US8445937B2 - Barrier films for plastic substrates fabricated by atomic layer deposition - Google Patents
Barrier films for plastic substrates fabricated by atomic layer deposition Download PDFInfo
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- US8445937B2 US8445937B2 US12/055,560 US5556008A US8445937B2 US 8445937 B2 US8445937 B2 US 8445937B2 US 5556008 A US5556008 A US 5556008A US 8445937 B2 US8445937 B2 US 8445937B2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H10K77/10—Substrates, e.g. flexible substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Definitions
- the present invention relates to an article comprising a plastic or glass substrate and an atmospheric gas penetration barrier fabricated by atomic layer deposition.
- the article may be a component of an electrical or electronic device such as an organic light emitting diode.
- the article may also be used as a container for applications where gas permeation is important.
- Featherby and Dehaven disclose a hermetically coated device. Formation of such a device includes the steps of providing an integrated semiconductor circuit die, applying a first layer comprising an inorganic material which envelopes the circuit die, and applying a second layer enveloping the circuit die.
- Aintila (WO 9715070 A2) discloses contact bump formation on metallic contact pad areas on the surface of a substrate comprising using atomic layer epitaxy to form an oxide layer on the substrate which is opened at required points in the subsequent process step.
- Aftergut and Ackerman disclose a hermetically packaged radiation imager including a moisture barrier.
- a dielectric material layer is deposited in an atomic layer expitaxy technique as part of the sealing structure.
- Aftergut and Ackerman disclose a hermetically packaged radiation imager including a moisture barrier comprising a dielectric material layer deposited by atomic layer expitaxy.
- This invention describes an article comprising:
- the present invention is further an article comprising:
- the invention further describes an embodiment that is an enclosed container.
- Another embodiment of the present invention is an electrical or electronic device.
- Yet another embodiment of the present invention is a light-emitting polymer device.
- Yet another embodiment of the present invention is liquid crystalline polymer device.
- the invention further describes an organic light emitting diode.
- Another embodiment of the present invention is a transistor.
- Yet another embodiment of the present invention is a circuit comprising a light emitting polymer device.
- a still further article is an organic photovoltaic cell.
- a second article taught herein comprises a plurality of layers, each layer comprising one article, as described above, wherein the articles are in contact with each other. In one embodiment of this second article of the articles above are in contact with each other by lamination means.
- FIG. 1 shows a light-emitting polymer device with a barrier substrate and a barrier top coat.
- FIG. 2 shows a light-emitting polymer device with a barrier substrate and a barrier capping layer.
- FIG. 3 shows an organic transistor with a barrier substrate and a barrier capping layer.
- FIG. 4 shows an organic transistor with a barrier substrate and a barrier capping layer.
- FIG. 5 shows the measured optical transmission through 0.002 inch thick polyethylene naphthalate (PEN) coated with 25 nm of Al 2 O 3 barrier film.
- PEN polyethylene naphthalate
- the intrinsic permeability of polymers is, in general, too high by a factor 10 4 -10 6 to achieve the level of protection needed in electronic applications, such as flexible OLED displays.
- inorganic materials with essentially zero permeability, can provide adequate barrier protection.
- a defect-free, continuous thin-film coating of an inorganic should be impermeable to atmospheric gases.
- thin films have defects, such as pinholes, either from the coating process or from substrate imperfections which compromise barrier properties. Even grain boundaries in films can present a pathway for facile permeation.
- films should be deposited in a clean environment on clean, defect-free substrates.
- the film structure should be amorphous.
- the deposition process should be non-directional, (i.e. CVD is preferred over PVD) and the growth mechanism to achieve a featureless microstructure would ideally be layer-by-layer to avoid columnar growth with granular microstructure.
- Atomic layer deposition is a film growth method that satisfies many of these criteria for low permeation.
- a description of the atomic layer deposition process can be found in “Atomic Layer Epitaxy,” by Tuomo Suntola in Thin Solid Films, vol. 216 (1992) pp. 84-89.
- films grown by ALD form by a layer by layer process.
- a vapor of film precursor is absorbed on a substrate in a vacuum chamber. The vapor is then pumped from the chamber, leaving a thin layer of absorbed precursor, usually essentially a monolayer, on the substrate.
- a reactant is then introduced into the chamber under thermal conditions, which promote reaction with the absorbed precursor to form a layer of the desired material.
- ALD is in contrast to growth by common CVD and PVD methods where growth is initiated and proceeds at finite numbers of nucleation sites on the substrate surface. The latter technique can lead to a columnar microstructures with boundaries between columns along which gas permeation can be facile. ALD can produce very thin films with extremely low gas permeability, making such films attractive as barrier layers for packaging sensitive electronic devices and components built on plastic substrates.
- This invention describes barrier layers formed by ALD on plastic substrates and useful for preventing the passage of atmospheric gases.
- the substrates of this invention include the general class of polymeric materials, such as described by but not limited to those in Polymer Materials , (Wiley, New York, 1989) by Christopher Hall or Polymer Permeability , (Elsevier, London, 1985) by J. Comyn. Common examples include polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), which are commercially available as film base by the roll.
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- the materials formed by ALD, suitable for barriers include oxides and nitrides of Groups IVB, VB, VIB, IIIA, and IVA of the Periodic Table and combinations thereof.
- SiO 2 , Al 2 O 3 , and Si 3 N 4 are advantages of the oxides in this group.
- One advantage of the oxides in this group is optical transparency which is attractive for electronic displays and photovoltaic cells where visible light must either exit or enter the device.
- the nitrides of Si and Al are also transparent in the visible spectrum.
- the precursors used in the ALD process to form these barrier materials can be selected from precursors known to those skilled in the art and tabulated in published references such as M. Leskela and M. Ritala, “ALD precursor chemistry: Evolution and future challenges,” in Journal de Physique IV , vol. 9, pp 837-852 (1999) and references therein.
- the preferred range of substrate temperature for synthesizing these barrier coatings by ALD is 50° C.-250° C. Too high temperature (>250° C.) is incompatible with processing of temperature-sensitive plastic substrates, either because of chemical degradation of the plastic substrate or disruption of the ALD coating because of large dimensional changes of the substrate.
- the preferred thickness range for barrier films is 2 nm-100 nm. A more preferred range is 2-50 nm. Thinner layers will be more tolerant to flexing without causing the film to crack. This is extremely important for polymer substrates where flexibility is a desired property. Film cracking will compromise barrier properties. Thin barrier films also increase transparency in the cases of electronic devices where input or output of light is important. There may be a minimum thickness corresponding to continuous film coverage, for which all of the imperfections of the substrate are covered by the barrier film. For a nearly defect-free substrate, the threshold thickness for good barrier properties was estimated to be at least 2 nm, but may be as thick as 10 nm.
- Some oxide and nitride barrier layers coated by ALD may require a “starting” or “adhesion layer” to promote adhesion to the plastic substrate or the article requiring protection.
- the preferred thickness of the adhesion layer is in the range of 1 nm-100 nm.
- the choice of the materials for the adhesion layer will be from the same group of barrier materials.
- Aluminum oxide and silicon oxide are preferred for the adhesion layer, which may also be deposited by ALD, although other methods such as chemical and physical vapor deposition or other deposition methods known in the art may also be suitable.
- the basic building block of the barrier structure is either: (A) a single barrier layer with or without an adhesion layer, coated by ALD on a plastic or glass substrate, or (B) a barrier layer with or without an adhesion layer, coated by ALD on each side of a plastic substrate.
- This basic structure can then be combined in any number of combinations by laminating this building block to itself to form multiple, independent barrier layers. It is known in the art of barrier coatings that multiple layers, physically separate, can improve the overall barrier properties by much more than a simple multiplicative factor, corresponding the number of layers. This is demonstrated, for example, in J. Phys. Chem. B 1997, vol.
- ALD atomic layer deposition
- FIG. 1 shows a schematic representation of a light-emitting polymer device.
- the light emitting polymer device is shown as the light-emitting polymer (LEP) sandwiched between two electrodes.
- LEP light-emitting polymer
- a hole-conducting and/or electron-conducting layer can be inserted between the appropriate electrode and the LEP layer to increase device efficiency.
- the anode 31 is a layer of indium-tin oxide and the cathode 12 is a Ca/Al layer composite. With a voltage 18 applied between the electrodes, holes injected at the anode and electrons injected at the cathode combine to form excitons which decay radioactively, emitting light from the LEP 10 .
- the LEP is typically a photosensitive polymer such as poly-phenylene vinylene (PPV) or its derivatives.
- the cathode is frequently Ba or Ca and is extremely reactive with atmospheric gases, especially water vapor. Because of the use of these sensitive materials, the device packaging needs to exclude atmospheric gases in order to achieve reasonable device lifetimes.
- the package is comprised of a barrier-substrate 32 , 33 , 34 which can be plastic or glass on which the LEP device is deposited and then a top coated barrier film 14 .
- the substrate 33 is comprised of a polyester film, polyethylene naphthalate (PEN) which is 0.004 inch thick.
- Each side of the PEN film is coated with a 50 nm thick film of Al 2 O 3 32,33 , which is deposited by atomic layer deposition, using trimethylaluminum as the precursor for aluminum and ozone (O 3 ) as the oxidant.
- the substrate temperature during deposition is 150° C.
- the PEN substrate is placed in a vacuum chamber equipped with a mechanical pump. The chamber is evacuated. The trimethylaluminum precursor is admitted to the chamber at a pressure of 500 millitorr for approximately 2 seconds. The chamber is then purged with argon for approximately 2 seconds. The oxidant, ozone, is then admitted to the chamber at approximately 500 millitorr for approximately 2 seconds. Finally, the oxidant is purged with argon for approximately 2 seconds. This deposition process is repeated approximately 50 times to obtain a coating approximately 100 nanometers in thickness.
- the Al 2 O 3 layer is optically transparent in the visible.
- the coated substrate may be flexed without loss of the coating.
- One of the Al 2 O 3 barriers is coated with indium-tin oxide 31 transparent conductor by rf magnetron sputtering from a 10% (by weight) Sn-doped indium oxide target.
- the ITO film thickness is 150 nm.
- the LEP is spin coated on the ITO electrode, after which a cathode 12 of 5 nm Ca with about 1 ⁇ m of Al are thermally evaporated from Ca and Al metal sources, respectively.
- This LEP device is then coated with a 50 nm-thick, top barrier layer film of Al 2 O 3 14 , deposited by atomic layer deposition, again using trimethylaluminum as the precursor for aluminum and ozone (O 3 ) as the oxidant.
- the resulting structure is now impervious to atmospheric gases.
- FIG. 2 Another version of a packaging scheme is shown in FIG. 2 .
- the top-coated barrier is replaced by an identical substrate barrier structure (Al 2 O 3 /PEN/Al 2 O 3 ) without an ITO electrode as described in the Example 1 above.
- This capping barrier structure is sealed to the substrate barrier using a layer 20 of epoxy.
- FIG. 3 illustrates a protection strategy with ALD barrier coatings for an organic transistor.
- the transistor shown is a bottom gate structure with the organic semiconductor 28 as the final or top layer. Because most organic semiconductors are air sensitive and prolonged exposure degrades their properties, protection strategies are necessary.
- the package is comprised of a barrier-substrate 32 , 33 , 34 on which the transistor is deposited and then sealed to an identical capping barrier structure 35 , 36 , 37 .
- the substrate 36 is comprised of a polyester film, polyethylene naphthalate (PEN), 0.004 inch thick.
- PEN polyethylene naphthalate
- Each side 35 , 37 of the PEN film is coated with a 50 nm thick film of Al 2 O 3 , which is deposited by atomic layer deposition, using trimethylaluminum as the precursor for aluminum and ozone (O 3 ) as the oxidant.
- the substrate temperature during deposition is 150° C.
- the PEN substrate 36 is placed in a vacuum chamber equipped with a mechanical pump. The chamber is evacuated. The trimethylaluminum precursor is admitted to the chamber at a pressure of 500 millitorr for approximately 2 seconds. The chamber is then purged with argon for approximately 2 seconds. The oxidant, ozone, is then admitted to the chamber at approximately 500 millitorr for approximately 2 seconds.
- the oxidant is purged with argon for approximately 2 seconds. This deposition process is repeated approximately 50 times to obtain a coating approximately 100 nanometers in thickness.
- a gate electrode 22 of 100 nm thick Pd metal is ion-beam sputtered through a shadow mask on to the barrier film 32 of Al 2 O 3 .
- a gate dielectric 25 of 250 nm Si 3 N 4 is then deposited by plasma-enhanced chemical vapor deposition, also through a mask to allow contact to the metal gate. This is followed by patterning of 100 nm-thick Pd source 26 and drain 27 electrodes, ion beam sputtered on the gate dielectric 25 .
- the top organic semiconductor 28 e.g.
- pentacene is thermally evaporated through a shadow mask that allows contact to source-drain electrodes.
- the entire transistor is capped with an Al 2 O 3 /PEN/Al 2 O 3 barrier-structure 35 , 36 , 37 , sealed to substrate barrier with an epoxy sealant 20 .
- the capping barrier of Example 3 can be replaced by a single layer 24 of 50 nm-thick Al 2 O 3 , deposited by atomic layer deposition, using trimethylaluminum as the precursor for aluminum and ozone (O 3 ) as the oxidant.
- Both packaging structures for the organic transistor device are impervious to atmospheric gases.
- the plastic substrate with barrier coatings can also be replaced by an impermeable glass substrate.
- the barrier capping layer is comprised of an initial adhesion layer of silicon nitride deposited by plasma-enhanced chemical vapor deposition at room temperature, followed by a 50 nm-thick Al2O3 24 barrier, deposited by atomic layer deposition, as described in Example 3.
- PEN polyethylene terephthalate
- FIG. 5 shows that the optical transmission for this Al 2 O 3 -coated PEN barrier and uncoated PEN is the same (>80% transmittance above 400 nm) verifying the transparency of the thin Al 2 O 3 barrier coating.
Abstract
Description
-
- a) a substrate made of a material selected from the group consisting of plastic and glass, and
- b) a film deposited upon said substrate by atomic layer deposition.
-
- a) A substrate made of a material selected from the group consisting of plastic and glass;
- b) an adhesion layer coated; and
- c) a gas permeation barrier deposited by atomic layer deposition.
Another embodiment of the present invention is an article comprising: - a) a substrate made of a material selected from the group consisting of plastic and glass;
- b) an organic semiconductor, and
- c) a gas permeation barrier deposited by atomic layer deposition.
A yet further embodiment of the present invention is an article comprising: - a) A substrate made of a material selected from the group consisting of plastic and glass,
- b) A liquid crystal polymer, and
- c) a gas permeation barrier deposited by atomic layer deposition
Claims (32)
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US12/055,560 US8445937B2 (en) | 2003-05-16 | 2008-03-26 | Barrier films for plastic substrates fabricated by atomic layer deposition |
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US47102003P | 2003-05-16 | 2003-05-16 | |
US10/846,749 US20070275181A1 (en) | 2003-05-16 | 2004-05-14 | Barrier films for plastic substrates fabricated by atomic layer deposition |
US12/055,560 US8445937B2 (en) | 2003-05-16 | 2008-03-26 | Barrier films for plastic substrates fabricated by atomic layer deposition |
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US8445937B2 true US8445937B2 (en) | 2013-05-21 |
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US10/846,749 Abandoned US20070275181A1 (en) | 2003-05-16 | 2004-05-14 | Barrier films for plastic substrates fabricated by atomic layer deposition |
US10/554,583 Abandoned US20060275926A1 (en) | 2003-05-16 | 2005-05-03 | Barrier films for plastic substrates fabricated by atomic layer deposition |
US12/055,560 Expired - Fee Related US8445937B2 (en) | 2003-05-16 | 2008-03-26 | Barrier films for plastic substrates fabricated by atomic layer deposition |
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US10/554,583 Abandoned US20060275926A1 (en) | 2003-05-16 | 2005-05-03 | Barrier films for plastic substrates fabricated by atomic layer deposition |
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US (3) | US20070275181A1 (en) |
EP (1) | EP1629543B1 (en) |
JP (3) | JP2007516347A (en) |
KR (3) | KR20060006840A (en) |
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WO2004105149A1 (en) | 2004-12-02 |
CN1791989A (en) | 2006-06-21 |
EP1629543B1 (en) | 2013-08-07 |
EP1629543A1 (en) | 2006-03-01 |
KR20060006840A (en) | 2006-01-19 |
JP2012184509A (en) | 2012-09-27 |
US20080182101A1 (en) | 2008-07-31 |
KR20130081313A (en) | 2013-07-16 |
US20060275926A1 (en) | 2006-12-07 |
KR20120061906A (en) | 2012-06-13 |
KR101423446B1 (en) | 2014-07-24 |
JP2007516347A (en) | 2007-06-21 |
CN103215569A (en) | 2013-07-24 |
US20070275181A1 (en) | 2007-11-29 |
JP2011205133A (en) | 2011-10-13 |
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