US3901499A - Mounting device for crystalline rods - Google Patents

Mounting device for crystalline rods Download PDF

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Publication number
US3901499A
US3901499A US446160A US44616074A US3901499A US 3901499 A US3901499 A US 3901499A US 446160 A US446160 A US 446160A US 44616074 A US44616074 A US 44616074A US 3901499 A US3901499 A US 3901499A
Authority
US
United States
Prior art keywords
rod
frame member
bores
screws
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US446160A
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English (en)
Inventor
Ludwig Sporrer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of US3901499A publication Critical patent/US3901499A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00—Work holders
    • Y10S269/903—Work holder for electrical circuit assemblages or wiring systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/17—Socket type
    • Y10T279/17761—Side detent
    • Y10T279/17821—Set screw

Definitions

  • a device for mounting Crystalline rods Such as Semi I conductor rods which are undergoing a floating zone [52] 269/156 23/273 2 melt treatment, comprised of a frame for supporting a 269/287 269/321 279/83 rod and and having a plurality of axially extending p spaces in the peripheral boundary thereof, along [58] held of Search 23/273 30] 279/83 with adjustable screws for mating with bores in the 269/155 321 321 WE frame periphery for anchoring and centering a rod end within the frame.
  • a crystalline rod such as composed of a semiconductor material, for example, silicon
  • a reaction chamber so that an induction heating coil within the chamber encompasses an axial portion of the rod and upon energization of the coil, a zone of melt is generated on the rod. Relative movement between the coil and the rod is effected so that the zone of melt floats along the length of the rod from one end to the other.
  • This type of process is used to treat, for example a semiconductor rod, in order to either concentrate impurities within the rod at one end of the rod or to transform a polycrystalline semiconductor rod into a monocrystalline rod.
  • a seed or core crystal is attached to a stock rod and the initial zone of melt is generated in the core crystal and then moved back and forth along the length of the rod until a desired degree of treatment has been achieved.
  • the rod (including core crystal) member is generally mounted vertically at its opposite ends by a pair of mounting devices during such a floating zone melt process.
  • German Pat. No. 1,114,171 describes mounting devices for rod-shaped semiconductor materials undergoing a floating zone melt process.
  • these prior art mounting devices comprise a hollow frame member having three rotatable and resilient clamping means located in two different planes, both of which are essentially perpendicular to the vertical axis of the frame and the axis of a rod mounted within the frame.
  • the clamping means are actuatable by screws or studs mounted in the frame member which have their ends in contact with the clamping means.
  • Such devices have a relatively complicated construction and are difficult to adjust to attain a proper centering of a rod mounted therein.
  • the various components of such mounting devices heat-up during a floating melt zone process when the induction heating coil approaches a rod end since the components extend into the field of the HF coil.
  • the invention provides a rod mounting device which substantially eliminates the aforesaid prior art drawbacks and comprises a hollow frame member for mounting a rod end-and having at least one open space extending in the axial direction of the frame member along with an adjustable screw matable with a bore within the frame for anchoring and centering a rod end within the frame.
  • It is a novel feature of the invention to provide a rod mounting device comprised of a hollow cylindrical frame member having threesomewhat M-shaped wall portions or U-shaped open spaces or recesses symmetrically spaced about the periphery of the frame memher, with a threaded bore adjacent to each leg portion of the M-shaped wall portions and a screw for mating with each bore and having a tip for holding and centering a rod end mounted within the frame member.
  • FIGURE is a perspective illustration of a rod mounting device constructed in accordance with the principles of the invention.
  • U-shaped open spaces are symmetrically spaced about the periphery of the frame member.
  • the open spaces in the frame member are preferably spaced about apart about a rod axis within the frame member.
  • the high frequency field of a coil can induce considerably less heating current into the frame member or mounting device through the open spaces, which extend in the axial direction of the frame member.
  • the remaining solid areas of the frame between the open areas are resilient in respect to other solid areas so that even if some slight heating of the frame member occurs during a zone melting process, the resiliency of wall portions of the frame member will maintain a semiconductor rod in its preset position.
  • the preferred embodiment of the invention also include a plurality of threaded bores in the frame member which are spaced about the frame periphery so as to be substantially symmetrically spaced about a rod axis and mating screws or bolts which, in cooperation with the bores, anchor and center a rod end within the frame member.
  • alternate bores are dis posed in one of two parallel planes which extend perpendicularly to the vertical axis of the frame member, which is, of course, parallel to a rod axis.
  • the threaded bores are located adjacent the peripheral edges of the open spaces or recesses within the frame member and alternate bores are disposed at a point in one of two parallel planes which extend perpendicularly to a rod axis so that a line joining the respective center points of two adjacent bores defines an angle of about 60 with one of the parallel planes.
  • This type of arrangement provides very good centering and anchoring of a semiconductor rod mounted within the frame member.
  • the screws or bolts utilized in the rod mounting devices of the invention are preferably composed of steel and are provided with a tungsten carbide (Widia metal) tips.
  • tungsten carbide Widia metal
  • Such screws provide a very good attachment of a semiconductor rod since the screw tips tend to slightly work into the surface of a rod and securely anchor the rod in place.
  • the preferred screws are provided with a milled screw head so that better centering is achieved and centering tools or the like are rendered superfluous. Further, milled screw heads give an operator a better feel of pressure during attachment of a semiconductor rod.
  • the frame member and screws are composed of a high grade steel, for example a steel having approximately a 19 percent chromium and approximately a 9 percent nickel content therein (V2A-steel).
  • V2A-steel a steel having approximately a 19 percent chromium and approximately a 9 percent nickel content therein
  • the rod mounting device of the invention allows one to mount and center various rod-shaped members having differnt diameters.
  • very small diameter rods for example core or seed crystal rods
  • the wall thickness (or strength) of the frame member is matched to the diameter of the rod so as to achieve a good resilient effect.
  • frame members adapted for small diameter rods have a reduced strength wall in relation to a normal frame member. If necessary, nuts may be placed onto the bores in order to attain better guidance of a milled screw.
  • the rod mounting devices of the invention are espe cially useful in a vacuum environment, such as sometimes present within a reaction chamber of a floating zone melt process, since lubricating means are not required.
  • a hollow cylindrically shaped steel frame 1 having three somewhat U-shaped open spaces or recesses 3 milled into the peripheral wall of frame 1.
  • the recesses 3 extend parallel to a rod axis 2 and are symetrically spaced about axis 2.
  • a plurality of bores 4 having internal threads4a are spaced about the peripheral wall of frame 1. Inthe embodimentshown, six bores 4 are provided adjacent each leg portion of the U-shaped openings or recesses 3.
  • Alternate bores 3 are disposed in one of two parallel planes P and P which are perpendicular to the rod axis 2 and are located at a point in one of the planes so that a line L joining their respective center points defines an angle a with one of the planes P or P of about 60.
  • a steel screw 5 is provided for mating with each of the bores 3 so that the screws tip 6, which is composed of tungsten carbide (Widia metal) extends into the interior of frame 1 and contacts a semiconductor rod end (not shown) mounted within frame 1.
  • the screw tip 6 works itself slightly into the surface of a semiconductor rod and provides a good attachment between the frame and a rod end.
  • the screws 5 also has a milled head 7 which simplifies centering of a rod within the frame, since screw adjustment can easily be carried out by hand.
  • alternate bores of said plurality of bores are disposed in one of two parallel planes extending perpendicularly to the axial direction of a rod mounted within said frame.
  • a device for mounting an end of a semiconductor crystalline rod undergoing a floating zone melt treatment comprising:
  • a hollow cylindrically shaped frame member for mounting an end of the rod
  • said frame member having a peripheral wall with three U-shaped recesses therein extending in the axial direction of the rod;
  • peripheral wall having threaded bores adjacent spaced peripheral edges of said recesses; and screws for mating with said bores for anchoring and centering the rod end within said frame member.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US446160A 1973-05-07 1974-02-27 Mounting device for crystalline rods Expired - Lifetime US3901499A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2322969A DE2322969C3 (de) 1973-05-07 1973-05-07 Vorrichtung zum Haltern der Stabenden beim tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
US3901499A true US3901499A (en) 1975-08-26

Family

ID=5880196

Family Applications (1)

Application Number Title Priority Date Filing Date
US446160A Expired - Lifetime US3901499A (en) 1973-05-07 1974-02-27 Mounting device for crystalline rods

Country Status (6)

Country Link
US (1) US3901499A (enrdf_load_stackoverflow)
JP (1) JPS5443476B2 (enrdf_load_stackoverflow)
BE (1) BE814657A (enrdf_load_stackoverflow)
DE (1) DE2322969C3 (enrdf_load_stackoverflow)
DK (1) DK135409C (enrdf_load_stackoverflow)
IT (1) IT1010390B (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060392A (en) * 1975-07-01 1977-11-29 Wacker-Chemitronic Gesellshaft Fur Elektronik Grundstoffe Mbh Device for the support of a crystalline rod
US4257841A (en) * 1978-01-06 1981-03-24 Monsanto Company Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
US4448432A (en) * 1981-06-19 1984-05-15 French Errol J Sabre saw chuck
US5427057A (en) * 1991-11-28 1995-06-27 Shin-Etsu Handotai Co., Ltd. Self-clamping holder for polysilicon rod used in floating-zone single-crystal growth method
US5843623A (en) * 1996-09-10 1998-12-01 International Business Machines Corporation Low profile substrate ground probe
US6044573A (en) * 1998-03-25 2000-04-04 Cockrill; Huston G. Measuring device
US6270621B1 (en) 1993-06-02 2001-08-07 Applied Materials, Inc. Etch chamber
US20100229796A1 (en) * 2009-03-10 2010-09-16 Mitsubishi Materials Corporation Manufacturing apparatus of polycrystalline silicon

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344351A (en) * 1976-10-06 1978-04-21 Shizuoka Seiki Co Ltd Grain dryer
DE102014213628B3 (de) * 2014-07-14 2015-10-22 Wacker Chemie Ag Halterung für Impflingskristalle und Siliciumstäbe sowie Verfahren zur Herstellung eines einkristallinen Siliciumstabes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals
US3113841A (en) * 1959-05-08 1963-12-10 Siemens Ag Floating zone melting method for semiconductor rods
US3189415A (en) * 1958-07-30 1965-06-15 Siemens Ag Device for crucible-free zone melting
US3191924A (en) * 1959-12-31 1965-06-29 Siemens Ag Device for mounting semiconductor rods in apparatus for crucible-free zone melting

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals
US3189415A (en) * 1958-07-30 1965-06-15 Siemens Ag Device for crucible-free zone melting
US3113841A (en) * 1959-05-08 1963-12-10 Siemens Ag Floating zone melting method for semiconductor rods
US3191924A (en) * 1959-12-31 1965-06-29 Siemens Ag Device for mounting semiconductor rods in apparatus for crucible-free zone melting

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060392A (en) * 1975-07-01 1977-11-29 Wacker-Chemitronic Gesellshaft Fur Elektronik Grundstoffe Mbh Device for the support of a crystalline rod
US4257841A (en) * 1978-01-06 1981-03-24 Monsanto Company Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
US4448432A (en) * 1981-06-19 1984-05-15 French Errol J Sabre saw chuck
US5427057A (en) * 1991-11-28 1995-06-27 Shin-Etsu Handotai Co., Ltd. Self-clamping holder for polysilicon rod used in floating-zone single-crystal growth method
US6270621B1 (en) 1993-06-02 2001-08-07 Applied Materials, Inc. Etch chamber
US5843623A (en) * 1996-09-10 1998-12-01 International Business Machines Corporation Low profile substrate ground probe
US6044573A (en) * 1998-03-25 2000-04-04 Cockrill; Huston G. Measuring device
US20100229796A1 (en) * 2009-03-10 2010-09-16 Mitsubishi Materials Corporation Manufacturing apparatus of polycrystalline silicon
US8840723B2 (en) * 2009-03-10 2014-09-23 Mitsubishi Materials Corporation Manufacturing apparatus of polycrystalline silicon

Also Published As

Publication number Publication date
DK135409B (da) 1977-04-25
DK135409C (da) 1977-10-10
JPS5443476B2 (enrdf_load_stackoverflow) 1979-12-20
DE2322969B2 (de) 1980-02-28
DE2322969C3 (de) 1980-10-16
IT1010390B (it) 1977-01-10
JPS5015705A (enrdf_load_stackoverflow) 1975-02-19
BE814657A (fr) 1974-09-02
DE2322969A1 (de) 1974-11-28

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