US5506544A - Bias circuit for depletion mode field effect transistors - Google Patents
Bias circuit for depletion mode field effect transistors Download PDFInfo
- Publication number
- US5506544A US5506544A US08/419,500 US41950095A US5506544A US 5506544 A US5506544 A US 5506544A US 41950095 A US41950095 A US 41950095A US 5506544 A US5506544 A US 5506544A
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- power supply
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- 230000005669 field effect Effects 0.000 title claims abstract description 10
- 239000004020 conductor Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
Definitions
- the present invention relates in general to depletion mode transistor circuits and, more particularly, to a bias circuit for minimizing quiescent current variation in a depletion mode field effect transistor.
- Radio frequency (RF) amplifiers are commonly used in applications such as cellular telephones to amplify high frequency signals in the 800-900 MHz range.
- the amplified RF signal is transmitted over airways to a receiving unit.
- a typical RF amplifier includes a metal semiconductor field effect transistor (MESFET) that receives the RF input signal at its gate.
- the drain of the MESFET is coupled through an RF choke to a positive power supply conductor for providing the amplifier RF output signal.
- MESFET metal semiconductor field effect transistor
- the gate of the MESFET must be biased for proper operation.
- the bias point along with the load line and input RF voltage waveform determine the drain current through the power transistor.
- Minimizing power consumption is especially important in battery supplied applications. It is also important to control the bias point over temperature and process variation to maintain constant drain current through the MESFET.
- a resistor divider network has been used to bias the power MESFET.
- the resistors are typically laser trimmed to adjust the bias on each amplifier to compensate for process variation.
- the resistor trimming is an expensive step in manufacturing and generally fails to compensate for temperature variation in later operation.
- Another known bias circuit includes complex digital and analog circuitry that samples the drain current of the power transistor and makes dynamic adjustments to the bias voltage. The sampling circuit tends to be over complex and expensive to manufacture.
- FIG. 1 is a schematic diagram illustrating a bias circuit for a MESFET amplifier
- FIGS. 2 and 3 are plots of drain current versus gate-source voltage
- FIG. 4 is a schematic diagram illustrating an alternate bias circuit for the MESFET amplifier.
- an RF amplifier 10 is shown suitable for manufacturing as an integrated circuit (IC) using conventional monolithic IC processes.
- An RF IN signal operating at say 900 MHz is AC-coupled through capacitor 11 to the gate of transistor 12.
- Transistor 12 is a gallium arsenide depletion mode MESFET operating as a power device that conducts 200.0 milliamps quiescent current nominally.
- the source of transistor 12 is coupled to power supply conductor 14 operating at ground potential.
- the RF choke is selected at 15.0 nanohenries.
- the RF OUT signal is taken at the drain of transistor 12.
- a bias circuit 20 is coupled to the gate of transistor 12 and sets its bias operating point.
- Bias circuit 20 includes transistor 22 and resistor 24 serially coupled between power supply conductor 26 and the source of transistor 28.
- Transistor 22 and resistor 24 may be reverse in order with respect to the arrangement shown in FIG. 1.
- Transistor 22 is configured as a diode with its drain and source (anode) coupled together to power supply conductor 26 and its gate (cathode) coupled to one end of resistor 24 for providing a voltage offset.
- the gate of transistor 28 receives power supply V SS , while its drain is coupled through resistor 30 to power supply conductor 14.
- Resistor 24 is selected at 2120.0 ohms, and resistor 30 is selected at 3120.0 ohm.
- Transistors 22 and 28 are also MESFET devices.
- Resistor 32 is selected at 1000.0 ohm and coupled between the source of transistor 28 and the gate of transistor 12 to isolate the RF signal from bias circuit 20.
- Bias circuit 20 generates a bias voltage at the gate of transistor 12 that maintains a constant drain current I DS over temperature and process variation.
- Bias circuit 20 is applicable to any depletion mode field effect transistor circuit with a negative threshold voltage (V TH ⁇ 0), including MESFETs, HEMTs, HFETs, MODFETs, JFETs, etc.
- Other examples of depletion mode circuits within the scope of the present invention include mixers, oscillators, and multipliers.
- the gate of transistor 28 receives the negative supply voltage V SS causing it to operate in saturation (drain-source voltage>1.0 volts) and conduct current I SS through resistors 24 and 30.
- the gate width of transistor 28 is scaled to 1/50 the gate width of transistor 12.
- Transistor 22 operates as a diode to generate a 0.7 voltage offset between V SS and the source of transistor 28.
- the current I SS develops a bias voltage across resistor 30 (I SS .R30) which is applied through resistor 32 to the gate of transistor 12.
- the current I SS is proportional to temperature and process variation.
- the current through resistor 32 is very small so the voltage drop across resistor 32 is negligible.
- the bias voltage establishes the quiescent operating point for transistor 12.
- V GS gate-source voltage
- V TH threshold voltage
- the threshold is defined at the point where the drain current I DS equals zero. Any value greater than V TH causes some current to flow through the transistor.
- a load line 40 as determined by the inverse of resistor 24 intersects characteristic curves 34-38 at points A, B, and C, respectively. Notice that load line 40 is shifted from the origin by the offset voltage (0.7 volts) of transistor 22.
- V TH -1.5 (maximum)
- the bias voltage is 0.28 ma .
- the same bias voltages V BIAS determined by I SS .R 30 are read from the bottom of the graph to characteristic curves 42, 44 and 46.
- the characteristic curves 42-46 represent typical temperature effects and process variation such that the bias voltages all correspond to substantially the same drain current I DS .
- a feature of the present invention is to offset the V GS of transistor 28 with the voltage across diode configured transistor 22.
- the voltage offset shifts load line 40 away from the origin as shown in FIG. 2 and provides the proper dependence of I SS with temperature and process variation without drawing excessive drain current through transistor 28.
- the current I SS develops the bias voltage that maintains a constant quiescent current I DS through transistor 12.
- a bias circuit 50 is coupled to the gate of transistor 12 and sets its bias operating point.
- Bias circuit 50 includes resistor 52 coupled between power supply conductor 26 and the source of transistor 54.
- the gate of transistor 54 receives the negative power supply V SS , while its drain is coupled through resistor 56 to power supply conductor 14.
- Transistor 58 includes a gate and source coupled together the source of transistor 54.
- the drain of transistor 58 coupled to the drain of transistor 54.
- Resistors 52 and 56 are each selected at 400.0 ohms.
- Transistors 54 and 58 are also MESFET devices.
- Resistor 60 is selected at 3 K ohm and coupled between the drain of transistor 54 and the gate of transistor 12 to isolate the RF signal from bias circuit 50.
- Bias circuit 50 generates a bias voltage at the gate of transistor 12 that maintains a constant drain current I DS over temperature and process variation.
- the gate of transistor 54 receives the negative supply voltage V SS causing it to operate in saturation and conduct current I SS through resistors 52 and 56.
- the gate width of transistor 54 is scaled to 1/50 the gate width of transistor 12.
- Resistor 52 sets the bias point of transistor 54 because the voltage drop across resistor 52 (I SS .R 52 ) is equal to the V GS of transistor 54. Since resistors 52 and 56 conduct the same current, the voltage drop across resistor 56 is proportional to V GS of transistor 54. Neglecting the voltage drop across resistor 60, the V GS of transistor 54 is substantially equal to V GS of transistor 12.
- Transistor 58 operates in saturation (drain-source voltage>0.7 volts) with I DSS58 varying with its threshold voltage. Transistor 58 provides an incremental current flow through resistor 52 to compensate the bias voltage of transistor 12 for variation in threshold voltages. As the threshold voltages of transistor 54 and 58 becomes more negative, the saturation current through transistor 58 increases and causes more voltage drop across resistor 52. The same delta voltage drop occurs across resistor 56 since each conducts the same current. The bias voltage to transistor 12 thus reduces to compensate for the more negative threshold voltage of transistor 54. Likewise, as the threshold voltage of transistor 54 becomes more positive, the saturation current through transistor 58 decreases and causes less voltage drop across resistor 52. The same delta voltage drop occurs across resistor 56 since each conducts the same current. The bias voltage to transistor 12 thus increases to compensate for the more positive threshold voltage of transistor 54.
- the present invention generates a bias voltage to the gate of a MESFET transistor.
- the bias circuit is applicable to other depletion mode field effect transistor circuits having a negative threshold voltage.
- the bias voltage is offset from a power supply potential to maintain substantially constant drain current over a variety of threshold voltages, processes, and temperatures.
- a transistor in the bias circuit provides an incremental current flow to compensate the bias voltage of the depletion mode FET for variation in threshold voltages.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/419,500 US5506544A (en) | 1995-04-10 | 1995-04-10 | Bias circuit for depletion mode field effect transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/419,500 US5506544A (en) | 1995-04-10 | 1995-04-10 | Bias circuit for depletion mode field effect transistors |
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US5506544A true US5506544A (en) | 1996-04-09 |
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US08/419,500 Expired - Lifetime US5506544A (en) | 1995-04-10 | 1995-04-10 | Bias circuit for depletion mode field effect transistors |
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Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5675290A (en) * | 1995-08-09 | 1997-10-07 | Mitsubishi Denki Kabushiki Kaisha | Microwave amplifier circuit |
US5724004A (en) * | 1996-06-13 | 1998-03-03 | Motorola, Inc. | Voltage bias and temperature compensation circuit for radio frequency power amplifier |
US5757236A (en) * | 1996-07-01 | 1998-05-26 | Motorola, Inc. | Amplifier bias circuit and method |
GB2322042A (en) * | 1997-02-05 | 1998-08-12 | Ericsson Telefon Ab L M | Radio transceiver circuitry having transistors with normal and reduced threshold voltages |
US5859567A (en) * | 1996-09-24 | 1999-01-12 | Motorola, Inc. | Power amplifier circuit with temperature compensating level shifter |
US5861779A (en) * | 1994-05-20 | 1999-01-19 | Knowles Electronics, Inc. | Impedance circuit for a miniature hearing aid |
WO1999033168A1 (en) * | 1997-12-22 | 1999-07-01 | Telefonaktiebolaget Lm Ericsson | Low voltage transistor biasing |
US5994955A (en) * | 1998-06-26 | 1999-11-30 | Maxim Integrated Products, Inc. | Driver amplifiers with low noise standby mode characteristics |
US6052032A (en) * | 1998-03-13 | 2000-04-18 | Nokia Mobile Phones, Ltd. | Radio frequency amplifiers |
US6100753A (en) * | 1997-12-06 | 2000-08-08 | Electronics And Telecommunications Research Institute | Bias stabilization circuit |
US6166604A (en) * | 1998-06-18 | 2000-12-26 | Nec Corporation | Semiconductor amplifier with compensated passing gain characteristic and passing phase characteristic |
GB2354652A (en) * | 1999-09-16 | 2001-03-28 | Samsung Electronics Co Ltd | An arrangement for biassing an rf transistor to produce a temperature invariant quiescent current |
US6288613B1 (en) * | 2000-06-15 | 2001-09-11 | Nortel Networks Limited | Bias circuits for depletion mode field effect transistors |
US6304130B1 (en) | 1999-12-23 | 2001-10-16 | Nortel Networks Limited | Bias circuit for depletion mode field-effect transistors |
US6400219B1 (en) * | 2000-08-16 | 2002-06-04 | Texas Instruments Incorporated | High-speed offset comparator |
EP1231708A2 (en) * | 2001-02-08 | 2002-08-14 | Pace Micro Technology PLC | Self compensating amplifier and driver for broadcast data receiver |
US20030141931A1 (en) * | 2002-01-29 | 2003-07-31 | Nec Corporation | FET amplifier with temperature-compensating circuit |
US20050168286A1 (en) * | 2004-02-03 | 2005-08-04 | Nec Compound Semiconductor Devices, Ltd. | Bias circuit with threshold voltage change compensation function and temperature change compensation function |
WO2006036060A1 (en) * | 2004-09-27 | 2006-04-06 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Gate bias generator |
US20060119423A1 (en) * | 2004-12-08 | 2006-06-08 | Triquint Semiconductor, Inc. | Bias control system for a power amplifier |
EP1793491A1 (en) * | 2005-12-02 | 2007-06-06 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Amplifier with compensated gate bias voltage |
EP1195890A3 (en) * | 2000-09-25 | 2007-06-27 | Kabushiki Kaisha Toshiba | High-output amplifier |
US20080200117A1 (en) * | 2007-02-19 | 2008-08-21 | Yair Oren | Method and system for improving uplink performance |
US20090009405A1 (en) * | 2006-06-21 | 2009-01-08 | Broadcom Corporation | Integrated circuit with power supply line antenna structure and methods for use therewith |
CN101188402B (en) * | 2007-12-20 | 2010-06-09 | 北京航空航天大学 | A low-voltage frequency mixer |
US20100176877A1 (en) * | 2009-01-15 | 2010-07-15 | Fujitsu Limited | Direct-current potential generation circuit, multistage circuit and communication apparatus |
CN1992512B (en) * | 2005-12-28 | 2010-09-29 | 恩益禧电子股份有限公司 | Differential amplifier and display device using the same |
US20110084767A1 (en) * | 2009-10-05 | 2011-04-14 | Fatih Kocer | Active bias control circuit for an amplifier and method of power up sequencing the same |
US20120200339A1 (en) * | 2011-02-04 | 2012-08-09 | Kabushiki Kaisha Toshiba | Constant-voltage circuit and semiconductor device thereof |
US20150137877A1 (en) * | 2013-11-21 | 2015-05-21 | Electronics And Telecommunications Research Institute | Bias circuit using negative voltage |
US20150340999A1 (en) * | 2014-05-23 | 2015-11-26 | Mitsubishi Electric Corporation | Linearizer |
US9520836B1 (en) | 2015-08-13 | 2016-12-13 | Raytheon Company | Multi-stage amplifier with cascode stage and DC bias regulator |
US9584072B1 (en) | 2015-08-13 | 2017-02-28 | Raytheon Company | DC bias regulator for cascode amplifier |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US5068623A (en) * | 1989-05-23 | 1991-11-26 | Istituto Nazionale Di Fisica Nucleare | High-gain amplifier with low noise and low power dissipation, using field effect transistors |
US5361007A (en) * | 1991-08-30 | 1994-11-01 | Nec Corporation | Apparatus for controlling consumption power for GaAs FET |
-
1995
- 1995-04-10 US US08/419,500 patent/US5506544A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5068623A (en) * | 1989-05-23 | 1991-11-26 | Istituto Nazionale Di Fisica Nucleare | High-gain amplifier with low noise and low power dissipation, using field effect transistors |
US5361007A (en) * | 1991-08-30 | 1994-11-01 | Nec Corporation | Apparatus for controlling consumption power for GaAs FET |
Cited By (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5861779A (en) * | 1994-05-20 | 1999-01-19 | Knowles Electronics, Inc. | Impedance circuit for a miniature hearing aid |
US5675290A (en) * | 1995-08-09 | 1997-10-07 | Mitsubishi Denki Kabushiki Kaisha | Microwave amplifier circuit |
US5724004A (en) * | 1996-06-13 | 1998-03-03 | Motorola, Inc. | Voltage bias and temperature compensation circuit for radio frequency power amplifier |
US5757236A (en) * | 1996-07-01 | 1998-05-26 | Motorola, Inc. | Amplifier bias circuit and method |
US5859567A (en) * | 1996-09-24 | 1999-01-12 | Motorola, Inc. | Power amplifier circuit with temperature compensating level shifter |
US6611680B2 (en) | 1997-02-05 | 2003-08-26 | Telefonaktiebolaget Lm Ericsson (Publ) | Radio architecture |
GB2322042A (en) * | 1997-02-05 | 1998-08-12 | Ericsson Telefon Ab L M | Radio transceiver circuitry having transistors with normal and reduced threshold voltages |
GB2322042B (en) * | 1997-02-05 | 2002-02-06 | Ericsson Telefon Ab L M | Radio architecture |
US6973290B2 (en) | 1997-02-05 | 2005-12-06 | Telefonaktiebolaget L M Ericsson (Publ) | Radio architecture |
US6100753A (en) * | 1997-12-06 | 2000-08-08 | Electronics And Telecommunications Research Institute | Bias stabilization circuit |
US6255885B1 (en) | 1997-12-22 | 2001-07-03 | Per-Olof Brandt | Low voltage transistor biasing |
WO1999033168A1 (en) * | 1997-12-22 | 1999-07-01 | Telefonaktiebolaget Lm Ericsson | Low voltage transistor biasing |
US6052032A (en) * | 1998-03-13 | 2000-04-18 | Nokia Mobile Phones, Ltd. | Radio frequency amplifiers |
US6166604A (en) * | 1998-06-18 | 2000-12-26 | Nec Corporation | Semiconductor amplifier with compensated passing gain characteristic and passing phase characteristic |
US5994955A (en) * | 1998-06-26 | 1999-11-30 | Maxim Integrated Products, Inc. | Driver amplifiers with low noise standby mode characteristics |
GB2354652A (en) * | 1999-09-16 | 2001-03-28 | Samsung Electronics Co Ltd | An arrangement for biassing an rf transistor to produce a temperature invariant quiescent current |
US6304130B1 (en) | 1999-12-23 | 2001-10-16 | Nortel Networks Limited | Bias circuit for depletion mode field-effect transistors |
US6288613B1 (en) * | 2000-06-15 | 2001-09-11 | Nortel Networks Limited | Bias circuits for depletion mode field effect transistors |
US6400219B1 (en) * | 2000-08-16 | 2002-06-04 | Texas Instruments Incorporated | High-speed offset comparator |
EP1195890A3 (en) * | 2000-09-25 | 2007-06-27 | Kabushiki Kaisha Toshiba | High-output amplifier |
US20020121928A1 (en) * | 2001-02-08 | 2002-09-05 | Pace Micro Technology Plc. | Self compensating amplifier and driver for broadcast data receiver |
EP1231708A3 (en) * | 2001-02-08 | 2005-01-19 | Pace Micro Technology PLC | Self compensating amplifier and driver for broadcast data receiver |
EP1231708A2 (en) * | 2001-02-08 | 2002-08-14 | Pace Micro Technology PLC | Self compensating amplifier and driver for broadcast data receiver |
US7142254B2 (en) | 2001-02-08 | 2006-11-28 | Pace Micro Technology Plc | Self compensating video data amplifier and driver for broadcast data receiver |
US20030141931A1 (en) * | 2002-01-29 | 2003-07-31 | Nec Corporation | FET amplifier with temperature-compensating circuit |
US6906590B2 (en) * | 2002-01-29 | 2005-06-14 | Nec Corporation | FET amplifier with temperature-compensating circuit |
US20050168286A1 (en) * | 2004-02-03 | 2005-08-04 | Nec Compound Semiconductor Devices, Ltd. | Bias circuit with threshold voltage change compensation function and temperature change compensation function |
US7230493B2 (en) | 2004-02-03 | 2007-06-12 | Nec Electronics Corporation | Bias circuit with threshold voltage change compensation function and temperature change compensation function |
EP1562284A1 (en) * | 2004-02-03 | 2005-08-10 | NEC Compound Semiconductor Devices, Ltd. | Bias circuit with threshold voltage change compensation and temperature change compensation |
WO2006036060A1 (en) * | 2004-09-27 | 2006-04-06 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Gate bias generator |
US20080030274A1 (en) * | 2004-09-27 | 2008-02-07 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Gate Bias Generator |
US20060119423A1 (en) * | 2004-12-08 | 2006-06-08 | Triquint Semiconductor, Inc. | Bias control system for a power amplifier |
US7489183B2 (en) * | 2004-12-08 | 2009-02-10 | Triquint Semiconductor, Inc. | Bias control system for a power amplifier |
US7667532B1 (en) | 2004-12-08 | 2010-02-23 | Triquint Semiconductor, Inc. | Bias control system for a power amplifier |
US7961049B2 (en) | 2005-12-02 | 2011-06-14 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Amplifier with compensated gate bias |
WO2007064201A1 (en) | 2005-12-02 | 2007-06-07 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Amplifier with compensated gate bias |
EP1793491A1 (en) * | 2005-12-02 | 2007-06-06 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Amplifier with compensated gate bias voltage |
US20100066453A1 (en) * | 2005-12-02 | 2010-03-18 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Amplifier with compensated gate bias |
CN1992512B (en) * | 2005-12-28 | 2010-09-29 | 恩益禧电子股份有限公司 | Differential amplifier and display device using the same |
US8674888B2 (en) * | 2006-06-21 | 2014-03-18 | Broadcom Corporation | Integrated circuit with power supply line antenna structure and methods for use therewith |
US20090009405A1 (en) * | 2006-06-21 | 2009-01-08 | Broadcom Corporation | Integrated circuit with power supply line antenna structure and methods for use therewith |
US9312938B2 (en) | 2007-02-19 | 2016-04-12 | Corning Optical Communications Wireless Ltd | Method and system for improving uplink performance |
US20080200117A1 (en) * | 2007-02-19 | 2008-08-21 | Yair Oren | Method and system for improving uplink performance |
CN101188402B (en) * | 2007-12-20 | 2010-06-09 | 北京航空航天大学 | A low-voltage frequency mixer |
US20100176877A1 (en) * | 2009-01-15 | 2010-07-15 | Fujitsu Limited | Direct-current potential generation circuit, multistage circuit and communication apparatus |
US8319559B2 (en) | 2009-10-05 | 2012-11-27 | Hittite Microwave Corporation | Active bias control circuit for an amplifier and method of power up sequencing the same |
US20110090014A1 (en) * | 2009-10-05 | 2011-04-21 | Fatih Kocer | Switched active bias control and power-on sequencing circuit for an amplifier |
US8319560B2 (en) | 2009-10-05 | 2012-11-27 | Hittite Microwave Corporation | Switched active bias control and power-on sequencing circuit for an amplifier |
US20110084767A1 (en) * | 2009-10-05 | 2011-04-14 | Fatih Kocer | Active bias control circuit for an amplifier and method of power up sequencing the same |
US8604870B2 (en) * | 2011-02-04 | 2013-12-10 | Kabushiki Kaisha Toshiba | Constant-voltage circuit and semiconductor device thereof |
US20120200339A1 (en) * | 2011-02-04 | 2012-08-09 | Kabushiki Kaisha Toshiba | Constant-voltage circuit and semiconductor device thereof |
US20150137877A1 (en) * | 2013-11-21 | 2015-05-21 | Electronics And Telecommunications Research Institute | Bias circuit using negative voltage |
US20150340999A1 (en) * | 2014-05-23 | 2015-11-26 | Mitsubishi Electric Corporation | Linearizer |
US9467099B2 (en) * | 2014-05-23 | 2016-10-11 | Mitsubishi Electric Corporation | Linearizer |
US9520836B1 (en) | 2015-08-13 | 2016-12-13 | Raytheon Company | Multi-stage amplifier with cascode stage and DC bias regulator |
WO2017027354A1 (en) | 2015-08-13 | 2017-02-16 | Raytheon Company | Multi-stage amplifier with cascode stage and dc bias regulator |
US9584072B1 (en) | 2015-08-13 | 2017-02-28 | Raytheon Company | DC bias regulator for cascode amplifier |
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