US3838678A - Apparatus for precisely slicing a crystal in a crystal face thereof - Google Patents

Apparatus for precisely slicing a crystal in a crystal face thereof Download PDF

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Publication number
US3838678A
US3838678A US00367190A US36719073A US3838678A US 3838678 A US3838678 A US 3838678A US 00367190 A US00367190 A US 00367190A US 36719073 A US36719073 A US 36719073A US 3838678 A US3838678 A US 3838678A
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United States
Prior art keywords
crystal
orientation
slicing
face
rotary shaft
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Expired - Lifetime
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US00367190A
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English (en)
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A Kumada
S Jyomura
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Hitachi Ltd
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Hitachi Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels

Definitions

  • A isas-57a PAFENTEBBBI H914 ma sum 30; a
  • the present invention relates to improvements in apparatus for precisely slicing a crystal in a crystal face thereof.
  • optical elements have questionable transparency and uniformity.
  • the element accordingly must be precisely worked after being formed to any desired configuration.
  • the precision of a polished face is a factor which determines the quality of the optical element.
  • a variety of methods of lapping or polishing faces at high precision have therefore been developed.
  • KH PQ Kaliumdihydrogenphosphate (potassium dihydrogen phosphate)
  • KDP is .paraelectric .at room temperature, and is an optically negative uniaxial crystal belonging to the tetragonal system.
  • the indices of refraction are m 1.5095 (the refractive index along the major axis of elliptically polarized light) and e 1.4684 (the refractive index along the minor axis of eliptically polarized light).
  • the optic axis of KDP is identical with the c-axis of the crystal. Therefore, when a plate with two mutuallyopposing faces cut perpendicularly to the c-axis (hereinafter termed the C-plate) is inserted between two crossed Nicols whose polarization planes are arranged orthogonally to each other, a light shutter element is produced.
  • the birefringence for light incident in parallel with the c-axis of the crystal is null.
  • the incident linearly-polarized light is transmitted without being subject to any change, and is broken by the rear polarizing plate. Consequently, the quantity of light passing through the rear polarizing plate (hereinbelow termed the analyzer) is null.
  • the analyzer the quantity of light passing through the rear polarizing plate
  • a birefringence An is exhibited even for the light among the c-axis owing to the electrooptic effect.
  • the transmitted light becomes elliptically'polarizedlight.
  • the birefringence is proportional to the voltage, and is represented by:
  • n denotes the index of refraction
  • f the electrooptic coefficient
  • E the magnitude of electric field
  • equation (5) approximately corresponds to the following equation (6):
  • the contrast ratio can be expressed as the following equation:
  • a goniometer head is commonly used for the crystal orientation test unit and for a crystal slicing device
  • a crystal is fixed to a goniometer of the slicing device, and is properly sliced. After the slicing, the crystal is detached from the goniometer of the slicing device. It is fixed to the goniometer of the crystal orientation test unit, and has the orientation of the sliced face measured. If any deviation in orientation is found, the crystal is fixed to the goniometer'of the slicing device again and is sliced after correction of the orientation. Thereafter, these procedures are repeatedly carried out to reduce the deviation between the sliced face and the fixed orientation.
  • a further prior art method is the etched pattern method or the like, which consists in the combinationbetween means to optically measure the orientation of a crystal and a slicing device, and according to which, although the measurementof orientation and the slicing are executed in separate places, a rest supporting the crystal thereon is slidingly moved for operations on a movable guide between the optical means for the orientation measurement and the slicing device without detaching the crystal from the rest.
  • This method can really reduce the errors induced by the foregoing inefficient operations of setting and resetting the crystal onto the rest. It raises anew, however, the problem of the precision of the surface roughness in the rest moving means including the movable guide.
  • the contact portions between the rest and the movable guide are of a small number, and the alterations in position between them are smoothly effected.
  • This is subject to technical limitations. Besides, it is undeniable that the optical measurement of orientation is much lower in precision as compared with the measurement of orientation with X-rays. With this method, it is accordingly quite impossible to expect the slicing of a crystal at high precision.
  • An object of the present invention is to provide apparatus for precisely slicing a crystal in a crystal face thereof, which can slice various crystals in predetermined orientations at extraordinarily high precision and efficiently fishort timef A i i
  • the apparatus of the present invention for precisely slicing a crystal in a crystal face thereof is characterized by comprising a specimen mounting block which holds the crystal in a manner to be rotatable and slidable in an arbitrary direction, a crystal orientation identifying device which sets a standard face for X-ray irradiation and measures the orientation of the crystal by the X-ray irradiation, a crystal slicing device which is separated from the crystal orientation identifying device to a position defining a certain angle (for example, with respect to a rotary shaft and which has a cutting edge for slicing the crystal in a predetermined orientation,
  • FIG. I is a schematic cross-sectional view illustrating the principle construction of one form of the apparatus of the present invention for precisely slicing a crystal in a crystal face thereof;
  • FIG. 2 is a schematic vertical sectional view of the apparatus for precisely slicing a crystal as illustrated in FIG. 1;
  • FIG. 3 is a front view showing the external appearance of the apparatus for precisely slicing a crystal according to an embodiment of the present invention.
  • FIG. 4 is a side view showing the external appearance of the apparatus for precisely slicing a crystal as shown in FIG. 3.
  • FIGS. 1 and 2 are respective diagrams of the outlines along a cross section and a vertical section through a crystal slicing device, a crystal holder and an orientation identifying device of the apparatus of the present invention for precisely slicing a crystal in a crystal face thereof.
  • a crystal S attached to a specimen mounting block 6 disposed at an extreme end part of the crystal holder B is set at a predetermined orientation by the orientation identifying device C composed of an X-ray collimator 17 and a proportional counter tube 22. Thereafter, the whole crystal holder B is rotated by 90 from a position shown by dotted lines in FIG. 1 to a position shown by full lines in the same figure. Then, the crystal S is sliced by the slicing device A.
  • the position of the slicing device A with respect to a rotary shaft D of the orientation identifying device C need not always define the angle of 90, as in the above case.
  • Such positional change through rotation requires a smaller number of contact portions at movement as compared with the prior art positional alteration device based on sliding movement on a movable guide.
  • the former therefore has the advantage that it can be smoothly performed.
  • the slicing edge face 1 of the slicing device and the sliced face 2 of the crystal are within an identical plane, as shown in FIG. 2. Therefore, in order to rotate the rotary table by 90 and to bring the sliced face 2 of the crystal into a fixed position for X-ray measure ment the sliced face 2 must be brought off the plane of the slicing edge face 1, and thereafter rotated by into the fixed position.
  • the fixed plane (the standard face of the X-ray collimator 17 for X-ray irradiation) 3 of the fixed position must be so set as to be the same as the plane of the slicing edge face 1..At this time, the sliced face 2 must be always brought to the fixed plane 3 at an error within 1 t. Further, the slicing edge face i riiiist be afwayslocatedon 52955512 pTz'iif as the fixed plane 3. Therefore, in the case where the blade has become old by repeated slicing operations and where it is to be replaced with a new one, the edge face of the new blade must be secured onto the same plane as the fixed plane 3 at the error within 1 u.
  • the apparatus according to the present invention for precisely slicing a crystal in a crystal face thereon solves the problems.
  • FIGS. 3 and 4 show a front view and a left side view, respectively, of the apparatus according to the present invention for precisely slicing a crystal in a crystal face thereof.
  • an inside diametral cutting wheel 1' of the slicing device A can have its speed varied within a range of 2,000 4,000 r.p.s. by means of a high-speed spindle and an electric motor M.
  • Cutting liquid (or cutting oil) is supplied by a nozzle 2' via a regulating valve 3' from a liquid source.
  • a cover 4 is disposed which serves to prevent the cutting liquid and cut powder from being scattered.
  • the whole unit of the crystal holding arm portion B is fixed to an automatic feed table 5 by a whirl clamp handle 14, the automatic feed table 5 having as its guide face a face parallel to the diamond wheel 1.
  • the crystal holding arm portion B can be rotated through an arbitrary angle on the automatic feed table 5 and at a level with a rotary shaft D.
  • the specimen mounting block 6 is provided with an aligning knob 7 for setting the specimen S at the central part of the diamond wheel 1', and a clamp handle 8 for the knob 7. It is further provided with a longitudinalangle-dial 9 imparting a rotation in the longitudinal direction (x x direction) about an X-axis and a clamp handle 10 therefor, and a cross-angle-dial 11 imparting a rotation in the cross direction (y y direction) about a Y-axis and a clamp handle 12 therefor.
  • the indexing in the direction of thickness is conducted by vertically moving the specimen mounting block 6 with a pulse motor 13.
  • the indexing region is variable in a range of 0.001 3 mm.
  • the orientation identifying C is fixed to a goniometer frame 16 in front of the slicing device A by a coarse adjustment screw 15 and a fine adjustment screw 15'.
  • the coarse adjustment screw 15 and the fine adjustment screw 15' serve to set the standard face 2 of the collimator 17 relative to the slicing face of the diamond wheel 1'.
  • An X-ray tube (of, for example, CuKaX-rays) 18 has an output of 1 kW.
  • X-rays radiated from the collimator 17 are detected by the counter 22, and are indicated by a rate meter 24.
  • the counter 22 is fixed to an arbitrary angle by a counter fixing knob 23.
  • the collimator 17 is inclined from the standard face by a O-angle driving dial 19 so as to define the Bragg reflection angle 26 of the predetermined crystal face. Then, it is fixed by a 4 is the state of slicing of the specimen.
  • a 4 is the state of slicing of the specimen.
  • the collimator 17 is first set to the 29-value of the predetermined crystal face by the O-angle driving orientation measurement is completed. Thereafter, the 20 crystal holder B is rotated by 90. The indexing, the feed speed, the number of revolutions of the spindle, etc., are set at the optimum conditions. The slicing is conducted.
  • the indexing region is 0.001 3 mm as previously mentioned, the feed speed is 0.5 50 mm/min, 25
  • the following table lists the comparisons between the results of performance by the apparatus of the present invention for precisely slicing a crystal in a crystal face thereof and the results of slicing by various prior art methods of slicing a crystalresults of slicing by various prior art methods of slicing a crystal in a predetermined orientation.
  • the precision of the slicing orientation is at most-0.l or so, while the measurementof orientation generally requires a period of time of at least thirty minutes.
  • the precision of the slicing orientation is 20 inches (approximately 0.1 milliradian) or so, while the measurement of orientation can be carried out in an extremely short time of 2 3 minutes. It is accordingly apparent that the effect of the present invention is very great.
  • the apparatus according to the present invention for precisely slicing a crystal in a crystal face thereof can largely enhance the prior art techniques. In contradiction to the prior art, it can slice various crystals in predetermined orientations at extraordinarily high precision and in a short time.'It is therefore remarkably effective in practical use.
  • Apparatus for precisely slicing a crystal in a crystal face thereof comprising: a specimen mounting block TABLE Methods of Error Time Failure of lnter- Merits Measuring of Slicing required Specimen, locking and Orientation Orientation for meas- Utility Dewith Demerits uring Origree of Same Slicing entation Device back Over None, Requires skill in L 1- l 1 hour No failure Common reading Laue spot, X-ray pattern rest Long time, Poor precision Methods spec- A6)PI'OX. Poor utility Common Orientation error tromi 2 min. due to prerest caused by swell eter liminary and poor parallel- W.
  • adjusting means including a rotary shaft and supporting arm portion to support said block to be rotatable and slidable in an arbitrary direction, crystal orientation identifying means for measuring the orientation of said crystal by X-ray irradiation by setting a standard face for the X-ray irradiation, a crystal slicing device which is separated from said crystal orientation identifying means at a position defined by an angle of rotation about said rotary shaft and which has a cutting edge face for slicing said crystal in a predetermined orientation, means for rotationally moving said specimen mounting block between said crystal orientation identifying means and said crystal slicing device through said supporting arm portion so as to form a vertical plane with respect to said rotary shaft, said arm

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Details Of Cutting Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
US00367190A 1972-06-05 1973-06-05 Apparatus for precisely slicing a crystal in a crystal face thereof Expired - Lifetime US3838678A (en)

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JP47055055A JPS4917254A (enrdf_load_stackoverflow) 1972-06-05 1972-06-05

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722659A1 (de) * 1976-05-21 1977-11-24 Rca Corp Einrichtung zum abstimmen eines empfaengers auf von der norm abweichende traegerfrequenzen
EP0782907A1 (en) * 1995-11-30 1997-07-09 Nippei Toyama Corporation System and method for processing ingots
US5893308A (en) * 1994-05-19 1999-04-13 Tokyo Seimitsu Co., Ltd. Method of positioning work piece and system therefor
US5927263A (en) * 1995-10-31 1999-07-27 Nec Corporation Method for manufacturing completely circular semiconductor wafers
US20100240560A1 (en) * 2007-12-19 2010-09-23 Asahi Glass Company, Limited Ether composition
US8259901B1 (en) 2010-05-25 2012-09-04 Rubicon Technology, Inc. Intelligent machines and process for production of monocrystalline products with goniometer continual feedback
CN105522658A (zh) * 2016-01-08 2016-04-27 哈尔滨秋冠光电科技有限公司 一种a向蓝宝石窗口片的加工方法
CN109591211A (zh) * 2019-01-03 2019-04-09 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 晶体切割装置及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2556167A (en) * 1945-05-18 1951-06-12 Joseph E Coleman Crystal analysis apparatus
US3545325A (en) * 1969-02-28 1970-12-08 Aerojet General Co Cutting apparatus
US3662733A (en) * 1969-10-12 1972-05-16 Yoji Hattori Annular cutting apparatus with work removal means
US3702604A (en) * 1971-05-20 1972-11-14 Silicon Technology Work mounting mechanism in slicing machine

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2556167A (en) * 1945-05-18 1951-06-12 Joseph E Coleman Crystal analysis apparatus
US3545325A (en) * 1969-02-28 1970-12-08 Aerojet General Co Cutting apparatus
US3662733A (en) * 1969-10-12 1972-05-16 Yoji Hattori Annular cutting apparatus with work removal means
US3702604A (en) * 1971-05-20 1972-11-14 Silicon Technology Work mounting mechanism in slicing machine

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722659A1 (de) * 1976-05-21 1977-11-24 Rca Corp Einrichtung zum abstimmen eines empfaengers auf von der norm abweichende traegerfrequenzen
US6145422A (en) * 1994-05-19 2000-11-14 Tokyo Seimitsu Co., Ltd. Method of positioning work piece and system therefor
US5893308A (en) * 1994-05-19 1999-04-13 Tokyo Seimitsu Co., Ltd. Method of positioning work piece and system therefor
US5927263A (en) * 1995-10-31 1999-07-27 Nec Corporation Method for manufacturing completely circular semiconductor wafers
US6024814A (en) * 1995-11-30 2000-02-15 Nippei Toyama Corporation Method for processing ingots
US6056031A (en) * 1995-11-30 2000-05-02 Nippei Toyama Corporation System and method for processing ingots
EP0782907A1 (en) * 1995-11-30 1997-07-09 Nippei Toyama Corporation System and method for processing ingots
US6182729B1 (en) 1995-11-30 2001-02-06 Nippei Toyama Corporation System and method for processing ingots
US20100240560A1 (en) * 2007-12-19 2010-09-23 Asahi Glass Company, Limited Ether composition
US8259901B1 (en) 2010-05-25 2012-09-04 Rubicon Technology, Inc. Intelligent machines and process for production of monocrystalline products with goniometer continual feedback
US8934606B2 (en) 2010-05-25 2015-01-13 Rubicon Technology, Inc. Intelligent machines and process for production of monocrystalline products with goniometer continual feedback
US9134260B2 (en) 2010-05-25 2015-09-15 Rubicon Technology, Inc. Intelligent machines and process for production of monocrystalline products with goniometer continual feedback
CN105522658A (zh) * 2016-01-08 2016-04-27 哈尔滨秋冠光电科技有限公司 一种a向蓝宝石窗口片的加工方法
CN109591211A (zh) * 2019-01-03 2019-04-09 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 晶体切割装置及方法

Also Published As

Publication number Publication date
DE2328543A1 (de) 1974-01-03
JPS4917254A (enrdf_load_stackoverflow) 1974-02-15
DE2328543B2 (de) 1975-10-23

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