolet light-emitting diode having an emission peak wavelength of 400 nm was used and red phosphor powder having a different composition was used.
  • a white lighting device having the correlated color temperature falling within a range of 4000 to 5000 K was fabricated in the same manner as in the example 1 except that, as shown in Table 6, the mixing ratios of the respective color phosphors were changed so that the mixing ratio of the red phosphor powder to the blue-green phosphor powder might become 35 or so.
  • a white lighting device was fabricated in the same manner as in the example 1 except that, as shown in Table 7, the mixing ratios of the respective color phosphors were changed so that the correlated color temperature might fall within a range of 2500 to 4000 K and the mixing ratio of the red phosphor powder to the blue-green phosphor powder might become 50 or so.
  • a white lighting device was fabricated in the same manner as in the example 1 except that, as shown in Table 8, a near-ultraviolet light-emitting diode having an emission peak wavelength of 395 nm was used and only red phosphor powder, blue phosphor powder, and yellow phosphor powder were compounded so that the correlated color temperature might become 4000 to 5000 K.
  • a white lighting device was fabricated in the same manner as in the comparative example 1 except that, as shown in Table 9, a near-ultraviolet light-emitting diode having an emission peak wavelength of 405 nm was used and the red phosphor powder, the blue phosphor powder, and the yellow phosphor powder were compounded so that the correlated color temperature might exceed 5000 K.
  • a white lighting device was fabricated in the same manner as in the comparative example 1 except that, as shown in Table 10, a near-ultraviolet light-emitting diode having an emission peak wavelength of 400 nm was used and the red phosphor powder, the blue phosphor powder, and the yellow phosphor powder were compounded so that the correlated color temperature might exceed 6000 K.
  • a white lighting device was fabricated in the same manner as in the comparative example 1 except that, as shown in Table 11, a near-ultraviolet light-emitting diode having an emission peak wavelength of 405 nm was used and the red phosphor powder, the blue phosphor powder, and the yellow phosphor powder were compounded so that the correlated color temperature might is less than 3000 K.
  • the white lighting device having the correlated color temperature in excess of 5000 K can obtain the average color rendering index Ra and the special color rendering index R9 each being 90 or more (the comparative examples 2 and 3).
  • the white lighting device having the correlated color temperature of 5000 K or less can obtain the average color rendering index Ra of 90 or more, but cannot obtain the special color rendering index R9 in excess of 50 (the comparative examples 1 and 4).
  • the white lighting devices in the examples each using the blue-green phosphor powder together having the ratio of the content of the red phosphor powder to the content of the blue-green phosphor powder set to fall within a predetermined range, and having the correlated color temperature of 5000 K or less can obtain the average color rendering index Ra and the special color rendering index R9 each being 90 or more.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

According to the embodiment, a white lighting device includes a semiconductor light-emitting element emitting near-ultraviolet light, and a phosphor layer containing at least a blue-green phosphor emitting blue-green light and a red phosphor emitting red light and emits white light having a correlated color temperature of 5000 K or less and a deviation duv from a blackbody locus of not less than −0.01 nor more than 0.01, in which a ratio of a content of the red phosphor to a content of the blue-green phosphor in the phosphor layer by mass is not less than 35 nor more than 50.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of prior International Application No. PCT/JP2011/001338 filed on Mar. 7, 2011, which is based upon and claims the benefit of priority from Japanese Patent Application No. 2010-055888 filed on Mar. 12, 2010; the entire contents of all of which are incorporated herein by reference.
FIELD
Embodiments described herein relate generally to a white lighting device.
BACKGROUND ART
In recent years, a high efficiency white lighting device in which a semiconductor light-emitting element such as a light-emitting diode (LED) and a phosphor to emit light by being excited with light emitted from the semiconductor light-emitting element are combined has been commercialized. Such a white lighting device using the semiconductor light-emitting element is high efficiency as compared with a conventional white lighting device such as an incandescent lamp or a fluorescent lamp to thus greatly contribute to saving of energy.
Incidentally, in applications of special lighting such as medical lighting, lighting for jewelry goods, lighting for foods, and lighting for photographing, which is necessary to be close to the visibility of colors under natural light, it is required to have a high color rendering property, but the white lighting device using the semiconductor light-emitting element does not necessarily have a sufficient color rendering property. By improving the color rendering property of the white lighting device using the semiconductor light-emitting element, the use of the white lighting device using the semiconductor light-emitting element is made possible even in the applications of special lighting to make it possible to greatly contribute to saving of energy.
As a method of specifying such a color rendering property, an average color rendering index Ra and special color rendering indexes R9 to R15 are cited. When the average color rendering index Ra and the special color rendering indexes R9 to R15 are each close to 100, the color rendering property becomes suitable in the applications of special lighting. Particularly, the special color rendering index R9 is to specify the visibility of red, and it is said that as the special color rendering index R9 is close to 100, the expressiveness of red is high.
In the color rendering method in JIS, lamps called a high color rendering type are classified into three ranks of color rendering A, color rendering AA, and color rendering AAA. In order to substitute the white lighting device using the semiconductor light-emitting element for the lamps with color rendering AA and more among them, the average color rendering index Ra is required to be about 85 or more, and is more preferably required to be 90 or more. Further, in order to express red with good reproducibility, the special color rendering index R9 is required to be about 85 or more, and is more preferably required to be 90 or more.
The white lighting devices each using the above-described semiconductor light-emitting element, particularly a light-emitting diode, are roughly classified into ones each using a blue light-emitting diode emitting blue light and ones each using a near-ultraviolet light-emitting diode emitting ultraviolet light.
As the white lighting devices each using the blue light-emitting diode among them, one combined with a yellow phosphor, and one combined with a green phosphor and a red phosphor are cited. However, the one combined with the yellow phosphor has difficulty in obtaining the average color rendering index Ra of 85 or more, and has difficulty in being used in the applications of special lighting. Further, the one combined with the green phosphor and the red phosphor can obtain the average color rendering index Ra or 85 or more, but has difficulty in obtaining the special color rendering index R9 of 85 or more and has difficulty in being used in the applications of special lighting.
On the other hand, as the white lighting devices each using the near-ultraviolet light-emitting diode, one combined with a blue phosphor, a green phosphor, and a red phosphor, and one combined with a blue phosphor, a red phosphor, and a yellow phosphor in place of the green phosphor have been known. According to the white lighting devices as above, the one having a correlated color temperature in excess of 5000 K can obtain the average color rendering index Ra and the special color rendering index R9 that are 85 or more, and can be used in the applications of special lighting. However, the white lighting device having the correlated color temperature of 5000 K or less has difficulty in obtaining the average color rendering index Ra and the special color rendering index R9 that are 85 or more, and particularly has difficulty in obtaining the special color rendering index R9 of 85 or more, and has difficulty in being used in the applications of special lighting.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional view showing one example of a white lighting device in an embodiment.
FIG. 2 is a view showing an emission spectrum of a white lighting device in an example 1.
 DETAILED DESCRIPTION
A white lighting device in an embodiment includes: a semiconductor light-emitting element emitting near-ultraviolet light; and a phosphor layer containing a blue-green phosphor having an emission peak in a wavelength region of not less than 480 nm nor more than 520 nm, a red phosphor having an emission peak in a wavelength region of not less than 585 nm nor more than 630 nm, and two or more phosphors each having an emission peak in a wavelength region other than the wavelength regions. The white lighting device in the embodiment emits white light having a correlated color temperature of 5000 K or less and a deviation duv from a blackbody locus of not less than −0.01 nor more than 0.01. The white lighting device in the embodiment has a ratio of a content of the red phosphor to a content of the blue-green phosphor in the phosphor layer by mass of not less than 35 nor more than 50.
Hereinafter, a white lighting device in an embodiment will be specifically explained. The white lighting device in the embodiment includes a semiconductor light-emitting element emitting near-ultraviolet light, and a phosphor layer containing a blue-green phosphor having an emission peak in a wavelength region of not less than 480 nm nor more than 520 nm, a red phosphor having an emission peak in a wavelength region of not less than 585 nm nor more than 630 nm, and two or more phosphors each having an emission peak in a wavelength region other than the above wavelength regions and emits white light having a correlated color temperature of 5000 K or less and a deviation duv from a blackbody locus of not less than −0.01 nor more than 0.01, in which a ratio of a content of the red phosphor to a content of the blue-green phosphor in the phosphor layer by mass is not less than 35 nor more than 50.
FIG. 1 is a cross-sectional view showing one example of the white lighting device in the embodiment. A white lighting device 1 includes a semiconductor light-emitting element (chip) 2 as an excitation source (light source). The semiconductor light-emitting element 2 is to emit near-ultraviolet light, and specifically is to emit light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm, preferably not less than 380 nm nor more than 410 nm. As the semiconductor light-emitting element 2, for example, an ultraviolet light-emitting diode, a violet light-emitting diode, an ultraviolet light-emitting laser (laser diode), a violet light-emitting laser (laser diode), or the like is used. As the light-emitting diode among them, for example, a light-emitting diode based on InGaN, GaN, AlGaN, or the like is used.
The semiconductor light-emitting element 2 as above and later-described phosphors are combined, thereby making it possible to fabricate the white lighting device 1 that has the correlated color temperature of 5000 K or less, has a sufficiently high average color rendering index Ra and a sufficiently high special color rendering index R9, and is suitably used for medical lighting, lighting for jewelry goods, lighting for foods, lighting for photographing, and so on.
The semiconductor light-emitting element 2 is mounted on a substrate 3. As the substrate 3, a wiring substrate having a wiring network on its surface and in its inside is used. Although illustration is omitted, electrodes of the semiconductor light-emitting element 2 and the wiring networks of the wiring substrate 3 are electrically connected, and thereby a direct-current voltage is applied to the semiconductor light-emitting element 2.
The semiconductor light-emitting element 2 is covered with a transparent resin layer 4 in order to improve light use efficiency. The transparent resin layer 4 is formed into, for example, a hemispherical shape covering the whole of the semiconductor light-emitting element 2 as illustrated in FIG. 1, but is only needed to be formed so as to cover at least a light-emitting surface of the semiconductor light-emitting element 2. Incidentally, as for the white lighting device 1 in the embodiment, the transparent resin layer 4 is not necessarily needed to be provided, and a later-described phosphor layer 5 may also be directly formed on the semiconductor light-emitting element 2.
On the transparent resin layer 4 covering the semiconductor light-emitting element 2, the phosphor layer 5 is formed. The phosphor layer 5 is that a phosphor 7 for obtaining white light is dispersed in a resin 6 having transparency. The phosphors 7 are to emit white light all together by being excited by light radiated from the semiconductor light-emitting element 2. The transparent resin that forms the transparent resin layer 4 and the phosphor layer 5 is made of a resin having transparency such as, for example, a silicone resin or an epoxy resin.
The phosphors 7 for obtaining white light are constituted by containing at least a blue-green phosphor that absorbs light (for example, ultraviolet light or violet light) radiated from the semiconductor light-emitting element 2 to emit blue-green light and a red phosphor that absorbs light radiated from the semiconductor light-emitting element 2 to emit red light. That is, the phosphors 7 are mixed phosphors that contain at least the blue-green phosphor and the red phosphor. Normally, the phosphors 7 are formed of not only the above-described blue-green phosphor and red phosphor but also a blue phosphor that absorbs light radiated from the semiconductor light-emitting element 2 to emit blue light and a yellow phosphor that absorbs light radiated from the semiconductor light-emitting element 2 to emit yellow light.
The blue-green phosphor is to be excited with light emitted from the semiconductor light-emitting element 2 to emit light having an emission peak in a wavelength region of not less than 480 nm nor more than 520 nm. Similarly, the red phosphor is to emit light having an emission peak in a wavelength region of not less than 585 nm nor more than 630 nm, the blue phosphor is to have an emission peak in a wavelength region of not less than 440 nm nor more than 460 nm, and the yellow phosphor is to have an emission peak in a wavelength region of not less than 525 nm nor more than 575 nm.
The respective color phosphors forming the phosphors 7, namely the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor may each be made of one type of phosphor, or may also each be made of two types or more of phosphors. Further, the phosphors 7 may also subsidiarily contain a phosphor having an emission color other than the above colors, for example, an orange phosphor, a deep red phosphor, or the like. It is also possible that these blue-green phosphor, red phosphor, blue phosphor, and yellow phosphor are dispersed in the phosphor layer 5 in a state of being previously bound by a binder.
Electric energy applied to the white lighting device 1 is converted into ultraviolet light or violet light by the semiconductor light-emitting element 2. The light emitted from the semiconductor light-emitting element 2 is converted into longer-wavelength light by the phosphors 7 dispersed in the phosphor layer 5. Then, lights emitted from the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor that form the phosphors 7 are mixed to be emitted, and thereby white light is emitted all together.
The white lighting device 1 in the embodiment uses the phosphors containing at least the blue-green phosphor and the red phosphor as the phosphors 7, and the ratio (the content of the red phosphor/the content of the blue-green phosphor) of the content of the red phosphor to the content of the blue-green phosphor in the phosphor layer 5 (phosphors 7) by mass is set to be not less than 35 nor more than 50. It is set in this manner, and thereby it is possible to fabricate the white lighting device 1 that emits white light having the correlated color temperature of 5000 K or less and the deviation duv from the blackbody locus of not less than −0.01 nor more than 0.01, and to make the average color rendering index Ra and the special color rendering index R9 sufficiently high.
In a conventional combination of phosphors, namely a combination of a red phosphor, a blue phosphor, and a green phosphor, or a combination of a red phosphor, a blue phosphor, and a yellow phosphor, it is possible for one having the correlated color temperature in excess of 5000 K to obtain the sufficient average color rendering index Ra and special color rendering index R9, but it is not necessarily possible for one having the correlated color temperature of 5000 K or less to obtain the sufficient special color rendering index R9. The special color rendering index R9 is a color rendering index for red, and can be improved by increasing the content of a red phosphor, but when the content of a red phosphor is simply increased, the correlated color temperature is likely to be reddish rather than the targeted correlated color temperature.
In the white lighting device 1 in the embodiment, the blue-green phosphor emitting blue-green light, which is a complementary color of red light, is used together, thereby making it possible to increase the content of the red phosphor more than conventionally while suppressing a change from the targeted correlated color temperature. Thereby, for one having the correlated color temperature of 5000 K or less and the deviation duv from the blackbody locus of not less than −0.01 nor more than 0.01, it is possible to obtain the average color rendering index Ra and the special color rendering index R9 that are, for example, 85 or more and more preferably the average color rendering index Ra and the special color rendering index R9 that are 90 or more.
As long as the correlated color temperature is 5000 K or less, it is not necessarily limited, but the correlated color temperature is normally 2600 K or more. Incidentally, the correlated color temperature and the deviation duv from the blackbody locus are specified based on the specification method disclosed in JIS Z8725. Further, the average color rendering index Ra and the special color rendering index R9 are specified based on the method of specifying color rendering properties disclosed in JIS Z8726.
When the ratio of the content of the red phosphor to the content of the blue-green phosphor is less than 35, there is a risk that the sufficiently high special color rendering index R9, which is, for example, 85 or more, cannot be obtained. On the other hand, when the ratio of the content of the red phosphor to the content of the blue-green phosphor exceeds 50, the sufficiently high special color rendering index R9 can be obtained, but the correlated color temperature is likely to be reddish.
The ratio of the content of the red phosphor to the total content of the phosphors 7, namely the total content of the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor differs according to the targeted correlated color temperature, average color rendering index Ra and special color rendering index R9, and the content ratio of the red phosphor to the blue-green phosphor, but is preferably not less than 45 mass % nor more than 85%, and is more preferably not less than 50 mass % nor more than 80 mass %.
When the ratio of the content of the red phosphor to the total content of the phosphors 7 is less than 45 mass %, there is a risk that the sufficiently high special color rendering index R9 cannot be obtained. On the other hand, when the ratio of the content of the red phosphor to the total content of the phosphors 7 exceeds 85 mass %, the sufficiently high special color rendering index R9 can be obtained, but the correlated color temperature is likely to be reddish.
The ratio of the content of the blue phosphor to the total content of the phosphors 7 and the ratio of the content of the yellow phosphor to the total content of the phosphors 7 also differ according to the targeted correlated color temperature and the like, but the ratio of the content of the blue phosphor is preferably, for example, not less than 10 mass % nor more than 50 mass % and is more preferably not less than 15 mass % nor more than 45 mass %. Further, the ratio of the content of the yellow phosphor is preferably, for example, not less than 1 mass % nor more than 10 mass % and is more preferably not less than 1 mass % nor more than 7 massa.
As long as the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor each efficiently absorb ultraviolet light or violet light radiated from the semiconductor light-emitting element 2 to emit light having an emission peak in the above-described wavelength region, they are not necessarily limited, but if there is a large illuminance difference among the respective colors, white light in which the color with high illuminance strongly appears is likely to be produced, and further in order to improve the color rendering property of white light, there is a need to enhance a balance of the respective colors. For this reason, as the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor that form the phosphors 7, ones described below are preferably used in a combined manner.
As the blue-green phosphor, there is suitably used a europium-activated barium strontium orthosilicate phosphor having a composition represented by a general formula:
(Ba1-x-ySrxEuy)2SiO4  (1)
(in the formula, x is a number satisfying 0≦x<0.5 and y is a number satisfying 0.005≦y<0.25).
The europium-activated barium strontium orthosilicate phosphor represented by the general formula (1) as the blue-green phosphor is excellent in absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm and can efficiently emit blue-green light being a complementary color for red. This makes it possible to increase the content of the red phosphor to effectively improve the special color rendering index R9 while suppressing that the correlated color temperature becomes reddish.
As the red phosphor, there is suitably used a europium-activated lanthanum oxysulfide phosphor having a composition represented by a general formula:
(La1-x-yEuxMy)2O2S  (2)
(in the formula, M represents at least one type selected from Sm, Ga, Sb, and Sn, and x and y are numbers satisfying 0.008≦x<0.16 and 0.000001≦y<0.003).
The europium-activated lanthanum oxysulfide phosphor represented by the general formula (2) as the red phosphor is excellent in absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm, and is also excellent in combination with the europium-activated barium strontium orthosilicate phosphor represented by the general formula (1) as the blue-green phosphor.
As the blue phosphor, there is suitably used a europium-activated alkaline earth chlorophosphate phosphor having a composition represented by a general formula:
(Sr1-x-y,BaxCayEuz)5(PO4)3Cl  (3)
(in the formula, x, y, and z are numbers satisfying 0≦x<0.45, 0≦y<0.03, and 0.005≦z<0.03).
The europium-activated alkaline earth chlorophosphate phosphor represented by the general formula (3) as the blue phosphor is also excellent in absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm, and is also excellent in combination with the europium-activated barium strontium orthosilicate phosphor represented by the general formula (1) as the blue-green phosphor.
Incidentally, as the blue phosphor, it is also possible to use a europium-activated aluminate phosphor having a composition represented by a general formula:
(Ba1-x-y-zSrxCayEuz)MgAl10O17  (3′)
(in the formula: x, y, and z are numbers satisfying 0≦x<0.1, 0≦y<0.1, and 0.005≦z<0.4).
As the yellow phosphor, there is suitably used a europium and manganese-activated alkaline earth magnesium silicate phosphor having a composition represented by a general formula:
(Sr1-x-y-z-uBaxMgyEuzMnu)2SiO4  (4)
(in the formula, x, y, z, and u are numbers satisfying 0.1≦x<0.35, 0.025≦y<0.105, 0.025≦z<0.25, and 0.0005≦u<0.02).
The europium and manganese-activated alkaline earth magnesium silicate phosphor represented by the general formula (4) as the yellow phosphor is excellent in absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm as described also in International Publication Pamphlet No. 2008/096545, for example, and further as compared with a conventional yellow phosphor, has a high emission intensity in a range of not less than 600 nm nor more than 700 nm, and can effectively supplement the red light emission. Further, it has a sub-peak in the proximity of 450 nm, thereby being able to supplement also the blue light emission. This makes it possible to make white light excellent in luminance and color rendering property.
The above-described respective color phosphors, namely the blue-green phosphor, the red phosphor, the blue phosphor, and the yellow phosphor each preferably have an average particle diameter of not less than 5 μm nor more than 80 μm. Incidentally, the average particle diameter is set to represent a median (50% value) of particle size distribution. The average particle diameter of the respective color phosphors is set to be not less than 5 μm nor more than 80 μm, thereby making it possible to improve the absorbency of ultraviolet light or violet light having an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm that is emitted from the semiconductor light-emitting element 2 to fabricate the white lighting device 1 having high luminance.
The transparent resin layer 4 preferably has, for example, thickness on the light emitting surface of the semiconductor light-emitting element 2 of not less than 0.4 mm nor more than 10 mm. The thickness of the transparent resin layer 4 is set to 0.4 mm or more, thereby making it possible to effectively improve the light use efficiency. When the thickness of the transparent resin layer 4 exceeds 10 mm, there is a risk that light absorption occurs. Even though the size in the case when the white lighting device 1 is used as a lighting apparatus is considered, the thickness of the transparent resin layer 4 is preferably 10 mm or less.
The thickness of the transparent resin layer 4 is preferably 0.8 mm or more, and further is preferably 1 mm or more. Further, in the case when the transparent resin layer 4 is formed into a hemispherical shape as shown in FIG. 1, the radius of the hemispherical portion is preferably set to be not less than 0.4 mm nor more than 10 mm. Further, the thickness of the phosphor layer formed on the transparent resin layer 4 as above is preferably not less than 0.1 mm nor more than 2.0 mm.
The white lighting device 1 in the embodiment can be fabricated as follows, for example. First, a phosphor slurry containing respective color phosphor powders is prepared. The phosphor slurry can be prepared by, for example, mixing the respective color phosphor powders with resins, respectively, and then mixing the mixtures. Incidentally, the phosphor slurry can also be prepared by previously mixing the respective color phosphor powders, and then mixing the above mixed phosphor powder with the resin.
The mixing ratio of the phosphor powder and the resin can be appropriately selected according to the type and the particle diameter of the phosphor powder, and the resin is preferably set to be not less than 5 parts by mass nor more than 100 parts by mass with respect to 100 parts by mass of the phosphor powder, for example. Incidentally, the mixing ratios of the respective color phosphor powders are preferably adjusted to the ratios of the contents as have been already explained. The mixture of the phosphor powder and the resin can be performed with, for example, a well-known stirrer.
Next, a liquid transparent resin is applied on the semiconductor light-emitting element 2, and is solidified to form the transparent resin layer 4. The phosphor slurry is applied on the layer, and the resin in the phosphor slurry is solidified to form the phosphor layer 5. In this manner, the white lighting device 1 can be fabricated.
The application of the transparent resin and the phosphor slurry can be performed in a manner that, for example, the wiring substrate 3 on which the semiconductor light-emitting element 2 is mounted is put into a mold, and from the above, the transparent resin and the phosphor slurry are supplied with a dispenser. Further, the application of the transparent resin and the phosphor slurry can also be performed by, for example, a printing method, an injection molding method, or the like. When a thermosetting resin is used as the transparent resin and the resin in the phosphor slurry, the transparent resin and the phosphor slurry are applied and then cured by being heated in an oven or the like at a temperature of 100 to 200° C., and thereby the transparent resin layer 4 and the phosphor layer 5 can be formed.
The white lighting device 1 in the embodiment is to emit white light having the correlated color temperature of 5000 K or less and the deviation duv from the blackbody locus of not less than −0.01 nor more than 0.01 and have, for example, the high average color rendering index Ra and special color rendering index R9 each being 85 or more. The white lighting device 1 as above has the sufficiently high average color rendering index Ra and special color rendering index R9, and thus can be suitably used for medical lighting, lighting for jewelry goods, lighting for foods, lighting for photographing, and so on, and can greatly contribute to their saving of energy.
Next, specific examples of the white lighting device in the embodiment and evaluation results thereof will be explained.
Example 1
As the white lighting device, a white lighting device as shown in FIG. 1 was fabricated. First, blue-green phosphor powder, red phosphor powder, blue phosphor powder, and yellow phosphor powder having compositions and average particle diameters as shown in Table 1 were used and were compounded so as to have mixing ratios shown in Table 1 and were mixed to make mixed phosphor powder. 60 parts by mass of a silicone resin was mixed in 40 parts by mass of the above mixed phosphor powder to prepare a phosphor slurry to be the phosphor layer 5.
Next, on a near-ultraviolet light-emitting diode (peak wavelength: 405 nm, chip size: 0.3 mm×0.3 mm×0.1 mm t) as the semiconductor light-emitting element 2, a silicone resin to be the transparent resin layer 4 was applied and then the above-described phosphor slurry was applied. This was heat-treated at a temperature of 140° C. to cure the silicone resin, and thereby the white lighting device emitting white light having the correlated color temperature of 4000 to 5000 K and the deviation duv from the blackbody locus of not less than −0.01 nor more than 0.01 was fabricated. Incidentally, the transparent resin layer was formed into a hemispherical shape, and the radius was set to 0.8 mm. Further, the thickness of the phosphor layer was set to 0.5 mm.
TABLE 1
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 405 nm]
[COMPOUNDING RATIO OF RED PHOSPHOR POWDER TO
BLUE-GREEN PHOSPHOR POWDER BY MASS 41.5]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE PHOSPHOR (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 42.5 12
BLUE-GREEN (Ba0.6Sr0.3Eu0.1)2SiO4 1.3 15
PHOSPHOR
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 2.3 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sm0.002)2O2S 53.9 12
Example 2
A white lighting device having the correlated color temperature falling within a range of 4000 to 5000 K was fabricated in the same manner as in the example 1 except that, as shown in Table 2, a near-ultraviolet light-emitting diode having an emission peak wavelength of 400 nm was used and red phosphor powder having a different composition was used.
TABLE 2
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 400 nm]
[COMPOUNDING RATIO OF RED PHOSPHOR POWDER TO
BLUE-GREEN PHOSPHOR POWDER
BY MASS 41.5]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE PHOSPHOR (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 42.5 12
BLUE-GREEN (Ba0.6Sr0.3Eu0.1)2SiO4 1.3 15
PHOSPHOR
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 2.3 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Ga0.002)2O2S 53.9 12
Example 3
A white lighting device having the correlated color temperature falling within a range of 4000 to 5000 K was fabricated in the same manner as in the example 1 except that, as shown in Table 3, a near-ultraviolet light-emitting diode having an emission peak wavelength of 395 nm was used and red phosphor powder having a different composition was used.
TABLE 3
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 395 nm]
[COMPOUNDING RATIO OF RED PHOSPHOR POWDER TO
BLUE-GREEN PHOSPHOR POWDER BY MASS 41.5]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 42.5 12
PHOSPHOR
BLUE-GREEN (Ba0.6Sr0.3Eu0.1)2SiO4 1.3 15
PHOSPHOR
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 2.3 15
PHOSPHOR
RED (La0.938Eu0.06Sb0.002)2O2S 53.9 12
PHOSPHOR
Example 4
A white lighting device was fabricated in the same manner as in the example 1 except that, as shown in Table 4, the mixing ratios of the respective color phosphor powders were changed so that the correlated color temperature might fall within a range of 2500 to 4000 K.
TABLE 4
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 405 nm]
[COMPOUNDING RATIO OF RED PHOSPHOR POWDER TO
BLUE-GREEN PHOSPHOR POWDER BY MASS 42.8]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE PHOSPHOR (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 17.2 12
BLUE-GREEN (Ba0.6Sr0.3Eu0.1)2SiO4 1.8 15
PHOSPHOR
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 4 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sm0.002)2O2S 77 12
Example 5
A white lighting device having the correlated color temperature falling within a range of 2500 to 4000 K was fabricated in the same manner as in the example 4 except that, as shown in Table 5, a near-ultraviolet light-emitting diode having an emission peak wavelength of 400 nm was used and red phosphor powder having a different composition was used.
TABLE 5
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 400 nm]
[COMPOUNDING RATIO OF RED PHOSPHOR POWDER TO
BLUE-GREEN PHOSPHOR POWDER BY MASS 42.8]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 17.2 12
PHOSPHOR
BLUE-GREEN (Ba0.6Sr0.3Eu0.1)2SiO4 1.8 15
PHOSPHOR
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 4 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sn0.002)2O2S 77 12
Example 6
A white lighting device having the correlated color temperature falling within a range of 4000 to 5000 K was fabricated in the same manner as in the example 1 except that, as shown in Table 6, the mixing ratios of the respective color phosphors were changed so that the mixing ratio of the red phosphor powder to the blue-green phosphor powder might become 35 or so.
TABLE 6
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 405 nm]
[COMPOUNDING RATIO OF RED PHOSPHOR POWDER TO
BLUE-GREEN PHOSPHOR POWDER BY MASS 35.9]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 42.5 12
PHOSPHOR
BLUE-GREEN (Ba0.6Sr0.3Eu0.1)2SiO4 1.5 15
PHOSPHOR
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 2.1 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sm0.002)2O2S 53.9 12
Example 7
A white lighting device was fabricated in the same manner as in the example 1 except that, as shown in Table 7, the mixing ratios of the respective color phosphors were changed so that the correlated color temperature might fall within a range of 2500 to 4000 K and the mixing ratio of the red phosphor powder to the blue-green phosphor powder might become 50 or so.
TABLE 7
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 405 nm]
[COMPOUNDING RATIO OF RED PHOSPHOR POWDER TO
BLUE-GREEN PHOSPHOR POWDER BY MASS 48.9]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE PHOSPHOR (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 16.2 12
BLUE-GREEN (Ba0.6Sr0.3Eu0.1)2SiO4 1.6 15
PHOSPHOR
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 4.2 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sm0.002)2O2S 78 12
Comparative Example 1
A white lighting device was fabricated in the same manner as in the example 1 except that, as shown in Table 8, a near-ultraviolet light-emitting diode having an emission peak wavelength of 395 nm was used and only red phosphor powder, blue phosphor powder, and yellow phosphor powder were compounded so that the correlated color temperature might become 4000 to 5000 K.
TABLE 8
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 395 nm]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE PHOSPHOR (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 47.5 12
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 2.8 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sm0.002)2O2S 49.7 12
Comparative Example 2
A white lighting device was fabricated in the same manner as in the comparative example 1 except that, as shown in Table 9, a near-ultraviolet light-emitting diode having an emission peak wavelength of 405 nm was used and the red phosphor powder, the blue phosphor powder, and the yellow phosphor powder were compounded so that the correlated color temperature might exceed 5000 K.
TABLE 9
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 405 nm]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE PHOSPHOR (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 52.2 12
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 2.8 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sm0.002)2O2S 45 12
Comparative Example 3
A white lighting device was fabricated in the same manner as in the comparative example 1 except that, as shown in Table 10, a near-ultraviolet light-emitting diode having an emission peak wavelength of 400 nm was used and the red phosphor powder, the blue phosphor powder, and the yellow phosphor powder were compounded so that the correlated color temperature might exceed 6000 K.
TABLE 10
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 400 nm]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE PHOSPHOR (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 56.5 12
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 2.8 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sm0.002)2O2S 40.7 12
Comparative Example 4
A white lighting device was fabricated in the same manner as in the comparative example 1 except that, as shown in Table 11, a near-ultraviolet light-emitting diode having an emission peak wavelength of 405 nm was used and the red phosphor powder, the blue phosphor powder, and the yellow phosphor powder were compounded so that the correlated color temperature might is less than 3000 K.
TABLE 11
[NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE 405 nm]
AVERAGE
PARTICLE
MIXING RATIO DIAMETER
COMPOSITION (PART BY MASS) (μm)
BLUE PHOSPHOR (Sr0.59Ba0.39Ca0.01Eu0.01)5(PO4)3Cl 27 12
YELLOW (Sr0.7Ba0.15Mg0.0975Eu0.05Mn0.0025)2SiO4 4 15
PHOSPHOR
RED PHOSPHOR (La0.938Eu0.06Sm0.002)2O2S 69 12
Next, 300 mA current was passed through each of the white lighting devices of the examples and the comparative examples to light them, and the evaluation of a light emitting property was performed. In Table 12, the evaluation results of a luminance flux, a chromaticity coordinate value, and the like of the white lighting device in the example 1 are shown. Further, an emission spectrum of the white lighting device in the example 1 is shown in FIG. 2. Further, in Table 13, there are collectively shown the evaluation results of a color temperature (the correlated color temperature), the deviation duv (deviation duv from the blackbody locus), light emission efficiency, the average color rendering index Ra, and the special color rendering index R9 of the white lighting device of each of the examples and comparative examples. Incidentally, the evaluations were performed by using CAS140 COMPACT ARRAY SPECTROMETER manufactured by Instrument Systems and an MCPD apparatus manufactured By Otsuka Electronics Co., Ltd.
TABLE 12
ITEM SYMBOL CONDITION RESULT UNIT
FORWARD VOLTAGE Vf If = 300 mA 3.4 V
LUMINOUS FLUX φv If = 300 mA 49.5 lm
CHROMATICITY x If = 300 mA 0.373 —
COORDINATE BASED y If = 300 mA 0.375 —
ON CIE1931
COLOR — If = 300 mA 4185 K
TEMPERATURE
TABLE 13
LIGHT AVERAGE SPECIAL RED/BLUE-
COLOR EMISSION COLOR COLOR GREEN
TEMPERATURE DEVIATION EFFICIENCY RENDERING RENDERING COMPOUNDING
(K) duv (lm/W) INDEX Ra INDEX R9 RATIO※
EXAMPLE 1 4185 −0.0020 67.5 94.2 91 41.5
EXAMPLE 2 4229 −0.0015 66.2 94.0 92 41.5
EXAMPLE 3 4231 0.0011 68.2 94.1 91 41.5
EXAMPLE 4 2810 0.0008 59.2 93.1 92 42.8
EXAMPLE 5 2805 0.0019 56.4 92.9 91 42.8
EXAMPLE 6 4600 0.0051 68.5 90.4 90 35.9
EXAMPLE 7 3010 0.0045 59.4 90.2 90 48.9
COMPARATIVE 4220 −0.0012 65.9 92.9 41 —
EXAMPLE 1
COMPARATIVE 5800 −0.0023 66.5 94.6 90 —
EXAMPLE 2
COMPARATIVE 6500 −0.0025 66.5 93.9 92 —
EXAMPLE 3
COMPARATIVE 2958 0.0010 58.2 95.0 48 —
EXAMPLE 4
※COMPOUNDING RATIO OF RED PHOSPHOR POWDER TO BLUE-GREEN PHOSPHOR POWDER BY MASS
As is clear from Table 13, it is found that even in the case of only the red phosphor powder, the blue phosphor powder, and the yellow phosphor powder being used, the white lighting device having the correlated color temperature in excess of 5000 K can obtain the average color rendering index Ra and the special color rendering index R9 each being 90 or more (the comparative examples 2 and 3). However, it is found that the white lighting device having the correlated color temperature of 5000 K or less can obtain the average color rendering index Ra of 90 or more, but cannot obtain the special color rendering index R9 in excess of 50 (the comparative examples 1 and 4).
On the other hand, it is found that the white lighting devices in the examples each using the blue-green phosphor powder together, having the ratio of the content of the red phosphor powder to the content of the blue-green phosphor powder set to fall within a predetermined range, and having the correlated color temperature of 5000 K or less can obtain the average color rendering index Ra and the special color rendering index R9 each being 90 or more.
In the foregoing, while certain embodiments of the present invention have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel methods described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.

Claims (10)

What is claimed is:
1. A white lighting device, comprising:
a semiconductor light-emitting element emitting near-ultraviolet light; and
a phosphor layer containing a blue-green phosphor having an emission peak in a wavelength region of not less than 480 nm nor more than 520 nm, a red phosphor having an emission peak in a wavelength region of not less than 585 nm nor more than 630 nm, and two or more phosphors each having an emission peak in a wavelength region other than the wavelength regions and emits white light having a correlated color temperature of 5000 K or less and a deviation duv from a blackbody locus of not less than −0.01 nor more than 0.01,
wherein a ratio of a content of the red phosphor to a content of the blue-green phosphor in the phosphor layer by mass is not less than 35 nor more than 50.
2. The white lighting device according to claim 1,
wherein the blue-green phosphor is made of a europium-activated barium strontium orthosilicate phosphor having a composition represented by a general formula:

(Ba1-x-ySrxEuy)2SiO4  (1)
where, x is a number satisfying 0≦x<0.5 and y is a number satisfying 0.005≦y<0.25.
3. The white lighting device according to claim 1,
wherein the red phosphor is made of a europium-activated lanthanum oxysulfide phosphor having a composition represented by a general formula:

(La1-x-yEuxMy)2O2S  (2)
where, M represents at least one element selected from Sm, Ga, Sb, and Sn, and x and y are numbers satisfying 0.008≦x<0.16 and 0.000001≦y<0.003.
4. The white lighting device according to claim 1,
wherein an average color rendering index Ra of the white light is equal to or more than 85 and a special color rendering index R9 of the white light is equal to or more than 85.
5. The white lighting device according to claim 1,
wherein an average color rendering index Ra of the white light is equal to or more than 90 and a special color rendering index R9 of the white light is equal to or more than 90.
6. The white lighting device according to claim 1,
wherein the semiconductor light-emitting element has an emission peak in a wavelength region of not less than 360 nm nor more than 440 nm.
7. The white lighting device according to claim 1,
wherein the semiconductor light-emitting element is a light-emitting diode or a laser diode.
8. The white lighting device according to claim 1,
wherein the two or more phosphors are a blue phosphor having an emission peak in a wavelength region of not less than 440 nm nor more than 460 nm and a yellow phosphor having an emission peak in a wavelength region of not less than 525 nm nor more than 575 nm.
9. The white lighting device according to claim 8,
wherein the blue phosphor is made of a europium-activated alkaline earth chlorophosphate phosphor having a composition represented by a general formula:

(Sr1-x-y-zBaxCayEuz)5(PO4)3Cl  (3)
where, x, y, and z are numbers satisfying 0≦x<0.45, 0≦y<0.03, and 0.005≦z<0.03.
10. The white lighting device according to claim 8,
wherein the yellow phosphor is made of a europium and manganese-activated alkaline earth magnesium silicate phosphor having a composition represented by a general formula:

(Sr1-x-y-z-uBaxMgyEuzMnu)2SiO4  (4)
where, x, y, z and u are numbers satisfying 0.1≦x<0.35, 0.025≦y<0.105, 0.025≦z<0.25, and 0.0005≦u<0.02.
US13/609,845 2010-03-12 2012-09-11 White lighting device Active 2031-04-19 US8723412B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPP2010-055888 2010-03-12
JP2010055888 2010-03-12
PCT/JP2011/001338 WO2011111368A1 (en) 2010-03-12 2011-03-07 White light illumination device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/001338 Continuation WO2011111368A1 (en) 2010-03-12 2011-03-07 White light illumination device

Publications (2)

Publication Number Publication Date
US20130241394A1 US20130241394A1 (en) 2013-09-19
US8723412B2 true US8723412B2 (en) 2014-05-13

Family

ID=44563202

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/609,845 Active 2031-04-19 US8723412B2 (en) 2010-03-12 2012-09-11 White lighting device

Country Status (5)

Country Link
US (1) US8723412B2 (en)
EP (1) EP2546897B1 (en)
JP (1) JP5718895B2 (en)
CN (1) CN102792473B (en)
WO (1) WO2011111368A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SI4044264T1 (en) * 2011-10-24 2024-04-30 Seoul Semiconductor Co., Ltd. White light source and white light source system using white light source
CN104025321B (en) * 2011-10-24 2018-06-19 株式会社东芝 White light source and the white light source system including the white light source
JP2013191385A (en) * 2012-03-13 2013-09-26 Toshiba Lighting & Technology Corp Lighting device
DE102012210712A1 (en) 2012-06-25 2014-01-02 Carl Zeiss Smt Gmbh Method and cooling system for cooling an optical element for EUV applications
WO2014054290A1 (en) * 2012-10-04 2014-04-10 株式会社 東芝 White-light emitting device, lighting device, and lighting device for dentistry
JP6502669B2 (en) * 2012-11-30 2019-04-17 株式会社東芝 Medical light source and medical light source system using the same
JP2015211202A (en) * 2014-04-30 2015-11-24 株式会社東芝 Light-emitting device
CN106796976B (en) * 2014-10-08 2019-04-19 首尔半导体株式会社 Light emitting device
JP6528236B2 (en) * 2015-03-24 2019-06-12 株式会社ホタルクス Light source cover and lighting device
CN105700230B (en) * 2016-01-29 2018-11-20 京东方科技集团股份有限公司 Backlight, backlight module and display device
DE102017120642A1 (en) * 2017-09-07 2019-03-07 Osram Opto Semiconductors Gmbh Light-emitting diode, use of a light-emitting diode, method for operating a light-emitting diode and method for producing a light-emitting diode
US10879429B2 (en) * 2018-05-29 2020-12-29 Nichia Corporation Light emitting device
EP3628719A1 (en) * 2018-09-28 2020-04-01 Nichia Corporation Light emitting device and lighting fixture provided with the same

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040007961A1 (en) 2000-05-15 2004-01-15 General Electric Company White light emitting phosphor blends for LED devices
JP2007109837A (en) 2005-10-13 2007-04-26 Hitachi Ltd Lighting apparatus
US20070259206A1 (en) * 2004-04-27 2007-11-08 Matsushita Electric Industrial Co., Ltd. Phosphor Composition and Method for Producing the Same, and Light-Emitting Device Using the Same
JP2007332217A (en) 2006-06-13 2007-12-27 Sharp Corp Oxynitride phosphor and light emitting device
WO2008020541A1 (en) 2006-08-14 2008-02-21 Fujikura Ltd. Light emitting device and illumination device
US20080122343A1 (en) * 2006-11-28 2008-05-29 Dowa Electronics Materials Co., Ltd. Light-emitting device and manufacturing method thereof
WO2008096545A1 (en) 2007-02-09 2008-08-14 Kabushiki Kaisha Toshiba White light-emitting lamp and illuminating device using the same
JP2008187188A (en) 2004-04-27 2008-08-14 Matsushita Electric Ind Co Ltd Light emitting device
WO2009099234A1 (en) 2008-02-07 2009-08-13 Sharp Kabushiki Kaisha Light emitting device and manufacturing method of same
US8288937B2 (en) * 2008-05-30 2012-10-16 Kabushiki Kaisha Toshiba White LED, and backlight and liquid crystal display device using the same
US8482191B2 (en) * 2008-08-11 2013-07-09 Osram Gesellschaft Mit Beschraenkter Haftung Conversion LED

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW326096B (en) * 1995-08-24 1998-02-01 Matsushita Electric Ind Co Ltd Discharge lamp for general lighting services and lighting appliance for general lighting services
JP3749243B2 (en) * 2001-09-03 2006-02-22 松下電器産業株式会社 Semiconductor light emitting device, light emitting apparatus, and method for manufacturing semiconductor light emitting device
US6965193B2 (en) * 2002-12-12 2005-11-15 General Electric Company Red phosphors for use in high CRI fluorescent lamps
CN1227325C (en) * 2003-08-05 2005-11-16 北京大学 Violet light excitated bicomponent three basic colour fluorescent powder and its preparation method
JP4389513B2 (en) * 2003-08-08 2009-12-24 三菱化学株式会社 Light emitting device, lighting device, and image display device
JP4972904B2 (en) * 2005-10-03 2012-07-11 三菱化学株式会社 Phosphor, method for manufacturing the phosphor, light-emitting device using the phosphor, image display device, and illumination device
CN101118935A (en) * 2006-08-03 2008-02-06 黎涤萍 White light LED and lighting apparatus
CN100526422C (en) * 2007-11-12 2009-08-12 湖南信多利新材料有限公司 Rare earth aluminate cyan fluorescent powder used for high color rendering property energy-saving lamp and its preparation method and use
JP4881358B2 (en) * 2008-08-28 2012-02-22 株式会社東芝 Light emitting device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004501512A (en) 2000-05-15 2004-01-15 ゼネラル・エレクトリック・カンパニイ White light emitting phosphor blend for LED elements
US20040007961A1 (en) 2000-05-15 2004-01-15 General Electric Company White light emitting phosphor blends for LED devices
JP2008187188A (en) 2004-04-27 2008-08-14 Matsushita Electric Ind Co Ltd Light emitting device
US20070259206A1 (en) * 2004-04-27 2007-11-08 Matsushita Electric Industrial Co., Ltd. Phosphor Composition and Method for Producing the Same, and Light-Emitting Device Using the Same
JP2007109837A (en) 2005-10-13 2007-04-26 Hitachi Ltd Lighting apparatus
JP2007332217A (en) 2006-06-13 2007-12-27 Sharp Corp Oxynitride phosphor and light emitting device
WO2008020541A1 (en) 2006-08-14 2008-02-21 Fujikura Ltd. Light emitting device and illumination device
US20080122343A1 (en) * 2006-11-28 2008-05-29 Dowa Electronics Materials Co., Ltd. Light-emitting device and manufacturing method thereof
WO2008096545A1 (en) 2007-02-09 2008-08-14 Kabushiki Kaisha Toshiba White light-emitting lamp and illuminating device using the same
US20100322275A1 (en) 2007-02-09 2010-12-23 Kabushiki Kaisha Toshiba White light-emitting lamp and illuminating device using the same
WO2009099234A1 (en) 2008-02-07 2009-08-13 Sharp Kabushiki Kaisha Light emitting device and manufacturing method of same
US8288937B2 (en) * 2008-05-30 2012-10-16 Kabushiki Kaisha Toshiba White LED, and backlight and liquid crystal display device using the same
US8482191B2 (en) * 2008-08-11 2013-07-09 Osram Gesellschaft Mit Beschraenkter Haftung Conversion LED

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
"Methods for determining distribution temperature and color temperature or correlated color temperature of light sources", Z 8725, 1999, 42 pages.
International Preliminary Report on Patentability and Written Opinion issued Oct. 2, 2012 in PCT/JP2011/001338 filed on Mar. 7, 2011.
International Search Report mailed May 24, 2011 in PCT/JP2011/001338 filed Mar. 7, 2011 (with English Translation).
International Written Opinion mailed May 24, 2011 in PCT/JP2011/001338 filed Mar. 7, 2011.
Japanese Industrial Standard, "Method of Specifying Colour Rendering Properties of Light Sources", JIS Z 8726, UDC 535.665:628.981, 1990, 21 pages (in English).
Japanese Industrial Standard, "Method of Specifying Colour Rendering Properties of Light Sources", JIS Z 8726, UDC 535.665:628.981, 1990, 22 pages.
Japanese Industrial Standard, "Methods for determining distribution temperature and color temperature or correlated color temperature of ligth sources", JIS Z 8725, ICS 17.180.20, 1999, 44 pages (in Japanese).

Also Published As

Publication number Publication date
EP2546897B1 (en) 2019-01-23
CN102792473B (en) 2015-11-25
EP2546897A1 (en) 2013-01-16
JP5718895B2 (en) 2015-05-13
EP2546897A4 (en) 2016-03-23
CN102792473A (en) 2012-11-21
WO2011111368A1 (en) 2011-09-15
JPWO2011111368A1 (en) 2013-06-27
US20130241394A1 (en) 2013-09-19

Similar Documents

Publication Publication Date Title
US8723412B2 (en) White lighting device
CN108305929B (en) White light emitting device with high color rendering
CN111615753B (en) Adjustable light solid state light emitting device
US9954145B2 (en) White light apparatus with enhanced color contrast
US7859182B2 (en) Warm white LED-based lamp incoporating divalent EU-activated silicate yellow emitting phosphor
US7768189B2 (en) White LEDs with tunable CRI
TWI382569B (en) Lighting with white light and the use of its lighting equipment
US20060181192A1 (en) White LEDs with tailorable color temperature
JP5732059B2 (en) LED bulb
WO2012124267A1 (en) White light source
JP2011155297A (en) Light-emitting device
KR101417874B1 (en) White Light Emitting Device with High Color Rendering Index
WO2012035714A1 (en) Led light bulb
US8519611B2 (en) Hybrid illumination system with improved color quality
US10658552B2 (en) Blue emitting phosphor converted LED with blue pigment
JP5462211B2 (en) White light emitting device
JP6428245B2 (en) Light emitting device
AU2015284080B2 (en) Oxyfluoride phosphor compositions and lighting apparatus thereof
JP6550889B2 (en) Light emitting device and manufacturing method thereof
KR101706600B1 (en) White Light Emitting Device with High Color Rendering Index
KR102130817B1 (en) White Light Emitting Device with High Color Rendering Index
JP5566822B2 (en) LED bulb
KR101855391B1 (en) White Light Emitting Device with High Color Rendering Index
KR20150143377A (en) White Light Emitting Device with High Color Rendering Index
US20190097093A1 (en) Light-emitting device

Legal Events

Date Code Title Description
AS Assignment

Owner name: TOSHIBA MATERIALS CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NAKAGAWA, KATSUTOSHI;ITO, YUMI;YAMAKAWA, MASAHIKO;SIGNING DATES FROM 20120907 TO 20120910;REEL/FRAME:029334/0683

Owner name: KABUSHIKI KAISHA TOSHIBA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NAKAGAWA, KATSUTOSHI;ITO, YUMI;YAMAKAWA, MASAHIKO;SIGNING DATES FROM 20120907 TO 20120910;REEL/FRAME:029334/0683

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551)

Year of fee payment: 4

AS Assignment

Owner name: TOSHIBA MATERIALS CO., LTD., JAPAN

Free format text: NUNC PRO TUNC ASSIGNMENT;ASSIGNOR:KABUSHIKI KAISHA TOSHIBA;REEL/FRAME:057436/0701

Effective date: 20210611

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

AS Assignment

Owner name: SEOUL SEMICONDUCTOR CO.,LTD., KOREA, REPUBLIC OF

Free format text: NUNC PRO TUNC ASSIGNMENT;ASSIGNOR:TOSHIBA MATERIALS CO.,LTD.;REEL/FRAME:058251/0316

Effective date: 20211026