Connect public, paid and private patent data with Google Patents Public Datasets

Method for making a field emission display

Download PDF

Info

Publication number
US6342276B1
US6342276B1 US09607188 US60718800A US6342276B1 US 6342276 B1 US6342276 B1 US 6342276B1 US 09607188 US09607188 US 09607188 US 60718800 A US60718800 A US 60718800A US 6342276 B1 US6342276 B1 US 6342276B1
Authority
US
Grant status
Grant
Patent type
Prior art keywords
film
method
material
conductive
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US09607188
Inventor
Jong-Hun You
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00Apparatus and processes for manufacture of discharge tubes
    • H01J2209/02Manufacture of cathodes
    • H01J2209/022Cold cathodes
    • H01J2209/0223Field emission cathodes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the metallic pattern or other conductive pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha, beta particles

Abstract

A very fine pixel pattern can be formed by first screen printing a conductive paste and electron-emitting carbon paste material in sequence before removing a predetermined portion of the screen-printed layers simultaneously such that remaining portions become a fine pixel pattern. This method not only enables fine pixel pattern formation but also provides an electrode/emitter structure that increases electron emission. Furthermore all these improvements can be made with less manufacturing time and cost.

Description

FIELD OF THE INVENTION

The present invention relates to a field emission display and in particular to a method of forming a fine electrode pattern of field emitting material on a substrate of such a display.

BACKGROUND OF THE INVENTION

As shown FIG. 1, a conventional field emission display is comprised of a rear substrate 12, a plurality of parallel cathode electrode lines 16 formed on the rear substrate 12, thin films 20 of electron-emitting material formed on the cathode electrodes 16, a front substrate 14 spaced apart from the rear substrate 12 and a plurality of parallel anode electrode lines 18 formed on the undersurface of the front substrate 14. Further for a color display an RGB phosphor layer 22 is formed on top of the anode electrodes 18. When a predetermined voltage applied between a selected anode electrode 18 and a selected cathode 16 electrical current flows in parallel with the film 20. Then electrons are emitted from the surface of the emitter film 20 and accelerated toward the front substrate 14 and collide with the phosphor layer 22 to cause emission of visible light.

As electron emitting material diamond-like carbon, carbon fiber or carbon nanotube are commonly used. And a transparent ITO is generally used as material for cathode electrodes.

A pattern of emitter may be formed by either photolithography or printing. The first method involves forming a thin film of emitter and wet etching to form a desired pattern. According to the second method a carbon material is made in paste and coated on cathode electrodes by a thick film technique such as printing. However, a fine pattern of emitter may be possible with the first method but it requires costly and complex process. The latter is relatively less costly but it is difficult to produce a fine pattern of less than 100 micron because of distances between pixels in a mesh used in a thick film technique.

SUMMARY OF THE INVENTION

It is an objective of the present invention to provide a solution to a problem mentioned above. Namely, a method that enables forming of a fine emitter pattern and yet having improved emission efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross section of a conventional surface conductive FED.

FIG. 2 is a flow chart according to the present invention.

FIGS. 3A, 3B, 3C and 3D shows steps of forming electrodes/emitters corresponding to the flow chart in FIG. 2.

FIG. 4 is a flow chart according to the present invention.

FIGS. 5A, 5B and 5C shows steps of forming electrodes/emitters corresponding to the flow chart in FIG. 4.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

Referring to FIG. 2 showing a flow chart for forming a pattern of a field emission film according to the present invention. Each step of the chart will be explained with reference to FIGS. 3A, 3B, 3C and 3D. First an electrically conductive paste is made of material having a high enough viscosity for screen printing such as ITO or Al or Cr. In case the paste is of ITO it is preferred to include some solid components at a certain percentage. Specifically for a paste of 10,000˜100,000 cps viscosity the solid components are preferably between 10˜80 w % of the paste.

Thus prepared paste is layered on a surface of a substrate by a thick film techniques such as the screen printing or slurry method to form a conductive film 4 as shown in FIG. 3A. The screen printing involves transferring a paste onto a substrate through a screen mesh by a roller or squeeze. This method is commonly used for other printing needs. Next using a laser ablation, cathode electrode pattern 6 is formed. Namely a predetermined portion of the film is removed by laser irradiation leaving a desired cathode electrode pattern as shown in FIG. 3B. Now a paste made of graphite or carbon nanotube which have a high energy absorption rate in response to laser radiation is coated on the entire substrate over the cathode electrode pattern by screen printing and hardened as shown in FIG. 3C. Here the paste is preferably composed of one of the above electron-emitting material, glass powder and silver and binder at a ratio of 1:0.5˜0.8:0.5˜0.8:2-20. The laser ablation is once more irradiated in a predetermined pattern such that irradiated areas absorb high energy instantly and becomes gaseous leaving the emitter film over and slightly beyond the cathodes as shown in FIG. 3D. Among the electron emitting materials carbon nanotubes is preferred because they are exposured on the surface after laser irradiation as indicated in an enlarged circle in FIG. 3d and electron-emitting characteristic is greatly increased. As to the laser, an infrared (IR) laser is preferred because of high absorption into carbon family material used in the present invention. Specifically laser beam has a wavelength of 562-1024 nm may be used for patterning emitters including carbon nanotube.

FIG. 4 shows a flow chart for forming a pattern of field emitter according to a second embodiment of the present invention. The second embodiment does not perform laser ablation right after a film of conductive paste is formed on the substrate. Rather, only after an electron-emitting thin film has been formed over the conductive layer a laser beam is irradiated in a predetermined pattern and with an intensity such that the irradiated predetermined portions of both the conductive film and electron emitter film are removed simultaneously.

To be more specific a conductive film 4 made of ITO is first formed on the entire surface of a substrate 2 as shown in FIG. 5A. A film of emitter material 8 is further formed over the conductive film 4, as shown in FIG. 5B, by screen printing. Only then a laser is irradiated at a predetermined portions of the film so that a predetermined pattern of the emitter and conductive film remain. Here the energy density of the laser beam is controlled to instantly heat portions of the two layers at the same time and to turn them gaseous into a predetermined depth. As in the case of the first embodiment a laser beam of 562-1024 nm is preferably used. In response to the laser radiation the carbon nanotubes are exposured on the surface the patterned emitters as shown in FIG. 3D.

Claims (18)

What is claimed is:
1. A method for making an FED comprising steps of
forming a conductive film made of electrically conductive material on a substrate,
irradiating laser beam on said conductive film in a predetermined pattern such that irradiated portions are removed leaving a cathode electrode pattern,
forming a film of electron emitting material on said substrate covering said cathode electrodes,
removing a predetermined portion of said film of electron emitting by laser irradiation.
2. A method for making an FED according to claim 1, wherein said electron emitting material includes graphite.
3. A method for making an FED according to claim 1, wherein said electron emitting material includes carbon nanotube.
4. A method for making an FED according to claim 1, wherein said laser beam has a wavelength in the range of 562-1024 nm.
5. A method for making an FED according to claim 1, wherein said laser beam is generated by an infrared laser.
6. A method for making an FED according to claim 1, wherein said conductive material is indium tin oxide.
7. A method for making an FED according to claim 1, wherein said conductive material is metal.
8. A method for making an FED according to claim 7, wherein said metal includes aluminum or chrome.
9. A method for making an FED according to claim 1, wherein said conductive film and said film of electron emitting material are formed by slurry of screen printing.
10. A method for making an FED comprising steps of
forming a conductive film made of electrically conductive material on a substrate,
forming a film of carbon electron emitting material on said conductive film,
irradiating laser beam of predetermined intensity on said film of electron emitting material in a predetermined pattern such that a predetermined portion of said conductive film and said film of carbon material are removed at the same time.
11. A method for making an FED according to claim 10, wherein said electron emitting material includes graphite.
12. A method for making an FED according to claim 10, wherein said electron emitting material includes carbon nanotube.
13. A method for making an FED according to claim 10, wherein said laser beam has a wavelength in the range of 562-1024 nm.
14. A method for making an FED according to claim 10, wherein said laser beam is generated by an infrared laser.
15. A method for making an FED according to claim 10, wherein said conductive material is indium tin oxide.
16. A method for making an FED according to claim 10, wherein said conductive material is metal.
17. A method for making an FED according to claim 16, wherein said metal includes aluminum or chrome.
18. A method for making an FED according to claim 10, wherein said conductive film and said film of electron emitting material are formed by slurry of screen printing.
US09607188 1999-12-10 2000-06-29 Method for making a field emission display Expired - Fee Related US6342276B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR19990056716A KR20010055501A (en) 1999-12-10 1999-12-10 Method for forming cathode of field emission display
KR99-56716 1999-12-10

Publications (1)

Publication Number Publication Date
US6342276B1 true US6342276B1 (en) 2002-01-29

Family

ID=19625018

Family Applications (1)

Application Number Title Priority Date Filing Date
US09607188 Expired - Fee Related US6342276B1 (en) 1999-12-10 2000-06-29 Method for making a field emission display

Country Status (3)

Country Link
US (1) US6342276B1 (en)
JP (1) JP2001176380A (en)
KR (1) KR20010055501A (en)

Cited By (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004063091A1 (en) * 2003-01-09 2004-07-29 Sony Corporation Production method for tubular carbon molecule and tubular carbon molecule, production method for recording device and recording device, production method for field electron emission element and field electron emission element, and production method for display unit and display unit
WO2004106223A1 (en) * 2003-05-30 2004-12-09 Fuji Xerox Co., Ltd. Carbon nanotube device, process for producing the same and carbon nanotube transcriptional body
EP1506938A2 (en) * 2003-07-24 2005-02-16 Fuji Xerox Co., Ltd. Carbon nanotube structure, method and liquid solution for manufacturing the same and carbon nanotube transfer body
US20050053525A1 (en) * 2003-05-14 2005-03-10 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US20050058797A1 (en) * 2003-09-08 2005-03-17 Nantero, Inc. High purity nanotube fabrics and films
US20050101112A1 (en) * 2001-07-25 2005-05-12 Nantero, Inc. Methods of nanotubes films and articles
EP1634342A2 (en) * 2003-02-24 2006-03-15 MacDermid, Incorporated Method of fabricating electronic interconnect devices using direct imaging of dielectric material
US20060193093A1 (en) * 2004-11-02 2006-08-31 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
US20060204427A1 (en) * 2004-12-16 2006-09-14 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US20060260785A1 (en) * 2005-05-13 2006-11-23 Delta Electronics, Inc. Heat sink
US20060281256A1 (en) * 2005-06-08 2006-12-14 Carter Richard J Self-aligned cell integration scheme
US20070004191A1 (en) * 2005-06-30 2007-01-04 Lsi Logic Corporation Novel techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US20070018260A1 (en) * 2001-07-25 2007-01-25 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US20070190886A1 (en) * 2004-09-27 2007-08-16 Asahi Glass Co., Ltd. Method for forming electrodes and/or black stripes for plasma display substrate
US20070235826A1 (en) * 2001-07-25 2007-10-11 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US20070248758A1 (en) * 2002-04-23 2007-10-25 Ward Jonathan W Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, elements and articles
US20080012047A1 (en) * 2005-05-09 2008-01-17 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US20080036356A1 (en) * 2004-09-16 2008-02-14 Nantero, Inc. Light emitters using nanotubes and methods of making same
US20080079027A1 (en) * 2004-06-09 2008-04-03 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US20080142850A1 (en) * 2005-05-09 2008-06-19 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US20080157257A1 (en) * 2005-05-09 2008-07-03 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080157127A1 (en) * 2005-05-09 2008-07-03 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080157126A1 (en) * 2005-05-09 2008-07-03 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080170429A1 (en) * 2005-05-09 2008-07-17 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080179571A1 (en) * 2003-09-08 2008-07-31 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US20080212361A1 (en) * 2005-05-09 2008-09-04 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080231413A1 (en) * 2004-09-21 2008-09-25 Nantero, Inc. Resistive elements using carbon nanotubes
US20080238882A1 (en) * 2007-02-21 2008-10-02 Ramesh Sivarajan Symmetric touch screen system with carbon nanotube-based transparent conductive electrode pairs
US20080280038A1 (en) * 2003-01-13 2008-11-13 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US20080299307A1 (en) * 2001-07-25 2008-12-04 Ward Jonathan W Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US20090051032A1 (en) * 2003-09-08 2009-02-26 Segal Brent M Patterned nanoscopic articles and methods of making the same
US20090099016A1 (en) * 2005-12-19 2009-04-16 Advanced Technology Materials, Inc. Production of carbon nanotubes
US20090111282A1 (en) * 2003-01-13 2009-04-30 Ward Jonathan W Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US20090115305A1 (en) * 2007-05-22 2009-05-07 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US20090140167A1 (en) * 2005-09-06 2009-06-04 Natero, Inc. Nanotube fabric-based sensor systems and methods of making same
US20090154218A1 (en) * 2005-05-09 2009-06-18 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US20090173964A1 (en) * 2001-07-25 2009-07-09 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US20090184389A1 (en) * 2005-05-09 2009-07-23 Bertin Claude L Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
US20090194839A1 (en) * 2005-11-15 2009-08-06 Bertin Claude L Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20090211460A1 (en) * 2007-11-20 2009-08-27 Kwok Kuen So Bowl and basket assembly and salad spinner incorporating such an assembly
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US20100001267A1 (en) * 2008-06-20 2010-01-07 Nantero, Inc. Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US20100012927A1 (en) * 2001-07-25 2010-01-21 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US20100147657A1 (en) * 2004-11-02 2010-06-17 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US7745810B2 (en) 2001-07-25 2010-06-29 Nantero, Inc. Nanotube films and articles
US20100267205A1 (en) * 2005-09-06 2010-10-21 Lockheed Martin Corporation Carbon nanotubes for the selective transfer of heat from electronics
US20100327247A1 (en) * 2005-09-06 2010-12-30 Nantero, Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US20110027497A1 (en) * 2009-07-31 2011-02-03 Nantero, Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US20110034008A1 (en) * 2009-08-07 2011-02-10 Nantero, Inc. Method for forming a textured surface on a semiconductor substrate using a nanofabric layer
US7915637B2 (en) 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US20110096587A1 (en) * 2009-10-23 2011-04-28 Nantero, Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US20110156009A1 (en) * 2009-12-31 2011-06-30 Manning H Montgomery Compact electrical switching devices with nanotube elements, and methods of making same
US20110163290A1 (en) * 2009-10-23 2011-07-07 Nantero, Inc. Methods for passivating a carbonic nanolayer
US20110203632A1 (en) * 2010-02-22 2011-08-25 Rahul Sen Photovoltaic devices using semiconducting nanotube layers
US8110883B2 (en) 2007-03-12 2012-02-07 Nantero Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
US8574673B2 (en) 2009-07-31 2013-11-05 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
EP2339310A3 (en) * 2009-12-22 2014-07-02 AMG Intellifast GmbH Connecting element with integrated ultrasound sensor and methed of fabrication thereof
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US8937575B2 (en) 2009-07-31 2015-01-20 Nantero Inc. Microstrip antenna elements and arrays comprising a shaped nanotube fabric layer and integrated two terminal nanotube select devices
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
JP2015181207A (en) * 2012-07-20 2015-10-15 東洋紡株式会社 Conductive paste for laser etching use, conductive thin film, and conductive laminate
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
US9422651B2 (en) 2003-01-13 2016-08-23 Nantero Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
US9574290B2 (en) 2003-01-13 2017-02-21 Nantero Inc. Methods for arranging nanotube elements within nanotube fabrics and films
US9617151B2 (en) 2010-02-12 2017-04-11 Nantero Inc. Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0125350D0 (en) * 2001-10-22 2001-12-12 Sigtronics Ltd PCB formation by laser cleaning of conductive ink
JP2003258256A (en) * 2002-02-27 2003-09-12 Konica Corp Organic tft device and its manufacturing method
KR20050079339A (en) * 2004-02-05 2005-08-10 삼성에스디아이 주식회사 Manufacturing method of field emitter
KR100699800B1 (en) * 2004-12-01 2007-03-27 나노퍼시픽(주) Field emission display and method of fabricating the same
KR100787630B1 (en) * 2006-05-24 2007-12-21 경희대학교 산학협력단 Display device and method for manufacturing the same

Cited By (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058089B2 (en) 2001-07-25 2011-11-15 Nantero Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7619291B2 (en) 2001-07-25 2009-11-17 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7563711B1 (en) 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US20100012927A1 (en) * 2001-07-25 2010-01-21 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US20090045473A1 (en) * 2001-07-25 2009-02-19 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US20080299307A1 (en) * 2001-07-25 2008-12-04 Ward Jonathan W Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US20050101112A1 (en) * 2001-07-25 2005-05-12 Nantero, Inc. Methods of nanotubes films and articles
US7719067B2 (en) 2001-07-25 2010-05-18 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7745810B2 (en) 2001-07-25 2010-06-29 Nantero, Inc. Nanotube films and articles
US8400053B2 (en) 2001-07-25 2013-03-19 Nantero Inc. Carbon nanotube films, layers, fabrics, ribbons, elements and articles
US20070141746A1 (en) * 2001-07-25 2007-06-21 Nantero, Inc. Methods of nanotube films and articles
US20070235826A1 (en) * 2001-07-25 2007-10-11 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US20070018260A1 (en) * 2001-07-25 2007-01-25 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US20090173964A1 (en) * 2001-07-25 2009-07-09 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US20070248758A1 (en) * 2002-04-23 2007-10-25 Ward Jonathan W Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, elements and articles
US7828620B2 (en) 2003-01-09 2010-11-09 Sony Corporation Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit
US20090121605A1 (en) * 2003-01-09 2009-05-14 Sony Corporation Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing recording apparatus and recording apparatus, method of manufacutring field electron emission device and field electron emission device
WO2004063091A1 (en) * 2003-01-09 2004-07-29 Sony Corporation Production method for tubular carbon molecule and tubular carbon molecule, production method for recording device and recording device, production method for field electron emission element and field electron emission element, and production method for display unit and display unit
US20060108906A1 (en) * 2003-01-09 2006-05-25 Gosain Dharam P Production method for tubular carbon molecule and tubular carbon molecule, production method for recording device and recording device, production method for field electron emission element and field electron emission element, and production method for display unit and display unit
US7892063B2 (en) 2003-01-09 2011-02-22 Sony Corporation Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing recording apparatus and recording apparatus, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit
US20080280038A1 (en) * 2003-01-13 2008-11-13 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US20090111282A1 (en) * 2003-01-13 2009-04-30 Ward Jonathan W Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US9574290B2 (en) 2003-01-13 2017-02-21 Nantero Inc. Methods for arranging nanotube elements within nanotube fabrics and films
US9422651B2 (en) 2003-01-13 2016-08-23 Nantero Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
EP1634342A2 (en) * 2003-02-24 2006-03-15 MacDermid, Incorporated Method of fabricating electronic interconnect devices using direct imaging of dielectric material
EP1634342A4 (en) * 2003-02-24 2008-03-05 Macdermid Inc Method of fabricating electronic interconnect devices using direct imaging of dielectric material
CN100487940C (en) 2003-02-24 2009-05-13 麦克德米德有限公司 Method of fabricating electronic interconnect devices using direct imaging of dielectric composite material
US8357559B2 (en) 2003-05-14 2013-01-22 Nantero Inc. Method of making sensor platform using a non-horizontally oriented nanotube element
US7385266B2 (en) 2003-05-14 2008-06-10 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US20050053525A1 (en) * 2003-05-14 2005-03-10 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US8310015B2 (en) 2003-05-14 2012-11-13 Nantero Inc. Sensor platform using a horizontally oriented nanotube element
US7538400B2 (en) 2003-05-14 2009-05-26 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US20060125033A1 (en) * 2003-05-14 2006-06-15 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US7780918B2 (en) 2003-05-14 2010-08-24 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US20060237805A1 (en) * 2003-05-14 2006-10-26 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US20050065741A1 (en) * 2003-05-14 2005-03-24 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US20100022045A1 (en) * 2003-05-14 2010-01-28 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US7786540B2 (en) 2003-05-14 2010-08-31 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
CN100554138C (en) 2003-05-30 2009-10-28 富士施乐株式会社 Carbon nanotube device, process for producing the same and carbon nanotube transcriptional body
US7452828B2 (en) 2003-05-30 2008-11-18 Fuji Xerox Co., Ltd. Carbon nanotube device, method of manufacturing the same, and carbon nanotube transfer body
US20060038299A1 (en) * 2003-05-30 2006-02-23 Fuji Xerox Co., Ltd Carbon nanotube device, process for producing the same and carbon nanotube transcriptional body
WO2004106223A1 (en) * 2003-05-30 2004-12-09 Fuji Xerox Co., Ltd. Carbon nanotube device, process for producing the same and carbon nanotube transcriptional body
EP1506938A2 (en) * 2003-07-24 2005-02-16 Fuji Xerox Co., Ltd. Carbon nanotube structure, method and liquid solution for manufacturing the same and carbon nanotube transfer body
US20050127030A1 (en) * 2003-07-24 2005-06-16 Fuji Xerox Co., Ltd. Carbon nanotube structure, method of manufacturing the same, carbon nanotube transfer body, and liquid solution
EP1506938A3 (en) * 2003-07-24 2005-06-15 Fuji Xerox Co., Ltd. Carbon nanotube structure, method and liquid solution for manufacturing the same and carbon nanotube transfer body
US7858185B2 (en) 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
US20090051032A1 (en) * 2003-09-08 2009-02-26 Segal Brent M Patterned nanoscopic articles and methods of making the same
US20050058797A1 (en) * 2003-09-08 2005-03-17 Nantero, Inc. High purity nanotube fabrics and films
US7948082B2 (en) 2003-09-08 2011-05-24 Nantero, Inc. Method of fabricating a patterned nanoscopic article
US8187502B2 (en) 2003-09-08 2012-05-29 Nantero Inc. Spin-coatable liquid for formation of high purity nanotube films
US20080224126A1 (en) * 2003-09-08 2008-09-18 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US8147722B2 (en) 2003-09-08 2012-04-03 Nantero Inc. Spin-coatable liquid for formation of high purity nanotube films
US20080179571A1 (en) * 2003-09-08 2008-07-31 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7709880B2 (en) 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US20080079027A1 (en) * 2004-06-09 2008-04-03 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US20080036356A1 (en) * 2004-09-16 2008-02-14 Nantero, Inc. Light emitters using nanotubes and methods of making same
US8471238B2 (en) 2004-09-16 2013-06-25 Nantero Inc. Light emitters using nanotubes and methods of making same
US7859385B2 (en) 2004-09-21 2010-12-28 Nantero, Inc. Resistive elements using carbon nanotubes
US20080231413A1 (en) * 2004-09-21 2008-09-25 Nantero, Inc. Resistive elements using carbon nanotubes
US20070190886A1 (en) * 2004-09-27 2007-08-16 Asahi Glass Co., Ltd. Method for forming electrodes and/or black stripes for plasma display substrate
US7772778B2 (en) 2004-09-27 2010-08-10 Asahi Glass Company, Limited Method for forming electrodes and/or black stripes for plasma display substrate
US20110083319A1 (en) * 2004-11-02 2011-04-14 Nantero, Inc. Methods of making nanotube switches
US7567414B2 (en) 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
US20060193093A1 (en) * 2004-11-02 2006-08-31 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
US8631562B2 (en) 2004-11-02 2014-01-21 Nantero Inc. Methods of making nanotube switches
US20100147657A1 (en) * 2004-11-02 2010-06-17 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US20060204427A1 (en) * 2004-12-16 2006-09-14 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US7666382B2 (en) 2004-12-16 2010-02-23 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US20100051880A1 (en) * 2004-12-16 2010-03-04 Ghenciu Eliodor G Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US8771628B2 (en) 2004-12-16 2014-07-08 Nantero Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US20090154218A1 (en) * 2005-05-09 2009-06-18 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US9406349B2 (en) 2005-05-09 2016-08-02 Nantero Inc. Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks
US8013363B2 (en) 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US20080170429A1 (en) * 2005-05-09 2008-07-17 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7782650B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080157126A1 (en) * 2005-05-09 2008-07-03 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080157127A1 (en) * 2005-05-09 2008-07-03 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080157257A1 (en) * 2005-05-09 2008-07-03 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20100072042A1 (en) * 2005-05-09 2010-03-25 Bertin Claude L Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US20080142850A1 (en) * 2005-05-09 2008-06-19 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9767902B2 (en) 2005-05-09 2017-09-19 Nantero, Inc. Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same
US8217490B2 (en) 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20080012047A1 (en) * 2005-05-09 2008-01-17 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US8809917B2 (en) 2005-05-09 2014-08-19 Nantero Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US8513768B2 (en) 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8580586B2 (en) 2005-05-09 2013-11-12 Nantero Inc. Memory arrays using nanotube articles with reprogrammable resistance
US20090184389A1 (en) * 2005-05-09 2009-07-23 Bertin Claude L Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US20080212361A1 (en) * 2005-05-09 2008-09-04 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US20060260785A1 (en) * 2005-05-13 2006-11-23 Delta Electronics, Inc. Heat sink
US7915122B2 (en) 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
US20060281256A1 (en) * 2005-06-08 2006-12-14 Carter Richard J Self-aligned cell integration scheme
US20070004191A1 (en) * 2005-06-30 2007-01-04 Lsi Logic Corporation Novel techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US7538040B2 (en) 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US20090140167A1 (en) * 2005-09-06 2009-06-04 Natero, Inc. Nanotube fabric-based sensor systems and methods of making same
US20100267205A1 (en) * 2005-09-06 2010-10-21 Lockheed Martin Corporation Carbon nanotubes for the selective transfer of heat from electronics
US8366999B2 (en) 2005-09-06 2013-02-05 Nantero Inc. Nanotube fabric-based sensor systems and methods of making same
US20100327247A1 (en) * 2005-09-06 2010-12-30 Nantero, Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US8630091B2 (en) 2005-09-06 2014-01-14 Nantero Inc. Carbon nanotubes for the selective transfer of heat from electronics
US7927992B2 (en) 2005-09-06 2011-04-19 Nantero, Inc. Carbon nanotubes for the selective transfer of heat from electronics
US8525143B2 (en) 2005-09-06 2013-09-03 Nantero Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US8183665B2 (en) 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20090194839A1 (en) * 2005-11-15 2009-08-06 Bertin Claude L Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US20090099016A1 (en) * 2005-12-19 2009-04-16 Advanced Technology Materials, Inc. Production of carbon nanotubes
US8562937B2 (en) 2005-12-19 2013-10-22 Nantero Inc. Production of carbon nanotubes
US20080238882A1 (en) * 2007-02-21 2008-10-02 Ramesh Sivarajan Symmetric touch screen system with carbon nanotube-based transparent conductive electrode pairs
US8110883B2 (en) 2007-03-12 2012-02-07 Nantero Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
US8115187B2 (en) 2007-05-22 2012-02-14 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US20090115305A1 (en) * 2007-05-22 2009-05-07 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US20090211460A1 (en) * 2007-11-20 2009-08-27 Kwok Kuen So Bowl and basket assembly and salad spinner incorporating such an assembly
US8587989B2 (en) 2008-06-20 2013-11-19 Nantero Inc. NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US20100001267A1 (en) * 2008-06-20 2010-01-07 Nantero, Inc. Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US8969142B2 (en) 2008-11-19 2015-03-03 Nantero Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the same
US9337423B2 (en) 2008-11-19 2016-05-10 Nantero Inc. Two-terminal switching device using a composite material of nanoscopic particles and carbon nanotubes
US7915637B2 (en) 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US20110183489A1 (en) * 2008-11-19 2011-07-28 Ghenciu Eliodor G Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US9755170B2 (en) 2008-11-19 2017-09-05 Nantero, Inc. Resistive materials comprising mixed nanoscopic particles and carbon nanotubes
US8586424B2 (en) 2008-11-19 2013-11-19 Nantero Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US20110027497A1 (en) * 2009-07-31 2011-02-03 Nantero, Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US8128993B2 (en) 2009-07-31 2012-03-06 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US8574673B2 (en) 2009-07-31 2013-11-05 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US8937575B2 (en) 2009-07-31 2015-01-20 Nantero Inc. Microstrip antenna elements and arrays comprising a shaped nanotube fabric layer and integrated two terminal nanotube select devices
US20110034008A1 (en) * 2009-08-07 2011-02-10 Nantero, Inc. Method for forming a textured surface on a semiconductor substrate using a nanofabric layer
US20110096587A1 (en) * 2009-10-23 2011-04-28 Nantero, Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US20110163290A1 (en) * 2009-10-23 2011-07-07 Nantero, Inc. Methods for passivating a carbonic nanolayer
US8551806B2 (en) 2009-10-23 2013-10-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US9281185B2 (en) 2009-10-23 2016-03-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US8351239B2 (en) 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US9502675B2 (en) 2009-10-23 2016-11-22 Nantero Inc. Methods for passivating a carbonic nanolayer
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
EP2339310A3 (en) * 2009-12-22 2014-07-02 AMG Intellifast GmbH Connecting element with integrated ultrasound sensor and methed of fabrication thereof
US8222704B2 (en) 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US20110156009A1 (en) * 2009-12-31 2011-06-30 Manning H Montgomery Compact electrical switching devices with nanotube elements, and methods of making same
US9617151B2 (en) 2010-02-12 2017-04-11 Nantero Inc. Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films
US20110203632A1 (en) * 2010-02-22 2011-08-25 Rahul Sen Photovoltaic devices using semiconducting nanotube layers
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
JP2015181207A (en) * 2012-07-20 2015-10-15 東洋紡株式会社 Conductive paste for laser etching use, conductive thin film, and conductive laminate
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same
US9715927B2 (en) 2015-01-22 2017-07-25 Nantero, Inc. 1-R resistive change element arrays using resistive reference elements
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays

Also Published As

Publication number Publication date Type
JP2001176380A (en) 2001-06-29 application
KR20010055501A (en) 2001-07-04 application

Similar Documents

Publication Publication Date Title
US5445550A (en) Lateral field emitter device and method of manufacturing same
US20050127351A1 (en) Low voltage electron source with self aligned gate apertures, fabrication method thereof, and luminous display using the electron source
US6445122B1 (en) Field emission display panel having cathode and anode on the same panel substrate
US5949184A (en) Light-emitting device and method of manufacturing the same
US6509677B2 (en) Focusing electrode and method for field emission displays
US6811457B2 (en) Cathode plate of a carbon nano tube field emission display and its fabrication method
US6359383B1 (en) Field emission display device equipped with nanotube emitters and method for fabricating
US20050082964A1 (en) Cold cathode electric field electron emission display device
US6489718B1 (en) Spacer suitable for use in flat panel display
US6448709B1 (en) Field emission display panel having diode structure and method for fabricating
US6541906B2 (en) Field emission display panel equipped with a dual-layer cathode and an anode on the same substrate and method for fabrication
US20040080260A1 (en) Field emission device
US6440761B1 (en) Carbon nanotube field emission array and method for fabricating the same
US20050242707A1 (en) Electron emission device
US20020175618A1 (en) Field emission display panels incorporating cathodes having narrow nanotube emitters formed on dielectric layers
US20050151461A1 (en) Field emission devices
US6803708B2 (en) Barrier metal layer for a carbon nanotube flat panel display
US20040195950A1 (en) Field emission display including electron emission source formed in multi-layer structure
US6486599B2 (en) Field emission display panel equipped with two cathodes and an anode
US20080122336A1 (en) Electron-Emitting Device, Electron Source Using the Same, Image Display Apparatus, and Information Displaying and Reproducing Apparatus
US6624566B2 (en) Vacuum fluorescent display
US5670296A (en) Method of manufacturing a high efficiency field emission display
US6596141B2 (en) Field emission display having matrix material
US20020081931A1 (en) Electron-emitting device, electron source and method for manufacturing image-forming apparatus
US6769945B2 (en) Method of growing isomeric carbon emitters onto triode structure of field emission display

Legal Events

Date Code Title Description
AS Assignment

Owner name: SAMSUNG SDI CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:YOU, JONG-HUN;REEL/FRAME:010941/0562

Effective date: 20000329

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
FP Expired due to failure to pay maintenance fee

Effective date: 20060129