US5051204A - Multi-element metal chalocogenide - Google Patents
Multi-element metal chalocogenide Download PDFInfo
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- US5051204A US5051204A US07/446,548 US44654889A US5051204A US 5051204 A US5051204 A US 5051204A US 44654889 A US44654889 A US 44654889A US 5051204 A US5051204 A US 5051204A
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- 229910052751 metal Inorganic materials 0.000 title abstract description 25
- 239000002184 metal Substances 0.000 title abstract description 25
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 42
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 12
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 12
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 10
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 8
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 8
- 229910052745 lead Inorganic materials 0.000 claims abstract description 8
- 229910052718 tin Inorganic materials 0.000 claims abstract description 8
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 description 30
- 239000011669 selenium Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 8
- 238000000634 powder X-ray diffraction Methods 0.000 description 7
- 229910052798 chalcogen Inorganic materials 0.000 description 4
- 150000001787 chalcogens Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
- C01G1/12—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B17/00—Sulfur; Compounds thereof
- C01B17/20—Methods for preparing sulfides or polysulfides, in general
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/78—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by stacking-plane distances or stacking sequences
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Catalysts (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
A novel, multi-element metal chalcogenide is disclosed which has the following general formula (I):
X.sub.(1-a)x X'.sub.ax Y.sub.y Z.sub.z (I)
wherein X stands for at least one element selected from Bi, Sb and As, X1 stands for at least one element selected from Pb, Sn and Ge, Y stands for at least one element selected from Ti, V, Nb and Ta, Z stands for at least one element selected from S, Se and Te, a is a number of 0-1, x is a number of 0.8-1.2, y is a number of 0.8-1.2 or 1.6-2.4 and z is a number of 2.4-3.6 when y is 0.8-1.2 or a numeral of 4.0-6.0 when y is 1.6-2.4.
Description
This invention relates to a multi-element metal chalcogenide useful for application to batteries, optical elements and superconducting materials.
The chalcogen is a general term of an element group consisting of sulfur (S), selenium (Se) and tellurium (Te). Since the chalcogen is small in electronegativity as compared with oxygen, metal chalcogenides have less ionic bonding property but greater covalent bonding property as compared with metal oxides. Accordingly, the metal chalcogenides are essentially great in anisotropy of bonding and tend to form a lower dimensional substance having a layered, chain or channel structure. In respect of physical properties, the highest occupied level of the electron of chalcogen is lower than that of oxygen. Thus, while oxides chiefly form insulators and semi conductors with a large band-gap, chalcogenides tend to form good electrical conductors and semiconductors with a small band gap. Taking advantages of these structural and physical characteristics, metal chalcogenides are expected to be applicable widely to optical materials, such as solar battery, non-linear optical materials and luminescent materials, superconducting materials (especially in the case of Chevrel compounds), materials for lithium battery, etc. A part of these is already put into practice.
At present, the majority of ceramic materials now put into practice are oxides. Under the circumstance that demands for materials for manufacturing industrial products are increasingly diversified henceforth, necessity-for developing metal chalcogenides for use as such materials, which possess characteristics not owned by oxides, is anticipated to be more enhanced. At present known chalcogenides include chalcogen spinel (such as CdCr2 S4), chlcopyrite (such as CuInS2) and Chevrel (such as PbMo6 S8).
In accordance with the present invention there is provided a chalcogenide having the following general formula (I):
X.sub.(1-a)x X'.sub.ax Y.sub.y Z.sub.z (I)
wherein X stands for at least one element selected from Bi, Sb and As, X' stands for at least one element selected from Pb, Sn and Ge, Y stands for at least one element selected from Ti, V, Nb and Ta, Z stands for at least one element selected from S, Se and Te, a is a number of 0-1, x is a number of 0.8-1.2, y is a number of 0.8-1.2 or 1.6-2.4 and z is a number of 2.4-3.6 when y is 0.8-1.2 or a numeral of 4.0-6.0 when y is 1.6-2.4.
More specifically, the chalcogenides according to the present invention include the following six groups:
(1) Chalcogenides having the following composition:
X.sub.x Y.sub.y Z.sub.z
wherein
X: Bi, Sb and/or As,
Y: Ti, V, Nb and/or Ta,
Z: S, Se and/or Te,
x: a number of 0.8≦x≦1.2,
y: a number of 0.8≦y≦1.2, and
z: a number of 2.4 ≦z ≦3.6;
(2) Chalcogenides having the following composition:
X.sub.x Y.sub.y Z.sub.z
wherein
X: Bi, Sb and/or As,
Y: Ti, V, Nb and/or Ta,
Z: S, Se and/or Te,
x: a number of 0.8≦x≦1.2,
y: a number of 1.6≦y≦2.4, and
z: a number of 4.0≦z≦6.0;
(3) Chalcogenides having the following composition:
X'.sub.x Y.sub.y Z.sub.z
wherein
X': Pb, Sn and/or Ge,
Y: Ti, V, Nb and/or Ta,
Z: S, Se and/or Te,
x: a number of 0.8≦x≦1.2,
y: a number of 0.8≦y≦1.2, and
z: a number of 2.4≦z≦3.6;
(4) Chalcogenides having the following composition:
X'.sub.x Y.sub.y Z.sub.z
wherein
X': Pb, Sn and/or Ge,
Y: Ti, V, Nb and/or Ta,
Z: S, Se and/or Te,
x: a number of 0.8≦x≦1.2,
y: a number of 1.6≦y≦2.4, and
z: a number of 4.0≦z≦6.0;
(5) Chalcogenides having the following composition:
X.sub.(1-a)x X'.sub.ax Y.sub.y Z.sub.z
wherein
X: Bi, Sb and/or As,
X': Pb, Sn and/or Ge,
Y: Ti, V, Nb and/or Ta,
Z: S, Se and/or Te,
a: a number of 0<a<1,
x: a number of 0.8≦x≦1.2,
y: a number of 0.8≦y≦1.2, and
z: a number of 2.4≦z≦3.6; and
(6) Chalcogenides having the following composition:
X.sub.(1-a)x X'.sub.ax Y.sub.y Z.sub.z
wherein
X: Bi, Sb and/or As,
X': Pb, Sn and/or Ge,
Y: Ti, V, Nb and/or Ta,
Z: S, Se and/or Te,
a: a number of 0 <a <1,
x: a number of 0.8≦x≦1.2,
y: a number of 1.6≦y≦2.4, and
z: a number of 4.0≦z≦6.0.
The multi-element metal chalcogenide according to the present invention may be prepared by a method including the steps of mixing powdery elements and/or powdery metal chalcogenides (MZn where M is a metal, Z is S, Se or Te and n is a number of 1≦n≦2) in amounts providing a composition corresponding to that of the above general formula, charging the mixture in a closed vessel such as a quartz tube maintained under vacuum or in an inert atmosphere, and heating the mixture at 400°-1200°C. The resulting product is cooled to room temperature to obtain a multi-element metal chalcogenide.
The thus obtained multi-element metal chalcogenide is generally in the form of brown to black powder and its powder X-ray diffraction pattern shows diffraction lines attributable to a set of parallel planes. Depending on conditions, the product is obtained in the form of laminar crystals which easily undergo cleavage. This suggests that the product has a layered structure.
In the metal chalcogenides according to the present invention, the composition of the elements X (or X+X'), Y and Z is usually designated as 1:1:3 (XYZ3) or 1:2:5 (XY2 Z5). Since, however, the element Z may be non-stoichiometric, the number z for the element Z is not always exactly 3 or 5 but ranges from 2.4 to 3.6 or from 4.0 to 6.0. This also applies to the numbers x and y.
The following examples will further illustrate the present invention.
A multi-element metal chalcogenide having the composition of the above group (1) was prepared as follows:
Powdery elements corresponding to the composition shown in Table 1 were weighed in a proportion corresponding to the composition, enclosed in a quartz vessel under vacuum, heated at a temperature of 400°-1200°C. and then cooled to room temperature. The composition of the metal chalcogenides thus obtained and the interplanar spacings (Å) of the main diffraction lines in the powder X-ray diffraction pattern of the chalcogenides are shown in Table 1.
TABLE 1
______________________________________
Sam- Interplanar Spacing of
ple Composition Main Diffraction Lines
No. X.sub.x
Y.sub.y Z.sub.z
(Å)
______________________________________
1 Bi Ti S.sub.3
11.3 5.65 3.77 2.83 2.26
2 Bi V S.sub.3
11.3 5.64 3.76 2.82 2.26
3 Bi Nb S.sub.3
11.5 5.75 3.83 2.88 2.29
4 Bi Ta S.sub.3
11.6 5.77 3.85 2.89 2.31
5 Bi Ti Se.sub.3
11.9 5.95 3.95 2.96 2.37
6 Bi V Se.sub.3
11.9 5.95 3.97 2.97 2.38
7 Bi Nb Se.sub.3
12.1 6.05 4.03 3.02 2.42
8 Bi Ta Se.sub.3
12.1 6.06 4.04 3.04 2.43
9 Sb Ta S.sub.3
11.5 5.75 3.83 2.88 2.30
10 Bi Ti.sub.0.5 Nb.sub.0.5
S.sub.3
11.5 5.72 3.81 2.85 2.28
11 Bi V.sub.0.5 Nb.sub.0.5
S.sub.3
11.6 5.78 3.83 2.87 2.30
12 Bi Nb.sub.0.5 Ta.sub.0.5
S.sub.3
-- 5.79 3.85 2.89 2.31
______________________________________
Multi-element metal chalcogenides having the compositions of the group (2) were prepared in the same manner as that in Example 1. The composition of the metal chalcogenides thus obtained and the interplanar spacings (Å)of the main diffraction lines in the powder X-ray diffraction pattern of the chalcogenides are shown in Table 2.
TABLE 2
__________________________________________________________________________
Sam- Interplanar Spacing of
ple
Composition Main Diffraction Lines
No.
X.sub.x
Y.sub.y
Z.sub.z
(Å)
__________________________________________________________________________
13 Bi Ti.sub.2
S.sub.5
17.0
8.51
5.65
4.23
3.39
2.83
14 Bi V.sub.2
S.sub.5
-- -- 5.65
4.23
3.39
2.82
15 Bi Nb.sub.2
S.sub.5
-- -- 5.76
4.36
3.47
2.90
16 Bi Ta.sub.2
S.sub.5
-- 8.76
5.83
4.38
3.51
--
17 Bi Nb.sub.2
Se.sub.5
-- -- 6.16
4.58
3.68
3.06
18 Bi TiV S.sub.5
-- -- 5.65
4.23
3.39
2.82
19 Bi VNb S.sub.5
-- -- 5.71
4.30
3.43
2.86
20 Bi NbTa
S.sub.5
-- -- 5.80
4.37
3.49
--
21 Sb Ta.sub.2
S.sub.5
-- 8.75
5.82
4.37
3.50
--
22 Bi.sub.0.5 Sb.sub.0.5
Ta.sub.2
S.sub.3
-- 8.76
5.83
4.38
3.51
--
__________________________________________________________________________
Multi-element metal chalcogenides having the compositions of the group (3) were prepared in the same manner as that in Example 1. The composition of the metal chalcogenides thus obtained and the interplanar spacings (Å)of the main diffraction lines in the powder X-ray diffraction pattern of the chalcogenides are shown in Table 3.
TABLE 3
______________________________________
Sam- Interplanar-Spacing of
ple Composition Main Diffraction Lines
No. X.sub.x
Y.sub.y Z.sub.z
(Å)
______________________________________
23 Pb V S.sub.3
11.9 5.93 3.95 2.96 2.37
24 Sn V S.sub.3
-- 5.90 -- 2.95 --
25 Sn Ti S.sub.3
11.8 5.83 3.89 2.91 2.33
26 Pb Ti.sub.0.1 V.sub.0.9
S.sub.3
11.9 5.92 3.94 2.96 2.37
27 Pb Ti.sub.0.2 V.sub.0.8
S.sub.3
11.8 5.91 3.94 2.96 2.36
28 Pb Ti.sub.0.8 V.sub.0.2
S.sub.3
11.9 5.89 3.92 2.94 2.35
29 Pb Ti.sub.0.9 V.sub.0.1
S.sub.3
11.7 5.87 3.91 2.94 2.35
______________________________________
Multi-element metal chalcogenides having the compositions of the group (4) were prepared in the same manner as that in Example 1. The composition of the metal chalcogenides thus obtained and the interplanar spacings (Å)of the main diffraction lines in the powder X-ray diffraction pattern of the chalcogenides are shown in Table 4.
TABLE 4
__________________________________________________________________________
Sam- Interplanar Spacing of
ple
Composition Main Diffraction Lines
No.
X.sub.x
Y.sub.y
Z.sub.z
(Å)
__________________________________________________________________________
30 Pb Ta.sub.2
S.sub.5
-- -- 6.03
4.51
3.62
2.57
31 Sn Nb.sub.2
S.sub.5
-- -- 5.95
4.44
3.55
--
32 Sn Ta.sub.2
S.sub.5
-- 8.94
5.91
4.46
3.58
2.56
33 Pb Nb.sub.2
Se.sub.5
-- -- 6.24
4.67
3.74
3.12
34 Pb Ta.sub.2
Se.sub.5
-- -- 6.29
4.72
3.77
3.13
35 Sn Nb.sub.2
Se.sub.5
-- -- 6.20
4.63
3.71
3.09
36 Sn Ta.sub.2
Se.sub.5
-- 9.42
6.29
4.70
3.76
3.12
37 Pb.sub.0.5 Sn.sub.0.5
Ta.sub.2
S.sub.5
-- -- 5.97
4.49
3.60
2.57
38 Pb NbTa
S.sub.5
-- -- 6.01
4.50
3.61
--
39 Sn NbTa
S.sub.5
-- -- 5.93
4.45
3.57
--
__________________________________________________________________________
Multi-element metal chalcogenides having the compositions of the group (5) were prepared in the same manner as that in Example 1. The composition of the metal chalcogenides thus obtained and the interplanar spacings (Å)of the main diffraction lines in the powder X-ray diffraction pattern of the chalcogenides are shown in Table 5.
TABLE 5
______________________________________
Sam- Interplanar Spacing of
ple Composition Main Diffraction Lines
No. X.sub.(1-a)x
X'.sub.ax
Y.sub.y
Z.sub.z
(Å)
______________________________________
40 Bi.sub.0.5
Pb.sub.0.5
Ti Se.sub.3
12.2 6.05 4.02 3.01 2.41
41 Bi.sub.0.5
Pb.sub.0.5
V Se.sub.3
-- 6.11 4.02 3.02 2.41
42 Bi.sub.0.5
Pb.sub.0.5
Nb Se.sub.3
-- 6.16 4.10 3.06 2.46
43 Bi.sub.0.5
Pb.sub.0.5
Ta Se.sub.3
12.5 6.20 4.12 3.08 2.47
44 Bi.sub.0.5
Sn.sub.0.5
Ti Se.sub.3
-- 6.03 3.99 2.99 2.39
45 Bi.sub.0.5
Sn.sub.0.5
V Se.sub.3
-- 6.07 4.01 3.00 2.40
46 Bi.sub.0.5
Sn.sub.0.5
Nb Se.sub.3
-- 6.11 4.06 3.04 2.43
47 Bi.sub.0.5
Sn.sub.0.5
Ta Se.sub.3
12.3 6.16 4.08 3.06 2.44
48 Bi.sub.0.9
Pb.sub.0.1
V Se.sub.3
11.3 5.67 3.77 2.83 2.26
49 Bi.sub.0.8
Pb.sub.0.2
V Se.sub.3
11.4 5.65 3.78 2.84 2.27
50 Bi.sub.0.2
Pb.sub.0.8
V Se.sub.3
11.6 5.83 3.89 2.92 2.34
51 Bi.sub.0.1
Pb.sub.0.9
V Se.sub.3
11.8 5.89 3.92 2.94 2.35
______________________________________
Multi-element metal chalcogenides having the compositions of the group (6) were prepared in the same manner as that in Example 1. The composition of the metal chalcogenides thus obtained and the interplanar spacings (Å)of the main diffraction lines in the powder X-ray diffraction pattern of the chalcogenides are shown in Table 6.
TABLE 6
______________________________________
Sam- Interplanar Spacing of
ple Composition Main Diffraction Lines
No. X.sub.(1-a)x
X'.sub.ax
Y.sub.y
Z.sub.z
(Å)
______________________________________
52 Bi.sub.0.5
Pb.sub.0.5
Nb.sub.2
S.sub.5
-- 5.88 4.43 3.53 2.95
53 Bi.sub.0.5
Sn.sub.0.5
Nb.sub.2
S.sub.5
-- 5.85 4.40 3.51 --
54 Bi.sub.0.5
Pb.sub.0.5
Ta.sub.2
S.sub.5
-- 5.93 4.45 3.57 --
55 Bi.sub.0.5
Sn.sub.0.5
Ta.sub.2
S.sub.5
-- 5.87 4.42 3.55 --
56 Bi.sub.0.5
Pb.sub.0.5
Nb.sub.2
Se.sub.5
-- 6.20 4.63 3.71 --
57 Bi.sub.0.5
Sn.sub.0.5
Nb.sub.2
Se.sub.5
-- 6.18 4.61 3.70 --
______________________________________
Claims (3)
1. A chalcogenide having the following general formula (I):
X.sub.(1-a)x X'.sub.ax Y.sub.y Z.sub.z (I)
wherein x stands for at least one element selected from Bi, Sb and As, X'stands for at least one element selected from Pb, Sn and Ge, Y stands for at least one element selected from Ti, V, Nb and Ta, Z stands for at least one element selected from S, Se and Te, a is a number of 0.01-0.99, x is a number of 0.8-1.2, y is a number of 0.8-1.2 and z is a number of 2.4-3.6.
2. A chalcogenide having the following general formula (I):
X.sub.(1-a)x X'.sub.ax Y.sub.y Z.sub.z (I)
wherein x stands for at least one element selected from Bi, Sb and As, X' stands for at least one element selected from Pb, Sn and Ge, Y stands for at least one element selected from Ti, V, Nb and Ta, Z stands for at least one element selected from S, Se and Te, a is a number of 0.1, x is a number of 0.8-1.2, y is a number of 1.6-2.4 and z is a number of 4.0-6.0.
3. A chalcogenide in accordance with claim 1 wherein a is 0.1-0.9.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63303817A JPH02149406A (en) | 1988-11-30 | 1988-11-30 | Multicomponent metal chalcogenide |
| JP63-303817 | 1988-11-30 | ||
| JP1997789A JPH02199006A (en) | 1989-01-30 | 1989-01-30 | Multielement-based metal chalocogenide having 1/2/5 composition |
| JP1-19977 | 1989-01-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US5051204A true US5051204A (en) | 1991-09-24 |
Family
ID=26356864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US07/446,548 Expired - Fee Related US5051204A (en) | 1988-11-30 | 1989-11-28 | Multi-element metal chalocogenide |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5051204A (en) |
| EP (1) | EP0371780B1 (en) |
| DE (1) | DE68908108T2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5108658A (en) * | 1991-01-24 | 1992-04-28 | Amoco Corporation | Light metal oxide-based amorphous conductor |
| US5207950A (en) * | 1989-03-16 | 1993-05-04 | Ercon, Inc. | Polymer composition containing chlorided conductive particles |
| US5236691A (en) * | 1991-03-08 | 1993-08-17 | Iowa State University Research Foundation, Inc. | Ternary metal-rich sulfide with a layered structure |
| US5531936A (en) * | 1994-08-31 | 1996-07-02 | Board Of Trustees Operating Michigan State University | Alkali metal quaternary chalcogenides and process for the preparation thereof |
| US6013204A (en) * | 1997-03-28 | 2000-01-11 | Board Of Trustees Operating Michigan State University | Alkali metal chalcogenides of bismuth alone or with antimony |
| US20050263708A1 (en) * | 2004-05-28 | 2005-12-01 | Gibson Gary A | Low-energy charged particle detetor |
| US20120219797A1 (en) * | 2009-08-06 | 2012-08-30 | Mitsui Mining & Smelting Co., Ltd. | Semiconductor Powder and Method for Producing the Same |
| US9767936B2 (en) | 2014-06-27 | 2017-09-19 | Samsung Electronics Co., Ltd. | Electrically conductive thin films |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110589782B (en) * | 2019-10-22 | 2021-06-18 | 中国人民解放军国防科技大学 | Vanadium diselenide two-dimensional material and synthesis and application thereof |
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- 1989-11-29 EP EP89312411A patent/EP0371780B1/en not_active Expired - Lifetime
- 1989-11-29 DE DE89312411T patent/DE68908108T2/en not_active Expired - Fee Related
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5207950A (en) * | 1989-03-16 | 1993-05-04 | Ercon, Inc. | Polymer composition containing chlorided conductive particles |
| US5108658A (en) * | 1991-01-24 | 1992-04-28 | Amoco Corporation | Light metal oxide-based amorphous conductor |
| US5236691A (en) * | 1991-03-08 | 1993-08-17 | Iowa State University Research Foundation, Inc. | Ternary metal-rich sulfide with a layered structure |
| US5531936A (en) * | 1994-08-31 | 1996-07-02 | Board Of Trustees Operating Michigan State University | Alkali metal quaternary chalcogenides and process for the preparation thereof |
| US5614128A (en) * | 1994-08-31 | 1997-03-25 | Board Of Trustees Operating Michigan State University | Alkali metal quaternary chalcogenides and process for the preparation thereof |
| US5618471A (en) * | 1994-08-31 | 1997-04-08 | Board Of Trustees Operating Michigan State University | Alkali metal quaternary chalcogenides and process for the preparation thereof |
| US6013204A (en) * | 1997-03-28 | 2000-01-11 | Board Of Trustees Operating Michigan State University | Alkali metal chalcogenides of bismuth alone or with antimony |
| US20050263708A1 (en) * | 2004-05-28 | 2005-12-01 | Gibson Gary A | Low-energy charged particle detetor |
| US7148485B2 (en) * | 2004-05-28 | 2006-12-12 | Hewlett-Packard Development Company, L.P. | Low-energy charged particle detector |
| US20120219797A1 (en) * | 2009-08-06 | 2012-08-30 | Mitsui Mining & Smelting Co., Ltd. | Semiconductor Powder and Method for Producing the Same |
| US9767936B2 (en) | 2014-06-27 | 2017-09-19 | Samsung Electronics Co., Ltd. | Electrically conductive thin films |
Also Published As
| Publication number | Publication date |
|---|---|
| DE68908108T2 (en) | 1994-03-10 |
| DE68908108D1 (en) | 1993-09-09 |
| EP0371780B1 (en) | 1993-08-04 |
| EP0371780A1 (en) | 1990-06-06 |
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