US4130855A - Passive microcircuit - Google Patents

Passive microcircuit Download PDF

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Publication number
US4130855A
US4130855A US05/664,171 US66417176A US4130855A US 4130855 A US4130855 A US 4130855A US 66417176 A US66417176 A US 66417176A US 4130855 A US4130855 A US 4130855A
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US
United States
Prior art keywords
microcircuit
passive
dielectric layer
metal substrate
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US05/664,171
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English (en)
Inventor
Gennady G. Smolko
Gennady F. Vasiliev
Nordari M. Chikovani
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Individual
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit

Definitions

  • This invention relates to microelectronics and, in particular, to passive microcircuits.
  • Passive microcircuits can be used in manufacturing hybrid integrated microcircuits for various purposes. In particular, it is most effective in microcircuits operating under strong vibration, mechanical overload and high temperatures.
  • Said components in known circuits on metal substrates are made from different materials, but, when they are made from the substrate material, a sublayer of another metal or alloy is used.
  • a layer of metal is vacuumsputtered upon pyroceramic or silicon, as e.g. in tantalum technology.
  • the metal is then coated by a 5,000-6,000 angstroms (A) thick oxide film, whereon circuit components are arranged, but not on the material of the substrate, but of modifications of the sputtered metal.
  • One of the capacitor electrodes is in this case made from gold.
  • the known thin-film microcircuits made on metal substrates or dielectric substrates with a metal sublayer are deficient in that heterogenous materials are used to form thin-film components in a microcircuit resulting in reduced relability and output of undamaged microcircuit due to incompatible mechanical and temperature coefficients.
  • One more drawback of known thin-film microcircuits made on metal substrates or dielectric substrates with a metal sublayer is that employment of different materials to form components of a microcircuit makes it impossible to manufacture a circuit as a whole in one technological process.
  • An object of this invention is to provide a thin-film microcircuit on a metal substrate, wherein mechanical and temperature coefficients of materials employed are compatible.
  • Another object of this invention is to provide a thin-film microcircuit on a metal substrate, wherein all components can be manufactured in one technological process.
  • Yet another object of the invention is to provide a microcircuit on a metal substrate characterized by increased reliability and durability.
  • metal substrate current-carrying tracks, pads, capacitor electrodes from aluminum and resistors from aluminum oxynitride.
  • a passive microcircuit comprises a metal substrate I, e.g. from aluminum, a dielectric layer, which is an anode oxide layer 2 made from Al 2 O 3 aluminum current-carrying tracks 3, aluminum pads 4, aluminum electrodes of capacitors 5 and resistors 6 made from aluminum oxynitride.
  • the metal substrate I which is a 1-3 mm thick aluminum sheet, is polished to mirror finish grade (of the order of 250-300 A from peak to peak).
  • An anode oxide layer 2 which is no less than 12 mm thick, is formed on at least one surface of said aluminum sheet, e.g. by two-stage oxidation.
  • the aluminum sheet acquires an oriented structure and the anode oxide layer formed thereon acquires, consequently, a specific texture, which ensures oriented heat removal.
  • the anode oxide layer 2 is grown by two-stage oxidation in electrolyte on the base of acetic acid C 6 H 8 O 7 . H 2 O.
  • a thin aluminum layer is formed, e.g. by cathode sputtering, on this anode oxide layer 2. Then the current-carrying tracks 3, the pads 4 and the upper capacitor electrodes 5 are made by means of photolithography in one etching operation.
  • the metal substrate 1, its previously formed components being protected, is again placed into the vacuum chamber to make the aluminum-based resistors 6.
  • the metal part of the substrate 1 acts as lower electrodes of the capacitors 5.
  • said oxide layer 2 is formed so that it is thicker under the current-carrying tracks 3 and the pads 4.
  • the proposed passive microcircuit ensures dense wiring, oriented heat removal, high reliability and shock and vibration resistance.
  • the foredescribed microcircuit makes it possible to form RC structures with distributed elements.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
US05/664,171 1975-03-25 1976-03-05 Passive microcircuit Expired - Lifetime US4130855A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU2112851 1975-03-25
SU7502112851A SU546240A1 (ru) 1975-03-25 1975-03-25 Микросхема

Publications (1)

Publication Number Publication Date
US4130855A true US4130855A (en) 1978-12-19

Family

ID=20612517

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/664,171 Expired - Lifetime US4130855A (en) 1975-03-25 1976-03-05 Passive microcircuit

Country Status (7)

Country Link
US (1) US4130855A (enrdf_load_stackoverflow)
JP (1) JPS52110467A (enrdf_load_stackoverflow)
DE (1) DE2612747C3 (enrdf_load_stackoverflow)
FR (1) FR2305913A1 (enrdf_load_stackoverflow)
GB (1) GB1499965A (enrdf_load_stackoverflow)
NL (1) NL163701C (enrdf_load_stackoverflow)
SU (1) SU546240A1 (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313262A (en) * 1979-12-17 1982-02-02 General Electric Company Molybdenum substrate thick film circuit
US4495378A (en) * 1980-09-22 1985-01-22 Siemens Aktiengesellschaft Heat-removing circuit boards
US5006822A (en) * 1990-01-03 1991-04-09 Prabhakara Reddy Hybrid RF coupling device with integrated capacitors and resistors
US5122930A (en) * 1987-01-22 1992-06-16 Ngk Spark Plug Co., Ltd. High heat-conductive, thick film multi-layered circuit board
EP0794537A3 (en) * 1996-03-05 1999-07-07 Calsonic Corporation Resistor unit for speed controller
RU2227345C2 (ru) * 2002-02-26 2004-04-20 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" Гибридная интегральная схема свч-диапазона
RU2235390C1 (ru) * 2003-01-27 2004-08-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" Гибридная интегральная схема свч-диапазона
RU2290720C1 (ru) * 2005-05-20 2006-12-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Гибридная интегральная схема свч-диапазона
RU2302056C1 (ru) * 2005-11-11 2007-06-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Гибридная интегральная схема свч-диапазона
RU2390877C1 (ru) * 2009-04-08 2010-05-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Гибридная интегральная схема свч-диапазона
US20130020111A1 (en) * 2011-07-20 2013-01-24 Samsung Electro-Mechanics Co., Ltd. Substrate for power module package and method for manufacturing the same
US20230076503A1 (en) * 2021-09-09 2023-03-09 KYOCERA AVX Components Corporation Electronically Insulating Thermal Connector having a Low Thermal Resistivity

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1137649A (en) * 1980-07-10 1982-12-14 Guy J. Chaput Electrical circuit on porcelain coated metal substrate
GB2111312A (en) * 1981-11-04 1983-06-29 Philips Electronic Associated Substrates for electrical circuits
US4681655A (en) * 1986-11-24 1987-07-21 Microelectronics And Computer Technology Corporation Electrical interconnect support system with low dielectric constant
EP0366338A3 (en) * 1988-10-26 1990-11-22 Texas Instruments Incorporated A substrate for an electrical circuit system and a circuit system using that substrate
JP3965214B2 (ja) * 1996-09-26 2007-08-29 三星電子株式会社 マイクロ波ハイブリッド集積回路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593107A (en) * 1969-08-19 1971-07-13 Computer Diode Corp High voltage multiplier circuit employing tapered monolithic capacitor sections
US3679471A (en) * 1968-12-10 1972-07-25 Hugo Wyss Method for the production of electrical resistor bodies,and electrical resistor bodies produced in accordance with said method
US3680028A (en) * 1971-04-02 1972-07-25 Motorola Inc Vertical resistor
US3895272A (en) * 1972-12-20 1975-07-15 Gennady Grigorievich Smolko Thin-film microcircuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS475718U (enrdf_load_stackoverflow) * 1971-02-09 1972-09-19

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3679471A (en) * 1968-12-10 1972-07-25 Hugo Wyss Method for the production of electrical resistor bodies,and electrical resistor bodies produced in accordance with said method
US3593107A (en) * 1969-08-19 1971-07-13 Computer Diode Corp High voltage multiplier circuit employing tapered monolithic capacitor sections
US3680028A (en) * 1971-04-02 1972-07-25 Motorola Inc Vertical resistor
US3895272A (en) * 1972-12-20 1975-07-15 Gennady Grigorievich Smolko Thin-film microcircuit

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313262A (en) * 1979-12-17 1982-02-02 General Electric Company Molybdenum substrate thick film circuit
US4495378A (en) * 1980-09-22 1985-01-22 Siemens Aktiengesellschaft Heat-removing circuit boards
US5122930A (en) * 1987-01-22 1992-06-16 Ngk Spark Plug Co., Ltd. High heat-conductive, thick film multi-layered circuit board
US5006822A (en) * 1990-01-03 1991-04-09 Prabhakara Reddy Hybrid RF coupling device with integrated capacitors and resistors
EP0794537A3 (en) * 1996-03-05 1999-07-07 Calsonic Corporation Resistor unit for speed controller
RU2227345C2 (ru) * 2002-02-26 2004-04-20 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" Гибридная интегральная схема свч-диапазона
RU2235390C1 (ru) * 2003-01-27 2004-08-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" Гибридная интегральная схема свч-диапазона
RU2290720C1 (ru) * 2005-05-20 2006-12-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Гибридная интегральная схема свч-диапазона
RU2302056C1 (ru) * 2005-11-11 2007-06-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Гибридная интегральная схема свч-диапазона
RU2390877C1 (ru) * 2009-04-08 2010-05-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Гибридная интегральная схема свч-диапазона
US20130020111A1 (en) * 2011-07-20 2013-01-24 Samsung Electro-Mechanics Co., Ltd. Substrate for power module package and method for manufacturing the same
US20230076503A1 (en) * 2021-09-09 2023-03-09 KYOCERA AVX Components Corporation Electronically Insulating Thermal Connector having a Low Thermal Resistivity

Also Published As

Publication number Publication date
FR2305913A1 (fr) 1976-10-22
DE2612747B2 (de) 1979-03-08
NL163701B (nl) 1980-04-15
JPS52110467A (en) 1977-09-16
GB1499965A (en) 1978-02-01
NL163701C (nl) 1980-09-15
DE2612747C3 (de) 1980-09-11
NL7602010A (nl) 1976-09-28
DE2612747A1 (de) 1976-10-14
FR2305913B1 (enrdf_load_stackoverflow) 1979-04-20
SU546240A1 (ru) 1978-09-25

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