US3806742A - Mos voltage reference circuit - Google Patents

Mos voltage reference circuit Download PDF

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Publication number
US3806742A
US3806742A US00302991A US30299172A US3806742A US 3806742 A US3806742 A US 3806742A US 00302991 A US00302991 A US 00302991A US 30299172 A US30299172 A US 30299172A US 3806742 A US3806742 A US 3806742A
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United States
Prior art keywords
field
effect transistor
circuit
gate
power supply
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Expired - Lifetime
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US00302991A
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English (en)
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M Powell
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Motorola Solutions Inc
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Motorola Inc
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Priority to US00302991A priority Critical patent/US3806742A/en
Priority to JP48122305A priority patent/JPS4977159A/ja
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Definitions

  • a MOS voltage regulator circuit produces a regulated voltage at an output node.
  • a reference circuit including first and second MOSFETs connected in series be- [56] References Cited UNITED STATES PATENTS tween ground and a power supply produces an internal reference voltage. The internal reference voltage is 32:85:?
  • a feedback circuit including a diode- 3 612 908 10/1971 Heimbig iier IIIII I: 307/304 connected MOSFET is regulated thereby h 3:577:O47 Chem I 307/304 temal reference voltage 1s applied to an output c1rcu1t 3,673,438 6/1972 Lund 307/304 Including a pump MOSFET and a PulldOw dmde connected MOSFET which produce a regulated out- OTI-IER PUBLICATIONS put lt ge,
  • This invention relates to voltage regulator circuits, and particularly to MOS voltage regulator circuits suitable for application in integrated circuits.
  • V threshold voltage
  • MOS integrated circuits it is frequently useful to have a bias voltage supply which may be required to supply only a very small current. Usually, an extra lead is required on the package for connection to an external bias voltage supply, which prevents that lead from being used for some other function.
  • prior art voltage reference circuits provide output voltages which vary strongly with variations in the power supply, by a factor approximately equal to the ratios of the pullup and pulldown MOSFETS therein.
  • Some prior art circuits are capable of rapidly discharging a capacitive load to the desired reference voltage and other prior art circuits have been capable of rapidly charging a capacitive load to the desired reference voltage, but none provide the capability of rapid adjustment of any perturbation of the voltage on a capacitive load while drawing negligible current and having negligible dependence upon variations in the power supply voltage.
  • the present invention solves the aforementioned shortcomings of the prior art by providing a MOS voltage regulator circuit which produces a reference voltage which varies directly with the MOS threshold voltage, and responds rapidly to changes in the reference voltage even when connected to a capacitive load.
  • the MOS voltage regulator circuit according to the present invention further is sufficiently small in an integrated circuit implementation thereof to permit it to be economically incorporated on each chip, and yet dissipates negligible power.
  • the invention is a MOS voltage regulator circuit.
  • the regulator circuit includes a threshold reference circuit and an output circuit.
  • the threshold reference circuit includes a first MOSFET having a low width-to-length geometry ratio connected in series with a second MOSFET having a relatively large width-tolength geometry ratio.
  • the first MOSFET and the second MOSFET are connected between ground and the power supply voltage.
  • a feedback circuit from the threshold reference circuit output node consists of a third MOSFET having its gate connected to its drain. The drain of the third MOSFET is connected to the threshold reference circuit output node.
  • the source of the third MOSFET is connected to the gate of the second MOSFET, thereby limiting the quiescent voltage on the threshold reference stage output node to two MOS threshold voltage drops.
  • the output circuit includes a fourth MOSFET and a fifth MOSFET connected in a series between ground and the power supply, both having relatively large width-to-length geometry ratios.
  • the fifth MOSFET is a pulldown device having its gate connected to its drain and the fourth MOS- FET is a pullup device having its gate connected to the threshold reference stage output node.
  • the voltage regulator output node is connected to the source of the fourth MOSFET, and is held at a MOS threshold voltage drop from ground by the fourth and fifth MOS- FETs.
  • a sixth MOSF ET having its gate connected to its drain and its source connected to ground has its drain also connected to the gate of the second MOSFET, thereby tending to limit the voltage thereon to one MOS threshold voltage from ground.
  • the sixth MOSFET described hereinbefore is replaced by a diode.
  • the leakage current of the diode performs the same function as the current through the abovedescribed sixth MOSFET.
  • the third MOSFET is replaced by two MOSFETs connected in series, each having its gate connected to its drain, so that the voltage reference circuit output node is held at three MOS threshold voltage drops from ground. Also, the gate-to-drain connection of the fifth MOSFET is broken and a diode-connected MOSFET is connected therein so that the voltage regulator output is held at two MOS threshold voltage drops from ground.
  • a voltage from the output circuit is fed back to the threshold reference stage to amplify the threshold reference circuit output voltage to compensate for any deviation in the voltage regulator output voltage.
  • MOS voltage regulator circuit capable of providing a reference voltage in an integrated circuit which is independent of power supply voltage variations.
  • Another object of this invention is to provide an MOS voltage regulator circuit which presents a relatively low output impedance to a capacitive load, and responds within a specified time to a positive or negative change of the voltage on the capacitive load.
  • Yet another object of the invention is to provide an MOS voltage regulator circuit of the type described which dissipates low power.
  • FIG. 1 is a schematic diagram of the preferred embodiment of the invention.
  • FIG. 2 is a schematic diagram of another embodiment of the invention.
  • FIG. 1 is a schematic diagram of a field-effect transistor voltage regulator circuit 10.
  • Voltage regulator 10 includes a reference circuit 12 and an output circuit 14.
  • the reference circuit 12 includes MOSFETs 16, 18, 20 and 22.
  • MOSFET is widely understood to include within the scope of its meaning all insulated gate field-effect transistors, and this is the intended meaning in the description herein of this invention.
  • a MOSFET may be of the P-channel type or the N-channel type.
  • N-channel MOSFETs are used.
  • P-channel MOSFETs may also be used.
  • a MOSFET is a bilateral device having two main electrodes which may interchangeably function as source or drain electrodes, depending on which is at the more positive voltage.
  • MOSFET 16 has its drain and gate connected to power supply terminal 24, designated V The source of MOSFET 16 is connected to node 26, designated V MOSF ET 18 has its drain connected to node 26, and its source connected to ground and its gate connected to node 28.
  • MOSFET 20 has its gate and drain connected to node 26, and its source connected to node 28, designated V MOSFET 22 has its gate and drain connected to node 28 and its source connected to ground.
  • the output circuit 14 includes MOSFET 30 and MOSFET 32.
  • MOSFET 30 has its drain connected to power supply terminal 24 and its gate connected to node 26 and its source connected to output node 34, which is designated V MOSFET 32 has its gate and drain connected to output node 34 and its source connected to ground.
  • V MOSFET 16 has a relatively small width-to-length geometry ratio.
  • MOSFET 18 has a large width-tolength geometry ratio, which is normally many times that of MOSFET 16. (A MOSFET having its gate connected to its drain, may be referred to as a diodeconnected MOSFET, since current can flow only in one direction therethrough and is blocked from flowing in the other direction).
  • the operation of the reference circuit 12 is such that the voltage V, increases due to current supplied through MOSFET 16 if MOSFET 18 is off.
  • V The threshold voltage at which a MOSFET begins to turn on
  • V the threshold voltage V for a MOSFET increases as the reverse bias of the diode formed by the source of the MOSFET and the substrate is increased.
  • V has increased to approximately 2V volts
  • V tends to follow a threshold voltage drop below V impeded by current flowing to ground through MOSFET 22.
  • the width-to length ratio of MOSF ET 22 should normally be designed to be very small, so that the impedance thereof is very high compared to that of MOSFET 20, which may be a minimum geometry device.
  • MOSFET 18 has a much larger width-to-length geometry ratio than MOSF ET 16
  • MOSFET l8 begins to turn on, sinking the current flowing from MOSFET 16 into node 26 thereby limiting V, to approximately 2V volts.
  • the equilibrium value of V may be increased by merely reducing the width-to-length geometry ratio of MOSFET 18.
  • voltages may be capacitively stored on the gates of MOSFETs for appreciable periods of time.
  • MOSFET 22 prevents such a condition from occurring.
  • width-to-length geometry ratio is chosen to be sufficiently high that it will adequately discharge excess charge from the gate of MOS- FET 18 without appreciably impeding V from following a V voltage drop below V It should be appreciated, however, that in some cases MOSFET 22 may be omitted, if the leakage current of the reverse-biased diode formed by the source of MOSFET 20 and the substrate is sufficiently large to discharge excess charge from the gate of MOSFET 18 in an acceptable amount of time. It should also be recognized that the amount variation of V caused by a variation in V is approximately proportional to the ratio of the impedance of MOSFET 16 to that of MOSFET 18.
  • the geometry ratios of MOSFET 16 and MOSFET 18 may be chosen so that V, depends almost solely on V (which is a MOS processing parameter) and is nearly exactly equal to 2V Assuming a completely capacitive load (not shown) is connected to node 34, the regulated output voltage V, will attain an equilibrium value of V volts, since diode-connected MOSFET 32, which normally has a relatively large geometry ratio, will discharge the current from the load capacitance, thereby tending to decrease V to V volts.
  • FIG. 2 is a schematic diagram of another embodiment of the present invention. A feature illustrated in the embodiment shown in FIG.
  • FIG. 2 is use of series connections of diode-connected MOSFETs to obtain an internal reference voltage V, equal to 3 V and an output voltage V equal to 2V
  • the circuit illustrated in FIG. 1 is modified, as shown in FIG. 2, to include diode-connected MOSFETs 42 and 44, which are connected in series between nodes 26 and 28 in place of MOSFET 20.
  • V follows an increase in V, by a 2V volt drop, so V, attains an equilibrium value close to 3V volts.
  • diode-connected MOSFET is connected between node 34 and node 48, designated V,,. If V; is greater than ZV then V, will be greater than V and MOSFET 32 will begin to turn on, causing V to return to 2V volts.
  • Diode-connected MOS- FET 52 serves a purpose similar to that of MOSFET 22, previously described, and is connected between ground and node 48 to prevent V from being capacitively held at voltage greater than V volts.
  • the impedance of MOSFET 52 must be sufficiently large that V,
  • FIG. 2 Another feature illustrated in FIG. 2 is the utilization of feedback from output circuit 14 to reference circuit 12 so that an excursion of V about 2V volts causes an amplified corrective response by V MOS- FET 46 is connected between the drain of MOSFET 18 and the source of MOSFET l6, and has its gate electrode connected to the gate of MOSFET 32, which is at V volts. lf MOSFET 46 is on, and has a sufficiently large geometry ratio, then as V, increases toward V V follows 2 V voltage drops below V until MOS- F ET 18 starts to turn on. V then follows one V drop below V and attains equilibrium at 2V volts. Note that in the embodiment shown in FIG.
  • V the voltage V, is independent of output voltage V
  • V increases to a value greater than 2V volts
  • V increases above V volts, thereby turning MOSFET 32 on harder and then MQSFET 30 turns off, and V is discharged back toward 2V volts through MOSFET 32.
  • MOSFET 52 causes MOSFET 46 to turn off, and V increases, thereby turning MOSFET 30 on much more strongly, which results in increased current through MOSFET 30, which increases V to approximately ZV volts.
  • MOSFET 46 and the feedback connection from the gate thereof to the gate of MOSFET 32 may be included or excluded, depending on the desired characteristics of V
  • various geometry ratios may be chosen for the MOSFETs, depending on the desired characteristics of V in summary, the present invention provides a MOS voltage regulator circuit which produces a regulated voltage which tracks with the MOS threshold voltage V and is much less dependent on power supply variations than prior art MOS regulator circuits.
  • the power dissipation of the regulator circuit is very low compared to prior art MOS voltage regulator circuits, and the flexibility of designing the geometry ratios to obtain various characteristics of the regulated voltage is much greater than for prior art MOS voltage regulators.
  • a reference circuit connected to an internal reference node for producing an internal reference voltage thereon;
  • said first reference circuit including the first circuit means responsive to the internal reference voltage connected to the internal reference node, second circuit means connected to the internal reference node for controlling the internal reference voltage thereon, and a first field-effect transistor having its gate connected to said first circuit means and its source connected to said second power supply conductor and its drain connected to said second circuit means, said output circuit including pull-up circuit means connected to the first power supply, the internal reference node of the reference circuit, and the output node for tending to increase the magnitude of the regulated output voltage, and pull-down circuit means connected to the output node and the second power supply conductor for tending to reduce the magnitude of the regulated output voltage.
  • the field-effect transistor circuit as recited in claim 1 further including third circuit means connected to the gate of said first field-effect transistor and the second power supply for discharging excess charge capacitively stored on the gate of said first field-effect transistor.
  • said field-effect transistor circuit as recited in claim 1 wherein said first circuit means include at least two diode-connected field-effect transistors coupled in series, one having its gate and drain-connected to the internal reference node, and another having its source connected to the gate of said first field-effect transistor.
  • the field-effect transistor circuit as recited in claim 13 wherein said pull-down circuit means comprise a sixth field-effect transistor having its source connected to the second power supply conductor and its drain connected to the output node, and at least two diode-connected field-effect transistors connected in series, for biasing the gate electrode of said sixth fieldeffect transistor one having its source connected to the gate of said sixth field-effect transistor and another having its gate and drain connected to the output node.
  • a field-effect transistor regulator circuit coupled to first and second power supplies for producing a regulated voltage at an output node including a reference circuit connected to an internal reference node for producing an internal reference voltage thereon, an output circuit coupled to said reference circuit and to the output node for producing the regulated voltage at the output node, the output circuit including a pull-up fieldeffect transistor coupled to the first power supply, the internal reference node of the reference circuit, and the output node for tending to increase the regulated output voltage to one field-effect transistor threshold voltage drop from the second power supply voltage, and a pull-down field-effect transistor coupled to the output node and the second power supply for tending to reduce the regulated output voltage to one fieldeffect transistor threshold voltage drop from a second power supply voltage, the improvement comprising:
  • said first electron control device being coupled between said internal reference node and said second power supply conductor
  • said second electron control device being coupled between said first power supply conductor and said internal reference node
  • said third electron control device being coupled between said internal reference node and a control electrode of said first electron control device.
  • a field-effect transistor regulator circuit connected to first and second power supply conductors for producing a regulated voltage at an output node including a reference circuit connected to an internal reference node for producing an internal reference voltage thereon, an output circuit connected to said reference circuit and to the output node for producing the regulated voltage at the output node, the output circuit including a pull-up field-effect transistor coupled to the first power supply conductor, the internal reference node of the reference circuit, and the output node for tending to increase the regulated output voltage to one field-effect transistor threshold voltage drop from the second power supply conductor, and a pull-down fieldeffect transistor coupled to the output node and to the second power supply conductor for tending to reduce the regulated output voltage to one field effect transistor threshold voltage drop from the second power supply conductor, the improvement comprising:

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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
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Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
US3975649A (en) * 1974-01-16 1976-08-17 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
DE2620187A1 (de) * 1975-05-09 1976-11-18 Ncr Co Monostabile multivibratorschaltung
DE2643677A1 (de) * 1975-10-02 1977-04-07 Rca Corp Stromspiegelverstaerker
US4020367A (en) * 1975-05-28 1977-04-26 Hitachi, Ltd. Constant-current circuit
US4031456A (en) * 1974-09-04 1977-06-21 Hitachi, Ltd. Constant-current circuit
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
DE2757464A1 (de) * 1976-12-22 1978-06-29 Rca Corp Verstaerker
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
US4197511A (en) * 1978-12-18 1980-04-08 Bell Telephone Laboratories, Incorporated Linear load MOS transistor circuit
US4199693A (en) * 1978-02-07 1980-04-22 Burroughs Corporation Compensated MOS timing network
US4205263A (en) * 1976-08-03 1980-05-27 Tokyo Shibaura Electric Co., Ltd. Temperature compensated constant current MOS field effective transistor circuit
US4298811A (en) * 1979-07-20 1981-11-03 Signetics Corporation MOS Voltage divider
US4300061A (en) * 1979-03-15 1981-11-10 National Semiconductor Corporation CMOS Voltage regulator circuit
US4305011A (en) * 1979-01-26 1981-12-08 Commissariat A L'energie Atomique Reference voltage generator
US4306185A (en) * 1980-07-01 1981-12-15 Motorola, Inc. Breakdown voltage protection circuit
US4309627A (en) * 1978-04-14 1982-01-05 Kabushiki Kaisha Daini Seikosha Detecting circuit for a power source voltage
WO1982001776A1 (en) * 1980-11-17 1982-05-27 Inc Motorola Bias current reference circuit
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
FR2510781A1 (fr) * 1981-07-31 1983-02-04 Hitachi Ltd Generateur de tension de reference
US4375596A (en) * 1979-11-19 1983-03-01 Nippon Electric Co., Ltd. Reference voltage generator circuit
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic
US4446383A (en) * 1982-10-29 1984-05-01 International Business Machines Reference voltage generating circuit
US4473794A (en) * 1982-04-21 1984-09-25 At&T Bell Laboratories Current repeater
US4616172A (en) * 1983-12-29 1986-10-07 At&T Bell Laboratories Voltage generator for telecommunication amplifier
US4634959A (en) * 1985-12-16 1987-01-06 Gte Communication Systems Corp. Temperature compensated reference circuit
US4645998A (en) * 1984-10-26 1987-02-24 Mitsubishi Denki Kabushiki Kaisha Constant voltage generating circuit
US4694199A (en) * 1981-09-28 1987-09-15 Siemens Aktiengesellschaft Circuit arrangement for producing a fluctuation-free d-c voltage level of a d-c voltage
US4736154A (en) * 1987-09-03 1988-04-05 National Semiconductor Corporation Voltage regulator based on punch-through sensor
US4814686A (en) * 1986-02-13 1989-03-21 Kabushiki Kaisha Toshiba FET reference voltage generator which is impervious to input voltage fluctuations
US4868416A (en) * 1987-12-15 1989-09-19 Gazelle Microcircuits, Inc. FET constant reference voltage generator
US4943945A (en) * 1989-06-13 1990-07-24 International Business Machines Corporation Reference voltage generator for precharging bit lines of a transistor memory
US5029283A (en) * 1990-03-28 1991-07-02 Ncr Corporation Low current driver for gate array
US5243231A (en) * 1991-05-13 1993-09-07 Goldstar Electron Co., Ltd. Supply independent bias source with start-up circuit
US5434533A (en) * 1992-04-06 1995-07-18 Mitsubishi Denki Kabushiki Kaisha Reference voltage generating circuit temperature-compensated without addition of manufacturing step and semiconductor device using the same
US5479093A (en) * 1992-05-21 1995-12-26 Samsung Electronics Co., Ltd. Internal voltage generating circuit of a semiconductor device
US5892390A (en) * 1995-07-11 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Internal power supply circuit with low power consumption
US6201434B1 (en) * 1997-11-28 2001-03-13 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having an oscillation circuit using reference current source independent from influence of variation of power supply voltage and threshold voltage of transistor
US6798278B2 (en) * 2000-06-23 2004-09-28 Ricoh Company, Ltd. Voltage reference generation circuit and power source incorporating such circuit
CN103677032A (zh) * 2013-10-25 2014-03-26 苏州贝克微电子有限公司 一种基于击穿现象传感器的稳压器
US20180117601A1 (en) * 2015-04-24 2018-05-03 Alfa Laval Corporate Ab Centrifugal separator and thereto related methods

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Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975649A (en) * 1974-01-16 1976-08-17 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means
US4031456A (en) * 1974-09-04 1977-06-21 Hitachi, Ltd. Constant-current circuit
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
DE2620187A1 (de) * 1975-05-09 1976-11-18 Ncr Co Monostabile multivibratorschaltung
US4020367A (en) * 1975-05-28 1977-04-26 Hitachi, Ltd. Constant-current circuit
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
DE2643677A1 (de) * 1975-10-02 1977-04-07 Rca Corp Stromspiegelverstaerker
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
US4205263A (en) * 1976-08-03 1980-05-27 Tokyo Shibaura Electric Co., Ltd. Temperature compensated constant current MOS field effective transistor circuit
DE2757464A1 (de) * 1976-12-22 1978-06-29 Rca Corp Verstaerker
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
US4199693A (en) * 1978-02-07 1980-04-22 Burroughs Corporation Compensated MOS timing network
US4309627A (en) * 1978-04-14 1982-01-05 Kabushiki Kaisha Daini Seikosha Detecting circuit for a power source voltage
US4197511A (en) * 1978-12-18 1980-04-08 Bell Telephone Laboratories, Incorporated Linear load MOS transistor circuit
US4305011A (en) * 1979-01-26 1981-12-08 Commissariat A L'energie Atomique Reference voltage generator
US4300061A (en) * 1979-03-15 1981-11-10 National Semiconductor Corporation CMOS Voltage regulator circuit
US4298811A (en) * 1979-07-20 1981-11-03 Signetics Corporation MOS Voltage divider
US4375596A (en) * 1979-11-19 1983-03-01 Nippon Electric Co., Ltd. Reference voltage generator circuit
US4306185A (en) * 1980-07-01 1981-12-15 Motorola, Inc. Breakdown voltage protection circuit
US4342926A (en) * 1980-11-17 1982-08-03 Motorola, Inc. Bias current reference circuit
WO1982001776A1 (en) * 1980-11-17 1982-05-27 Inc Motorola Bias current reference circuit
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic
FR2510781A1 (fr) * 1981-07-31 1983-02-04 Hitachi Ltd Generateur de tension de reference
US4694199A (en) * 1981-09-28 1987-09-15 Siemens Aktiengesellschaft Circuit arrangement for producing a fluctuation-free d-c voltage level of a d-c voltage
US4473794A (en) * 1982-04-21 1984-09-25 At&T Bell Laboratories Current repeater
US4446383A (en) * 1982-10-29 1984-05-01 International Business Machines Reference voltage generating circuit
US4616172A (en) * 1983-12-29 1986-10-07 At&T Bell Laboratories Voltage generator for telecommunication amplifier
US4645998A (en) * 1984-10-26 1987-02-24 Mitsubishi Denki Kabushiki Kaisha Constant voltage generating circuit
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JPS4977159A (enrdf_load_stackoverflow) 1974-07-25

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