US7842946B2 - Electronic devices with hybrid high-k dielectric and fabrication methods thereof - Google Patents
Electronic devices with hybrid high-k dielectric and fabrication methods thereof Download PDFInfo
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- US7842946B2 US7842946B2 US11/849,460 US84946007A US7842946B2 US 7842946 B2 US7842946 B2 US 7842946B2 US 84946007 A US84946007 A US 84946007A US 7842946 B2 US7842946 B2 US 7842946B2
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000002105 nanoparticle Substances 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000002861 polymer material Substances 0.000 claims description 5
- 229910010252 TiO3 Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229920000058 polyacrylate Polymers 0.000 claims description 4
- -1 polysiloxane Polymers 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910019351 (BaxSr1-x)TiO3 Inorganic materials 0.000 claims description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 150000002118 epoxides Chemical class 0.000 claims description 2
- 229920002313 fluoropolymer Polymers 0.000 claims description 2
- 239000004811 fluoropolymer Substances 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920002239 polyacrylonitrile Polymers 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007764 slot die coating Methods 0.000 description 2
- 229910002976 CaZrO3 Inorganic materials 0.000 description 1
- 229910004410 SrSnO3 Inorganic materials 0.000 description 1
- 230000001668 ameliorated effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Definitions
- the invention relates to electronic devices with a high dielectric constant (high-k) dielectric layer, and in particular to electronic devices with high-k dielectric including combinations of organic and/or inorganic hybrid high-k dielectric material and fabrication methods thereof.
- high-k high dielectric constant
- FET field effect transistor
- the FET requires high carrier mobility in its semiconductor layers, high width-to-length ratio of its channels as well as high capacitance of the FET structure.
- High capacitance of the FET structure depends on the thickness and dielectric constant (k) of the gate insulating layer. A thinner high-k gate insulating layer results in a high current I D at low operating voltage, thereby reducing power consumption.
- U.S. Pat. No. 6,586,791 discloses a method for forming a gate insulating layer.
- a suspension solution is prepared by dispensing nano-scale ceramic particles in a polymer solution.
- the suspension solution is then applied on a substrate by spin coating, thus forming a gate insulating layer.
- the gate insulating layer prepared by the conventional method suffers from rough surfaces, strip defects and unevenness, resulting in high leakage in electronic devices during operation.
- FIG. 1 is a cross section of a conventional organic thin film transistor (OTFT) device formed by dispensing nano-scale ceramic particles in a polymer solution.
- an OTFT includes a heavily doped silicon substrate 10 with a metal layer 15 disposed thereon to served as a gate electrode.
- An insulating layer 20 is formed on the heavily doped silicon substrate 10 .
- a source region 25 and a drain region 30 separated by a predetermined distance are formed on the insulating layer 20 .
- An organic semiconductor layer 35 is disposed on the heavily doped silicon substrate 10 and covers the source region 25 , the drain region 30 , and the region therebetween.
- the insulating layer 20 is typically formed by spin coating a suspension solution and dispensing nano-scale ceramic particles in a polymer solution, the insulating layer 20 suffers from rough surfaces, strip defects and unevenness, i.e., the peak-to-valley can reach 0.3 ⁇ m for film thicknesses less than 0.6 ⁇ m, resulting in high leakage in the electronic device during operation.
- U.S. Pat. No. 6,558,987 discloses a thin film transistor (TFT) device and fabrication methods thereof.
- TFT thin film transistor
- Two dielectric layers are used as a gate dielectric of a conventional TFT device.
- Both dielectric layers such as silicon nitride (SiN x ) or silicon oxide (SiO x ) respectively, are inorganic materials deposited by chemical vapor deposition (CVD). After a first dielectric layer is deposited, contaminant residue on the first dielectric layer is cleaned. A second dielectric layer is then deposited on the first dielectric layer to avoid defect generation.
- U.S. Pat. No. 6,563,174 discloses two high-k dielectric layers used as a gate dielectric of the conventional TFT device, wherein a first dielectric layer is typically silicon nitride (SiN x ), while the second dielectric layer is a metal oxide such as BaTiO 3 , CaZrO 3 , or SrSnO 3 .
- the second dielectric layer improves crystallinity of the semiconductor layer (e.g., ZnO) to improve carrier mobility of the TFT devices.
- U.S. Pat. No. 7,005,674 discloses an organic thin film transistor (OTFT) structure and fabrication method thereof.
- Two organic dielectric layers are used as a gate dielectric of the OTFT device, wherein the first dielectric layer is a high-k dielectric layer, and the second dielectric layer is a polymer covering the first dielectric layer, thereby matching the semiconductor of the OTFT device and improving performance of the device.
- FIG. 2 is a cross section of another conventional organic thin film transistor (OTFT) device.
- an organic thin film transistor includes a substrate 50 with a gate electrode 55 thereon.
- a first insulating layer 60 is disposed on the substrate 50 covering the gate electrode 55 .
- a second insulating layer 65 is disposed on the first insulating layer 60 .
- An organic semiconductor layer 70 is disposed on the second insulating layer 65 .
- a source region 80 and a drain region 90 separated by a predetermined distance are formed on the organic semiconductor layer 70 .
- the second insulating layer can improve original interface properties between the organic semiconductor layer 70 and the high-k first dielectric layer 65 , due to the rough interface between the second insulating layer 65 and the first insulating layer 60 , high leakage for electronic devices during operation often occur. Thus, decreasing performance efficiency.
- the aforementioned conventional OTFT devices include a two-layered dielectric structure as the gated dielectric layer of the OTFT device.
- the dielectric constant of the second dielectric layer is typically lower than that of the first dielectric layer such that increasing the dielectric constant is limited. Thus, limiting applications of the OTFT devices.
- the invention relates to a fabrication method for electronic devices with high-k dielectric layers by a solution process. Dispersion of nano-scale high-k particles in polymer solution is improved, thus improving surface condition of the high-k dielectric layer and enhancing electronic device performance.
- the second dielectric layer of the electronic device is formed by a solution process on the first dielectric layer such that an invisible interface substantially exists between the first and the second dielectric layers, thereby preventing high leakage in electronic devices during operation.
- An embodiment of the invention provides an electronic device with hybrid high-k dielectric, comprising: a substrate; a first electrode disposed on the substrate; a hybrid multi-layers comprising a first dielectric layer and a second dielectric layer disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without an interface therebetween; and a second electrode is disposed on the hybrid multi-layers.
- Another embodiment of the invention further provides a method for manufacturing an electronic device with hybrid high-k dielectric.
- a substrate is provided.
- a first electrode is formed on the substrate.
- a first dielectric layer and a second dielectric layer are sequentially formed creating hybrid multi-layers, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without an interface therebetween.
- a second electrode is formed on the hybrid multi-layers.
- FIG. 1 is a cross section of a conventional organic thin film transistor (OTFT) device formed by dispensing nano-scale ceramic particles in polymer solution;
- OTFT organic thin film transistor
- FIG. 2 is a cross section of another conventional organic thin film transistor (OTFT) device
- FIGS. 3A-3B are cross sections of an exemplary embodiment of OTFT devices of the invention.
- FIG. 3C is cross sections of an exemplary embodiment of a bottom contact OTFT device of the invention.
- FIG. 4 shows the electrical performance of the bottom contact OTFT device of the invention
- FIG. 5A is a scanning electron microscope (SEM) cross section image illustrating the first dielectric layer formed on the substrate.
- FIG. 5B is a scanning electron microscope (SEM) cross section image illustrating the second dielectric layer formed on the first dielectric layer.
- Embodiments of the invention provide applying a solvable second dielectric layer on the first dielectric layer to create an organic/inorganic hybrid high-k dielectric layer which improves dispersion of nano-scale high-k particles in a polymer solution and surface roughness of the hybrid high-k dielectric layer, thereby enhancing performance of a device.
- An exemplary electronic device with hybrid high-k dielectric multi-layers of the invention comprises a substrate, a first electrode disposed on the substrate, a hybrid multi-layers comprising a first dielectric layer and a second dielectric layer disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without an interface therebetween, and a second electrode disposed on the hybrid multi-layers.
- the electronic device comprise a field effect transistor, an organic thin film transistor (OTFT), an inorganic thin film transistor, or a metal-insulator-metal (MIM) capacitor.
- FIGS. 3A-3B are cross sections of an embodiment of OTFT devices of the invention.
- a top contact OTFT device 100 a comprises a substrate 110 .
- a first electrode layer 120 is disposed on the substrate 110 to serve as a gate electrode.
- a hybrid multi-layered structure comprises a first dielectric layer 130 a and a second dielectric layer 130 b disposed on the substrate 110 , wherein the first dielectric layer and the second dielectric layer are solvable and substantially without an interface therebetween (as shown as pseudo-interface 135 ).
- a second electrode layer comprising a source region 150 and a drain region 160 are separated from each other.
- a patterned semiconductor layer 140 a is disposed on the second dielectric layer 130 b to serve as an activation layer of the top contact OTFT device 100 a , where both ends of the semiconductor layer 140 a are partly covered by the source region 150 and the drain region 160 , respectively. Furthermore, the source region 150 and the drain region 160 are separated by a predetermined distance 145 .
- a top contact OTFT device 100 b comprises a substrate 110 .
- a first electrode layer 120 is disposed on the substrate 110 to serve as a gate electrode.
- a hybrid multi-layered structure comprises a first dielectric layer 130 a and a second dielectric layer 130 b disposed on the substrate 110 , wherein the first dielectric layer and the second dielectric layer are solvable and substantially without an interface therebetween (as shown as pseudo-interface 135 ).
- a second electrode layer comprising a source region 150 and a drain region 160 are separated from each other.
- a semiconductor layer 140 b is entirely formed on the second dielectric layer 130 b to serve as an activation layer of the top contact OTFT device 100 b , wherein the source region 150 and the drain region 160 are separated by a predetermined distance 145 and disposed on the semiconductor layer 140 b . Note that when the OTFT devices are applied to an active matrix substrate of display devices, the semiconductor layers of each OTFT device can be separated from each other.
- FIG. 3C is a cross sections of an embodiment of a bottom contact OTFT device of the invention.
- a bottom contact OTFT device 200 comprises a substrate 210 .
- a first electrode layer 220 is disposed on the substrate 210 to serve as a gate electrode.
- a hybrid multi-layered structure comprises a first dielectric layer 230 a and a second dielectric layer 230 b disposed on the substrate 210 , wherein the first dielectric layer and the second dielectric layer are solvable and substantially without an interface therebetween (as shown as pseudo-interface 235 ).
- a second electrode layer comprising a source region 250 and a drain region 260 are separated from each other.
- a semiconductor layer 240 is disposed on the second dielectric layer 230 b to serve as an activation layer of the bottom contact OTFT device 200 , where opposite ends of the source region 250 and the drain region 260 are covered by the semiconductor layer 240 .
- the first dielectric layer comprises a high dielectric constant (high-k) dielectric material having an organic/inorganic hybrid material with a combination of high-k nano-particles and a photosensitive and/or a non-photosensitive polymer matrix.
- the high-k nano-particles comprise metal oxide nano-particles, ferroelectric insulation nano-particles, or combinations thereof.
- the metal oxide nano-particles comprise Al 2 O 3 , TiO 2 , ZrO 2 , Ta 2 O 5 , SiO 2 , BaO, HfO 2 , GeO 2 , Y 2 O 3 , CeO 2 , or combinations thereof.
- ferroelectric insulation nano-particles comprise BaTiO 3 , SrTiO 3 , Bi 4 Ti 3 O 12 , (Ba x Sr 1-x )TiO 3 , (Ba x Zr 1-x )TiO 3 , (Pb x Zr 1-x )TiO 3 , or combinations thereof.
- the photosensitive and/or non-photosensitive polymer matrix comprises polyimide, polyamide, polyvinyl alcohol, polyvinyl phenol, polyacrylate (PA), epoxide, polyurethane, fluoropolymer, polysiloxane, polyester, polyacrylonitrile, polystyrene, or polyethylene.
- the second dielectric layer is formed by a solution process on the first dielectric layer such that an invisible interface substantially exists between the first and the second dielectric layers. More specifically, the solution process comprises directly forming a patterned structure.
- the step of directly forming a patterned structure may comprise slot die coating, flexographic coating, inkjet printing, microcontact printing, nanoimprinting, or screen printing.
- the solution process comprises forming a thin film, and then patterning it.
- the step of forming the thin film may comprise spin coating, slot die coating, dip coating, or spraying, while the thin film may be patterned by lithography, etching, or laser ablation.
- the second dielectric layer is soluble with the first dielectric layer, wherein the polymer material of the second dielectric layer and the first dielectric layer can be of the same polymer material or selected from different polymer materials.
- the second dielectric layer and the first dielectric layer can be formed by different fabrication processes.
- the high-k nano-particles in the first dielectric layer are evenly dispensed to the second dielectric layer, resulting in a smooth surface and uniform thickness of the second dielectric layer. Since the high-k nano-particles are evenly distributed in both the first and the second dielectric layers, the dielectric constant of the hybrid multi-layered structure can thus increase, ameliorating electric performance of electronic devices.
- FIG. 4 shows electric performance of the bottom contact OTFT device of the invention.
- the on/off ratio of the OTFT device is approximately 10 5 .
- Carrier mobility of the OTFT device is approximately 0.075 cm 2 /Vs.
- Threshold voltage of the OTFT device is approximately ⁇ 9V.
- the dielectric constant of the OTFT device calculated from the capacitance-voltage (C ⁇ V) relation is approximately ⁇ 7.
- FIG. 5A is a scanning electron microscope (SEM) cross section image illustrating the first dielectric layer formed on the substrate.
- the first dielectric layer 450 A is a high dielectric constant (high-k) dielectric material comprising an organic/inorganic hybrid material with a combination of high-k nano-particles and a photosensitive and/or a non-photosensitive polymer matrix.
- the first dielectric layer 450 A is formed by a solution process on the substrate 400 resulting in a rough surface.
- FIG. 5B is a scanning electron microscope (SEM) cross section image illustrating the second dielectric layer formed on the first dielectric layer.
- the second dielectric layer is selected from materials soluble to the first dielectric layer.
- the high-k nano-particles are evenly distributed in the organic/inorganic hybrid high-k dielectric layer. With the dielectric constant of the hybrid multi-layered structure increased, electric performance of electronic devices are ameliorated.
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Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/332,794 US20090087944A1 (en) | 2006-12-25 | 2008-12-11 | Electronic devices with hybrid high-k dielectric and fabrication methods thereof |
Applications Claiming Priority (3)
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TWTW95148763 | 2006-12-25 | ||
TW95148763A | 2006-12-25 | ||
TW095148763A TWI323034B (en) | 2006-12-25 | 2006-12-25 | Electronic devices with hybrid high-k dielectric and fabrication methods thereof |
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US12/332,794 Division US20090087944A1 (en) | 2006-12-25 | 2008-12-11 | Electronic devices with hybrid high-k dielectric and fabrication methods thereof |
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US7842946B2 true US7842946B2 (en) | 2010-11-30 |
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US11/849,460 Expired - Fee Related US7842946B2 (en) | 2006-12-25 | 2007-09-04 | Electronic devices with hybrid high-k dielectric and fabrication methods thereof |
US12/332,794 Abandoned US20090087944A1 (en) | 2006-12-25 | 2008-12-11 | Electronic devices with hybrid high-k dielectric and fabrication methods thereof |
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US20110147891A1 (en) * | 2008-08-26 | 2011-06-23 | Nxp B.V. | Capacitor and a method of manufacturing the same |
US8697516B2 (en) * | 2008-08-26 | 2014-04-15 | Nxp, B.V. | Capacitor and a method of manufacturing the same |
US9343233B2 (en) | 2013-04-11 | 2016-05-17 | Georgia Tech Research Corporation | Additively deposited electronic components and methods for producing the same |
CN106226378A (en) * | 2016-07-13 | 2016-12-14 | 电子科技大学 | A kind of nitrogen dioxide sensor being embedded with fluoropolymer and preparation method thereof |
CN106226378B (en) * | 2016-07-13 | 2019-03-12 | 电子科技大学 | One kind is embedded with fluoropolymer-containing nitrogen dioxide sensor and preparation method thereof |
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Also Published As
Publication number | Publication date |
---|---|
US20090087944A1 (en) | 2009-04-02 |
TWI323034B (en) | 2010-04-01 |
US20080149922A1 (en) | 2008-06-26 |
TW200828570A (en) | 2008-07-01 |
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