US5086013A - Method for fine patterning - Google Patents
Method for fine patterning Download PDFInfo
- Publication number
- US5086013A US5086013A US07/388,595 US38859589A US5086013A US 5086013 A US5086013 A US 5086013A US 38859589 A US38859589 A US 38859589A US 5086013 A US5086013 A US 5086013A
- Authority
- US
- United States
- Prior art keywords
- photoresist layer
- resist pattern
- layer
- ions
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000000059 patterning Methods 0.000 title claims abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 76
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 150000002500 ions Chemical class 0.000 claims abstract description 30
- 239000002344 surface layer Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 32
- 239000002904 solvent Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- -1 silicon ions Chemical class 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2065—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam using corpuscular radiation other than electron beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/949—Energy beam treating radiation resist on semiconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
Definitions
- the present invention relates to a method for fine patterning and particularly to an improvement in a method for fine patterning useful in manufacturing of semiconductor devices.
- a lift-off method is known as a method for forming a fine conductor pattern for a semiconductor device and it is described for example by J. M. Frary and P. Seese in Semiconductor International, Vol. 4, No. 12, 1981, pp. 72-88.
- the lift-off method is easier in dimensional control of patterns compared with an etching method and makes it possible to form a fine pattern with a high resolution.
- FIGS. 1A to 1D are schematic sectional views illustrating an example of a conventional lift-off method.
- a resist layer 2 is applied to a substrate 1.
- Light ions which can attain the substrate 1 are implanted into predetermined regions 3 of the resist layer 2 by a focused ion beam (FIB) method for example.
- FIB focused ion beam
- the resist layer 2 is developed by a suitable solvent, so that the ion-implanted regions 3 are removed. As a result, a pattern of the resist portions 2a is left on the substrate 1.
- conductor layers 4a and 4b are deposited from above by vacuum evaporation for example to cover the upper surfaces of the resist portions 2a and the exposed upper surface regions of the substrate 1.
- the resist portions 2a are removed by using a suitable solvent and consequently the conductor layers 4a on the resist portions 2a are lifted off.
- the solvent contacts the resist portions 2a through the gaps between the conductor layers 4a and 4b as shown by the arrow 1G.
- a desired conductor pattern 5 is left on the substrate 1 after the resist portions 2a and the conductor layers 4a thereon have been removed.
- the conductor pattern 5 becomes fine to increase an aspect ratio (i.e., a ratio of a height to a width) of the conductor 4b
- the respective gaps 1G between the conductor layers 4a and 4b in FIG. 1C tend to be decreased. Accordingly, insufficient contact occurs in the resist portions 2a and the solvent through the respective gaps 1G, and the conductor layers 4a on the resist portions 2a are liable to be incompletely lifted off.
- conductor portions 4b of a submicron or quartermicron width are formed on the substrate 1, the resist portions 2a and the conductor layers 4a thereon might partially remain.
- FIGS. 2A to 2D are schematic sectional views illustrating another lift-off method which was devised prior to the present invention.
- a resist layer 21 is applied to a silicon substrate 20.
- Heavy ions such as gallium are implanted into predetermined regions in the surface of the resist layer 21.
- the resist layer 21 is etched by oxygen plasma and a resist pattern 24 for lift-off is formed.
- resist portions 21a remain in regions under the implanted regions 22.
- undercuts 25 are also formed under the implanted regions 22.
- a conductor material such as a metal is deposited from above the resist pattern 24 by vacuum evaporation, thereby forming a conductor layer 26 on the respective implanted regions 22 and a conductor layer 27 on the substrate 20.
- the resist pattern 24 is removed by a suitable solvent and accordingly the conductor layers 26 on the implanted regions 22 are lifted off. As a result, a desired conductor pattern 28 is left on the substrate 20.
- the undercuts 25 make it easy to contact the respective resist portions 21a and the solvent through the gaps 2G between the implanted regions 22 and the conductor layer 27 on the substrate 20. Consequently, the conductor layers 26 on the implanted regions 22 can be lifted off more reliably.
- the resist layer 21 is also etched under the implanted regions 22.
- the etching rate is isotropic and accordingly the resist layer 21 is etched concentrically with each of the lower corners Q and P of the implanted regions 22.
- the respective implanted regions 22 are separated from the resist layer 21 when the etching depth d becomes equal to a half of the width w of each implanted region 22.
- the implanted regions 22 can not be supported in the predetermined positions and the structure of the resist pattern 24 for the lift-off is deformed.
- the width w of each implanted region 22 becomes small. In that case, the height h of the respective resist portions 21a shown in FIG. 2B can not be made large and conductors 27 of a high aspect ratio can not be formed.
- an object of the present invention is to improve a method for fine patterning.
- a method for fine patterning includes the steps of: applying a photoresist layer to a substrate; implanting ions into predetermined regions in a surface layer of the photoresist layer; irradiating the photoresist layer with ultraviolet from above; developing the photoresist layer to form a resist pattern for lift-off; depositing a desired material to a prescribed thickness from above the resist pattern; and lifting off the material on the resist pattern by removing the resist pattern, whereby a fine pattern of the desired material is left on the substrate.
- FIGS. 1A to 1D are schematic sectional views illustrating an example of a conventional lift-off method.
- FIGS. 2A to 2D are schematic sectional views illustrating another example of another lift-off method known prior to the subject invention.
- FIG. 3 is a schematic sectional view illustrating a developing process in the lift-off method shown in FIGS. 2A to 2D.
- FIG. 4 is a graph showing an influence exerted by ion implantation on ultraviolet transmittance of a photoresist layer.
- FIG. 5 is a graph showing a relation between a dose of ions and a developing rate of photoresist.
- FIGS. 6A to 6E are schematic sectional views illustrating a lift-off method according to an embodiment of the present invention.
- a layer of resist including naphthoquinone diazide as photosensitive constituent (e.g., OFPR-800 available from Tokyo Oka Kogyo Co., Ltd.) was applied to a glass substrate.
- Various doses of gold or silicon ions were implanted into the surfaces of the respective photoresist layers by the FIB method. Intensities of ultraviolet transmitting through those ion-implanted regions were measured by an illuminance meter.
- the measured ultraviolet transmittances are shown in relation to the doses of ions.
- the ultraviolet transmittance of the photoresist layer decreases according to the increase of the dose of ions.
- the implanted regions function as photomasks and the photoresist layer under the implanted regions is less exposed to the ultraviolet.
- Each of the photoresist layers implanted with silicon ions and exposed to the ultraviolet was developed by a developing solution TMAH (TETRA-METHYL AMMONIUM HYDROXIDE) (available from Tokyo Oka Kogyo Co., Ltd. as NMD-3) and the developing rates under the implanted regions were measured.
- TMAH TETRA-METHYL AMMONIUM HYDROXIDE
- the measured developing rates are shown in relation to the doses of ions.
- the curves A, B and C represent the developing rates in the photoresist layers exposed to ultraviolet rays of 37.4 mJ/cm 2 , 74.8 mJ/cm 2 and 130.9 mJ/cm 2 , respectively.
- the level of the developing rate of about 6 ⁇ m/min shown by the chain line corresponds to the developing rate in he case in which a photoresist layer not implanted with ions is exposed directly to ultraviolet rays of 130.9 mJ/cm 2 .
- the developing rate of the photoresist layer under the implanted regions decreases according to the increase of the dose of ions.
- the dose of ions it is possible to decrease the developing rate in the horizontal direction of the photoresist layer under the implanted regions.
- FIG. 6A to 6E are schematic sectional views illustrating a method according to an embodiment of the present invention.
- the photoresist layer 31 was exposed to ultraviolet ray 33 of 130.9 mJ/cm 2 by using the implanted regions 32 as photomasks.
- the photoresist layer 31 is developed by developer NMD-3.
- the developing rate in the photoresist portions 31a covered with the photomasks 32 was about 2.5 ⁇ m/min and the developing rate in the photoresist portions 31b not covered with the photomasks 32 was about 5.9 ⁇ m/min.
- the photoresist portions 31b not covered with the photomasks 32 were entirely removed in a developing period of about 14 seconds.
- the forms of the undercuts 35 can be controlled by changing the dose of the ions.
- a conductor material of aluminum or gold was deposited with a thickness of 0.7 ⁇ m from above the resist pattern 34 and a conductor layer 36 on the implanted regions 32 and a conductor layer 37 on the substrate 30 were formed.
- the resist pattern 34 was removed and in consequence the conductor layer portions 36 on the implanted regions 32 were lifted off. As a result, a desired conductor pattern 38 was left on the substrate 30.
- This pattern 38 may be used as electrodes for a semiconductor device having the silicon substrate 30.
- the removal of the resist pattern was effected by exposing the pattern to a solvent or a plasma atmosphere.
- the solvent for this purpose is for example acetone or fluoric acid and the plasma atmosphere is for example an oxygen plasma atmosphere.
- the resist pattern 34 can be reliably removed by using a solvent or a plasma atmosphere easily penetrating through the large gaps 3G.
- conductor portions 37 of a high aspect ratio having a relative large thickness compared with a small width thereof are deposited on the substrate 30, sufficiently large gaps 3G can be obtained and the conductor portions 36 formed on the resist pattern can be lifted off reliably.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
- Electron Beam Exposure (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-200553 | 1988-08-10 | ||
JP63200553A JPH0249416A (en) | 1988-08-10 | 1988-08-10 | Formation of fine pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
US5086013A true US5086013A (en) | 1992-02-04 |
Family
ID=16426225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/388,595 Expired - Fee Related US5086013A (en) | 1988-08-10 | 1989-08-02 | Method for fine patterning |
Country Status (2)
Country | Link |
---|---|
US (1) | US5086013A (en) |
JP (1) | JPH0249416A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5466540A (en) * | 1994-02-14 | 1995-11-14 | Ceridian Corporation | Mark of an electronic component lid |
US5486483A (en) * | 1994-09-27 | 1996-01-23 | Trw Inc. | Method of forming closely spaced metal electrodes in a semiconductor device |
EP0860743A2 (en) * | 1997-02-25 | 1998-08-26 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method and semiconductor processing method |
CN100437359C (en) * | 2005-12-31 | 2008-11-26 | 厦门大学 | Anti-stripping photolithography method for integrated circuit |
US20110070694A1 (en) * | 2005-06-20 | 2011-03-24 | Nippon Telegraph And Telephone Corporation | Diamond semiconductor element and process for producing the same |
US20110250397A1 (en) * | 2010-04-13 | 2011-10-13 | National Taipei University Of Technology | Method of forming an undercut microstructure |
CN108680344A (en) * | 2018-05-23 | 2018-10-19 | 中国科学技术大学 | A kind of manufacturing method for the optical high resolution rate test target containing hundred nano-scale through-holes |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04129921U (en) * | 1991-05-22 | 1992-11-30 | 株式会社日本製鋼所 | Multistage thrust bearing device for twin screw extruder |
US6503693B1 (en) * | 1999-12-02 | 2003-01-07 | Axcelis Technologies, Inc. | UV assisted chemical modification of photoresist |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5976428A (en) * | 1982-10-26 | 1984-05-01 | Nippon Telegr & Teleph Corp <Ntt> | Formation of fine pattern |
JPS6295856A (en) * | 1985-10-23 | 1987-05-02 | Matsushita Electronics Corp | Formation of metallic pattern |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153435A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacture of semiconductor device |
-
1988
- 1988-08-10 JP JP63200553A patent/JPH0249416A/en active Pending
-
1989
- 1989-08-02 US US07/388,595 patent/US5086013A/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5976428A (en) * | 1982-10-26 | 1984-05-01 | Nippon Telegr & Teleph Corp <Ntt> | Formation of fine pattern |
JPS6295856A (en) * | 1985-10-23 | 1987-05-02 | Matsushita Electronics Corp | Formation of metallic pattern |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5466540A (en) * | 1994-02-14 | 1995-11-14 | Ceridian Corporation | Mark of an electronic component lid |
US5486483A (en) * | 1994-09-27 | 1996-01-23 | Trw Inc. | Method of forming closely spaced metal electrodes in a semiconductor device |
EP0860743A2 (en) * | 1997-02-25 | 1998-08-26 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method and semiconductor processing method |
EP0860743A3 (en) * | 1997-02-25 | 1999-11-10 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method and semiconductor processing method |
US20110068352A1 (en) * | 2005-06-20 | 2011-03-24 | Nippon Telegraph And Telephone Corporation | Diamond semiconductor element and process for producing the same |
US20110070694A1 (en) * | 2005-06-20 | 2011-03-24 | Nippon Telegraph And Telephone Corporation | Diamond semiconductor element and process for producing the same |
US8328936B2 (en) | 2005-06-20 | 2012-12-11 | Nippon Telegraph And Telephone Corporation | Producing a diamond semiconductor by implanting dopant using ion implantation |
US8486816B2 (en) * | 2005-06-20 | 2013-07-16 | Nippon Telegraph And Telephone Corporation | Diamond semiconductor element and process for producing the same |
US8487319B2 (en) | 2005-06-20 | 2013-07-16 | Nippon Telegraph And Telephone Corporation | Diamond semiconductor element and process for producing the same |
CN100437359C (en) * | 2005-12-31 | 2008-11-26 | 厦门大学 | Anti-stripping photolithography method for integrated circuit |
US20110250397A1 (en) * | 2010-04-13 | 2011-10-13 | National Taipei University Of Technology | Method of forming an undercut microstructure |
US8377320B2 (en) * | 2010-04-13 | 2013-02-19 | National Taipei University Of Technology | Method of forming an undercut microstructure |
CN108680344A (en) * | 2018-05-23 | 2018-10-19 | 中国科学技术大学 | A kind of manufacturing method for the optical high resolution rate test target containing hundred nano-scale through-holes |
Also Published As
Publication number | Publication date |
---|---|
JPH0249416A (en) | 1990-02-19 |
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