US3794861A - Reference voltage generator circuit - Google Patents

Reference voltage generator circuit Download PDF

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Publication number
US3794861A
US3794861A US00221731A US3794861DA US3794861A US 3794861 A US3794861 A US 3794861A US 00221731 A US00221731 A US 00221731A US 3794861D A US3794861D A US 3794861DA US 3794861 A US3794861 A US 3794861A
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transistor
coupled
emitter
base
collector
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US00221731A
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J Bernacchi
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Advanced Memory Systems Inc
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Advanced Memory Systems Inc
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • ABSTRACT A reference voltage generator circuit particularly suited for current source circuits having low temperature sensitivity and low voltage sensitivity.
  • the circuit is comprised of a reference voltage circuit having low voltage sensitivity and relatively high temperature sensitivity, with an additional feedback circuit for feeding back a compensating temperature sensitivity to result in a low overall sensitivity.
  • the temperature sensitivity of the reference generator is predominately due to the temperature sensitivity of a base to emitter diode voltage drop which may be selectively controlled or substantially cancelled by the proper selection of resistors in the feedback circuit so as to feed back a temperature sensitive component.
  • the feedback signal is dependent upon the difference in the base to emitter voltage drops in two transistors conducting different magnitudes of current, and is similarly amplified so as to effectively allow cancellation of the basic reference generator sensitivity.
  • a typical current sink may be comprised of an NPN transistor with the collector being the current sink connection, the emitter being coupled to the negative power supply line through a fixed resistor, and the base coupled to a reference voltage, e.g., a fixed voltage with respect to the negative terminal.
  • a reference voltage e.g., a fixed voltage with respect to the negative terminal.
  • One prior art reference circuit which exhibits a relatively low temperature sensitivity is comprised of a pair of transistors and a pair of resistors.
  • the first transistor has its collector coupled to one power supply terminal through one of the resistors and its emitter coupled through the other supply terminal through the second resistor.
  • the second transistor has its collector coupled to one power supply terminal, its base coupled to the collector of the first transistor, and its emitter coupled to the base of the first transistor and further to the reference voltage terminal so as to provide the output voltage and current.
  • This circuit is relatively temperature insensitive since the base to emitter diode drops effecting the output reference voltage are generally small compared to the power supply voltage.
  • the reference voltage is basically determined by the collector voltage of the first transistor, which is basically proportional to the power supply voltage. Consequently, the reference voltage generated by such circuits is highly power supply voltage dependent, and therefore may only be used in circuits when the power supply voltage will be maintained within reasonably narrow limits.
  • Another type of prior art reference generator circuit uses the base to emitter voltage of a first transistor as a reference voltage, which is amplified in proportion so as to provide the desired fixed reference.
  • the base emitter voltage of a transistor is relatively power supply voltage independent, and therefore such circuits may operate over a wide input voltage range.
  • the base to emitter voltage is highly temperature dependent, and therefore the power supply voltage insensitivity is achieved at the expense of temperature range capability.
  • the circuits which utilize such reference voltages will themselves often ex-- hibit certain temperature characteristics, and therefore may more desirably perform if the reference voltage is made temperature sensitive in a predetermined man ner.
  • a reference voltage generator circuit particularly suited for current sourced circuits having low temperature sensitivity and low power supply voltage sensitivity.
  • the circuit is comprised of a reference voltage circuit having low voltage sensitivity and relatively high temperature sensitivity, with an additional feedback circuit for feeding back a compensating temperature sensitivity to result in a low overall sensitivity.
  • the temperature sensitivity of the reference generator is predominately due to the temperature sensitivity of a base to emitter diode voltage drop, which may be selectively controlled or substantially cancelled by the proper selectionof resistors in the feedback circuit so as to feed back a predetermined temperature sensitive component.
  • the primary factor determining the reference voltage output of the circuit is the base emitter diode drop in a particular transistor, which is multiplied by a ratio of resistors selected so as to achieve the basic desired reference voltage.
  • the feedback signal is dependent upon the difference in the base to emitter voltage drop in two transistors conducting different magnitudes of current, and is amplified by a second ratio of resistors so as to allow the control or cancellation of the basic reference generator sensitivity, dependent upon the selection of various resistors used in the circuit. Consequently, by maintaining a predetermined ratio of resistors, as may be easily achieved in integrated circuit fabrication, the desired temperature sensitivity of the reference voltage generated thereby may be achieved.
  • the circuit of the present invention exhibits no primary power supply voltage dependence, the power supply voltage only indirectly effecting the reference voltage generated thereby as a result of the net change in base to emitter voltage drops caused by a change of current through the various transistors in response to the power supply voltage variation.
  • FIG. 1 a schematic diagram for typical current sources for current sourced bipolar circuits may be seen.
  • the word source as used herein is used in the general sense to indicate both sources and sinks, the circuit shown in FIG. 1 perhaps more specifically representing typical current sinks.
  • Each current source is comprised of a transistor with a resistor in the emitter circuit.
  • a reference voltage is applied between terminals 20 and 22, with terminal 22 being connected to the bases of the transistors in each current source, such as transistors 06 and Q7.
  • Each of the transistors Q6 and Q7 have resistors R6 and R7 respectively coupled between their emitters and terminal 20.
  • each transistor provides the current source connection for the remaining circuitry in which the current sources are used (not shown). It may be seen that the voltage across each resistor is equal to the voltage on terminal 22 (VREF) minus the base to emitter voltage drop in the associated transistor (VBE).
  • each resistor current in each resistor is equal to (VREF VBE)/R where R is the value of the particular resistor.
  • the base current of each transistor is generally relatively small, and therefore the collector current will be. approximately equal to the emitter current. Consequently, by way of example, the collector current of the first current source [6 equals (VREF VBE6)/-R6.
  • the current generated as. a re-' sult of the reference voltage applied to terminal 22 is a function of the emitter resistor of a particular current source and is also highly dependent upon the reference voltage applied to the current. Furthermore, in terms of variation'with temperature, it is apparent that the current will. change substantially with changes in the resistors with temperature and with changes in the base to emitter voltage drop in the transistor.
  • the circuit is basically a three terminal circuit, with'terminal 20 being connected to the low voltage power supply terminal VEE, which for purposes of reference will be assumed to be ground. This terminal also provides one connection to thecurrent sources, and therefore is identified with the same numeral as the equivalent terminal in FIG. 1.
  • terminal 22 is the output terminal for the reference generator of the present invention and is identified in common with the VREF terminal of the circuit of FIG. 1.
  • Terminal 24 is connected to the positive power supply terminal and is maintained at a voltage identified as VCC.
  • Resistor R3 provides the base current to transistors Q2 and Q3, and further provides collector current for transistor 01.
  • the transistors Q2 and Q3 are therefore conducting, and thereference voltage output on terminal 22 is equal to the voltage of the emitter of transistor Q2 plus the base to emitter drop of transistor 02 minus the base to emitter voltage drop of transistor 03.
  • VREF equals (R1 R2) .VBEQl/RZ I VBEQ2 VBEQ3.
  • the reference voltage is substantially directly proportional to the base to emitter diode voltage of transistor Q1, and therefore, except for the effects of transistors Q4 and Q5, will exhibit substantially the entire temperature sensitivity of that base to emitter voltage drop.
  • Q5 has its base connected to its collector and is connected through resistor R5 to the emitter of transistor 03.
  • the emitter of O5 is connected to ground.
  • 05 functionsas a diode with a diode forward conduction voltage drop equal to the base to emitter voltage drop of the transistor.
  • the base of transistor O4 is also connected to the base of transistor Q5 buthasaresis tor R4 coupling its emitter to the ground terminal.
  • Resistor R4 is a relatively low valued resistor and is specifically chosen so as to limit the collector and emitter currents of transistors Q4.
  • the value of the forward biased temperature coefficient of a junction diode such as a silicon or germanium diode is current dependent. (integrated circuits are comprised .of silicon transistors and thus the base to emitter voltage of such transistors exhibits the characteristic silicon diode temperature coefficient.) As the diode forward conduction current becomes larger, the absolute value of this coefficient becomes smaller. (The sign of the coefficient of VBE is actuallynegative.) Therefore, since the emitter current in O4 is smaller than that of Q5, the voltage on resistor R4 increases rapidly with increasing temperature. Therefore, the current I4 has a positive temperature coefficient, with a value depending on the values of resistors R4 and R5.
  • the selection of resistors R4 and R5 will determine the difference between VBEQ4 and VBEQS.
  • the selection of R4 in proportion to R1 and R2 determines the multiplying factor for this difference in emitter to base voltage temperature coefficient so as to provide a temperature sensitivity of opposite polarity as to the otherwise predominate temperature sensitivity due to VBEQl.
  • the primary term determining the reference voltage is dependent on VB EQl
  • the term allowing for correction of the temperature sensitivity is proportional tothe difference intwo base emitter voltages, and though the temperature sensitivity of the base to emitter voltages is highly current dependent, the absolute value of the base to emitter voltage is characteristically only slightly current dependent.
  • VBEQ4 VBEQS is, in general, a very small number in comparison to VBEQl, though it does exhibit the highly desired temperature sensitivity. Consequently, the inclusion of the circuitry comprising transistor Q4 and transistor Q5 and resistors R4 and R5 will only require a moderate change to resistors R1 and/or R2 to achieve the desired reference voltage, but the proper cuits, are well within the spirit and scope of the invention.
  • a reference generator circuit having a power input terminal, a reference voltage output terminal and a common input-output terminal comprising; a diode means, first and second transistors of a first conductivity type, first, second and third resistors, first, second and third current supplying means and an output means, said first transistor having its emitter coupled to said common input-output terminal, its collector coupled to said power input terminal through said first cur rent supplying means, and its base coupled to its emitter through said first resistor, said second current supplying means being coupled to said base of said first transistor through said second resistor and being respon sive to the collector voltage on said first transistor, said diode means being coupled between said third current supplying means and said common input-output terminal, said second transistor having its emitter coupled to said common input-output terminal through said third resistor, its base coupled to said diode means, and its collector coupled to at least one of said first and second resistors, said output meansbeing coupled between said second current supplying means and said output terminal and being a means for providing an proportion
  • the reference voltage would normally have a temperature sensitivity of approximately the temperature sensitivity of the base to emitter diode drop multiplied by the value of (R1 R2)/R2, this temperature sensitivity may be reduced to approximately that of only a single base to emitter diode drop so as to compensate for the base to emitter voltage drop in the current sources of FIG. 1, or to provide such other controlled and predetermined tempera ture sensitivity for the reference voltage as required to enhance the operation of the circuitry connected to such reference voltage generator or a broader temperature range.
  • the reference voltage is substantially power supply voltage independent, varying slightly as a result of variation primarily in the base to emitter voltages of the various transistors as a result of a change in current there-through caused by the change in power supply voltage.
  • the present invention is ideally suited for fabrication in integrated circuit form, through fabrication with discrete components and/or semiconductor devices other than silicon devices or of devices of the opposite conductivity type (e.g., PNP devices), as well as fabrication with different coupling ciroutput voltage responsive to the voltage on said second resistor.
  • diode means is a third transistor of saidfirst conductivity type, said third transistor having its emitter coupled to said common input-output terminal, its 001- lector coupled to said third current supplying means and its base coupled to its collector.
  • said third current supplying means comprises a fourth resistor coupled between said reference voltage output terminal and said collector of said third transistor.
  • said first current supplying means comprises a resistor coupled between said power input terminal and the collector of said first transistor.
  • said second current supplying means comprises a fourth transistor of said first conductivity type, said fourth transistor having its emitter coupled to said second resistor, its collector coupled to said power input terminal and its base coupled to the collector of said-first transistor.
  • said output means comprises a fifth transistor of said first conductivity type having its base coupled to the base of said fourth transistor, its collector coupled to said power input terminal and said emitter coupled to said reference voltage output terminal.
  • a reference generator circuit having a power input terminal, a common input-output terminal and a reference voltage output terminal comprising first, second, third, fourth and fifth transistors of a first conductivity type, each having an emitter, a base and a collector, and first, second, third, fourth and fifth resistors, said first transistor having its said emitter coupled to said common input-output terminal, its said collector coupled to said power input terminal through said'first resistor, and its said base coupled to its said emitter through said second resistor, said second transistor having its said collector coupled to said power input terminal, its said base coupled to said collector of said first transistor, and its said emitter coupled to said base of said first transistor through said third resistor, said third transistor having its said collector coupled to said power input terminal, its said base coupled to said base of said second transistor, and its said emitter coupled to said reference voltage output terminal, said base of said fourth and fifth transistors being coupled to said collector of said fourth transistor and to said reference voltage output terminal through said fourth resistor, said emitter of said fourth transistor being coupled to said common input-
  • a compensated reference voltage circuit comprising:
  • a reference voltage circuit means having at least a first transistor with an emitter, a base and a collector, said reference voltage circuit means also having means coupled to said emitter, said base and said collector for biasing said first transistor into conduction, said reference voltage circuit means being a means for presenting a reference voltage responsive to the base emitter voltage of said first transistor;
  • a compensating circuit means coupled to said reference voltage circuit means and having at least sec- 0nd and third transistors each having an emitter, a base and a collector, said compensating circuit means including means for biasing said second and third transistors into different levels of conduction, said compensating circuit means being a means for providing a compensation signal responsive to the difference in the base to emitter voltages of said second and third transistors, said reference voltage circuit means further being responsive to said compensation signal to provide a reference voltage having a predetermined temperature variation.
  • said compensating circuit further includes a first resistor, said base of said second transistor being coupled to said base and said collector of said third transistor, and said emitter of said second transistor being coupled through said first resistor to said emitter of said third transistor, the current'in said collector of said second transistor providing said compensation signal.

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US00221731A 1972-01-28 1972-01-28 Reference voltage generator circuit Expired - Lifetime US3794861A (en)

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886435A (en) * 1973-08-03 1975-05-27 Rca Corp V' be 'voltage voltage source temperature compensation network
US3893018A (en) * 1973-12-20 1975-07-01 Motorola Inc Compensated electronic voltage source
US3908162A (en) * 1974-03-01 1975-09-23 Motorola Inc Voltage and temperature compensating source
US4058760A (en) * 1976-08-16 1977-11-15 Rca Corporation Reference potential generators
US4059793A (en) * 1976-08-16 1977-11-22 Rca Corporation Semiconductor circuits for generating reference potentials with predictable temperature coefficients
US4061959A (en) * 1976-10-05 1977-12-06 Rca Corporation Voltage standard based on semiconductor junction offset potentials
US4100478A (en) * 1977-02-28 1978-07-11 Burroughs Corporation Monolithic regulator for CML devices
US4100477A (en) * 1976-11-29 1978-07-11 Burroughs Corporation Fully regulated temperature compensated voltage regulator
FR2465355A1 (fr) * 1979-06-28 1981-03-20 Rca Corp Circuit generateur de tension de reference de bande interdite
US4280090A (en) * 1980-03-17 1981-07-21 Silicon General, Inc. Temperature compensated bipolar reference voltage circuit
EP0039178A1 (de) * 1980-04-18 1981-11-04 Fujitsu Limited Integrierte Schaltung zum Erzeugen einer Referenzspannung
US4346343A (en) * 1980-05-16 1982-08-24 International Business Machines Corporation Power control means for eliminating circuit to circuit delay differences and providing a desired circuit delay
US4362984A (en) * 1981-03-16 1982-12-07 Texas Instruments Incorporated Circuit to correct non-linear terms in bandgap voltage references
US4383216A (en) * 1981-01-29 1983-05-10 International Business Machines Corporation AC Measurement means for use with power control means for eliminating circuit to circuit delay differences
US4590419A (en) * 1984-11-05 1986-05-20 General Motors Corporation Circuit for generating a temperature-stabilized reference voltage
US4734593A (en) * 1986-10-29 1988-03-29 Advanced Micro Devices, Inc. CML bias generator
US4810962A (en) * 1987-10-23 1989-03-07 International Business Machines Corporation Voltage regulator capable of sinking current
US4897560A (en) * 1987-05-09 1990-01-30 Fujitsu Limited Semiconductor integrated circuit with reduced power consumption
US4945260A (en) * 1989-04-17 1990-07-31 Advanced Micro Devices, Inc. Temperature and supply compensated ECL bandgap reference voltage generator
CN102541133A (zh) * 2011-05-11 2012-07-04 电子科技大学 一种全温度范围补偿的电压基准源

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3286124A (en) * 1962-10-29 1966-11-15 Sony Corp Stabilized voltage source for transistorized circuits
US3286151A (en) * 1963-09-20 1966-11-15 Gen Electric Controlled rectifier current limit for d. c. motor
US3320439A (en) * 1965-05-26 1967-05-16 Fairchild Camera Instr Co Low-value current source for integrated circuits
US3401274A (en) * 1965-09-10 1968-09-10 Westinghouse Air Brake Co Fail-safe standard amplitude signal sources
US3402303A (en) * 1964-08-17 1968-09-17 Rca Corp Level sensitive switching circuit utilizing a zener diode for determining switching points and switching sensitivity
US3421102A (en) * 1965-06-10 1969-01-07 Tektronix Inc Direct coupled temperature compensated amplifier
US3519842A (en) * 1964-12-17 1970-07-07 Matsushita Electric Ind Co Ltd Voltage switching device
US3529178A (en) * 1966-06-22 1970-09-15 Johnson Service Co Variable signal detecting circuit
US3643151A (en) * 1969-09-17 1972-02-15 Matsushita Electric Ind Co Ltd Overcurrent proof constant voltage
US3657572A (en) * 1970-11-20 1972-04-18 Trw Inc Power converter with self-synchronization and bias
US3659121A (en) * 1970-11-16 1972-04-25 Motorola Inc Constant current source

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3286124A (en) * 1962-10-29 1966-11-15 Sony Corp Stabilized voltage source for transistorized circuits
US3286151A (en) * 1963-09-20 1966-11-15 Gen Electric Controlled rectifier current limit for d. c. motor
US3402303A (en) * 1964-08-17 1968-09-17 Rca Corp Level sensitive switching circuit utilizing a zener diode for determining switching points and switching sensitivity
US3519842A (en) * 1964-12-17 1970-07-07 Matsushita Electric Ind Co Ltd Voltage switching device
US3320439A (en) * 1965-05-26 1967-05-16 Fairchild Camera Instr Co Low-value current source for integrated circuits
US3421102A (en) * 1965-06-10 1969-01-07 Tektronix Inc Direct coupled temperature compensated amplifier
US3401274A (en) * 1965-09-10 1968-09-10 Westinghouse Air Brake Co Fail-safe standard amplitude signal sources
US3529178A (en) * 1966-06-22 1970-09-15 Johnson Service Co Variable signal detecting circuit
US3643151A (en) * 1969-09-17 1972-02-15 Matsushita Electric Ind Co Ltd Overcurrent proof constant voltage
US3659121A (en) * 1970-11-16 1972-04-25 Motorola Inc Constant current source
US3657572A (en) * 1970-11-20 1972-04-18 Trw Inc Power converter with self-synchronization and bias

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886435A (en) * 1973-08-03 1975-05-27 Rca Corp V' be 'voltage voltage source temperature compensation network
US3893018A (en) * 1973-12-20 1975-07-01 Motorola Inc Compensated electronic voltage source
US3908162A (en) * 1974-03-01 1975-09-23 Motorola Inc Voltage and temperature compensating source
US4058760A (en) * 1976-08-16 1977-11-15 Rca Corporation Reference potential generators
US4059793A (en) * 1976-08-16 1977-11-22 Rca Corporation Semiconductor circuits for generating reference potentials with predictable temperature coefficients
US4061959A (en) * 1976-10-05 1977-12-06 Rca Corporation Voltage standard based on semiconductor junction offset potentials
US4100477A (en) * 1976-11-29 1978-07-11 Burroughs Corporation Fully regulated temperature compensated voltage regulator
US4100478A (en) * 1977-02-28 1978-07-11 Burroughs Corporation Monolithic regulator for CML devices
FR2465355A1 (fr) * 1979-06-28 1981-03-20 Rca Corp Circuit generateur de tension de reference de bande interdite
US4280090A (en) * 1980-03-17 1981-07-21 Silicon General, Inc. Temperature compensated bipolar reference voltage circuit
EP0039178A1 (de) * 1980-04-18 1981-11-04 Fujitsu Limited Integrierte Schaltung zum Erzeugen einer Referenzspannung
US4362985A (en) * 1980-04-18 1982-12-07 Fujitsu Limited Integrated circuit for generating a reference voltage
US4346343A (en) * 1980-05-16 1982-08-24 International Business Machines Corporation Power control means for eliminating circuit to circuit delay differences and providing a desired circuit delay
US4383216A (en) * 1981-01-29 1983-05-10 International Business Machines Corporation AC Measurement means for use with power control means for eliminating circuit to circuit delay differences
US4362984A (en) * 1981-03-16 1982-12-07 Texas Instruments Incorporated Circuit to correct non-linear terms in bandgap voltage references
US4590419A (en) * 1984-11-05 1986-05-20 General Motors Corporation Circuit for generating a temperature-stabilized reference voltage
US4734593A (en) * 1986-10-29 1988-03-29 Advanced Micro Devices, Inc. CML bias generator
US4897560A (en) * 1987-05-09 1990-01-30 Fujitsu Limited Semiconductor integrated circuit with reduced power consumption
US4810962A (en) * 1987-10-23 1989-03-07 International Business Machines Corporation Voltage regulator capable of sinking current
US4945260A (en) * 1989-04-17 1990-07-31 Advanced Micro Devices, Inc. Temperature and supply compensated ECL bandgap reference voltage generator
CN102541133A (zh) * 2011-05-11 2012-07-04 电子科技大学 一种全温度范围补偿的电压基准源

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DE2260405A1 (de) 1973-08-02
DE2260405B2 (de) 1979-04-12

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