US3901745A - Gallium arsenide photocathode - Google Patents

Gallium arsenide photocathode Download PDF

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Publication number
US3901745A
US3901745A US438139A US43813974A US3901745A US 3901745 A US3901745 A US 3901745A US 438139 A US438139 A US 438139A US 43813974 A US43813974 A US 43813974A US 3901745 A US3901745 A US 3901745A
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United States
Prior art keywords
gaas
layer
gaalas
substrate
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US438139A
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English (en)
Inventor
Martin Pion
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International Standard Electric Corp
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International Standard Electric Corp
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Filing date
Publication date
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Publication of US3901745A publication Critical patent/US3901745A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Definitions

  • the upper limit to the thickness of a GaAs wafer that can be used as a transmission type photocathode is set by the short diffusion length of photon excited electrons in GaAs (typically pm or less).
  • the mechanical properties of GaAs make it difficult if not impossible to produce satisfactory self-supporting wafers of the requisite thickness.
  • One method of overcoming this problem involves growing the wafer on a supporting substrate of GaAlAs which is itself grown on a seed of GaAs. At some stage of manufacture the GaAs seed material is removed by lapping, for if this were not done its optical absorption would prevent the completed structure from being used in the transmission mode.
  • the GaAlAs layer will have to be quite thick, typically 150 to 300 pm, in order to provide a sturdy support for the GaAs layer. This requires the maintenance of comparatively tight manufacturing tolerances during the growth stage in order to produce a homogeneous uniform thickness layer of such depth.
  • the present invention is concerned with the provision of a rim structure which will provide a measure of mechanical support for the photocathode at its periphery.
  • a method of making a GaAs transmission type photocathode including the steps of growing an epitaxial layer of GaAlAs upon a GaAs substrate, of growing an epitaxial layer of GaAs upon the layer of GaAlAs, and of removing, without penetrating through either of the epitaxial layers, the central region of the GaAs substrate to form an apertured n'm supporting the periphery of the layers.
  • This permits use of a thinner GaAlAs layer, typically in the range of 40 to 100 pm.
  • FIGURE schematically shows a crosssection through the photocathode.
  • the preferred orientation of the GaAs substrate is the I00 crystal orientation, an altemative preferred orientation is the l l 1 crystal orientation).
  • the GaAlAs layer 1 is covered with a thin active outer layer 3 of p type GaAs typically 5 to 10 pm thick.
  • the coated substrate is prepared for etching by attaching it to a support 4 by bedding it face downwards in wax 5.
  • the width of the masked peripheral region 6 is typically 1 to 2
  • the central region of the GaAs 7 substrate is next removed chemically by a bubble etching technique which permits uniform removal over a large area.
  • the coated substrate, still secured to its support 4, is placed with its epitaxially grown layers face upwards in a suitable etch contained in a vessel with a porous base through which is pumped nitrogen gas.
  • a suitable non-selective etch is a mixture of sulphuric acid and hydrogen peroxide.
  • the lattice constants of GaAs and GaAlAs are closely matched to provide an improved layered structure of higher sensitivity and reduced stress.
  • a method of making a GaAs transmission type photocathode comprising the steps of growing an epitaxial layer of GaAlAs upon a GaAs substrate, growing an epitaxial layer of GaAs upon the layer of GaAlAs, coating the entire outer surface of the GaAs epitaxial layer with a layer of wax extending around the sides of the GaAs epitaxial and GaAlAs epitaxial layers and around the peripheral rim portion on the opposite surface of the GaAs substrate so that only the central region of the substrate is exposed, and removing the exposed central region of the GaAs substrate without penetrating through either of the epitaxial layers to form an apertured rim of GaAs supporting the periphery of the GaAlAs and GaAs layers.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Light Receiving Elements (AREA)
US438139A 1973-02-06 1974-01-30 Gallium arsenide photocathode Expired - Lifetime US3901745A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB578273A GB1439822A (en) 1973-02-06 1973-02-06 Gallium arsenide photocathodes

Publications (1)

Publication Number Publication Date
US3901745A true US3901745A (en) 1975-08-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
US438139A Expired - Lifetime US3901745A (en) 1973-02-06 1974-01-30 Gallium arsenide photocathode

Country Status (5)

Country Link
US (1) US3901745A (fr)
DE (1) DE2404016A1 (fr)
FR (1) FR2216668B1 (fr)
GB (1) GB1439822A (fr)
NL (1) NL7401016A (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959038A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959037A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3972750A (en) * 1975-04-30 1976-08-03 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US4019082A (en) * 1975-03-24 1977-04-19 Rca Corporation Electron emitting device and method of making the same
US4477294A (en) * 1981-05-06 1984-10-16 The United States Of America As Represented By The Secretary Of The Army Method of forming GaAs on Aly Ga1-y As transmission mode photocathodehode
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
US4713353A (en) * 1985-07-11 1987-12-15 Licentia Patent-Verwaltungs Gmbh Method of producing a transparent photocathode
US4997787A (en) * 1988-12-06 1991-03-05 Fujitsu Limited Method for fabricating a semiconductor film which is electrically isolated from a substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
FR2506518A1 (fr) * 1981-05-20 1982-11-26 Labo Electronique Physique Structure multiplicatrice d'electrons comportant un multiplicateur a galettes de microcanaux suivi d'un etage amplificateur a dynode, procede de fabrication et utilisation dans un tube photoelectrique

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3575628A (en) * 1968-11-26 1971-04-20 Westinghouse Electric Corp Transmissive photocathode and devices utilizing the same
US3592705A (en) * 1969-05-02 1971-07-13 Sony Corp Method of making semiconductor device
US3631303A (en) * 1970-01-19 1971-12-28 Varian Associates Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
US3823043A (en) * 1970-12-23 1974-07-09 Philips Corp Method of manufacturing semiconductor body

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3575628A (en) * 1968-11-26 1971-04-20 Westinghouse Electric Corp Transmissive photocathode and devices utilizing the same
US3592705A (en) * 1969-05-02 1971-07-13 Sony Corp Method of making semiconductor device
US3631303A (en) * 1970-01-19 1971-12-28 Varian Associates Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
US3823043A (en) * 1970-12-23 1974-07-09 Philips Corp Method of manufacturing semiconductor body

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019082A (en) * 1975-03-24 1977-04-19 Rca Corporation Electron emitting device and method of making the same
US3959038A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959037A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3972750A (en) * 1975-04-30 1976-08-03 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US4477294A (en) * 1981-05-06 1984-10-16 The United States Of America As Represented By The Secretary Of The Army Method of forming GaAs on Aly Ga1-y As transmission mode photocathodehode
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
US4713353A (en) * 1985-07-11 1987-12-15 Licentia Patent-Verwaltungs Gmbh Method of producing a transparent photocathode
US4997787A (en) * 1988-12-06 1991-03-05 Fujitsu Limited Method for fabricating a semiconductor film which is electrically isolated from a substrate

Also Published As

Publication number Publication date
FR2216668B1 (fr) 1977-09-16
NL7401016A (fr) 1974-08-08
FR2216668A1 (fr) 1974-08-30
GB1439822A (en) 1976-06-16
DE2404016A1 (de) 1974-08-08

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