US6705910B2 - Manufacturing method for an electron-emitting source of triode structure - Google Patents
Manufacturing method for an electron-emitting source of triode structure Download PDFInfo
- Publication number
- US6705910B2 US6705910B2 US10/067,315 US6731502A US6705910B2 US 6705910 B2 US6705910 B2 US 6705910B2 US 6731502 A US6731502 A US 6731502A US 6705910 B2 US6705910 B2 US 6705910B2
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- United States
- Prior art keywords
- layer
- electron
- manufacturing
- emitting source
- triode structure
- Prior art date
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- Expired - Fee Related, expires
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Definitions
- the present invention relates in general to a manufacturing method for an electron-emitting source.
- the present invention relates to a manufacturing method for an electron-emitting source of triode structure.
- the present invention is intended to overcome the above-described disadvantages.
- the first object of the present invention is to provide a manufacturing method for an electron-emitting source of triode structure, comprising the steps of forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer wherein the opening has a surrounding region and forming a gate layer on the dielectric layer, except on the surrounding region, forming a hydrophilic layer in the opening, forming a hydrophobic layer on the gate layer and the surrounding region wherein the hydrophobic layer contacts the ends of the hydrophilic layer, dispersing a carbon nanotube solution on the hydrophilic layer using ink jet printing; and executing a thermal process step, and removing the hydrophobic layer.
- carbon nanotubes are accurately deposited over a large area using ink jet printing.
- the second object of the present invention is to provide a manufacturing method for an electron-emitting source of triode structure, comprising the steps of forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a sacrificial layer on the gate layer and the surrounding region, wherein the opening and the cathode layer are exposed, dispersing a carbon nanotube solution in the opening using screen printing, executing a thermal process step, and removing the sacrificial layer.
- carbon nanotubes are successfully deposited over a large area using screen printing.
- the third object of the present invention is to provide a manufacturing method for an electron-emitting source of triode structure, comprising the steps of forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a carbon nanotube photoresist layer on the gate layer and covering the opening using spin coating, and patterning the carbon nanotubes photoresist layer in a predetermined pattern, and executing a thermal process step.
- carbon nanotubes are successfully deposited over a large area using spin coating.
- the fourth object of the present invention is to provide a manufacturing method for an electron-emitting source of triode structure, comprising the steps of forming a cathode layer on a substrate forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a sacrificial layer on the gate layer and the surrounding region, wherein the opening is exposed, forming an adhesive layer in the opening, forming a carbon nanotube layer on the adhesive layer using an electrophoretic deposition step, executing a thermal process step, and removing the sacrificial layer.
- FIGS. 1 a to 1 h are sectional views showing a process for manufacturing an electron-emitting source of triode structure in accordance with embodiment 1 of the present invention
- FIGS. 2 a to 2 h are sectional views showing a process for manufacturing an electron-emitting source of triode structure in accordance with embodiment 2 of the present invention
- FIGS. 3 a to 3 h are sectional views showing a process for manufacturing an electron-emitting source of triode structure in accordance with embodiment 3 of the present invention
- FIGS. 4 a to 4 g are sectional views showing a process for manufacturing an electron-emitting source of triode structure in accordance with embodiment 4 of the present invention.
- FIGS. 5 a to 5 c are sectional views showing cathode electrophoretic deposition, anode electrophoretic deposition, and suspensing electrophoretic deposition respectively.
- FIGS. 1 a to 1 h are sectional views showing a process for manufacturing an electron-emitting source of triode structure using ink jet printing.
- a substrate 10 is provided.
- a cathode layer 12 is deposited on the substrate 10 .
- a dielectric layer 14 is deposited on the cathode layer 12 , and an opening 13 is positioned in the dielectric layer 14 to expose the cathode layer 12 , wherein the opening 13 has a surrounding region 15 .
- a gate layer 16 is deposited on the dielectric layer 14 except the surrounding region 15 .
- a gate hole 17 is formed after depositing the gate layer 16 .
- a hydrophilic layer 18 is deposited in the gate hole 17 . Because the hydrophilic layer 18 absorbs the water of a carbon nanotube solution used in this embodiment, it successfully prevents the CNT solution from overflowing the gate hole 17 .
- a hydrophobic layer 20 is deposited on the surface of the gate layer 16 and the surrounding region 15 , wherein the hydrophobic layer 20 contacts the ends of the hydrophilic layer 18 . Because the hydrophobic layer 20 defines the position where CNT solution formed on the cathode layer 12 and prevents CNT solution from being absorbed into the sidewalls of the gate hole 17 , it successfully solves the leakage current or short problems caused by the residue of the CNT solution between the cathode layer 12 and the gate layer 16 after thermal process step.
- a CNT solution 22 is dispersed on the hydrophilic layer 18 using ink jet printing. Finally, a thermal process step is executed, and the hydrophobic layer 20 is removed to form a CNT emitter 24 , as shown in FIG. 1 h.
- carbon nanotubes are accurately deposited over a large area using ink jet printing, and an electron-emitting source of triode structure having good properties, and used as CNT-FED, is obtained.
- the substrate 10 is preferably made of glass.
- the cathode layer 12 or the gate layer 16 is preferably composed of electric conductors such as silver.
- the hydrophobic layer 20 is preferably composed of hydrophobic materials such as hydrophobic photoresist. The above thermal process preferably adopts a sintering step.
- FIGS. 2 a to 2 h are sectional views showing a process for manufacturing an electron-emitting source of triode structure using screen printing.
- a substrate 30 is provided.
- a cathode layer 32 is deposited on the substrate 30 .
- a dielectric layer 34 is deposited on the cathode layer 32 , and an opening 33 is positioned in the dielectric layer 34 to expose the cathode layer 32 , wherein the opening 33 has a surrounding region 35 .
- a gate layer 36 is deposited on the dielectric layer 34 except the surrounding region 35 .
- a gate hole 37 is formed after depositing the gate layer 36 .
- a sacrificial layer 38 is deposited on the surface of the gate layer 36 and the surrounding region 35 , wherein the gate hole 37 and the cathode layer 32 are exposed. Because the sacrificial layer 38 defines the position where the CNT solution is formed on the cathode layer 32 , and prevents CNT solution from being absorbed into the sidewalls of the gate hole 37 or the surface of the gate layer 36 , it successfully solves the leakage current or short problems caused by the residue of the CNT solution on the cathode layer 32 or the gate layer 36 after thermal process step.
- a CNT solution 40 is dispersed on the gate hole 37 by screen mask 42 using screen printing.
- some residue 43 of the above CNT solution is dropped on the surface of the sacrificial layer 38 .
- the residue 43 is removed using a polish step, as shown in FIG. 2 g .
- a thermal process step is executed, and the sacrificial layer 38 is removed to form a CNT emitter 44 , as shown in FIG. 2 h.
- carbon nanotubes are accurately deposited over a large area using screen printing, and an electron-emitting source of triode structure having good properties, and used as CNT-FED, is obtained.
- the substrate 30 is preferably made of glass.
- the cathode layer 32 or the gate layer 36 is preferably composed of electric conductors such as silver.
- the sacrificial layer 38 is preferably composed of photosensitive materials such as photoresists, peelable materials such as hydrophilic materials and lipophilic materials, soluble materials, sinterable materials, or etchable materials.
- the above thermal process preferably adopts a sintering step.
- FIGS. 3 a to 3 h are sectional views showing a process for manufacturing an electron-emitting source of triode structure using spin coating.
- a substrate 50 is provided.
- a cathode layer 52 is deposited on the substrate 50 .
- a dielectric layer 54 is deposited on the cathode layer 52 , and an opening 53 is positioned in the dielectric layer 54 to expose the cathode layer 52 , wherein the opening 53 has a surrounding region 55 .
- a gate layer 56 is deposited on the dielectric layer 54 except the surrounding region 55 .
- a gate hole 57 is formed after depositing the gate layer 56 .
- a carbon nanotube photoresist layer 58 is deposited on the gate layer 56 and covering the gate hole 57 using spin coating.
- the carbon nanotube photoresist layer 58 is preferably composed of positive photoresist or negative photoresist.
- the carbon nanotube photoresist layer 58 is composed of negative photoresist and the CNT solution.
- a CNT emitter pattern 62 is exposed by mask 60 using ultraviolet light and then patterned. In this case, the opening width of the mask 60 is smaller than the width of the gate hole 57 in order to prevent the patterned CNT emitter pattern 62 from contacting the gate layer 56 to prevent short problem.
- a thermal process step is executed to form a CNT emitter 64 , as shown in FIG. 3 h.
- carbon nanotubes are accurately deposited over a large area using spin coating, and an electron-emitting source of triode structure having good properties, and used as CNT-FED, is obtained.
- the substrate 50 is preferably made of glass.
- the cathode layer 52 or the gate layer 56 is preferably composed of electric conductors such as silver.
- the above thermal process preferably adopts a sintering step.
- FIGS. 4 a to 4 h are sectional views showing a process for manufacturing an electron-emitting source of triode structure using electrophoretic deposition (called EPD).
- EPD electrophoretic deposition
- a substrate 70 is provided.
- a cathode layer 72 is deposited on the substrate 70 .
- a dielectric layer 74 is deposited on the cathode layer 72 , and an opening 73 is positioned in the dielectric layer 74 to expose the cathode layer 72 , wherein the opening 73 has a surrounding region 75 .
- a gate layer 76 is deposited on the dielectric layer 74 except the surrounding region 75 .
- a gate hole 77 is formed after depositing the gate layer 76 .
- a sacrificial layer 78 is deposited on the surface of the gate layer 76 and the surrounding region 75 , wherein the gate hole 77 and the cathode layer 72 are exposed. Because the sacrificial layer 78 defines the position where CNT formed on the cathode layer 72 , and prevents CNT from being absorbed into the sidewalls of the gate hole 77 or the surface of the gate layer 76 during electrophoretic deposition step, it successfully solves the leakage current or short problems caused by the residue of the CNT left on the dielectric layer 74 or the gate layer 76 after thermal process step.
- an adhesive layer 80 is deposited in the gate hole 77 . Further, CNT is deposited on the adhesive layer 80 using an electrophoretic deposition step.
- the electrophoretic deposition preferably adopts cathode electrophoretic deposition, anode electrophoretic deposition, or suspensing electrophoretic deposition.
- FIG. 5 a is a sectional view showing cathode electrophoretic deposition.
- 90 and 94 show a metal electrode and an organic solvent system, respectively.
- a cathode layer 72 is connected with negative electrode, a positive CNT particle 92 is attracted to deposit on the adhesive layer 80 .
- FIG. 5 b is a sectional view showing anode electrophoretic deposition.
- the cathode layer 72 is connected with positive electrode, the negative CNT particle 92 is attracted to deposit on the adhesive layer 80 .
- FIG. 5 c is a sectional view showing suspensing electrophoretic deposition.
- Water solution system 96 preferably uses distilled water or deionized water as solvent, neither of which interact with sacrificial layer 78 .
- carbon nanotubes are accurately deposited over a large area using electrophoretic deposition, and an electron-emitting source of triode structure having good properties, and used as CNT-FED, is obtained.
- the substrate 70 is preferably made of glass.
- the cathode layer 72 or the gate layer 76 is preferably composed of electric conductors such as silver.
- the sacrificial layer 78 is preferably composed of photosensitive materials such as photoresists, peelable materials such as hydrophilic materials and lipophilic materials, soluble materials, sinterable materials, or etchable materials. The above thermal process preferably adopts a sintering step.
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- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
Claims (33)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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TW90122531A | 2001-09-12 | ||
TW90122531 | 2001-09-12 | ||
TW090122531A TW516061B (en) | 2001-09-12 | 2001-09-12 | Manufacturing method for triode-type electron emitting source |
Publications (2)
Publication Number | Publication Date |
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US20030049875A1 US20030049875A1 (en) | 2003-03-13 |
US6705910B2 true US6705910B2 (en) | 2004-03-16 |
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US10/067,315 Expired - Fee Related US6705910B2 (en) | 2001-09-12 | 2002-02-07 | Manufacturing method for an electron-emitting source of triode structure |
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US (1) | US6705910B2 (en) |
JP (1) | JP2003100202A (en) |
TW (1) | TW516061B (en) |
Cited By (24)
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US20040102044A1 (en) * | 2000-12-08 | 2004-05-27 | Dongsheng Mao | Low work function material |
US20040169281A1 (en) * | 2003-02-27 | 2004-09-02 | Applied Materials, Inc. | Ultra low k plasma CVD nanotube/spin-on dielectrics with improved properties for advanced nanoelectronic device fabrication |
US20050012163A1 (en) * | 2003-05-05 | 2005-01-20 | Industrial Technology Research Istitute | Apparatus and manufacturing process of carbon nanotube gate field effect transistor |
US20050074589A1 (en) * | 2003-09-18 | 2005-04-07 | Pan Alfred I-Tsung | Printable compositions having anisometric nanostructures for use in printed electronics |
US20050095360A1 (en) * | 2001-10-19 | 2005-05-05 | Nano-Proprietary, Inc. | Well formation |
US20050184646A1 (en) * | 2004-02-20 | 2005-08-25 | Ki-Hyun Noh | Electron emission device and method of manufacturing the same |
US20060049737A1 (en) * | 2004-09-03 | 2006-03-09 | Chun-Yen Hsiao | Method and structure of converging electron-emission source of field-emission display |
US20070031589A1 (en) * | 2004-07-06 | 2007-02-08 | Chun-Yen Hsiao | Electron Emission Source of Field Emission Display and Method for making the same |
US20070117401A1 (en) * | 2003-09-12 | 2007-05-24 | Nano-Proprietary, Inc. | Carbon nanotube deposition with a stencil |
KR100739149B1 (en) | 2005-11-22 | 2007-07-13 | 엘지전자 주식회사 | Surface conduction electron emitting display device and manufacturing method thereof |
US20080221240A1 (en) * | 2007-03-07 | 2008-09-11 | Massachusetts Institute Of Technology | Functionalization of nanoscale articles including nanotubes and fullerenes |
US20090162536A1 (en) * | 2007-12-25 | 2009-06-25 | Seiko Epson Corporation | Method for forming film pattern, method for forming contact hole, method for forming bump, and method for manufacturing light emitting device |
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US20100179054A1 (en) * | 2008-12-12 | 2010-07-15 | Massachusetts Institute Of Technology | High charge density structures, including carbon-based nanostructures and applications thereof |
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US7854861B2 (en) | 2001-10-19 | 2010-12-21 | Applied Nanotech Holdings, Inc. | Well formation |
US20110081724A1 (en) * | 2009-10-06 | 2011-04-07 | Massachusetts Institute Of Technology | Method and apparatus for determining radiation |
US20110089051A1 (en) * | 2008-03-04 | 2011-04-21 | Massachusetts Institute Of Technology | Devices and methods for determination of species including chemical warfare agents |
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US8456073B2 (en) | 2009-05-29 | 2013-06-04 | Massachusetts Institute Of Technology | Field emission devices including nanotubes or other nanoscale articles |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6239547B1 (en) * | 1997-09-30 | 2001-05-29 | Ise Electronics Corporation | Electron-emitting source and method of manufacturing the same |
US6290564B1 (en) * | 1999-09-30 | 2001-09-18 | Motorola, Inc. | Method for fabricating an electron-emissive film |
US6440761B1 (en) * | 1999-05-24 | 2002-08-27 | Samsung Sdi Co., Ltd. | Carbon nanotube field emission array and method for fabricating the same |
US6465132B1 (en) * | 1999-07-22 | 2002-10-15 | Agere Systems Guardian Corp. | Article comprising small diameter nanowires and method for making the same |
US6512235B1 (en) * | 2000-05-01 | 2003-01-28 | El-Mul Technologies Ltd. | Nanotube-based electron emission device and systems using the same |
US6616497B1 (en) * | 1999-08-12 | 2003-09-09 | Samsung Sdi Co., Ltd. | Method of manufacturing carbon nanotube field emitter by electrophoretic deposition |
-
2001
- 2001-09-12 TW TW090122531A patent/TW516061B/en not_active IP Right Cessation
-
2002
- 2002-02-07 US US10/067,315 patent/US6705910B2/en not_active Expired - Fee Related
- 2002-07-30 JP JP2002220850A patent/JP2003100202A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6239547B1 (en) * | 1997-09-30 | 2001-05-29 | Ise Electronics Corporation | Electron-emitting source and method of manufacturing the same |
US6440761B1 (en) * | 1999-05-24 | 2002-08-27 | Samsung Sdi Co., Ltd. | Carbon nanotube field emission array and method for fabricating the same |
US6465132B1 (en) * | 1999-07-22 | 2002-10-15 | Agere Systems Guardian Corp. | Article comprising small diameter nanowires and method for making the same |
US6616497B1 (en) * | 1999-08-12 | 2003-09-09 | Samsung Sdi Co., Ltd. | Method of manufacturing carbon nanotube field emitter by electrophoretic deposition |
US6290564B1 (en) * | 1999-09-30 | 2001-09-18 | Motorola, Inc. | Method for fabricating an electron-emissive film |
US6512235B1 (en) * | 2000-05-01 | 2003-01-28 | El-Mul Technologies Ltd. | Nanotube-based electron emission device and systems using the same |
Cited By (42)
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US7057203B2 (en) | 2000-12-08 | 2006-06-06 | Nano-Proprietary, Inc. | Low work function material |
US20040102044A1 (en) * | 2000-12-08 | 2004-05-27 | Dongsheng Mao | Low work function material |
US7854861B2 (en) | 2001-10-19 | 2010-12-21 | Applied Nanotech Holdings, Inc. | Well formation |
US20050095360A1 (en) * | 2001-10-19 | 2005-05-05 | Nano-Proprietary, Inc. | Well formation |
US7842522B2 (en) | 2001-10-19 | 2010-11-30 | Applied Nanotech Holdings, Inc. | Well formation |
US6984579B2 (en) * | 2003-02-27 | 2006-01-10 | Applied Materials, Inc. | Ultra low k plasma CVD nanotube/spin-on dielectrics with improved properties for advanced nanoelectronic device fabrication |
US20040169281A1 (en) * | 2003-02-27 | 2004-09-02 | Applied Materials, Inc. | Ultra low k plasma CVD nanotube/spin-on dielectrics with improved properties for advanced nanoelectronic device fabrication |
US6962839B2 (en) * | 2003-05-05 | 2005-11-08 | Industrial Technology Research Institute | Apparatus and manufacturing process of carbon nanotube gate field effect transistor |
US20050012163A1 (en) * | 2003-05-05 | 2005-01-20 | Industrial Technology Research Istitute | Apparatus and manufacturing process of carbon nanotube gate field effect transistor |
US20070117401A1 (en) * | 2003-09-12 | 2007-05-24 | Nano-Proprietary, Inc. | Carbon nanotube deposition with a stencil |
US7452735B2 (en) | 2003-09-12 | 2008-11-18 | Applied Nanotech Holdings, Inc. | Carbon nanotube deposition with a stencil |
US20050074589A1 (en) * | 2003-09-18 | 2005-04-07 | Pan Alfred I-Tsung | Printable compositions having anisometric nanostructures for use in printed electronics |
US7062848B2 (en) * | 2003-09-18 | 2006-06-20 | Hewlett-Packard Development Company, L.P. | Printable compositions having anisometric nanostructures for use in printed electronics |
US20050184646A1 (en) * | 2004-02-20 | 2005-08-25 | Ki-Hyun Noh | Electron emission device and method of manufacturing the same |
US20070031589A1 (en) * | 2004-07-06 | 2007-02-08 | Chun-Yen Hsiao | Electron Emission Source of Field Emission Display and Method for making the same |
US20060049737A1 (en) * | 2004-09-03 | 2006-03-09 | Chun-Yen Hsiao | Method and structure of converging electron-emission source of field-emission display |
US7220159B2 (en) * | 2004-09-03 | 2007-05-22 | Teco Nanotech Co., Ltd. | Method and structure of converging electron-emission source of field-emission display |
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US8212132B2 (en) | 2007-03-07 | 2012-07-03 | Massachusetts Institute Of Technology | Functionalization of nanoscale articles including nanotubes and fullerenes |
US20080221240A1 (en) * | 2007-03-07 | 2008-09-11 | Massachusetts Institute Of Technology | Functionalization of nanoscale articles including nanotubes and fullerenes |
US20090162536A1 (en) * | 2007-12-25 | 2009-06-25 | Seiko Epson Corporation | Method for forming film pattern, method for forming contact hole, method for forming bump, and method for manufacturing light emitting device |
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US8951473B2 (en) | 2008-03-04 | 2015-02-10 | Massachusetts Institute Of Technology | Devices and methods for determination of species including chemical warfare agents |
US20110089051A1 (en) * | 2008-03-04 | 2011-04-21 | Massachusetts Institute Of Technology | Devices and methods for determination of species including chemical warfare agents |
US20100179054A1 (en) * | 2008-12-12 | 2010-07-15 | Massachusetts Institute Of Technology | High charge density structures, including carbon-based nanostructures and applications thereof |
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KR100969172B1 (en) | 2009-06-22 | 2010-07-14 | 한국기계연구원 | Method for making fine patterns using mask template |
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US8426208B2 (en) | 2009-10-06 | 2013-04-23 | Massachusetts Institute Of Technology | Method and apparatus for determining radiation |
US20110081724A1 (en) * | 2009-10-06 | 2011-04-07 | Massachusetts Institute Of Technology | Method and apparatus for determining radiation |
US8241712B2 (en) | 2009-10-23 | 2012-08-14 | Korea Institute Of Machinery And Materials | Method for fabricating fine conductive patterns using surface modified mask template |
US20110094889A1 (en) * | 2009-10-23 | 2011-04-28 | Korea Institute Of Machinery And Materials | Method for fabricating highly conductive fine patterns using self-patterned conductors and plating |
US20110097514A1 (en) * | 2009-10-23 | 2011-04-28 | Korea Institute Of Machinery & Materials | Method for Fabricating Fine Conductive Patterns Using Surface Modified Mask Template |
KR100991105B1 (en) | 2009-10-23 | 2010-11-01 | 한국기계연구원 | Method for fabricating highly conductive fine patterns using self-patterned conductors and plating |
KR100991103B1 (en) * | 2009-10-23 | 2010-11-01 | 한국기계연구원 | Method for fabricating fine conductive patterns using surface modified mask template |
US20110171629A1 (en) * | 2009-11-04 | 2011-07-14 | Massachusetts Institute Of Technology | Nanostructured devices including analyte detectors, and related methods |
US8476510B2 (en) | 2010-11-03 | 2013-07-02 | Massachusetts Institute Of Technology | Compositions comprising and methods for forming functionalized carbon-based nanostructures |
US9770709B2 (en) | 2010-11-03 | 2017-09-26 | Massachusetts Institute Of Technology | Compositions comprising functionalized carbon-based nanostructures and related methods |
US11505467B2 (en) | 2017-11-06 | 2022-11-22 | Massachusetts Institute Of Technology | High functionalization density graphene |
US10905173B1 (en) | 2020-01-29 | 2021-02-02 | Simple Wishes Llc | Pumping/nursing garment |
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JP2003100202A (en) | 2003-04-04 |
TW516061B (en) | 2003-01-01 |
US20030049875A1 (en) | 2003-03-13 |
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