US4546367A - Lateral bidirectional notch FET with extended gate insulator - Google Patents

Lateral bidirectional notch FET with extended gate insulator Download PDF

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US4546367A
US4546367A US06/390,473 US39047382A US4546367A US 4546367 A US4546367 A US 4546367A US 39047382 A US39047382 A US 39047382A US 4546367 A US4546367 A US 4546367A
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notch
region
drift region
regions
channel
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Herman P. Schutten
Robert W. Lade
James A. Benjamin
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Eaton Corp
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Eaton Corp
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Priority to EP83303211A priority patent/EP0097442A3/fr
Priority to CA000430160A priority patent/CA1194242A/fr
Priority to JP58111782A priority patent/JPS595673A/ja
Priority to US06/734,031 priority patent/US4612465A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0289—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2

Definitions

  • the invention relates to power switching semiconductors, and more particularly to power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and the like.
  • MOSFETs Metal Oxide Semiconductor Field Effect Transistors
  • the present invention evolved from efforts to develop a solid state device for high power switching applications to replace the low current circuit breaker or contactor, though the invention is of course not limited thereto. Performance requirements for such a device are demanding, and even modest specifications might include a 400 volt blocking capability with a corresponding ON state resistance of 0.05 ohms and an AC current rating 20 amps rms. Further, the system should be capable of interrupting a fault current of 5,000 amps without destroying itself. Additionally, manufacturing cost should be less than or equal to the circuit breaker or contactor cost.
  • High power switching in solid state devices has evolved over the last 30 years from the early milliwatt devices to the present kilowatt "hockey puck" thyristor devices.
  • Device processing has evolved from the early restrictive alloy/rate grown devices to planar and MOS VLSI structures, bringing the blocking voltages of switches from the 10 volt level of the 1950's to the kilovolt range today. Even with these great strides, however, the problem of developing a semiconductor device to replace the low current circuit breaker or contactor has remained unsolved.
  • the first two candidates are the thyristor and the bipolar transistor.
  • the thyristor is capable of blocking a high reverse voltage, it can be characterized in the forward ON state by a fixed voltage source (one junction drop) and a resistance with a negative temperature coefficient, i.e. resistance decreases with increasing temperature.
  • the bipolar transistor can be characterized in the forward ON state simply as a resistance with a negative temperature coefficient. In each case, it is extremely difficult to accommodate large current ratings through the paralleling of bipolar devices due to the effect of "current hogging". If a number of these devices are paralleled, and if one unit draws slightly more current than the others, it will heat up and its resistance will be reduced. This results in a still larger share of the current, further heating, etc.
  • the third candidate, the field effect transistor (FET) is exclusively a majority carrier device. Its resistance is related to temperature through the electron mobility. Its resistance has a positive temperature coefficient, namely the resistance is proportional to T 3/2 . Since the electron mobility is 2.5 times greater than the hole mobility in silicon, the n channel device leads to lower ON state resistance. Further, since MOS devices give conductivity enhancement in the ON state, these devices are generally more conductive than their junction depletion-mode counterparts (JFET). Additionally, since minimal channel length (for low ON state resistance) and high packing densities are desirable, the vertical power MOSFET presently is leading all others in the power switching field.
  • JFET junction depletion-mode counterparts
  • the present invention provides lateral power FET structure which is bidirectional, i.e. current can flow in either direction when the device is in the ON state, whereby to afford AC application.
  • a notch gate structure is provided to afford increased OFF state voltage blocking capability, including non-floating gate implementations.
  • a notch extends downwardly from a top major surface to separate right and left source regions and right and left channel regions, and direct the drift region current path between the channels around the bottom of the notch.
  • Gate electrode means are provided in the notch proximate the channels for controlling bidirectional conduction.
  • Blocking voltage is increased without increasing the lateral dimension of the drift region.
  • the notch has a lower insulative portion extending downwardly into the drift region to a depth substantially below the gate electrode means in the notch.
  • the structure of the invention involves easy processing steps.
  • the structure is suited to manufacture in a repetitive multi-cell matrix array, affording plural FET integrated structure.
  • FIGS. 1 through 11 show prior art.
  • FIG. 1 is a schematic cross-sectional view of a VMOS FET.
  • FIG. 2 is a schematic cross-sectional view of a DMOS FET.
  • FIG. 3 is a schematic cross-sectional view of a VMOS FET with a polysilicon gate.
  • FIG. 4 is a schematic cross-sectional view of a DMOS FET with a polysilicon gate (HEXFET).
  • FIG. 5 shows a top view of the structure of FIG. 4, illustrating the HEX outline.
  • FIG. 6 is a schematic cross-sectional view of a SIPMOS FET.
  • FIGS. 7 through 10 schematically illustrate the process steps yielding the structure of FIG. 6.
  • FIG. 11 is a schematic cross-sectional view of a lateral MOSFET.
  • FIG. 12 is a schematic sectional view illustrating the initial process steps in providing FET structure constructed in accordance with the invention.
  • FIG. 13 is a schematic sectional view of completed FET structure constructed in accordance with the invention.
  • FIGS. 14 through 21 show the preferred processing and structure of the invention.
  • MOSFETs can generally be classified into two groupings according to the principle orientation of current flow, namely vertical and lateral.
  • vertical units there are two predominant geometries, planar (HEXFET, TMOS, SIPMOS, etc.), and non-planar (VMOS, UMOS, etc.).
  • planar HEXFET, TMOS, SIPMOS, etc.
  • VMOS non-planar
  • UMOS UMOS
  • FIG. 1 A cross-sectional view of a typical non-planar vertical device is illustrated in FIG. 1, showing a VMOS structure 2.
  • the starting material is an n+ silicon wafer 4 with an n- epitaxial layer 6. Successive p and n+ diffusions are carried out, yielding layers 8 and 10.
  • a groove is anisotropically etched to yield V-groove 12.
  • An insulating oxide layer 14 is formed in the groove, followed by deposition of gate metalization 16.
  • Source metalization 18 is deposited on the top major surface, and drain electrode metalization 20 is deposited on the bottom major surface.
  • FET channel 22 is through p region 8 along the edge of the V-groove.
  • the active channel length is extremely small and is determined by the difference in depth between the n+ source diffusion 10 and the p body diffusion 8.
  • the technology in diffusion is sufficiently well advanced so that this dimension can be very tightly controlled.
  • the channel resistance can be closely held to a maximum specification.
  • VMOS or UMOS truncated VMOS design
  • Notched grooves as narrow as 1 micron are provided by anisotropic etching, IEEE Transactions Electron Device, Volume ED-25, #10, October 1978, and "UMOS Transistors on (110) Silicon", Ammar and Rogers, Transactions IEEE, ED-27, May 1980, pages 907-914.
  • N+ starting material 26 has an n- epilayer 28 into which p and n+ diffusions form regions 30 and 32.
  • FET channel region 34 is formed at the top major surface over which insulating layer 36 is deposited, followed by gate metalization 38.
  • gate electrode 38 Upon application of a positive voltage on gate electrode 38 relative to source electrode 40, electrons in p type region 30 are attracted towards the gate and congregate at the top major surface to thus invert the conductivity type along channel region 34 to n type. Current thus flows from drain electrode 42 through regions 26 and 28 and then through channel region 34 and then through source region 32 to source electrode 40, as shown by dashed line.
  • the p body and the n+ source diffusions are carried out through the same opening in a silicon dioxide covering layer.
  • the active channel region in DMOS FETs is also controlled by the difference in the diffusion depths. Lateral penetration is about 80% that of the vertical depth.
  • Stability of the operating specifications in MOS devices involves control of their threshold voltages, i.e. the value of the gate voltage required to produce the onset of drain to source conduction. This parameter is strongly influenced by the surface conditions of the silicon just over the channel region and the purity of the silicon dioxide, SiO 2 such as layers 14, FIG. 1, and 36, FIG. 2. During the thermal growth of the oxide, hydrogen chloride is introduced into the system to act as a gettering agent, thus providing fairly pure material.
  • a particularly troublesome element is sodium because any Na+ ions in the oxide tend to reduce the threshold of n channel devices, and an overabundance of them can prevent turn-off altogether. If aluminum gate metal is placed directly onto the gate oxide, these ions, if present in the aluminum, can drift into the silicon dioxide and degrade the device performance. This is true for VMOS, UMOS, and DMOS devices.
  • FIGS. 3 and 4 show a top view of the structure of FIG. 4, illustrating the HEX outline. Gate electrode connections are attached along the edge of the wafer.
  • the VMOS structure is classified as a vertical non-planar unit.
  • the HEXFET structure is a vertical planar unit.
  • n- epitaxial layer 44 is grown on an n+ substrate 46, FIG. 7.
  • the thickness and resistivity of epilayer 44 is determined by the breakover voltage versus ON state resistance compromise.
  • a p+ layer 48 (boron) is driven into the epilayer approximately 2 to 3 microns.
  • the wafer is then stripped of old silicon dioxide and a new extremely clean 50 to 60 nanometer silicon dioxide layer is grown, usually in an environment of hydrogen chloride.
  • Polycrystalline silicon is then deposited on top of the wafer using the LPCVD (low pressure chemical vapor deposition) method.
  • n+ diffusion into the entire polysilicon layer is then performed to provide for the gettering action of the phosphorous against sodium ions and provide a means to reduce the resistivity of the gate material, although it will still be a factor of 3,000 higher than aluminum.
  • the entire surface of the polysilicon-phosphorous (Si/P) layer is bombarded by ion implantation in order to intentionally damage the top surface.
  • Photoresist material is placed on the Si/P, developed and etched. Since the top etches faster than the bottom, due to the damage, the taper shown in FIG. 8 results. By using this tapered gate arrangement, the subsequent implants are more uniform up to the silicon gate oxide surface.
  • An n+ source region 54 is now ion implanted through the same opening in the Si/P gate grid structure. The impurity density is selected such that p+ region 48 is greater than n+ source region 54, and the depth of n+ source region 54 is typically 0.4 microns.
  • a heavy low temperature oxide layer 56, FIG. 6, is applied, followed by a pre-ohmic and ohmic aluminum step yielding drain electrode 58 and source electrode 60.
  • FIG. 11 An example of the other general class of MOSFETs, the lateral type, is shown in FIG. 11.
  • Lateral MOSFET 62 has a substrate including an n- epitaxial layer 64 into which are diffused p region 66, n+ source region 68 and n+ drain region 70.
  • p region 66 Upon application of a positive voltage on gate electrode 72 relative to source electrode 74, electrons in p region 66 are attracted to the top surface of the substrate to invert the conductivity type along channel region 76 to n type, whereby electrons flow from source 68 through channel 76 through drift region 62 to drain 70, and current thus flows from drain electrode 78 through channel 76 to source electrode 74.
  • the principal advantage of lateral device 62 is ease of implementation in integrated geometries where all leads are accessible.
  • the lateral MOSFET 62 of FIG. 11 is unidirectional.
  • Device 62 is subject to the above noted tradeoff between lateral length of the drift region 80 (i.e. the distance between regions 76 and 70) versus the blocking voltage.
  • Blocking voltage can be increased by making drift region 80 longer, but this in turn undesirably increases the ON state resistance.
  • each of the above references is to enhancement mode devices. Since the electron mobility is about 2.5 times greater than the hole mobility in silicon, the most common channel is n type. The ON state channel resistance is determined by the degree to which one can enhance the initial conductivity of the semiconductor. Thus larger gate voltages generally produce lower ON state resistances. If the devices were constructed as depletion mode units, the ON state resistance occurring at zero gate signal would be fixed by the conductivity of the starting material. Little if any reduction in ON state resistance could be effected by application of gate voltage. Since the starting resistivity must be high in order to sustain high blocking voltages in the OFF state, the ON state resistance of depletion mode devices currently being fabricated is considered too large to be a serious contender in power FET development. From this perspective, since all current JFETs are depletion mode devices, JFET configurations have not been seriously considered for power switching applications.
  • each device is unidirectional in that only one junction drop separates drain and source when (for the n channel devices shown) the drain is negative with respect to the source. In many applications, these devices can be effectively employed. But if AC line voltage is to be the drain-source driving function, then a bidirectional design becomes mandatory. Again, inspection of the device geometries in FIGS. 1 through 11 shows that the reason for the unidirectional design stems from the use of the device as a three terminal element, i.e. both the drain and the gate voltages are referenced to the common source point. It is necessary that the source electrode be in contact with the n+ source region and also with the p body region (to provide the gate return contact). Thus, the blocking action of the pn epijunction is negated.
  • the present invention evolved from efforts to provide bidirectionality in a power FET without having to overcome these immediately above noted difficulties.
  • the invention has broad application, however, to various lateral FETs where it is desired to increase voltage blocking capability without increasing lateral dimensions.
  • the disclosed preferred embodiment provides in combination a simple yet effective MOSFET structure avoiding the noted difficulties while providing bidirectional current flow with high voltage blocking capability in minimum lateral dimensions.
  • FIGS. 12 and 13 schematically show lateral bidirectional power FET structure constructed in accordance with the invention.
  • FET structure 102 includes a substrate 104 of one conductivity type having a top major surface 106.
  • substrate 104 is an n- epitaxial layer grown on a base layer of semiconductor material such as p layer 108.
  • a p layer 110 is diffused into the substrate from top major surface 106 to a predetermined depth forming a first top layer.
  • a second top layer 112 is formed in first top layer 110 by diffusion from top major surface 106 to a given depth.
  • a plurality of laterally spaced second top layers 112, 114, 116 and so on, are provided by n+ regions.
  • a plurality of notches 118, 120, 122 and so on are formed in the substrate from top major surface 106 through respective n+ regions 112, 114, 116 and so on and through top layer 110 into substrate region 104.
  • These notches may be anisotropically etched, as known in the art: C. Hu, "A Parametric Study of Power MOSFETs", IEEE Electron Device Conference, paper CH 1461-3/79, 0000-0385; IEEE Transactions Electron Devices, Volume ed-25, #10, October 1978; and Ammar and Rogers, "UMOS Transistors on Silicon", Transactions IEEE, ed-27, pages 907-914, May 1980.
  • the notches may be formed by a porous silicon region in accordance with the known anodization technique of passing a fixed current through the localized region in the presence of concentrated hydrogen floride to create a structural change in the silicon which remains single crystalline with the substrate but becomes porous.
  • the substrate is subjected to an oxidizing atmosphere forming oxide layers 124, 126, 128 and so on.
  • the remainder of the notch is preferably filled with tungsten disilicide, which is a conductor and provides the gate electrode as shown at 132, 134, 136 and so on.
  • Notch 118 extends from top major surface 106 downwardly through second top layer 112 and first top layer 110 into substrate region 104. Notch 118 separates the second top layer 112 into first and second source regions 140 and 142 and extends therebetween. Notch 118 separates the first top layer 110 into first and second channel regions 144 and 146 and extends therebetween. The substrate region 104 around the notch forms a drift region 148 of the substrate.
  • Main electrode metallization 150 is deposited on top major surface 106 to ohmically contact source region 140 and the second top layer 110 common to channel region 144.
  • Another main electrode metallization 152 is deposited on top major surface 106 to ohmically contact source region 142 and the first top layer 110.
  • Portion 156 thus becomes negative relative to gate 132, whereby positive gate 132 attracts electrons into channel region 146 to invert the conductivity type thereof to n type, and hence render channel 146 conductive. Forward biased pn junction 154 thus conducts only momentarily until the second channel 146 turns on.
  • the main current path through FET 102 is from main electrode 152 through source region 142, downwardly through vertical channel region 146 along the right side of notch 118, then further downwardly into drift region 148 along the right side of the notch, then around the bottom of notch 118, then upwardly along the left side of notch 118 in drift region 148 of substrate 104, then upwardly through vertical channel region 144 along the left side of notch 118, then through source region 140 to main electrode 150.
  • the structure is bilateral, and thus current may also flow from main electrode 150 to main electrode 152 when gate 132 is positive with respect to source 142. Electrons in p layer 110 are attracted into channel region 146 by gate 132 to thus invert channel region 146 to n type and hence allow electron flow from n+ source region 142 through channel 146 into drift region 148 in substrate 104. If main electrode 150 is positive with respect to main electrode 152, current then flows from p layer 110 momentarily across forward biased pn junction 158 until channel 144 turns on. The main current path is from main electrode 150, through source 140, through channel 144, through drift region 148, through channel 146, through source 142 to main electrode 152. Main electrode 152 thus serves as an electron current source when a negative voltage is applied thereto relative to the voltage on main electrode 150, and serves as an anode when a positive voltage is applied thereto relative to the voltage on main electrode 150.
  • gate electrode 132 The application of electrical gate potential to gate electrode 132 enables the latter to produce electric fields of sufficient intensity to invert the conductivity type in the first and second channel regions 144 and 146.
  • electric current can flow in a respective corresponding direction between them, under control of the electrical gate potential of the gate electrode means 132.
  • the current flow between spaced apart regions 140 and 142 is controllable by controlling the electric fields in channel regions 144 and 146, which in turn are controllable by controlling the electric potential on the gate electrode means 132.
  • channel regions 144 and 146 are p type, and the device is in a blocking OFF state. Current from main electrode 150 to main electrode 152 is blocked by junction 154. Current flow in the other direction from main electrode 152 to main electrode 150 is blocked by junction 158.
  • Bidirectional FET 102 may be used to control AC power.
  • FIG. 13 schematically shows a load 160 and a source of AC power 162 connected across main electrodes 150 and 152.
  • Gate electrode 132 is connected by a gate terminal 164 to a source of gate potential 166 through switch means 168.
  • switch 168 In the ON state of FET 102, switch 168 is in an upward position such that a given polarity gate potential is applied to gate electrode 132 from source 166.
  • main electrode 152 is positive with respect to main electrode 150, as driven by AC source 162
  • gate electrode 132 is positive with respect to source region 140 and main electrode 150, connected to p layer 110.
  • channel 144 is inverted to n type and conduction occurs, i.e., current flows from positive main electrode 152, through source region 142, through channel 146, through drift region 148 around the bottom of notch 118 in substrate 104, through channel 144, through source 140 to negative main electrode 150 and through load 160.
  • main electrode 150 is positive with respect to main electrode 152
  • gate electrode 132 is positive with respect to source region 142 and p layer 110 connected to negative main electrode 152. Conduction is thus enabled through channel 146, and current flows from positive main electrode 150 through source 140, through channel 144, through drift region 148 around the bottom of notch 118 in substrate 104, through channel 146, to source 142 and main electrode 152.
  • gate terminal 164 is referenced to the same potential level as one of the main electrodes in the OFF state of FET 102. In the leftward position of switch 168, gate terminal 164 is connected through reverse blocking diode 170 to main electrode 150.
  • N+ regions or top layers 114 and 116, FIG. 12, are likewise split and separated into laterally spaced first and second source regions along top major surface 106 by respective notches 120 and 122.
  • Main electrode metallizations are provided comparably to that described, and connected in series in the AC load line, or in parallel as shown in FIG. 13.
  • Gate electrodes 134 and 136 are connected in parallel with gate electrode 132 to gate terminal 164.
  • Main electrode 152 provides the source electrode for the FET to the left around notch 118, and also provides the source electrode for the FET to the right around notch 120.
  • Main electrode 151 provides the drain electrode for the FET around notch 120, and also provides the drain electrode for the FET around notch 122.
  • electrodes 152 and 151 are reversed, i.e. electrode 152 is the drain for its left and right FETs around respective notches 118 and 120, and electrode 151 is the source for its left and right FETs around respective notches 120 and 122.
  • Alternate electrodes 150, 151 and so on are thus connected to one side of the AC source, and the other alternate electrodes 152, 153 and so on are connected to the other side of the AC source.
  • the depth of the p layer 110 below top major surface 106 is about 3 microns, and the depth of the n+ layers 112, 114, and 116 is about 1 micron.
  • the depth of notches 118, 120, 122 and so on below top major surface 106 is about 15 microns, which affords a depletion region path length of 30 microns.
  • a lateral bidirectional notched power FET including: a first source region 140 of one conductivity type; a first channel region 144 of opposite conductivity type forming a junction 113 with first source region 112; a drift region 148 of the one conductivity type forming another junction 158 with the first channel region 144; a second channel region 146 of the opposite conductivity type forming a junction 154 with drift region 148; a second source region 142 of the one conductivity type forming a junction 143 with second channel region 146; a notch 118 extending between and separating the first and second source regions 140 and 142 and the first and second channel regions 144 and 146, and extending into drift region 148 in substrate 104; insulated gate means 132 and 124 in notch 118 proximate the first and second channels 144 and 146 and adapted for application of electrical potential for producing electric fields of sufficient intensity to invert the conductivity type in the first and second channel regions 144 and 146; whereby upon application of voltage of either
  • FIGS. 14 through 21 show the preferred processing and structure of the invention.
  • p type epitaxial layer 204 is provided with boron at a density of about 1 ⁇ 10 17 donor atoms per cubic centimeter, and having a depth of about 3 microns.
  • a layer of silicon dioxide SiO 2 is then grown on the top surface 206, followed by masking and exposing to define p areas 208 and 210, FIG.
  • Regions 218 and 220 are the silicon dioxide areas remaining after the masking and exposure etching. During the arsenic diffusion, another silicon dioxide layer 222 forms over the top surface.
  • a silicon nitrite Si 4 N 3 layer 224 is deposited to a thickness of about 4 microns, to provide a high quality insulating material and a mask definition material.
  • the silicon nitrite layer 224 is plasma etched down to top major surface 206, forming hole 226, FIG. 16, or the etch is performed down to level 230, FIG. 18.
  • a porous silicon region 228 is then formed by anodization in the presence of hydrogen floride as above. Contacts are placed on the top and bottom surfaces, and since silicon nitrite layer 224 is an insulator, current will only pass through the notch hole 226 to thus provide selective anodization through vertical region 228. A structural change is created in the silicon which remains single crystalline with substrate 202 but becomes porous. The depth of porous silicon region 228 below top major surface 206 is about 14 or 15 microns.
  • the notch is then etched down to level 230, FIG. 18, about 4 microns below top major surface 206.
  • the silicon nitrate layer 224 and oxide layers are removed by etching and the substrate is subjected to an oxidizing atmosphere such that the oxygen enters the pores in porous region 228 and rapidly oxidizes region 228, whereby region 228 is still single crystalline with substrate 202 but substantially nonconductive.
  • a silicon dioxide layer 232, FIG. 19, also remains.
  • the porous silicon region 228 oxidizes much faster than the growth of silicon dioxide layer 232, whereby to afford process control enabling gate oxide segments 234 and 236 along the vertical walls of the notch hole 226, FIG. 19.
  • Titanium disilicide TiSi 2 layer 238 is then deposited over the top surface by a sputtering process.
  • Alternatives are tungsten disilicide and tantalum disilicide. Sputtering is preferred in order to prevent shadowing, i.e. gaps below corners.
  • Layer 238 is then masked and etched, followed by low temperature silicon dioxide chemical vapor deposition, FIG. 20, providing insulating layers 240, 242, 244, and so on, and open areas 246, 248, and so on.
  • Aluminum metallization is then sputtered or deposited in the open areas 246 and 248, resulting in main electrodes 250 and 252, FIG. 21.
  • FIG. 21 shows the preferred structure of the invention.
  • a bidirectional lateral power FET is provided by: a first source region 214 of one conductivity type; a first channel regions 254 of opposite conductivity type forming a junction 256 with first source region 214; a drift region 258 of the one conductivity type forming another junction 260 with the first channel region 254; a second channel region 262 forming a junction 264 with drift region 258; a second source region 266 of the one conductivity type forming a junction 267 with the second channel region 262; a notch 268 extending between and separating the first and second source regions 214 and 266 and the first and second channel regions 254 and 262, and extending into drift region 258; and insulated gate means 238 in notch 268 proximate the first and second channels 254 and 262 and adapted for application of electrical potential for producing electric fields of sufficient intensity to invert the conductivity type in the first and second channels 254 and 262.
  • the contact structure of FIG. 21 provides a common main electrode for adjacent FETs. If main electrode 252 is positive with respect to main electrode 250, then electrode 252 provides the source contact for the left FET around the bottom of notch 268, and also provides the source contact for the FET to the right thereof around notch 276. Likewise, electrode 250 provides the drain contact for the FET to the right thereof around notch 268, and also provides the drain contact for the FET to the left thereof around notch 278.
  • the gate electrode 238 in FIG. 21 does not extend down too far into drift region 258 within insulator notch region 228. This prevents unwanted inducement of conduction channels in the OFF state, which in turn affords higher OFF state voltage blocking capability.
  • the OFF state if the voltage on main electrode 252 is positive with respect to main electrode 250, and if gate electrode 238 is referenced to electrode 250, then as the positive voltage on main electrode 252 rises higher, the potential in substrate 202 likewise rises positively with respect to gate electrode 238 because of the single forward junction drop across pn junction 264.
  • Gate electrode 238 thus becomes more negative relative to drift region 258 in substrate 202, and if the gate electrode extends down within insulative region 228, the gate electrode would attract holes toward the edges of insulative region 228 along the sides of notch 268. If the concentration of carrier holes along sides 270, 272 and 274 of the notch becomes great enough, then conductivity inversion to p type may occur along these sides. This inducement of conduction channels enables conduction from p region 280 through the induced p type conduction channel in drift region 258 around the notch then to p region 204.
  • the structure of the gate electrode means in FIG. 21 prevents unwanted inducement of conduction channels in the OFF state.
  • drift region current path length is further afforded by the increased drift region current path length.
  • the current path between the main electrodes extends from each source region downwardly through the channel regions and downwardly and around the bottom 272 of the notch. This increases the drift region current path length and affords higher OFF state voltage blocking capability without increasing the lateral dimension along the top major surface 206, whereby to afford a high density, high voltage bidirectional FET structure.

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
US06/390,473 1982-06-21 1982-06-21 Lateral bidirectional notch FET with extended gate insulator Expired - Fee Related US4546367A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US06/390,473 US4546367A (en) 1982-06-21 1982-06-21 Lateral bidirectional notch FET with extended gate insulator
EP83303211A EP0097442A3 (fr) 1982-06-21 1983-06-03 Transistor à effet de champ latéral bidirectionnel comportant une entaille
CA000430160A CA1194242A (fr) 1982-06-21 1983-06-10 Fet bidirectionnel lateral a sillon
JP58111782A JPS595673A (ja) 1982-06-21 1983-06-21 横型双方向性ノツチｆｅｔ
US06/734,031 US4612465A (en) 1982-06-21 1985-05-13 Lateral bidirectional notch FET with gates at non-common potentials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/390,473 US4546367A (en) 1982-06-21 1982-06-21 Lateral bidirectional notch FET with extended gate insulator

Related Child Applications (1)

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US06/734,031 Continuation-In-Part US4612465A (en) 1982-06-21 1985-05-13 Lateral bidirectional notch FET with gates at non-common potentials

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US (1) US4546367A (fr)
EP (1) EP0097442A3 (fr)
JP (1) JPS595673A (fr)
CA (1) CA1194242A (fr)

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US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US4769685A (en) * 1986-10-27 1988-09-06 General Motors Corporation Recessed-gate junction-MOS field effect transistor
US4830978A (en) * 1987-03-16 1989-05-16 Texas Instruments Incorporated Dram cell and method
US4851889A (en) * 1986-12-03 1989-07-25 Fuji Electric Co., Ltd. Insulated gate field effect transistor with vertical channel
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US4941030A (en) * 1985-02-05 1990-07-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
US4983535A (en) * 1981-10-15 1991-01-08 Siliconix Incorporated Vertical DMOS transistor fabrication process
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US5227653A (en) * 1991-08-07 1993-07-13 North American Philips Corp. Lateral trench-gate bipolar transistors
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5793064A (en) * 1996-09-24 1998-08-11 Allen Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor
US5852559A (en) * 1996-09-24 1998-12-22 Allen Bradley Company, Llc Power application circuits utilizing bidirectional insulated gate bipolar transistor
US5977569A (en) * 1996-09-24 1999-11-02 Allen-Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
US20030032248A1 (en) * 2001-08-10 2003-02-13 Christiana Yue Method of fabricating trench MIS device with graduated gate oxide layer
US20040038481A1 (en) * 2001-07-03 2004-02-26 Siliconix Incorporated Trench MOSFET having implanted drain-drift region and process for manufacturing the same
US20040121572A1 (en) * 2001-07-03 2004-06-24 Darwish Mohamed N. Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US20040166636A1 (en) * 2001-07-03 2004-08-26 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US20040227182A1 (en) * 2001-07-03 2004-11-18 Siliconix Incorporated Process for manufacturing trench MIS device having implanted drain-drift region and thick botton oxide
US20050179081A1 (en) * 2004-02-16 2005-08-18 Mutsumi Kitamura Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
WO2005093841A3 (fr) * 2004-03-27 2006-05-18 Koninkl Philips Electronics Nv Transistor a effet de champ de semi-conducteur d'oxyde de metal a tranchee
US20060118866A1 (en) * 2004-11-17 2006-06-08 Sanyo Electric Co., Ltd. Semiconductor device
US20070187695A1 (en) * 2006-01-17 2007-08-16 C/O Fuji Electric Holdings Co., Ltd. Semiconductor device and method of forming the same
US20070274110A1 (en) * 2006-05-29 2007-11-29 Fuji Electric Device Technology Co., Ltd Semiconductor device, battery protection circuit and battery pack
US7745289B2 (en) * 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US20120319199A1 (en) * 2011-06-20 2012-12-20 Maxpower Semiconductor, Inc. Trench Gated Power Device With Multiple Trench Width and its Fabrication Process
US20150084094A1 (en) * 2013-09-26 2015-03-26 Stmicroelectronics (Tours) Sas Scr component with temperature-stable characteristics
US11469136B2 (en) * 2018-08-20 2022-10-11 Stmicroelectronics S.R.L. Semiconductor structure with partially embedded insulation region and related method

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EP0205639A1 (fr) * 1985-06-25 1986-12-30 Eaton Corporation Transistor à effet de champ de puissance bidirectionnel avec écran référencé au substrat
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
EP0205637A1 (fr) * 1985-06-25 1986-12-30 Eaton Corporation Transistor à effet de champ de puissance bidirectionnel à piégeage de charges
EP0207178A1 (fr) * 1985-06-25 1987-01-07 Eaton Corporation Transistor à effet de champ de puissance bidirectionnel à conformation de champ
EP0207177A1 (fr) * 1985-06-25 1987-01-07 Eaton Corporation Transistor à effet de champ de puissance bidirectionnel, dont un canal est court-circuité lors de l'état bloqué
US4622569A (en) * 1984-06-08 1986-11-11 Eaton Corporation Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means
EP0164095A3 (fr) * 1984-06-08 1987-01-07 Eaton Corporation Transistor de puissance à effet de champ du type vertical, bidirectionnel et empilé
EP0205640A1 (fr) * 1985-06-25 1986-12-30 Eaton Corporation Transistor à effet de champ latéral bidirectionnel comportant une entaille et un écran de champ
EP0205635A1 (fr) * 1985-06-25 1986-12-30 Eaton Corporation Transistor à effet de champ de puissance bidirectionnel à état passant bipolaire
CN109037337A (zh) * 2018-06-28 2018-12-18 华为技术有限公司 一种功率半导体器件及制造方法

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Cited By (56)

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US4983535A (en) * 1981-10-15 1991-01-08 Siliconix Incorporated Vertical DMOS transistor fabrication process
US4941030A (en) * 1985-02-05 1990-07-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US4769685A (en) * 1986-10-27 1988-09-06 General Motors Corporation Recessed-gate junction-MOS field effect transistor
US4851889A (en) * 1986-12-03 1989-07-25 Fuji Electric Co., Ltd. Insulated gate field effect transistor with vertical channel
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
US4830978A (en) * 1987-03-16 1989-05-16 Texas Instruments Incorporated Dram cell and method
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US5227653A (en) * 1991-08-07 1993-07-13 North American Philips Corp. Lateral trench-gate bipolar transistors
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US6368920B1 (en) 1996-04-10 2002-04-09 Fairchild Semiconductor Corporation Trench MOS gate device
US5793064A (en) * 1996-09-24 1998-08-11 Allen Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor
US5852559A (en) * 1996-09-24 1998-12-22 Allen Bradley Company, Llc Power application circuits utilizing bidirectional insulated gate bipolar transistor
US5977569A (en) * 1996-09-24 1999-11-02 Allen-Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
US8710584B2 (en) 2000-08-16 2014-04-29 Fairchild Semiconductor Corporation FET device having ultra-low on-resistance and low gate charge
US8101484B2 (en) 2000-08-16 2012-01-24 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US7745289B2 (en) * 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US7033876B2 (en) 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7416947B2 (en) 2001-07-03 2008-08-26 Siliconix Incorporated Method of fabricating trench MIS device with thick oxide layer in bottom of trench
US20040166636A1 (en) * 2001-07-03 2004-08-26 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US20040227182A1 (en) * 2001-07-03 2004-11-18 Siliconix Incorporated Process for manufacturing trench MIS device having implanted drain-drift region and thick botton oxide
US20040038481A1 (en) * 2001-07-03 2004-02-26 Siliconix Incorporated Trench MOSFET having implanted drain-drift region and process for manufacturing the same
US7435650B2 (en) 2001-07-03 2008-10-14 Siliconix Incorporated Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide
US6764906B2 (en) 2001-07-03 2004-07-20 Siliconix Incorporated Method for making trench mosfet having implanted drain-drift region
US20050236665A1 (en) * 2001-07-03 2005-10-27 Darwish Mohamed N Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7009247B2 (en) 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US20040121572A1 (en) * 2001-07-03 2004-06-24 Darwish Mohamed N. Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7326995B2 (en) 2001-07-03 2008-02-05 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US20060121676A1 (en) * 2001-07-03 2006-06-08 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7291884B2 (en) 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US6903412B2 (en) 2001-08-10 2005-06-07 Siliconix Incorporated Trench MIS device with graduated gate oxide layer
US20030032248A1 (en) * 2001-08-10 2003-02-13 Christiana Yue Method of fabricating trench MIS device with graduated gate oxide layer
US20030030104A1 (en) * 2001-08-10 2003-02-13 Darwish Mohamed N. Trench MIS device with graduated gate oxide layer
US6875657B2 (en) 2001-08-10 2005-04-05 Siliconix Incorporated Method of fabricating trench MIS device with graduated gate oxide layer
US7902596B2 (en) 2004-02-16 2011-03-08 Fuji Electric Systems Co., Ltd. Bidirectional semiconductor device and a manufacturing method thereof
US20050179081A1 (en) * 2004-02-16 2005-08-18 Mutsumi Kitamura Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same
DE102004039402B4 (de) 2004-02-16 2018-09-20 Fuji Electric Co., Ltd. Bidirektionale Vorrichtung, Verfahren zur Herstellung derselben und Halbleitervorrichtung
US8084812B2 (en) 2004-02-16 2011-12-27 Fuji Electric Co., Ltd. Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same
US20100044749A1 (en) * 2004-02-16 2010-02-25 Fuji Electric Device Technology Co., Ltd. Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same
WO2005093841A3 (fr) * 2004-03-27 2006-05-18 Koninkl Philips Electronics Nv Transistor a effet de champ de semi-conducteur d'oxyde de metal a tranchee
US20060118866A1 (en) * 2004-11-17 2006-06-08 Sanyo Electric Co., Ltd. Semiconductor device
EP1659635A3 (fr) * 2004-11-17 2008-03-19 Sanyo Electric Co., Ltd. Dispositif semi-conducteur de type MOS bidirectionnel
US20100019250A1 (en) * 2006-01-17 2010-01-28 Fuji Electric Holdings Co., Ltd. Semiconductor device and method of forming the same
US8178920B2 (en) 2006-01-17 2012-05-15 Fuji Electric Co., Ltd. Semiconductor device and method of forming the same
US20070187695A1 (en) * 2006-01-17 2007-08-16 C/O Fuji Electric Holdings Co., Ltd. Semiconductor device and method of forming the same
US7800167B2 (en) 2006-05-29 2010-09-21 Fuji Electric Systems Co., Ltd. Semiconductor device, battery protection circuit and battery pack
US20070274110A1 (en) * 2006-05-29 2007-11-29 Fuji Electric Device Technology Co., Ltd Semiconductor device, battery protection circuit and battery pack
US8378418B2 (en) 2006-05-29 2013-02-19 Fuji Electric Co., Ltd. Semiconductor device, battery protection circuit and battery pack
US20100330398A1 (en) * 2006-05-29 2010-12-30 Fuji Electric Systems Co., Ltd. Semiconductor device, battery protection circuit and battery pack
US20120319199A1 (en) * 2011-06-20 2012-12-20 Maxpower Semiconductor, Inc. Trench Gated Power Device With Multiple Trench Width and its Fabrication Process
US8680607B2 (en) * 2011-06-20 2014-03-25 Maxpower Semiconductor, Inc. Trench gated power device with multiple trench width and its fabrication process
US20150084094A1 (en) * 2013-09-26 2015-03-26 Stmicroelectronics (Tours) Sas Scr component with temperature-stable characteristics
US9070738B2 (en) * 2013-09-26 2015-06-30 Stmicroelectronics (Tours) Sas SCR component with temperature-stable characteristics
US11469136B2 (en) * 2018-08-20 2022-10-11 Stmicroelectronics S.R.L. Semiconductor structure with partially embedded insulation region and related method

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EP0097442A2 (fr) 1984-01-04
JPS595673A (ja) 1984-01-12
EP0097442A3 (fr) 1986-04-30
CA1194242A (fr) 1985-09-24

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