US7056872B2 - Solution composition for removing a remaining photoresist resin - Google Patents

Solution composition for removing a remaining photoresist resin Download PDF

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US7056872B2
US7056872B2 US10/252,467 US25246702A US7056872B2 US 7056872 B2 US7056872 B2 US 7056872B2 US 25246702 A US25246702 A US 25246702A US 7056872 B2 US7056872 B2 US 7056872B2
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weight
parts
cleaning solution
photoresist
removing material
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US20030060382A1 (en
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Geun Su Lee
Jae Chang Chung
Ki Soo Shin
Kee Joon Oh
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SK Hynix Inc
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Hynix Semiconductor Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • a cleaning solution is disclosed for removing photoresist resins remaining on underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask.
  • Conventional cleaning solutions to remove photoresist remaining on the top portion of an underlying layer are generally organic solvent including amine (—NH 2 ) compounds.
  • FIG. 1 is a SEM photograph of a formed aluminum pattern after cleaning the remaining photoresist on the aluminum pattern using a conventional mixed cleaning solution of H 2 O 2 /H 2 SO 4 /H 2 O. As shown in FIG. 1 , the lateral surface of the A1 pattern is severely damaged when the photoresist remaining on the A1 pattern is cleaned with the mixed solution of H 2 O 2 /H 2 SO 4 /H 2 O.
  • FIG. 2 is a SEM photograph of a formed tungsten pattern after cleaning the remaining photoresist on the tungsten pattern using a conventional mixed cleaning solution of H 2 O 2 /H 2 SO 4 /H 2 O. As shown in FIG. 2 , the lateral surface of the W pattern is severely damaged when the photoresist remaining on the W pattern is cleaned with the mixed solution of H 2 O 2 /H 2 SO 4 /H 2 O.
  • a cleaning solution for removing photoresist which comprises water (H 2 O) as the main solvent and amine compounds.
  • a method for forming an underlying layer pattern of a semiconductor device which uses the disclosed cleaning solution for removing photoresist material.
  • FIG. 1 is a SEM photograph of a resultant pattern after cleaning a remaining photoresist on the aluminum pattern using a conventional cleaning solution
  • FIG. 2 is a SEM photograph of a resultant pattern after cleaning a remaining photoresist on the tungsten pattern using a conventional cleaning solution;
  • FIG. 3 is a SEM photograph of an aluminum pattern
  • FIG. 4 a is a SEM photograph of an aluminum pattern after cleaning the remaining photoresist of FIG. 3 using a disclosed cleaning solution
  • FIG. 4 b is a SEM photograph illustrating an aluminum pattern after cleaning the remaining photoresist of FIG. 3 using a disclosed cleaning solution.
  • a disclosed cleaning solution for removing photoresist materials comprises: H 2 O, amine compounds and optionally one or more of hydrazine hydrate, transition metal-removing material and alkali metal-removing material.
  • the H 2 O, the main solvent is preferably distilled water.
  • the amine compounds dissolve the photoresist material. It is preferable that the amine compounds are selected from the group consisting of NH 2 (CH 2 ) n OH (wherein, n is an integer from 0 to 10), N(C m H 2m+1 ) 3 (wherein, m is an integer from 1 to 10), N(C 1 H 21 OH) 3 (wherein, 1 is an integer from 1 to 10), NH 4 OH, NH 4 Cl, NH 4 F and mixtures thereof, and the amine compounds are present in an amount ranging from about 1 to about 50 parts by weight, preferably from about 10 to about 30 parts by weight, and more preferably from about 15 to about 25 parts by weight to 100 parts by weight of the H 2 O.
  • the amount of the amine compounds is less than 1 part by weight, it is difficult to remove photoresist, while when it is more than 50 parts by weight, it has cost problem.
  • the hydrazine hydrate NH 2 NH 2 .xH 2 O prevents oxidation of metal, when the underlying layer is formed of metal such as aluminum and tungsten. It is preferable that the hydrazine hydrate is present in an amount ranging from about 0.01 to about 20 parts by weight to 100 parts by weight of the H 2 O. However, when the underlying layer is formed of non-metal, the cleaning solution need not comprise the hydrazine hydrate.
  • the transition metal-removing material removes particles of transition metal existing on the underlying layer surface or in the photoresist. It is preferable that the transition metal-removing material is selected from the group consisting of ethylenenediaminetetraacectic acid (EDTA), 2,2′-dipyridyl, 2,2′-dipyridylamine, 1,4,8,12-tetraazacyclopentadecane, 1,4,8,11-tetraazacyclotetradecane, 1,4,8,11-tetraazacyclotetradecane-5,7-dione, 1,4,8,11-tetraazacyclotetradecane-1,4,8,11-tetraacetic acid and mixtures thereof, and the transition metal-removing material is present in an amount ranging from about 0.01 to about 10 parts by weight to 100 parts by weight of the H 2 O.
  • EDTA ethylenenediaminetetraacectic acid
  • 2,2′-dipyridyl 2,2′-dipyridylamine
  • the alkali metal-removing material removes particles of alkali metal existing on the underlying layer surface or in the photoresist. It is preferable that the alkali metal-removing material is selected from the group consisting of 15-crown-5, 18-crown-6, 1-aza-12-crown-4, 1-aza-15-crown-5, 1-aza-18-crown-6, polyethylene oxide, ethylene glycol, diethylene glycol, triethylen glycol, tetraethylene glycol, catechol and mixtures thereof, and the alkali metal-removing material is present in an amount ranging from about 0.01 to about 10 parts by weight to 100 parts by weight of the H 2 O.
  • the cleaning solution preferably comprises the amine compounds, the hydrazine hydrate, the transition metal-removing material and the alkali metal-removing material in proportion of 15:25 parts by weight: 0.1:5 parts by weight: 0.1:5 parts by weight: 0.01:5 parts by weight to 100 parts by weight of the H 2 O.
  • a method of forming an underlying layer pattern of a semiconductor device comprising: forming an underlying layer on a wafer; forming a photoresist pattern on the top portion of the underlying layer using a photolithography process; forming an underlying layer pattern by etching the underlying layer using the photoresist pattern as etching mask; and cleaning the resultant using the disclosed cleaning solution to remove photoresist remaining on the underlying layer pattern.
  • the underlying layer may be a metal layer, an insulating layer or a conductive layer.
  • Example 1 The procedure of Example 1 was repeated but using cleaning solution prepared in Example 2 instead of Example 1. As a result, the soaked portion had the thickness of 3100 ⁇ reduced by 1900 ⁇ . The soaked portion of the photoresist was removed from the wafer and floated in the solution.
  • Example 1 The procedure of Example 1 was repeated but using the cleaning solution prepared in Example 3 instead of Example 1. As a result, the soaked portion had the thickness of 2600 ⁇ reduced by 2400 ⁇ . There was no floating photoresist.
  • Example 6 shows that photoresist resin which was removed from the wafer was dissolved in hydrophobic amine because the excessive amount of hydrophobic amine such as N(C 2 H 4 ) 3 or N(C 8 H 17 ) 3 was used.
  • photoresist was coated on the top portion of the aluminum layer. Then, a photoresist pattern was formed using a photolithography process.
  • an aluminum pattern 12 was obtained by etching the aluminum layer using the photoresist pattern as etching mask, and a photoresist pattern was removed.
  • photoresist 14 remained on the top portion of the aluminum pattern 12 (see FIG. 3 ).
  • the above resultant was soaked in the cleaning solution prepared in Example 3 at room temperature for 5 minutes. Then, the resultant was cleaned with distilled water. Here, it was shown that the remaining photoresist 14 was removed and the aluminum pattern 12 was scarcely damaged by the cleaning solution (see FIGS. 4 a and 4 b ).
  • cleaning solution for removing photoresist including H 2 O as main solvent, amine compounds and optionally one or more of hydrazine hydrate, transition metal-removing material and alkali metal-removing material according to this disclosure can rapidly and effectively remove photoresist coated on the top portion of an underlying layer on the wafer, have little effect on metal layers when an underlying layer is formed of metal and be environmental friendlier alternative to currently available cleaning solutions.

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Abstract

Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises H2O as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because H2O is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.

Description

BACKGROUND
1. Technical Field
A cleaning solution is disclosed for removing photoresist resins remaining on underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask.
2. Description of the Related Art
Conventional cleaning solutions to remove photoresist remaining on the top portion of an underlying layer are generally organic solvent including amine (—NH2) compounds.
However, conventional cleaning solutions for removing photoresist are environmentally harmful because they include excessive amounts of amine compounds and rely upon organic solvents. Conventional cleaning solutions also have a problem in that they are expensive.
Mixed solutions of H2O2/H2SO4/H2O have been also used as conventional cleaning solutions for removing photoresists. However, there is a problem in that the mixed solution erodes metal, and therefore, an underlying layer pattern is deformed when the underlying layer is metal.
FIG. 1 is a SEM photograph of a formed aluminum pattern after cleaning the remaining photoresist on the aluminum pattern using a conventional mixed cleaning solution of H2O2/H2SO4/H2O. As shown in FIG. 1, the lateral surface of the A1 pattern is severely damaged when the photoresist remaining on the A1 pattern is cleaned with the mixed solution of H2O2/H2SO4/H2O.
FIG. 2 is a SEM photograph of a formed tungsten pattern after cleaning the remaining photoresist on the tungsten pattern using a conventional mixed cleaning solution of H2O2/H2SO4/H2O. As shown in FIG. 2, the lateral surface of the W pattern is severely damaged when the photoresist remaining on the W pattern is cleaned with the mixed solution of H2O2/H2SO4/H2O.
SUMMARY OF THE DISCLOSURE
A cleaning solution for removing photoresist is disclosed which comprises water (H2O) as the main solvent and amine compounds.
A method for forming an underlying layer pattern of a semiconductor device is disclosed which uses the disclosed cleaning solution for removing photoresist material.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a SEM photograph of a resultant pattern after cleaning a remaining photoresist on the aluminum pattern using a conventional cleaning solution;
FIG. 2 is a SEM photograph of a resultant pattern after cleaning a remaining photoresist on the tungsten pattern using a conventional cleaning solution;
FIG. 3 is a SEM photograph of an aluminum pattern;
FIG. 4 a is a SEM photograph of an aluminum pattern after cleaning the remaining photoresist of FIG. 3 using a disclosed cleaning solution; and
FIG. 4 b is a SEM photograph illustrating an aluminum pattern after cleaning the remaining photoresist of FIG. 3 using a disclosed cleaning solution.
 DETAILED DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS
A disclosed cleaning solution for removing photoresist materials comprises: H2O, amine compounds and optionally one or more of hydrazine hydrate, transition metal-removing material and alkali metal-removing material.
The H2O, the main solvent is preferably distilled water.
The amine compounds dissolve the photoresist material. It is preferable that the amine compounds are selected from the group consisting of NH2(CH2)nOH (wherein, n is an integer from 0 to 10), N(CmH2m+1)3 (wherein, m is an integer from 1 to 10), N(C1H21OH)3 (wherein, 1 is an integer from 1 to 10), NH4OH, NH4Cl, NH4F and mixtures thereof, and the amine compounds are present in an amount ranging from about 1 to about 50 parts by weight, preferably from about 10 to about 30 parts by weight, and more preferably from about 15 to about 25 parts by weight to 100 parts by weight of the H2O.
When the amount of the amine compounds is less than 1 part by weight, it is difficult to remove photoresist, while when it is more than 50 parts by weight, it has cost problem.
The hydrazine hydrate NH2NH2.xH2O prevents oxidation of metal, when the underlying layer is formed of metal such as aluminum and tungsten. It is preferable that the hydrazine hydrate is present in an amount ranging from about 0.01 to about 20 parts by weight to 100 parts by weight of the H2O. However, when the underlying layer is formed of non-metal, the cleaning solution need not comprise the hydrazine hydrate.
The transition metal-removing material removes particles of transition metal existing on the underlying layer surface or in the photoresist. It is preferable that the transition metal-removing material is selected from the group consisting of ethylenenediaminetetraacectic acid (EDTA), 2,2′-dipyridyl, 2,2′-dipyridylamine, 1,4,8,12-tetraazacyclopentadecane, 1,4,8,11-tetraazacyclotetradecane, 1,4,8,11-tetraazacyclotetradecane-5,7-dione, 1,4,8,11-tetraazacyclotetradecane-1,4,8,11-tetraacetic acid and mixtures thereof, and the transition metal-removing material is present in an amount ranging from about 0.01 to about 10 parts by weight to 100 parts by weight of the H2O.
The alkali metal-removing material removes particles of alkali metal existing on the underlying layer surface or in the photoresist. It is preferable that the alkali metal-removing material is selected from the group consisting of 15-crown-5, 18-crown-6, 1-aza-12-crown-4, 1-aza-15-crown-5, 1-aza-18-crown-6, polyethylene oxide, ethylene glycol, diethylene glycol, triethylen glycol, tetraethylene glycol, catechol and mixtures thereof, and the alkali metal-removing material is present in an amount ranging from about 0.01 to about 10 parts by weight to 100 parts by weight of the H2O.
The cleaning solution preferably comprises the amine compounds, the hydrazine hydrate, the transition metal-removing material and the alkali metal-removing material in proportion of 15:25 parts by weight: 0.1:5 parts by weight: 0.1:5 parts by weight: 0.01:5 parts by weight to 100 parts by weight of the H2O.
There is also provided a method of forming an underlying layer pattern of a semiconductor device, comprising: forming an underlying layer on a wafer; forming a photoresist pattern on the top portion of the underlying layer using a photolithography process; forming an underlying layer pattern by etching the underlying layer using the photoresist pattern as etching mask; and cleaning the resultant using the disclosed cleaning solution to remove photoresist remaining on the underlying layer pattern.
Here, the underlying layer may be a metal layer, an insulating layer or a conductive layer.
The disclosed cleaning solution for removing photoresist will now be described in more details referring to examples below, when are not intended to be limiting.
EXAMPLE 1 Preparation of Cleaning Solution for Removing Photoresist (1)
Distilled water (1L), 28 wt % of NH4OH aqueous solution (50 ml), 50 wt % of NH2OH aqueous solution (10 ml), N(C2H4OH)3 (100 ml), NH2NH2.H2O (1 g), EDTA (0.1 g), 18-crown-6 (0.01 g) and polyethylene oxide having weight average molecular weight of 100,000 (0.1 g) were stirred at room temperature for 10 minutes. The resulting mixture was filtered through 0.2 μm filter to obtain cleaning solution for removing photoresist.
EXAMPLE 2 Preparation of Cleaning Solution for Removing Photoresist (2)
Distilled water (1L), 28 wt % of NH4OH aqueous solution (40 ml), 50 wt % of NH2OH aqueous solution (40 ml), N(CH2OH)3 (150 ml), NH2NH2.H2O (1 g), 1,4,8,11-tetraazacyclotetradecane-1,4,8,11-tetraacetic acid (0.01 g), diethylene glycol (1 g) and polyethylene oxide having weight average molecular weight of 100,000 (0.1 g) were stirred at room temperature for 10 minutes. The resulting mixture was filtered through 0.2 μm filter to obtain cleaning solution for removing photoresist.
EXAMPLE 3 Preparation of Cleaning Solution for Removing Photoresist (3)
Distilled water (1L), 28 wt % of NH4OH aqueous solution (40 ml), 50 wt % of NH2OH aqueous solution (40 ml), N(C2H4OH)3 (200 ml), N(C8H17)3 (10 ml), NH2NH2.H2O (1 g), 1,4,8,11-tetraazacyclotetradecane-1,4,8,11-tetraacetic acid (0.01 g), diethylene glycol (1 g) and polyethylene oxide having weight average molecular weight of 100,000 (0.1 g) were stirred at room temperature for 10 minutes. The resulting mixture was filtered through 0.2 μm filter to obtain cleaning solution for removing photoresist.
EXAMPLE 4 Removal of Photoresist Using the Cleaning Solution (1)
After a wafer coated with KrF photoresist, SE430S produced by Shin-Etsu Co. in Japan at a thickness of 5000 Å was set up in the cleaning solution prepared in Example 1, ⅓ of the wafer and the photoresist was soaked in the cleaning solution for 10 minutes. Then, thickness of the soaked and unsoaked portions was compared. As a result, the soaked portion had the thickness of 3500 Å reduced by 1500 Å. The soaked portion of the photoresist was removed from the wafer and floated in the solution.
EXAMPLE 5 Removal of Photoresist Using the Cleaning Solution (2)
The procedure of Example 1 was repeated but using cleaning solution prepared in Example 2 instead of Example 1. As a result, the soaked portion had the thickness of 3100 Å reduced by 1900 Å. The soaked portion of the photoresist was removed from the wafer and floated in the solution.
EXAMPLE 6 Removal of Photoresist Using the Cleaning Solution (3)
The procedure of Example 1 was repeated but using the cleaning solution prepared in Example 3 instead of Example 1. As a result, the soaked portion had the thickness of 2600 Å reduced by 2400 Å. There was no floating photoresist.
Referring to results of Examples 4 to 6, while the soaked portion of photoresist was removed from the wafer and floated in Examples 4 and 5, there was no floating photoresist in Example 6. This result of Example 6 shows that photoresist resin which was removed from the wafer was dissolved in hydrophobic amine because the excessive amount of hydrophobic amine such as N(C2H4)3 or N(C8H17)3 was used.
EXAMPLE 7 Removal of Photoresist Remaining on Aluminum Pattern Using the Cleaning Solution
After an aluminum layer was formed on a wafer 10 according to a conventional semiconductor process, photoresist was coated on the top portion of the aluminum layer. Then, a photoresist pattern was formed using a photolithography process.
Thereafter, an aluminum pattern 12 was obtained by etching the aluminum layer using the photoresist pattern as etching mask, and a photoresist pattern was removed. Here, it was shown that photoresist 14 remained on the top portion of the aluminum pattern 12 (see FIG. 3).
The above resultant was soaked in the cleaning solution prepared in Example 3 at room temperature for 5 minutes. Then, the resultant was cleaned with distilled water. Here, it was shown that the remaining photoresist 14 was removed and the aluminum pattern 12 was scarcely damaged by the cleaning solution (see FIGS. 4 a and 4 b).
As discussed earlier, cleaning solution for removing photoresist including H2O as main solvent, amine compounds and optionally one or more of hydrazine hydrate, transition metal-removing material and alkali metal-removing material according to this disclosure can rapidly and effectively remove photoresist coated on the top portion of an underlying layer on the wafer, have little effect on metal layers when an underlying layer is formed of metal and be environmental friendlier alternative to currently available cleaning solutions.

Claims (10)

1. A cleaning solution for removing photoresist material consisting essentially of H2O, amine compounds in an amount ranging from 1 to 50 parts by weight to 100 parts by weight of the H2O, hydrazine hydrate in an amount ranging from 0.01 to 20 parts by weight to 100 parts by weight of the H2O, transition metal-removing material in an amount ranging from 0.01 to 10 parts by weight to 100 parts by weight of the H2O, and alkali metal-removing material in an amount ranging from about 0.01 to about 10 parts by weight by weight to 100 parts by weight of the H2O.
2. The cleaning solution according to claim 1, the amine compounds are present in an amount ranging from about 10 to about 30 parts by weight to 100 parts by weight of the H2O.
3. The cleaning solution according to claim 2, the amine compounds are present in an amount ranging from about 15 to about 25 parts by weight to 100 parts by weight of the H2O.
4. The cleaning solution according to claim 1, wherein the amine compounds are selected from the group consisting of NH2(CH2)nOH (wherein, n is an integer from 0 to 10), N(CmH2m+1)3 (wherein, m is an integer from 1 to 10), N(C1H21OH)3 (wherein, 1 is an integer from 1 to 10), NH4OH, NH4C, NH4F and mixtures thereof.
5. The cleaning solution according to claim 1, wherein the transition metal-removing material is selected from the group consisting of ethylenediaminetetraacectic acid (EDTA), 2,2′-dipyridyl, 2,2′-dipyridylamine, 1,4,8,12-tetraazacyclopentadecane, 1,4,8,11-tetraazacyclotetradecane, 1,4,8,11-tetraazacyclotetradecane-5,7-dione, 1,4,8,11-tetraazacyclotetradecane-1,4,8,11-tetraacetic acid and mixtures thereof.
6. The cleaning solution according to claim 1, wherein the alkali metal-removing material is selected from the group consisting of 15-crown-5, 18-crown-6, 1-aza-12-crown-4, 1-aza-15-crown-5, 1-aza-18-crown-6, polyethylene oxide, ethylene glycol, diethylene glycol, triethylen glycol, tetraethylene glycol, catechol and mixtures thereof.
7. The cleaning solution according to claim 1, wherein the solution comprises amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material in proportion of 15˜25 parts by weight: 0.185 parts by weight: 0.1˜5 parts by weight: 0.01˜5 parts by weight to 100 parts by weight of the H2O.
8. The cleaning solution according to claim 1, wherein the solution comprises mixture of NH4OH, NH2OH and N(C2H4OH)3 as the amine compounds, EDTA as the transition metal-removing material, and mixture of 18-crown-6 and polyethylene oxide as alkali metal-removing material.
9. The cleaning solution according to claim 1, wherein the solution comprises mixture of NH4OH, NH2OH and N(C2H4OH)3 as the amine compounds, 1,4,8,11-tetraazacyclotetradecane-1,4,8,11-tetraacetic acid as the transition metal-removing material, and mixture of diethylene glycol and polyethylene oxide as alkali metal-removing material.
10. The cleaning solution according to claim 1, wherein the solution comprises mixture of NH4OH, NH2OH, N(C2H4OH)3 and N(C8H17)3 as the amine compounds, 1,4,8,11-tetraazacyclotetradecane-1,4,8,11-tetraacetic acid as the transition metal-removing material, and mixture of diethylene glycol and polyethylene oxide as alkali metal-removing material.
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