US7842609B2 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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US7842609B2
US7842609B2 US12/351,063 US35106309A US7842609B2 US 7842609 B2 US7842609 B2 US 7842609B2 US 35106309 A US35106309 A US 35106309A US 7842609 B2 US7842609 B2 US 7842609B2
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tungsten layer
tungsten
equal
layer
gas
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US20090275197A1 (en
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Atsushi Kariya
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Renesas Electronics Corp
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NEC Electronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device using a process for forming a tungsten layer in a hole formed in an insulating layer.
  • a contact plug is usually used to connect a transistor to an upper interconnect layer or to connect an interconnect layer to another interconnect layer.
  • a contact plug is formed by forming a tungsten layer in a hole formed in an insulating interlayer, for example, as stated in Japanese Laid-open patent publication No. 11-87268, Japanese Laid-open patent publication No. 2007-9298, Japanese Patent Application National Publication (Laid-Open) No. 2001-525491, and U.S. Pat. No. 6,309,966.
  • Japanese Laid-open patent publication No. 11-87268 discloses that in order to selectively grow a tungsten layer in a hole, a first tungsten layer is formed at a temperature of 200° C. to 260° C., and then a second tungsten layer is formed at a temperature of 280° C. to 340° C. According to Japanese Laid-open patent publication No. 11-87268, if the temperature is higher than the above temperature, resistance becomes larger, and the selective growth is impossible.
  • Japanese Patent Application National Publication (Laid-Open) No. 2001-525491 discloses that when a tungsten layer is formed by a nucleation step and a bulk deposition step, a pressure increasing step is performed between the nucleation step and the bulk deposition step. In the pressure increasing step, a tungsten-containing source is not contained in process gas.
  • a substrate temperature is set to 325° C. to 450° C.
  • a method for manufacturing a semiconductor device comprising: forming a hole in an insulating layer arranged above a surface of a semiconductor substrate; forming a first tungsten layer in the hole with heating the semiconductor substrate carried into a reaction chamber at a temperature of equal to or more than 330° C. and equal to or less than 400° C. and introducing tungsten-containing gas and at least one of B 2 H 6 gas and SiH 4 gas into the reaction chamber; introducing at least one of H 2 gas and inert gas into the reaction chamber and raising the temperature of the semiconductor substrate to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds; and forming a second tungsten layer on the first tungsten layer by introducing tungsten-containing gas into the reaction chamber.
  • the fill capability of the tungsten layer to the hole formed in the insulating layer is improved, and the grain size of the tungsten layer is enlarged. Further, productivity of the semiconductor device is improved.
  • FIG. 1 is a flowchart explaining a method for manufacturing a semiconductor device according to an exemplary embodiment of the present invention
  • FIG. 2 is across-sectional view illustrating the method for manufacturing the semiconductor device according to the exemplary embodiment of the present invention
  • FIG. 3 is a cross-sectional view illustrating the next process of FIG. 2 ;
  • FIG. 4 is a cross-sectional view illustrating the next process of FIG. 3 ;
  • FIG. 5 is a cross-sectional view illustrating the next process of FIG. 4 ;
  • FIG. 6 is a graph illustrating that the layer forming speed of a second tungsten layer depends on the substrate temperature
  • FIGS. 7A to 7E are scanning electron microscope (SEM) images which show cross sections of samples according to comparison examples 1 and 2 and embodiments 1 to 3.
  • FIG. 1 is a flowchart illustrating a method for manufacturing a semiconductor device according to an exemplary embodiment of the present invention.
  • a hole is first formed in an insulating layer disposed above a surface of a semiconductor substrate (S 10 ).
  • the semiconductor substrate carried into a reaction chamber is heated at a temperature of equal to or more than 330° C. and equal to or less than 400° C. (S 20 ).
  • tungsten-containing gas and at least one of B 2 H 6 gas and SiH 4 gas are introduced into the reaction chamber to thereby form a first tungsten layer in the hole (S 30 ).
  • H 2 gas and inert gas is introduced into the reaction chamber, and the temperature of the semiconductor substrate is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds (S 40 )
  • tungsten-containing gas is introduced into the reaction chamber to thereby form a second tungsten layer on the first tungsten layer (S 50 ).
  • an isolation layer 102 and transistors 120 and 140 are formed on a semiconductor substrate 100 such as, for example, a silicon substrate.
  • the transistors 120 and 140 include silicide layers 122 and 142 on a gate electrode and silicide layers 124 , 126 , 144 , and 146 on diffusion layers which work a source or a drain.
  • the diffusion layer having the silicide layer 126 functions as not only a component of the transistor 120 but also a component of the transistor 140 located nearby the transistor 120 .
  • an insulating interlayer 200 is formed on the transistors 120 , 140 and the isolation layer 102 .
  • the insulating interlayer 200 has a multi-layer structure.
  • the insulating interlayer 200 is selectively removed using, for example, a mask pattern and an etching technique, so that holes 221 , 222 , 223 , 224 , and 225 are formed in the insulating interlayer 200 .
  • the hole 221 provides a space for forming a contact plug on the silicide layer 144 on the diffusion layer and the silicide layer 142 on the gate electrode in the transistor 140 .
  • the hole 222 provides a space for forming a contact plug on the silicide layer 144 on the diffusion layer of the transistor 140 .
  • the hole 223 provides a space for forming a contact plug on the silicide layer 126 .
  • the hole 224 provides a space for forming a contact plug on the silicide layer 122 on the gate electrode of the transistor 120 .
  • the hole 225 provides a space for forming a contact plug on the silicide layer 124 on the diffusion layer of the transistor 120 .
  • the diameter of the holes 221 to 225 is, for example, equal to or more than 50 nm and equal to or less than 130 nm.
  • Barrier layers 230 are formed on bottom surfaces and sidewalls of the holes 221 to 225 and on the insulating interlayer 200 .
  • the barrier layer 230 functions to suppress tungsten from being diffused.
  • the barrier layer 230 is formed by layers that a Ti layer and a TiN layer are deposited in order, or by a TiN layer.
  • the semiconductor substrate carried into the reaction chamber is heated at a temperature of equal to or more than 330° C. to equal to or less than 400° C., preferably, equal to or more than 330° C. to equal to or less than 360° C.
  • Tungsten-containing gas, carrier gas, and at least one of B 2 H 6 gas and SiH 4 gas are introduced into the reaction chamber.
  • a first tungsten layer 242 is formed on the barrier layer 230 .
  • the first tungsten layer 242 is formed even above a surface of the insulating interlayer 200 .
  • the first tungsten layer 242 has the thickness of, for example, equal to or more than 2 nm and equal to or less than 10 nm.
  • the first tungsten layer 242 is formed even on the barrier layer 230 formed in the holes 221 to 225 .
  • WF 6 is used as tungsten-containing gas.
  • Ar is used as carrier gas, but carrier gas may contain N 2 .
  • Tungsten-containing gas and at least one of B 2 H 6 gas and SiH 4 gas can be introduced into the reaction chamber simultaneously or alternately.
  • the former is, for example, an atomic layer deposition (ALD).
  • the latter preferably includes a process for putting purge gas (for example, same gas as carrier gas) between a process for introducing at least one of B 2 H 6 gas and SiH 4 gas and a process for introducing tungsten-containing gas.
  • H 2 gas and inert gas is introduced into the reaction chamber, and the temperature of the semiconductor substrate 100 is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds.
  • rare gas such as Ar and N 2 can be used as inert gas.
  • Gases used in this process may be same as gases used in a process for forming a second tungsten layer 240 which will be described later without tungsten-containing gas is excluded.
  • the temperature is preferably raised at a rate of equal to or more than 0.5° C./second and equal to or less than 2.5° C./second. A time taken to raise the temperature is preferably equal to or more than 40 seconds.
  • tungsten-containing gas, H 2 gas and carrier gas are introduced into the reaction chamber.
  • the second tungsten layer 240 is formed on the first tungsten layer 242 .
  • the second tungsten layer 240 is formed even above a surface of the insulating interlayer 200 .
  • the second tungsten layer 240 has the thickness of, for example, equal to or more than 100 nm and equal to or less than 400 nm.
  • the second tungsten layer 240 is also formed even on the first tungsten layer 242 formed in the holes 221 to 225 .
  • WF 6 is used as tungsten-containing gas.
  • Ar is used as carrier gas, but carrier gas may contain N 2 . In case where carrier gas contains N 2 , a surface of the second tungsten layer 240 becomes smooth.
  • portions of the first tungsten layer 242 and the second tungsten layers 240 above the insulating interlayer 200 are removed.
  • This removing process is performed using an etch-back technique or a chemical mechanical polishing (CMP) technique.
  • CMP chemical mechanical polishing
  • a contact plug which includes the first tungsten layer 242 and the second tungsten layer 240 is embedded in the holes 221 to 225 .
  • a portion of the barrier layer 233 above the insulating interlayer 200 may be removed.
  • the substrate temperature when the first tungsten layer 242 is formed is equal to or more than 330° C. and equal to or less than 400° C., preferably, equal to or more than 330° C. and equal to or less than 360° C.
  • the step coverage of the first tungsten layer 242 to the holes 221 to 225 is improved, and thus the fill capability of the second tungsten layer 240 is improved, whereby reliability of the contact plug is improved.
  • the substrate temperature is raised more than it, the step coverage of the first tungsten layer 242 to the holes 221 to 225 gets worse, and thus the fill capability of the second tungsten layer 240 gets worse.
  • the substrate temperature when the second tungsten layer 240 is formed is higher than when the first tungsten layer 242 is formed and is equal to or more than 370° C. and equal to or less than 410° C.
  • FIG. 6 is a graph illustrating that the deposition rate of the second tungsten layer 240 depends on the substrate temperature.
  • the deposition rate of the second tungsten layer 240 is 50 nm/minute when the substrate temperature is 330° C.
  • the deposition rate of the second tungsten layer 240 are 285 nm/minute and 500 nm/minute respectively, when the substrate temperatures are 410° C. and 450° C. Therefore, it is understood that if the substrate temperature is raised before the second tungsten layer 240 is formed, the deposition rate is increased, whereby productivity of the semiconductor device is improved.
  • At least one of H 2 gas and inert gas is introduced into the reaction chamber, and the temperature of the semiconductor substrate is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds.
  • gas absorbed into the first tungsten layer 242 is removed, so the grain size of the second tungsten layer 240 is enlarged, whereby resistance of the contact plug is lowered.
  • This effect is remarkable when SiH 4 gas other than B 2 H 6 gas is used in the process for forming the first tungsten layer 242 .
  • the substrate temperature when forming the first tungsten layer 242 is set to equal to or more than 330° C. and equal to or less than 400° C.
  • the substrate temperature when forming the second tungsten layer 240 is set to equal to or more than 370° C. and equal to or less than 410° C.
  • at least one of H 2 gas and inert gas is introduced into the reaction chamber before forming the second tungsten layer 240 after forming the first tungsten layer 242
  • the substrate temperature is raised with 30 or more seconds. Accordingly, resistance can lowered while improving reliability of the contact plug, and productivity of the semiconductor device can be improved.
  • the contact plug is embedded in the insulating interlayer of a first layer, but the technology disclosed in the exemplary embodiment described above can be applied when the contact plug is formed in the insulating interlayer of a second or more above layer.
  • Samples according to embodiments 1 to 3 are manufactured by the method disclosed in the exemplary embodiment of the present invention described above in each embodiment, when forming the first tungsten layer 242 , SiH 4 gas, WF 6 gas, and Ar gas are introduced into the reaction chamber, and the substrate temperature is set to 350° C. In this process, SiH 4 gas and WF 6 gas are alternately introduced total six times. Also, when forming the second tungsten layer 240 , H 2 gas, WF 6 gas, N 2 gas, and Ar gas are introduced into the reaction chamber, and the substrate temperature is set to 390° C. The substrate temperature is raised while forming the second tungsten layer 240 after forming the first tungsten layer 242 . The length of the time raising temperature of the substrate is set to 30 seconds in the embodiment 1, 40 seconds in the embodiment 2 and 50 seconds in the third embodiment.
  • samples according to comparison examples 1 and 2 are manufactured.
  • the manufacturing conditions of the comparison examples 1 and 2 are same as those of the embodiments 1 to 3 except that the length of the time raising temperature of the substrate is set to 8 seconds and 20 seconds, respectively.
  • FIGS. 7A to 7E are scanning electron microscope (SEM) images which show cross sections of the samples according to the comparison examples 1 and 2 and the embodiments 1 to 3. These photographs show the first tungsten layer 242 and the second tungsten layer 240 which are formed on the insulating interlayer.
  • SEM scanning electron microscope
  • Table 1 shows the manufacturing condition, the sheet resistance, the layer thickness, and the specific resistance of the embodiments 1 to 3 and the comparison examples 1 and 2.
  • the sheet resistances are 0.538 ⁇ / ⁇ and 0.529 ⁇ / ⁇ , respectively.
  • the sheet resistances are 0.484 ⁇ / ⁇ , 0.459 ⁇ / ⁇ , and 0.452 ⁇ / ⁇ , respectively. It is shown that the sheet resistances of the samples of the embodiments are lower by equal to or more than 0.04 ⁇ / ⁇ compared to those of the samples of the comparison examples.
  • the specific resistances are 15.6 ⁇ cm, 13.9 ⁇ cm, respectively.
  • the specific resistances are 12.9 ⁇ cm, 11.7 ⁇ cm, and 11.4 ⁇ cm, respectively. It is shown that the specific resistances of the samples of the embodiments are lower by equal to or more than 1 ⁇ cm compared to those of the samples of the comparison examples.

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Abstract

A hole is formed in an insulating layer. A semiconductor substrate is heated at a temperature of equal to or more than 330° C. and equal to or less than 400° C. Tungsten-containing gas and at least one of B2H6 gas and SiH4 gas are introduced into a reaction chamber to thereby form a first tungsten layer. Subsequently, at least one of H2 gas and inert gas is introduced into the reaction chamber, the temperature of the semiconductor substrate is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds, and tungsten-containing gas is introduced into the reaction chamber to thereby form a second tungsten layer on the first tungsten layer.

Description

This application is based on Japanese patent application No. 2008-118516, the content of which is incorporated hereinto by reference.
BACKGROUND
1. Technical Field
The present invention relates to a method for manufacturing a semiconductor device using a process for forming a tungsten layer in a hole formed in an insulating layer.
2. Related Art
A contact plug is usually used to connect a transistor to an upper interconnect layer or to connect an interconnect layer to another interconnect layer. A contact plug is formed by forming a tungsten layer in a hole formed in an insulating interlayer, for example, as stated in Japanese Laid-open patent publication No. 11-87268, Japanese Laid-open patent publication No. 2007-9298, Japanese Patent Application National Publication (Laid-Open) No. 2001-525491, and U.S. Pat. No. 6,309,966.
Among Patent Documents, Japanese Laid-open patent publication No. 11-87268 discloses that in order to selectively grow a tungsten layer in a hole, a first tungsten layer is formed at a temperature of 200° C. to 260° C., and then a second tungsten layer is formed at a temperature of 280° C. to 340° C. According to Japanese Laid-open patent publication No. 11-87268, if the temperature is higher than the above temperature, resistance becomes larger, and the selective growth is impossible.
Japanese Patent Application National Publication (Laid-Open) No. 2001-525491 discloses that when a tungsten layer is formed by a nucleation step and a bulk deposition step, a pressure increasing step is performed between the nucleation step and the bulk deposition step. In the pressure increasing step, a tungsten-containing source is not contained in process gas. In Japanese Patent Application National Publication (Laid-Open) No. 2001-525491, a substrate temperature is set to 325° C. to 450° C.
SUMMARY
In order to make the resistance of a contact plug lower with maintaining reliability of the contact plug, it is effective to improve the fill capability of the tungsten layer to the hole formed in the insulating layer and to enlarge a grain size of the tungsten layer. On the other hand, it is important to improve productivity of a processing for manufacturing a semiconductor device.
In one embodiment, there is provided a method for manufacturing a semiconductor device, comprising: forming a hole in an insulating layer arranged above a surface of a semiconductor substrate; forming a first tungsten layer in the hole with heating the semiconductor substrate carried into a reaction chamber at a temperature of equal to or more than 330° C. and equal to or less than 400° C. and introducing tungsten-containing gas and at least one of B2H6 gas and SiH4 gas into the reaction chamber; introducing at least one of H2 gas and inert gas into the reaction chamber and raising the temperature of the semiconductor substrate to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds; and forming a second tungsten layer on the first tungsten layer by introducing tungsten-containing gas into the reaction chamber.
According to the present invention, the fill capability of the tungsten layer to the hole formed in the insulating layer is improved, and the grain size of the tungsten layer is enlarged. Further, productivity of the semiconductor device is improved.
BRIEF DESCRIPTION OF THE DRAWINGS
The above and other objects, advantages and features of the present invention will be more apparent from the following description of certain preferred embodiments taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a flowchart explaining a method for manufacturing a semiconductor device according to an exemplary embodiment of the present invention;
FIG. 2 is across-sectional view illustrating the method for manufacturing the semiconductor device according to the exemplary embodiment of the present invention;
FIG. 3 is a cross-sectional view illustrating the next process of FIG. 2;
FIG. 4 is a cross-sectional view illustrating the next process of FIG. 3;
FIG. 5 is a cross-sectional view illustrating the next process of FIG. 4;
FIG. 6 is a graph illustrating that the layer forming speed of a second tungsten layer depends on the substrate temperature; and
FIGS. 7A to 7E are scanning electron microscope (SEM) images which show cross sections of samples according to comparison examples 1 and 2 and embodiments 1 to 3.
 DETAILED DESCRIPTION
The invention will be now described herein with reference to illustrative embodiments. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiments illustrated for explanatory purposed.
Hereinafter, an exemplary embodiment of the present invention will be described with reference to attached drawings. In drawings, like reference numerals denote like parts, and duplicated description will not be repeated.
FIG. 1 is a flowchart illustrating a method for manufacturing a semiconductor device according to an exemplary embodiment of the present invention. In the method for manufacturing the semiconductor device, a hole is first formed in an insulating layer disposed above a surface of a semiconductor substrate (S10). The semiconductor substrate carried into a reaction chamber is heated at a temperature of equal to or more than 330° C. and equal to or less than 400° C. (S20). Subsequently, tungsten-containing gas and at least one of B2H6 gas and SiH4 gas are introduced into the reaction chamber to thereby form a first tungsten layer in the hole (S30). Then, at least one of H2 gas and inert gas is introduced into the reaction chamber, and the temperature of the semiconductor substrate is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds (S40) Then, tungsten-containing gas is introduced into the reaction chamber to thereby form a second tungsten layer on the first tungsten layer (S50).
Next, the method for manufacturing the semiconductor device according to the exemplary embodiment of the present invention will be described in detail with reference to cross-sectional views of FIGS. 2 to 5.
First, as shown in FIG. 2, an isolation layer 102 and transistors 120 and 140 are formed on a semiconductor substrate 100 such as, for example, a silicon substrate. The transistors 120 and 140 include silicide layers 122 and 142 on a gate electrode and silicide layers 124, 126, 144, and 146 on diffusion layers which work a source or a drain. The diffusion layer having the silicide layer 126 functions as not only a component of the transistor 120 but also a component of the transistor 140 located nearby the transistor 120. Then, an insulating interlayer 200 is formed on the transistors 120, 140 and the isolation layer 102. In FIG. 2, the insulating interlayer 200 has a multi-layer structure.
Subsequently, the insulating interlayer 200 is selectively removed using, for example, a mask pattern and an etching technique, so that holes 221, 222, 223, 224, and 225 are formed in the insulating interlayer 200. The hole 221 provides a space for forming a contact plug on the silicide layer 144 on the diffusion layer and the silicide layer 142 on the gate electrode in the transistor 140. The hole 222 provides a space for forming a contact plug on the silicide layer 144 on the diffusion layer of the transistor 140. The hole 223 provides a space for forming a contact plug on the silicide layer 126. The hole 224 provides a space for forming a contact plug on the silicide layer 122 on the gate electrode of the transistor 120. The hole 225 provides a space for forming a contact plug on the silicide layer 124 on the diffusion layer of the transistor 120. The diameter of the holes 221 to 225 is, for example, equal to or more than 50 nm and equal to or less than 130 nm.
Then, the semiconductor substrate 100 is carried into the reaction chamber. Barrier layers 230 are formed on bottom surfaces and sidewalls of the holes 221 to 225 and on the insulating interlayer 200. The barrier layer 230 functions to suppress tungsten from being diffused. The barrier layer 230 is formed by layers that a Ti layer and a TiN layer are deposited in order, or by a TiN layer.
Then, as shown in FIG. 3, the semiconductor substrate carried into the reaction chamber is heated at a temperature of equal to or more than 330° C. to equal to or less than 400° C., preferably, equal to or more than 330° C. to equal to or less than 360° C. Tungsten-containing gas, carrier gas, and at least one of B2H6 gas and SiH4 gas are introduced into the reaction chamber. As a result, a first tungsten layer 242 is formed on the barrier layer 230. At this time, the first tungsten layer 242 is formed even above a surface of the insulating interlayer 200. The first tungsten layer 242 has the thickness of, for example, equal to or more than 2 nm and equal to or less than 10 nm. The first tungsten layer 242 is formed even on the barrier layer 230 formed in the holes 221 to 225. For example, WF6 is used as tungsten-containing gas. For example, Ar is used as carrier gas, but carrier gas may contain N2. Tungsten-containing gas and at least one of B2H6 gas and SiH4 gas can be introduced into the reaction chamber simultaneously or alternately. The former is, for example, an atomic layer deposition (ALD). The latter preferably includes a process for putting purge gas (for example, same gas as carrier gas) between a process for introducing at least one of B2H6 gas and SiH4 gas and a process for introducing tungsten-containing gas.
Subsequently, at least one of H2 gas and inert gas is introduced into the reaction chamber, and the temperature of the semiconductor substrate 100 is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds. For example, rare gas such as Ar and N2 can be used as inert gas. Gases used in this process may be same as gases used in a process for forming a second tungsten layer 240 which will be described later without tungsten-containing gas is excluded. The temperature is preferably raised at a rate of equal to or more than 0.5° C./second and equal to or less than 2.5° C./second. A time taken to raise the temperature is preferably equal to or more than 40 seconds.
Subsequently, as shown in FIG. 4, tungsten-containing gas, H2 gas and carrier gas are introduced into the reaction chamber. As a result, the second tungsten layer 240 is formed on the first tungsten layer 242. At this time, the second tungsten layer 240 is formed even above a surface of the insulating interlayer 200. The second tungsten layer 240 has the thickness of, for example, equal to or more than 100 nm and equal to or less than 400 nm. The second tungsten layer 240 is also formed even on the first tungsten layer 242 formed in the holes 221 to 225. For example, WF6 is used as tungsten-containing gas. For example, Ar is used as carrier gas, but carrier gas may contain N2. In case where carrier gas contains N2, a surface of the second tungsten layer 240 becomes smooth.
Thereafter, as shown in FIG. 5, portions of the first tungsten layer 242 and the second tungsten layers 240 above the insulating interlayer 200 are removed. This removing process is performed using an etch-back technique or a chemical mechanical polishing (CMP) technique. As a result, a contact plug which includes the first tungsten layer 242 and the second tungsten layer 240 is embedded in the holes 221 to 225. Also, in this process, a portion of the barrier layer 233 above the insulating interlayer 200 may be removed.
Next, the effect of the present invention will be described. The substrate temperature when the first tungsten layer 242 is formed is equal to or more than 330° C. and equal to or less than 400° C., preferably, equal to or more than 330° C. and equal to or less than 360° C. As a result, the step coverage of the first tungsten layer 242 to the holes 221 to 225 is improved, and thus the fill capability of the second tungsten layer 240 is improved, whereby reliability of the contact plug is improved. If the substrate temperature is raised more than it, the step coverage of the first tungsten layer 242 to the holes 221 to 225 gets worse, and thus the fill capability of the second tungsten layer 240 gets worse.
The substrate temperature when the second tungsten layer 240 is formed is higher than when the first tungsten layer 242 is formed and is equal to or more than 370° C. and equal to or less than 410° C.
FIG. 6 is a graph illustrating that the deposition rate of the second tungsten layer 240 depends on the substrate temperature. According to the graph, the deposition rate of the second tungsten layer 240 is 50 nm/minute when the substrate temperature is 330° C. The deposition rate of the second tungsten layer 240 are 285 nm/minute and 500 nm/minute respectively, when the substrate temperatures are 410° C. and 450° C. Therefore, it is understood that if the substrate temperature is raised before the second tungsten layer 240 is formed, the deposition rate is increased, whereby productivity of the semiconductor device is improved.
Before forming the second tungsten layer 240 and after forming the first tungsten layer 242, at least one of H2 gas and inert gas is introduced into the reaction chamber, and the temperature of the semiconductor substrate is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds. As a result, gas absorbed into the first tungsten layer 242 is removed, so the grain size of the second tungsten layer 240 is enlarged, whereby resistance of the contact plug is lowered. This effect is remarkable when SiH4 gas other than B2H6 gas is used in the process for forming the first tungsten layer 242.
As described above, according to the exemplary embodiment of the present invention, the substrate temperature when forming the first tungsten layer 242 is set to equal to or more than 330° C. and equal to or less than 400° C., the substrate temperature when forming the second tungsten layer 240 is set to equal to or more than 370° C. and equal to or less than 410° C., at least one of H2 gas and inert gas is introduced into the reaction chamber before forming the second tungsten layer 240 after forming the first tungsten layer 242, and the substrate temperature is raised with 30 or more seconds. Accordingly, resistance can lowered while improving reliability of the contact plug, and productivity of the semiconductor device can be improved.
In FIGS. 2 to 5, the contact plug is embedded in the insulating interlayer of a first layer, but the technology disclosed in the exemplary embodiment described above can be applied when the contact plug is formed in the insulating interlayer of a second or more above layer.
Embodiment
Samples according to embodiments 1 to 3 are manufactured by the method disclosed in the exemplary embodiment of the present invention described above in each embodiment, when forming the first tungsten layer 242, SiH4 gas, WF6 gas, and Ar gas are introduced into the reaction chamber, and the substrate temperature is set to 350° C. In this process, SiH4 gas and WF6 gas are alternately introduced total six times. Also, when forming the second tungsten layer 240, H2 gas, WF6 gas, N2 gas, and Ar gas are introduced into the reaction chamber, and the substrate temperature is set to 390° C. The substrate temperature is raised while forming the second tungsten layer 240 after forming the first tungsten layer 242. The length of the time raising temperature of the substrate is set to 30 seconds in the embodiment 1, 40 seconds in the embodiment 2 and 50 seconds in the third embodiment.
Also, samples according to comparison examples 1 and 2 are manufactured. The manufacturing conditions of the comparison examples 1 and 2 are same as those of the embodiments 1 to 3 except that the length of the time raising temperature of the substrate is set to 8 seconds and 20 seconds, respectively.
FIGS. 7A to 7E are scanning electron microscope (SEM) images which show cross sections of the samples according to the comparison examples 1 and 2 and the embodiments 1 to 3. These photographs show the first tungsten layer 242 and the second tungsten layer 240 which are formed on the insulating interlayer. When FIGS. 7A and 7B are compared to FIGS. 7C to 7E, it is understood that the grain size of the second tungsten layer 240 in the embodiments 1 to 3 is larger than the grain size of the second tungsten layer 240 in the comparison examples 1 and 2. Such a tendency is remarkable in the embodiments 2 and 3, that is, when the length of the time raising temperature of the substrate is 40 or more seconds.
Table 1 shows the manufacturing condition, the sheet resistance, the layer thickness, and the specific resistance of the embodiments 1 to 3 and the comparison examples 1 and 2.
TABLE 1
LAYER FORMING LAYER FORMING
TEMPERATURE TEMPERATURE
TEMPERATURE OF FIRST OF SECOND SHEET LAYER SPECIFIC
RAISING TIME TUNGSTEN LAYER TUNGSTEN LAYER RESISTANCE THICKNESS RESISTANCE
(SECOND) (° C.) (° C.) (Ω/□.) (nm) (uΩcm)
EMBODIMENT 1 30 350 390 0.484 266 12.9
EMBODIMENT 2 40 350 390 0.459 254 11.7
EMBODIMENT 3 50 350 390 0.452 252 11.4
COMPARISON 8 350 390 0.538 289 15.6
EXAMPLE 1
COMPARISON 20 350 390 0.529 263 13.9
EXAMPLE 2
In the samples of the comparison examples 1 and 2, the sheet resistances are 0.538Ω/□ and 0.529Ω/□, respectively. On the other hand, in the samples of the embodiments 1 to 3, the sheet resistances are 0.484Ω/□, 0.459Ω/□, and 0.452Ω/□, respectively. It is shown that the sheet resistances of the samples of the embodiments are lower by equal to or more than 0.04Ω/□ compared to those of the samples of the comparison examples.
Also, in the samples of the comparison examples 1 and 2, the specific resistances are 15.6 μΩ·cm, 13.9 μΩ·cm, respectively. On the other hand, in the samples of the embodiments 1 to 3, the specific resistances are 12.9 μΩ·cm, 11.7 μΩ·cm, and 11.4 μΩ·cm, respectively. It is shown that the specific resistances of the samples of the embodiments are lower by equal to or more than 1 μΩ·cm compared to those of the samples of the comparison examples.
Hereinbefore, the exemplary embodiment of the present invention has been described with reference to the drawings, but these are for illustrative purposes and can employ various configurations other than described above.
It is apparent that the present invention is not limited to the above embodiment, and may be modified and changed without departing from the scope and spirit of the invention.

Claims (14)

1. A method of manufacturing a semiconductor device, comprising, in the following order:
forming a hole in an insulating layer arranged above a surface of a semiconductor substrate;
forming a first tungsten layer in said hole by heating said semiconductor substrate carried into a reaction chamber at a temperature of equal to or more than 330° C. and equal to or less than 400° C. and introducing tungsten-containing gas and at least one of B2H6 gas and SiH4 gas into said reaction chamber;
introducing at least one of H2 gas and inert gas into said reaction chamber and raising the temperature of said semiconductor substrate to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds; and
forming a second tungsten layer on said first tungsten layer by introducing tungsten-containing gas into said reaction chamber.
2. The method according to claim 1,
wherein in said forming said first tungsten layer, said semiconductor substrate is heated at a temperature of equal to or more than 330° C. and equal to or less than 360° C.
3. The method according to claim 1,
wherein in said temperature of the semiconductor substrate, the temperature raising speed is equal to or more than 0.5° C./seconds and equal to or less than 2.5° C./seconds.
4. The method according to claim 1,
wherein in said for raising the temperature of said semiconductor substrate, 40 or more seconds is taken to raise the temperature of said semiconductor substrate.
5. The method according to claim 1,
wherein in said forming said first tungsten layer and in said forming said second tungsten layer, said first tungsten layer and said second tungsten layer are formed even above a surface of said insulating layer,
and after forming said second tungsten layer, a step for removing portions of said first tungsten layer and said second tungsten layer above the surface of said insulating layer is performed.
6. The method according to claim 1,
wherein in said forming said first tungsten layer, SiH4 gas and tungsten-containing gas are introduced into said reaction chamber.
7. A method of manufacturing a semiconductor device, comprising:
forming a hole in an insulating layer arranged above a surface of a semiconductor substrate;
forming a first tungsten layer on a bottom and side surfaces of said hole by heating said semiconductor substrate in a reaction chamber to a first temperature of equal to or more than 330° C. and equal to or less than 400° C. and introducing tungsten-containing gas and at least one of B2H6 gas and SiH4 gas into said reaction chamber;
introducing at least one of H2 gas and inert gas into said reaction chamber and raising a temperature of said semiconductor substrate to a second temperature higher than said first temperature and equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds; and
forming a second tungsten layer on said first tungsten layer by introducing tungsten-containing gas into said reaction chamber, said second tungsten layer filling said hole.
8. The method according to claim 7,
wherein in said forming said first tungsten layer, said semiconductor substrate is heated at a temperature of equal to or more than 330° C. and equal to or less than 360° C.
9. The method according to claim 7,
wherein in said heating the semiconductor substrate, a temperature raising speed is equal to or more than 0.5° C./seconds and equal to or less than 2.5° C./seconds.
10. The method according to claim 7,
wherein in said raising the temperature of said semiconductor substrate, 40 or more seconds is taken to raise the temperature of said semiconductor substrate.
11. The method according to claim 7,
wherein in said forming said first tungsten layer and in said forming said second tungsten layer, said first tungsten layer and said second tungsten layer are formed above a surface of said insulating layer,
and after forming said second tungsten layer, a step for removing portions of said first tungsten layer and said second tungsten layer above the surface of said insulating layer.
12. The method according to claim 7,
wherein in said forming said first tungsten layer, SiH4 gas and tungsten-containing gas are introduced into said reaction chamber.
13. The method according to claim 7,
wherein a barrier layer is formed on a bottom and side wall of said hole prior to forming said first tungsten layer.
14. The method according to claim 7,
wherein said tungsten-containing gas and SiH4 are introduced into the reaction chamber simultaneously.
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