US3781648A - Temperature compensated voltage regulator having beta compensating means - Google Patents

Temperature compensated voltage regulator having beta compensating means Download PDF

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Publication number
US3781648A
US3781648A US00322329A US3781648DA US3781648A US 3781648 A US3781648 A US 3781648A US 00322329 A US00322329 A US 00322329A US 3781648D A US3781648D A US 3781648DA US 3781648 A US3781648 A US 3781648A
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terminal
resistive impedance
impedance means
coupled
base
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Expired - Lifetime
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US00322329A
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English (en)
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W Owens
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Fairchild Semiconductor Corp
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Fairchild Camera and Instrument Corp
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • ABSTRACT A temperature compensated voltage regulator circuit having a resistive impedance of a particular value disposed in the base circuit of the first of two cascaded transistor elements to provide compensation for possi' ble beta (B) variations incurred as a result of process variables.
  • the present invention relates generally to reference voltage supply circuitry for integrated circuit applications and more particularly to voltage regulator circuitry for temperature and voltage compensated emitter coupled logic (TVECL) and the like, such circuitry including means for compensating for beta (B) variations incurred as a result of semiconductor process variables.
  • TVECL temperature and voltage compensated emitter coupled logic
  • the bias network be capable of providing a reference voltage that is pre dictable and constant under all adverse conditions, i.e., the output voltage should be invariant as a function of supply voltage, ambient temperature or semiconductor parameters.
  • prior art temperature compensated voltage regulators have long been provided with means to compensate for temperature and voltage variations, no means has heretofore been provided to compensate for V variations and base current (I,,) variations resulting from processing variables.
  • the temperature compensating principle utilized in TVECL drivers is based upon the fact that two transistors operating at different current densities have different base-to-emitter voltage (V temperature coefficients, i.e., the rate of change of base-to-emitter forward voltage versus temperature is different for the two devices, and by coupling the two devices together in a certain manner their differences can be utilized to cancel the temperature coefficient of a third device.
  • V temperature coefficients i.e., the rate of change of base-to-emitter forward voltage versus temperature is different for the two devices, and by coupling the two devices together in a certain manner their differences can be utilized to cancel the temperature coefficient of a third device.
  • V temperature coefficients i.e., the rate of change of base-to-emitter forward voltage versus temperature is different for the two devices, and by coupling the two devices together in a certain manner their differences can be utilized to cancel the temperature coefficient of a third device.
  • the previous assumption that runto-run variations in V could be compensated for by the same
  • the circuit of the present invention includes a first terminal for receiving a first bias potential; a second terminal for receiving a second bias potential; an output terminal at which a reference potential is to be developed; a first resistor coupling the first terminal to the output terminal; a second resistor and a forward biased diode forming a first series circuit coupling the output terminal to the second terminal; a third resistor, a first transistor having a base, an emitter and a collector, and a fourth resistor forming a second series circuit coupling the output terminal to the second terminal; a fifth resistor coupling the base of the first transistor to the junction of the second resistor and the diode; and a second transistor having a base coupled to the collector of the first transistor, a collector coupled to the output terminal, and an emitter coupled to the second terminal.
  • a primary advantage of the present invention is that the circuit may be utilized to provide a reference voltage which is predictable even though manufacturing process variables cause the various component elements to have slightly varying electrical characteristics.
  • FIG. 1 of the drawing schematically represents a simplified embodiment of a reference voltage supply circuit having beta (B) compensating means in accordance with the present invention.
  • FIG. 2 is a diagram schematically illustrating an alternative embodiment of a reference voltage supply circuit for developing a pair of reference voltages.
  • FIG. 1 a simplified schematic diagram representing an integrated circuit (IC) voltage regulator circuit in accordance with the present invention.
  • IC integrated circuit
  • the regulator circuit sometimes referrzd to as a bias driver, is designated generally by the numeral 10, and is provided with three external contact points including a first terminal 12 to which a positive supply voltage V is applied, a second terminal 14 to which a negative supply voltage V is applied, and an output terminal 16 from which the reference voltage V may be taken.
  • the circuit is basically a voltage dividing circuit including a passive resistance R connected between terminals 12 and I6, and in series with an active resistance means R connected between terminals 16 and 14.
  • the active resistance portion of the circuit includes means forming what may generally be viewed as three series circuits 18, 20 and 22 connected in parallel across the circuit nodes 24 and 26.
  • the first circuit 18 includes a second resistive impedance element represented by the resistor R and a uni-directional current conducting device such as the diode Q
  • the second circuit 20 includes a third resistive impedance element R an NPN transistor Q and a fourth resistive impedance element R
  • the collector 28 of transistor Q is connected to circuit node 4 by resistor R while its emitter 30 is connected to circuit node 26 by resistor R
  • the base 32 of transistor O is coupled to the junction of resistor R and the anode of diode Q represented by the node 34 by a resistive impedance element R having a particular value which will be discussed in detail below.
  • the third circuit 22 is formed pressed as by an NPN transistor Q whose collector 34 is coupled to circuit node 24 and whose emitter 36 is coupled to REF z z a an's b3 3
  • 2 1151 ina/ 4 B is the ratio of the collector current I to the emitter current I of transistor Q I 03 is the base current of transistor Q and V V M2 and V are the baseto-emitter voltages of I the transistors having like numbered subscripts.
  • Equation (3) with respect to the first variable base-to-emitter voltage V it can be shown that Y REF/ BE l msr sas This variation, of perhaps flOmV to i40mV in a typical circuit, is of course very significant when the reference voltage is used to drive an ECL gate since the noise margin of typical ECL integrated circuits is in the range of l00-l50mV.
  • Equation (1) can be rewritten as The change in V as a function of V and I, is then REF .z: a/ 4 d bz a o: dv R dl If V is invariant as a function of 1,, and V then dV may be set equal tozero and equation (1 1) may be solved for R to result in the expression z AVBES R3AID3 3 b2/( 3/ 4) ba
  • R the reference voltage variations caused by AV and Al can be eliminated.
  • typical values for R lie within the range of 2500 to 1,0009.
  • FIG. 2 To illustrate application of the present invention in a typical circuit for developing a pair of reference voltages, reference is made to FIG. 2 of the drawing.
  • V138 a d V three additional transistors Q Q and Q and an additional resistor R is added to the circuit of FIG. 1.
  • the collector 140 of transistor Q is coupled to terminal 112 while its base 142 is coupled to the lowergend of resistor R, at 144 and its emitter 146 is coupled to the collector 150 of transistor Q I
  • the base 152 of transistor Q is coupled to the junction 154 of the lower end-of resistor R and the collector 134 of transistor Q
  • the emitter 156 of transistor O is coupled to the upper end of resistor R
  • the collector 16 0 of transistor O is also coupled to circuit point l44, while its base 162 is coupled to circuit point 154, and its emitter 166 is coupled to the upper end Of resistor R
  • the reference voltage V,,, is taken at terminal 170 and the reference voltage V is taken at terminal 180.
  • the AV will be reflected approximately equal to AV AV At the usual current levels m am 20-30mv.
  • equation (20) can be realized.
  • the R can be further tailored to cancel the base current loading effects on R or R,. if the emitter currents of Q and Q are equal and much greater than I and if R equals R, then AI R will be totally eliminated, and AI R, will be reduced by 50 percent.
  • a temperature compensated voltage regulator circuit including beta compensating means, comprising: a first terminal for receiving a first bias potential;
  • first resistive impedance means coupling said first terminal to said output terminal
  • a third resistive impedance means a first transistor device having a base, an emitter and a collector, and a fourth resistive impedance means forming a second series circuit coupling said output terminal to said second terminal;
  • a fifth resistive impedance means coupling the base of said first transistor device to the junction of said second resistive impedance means and said diode means;
  • a second transistor device having a base coupled to the collector of said first transistor device, a collector coupled to said output terminal and an emitter coupled to said second terminal.
  • R is the resistive impedance of said fourth impedance means
  • AV is the base-emitter forward voltage variation of said second transistor device
  • Al is the base current variation of said first transistor device
  • Al is the base current variation of said second transistor device.
  • a temperature compensated voltage regulator circuit including beta compensating means comprising:
  • a first resistive impedance means coupling said first terminal to said output terminal
  • a first transistor device having a first base coupled to the junction of said second resistive impedance means and said diode means by said third resistive impedance means, a first collector coupled to said output terminal by said fourth resistive impedance means, and a first emitter coupled to said second terminal by said fifth resistive impedance means;
  • a second transistor device having a second base coupled to said first collector, a second collector coupled to said output terminal, and a second emitter coupled to said second terminal.
  • a temperature compensated voltage regulator circuit including beta compensating means comprising:
  • a first transistor device having a first base coupled to said first terminal by said first resistive impedance means, a first collector coupled to said first terminal and a first emitter coupled to said third terminal;
  • a second transistor device having a second base coupled to said first terminal by said second resistive impedance means, a second collector coupled to said third terminal and a second emitter coupled to said fourth terminal;
  • a third transistor device having a third base coupled to said second base, a third collector coupled to said first base and a third emitter;
  • a fourth transistor device having a fourth base coupled to the junction of said third impedance means and said diode means by said fifth impedance means, a fourth collector coupled to said third emitter by said fourth impedance means and a fourth emitter coupled to said second terminal by said sixth impedance means;
  • a fifth transitor device having a fifth base coupled to said fourth collector, a fifth collector coupled to said first terminal through said second resistive impedance means and a fifth emitter coupled to said second terminal.
  • R is the resistive impedance of said sixth impedance means
  • AV is the base-emitter forward voltage variation of said fifth transistor device
  • A1 is the base current variation of said fourth transistor device.
  • Al is the base current variation of said fifth transistor device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Logic Circuits (AREA)
US00322329A 1973-01-10 1973-01-10 Temperature compensated voltage regulator having beta compensating means Expired - Lifetime US3781648A (en)

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US (1) US3781648A (enrdf_load_stackoverflow)
JP (1) JPS5724571B2 (enrdf_load_stackoverflow)
CA (1) CA1027176A (enrdf_load_stackoverflow)
DE (1) DE2400516C2 (enrdf_load_stackoverflow)
GB (1) GB1434067A (enrdf_load_stackoverflow)
HK (1) HK1379A (enrdf_load_stackoverflow)

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893018A (en) * 1973-12-20 1975-07-01 Motorola Inc Compensated electronic voltage source
US3956661A (en) * 1973-11-20 1976-05-11 Tokyo Sanyo Electric Co., Ltd. D.C. power source with temperature compensation
US4059793A (en) * 1976-08-16 1977-11-22 Rca Corporation Semiconductor circuits for generating reference potentials with predictable temperature coefficients
US4063149A (en) * 1975-02-24 1977-12-13 Rca Corporation Current regulating circuits
FR2359456A1 (fr) * 1976-07-21 1978-02-17 Gen Electric Regulateur de tension pour circuits integres
US4091321A (en) * 1976-12-08 1978-05-23 Motorola Inc. Low voltage reference
US4182962A (en) * 1976-10-16 1980-01-08 Tokyo Shibaura Electric Co., Ltd. Semiconductor temperature compensation circuit
US4217539A (en) * 1977-12-14 1980-08-12 Sony Corporation Stabilized current output circuit
FR2454651A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Generateur de tension constante pour circuits integres
US4277739A (en) * 1979-06-01 1981-07-07 National Semiconductor Corporation Fixed voltage reference circuit
US4319180A (en) * 1979-06-27 1982-03-09 Tokyo Shibaura Denki Kabushiki Kaisha Reference voltage-generating circuit
WO1982002964A1 (en) * 1981-02-20 1982-09-02 Inc Motorola Variable temperature coefficient level shifter
DE3213736A1 (de) * 1981-04-15 1982-12-16 Hitachi, Ltd., Tokyo Stromquelle und unter deren verwendung aufgebauter bezugsspannungsgenerator
US4380711A (en) * 1980-12-15 1983-04-19 Rockwell International Corporation Linearization circuit
US4414502A (en) * 1981-07-20 1983-11-08 Advanced Micro Devices, Inc. Current source circuit
US4460865A (en) * 1981-02-20 1984-07-17 Motorola, Inc. Variable temperature coefficient level shifting circuit and method
WO1985004043A1 (en) * 1984-03-01 1985-09-12 Advanced Micro Devices, Inc. Compensation current generator
US4554503A (en) * 1983-02-10 1985-11-19 U.S. Philips Corporation Current stabilizing circuit arrangement
US4590419A (en) * 1984-11-05 1986-05-20 General Motors Corporation Circuit for generating a temperature-stabilized reference voltage
US4675592A (en) * 1984-04-26 1987-06-23 Kabushiki Kaisha Toshiba Voltage output circuit
US4733160A (en) * 1985-09-17 1988-03-22 Siemens Aktiengesellschaft Circuit for generating a reference voltage having a predetermined temperature drift
US4843302A (en) * 1988-05-02 1989-06-27 Linear Technology Non-linear temperature generator circuit
US5130637A (en) * 1990-01-31 1992-07-14 Fujitsu Ltd. Constant voltage generating circuit
US5187395A (en) * 1991-01-04 1993-02-16 Motorola, Inc. BIMOS voltage bias with low temperature coefficient
US5258703A (en) * 1992-08-03 1993-11-02 Motorola, Inc. Temperature compensated voltage regulator having beta compensation
US5532578A (en) * 1992-05-30 1996-07-02 Samsung Electronics Co., Ltd. Reference voltage generator utilizing CMOS transistor
US6181121B1 (en) * 1999-03-04 2001-01-30 Cypress Semiconductor Corp. Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture
US20040061137A1 (en) * 2002-09-28 2004-04-01 Lee Kim Fung Integrated circuit beta compensator for external interface circuitry
US20070237207A1 (en) * 2004-06-09 2007-10-11 National Semiconductor Corporation Beta variation cancellation in temperature sensors
US20090091373A1 (en) * 2007-10-05 2009-04-09 Epson Toyocom Corporation Temperature-sensor circuit, and temperature compensated piezoelectric oscillator
US7826998B1 (en) 2004-11-19 2010-11-02 Cypress Semiconductor Corporation System and method for measuring the temperature of a device
US20150115912A1 (en) * 2013-10-25 2015-04-30 Seiko Instruments Inc. Reference voltage generator

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7512311A (nl) * 1975-10-21 1977-04-25 Philips Nv Stroomstabilisatieschakeling.
IT1210940B (it) * 1982-09-30 1989-09-29 Ates Componenti Elettron Circuito generatore di corrente costante, a bassa tensione di alimentazione, integrabile monoliticamente.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3114872A (en) * 1961-12-29 1963-12-17 Gen Electric Constant current source
US3538421A (en) * 1967-08-02 1970-11-03 Motorola Inc Temperature stabilized voltage regulator
US3617859A (en) * 1970-03-23 1971-11-02 Nat Semiconductor Corp Electrical regulator apparatus including a zero temperature coefficient voltage reference circuit
US3721893A (en) * 1972-05-30 1973-03-20 Motorola Inc Stable current reference circuit with beta compensation

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3956661A (en) * 1973-11-20 1976-05-11 Tokyo Sanyo Electric Co., Ltd. D.C. power source with temperature compensation
US3893018A (en) * 1973-12-20 1975-07-01 Motorola Inc Compensated electronic voltage source
US4063149A (en) * 1975-02-24 1977-12-13 Rca Corporation Current regulating circuits
FR2359456A1 (fr) * 1976-07-21 1978-02-17 Gen Electric Regulateur de tension pour circuits integres
US4059793A (en) * 1976-08-16 1977-11-22 Rca Corporation Semiconductor circuits for generating reference potentials with predictable temperature coefficients
US4182962A (en) * 1976-10-16 1980-01-08 Tokyo Shibaura Electric Co., Ltd. Semiconductor temperature compensation circuit
US4091321A (en) * 1976-12-08 1978-05-23 Motorola Inc. Low voltage reference
US4217539A (en) * 1977-12-14 1980-08-12 Sony Corporation Stabilized current output circuit
FR2454651A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Generateur de tension constante pour circuits integres
US4287467A (en) * 1979-04-20 1981-09-01 U.S. Philips Corporation Constant-voltage generator for integrated circuits
US4277739A (en) * 1979-06-01 1981-07-07 National Semiconductor Corporation Fixed voltage reference circuit
US4319180A (en) * 1979-06-27 1982-03-09 Tokyo Shibaura Denki Kabushiki Kaisha Reference voltage-generating circuit
US4380711A (en) * 1980-12-15 1983-04-19 Rockwell International Corporation Linearization circuit
WO1982002964A1 (en) * 1981-02-20 1982-09-02 Inc Motorola Variable temperature coefficient level shifter
US4460865A (en) * 1981-02-20 1984-07-17 Motorola, Inc. Variable temperature coefficient level shifting circuit and method
DE3213736A1 (de) * 1981-04-15 1982-12-16 Hitachi, Ltd., Tokyo Stromquelle und unter deren verwendung aufgebauter bezugsspannungsgenerator
US4414502A (en) * 1981-07-20 1983-11-08 Advanced Micro Devices, Inc. Current source circuit
US4554503A (en) * 1983-02-10 1985-11-19 U.S. Philips Corporation Current stabilizing circuit arrangement
WO1985004043A1 (en) * 1984-03-01 1985-09-12 Advanced Micro Devices, Inc. Compensation current generator
US4577296A (en) * 1984-03-01 1986-03-18 Advanced Micro Devices, Inc. Compensation current generator
US4675592A (en) * 1984-04-26 1987-06-23 Kabushiki Kaisha Toshiba Voltage output circuit
US4590419A (en) * 1984-11-05 1986-05-20 General Motors Corporation Circuit for generating a temperature-stabilized reference voltage
US4733160A (en) * 1985-09-17 1988-03-22 Siemens Aktiengesellschaft Circuit for generating a reference voltage having a predetermined temperature drift
US4843302A (en) * 1988-05-02 1989-06-27 Linear Technology Non-linear temperature generator circuit
US5130637A (en) * 1990-01-31 1992-07-14 Fujitsu Ltd. Constant voltage generating circuit
US5187395A (en) * 1991-01-04 1993-02-16 Motorola, Inc. BIMOS voltage bias with low temperature coefficient
US5532578A (en) * 1992-05-30 1996-07-02 Samsung Electronics Co., Ltd. Reference voltage generator utilizing CMOS transistor
US5258703A (en) * 1992-08-03 1993-11-02 Motorola, Inc. Temperature compensated voltage regulator having beta compensation
US6181121B1 (en) * 1999-03-04 2001-01-30 Cypress Semiconductor Corp. Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture
US20040061137A1 (en) * 2002-09-28 2004-04-01 Lee Kim Fung Integrated circuit beta compensator for external interface circuitry
US6812744B2 (en) * 2002-09-28 2004-11-02 Silicon Laboratories, Inc. Integrated circuit beta compensator for external interface circuitry
US20070237207A1 (en) * 2004-06-09 2007-10-11 National Semiconductor Corporation Beta variation cancellation in temperature sensors
US7461974B1 (en) 2004-06-09 2008-12-09 National Semiconductor Corporation Beta variation cancellation in temperature sensors
US7826998B1 (en) 2004-11-19 2010-11-02 Cypress Semiconductor Corporation System and method for measuring the temperature of a device
US20090091373A1 (en) * 2007-10-05 2009-04-09 Epson Toyocom Corporation Temperature-sensor circuit, and temperature compensated piezoelectric oscillator
US7755416B2 (en) * 2007-10-05 2010-07-13 Epson Toyocom Corporation Temperature-sensor circuit, and temperature compensated piezoelectric oscillator
US20150115912A1 (en) * 2013-10-25 2015-04-30 Seiko Instruments Inc. Reference voltage generator
US9804628B2 (en) * 2013-10-25 2017-10-31 Sii Semiconductor Corporation Reference voltage generator

Also Published As

Publication number Publication date
JPS49101852A (enrdf_load_stackoverflow) 1974-09-26
DE2400516A1 (de) 1974-07-11
CA1027176A (en) 1978-02-28
DE2400516C2 (de) 1983-10-20
HK1379A (en) 1979-01-12
JPS5724571B2 (enrdf_load_stackoverflow) 1982-05-25
GB1434067A (en) 1976-04-28

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