US5459351A - Apparatus for mounting an absolute pressure sensor - Google Patents
Apparatus for mounting an absolute pressure sensor Download PDFInfo
- Publication number
- US5459351A US5459351A US08/267,634 US26763494A US5459351A US 5459351 A US5459351 A US 5459351A US 26763494 A US26763494 A US 26763494A US 5459351 A US5459351 A US 5459351A
- Authority
- US
- United States
- Prior art keywords
- die
- pressure sensor
- housing
- adhesive
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 31
- 230000001070 adhesive effect Effects 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 5
- 239000005297 pyrex Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000010979 ruby Substances 0.000 claims description 2
- 229910001750 ruby Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000002775 capsule Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241000511976 Hoya Species 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/142—Multiple part housings
- G01L19/143—Two part housings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
Definitions
- the present invention is directed toward solving the problem of stress related to the packaging configuration for a diaphragm-type absolute pressure sensor which includes a vacuum reference.
- the prior art is descriptive of a silicon based absolute sensor structure which employs implantable semiconductor strain sensitive resistors (utilizing the commonly referred to piezoresistive effect), a stress isolating structure, for example, a Pyrex tube to which the silicon pressure die is anodically bonded, and a vacuum reference, which is made during encapsulation of the sensor within the sensor package.
- the vacuum reference is maintained over time by the use of a discrete getter attached to the cover of the sensor package and "activated" during the encapsulation process.
- the package provides the mechanical pressure port interconnect between the strain sensor and the outside world and the electrical interconnect between the silicon piezoresistors (strain resistors) on the silicon die and the outside world.
- the strain sensitive piezoresistors are arranged on the silicon die and typically interconnected so as to form a full Wheatstone bridge on one surface.
- the underside of the silicon die is usually etched to form a thin diaphragm, in this case circular.
- the edges of the diaphragm correspond to the location of the piezoresistors, where strain is the greatest when the diaphragm undergoes bending as a result of pressure loading on one side.
- the desired sensitive axis is perpendicular to the diaphragm.
- a mechanical strain isolator must be employed to maintain pressure sensitivity selectivity.
- a Pyrex tube or washer, or a secondary and/or tertiary silicon strain isolation chip is often employed between the sensor and package.
- the absolute pressure sensor accuracy over time and temperature is a function of the quality of the vacuum. The lower and more stable the vacuum, the better the accuracy and repeatability of the transducer over time.
- the vacuum is established during package cover seal at which time a getter is installed and activated.
- the cover is usually sealed by laser welding in a vacuum.
- a stress-isolating apparatus for mounting an absolute pressure sensor having a self-contained vacuum reference, including a housing surrounding a cavity with the cavity having opposing and having a pressure port.
- a vacuum is pulled on the pressure port to hold the pressure sensor against the pressure port while wire bonds are made from the pressure sensor to the internal leads of the package.
- a sublimeable adhesive may be used to hold the pressure sensor to the housing during wirebond.
- a drop of adhesive is then placed on the central portion of the housing cover and when the cover is received on the housing base, the adhesive contacts the pressure sensor. As the adhesive cures, it moves the pressure sensor so that it is spaced from the housing and is supported only by the adhesive.
- FIG. 1 is a sectional drawing of an absolute pressure sensor subassembly.
- FIGS. 2-6 are sectional drawings illustrating an apparatus in accordance with the present invention for mounting the absolute pressure sensor of FIG. 1.
- FIG. 7 is a first alternate embodiment of the present invention.
- FIG. 8 is a second alternate embodiment of the present invention.
- FIG. 9 is a third alternate embodiment of the present invention.
- An apparatus for mounting an absolute pressure sensor including a self-contained vacuum reference within a housing is shown in the drawings and is generally designated 10. A general description of the wafer level processes to provide pressure sensor die 20 will be provided now.
- FIG. 1 shows the resulting sensor subassembly or sensor die 20 which includes a lower portion or base 22 having a thinned central diaphragm 24 and vacuum capsule or top cap 30 which is bonded to base 22.
- Base 22 has an upper surface 26 and a lower surface 28 and top cap 30 is bonded to upper surface 26.
- Upper surface 26 also includes bonding pads 32.
- Vacuum cavities 34 would be formed in the top cap wafer corresponding in position to the diaphragms 24 in the sensor wafer.
- Top cap 30 has top surface 36.
- the aforementioned getter used in the past would be replaced by a suitable getter material 38 sputtered to the inside of the vacuum cavity wafer prior to attachment to the sensor wafer.
- the bonding of the two wafers in a vacuum would be performed using standard anodic techniques or glass reflow techniques currently in practice. These require first the sputtering of thin film soft glasses, or anodically bonded thick film glasses on the vacuum cavity wafer that act as the adhesive layer, binding the two wafers together. The bonding itself requires heat, which serves to activate the getter by driving off adsorbed gases.
- the "clean" getter surface is now prepared to adsorb gases released over time by the sensor material in the encapsulated vacuum cavity 34.
- the vacuum encapsulation process has been described with reference to bonding a secondary silicon wafer, it is not limited to this.
- Pyrex or glass, or other materials having thermal expansion properties that match closely with silicon may be used.
- materials such as sapphire or ruby may be used.
- the material to be used must be amenable to etching.
- One material having suitable properties is a glass identified as HOYA SD-2.
- Housing 40 includes body 42 and cover 44.
- Body 42 as shown in FIG. 2 has a pressure connection 46, a passage 48 in which the pressure to be measured is present, and a chamber 50.
- Pressure port 52 is within chamber 50 and is surrounded by surface 54. Pressure port 52 makes the pressure to be measured available within cavity or chamber 50.
- Leads 56 extend through body 42 and have external end portions 58 and internal end portions 60.
- Body 42 includes peripheral surface 62.
- Cover 44 as shown in FIG. 4 has a central portion 65 including central surface 66 and a peripheral portion 68 including surface 70.
- Surface 62 of body 42 is configured for complementary receipt of surface 70 of cover 44. For example, by providing recess 72 in surface 62 and protrusion 74 in surface 70.
- cover 44 is prepared with a drop of adhesive 80 on central surface 66, as shown in FIG. 4.
- Adhesive drop 80 should be relatively inviscid, perhaps elastomeric, and have good wetting as well as high surface tension characteristics. It should shrink during cure.
- An example of a satisfactory adhesive material is Ablestik Laboratories, Rely-Imide 72254.
- the adhesive can be loaded with ceramic powders to alter the amount of shrinkage during cure.
- the shape of adhesive drop 80 is variable, as is the volume, to adjust the amount of lift-back. As Cover 44 is lowered onto body 42 as shown in FIG. 5 adhesive drop 80 contacts sensor subassembly 20 at top surface 36.
- adhesive drop 80 shrinks pulling sensor assembly 20 toward cover 44 and off of surface 54 where it was resting, exposing pressure port 52 to chamber 50.
- Adhesive drop 80 is located between fixed surface 66 and top surface 36. As curing occurs the contracting of adhesive drop 80 moves sensor subassembly 20 in a direction toward surface 66. When the curing process is completed, lower surface 28 will be in a position spaced from pressure port 52 and the pressure to be measured will be within chamber 50. Sensor subassembly 20 will then be supported by wire bonds 76 and adhesive drop 80 as shown in FIG. 6 and will be stress isolated from housing 40.
- FIG. 7 is a first alternate embodiment of the apparatus 10, using plastic as the packaging material.
- FIG. 7 shows header or body 42a with leads 56a extending through header 42a internal end portions 60a and external lead portions 58a.
- Pressure sensor subassembly or die 22a includes vacuum reference cavity 34a.
- Header 42a includes a surface 54a surrounding pressure port 52a.
- Cover 44a includes a central surface 66a where adhesive drop 80a is placed and cover 44a is complementarily received on header 42a. Cover 44a can be ultrasonically or chemically bonded to header 42a.
- FIG. 8 is a second alternate embodiment using a commonly available TO-type housing or metal package 40b with glass-metal electrical feedthroughs 84. Where the attachment method of cover 44b to body 42b at 86 can be either metal-metal welding or epoxy adhesive type.
- FIG. 8 shows sensor subassembly 20b having vacuum cavity 34b and top cap 30b having a top cap top surface 36b. Adhesive drop 80b is located between cover central surface 66b and top surface 36b.
- FIG. 9 is a third alternate embodiment of the apparatus 10.
- Sensor subassembly 20 is of the same construction as in the other embodiments.
- Housing 40c includes a body 42c and a cover 44c.
- a pressure connection 46c to a passageway 48c extends through cover 44c into chamber 50c at pressure port 52c.
- Leads 56c have internal lead portions 60c.
- Body 42c includes a peripheral surface 62c and a central surface 63c.
- Cover 44c includes a peripheral surface 68c and a central surface 66c.
- FIG. 9 illustrates that the pressure port may be located in the cover as well as in the base.
- the first and second alternate embodiments could also have a pressure port in the cover. It is only necessary that a passageway for an external pressure extend into the cavity.
- the expensive vacuum processing which in the past was done at the time that the sensor die was placed in the housing is no longer necessary because the vacuum reference is on chip.
- the present invention simplifies the design by combining the vacuum encapsulation chip function and the packaging strain isolation function into one sensor subassembly 20, and assembling it in a few steps, amenable to automation, into an inexpensive nonhermetic package.
- Apparatus 10 provides mounting of sensor subassembly 20 with low package induced strain due to the small bond area between top cap 30 and base 22 of subassembly 20 and the small bond area between adhesive drop 80 and top cap 30.
- the mounting apparatus 10 requires only low cost, low precision, discrete assembly operations which are amenable to automated assembly.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims (16)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/267,634 US5459351A (en) | 1994-06-29 | 1994-06-29 | Apparatus for mounting an absolute pressure sensor |
DE69509773T DE69509773T2 (en) | 1994-06-29 | 1995-06-26 | METHOD FOR INSTALLING AN ABSOLUTE PRESSURE SENSOR |
JP8503370A JPH10502449A (en) | 1994-06-29 | 1995-06-26 | Equipment for mounting absolute pressure sensors |
PCT/US1995/008020 WO1996000888A1 (en) | 1994-06-29 | 1995-06-26 | Apparatus for mounting an absolute pressure sensor |
EP95924686A EP0767899B1 (en) | 1994-06-29 | 1995-06-26 | Method of mounting an absolute pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/267,634 US5459351A (en) | 1994-06-29 | 1994-06-29 | Apparatus for mounting an absolute pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
US5459351A true US5459351A (en) | 1995-10-17 |
Family
ID=23019587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/267,634 Expired - Lifetime US5459351A (en) | 1994-06-29 | 1994-06-29 | Apparatus for mounting an absolute pressure sensor |
Country Status (5)
Country | Link |
---|---|
US (1) | US5459351A (en) |
EP (1) | EP0767899B1 (en) |
JP (1) | JPH10502449A (en) |
DE (1) | DE69509773T2 (en) |
WO (1) | WO1996000888A1 (en) |
Cited By (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5604363A (en) * | 1994-09-06 | 1997-02-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor with package |
US5703393A (en) * | 1995-06-27 | 1997-12-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure detecting device and manufacturing method of the device |
US5821595A (en) * | 1996-05-15 | 1998-10-13 | Dresser Industries, Inc. | Carrier structure for transducers |
US5874319A (en) * | 1996-05-21 | 1999-02-23 | Honeywell Inc. | Vacuum die bond for known good die assembly |
US6006607A (en) * | 1998-08-31 | 1999-12-28 | Maxim Integrated Products, Inc. | Piezoresistive pressure sensor with sculpted diaphragm |
US6229190B1 (en) | 1998-12-18 | 2001-05-08 | Maxim Integrated Products, Inc. | Compensated semiconductor pressure sensor |
US6236095B1 (en) | 2000-02-15 | 2001-05-22 | Dresser Equipment Goup, Inc. | Carrier structure for semiconductor transducers |
US6255728B1 (en) | 1999-01-15 | 2001-07-03 | Maxim Integrated Products, Inc. | Rigid encapsulation package for semiconductor devices |
US6313514B1 (en) * | 1997-06-06 | 2001-11-06 | Infineon Technologies Ag | Pressure sensor component |
US6346742B1 (en) | 1998-11-12 | 2002-02-12 | Maxim Integrated Products, Inc. | Chip-scale packaged pressure sensor |
US6351996B1 (en) | 1998-11-12 | 2002-03-05 | Maxim Integrated Products, Inc. | Hermetic packaging for semiconductor pressure sensors |
US6369435B1 (en) * | 1998-11-17 | 2002-04-09 | Micronas Gmbh | Semiconductor component |
US20020149069A1 (en) * | 1998-08-27 | 2002-10-17 | Janusz Bryzek | Piezoresistive sensor with epi-pocket isolation |
US6570485B1 (en) | 2000-11-17 | 2003-05-27 | Honeywell International Inc. | Transducer packaging assembly for use in sensing unit subjected to high G forces |
US20030111441A1 (en) * | 2000-06-28 | 2003-06-19 | Institut National D'optique | Miniature microdevice package and process for making thereof |
US6686653B2 (en) | 2000-06-28 | 2004-02-03 | Institut National D'optique | Miniature microdevice package and process for making thereof |
US6747346B2 (en) * | 2001-04-12 | 2004-06-08 | Fuji Electric Co., Ltd. | Container for semiconductor sensor, manufacturing method therefor, and semiconductor sensor device |
EP1517598A1 (en) * | 2003-09-17 | 2005-03-23 | Asulab S.A. | Method for mounting an electronic component on a support |
US6945120B1 (en) | 2004-07-02 | 2005-09-20 | Honeywell International Inc. | Exhaust gas recirculation system using absolute micromachined pressure sense die |
US20060000265A1 (en) * | 2004-07-02 | 2006-01-05 | Honeywell International, Inc. | Exhaust back pressure sensor using absolute micromachined pressure sense die |
US20060000288A1 (en) * | 2004-07-02 | 2006-01-05 | Honeywell International, Inc. | Differential pressure measurement using backside sensing and a single ASIC |
WO2006023936A1 (en) * | 2004-08-23 | 2006-03-02 | Honeywell International Inc. | Exhaust gas recirculation system using absolute micromachined pressure sense die |
US7216547B1 (en) * | 2006-01-06 | 2007-05-15 | Honeywell International Inc. | Pressure sensor with silicon frit bonded cap |
EP1785710A2 (en) | 2005-11-10 | 2007-05-16 | Honeywell International Inc. | Pressure Sensor Housing and Configuration |
US20070271070A1 (en) * | 2006-05-17 | 2007-11-22 | Honeywell International Inc. | Flow sensor with conditioning-coefficient memory |
US20070289389A1 (en) * | 2006-06-16 | 2007-12-20 | Honeywell International Inc. | Pressure transducer with differential amplifier |
US20080047366A1 (en) * | 2006-08-24 | 2008-02-28 | Honda Motor Co., Ltd. | Force sensor and method for producing the same |
US20090288484A1 (en) * | 2008-05-21 | 2009-11-26 | Honeywell International Inc. | Integrated mechanical package design for combi sensor apparatus |
US20100013041A1 (en) * | 2008-07-15 | 2010-01-21 | Micron Technology, Inc. | Microelectronic imager packages with covers having non-planar surface features |
US20100064818A1 (en) * | 2005-09-27 | 2010-03-18 | Honeywell International Inc. | Method of flip chip mounting pressure sensor dies to substrates and pressure sensors formed thereby |
US8065917B1 (en) | 2010-05-18 | 2011-11-29 | Honeywell International Inc. | Modular pressure sensor |
US20130098160A1 (en) * | 2011-10-25 | 2013-04-25 | Honeywell International Inc. | Sensor with fail-safe media seal |
US8616065B2 (en) | 2010-11-24 | 2013-12-31 | Honeywell International Inc. | Pressure sensor |
US20140007850A1 (en) * | 2012-07-09 | 2014-01-09 | Ford Global Technologies, Llc | Gas backpressure sensor assembly |
US8656772B2 (en) | 2010-03-22 | 2014-02-25 | Honeywell International Inc. | Flow sensor with pressure output signal |
US8695417B2 (en) | 2011-01-31 | 2014-04-15 | Honeywell International Inc. | Flow sensor with enhanced flow range capability |
US8718981B2 (en) | 2011-05-09 | 2014-05-06 | Honeywell International Inc. | Modular sensor assembly including removable sensing module |
US20140230557A1 (en) * | 2013-02-20 | 2014-08-21 | Agency for Science Technology and Research (A"STAR) | Sensor with vacuum-sealed cavity |
US9003897B2 (en) | 2012-05-10 | 2015-04-14 | Honeywell International Inc. | Temperature compensated force sensor |
US9052217B2 (en) | 2012-11-09 | 2015-06-09 | Honeywell International Inc. | Variable scale sensor |
US9359198B2 (en) | 2013-08-22 | 2016-06-07 | Massachusetts Institute Of Technology | Carrier-substrate adhesive system |
US9470593B2 (en) | 2013-09-12 | 2016-10-18 | Honeywell International Inc. | Media isolated pressure sensor |
US10046550B2 (en) | 2013-08-22 | 2018-08-14 | Massachusetts Institute Of Technology | Carrier-substrate adhesive system |
US10065853B2 (en) * | 2016-05-23 | 2018-09-04 | Rosemount Aerospace Inc. | Optimized epoxy die attach geometry for MEMS die |
US10107662B2 (en) | 2015-01-30 | 2018-10-23 | Honeywell International Inc. | Sensor assembly |
US20210341346A1 (en) * | 2020-04-30 | 2021-11-04 | Robert Bosch Gmbh | Method for producing a pressure sensor device and pressure sensor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012047527A (en) * | 2010-08-25 | 2012-03-08 | Denso Corp | Method for manufacturing physical quantity sensor device |
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JPS57100038A (en) * | 1980-12-15 | 1982-06-22 | Matsushita Electric Works Ltd | Manufacture of board for construction |
JPS58168930A (en) * | 1982-03-31 | 1983-10-05 | Hitachi Ltd | Pressure sensor unit |
JPS62203381A (en) * | 1986-03-03 | 1987-09-08 | Mitsubishi Electric Corp | Semiconductor pressure detector |
US4838089A (en) * | 1986-05-07 | 1989-06-13 | Nippondenso Co., Ltd. | Semiconductor pressure sensor |
US5029478A (en) * | 1990-07-19 | 1991-07-09 | Honeywell Inc. | Fluid isolated self-compensating absolute pressure sensor transducer |
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US5257547A (en) * | 1991-11-26 | 1993-11-02 | Honeywell Inc. | Amplified pressure transducer |
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JP2643029B2 (en) * | 1990-12-18 | 1997-08-20 | 三菱電機株式会社 | Semiconductor pressure sensor device |
-
1994
- 1994-06-29 US US08/267,634 patent/US5459351A/en not_active Expired - Lifetime
-
1995
- 1995-06-26 WO PCT/US1995/008020 patent/WO1996000888A1/en active IP Right Grant
- 1995-06-26 EP EP95924686A patent/EP0767899B1/en not_active Expired - Lifetime
- 1995-06-26 JP JP8503370A patent/JPH10502449A/en active Pending
- 1995-06-26 DE DE69509773T patent/DE69509773T2/en not_active Expired - Fee Related
Patent Citations (7)
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JPS57100038A (en) * | 1980-12-15 | 1982-06-22 | Matsushita Electric Works Ltd | Manufacture of board for construction |
JPS58168930A (en) * | 1982-03-31 | 1983-10-05 | Hitachi Ltd | Pressure sensor unit |
JPS62203381A (en) * | 1986-03-03 | 1987-09-08 | Mitsubishi Electric Corp | Semiconductor pressure detector |
US4838089A (en) * | 1986-05-07 | 1989-06-13 | Nippondenso Co., Ltd. | Semiconductor pressure sensor |
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Cited By (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5604363A (en) * | 1994-09-06 | 1997-02-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor with package |
US5703393A (en) * | 1995-06-27 | 1997-12-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure detecting device and manufacturing method of the device |
US5811321A (en) * | 1995-06-27 | 1998-09-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure detecting device and manufacturing method of the device |
US5821595A (en) * | 1996-05-15 | 1998-10-13 | Dresser Industries, Inc. | Carrier structure for transducers |
US5874319A (en) * | 1996-05-21 | 1999-02-23 | Honeywell Inc. | Vacuum die bond for known good die assembly |
US6313514B1 (en) * | 1997-06-06 | 2001-11-06 | Infineon Technologies Ag | Pressure sensor component |
US20020149069A1 (en) * | 1998-08-27 | 2002-10-17 | Janusz Bryzek | Piezoresistive sensor with epi-pocket isolation |
US6006607A (en) * | 1998-08-31 | 1999-12-28 | Maxim Integrated Products, Inc. | Piezoresistive pressure sensor with sculpted diaphragm |
US6346742B1 (en) | 1998-11-12 | 2002-02-12 | Maxim Integrated Products, Inc. | Chip-scale packaged pressure sensor |
US6351996B1 (en) | 1998-11-12 | 2002-03-05 | Maxim Integrated Products, Inc. | Hermetic packaging for semiconductor pressure sensors |
US6369435B1 (en) * | 1998-11-17 | 2002-04-09 | Micronas Gmbh | Semiconductor component |
US6229190B1 (en) | 1998-12-18 | 2001-05-08 | Maxim Integrated Products, Inc. | Compensated semiconductor pressure sensor |
US6255728B1 (en) | 1999-01-15 | 2001-07-03 | Maxim Integrated Products, Inc. | Rigid encapsulation package for semiconductor devices |
US6236095B1 (en) | 2000-02-15 | 2001-05-22 | Dresser Equipment Goup, Inc. | Carrier structure for semiconductor transducers |
US6686653B2 (en) | 2000-06-28 | 2004-02-03 | Institut National D'optique | Miniature microdevice package and process for making thereof |
US7077969B2 (en) | 2000-06-28 | 2006-07-18 | Institut National D'optique | Miniature microdevice package and process for making thereof |
US20030111441A1 (en) * | 2000-06-28 | 2003-06-19 | Institut National D'optique | Miniature microdevice package and process for making thereof |
US6570485B1 (en) | 2000-11-17 | 2003-05-27 | Honeywell International Inc. | Transducer packaging assembly for use in sensing unit subjected to high G forces |
US6747346B2 (en) * | 2001-04-12 | 2004-06-08 | Fuji Electric Co., Ltd. | Container for semiconductor sensor, manufacturing method therefor, and semiconductor sensor device |
EP1517598A1 (en) * | 2003-09-17 | 2005-03-23 | Asulab S.A. | Method for mounting an electronic component on a support |
US6945120B1 (en) | 2004-07-02 | 2005-09-20 | Honeywell International Inc. | Exhaust gas recirculation system using absolute micromachined pressure sense die |
US20060000265A1 (en) * | 2004-07-02 | 2006-01-05 | Honeywell International, Inc. | Exhaust back pressure sensor using absolute micromachined pressure sense die |
US20060000288A1 (en) * | 2004-07-02 | 2006-01-05 | Honeywell International, Inc. | Differential pressure measurement using backside sensing and a single ASIC |
US7077008B2 (en) | 2004-07-02 | 2006-07-18 | Honeywell International Inc. | Differential pressure measurement using backside sensing and a single ASIC |
US7073375B2 (en) | 2004-07-02 | 2006-07-11 | Honeywell International Inc. | Exhaust back pressure sensor using absolute micromachined pressure sense die |
WO2006023987A1 (en) * | 2004-08-23 | 2006-03-02 | Honeywell International Inc. | Differential pressure measurement using backside sensing and a single asic |
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Also Published As
Publication number | Publication date |
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DE69509773D1 (en) | 1999-06-24 |
EP0767899A1 (en) | 1997-04-16 |
DE69509773T2 (en) | 2000-05-11 |
JPH10502449A (en) | 1998-03-03 |
WO1996000888A1 (en) | 1996-01-11 |
EP0767899B1 (en) | 1999-05-19 |
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