US5381753A - Fabrication method of fine structures - Google Patents

Fabrication method of fine structures Download PDF

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US5381753A
US5381753A US08/055,728 US5572893A US5381753A US 5381753 A US5381753 A US 5381753A US 5572893 A US5572893 A US 5572893A US 5381753 A US5381753 A US 5381753A
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substrate
metal
vapor
crystal
region
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Michio Okajima
Osamu Kusumoto
Takao Tohda
Kazuo Yokoyama
Motoshi Shibata
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Definitions

  • the present invention relates to a fabrication method of fine structures to be used in quantum effect devices or the like.
  • the behavior of the electrons in the material will start to show electron wave inteference effects that cannot be observed with the electrons in a bulk material.
  • HEMT high electron mobility transistor
  • HBT heterojunction bipolar transistor
  • MQW multi-quantum well
  • the present invention provides a fabrication method for fine structures wherein the carrier trap center density, the optical absorption level or the like are small.
  • the method comprises the steps of:
  • a sharp electro-conducting tip comprised of metal which is in eutectic phase equilibrium with a material of a substrate held in close proximity with the surface of the foregoing substrate;
  • VLS vapor phase-liquid phase-solid phase
  • the element constituting the tip is evaporated therefrom and deposited on the substrate opposite thereto.
  • the gaseous atoms in ambient will be captured by the foregoing metal alloy liquid drop region on account of a VLS reaction and diffused into the metal alloy liquid drop and subsequently separated on the substrate.
  • a VLS reaction diffused into the metal alloy liquid drop and subsequently separated on the substrate.
  • FIG. 1a is a perspective view of micro mounds formed on a substrate according to the fabrication method of fine structures described in Example 1 of the present invention.
  • FIG. 1b is a perspective view of fine structures of needle like crystals successively grown on the micro mounds of FIG. 1a.
  • FIG. 2 is a perspective view of a wall like fine structure formed on a substrate as an application of the example described in FIG. 1.
  • FIG. 3 is a perspective view of the pn junction type fine structure formed on a substrate according no the fabrication method, of fine structures described in Example 2 of the present invention.
  • FIG. 4 is a schematic cross-sectional illustration of a needle like fine structure comprised of three regions and formed on a substrate according to the fabrication method of fine structures described in Example 4 of the present invention.
  • FIG. 5 is a perspective view of a fine structure for a quantum wire formed on a substrate according to the fabrication method of fine structures described in Example 5 of the present invention.
  • FIG. 6 is a perspective view of a fine structure formed on a substrate in an angle of 54.7° to the substrate in accordance with the fabrication method of fine structures described in Example 6 of the present invention.
  • Example 1 One exemplary embodiment of the present invention relative to a fabrication method of fine structures will be described in Example 1 as follows:
  • a gold tip with a curvature radius not exceeding several hundred nm was held in a position opposite to the surface of a substrate.
  • the tip was prepared from 0.1 to 1 mm diameter gold wire by electrolytic etching in hydrochloric acid, The tip could have been prepared by means of mechanical cutting and polishing,
  • the substrate was made from a doped silicon single crystal having a flat surface with (111) oriented facets and specific resistance not exceeding approximately 1 k ⁇ -cm.
  • the magnitude of the specific resistance should be decided in such a way as to pass tunnel current for observation or processing by means of scanning tunneling microscope like equipment which will be described
  • the set-up and the driving mechanism of the processing equipment as was used in the examples were the same ones as employed with a typical scanning tunneling microscope (STM) o
  • STM scanning tunneling microscope
  • the movement of the tip can be controlled freely and very finely with micron precision in the vertical direction and in the horizontal directions as well as by means of a piezo driving mechanism.
  • This equipment is also provided with the capability of controlling by feedback the vertical piezo driving mechanism through detecting the tunnel current that flows when the tip was brought to close proximity to the substrate and a specified voltage was applied.
  • the place wherein features are to be written was observed by means of this equipment under the STM observation mode.
  • the tip was then moved in the X-axis direction by 50 nm and the same pulse voltage as above was applied in the same manner as in the foregoing. This process associated with the x-axis direction was repeated 10 times. Also, the same process now taking place in the Y-axis direction was repeated 10 times.
  • FIG. 1a Such mounds created in this way are illustrated FIG. 1a, wherein item 1 is a silicon single crystal substrate, item 2 is the substrate surface and item 3 is a micro mound.
  • the pulse voltage was applied in such a way that the tip side takes on a positive bias, but the same result was obtained even when the polarity was reversed. Also, almost the same result was obtained even when the whole process was performed in air.
  • the atoms are either evaporated from the tip by ionization on account of an electric field generated across the nm order distance between the tip and the substrate (reaching as high as 10 6 to 10 7 V/cm), or evaporated from the tip when its temperature was locally increased,
  • V th which ranged from 3 to 5 V in the present example.
  • V t the suitable voltage
  • V t should be of the magnitude whereby gold is evaporated from the tips and silicon is hardly evaporated from the substrate, In this cased gold was deposited on the substrate surface equally well in vapor under an arbitrary pressure as it was in vacuum.
  • the substrate with the mounds formed thereupon was set up in an open tube CVD apparatus and the substrate temperature was elevated above the eutectic temperature in general of the foregoing systems and just below the gold's melting point in general. Typically, the substrate temperature was set between 50° C. and 1000° C.
  • Silicon was hardly separated and deposited on the silicon substrate 1 from the foregoing mixed vapor but was efficiently taken into the alloy liquid drops 5.
  • the captured silicon elements were diffused in the alloy liquid drops 5 and separated successively on the foundation of the silicon substrate surface 1.
  • the silicon needle like crystals 4 were epitaxially grown only at limited places of the base substrate.
  • the silicon atoms in the foregoing mixed vapor hit the substrate surface and the foregoing alloy liquid drop region at the same rate per unit area and unit time; but the ratio of the atoms that were condensed and contributing to the crystal growth (hereafter referred to as accommodation coefficient) was quite different between the two,
  • accommodation coefficient On the solid substrate surface where the extent of super-saturation of the exposed mixed vapor is small, the system's temperature is low, or there is little step or absorbed substance that contributes to core formation on the substrate surface (resulting in high thoroughness of the crystal surfaces), its accommodation coefficient will be small.
  • the accommodation coefficient will be close to 1. Therefore, the silicon atoms in the mixed vapor will be taken into the alloy liquid drop regions predominantly. The captured atoms are diffused in the liquid drops and separated as a crystal at the boundary with the base substrate.
  • the crystal will be epitaxially grown at limited places of the base substrate.
  • the segregation coefficient of gold in the silicon crystal does not exceed 10 -4 and gold is hardly taken into the growing needle like crystal 4.
  • the alloy liquid drop 5 will always stay on the top portion of the growing crystal, keeping the present growth mechanism intact.
  • SiCl 4 was used as the source of silicon in the present example, but additionally the hydrogen reduction method employing SiHCl 3 or SiH 3 Cl can be equally well used. Also, the thermal decomposition CVD method of SiH 4 can be used.
  • ECR electron cyclotron resonance
  • the silicon substrate with a group of mounds formed thereupon was set up in an open tube chemical vapor deposition (CVD) apparatus and the silicon substrate temperature was set to typically a temperature somewhere between 50° C. and 900° C. and a mixed vapor comprised of purified hydrogen and SiCl 4 with a specified molar fraction was introduced into the apparatus.
  • CVD chemical vapor deposition
  • fine structures whether as is or coated further over their exteriors with a specified material by means of a CVD method or the like, as described later in another embodiment example, carriers within the fine structures were able to be restricted to moving in the directions within the horizontal plane.
  • Example 2 of the present invention's embodiments will be described with the help of FIG. 3 in the following:
  • the substrate 1 was made from an n-type low resistance silicon single crystal having a flat surface with (111) oriented facets and mounds measuring several nm to several tens of ran in diameter were created by means of a gold tip according to the same method as Example 1. Then, the substrate with a group of mounds formed thereupon was set up in an open tube CVD apparatus and the substrate temperature was elevated to a temperature somewhere between the eutectic temperature in a broader sense and the gold's melting point in a broader sense for the present system in the same way as Example 1.
  • the state which is involved with the present invention is the case wherein the volume of the aforementioned metal separated is very small and the metal alloy starts to melt even at a temperature lower than the eutectic temperature of that in a bulk form. With a simple metal, its melting point is lowered.
  • the melting point and the eutectic temperature as referred to in the present invention should be understood to be in a broader sense and inclusive of those in such a micro system as mentioned above.
  • a mixed vapor comprised of purified hydrogens SiCl 4 and a very small amount of PCl 3 according to a specified molar fraction was introduced.
  • silicon and a very small amount of phosphor were supplied and an n-type silicon crystal 7 doped with a very small, amount of phosphor was grown an the place, where the metal alloy liquid drop 5 was situated, in the direction perpendicular to the substrate with a needle like configuration having almost the same cross-sectional areas as the metal alloy liquid drop 5.
  • the kind of the mixed vapor was changed when the crystal growth reached a suitable height by introducing a mixed vapor comprised of hydrogen, SiCl 4 and a very small amount of BBr 3 according to a specified molar fraction.
  • the obtained needle like fine structure 9 was molded by insulating glass for protection and electrodes were formed on the upper most surface and the bottom surface of the substrate. When a voltage was applied across both electrodes, excellent diode characteristics were presented.
  • Example 3 of the present invention's embodiment will be described in the following:
  • the substrate was made from a doped germanium single crystal having a flat surface with (111) oriented facets and specific resistance not exceeding 1 k ⁇ -cm, approximately.
  • micro mounds of gold measuring approximately several rim to several tens of nm in diameter and several one tenths of nm to several nm in height were formed.
  • a pulse voltage to make the top side to be of positive bias
  • the same results were obtained even when the polarity was changed. Besides, almost the same results were obtained even when the processing was conducted in air.
  • the substrate with the mounds formed thereupon was set up in an open tube CVD apparatus and the substrate temperature was elevated to a temperature somewhere between the present system's eutectic temperature in a broader sense, as described in the foregoing, and the germanium's melting point in a broader sense, typically between 50° C. and 900° C.
  • a mixed vapor comprised of purified hydrogen and GeCl 4 prepared according to a specified molar fraction and then, in the same way as was in Example 1, a needle like germanium crystal measuring approximately several nm to several tens of nm in diameters and having almost the same cross-sectional area as the metal alloy liquid drop region marked on the substrate, was grown in the direction perpendicular to the substrate surface.
  • the substrate was made from a doped GaAs single crystal having a flat surface with (111)B oriented facets and specific resistance not exceeding 1 k ⁇ -cm, approximately.
  • a gold tip was held in vacuum in opposition to the germanium substrate surface and a specified pulse voltage was applied in the same way as was in Example 1, and then micro mounds of gold measuring approximately several nm to several tens of nm in diameter and several one tenths of nm to several nm in height were formed on the GaAs substrate surface.
  • a pulse voltage to make the tip side to be of positive bias was applied in the present example, the same results were obtained even when the polarity was changed. Besides, almost the same results were obtained even when the processing was conducted in air.
  • the substrate with the mounds formed thereupon was set up in a metal organic vapor phase epitaxy (MOVPE) apparatus and the substrate temperature was elevated to a temperature somewhere between approximately 100° C. and 550° C. by means of a high frequency heating method.
  • MOVPE metal organic vapor phase epitaxy
  • Example 2 a needle like InAs crystal measuring approximately several nm to several tens of rim in diameter, and having almost the same cross-sectional area as the metal alloy liquid drop region marked on the substrate, was grown in the direction perpendicular to the substrate surface.
  • the grown crystal was a single crystal of good quality. Particularly, a good result in terms of selective growth was obtained under the growth temperature not exceeding 500° C. In other words, it was confirmed that the crystal growth on the substrate surface which is in contact with the alloy liquid drop region progresses at least twice as fast as the growth of a substance formed on the substrate surface not in contact with the alloy liquid drop region does under the foregoing growth temperature.
  • the needle like InAs crystal was heteroepitaxially grown on the GaAs substrate, but also a GaAs micro needle like crystal was able to be formed homoepitaxially on the GaAs substrate according to the same method.
  • the extremely fine structures were able to be formed between single atoms or compound semiconductors of different groups by heteroepitaxial growth as indicated by growth of a GaAs micro needle like crystal on a Si substrate surfaces for example.
  • Example 4 of the present invention's embodiment will be described with the help of FIG. 4 in the following:
  • a p-type GaAs single crystal substrate 10 having a flat surface with (111)B oriented facets and low resistance was used as the base substrate .
  • Example 2 In the same way as performed in Example 1, a gold tip was held over the GaAs substrate in opposition to the substrate surface and the specified pulse voltage was applied to form a micro mound of gold measuring approximately several nm to several tens of run in diameter and several one tenths of nm to several nm.
  • the substrate was set up in a MOVPE apparatus and the substrate temperature was elevated to a temperature approximately between 100° C. and 550° C. by means of a high frequency heating method.
  • Example 1 a zinc doped p-type AlGaAs needle like crystal 11 having almost the same cross-sectional area as the metal alloy liquid drop region marked on the substrate surface and measuring several nm to several tens of nm, approximately, was grown in the direction perpendicular to the substrate.
  • the kind of the mixed vapor was changed to a mixed vapor of trimethylgallium and hydrogen diluted arsine further added with a very small amount of diethylzinc prepared under a specified pressure and according to a specified molar fraction.
  • a p-type GaAs region 12 was formed continuously on the foregoing p-type AlGaAs needle like crystal 11.
  • the vapor was again changed to a mixed vapor of trimethyl-aluminum, trimethylgallium and hydrogen diluted arsine added with a very small amount of hydrogen selenide prepared under a specified pressure and according to a molar fraction.
  • an n-type AlGaAs region doped with selenium 13 was continuously grown halfway on the foregoing needle like crystal.
  • a needle like fine structure 14 was obtained having regions of differing conduction types and bandgaps, formed on a p-type GaAs substrate 10 and comprised of p-type AlGaAs/p-type GaAs/n-type AlGaAs in that order,
  • the structure 14 measured approximately several nm to several tens of nm in diameter and several nm to several tens of um in length.
  • the obtained double hetero type needle like fine structure 14 was molded by insulating glass 15 for protection. Then a Au/Ge/Ni alloy electrode 16 and a Au/Zu alloy electrode 17 were formed on the upper most surface and the bottom surface of the substrate respectively. When a regular bias voltage was applied across the electrodes, light was irradiated efficiently.
  • a needle like fine structure comprising three regions of AlGaAs/GaAs/AlGaAs formed on a GaAs substrate in that order as shown in FIG. 4, for example was able to be fabricated by the same method as the foregoing.
  • This structure measured around 10 nm and less in diameter with the GaAs region not exceeding 20 nm, approximately, in length.
  • This GaAs region measures around 20 nm and less in both the direction within the horizontal plane and the vertical direction, and the electron state therein is quantitized in three-dimensions with a resultant formation of the so called quantum box.
  • Example 5 of the present invention's embodiments a successful formation of quantum wire oriented in the direction parallel to the substrate will be described with the help of FIG. 5 in the following:
  • the base substrate was made from a CaAs single crystal substrate 18 having a flat surface with (111)B oriented facets and low resistance and thereupon was formed an AlGaAs buffer layer 19 having a specified thickness.
  • a micro ridge of gold measuring approximately several nm to several tens of nm in width and several one tenths of rim to several nm in height was created.
  • this substrate was set up in the MOVPE apparatus and the substrate temperature was elevated from outside to a temperature approximately between 100° C. and 550° C. by means of a high frequency heating method.
  • the kind of the mixed vapor was changed to a mixed vapor of trimethylaluminum, trimethylgallium and hydrogen diluted arsine prepared under a specified pressure and according to a specified molar fraction.
  • an AlGaAs region 21 was continuously grown over the foregoing GaAs belt like fine structure 20 after changing halfway with a resultant formation of a layered fine structure 22 comprised of these.
  • the crystal forming condition was altered. More specifically, the conditions were changed so as to make the crystal epitaxially grow directly from the surface of the founding AlGaAs buffer layer 19 by having the substrate temperature elevated to around 550° C. and more to the like.
  • an AlGaAs coating layer 23 was formed all over to a specified thickness.
  • This growth mode wherein the growth process was performed all over the regions might have been carried out by means of a molecular beam epitaxial growth method or the like. Accordingly, a GaAs belt like fine structure 20 with its cross-section measuring around 20 nm and less both longitudinally and laterally and with its four sides surrounded by an AlGaAs crystal serving as a potential barrier was completed.
  • the present fine structure was made from a good quality single crystal that was grown according to the epitaxial mechanism in the same way as was employed in the foregoing embodiment examples, the crystal had very few scattering centers and non-radiative recombination centers of carriers that were caused by various lattice defects.
  • the interfaces with the surrounding AlGaAs crystals are excellent and the interface state density is small. Therefore, this will serve as a good quantum wire.
  • Example 6 of this invention's embodiment will be described with the help of FIG. 6 in the following:
  • the crystal orientation of the base substrate wherein the growth speed of the crystal locally grown is fastest, was the same as the facet orientation of the substrate surface.
  • the needle like or wall like fine structure was grown in the direction perpendicular to the substrate surface.
  • FIG. 6 shows such a case, wherein a GaAs substrate 24 with (011) oriented facets was used.
  • a gold tip was held over the substrate surface in opposition thereto and moved in the direction of [011] of the substrate while a pulse voltage was applied at a specified duty cycle. Then, a micro ridge of gold measuring approximately several nm to several tens of nm in width was observed to have been created on the substrate surface.
  • the substrate was set up in a MOVPE apparatus and the substrate temperature was elevated to a temperature adjusted to fall between 100° C. and 550° C. by means of a high frequency heating method. Then, a mixed vapor of trimethylgallium and hydrogen diluted arsine prepared under a specified pressure and according to a specified molar fraction was introduced.
  • An extremely thin GaAs wall like structure 25 was grown at the place where the foregoing ridge was situated and the wall made an angle of 54.7° to the substrate surface.
  • Example 7 of the present invention's embodiment will be described in the following:
  • a sharp tip was held at a position close and opposite to a substrate in a vapor containing a specified metal element.
  • a tunnel current or a field emission current was passed across the tip and the substrate with resultant decomposition of the vapor and formation of micro mounds on the substrate.
  • a vapor of C 5 H 5 Pt(C 3 H 5 ) was introduced to a chamber and its pressure was set to typically 5 ⁇ 10 -6 to 760 Torr.
  • a substrate was made from a low resistance silicon single crystal with a flat surface and (111) oriented facets.
  • a tungsten tip was held at a position close and opposite to the silicon substrate.
  • This micro mound was considered to be comprised of Pt which was deposited after decomposition of the foregoing vapor on account of a tunnel current or a field emission current.
  • the pulse voltage was applied so as to make the sample side to be positive biased but, even when the polarity was changed, the same results were obtained.
  • the organometallic vapor as used in the present example can be Pt containing vapors of a prescribed specification other than the aforementioned C 5 H 5 Pt(C 3 H 5 ) and also can be different organometallic vapors containing Au, Ag, Cu, Pd, Ni or the like.
  • Pt, Au or the like can be used as the tip in place of W.
  • the present exemplary embodiment was effectively applied in the case wherein other single element semiconductors or compound semiconductors than silicon were involved.
  • Example 8 of the present invention will be described in the following:
  • a PtIr tip and a silicon (111) substrate were placed in a diluted solution of KAu(CN) 2 .
  • the micro mound measured several nm to several hundreds of nm, approximately in diameter.
  • This micro mound was considered to have been made from the Au ions which had been contained in the foregoing solution and were neutralized by a tunnel current or a field emission current and deposited.
  • the solution used in the present embodiment example can be other Au containing solutions of a prescribed specification than the aforementioned KAu(CN) 2 and also can be different solutions containing Ag, Cu, Pt, Pd, Ni or the like. Also, W, Au or the like can be used as the tip in place of PtIr.
  • the substrate surface may be exposed directly to a vapor.
  • the vapor includes at least one of the group consisting of a halogenide, an organometallic compound and a hydride which contains at least a specified element (e.g., the substrate material), under a specified pressure.
  • the vapor may be decomposed first by using energy from heat, electro-magnetic waves or the like.
  • the specified element dissolves into the alloy liquid drop region.
  • the present exemplary embodiment was effectively applied to the case wherein other single element semiconductors or compound semiconductors than silicon were involved.
  • the conditions required of the metal that composes a micro mound formed on a substrate and also the substrate material are considered to include the following:
  • the aforementioned metal should be capable of being in an eutectic phase equilibrium with the substrate material and the eutectic temperature should be lower than the melting point of any of the foregoing metal and the substrate material.
  • the segregation coefficient of the above metal in the micro crystalline materials wherein said metal is separated should be as small as possible to make it difficult for said metal to be taken into said crystalline material with a resultant great contribution to formation of the needle like or wall like fine structures.
  • micro pillar of less than several tens of nm in diameter or a micro wall of less than several tens of nm in thickness.
  • the present fabrication method makes it possible to create fine structures of any configurations, at least within a two-dimensional plane, and consequently makes it possible to realize a fine structured device which has been difficult to fabricate according to the prior art fine structure fabrication method of applying a half atom layer alternating epitaxial growth or a facet growth onto an off oriented substrate.
  • these fine structures are made from the single crystals of excellent quality prepared according to the epitaxial growth mechanism.
  • these fine structures When compared with the prior art fine structures prepared by means of focused ion beam exposure or the like, these fine structures have very few carrier trap centers, light absorption levels and the like due to lattice defects. These fine structures as they are; or as coated with a specified material by means of CVD, MBE or the like, for example, can effectively contain carriers therein.
  • the present fabrication method has made it possible to produce fine structures having few carrier trap centers and light absorption levels and also arbitrary configuration at least within a two-dimensional plane, otherwise impossible with the prior art fabrication method of fine structures.

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  • Crystallography & Structural Chemistry (AREA)
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US5858862A (en) * 1996-09-25 1999-01-12 Sony Corporation Process for producing quantum fine wire
WO1999058925A3 (fr) * 1998-05-13 2000-02-17 Evgeny Invievich Givargizov Porte-a-faux a sonde produite par tirage de whiskers et son procede de production
US6036774A (en) * 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
US6130142A (en) * 1996-10-28 2000-10-10 Sony Corporation Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
US20020129761A1 (en) * 2001-01-18 2002-09-19 Tomohide Takami Nanofiber and method of manufacturing nanofiber
US6489629B1 (en) * 1993-11-02 2002-12-03 Matsushita Electric Industrial Co., Ltd. Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
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EP0568316A3 (en) 1996-03-06
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JP2697474B2 (ja) 1998-01-14
EP0568316B1 (fr) 1998-07-22
EP0568316A2 (fr) 1993-11-03

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