US3890525A - Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer - Google Patents

Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer Download PDF

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Publication number
US3890525A
US3890525A US370446A US37044673A US3890525A US 3890525 A US3890525 A US 3890525A US 370446 A US370446 A US 370446A US 37044673 A US37044673 A US 37044673A US 3890525 A US3890525 A US 3890525A
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United States
Prior art keywords
conductive layer
type conductive
image pickup
tellurium
pickup tube
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Expired - Lifetime
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US370446A
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English (en)
Inventor
Tadaaki Hirai
Eiichi Maruyama
Kiyohisa Inao
Hideaki Yamamoto
Naohiro Goto
Yukinao Isozaki
Keiichi Shidara
Teruo Uchida
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Hitachi Ltd
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Hitachi Ltd
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Priority claimed from JP47059514A external-priority patent/JPS5230091B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to US370446A priority Critical patent/US3890525A/en
Priority to GB2932373A priority patent/GB1422381A/en
Priority to DE19732333283 priority patent/DE2333283C3/de
Priority to FR7324257A priority patent/FR2237307B1/fr
Priority to NL7309190.A priority patent/NL158019B/xx
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Publication of US3890525A publication Critical patent/US3890525A/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • FIG. 1 A first figure.
  • FIG. 3 220:: ZOEmOmZOU THICKNESS 0F FILM (F PATEN'IEIIJIIII I 7 I975 COMPOSITION (ATOMIC 95)
  • FIG. 3
  • the present invention relates generally to the construction of a photoconductive layer used for the target of an image pickup tube of the vidicon type, or more particularly to a photoconductive layer with a rectifying contact which has an increased sensitivity and an improved spectral sensitivity to red light.
  • Sb S PbO and Si are widely used as materials of photoconductive layers for the target of the vidicon type image pickup tube.
  • Sb S constitutes a photoconductive layer of injecting contact type
  • PhD and Si are used for the photoconductive layers of rectifying contact or junction type.
  • the advantages of the photoconductive layer of rectifying contact or junction type over that of injection type are a higher response speed, small dark current and higher sensitivity.
  • the photoconductive materials capable of forming a rectifying contact successfully used as a target of the image pickup tube are limited, and it is difficult to obtain a photoconductive material with properties suitable in all respects.
  • the peak of spectral sensitivity for example, is located in the proximity of infrared range for Si and on the side of visible short wavelength for PhD, with the result that if they are used for a color image pickup tube, Si and PbO have insufficient sensitivity to blue and red respectively.
  • the inventors have found that amorphous selenium is also capable of forming a rectifying contact suitable for the target of the image pickup tube, but this material also has the disadvantage of insufficient sensitivity to red light.
  • U.S. Pat, No. 3,350,595 A method to improve the sensitivity to red light is disclosed in U.S. Pat, No. 3,350,595.
  • a conductive thin film is deposited on an insulating substrate which is in turn covered with a photoconductive layer comprising mainly a mixture of tellurium and selenium.
  • the surface portion of the photoconductive layer adjacent to the conductive thin film contains selenium of 70 to 80 by weight while the opposite surface portion thereof includes selenium of 90 to I by weight, the selenium content gently changing between both the surface portions.
  • the tellurium content in the photoconductive layer near the interface thereof with the conductive thin film is high is accompanied by the disadvantage of increased dark current.
  • U.S. Pat. No. 3,350,595 discloses a method in which a blocking layer of such metal as cesium with small work function is interposed between the conductive film and the photoconductive layer. This method, however, is disadvantageous in that the manufacturing processes are complicated.
  • the object of the present invention is to obviate the above-mentioned disadvantages and to provide a photoconductive target of an image pickup tube which is high in sensitivity to red light, small in dark current and is easily manufactured.
  • the photoconductive target of the image pickup tube comprises a light-transmitting substrate, a first N-type conductive layer deposited on said substrate and a P-type conductive layer making a rectifying contact with said first N-type conductive layer, said P-type conductive layer including at least selenium and tellurium, the composition of said P-type conductive layer being different along the direction of the thickness thereof, the average content of selenium in said P-type conductive layer being not less than 50 atomic percent, the content of tellurium at both surfaces of said P-type conductive layer being not more than l0 atomic percent, the maximum tellurium content of 10 to 40 atomic percent being located on a plane in said P-type conductive layer nearer to said first N-type conductive layer than the middle plane of said P-type conductive layer.
  • the N-type conductive layer is a light-transmitting conductive film preferably including as its main component an oxide of tin, indium or titanium. Further, to prevent the crystallization of the P-type conductive layer, an N-type conductive layer formed of one substance selected from the group consisting of CdS, CdSe, ZnS, ZnSe and a mixture thereof may be interposed between the P-type conductive layer and the light-transmitting conductive film or a translucent metal making up the surface portion of the light-transmitting substrate nearer to the side of the N-type conductive film.
  • the P-type conductive layer may include As, Sb, P, Bi, Ge and/or Si in addition to selenium and tellurium.
  • Amorphous selenium is generally of P conduction type and forms a rectifying contact with a variety of N- type materials including films of single crystals or crystallites of such lV group semiconductors as Ge and Si, [I] V group semiconductors such as GaAs and GaP and II VI group semiconductors.
  • the most suitable material of N-type conduction to form a photoconductive layer for the target of an image pickup tube in combination with selenium are an oxide of tin used for a transparent conductive film, an oxide of indium, an oxide of titanium, and II Vl group semiconductors such as ZnS, ZnSe, CdS and CdSe.
  • the II Vl group semiconductors cannot be used as such an electrode at the same time without additional provision of the transparent electrode of any of the above-mentioned oxides or a translucent metal laid thereon.
  • FIG. I is a sectional view showing the fundamental construction of the target of the image pickup tube according to the present invention.
  • FIGS. 2 to 5 are graphs illustrating the distribution of component elements along the direction of the thickness of the P-type photoconductive layer.
  • the target of an image pickup tube according to the invention generally comprises a glass substrate 1, a transparent electrode 2 extended on the glass substrate 1, an N-type conductive layer 3 and a P-type conductive layer 4.
  • Reference numeral 5 shows incident light, and numeral 6 a scanning electron beam.
  • a rectifying contact is formed between the N-type conductive layer 3 and the P-type conductive layer 4.
  • the transparent electrode 2 is formed of an oxide of N-type conductivity
  • the transparent electrode 2 and the N-type conductive electrode 3 are actually integrated into a single layer.
  • sensitization is necessary to improve the sensitivity to red light since the abovementioned materials other than CdSe do not have sen sitivity to red light.
  • a well-known method to improve sensitivity of ll Vl group to red light consists in doping into it Cl, Br, I, In, Ga or other elements acting as a donor together with Cu, Ag or the like element forming an acceptor.
  • the sensitivity to red light is successfully improved in combination with the above-mentioned method concerning the sensitization of the N-type conductive layer of ll Vl group semiconductor.
  • the sensitivity to red light can be improved by adding Te to amorphous selenium.
  • the electrical resistance of Se to which Te has been added is sharply reduced. thereby degrading the char-- acteristics ofthe target of the image pickup tube. If, for example, the concentration of Te in the neighborhood ofthe interface between N-type conductive layer 3 and P-type conductive layer 4 is increased, the reverse breakdown voltage of the rectifying contact is decreased thereby to increase the dark current in the image pickup tube.
  • the Te concentration of the P- type conductive layer 4 as a whole is increased, the resistance of the P-type layer is decreased or the carrier mobility in the layer is reduced, with the result that the dark current is increased or the time response characteristics are degraded.
  • the intensity of electric field in such a portion is decreased for the degradation of the response characteristic thereof, and therefore it is necessary to maintain the Te concentration in that portion in the range from O to 10 atomic percent.
  • the Te concentration of as little as l0 atomic percent in the P-type conductive layer cannot achieve sufficient improvement in sensitivity to red light.
  • the most effective method to improve the sensitivity to red light is to provide a portion between the surfaces of the P-type conductive layer with the main component of Se where the Te concentration is maximum. If the excitation of carriers is to be effected satisfactorily at the point of high Te concentration, it is desirable that such a portion be located at a position the nearest possible to the plane of incidence ofa light signal into the P-type conductive layer, that is, the interface thereof with the N-type conductive layer. In other words, the
  • portion of maximum Te concentration should be located on a plane in the P-type conductive layer nearer to the N-type conductive layer than the middle plane of the P-type conductive layer.
  • Te concentration should preferably be between [0 to 40 atomic percent.
  • Te is not necessarily required to be smoothly distributed in the P-type conductive layer, but it may consist of a laminated structure of a multiplicity of films each about 10 A thick comprising films of high Te concentration and films of low Te concentration laid one on another. For this reason, it should be noted that the abovementioned range of Te concentration from 10 to 40 atomic percent represents an average value in the region several hundred A thick including the portion of maximum Te concentration.
  • the progressive change in Te concentration in the transverse direction of the P-type conductive layer may be abrupt in the microscopic order of, say, several tens of A. Somewhat macroscopically, however, the curve of the change should preferably be gentle in the order of several hundreds of A. If macroscopically there is a portion where the Te concentration is discontinued, the burning effect of the image pickup tube may be promoted.
  • the disadvantage of the photoconductive layer with Se as a main component resides in that the layer is easily crystallized by heat, with the result that the picture produced is accompanied by defects in the form of white dots.
  • an element such as As, Sb, P, Bi, Ge or Si is added to the material for the layer thereby to increase the viscosity thereof and delay the speed of crystallization.
  • This principle also applies to the present invention, wherein the life of the target may be lengthened by adding such an element to the P-type conductive layer thereby to reduce the speed of crystallization.
  • the addition of excessive amount of the element adversely affects the response characteristic of the target, the desirable amount of the element to be added being less than 20 atomic percent.
  • An effective method to prevent the above-mentioned phenomena is to deposit by vacuum or gaseous evaporation on the P-type conductive layer a film of Sb S As Se or A5 8 approximately 1000 A thick.
  • evaporation boats of tantalum are deposited simultaneously by evaporation in the vacuum of 3 X It) Torr on a transparent N-type conductive layer with tin oxide as a main component which is formed on a glass substrate.
  • a P-type photoconductive layer as thick as 3 pm is produced.
  • compositional profile of the P-type photoconductive layer is adjusted by controlling the current in each boat so as to be in consistence with the graph as shown in FIG. 2. Further, an Sb S film approximately 1000 A thick is deposited by evaporation on the sur face of the P-type photoconductive layer in the lowpressure argon of 5 X 10 Torr thereby to improve the landing characteristic of the scanning beam for the target of an image pickup tube.
  • Embodiment 2 A transparent N-type layer consisting mainly of indium oxide is deposited on a glass substrate.
  • a CdSe film 2000 A thick is further deposited in the vacuum of 2 X 10 Torr at the substrate temperature of 200C, on the surface ofa transparent N-type conductive layer by evaporation.
  • a first photoconductive material of Se containing Te of 40 atomic percent and a second photoconductive material of Se containing As of IO atomic percent are prepared in a quartz ampule. These two types of photoconductive materials are crushed and put into different evaporation boats of tantalum and then they are simultaneously deposited on the CdSe layer in the vacuum of 3 X lo Torr.
  • the speed of evaporation of the first and second photoconductive materials is continuously changed to form a film 4 pm thick with the composition distribution of Se, Te and As as shown in the graph of FIG. 3.
  • a film of A5 Se approximately 500 A thick in the vacuum of 3 X 10 Torr.
  • This As Se film is further covered by a similar method with an As Se film about 500 A thick in the low-pressure argon of 5 X l Torr.
  • This double layer of As Se is formed for the purpose of improving the landing characteristic of the scanning electron beam.
  • Embodiment 3 A translucent A] film is formed on a glsss substrate in the vacuum of l X l0 Torr at the substrate temperature of 150C, and then on this translucent Al film is deposited a CdS film 3000 A thick in the vacuum of X 10 Torr at the substrate temperature of l50C.
  • the current in the Te boat or the opening of a slit interposed between the Te evaporation boat and the substrate is controlled continuously thereby to produce a macroscopic profile of transverse distribution of composition as shown in H0. 4.
  • On this multiple layer is further deposited an A5 5 film about 500 A thick in the vacuum of 2 X l0 Torr thereby to improve the landing characteristic of the scanning electron beam.
  • Embodiment 4 Films of CdSe, CdTe and Se are deposited one after another in the vacuum of 5 X 10 Torr on a transparent N-type conductive electrode with tin oxide as a main component which is in turn deposited on a glass substrate.
  • a multiple layer 2 pm thick comprising 2000 to 4000 films of CdSe, CdTe and Se each having the average thickness of 10 A or less is obtained.
  • the macroscopic composition of the elements in the transverse direction of the layer is controlled by similar means to those employed in the preceding embodiment thereby to obtain the profile of composition as shown in FIG. 5.
  • the sensitivity especially to red light is improved without adverse effect on the rectifying contact with the N-type photoconductive layer by distributing Te in a P-type photoconductive layer containing Sc or 50 or more atomic percent in such a manner that the maximum Te content is located on a plane in the P-type conductive layer nearer to the N-type conductive layer than the middle plane of the Ptype conductive layer.
  • the spectral sensitivity of the P-type conductive layer is thus changed greatly, making it possible to produce a photoconductive layer suitable for a specific purpose.
  • a photoconductive target of an image pickup tube comprising a light-transmitting substrate, a first N-type conductive layer deposited on said substrate and a P- type conductive layer making a rectifying contact at a first surface thereof with said first N-type conductive layer and having a second outer surface to be scanned by electrons, said P-type conductive layer including at least selenium and tellurium, the composition of said P-type conductive layer being different along the direction of the thickness thereof, the average content of selenium in said P-type conductive layer being not less than 50 atomic percent, the content of tellurium at said first and second surfaces of said P-type conductive layer being not more than 10 atomic percent, the maximum tellurium content of 10 to 40 atomic percent being located on a plane in said P-type conductive layer between said first N-type conductive layer and the middle plane of said P-type conductive layer.
  • said first N-type conduc tive layer is a transparent conductive film including one substance selected from the group consisting of an oxide of tin. indium, and titanium as a main compo nent.
  • a photoconductive target of an image pickup tube according to claim I wherein a second N-type conductive layer formed of one substance selected from the group consisting of CdS, CdSe. ZnS, ZnSe and the mixture thereof is interposed between said P-type conductive layer and said first N-type conductive layer or a translucent metal electrode constituting the surface portion of said lighttransmitting substrate on the side of said first N-type conductive layer.
  • a photoconductive target of an image pickup tube according to claim I wherein said P-type conductive layer contains one substance selected from the group consisting of As, Sb. P. Bi, Ge, Si and the mixture thereof in addition to selenium and tellurium.
  • a photoconductive target of an image pickup tube wherein the concentration of said one substance in said P-type conductive layer is substantially uniform therethrough.
  • a photoconductive target of an image pickup tube wherein the minimum concentra tion of said selenium in said P-type conductive layer is located at the location of said maximum tellurium content in said P-type conductive layer.
  • a photoconductive target of an image pickup tube wherein the maximum concentration of said Cd in said P-type conductive layer is located at the location of said maximum tellurium content in said P-type conductive layer.
  • a photoconductive target of an image pickup tube wherein the absolute rate of increase of the tellurium content in said P-type conductive layer as the location of said maximum tellurium content is approached is equal to the absolute rate of decrease of the tellurium content as the location of said maximum tellurium content is passed.
  • a photoconductive target of an image pickup tube wherein the absolute rate of increase of the tellurium content in said P-type conductive layer as the location of said maximum tellurium content is approached is greater than the absolute rate of decrease of the tellurium content as the location of said maximum tellurium content is passed.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Light Receiving Elements (AREA)
US370446A 1972-07-03 1973-06-15 Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer Expired - Lifetime US3890525A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US370446A US3890525A (en) 1972-07-03 1973-06-15 Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer
GB2932373A GB1422381A (en) 1972-07-03 1973-06-20 Photoconductive target for an image pickup tube
DE19732333283 DE2333283C3 (de) 1972-07-03 1973-06-29 Photokathode für Bildaufnahmeröhren
FR7324257A FR2237307B1 (enrdf_load_stackoverflow) 1972-07-03 1973-07-02
NL7309190.A NL158019B (nl) 1972-07-03 1973-07-02 Beeldopneembuis, voorzien van een fotogeleidende trefplaat.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP47059514A JPS5230091B2 (enrdf_load_stackoverflow) 1972-07-03 1972-07-03
US370446A US3890525A (en) 1972-07-03 1973-06-15 Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer

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US3890525A true US3890525A (en) 1975-06-17

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US (1) US3890525A (enrdf_load_stackoverflow)
FR (1) FR2237307B1 (enrdf_load_stackoverflow)
GB (1) GB1422381A (enrdf_load_stackoverflow)
NL (1) NL158019B (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984722A (en) * 1973-05-21 1976-10-05 Hitachi, Ltd. Photoconductive target of an image pickup tube and method for manufacturing the same
US4007395A (en) * 1974-06-21 1977-02-08 Hitachi, Ltd. Target structure for use in photoconductive image pickup tubes
US4025815A (en) * 1974-06-14 1977-05-24 Sony Corporation Pick-up tube having photoconductor on zinc oxide layer
US4040985A (en) * 1975-04-16 1977-08-09 Hitachi, Ltd. Photoconductive films
DE3021027A1 (de) * 1979-06-07 1980-12-11 Hitachi Ltd Photoleitendes target
US4249106A (en) * 1978-11-08 1981-02-03 Hitachi, Ltd. Radiation sensitive screen
US4254359A (en) * 1978-05-19 1981-03-03 U.S. Philips Corporation Camera tube with graduated concentration of tellurium in target
US4319159A (en) * 1978-05-19 1982-03-09 U.S. Philips Corporation Camera tube selenium target including arsenic increasing in concentration from radiation side
EP0036779A3 (en) * 1980-03-24 1982-05-12 Hitachi, Ltd. Photoelectric conversion device and method of producing the same
US4348610A (en) * 1979-04-11 1982-09-07 U.S. Philips Corporation Camera tube with graded tellurium or arsenic target
EP0067015A3 (en) * 1981-05-29 1983-02-09 Hitachi, Ltd. Photoconductive film
FR2577713A1 (fr) * 1985-02-20 1986-08-22 Hitachi Ltd Cible de tube de prise de vues
US4617248A (en) * 1984-05-21 1986-10-14 Nippon Hoso Kyokai Doped photoconductive film including selenium and tellurium
US4866332A (en) * 1986-03-26 1989-09-12 Hitachi, Ltd. Target of image pickup tube
EP0326178A3 (en) * 1988-01-28 1990-06-27 Hitachi, Ltd. Method of making a photosensor
RU2273074C1 (ru) * 2004-07-20 2006-03-27 ОАО "Центральный научно-исследовательский институт "Электрон" Мишень видикона

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
US3350595A (en) * 1965-11-15 1967-10-31 Rca Corp Low dark current photoconductive device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350595A (en) * 1965-11-15 1967-10-31 Rca Corp Low dark current photoconductive device
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984722A (en) * 1973-05-21 1976-10-05 Hitachi, Ltd. Photoconductive target of an image pickup tube and method for manufacturing the same
US4025815A (en) * 1974-06-14 1977-05-24 Sony Corporation Pick-up tube having photoconductor on zinc oxide layer
US4007395A (en) * 1974-06-21 1977-02-08 Hitachi, Ltd. Target structure for use in photoconductive image pickup tubes
US4040985A (en) * 1975-04-16 1977-08-09 Hitachi, Ltd. Photoconductive films
US4254359A (en) * 1978-05-19 1981-03-03 U.S. Philips Corporation Camera tube with graduated concentration of tellurium in target
US4319159A (en) * 1978-05-19 1982-03-09 U.S. Philips Corporation Camera tube selenium target including arsenic increasing in concentration from radiation side
US4249106A (en) * 1978-11-08 1981-02-03 Hitachi, Ltd. Radiation sensitive screen
US4348610A (en) * 1979-04-11 1982-09-07 U.S. Philips Corporation Camera tube with graded tellurium or arsenic target
DE3021027A1 (de) * 1979-06-07 1980-12-11 Hitachi Ltd Photoleitendes target
US4330733A (en) * 1979-06-07 1982-05-18 Nippon Hoso Kyokai Photoconductive target
EP0036779A3 (en) * 1980-03-24 1982-05-12 Hitachi, Ltd. Photoelectric conversion device and method of producing the same
US4405879A (en) * 1980-03-24 1983-09-20 Hitachi, Ltd. Photoelectric conversion device and method of producing the same
EP0067015A3 (en) * 1981-05-29 1983-02-09 Hitachi, Ltd. Photoconductive film
US4463279A (en) * 1981-05-29 1984-07-31 Hitachi, Ltd. Doped photoconductive film comprising selenium and tellurium
US4617248A (en) * 1984-05-21 1986-10-14 Nippon Hoso Kyokai Doped photoconductive film including selenium and tellurium
FR2577713A1 (fr) * 1985-02-20 1986-08-22 Hitachi Ltd Cible de tube de prise de vues
US4866332A (en) * 1986-03-26 1989-09-12 Hitachi, Ltd. Target of image pickup tube
EP0326178A3 (en) * 1988-01-28 1990-06-27 Hitachi, Ltd. Method of making a photosensor
RU2273074C1 (ru) * 2004-07-20 2006-03-27 ОАО "Центральный научно-исследовательский институт "Электрон" Мишень видикона

Also Published As

Publication number Publication date
DE2333283A1 (de) 1974-01-31
NL7309190A (enrdf_load_stackoverflow) 1974-01-07
FR2237307B1 (enrdf_load_stackoverflow) 1977-05-13
FR2237307A1 (enrdf_load_stackoverflow) 1975-02-07
GB1422381A (en) 1976-01-28
NL158019B (nl) 1978-09-15
DE2333283B2 (de) 1976-05-06

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