US3713051A - Microwave devices - Google Patents

Microwave devices Download PDF

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Publication number
US3713051A
US3713051A US00090655A US3713051DA US3713051A US 3713051 A US3713051 A US 3713051A US 00090655 A US00090655 A US 00090655A US 3713051D A US3713051D A US 3713051DA US 3713051 A US3713051 A US 3713051A
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microwave
permittivity
dielectric
pentoxide
dielectric material
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US00090655A
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English (en)
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R Kell
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General Electric Company PLC
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General Electric Company PLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/486—Fine ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2084—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure with dielectric resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines

Definitions

  • the component is formed of a ceramic material consisting of one or more alkaline earth metal zirconates, or zirconates and titanates,
  • the composition of the material being such that the atomic ratio of zirconium to titanium is not less than 80 20, that the total proportion of niobium pentoxide/tantalum pentoxide is in the range of 0.1 to 3.0 mole per cent of the total amount 01- the zirconate/titanate constituent, that it does not contain -talum pentoxide reduces the microwave losses, as
  • This invention relates to electrical devices of the kind designed for operation at microwave frequencies, that is to say frequencies in the range of 400 MHz to 30 GHz, for use for example in telecommunications equipment, and incorporating components formed of dielectric materials, wherein the response of the device is dependent upon the permittivity of the dielectric material.
  • the dielectric component is formed of a ceramic dielectric material consisting of at least one compound of the general formula A80 where A is a metal of the group consisting of barium, strontium and calcium and B is a metal of the group consisting of zirconium and titanium, the composition of the material being so chosen that the atomic ratio of zirconium to titanium is in the-range of 80 20 to 100 0, that it does not include significant amounts of both barium and titanium and that the material will have, at microwave frequencies, permittivities in the range of 25 to 75, a substantially constant temperature coefficient of permittivity, and a loss tangent not exceeding 0.005 at 20 C.
  • Microwave devices of the kind referred to in the aforesaid application include, for example, a microwave bandpass filter incorporating a resonator of dielectric material as specified, in replacement for the metal waveguide resonator incorporated in a conventional microwave filter, and an integrated microwave circuit in which the dielectric material is used to form the substrate carrying the conducting strips constituting the circuit elements.
  • Suitable dielectric materials for use in such devices include calcium zirconate, and combinations of barium zirconate and strontium zirconate, barium zirconate and calcium zirconate, strontium titanate and strontium zirconate, and calcium titanate andcalcium zirconate. Whilst all the dielectric materials referred to above have loss tangents, at microwave frequencies, not exceeding 0.005, and in some cases the loss tangents are less than 0.001 at 20C, it is desirable that, for the applications referred to, the microwave losses should be as low as possible, and some of the materials are less advantageous than others in this respect.
  • the barium strontium zirconates have microwave losses in excess of 0.001: one particular barium strontium zirconate containing barium and strontium in the atomic ratio of S6 44, which is especially advantageous for some microwave applications since its temperature coefficient of permittivity is near zero, would be even -more suitable for use in these applications if its small proportion of niobium pentoxide or tantalum pentoxide in the materials.
  • the said component is formed of a ceram ic dielectric material consisting of at least one compound of the general formula A130 where A is a metal of the group consisting of barium, strontium and calcium and B is a metal of the group consisting of titanium and zirconium, together with at least one oxide of the group consisting of niobium pentoxide and tantalum pentoxide, the composition of the material being so chosen that the atomic ratio of zirconium to titanium is in the range of 20 to 0, that the total proportion of niobium pentoxide and tantalum pentoxide is in the range of 0.1 to 3.0 mole per cent of the total amount of the compounds ABOQ, that the material does not include significant amounts of both barium and titanium and that it will have, at microwave frequencies, permittivities in the range of 25 to 75, a
  • the dielectric material contains a relatively large proportion of either barium or titanium, there should not be a sufficient amount of the other one of these elements present to make it possible for barium titanate to be formed in a proportion which will cause the specified limits of permittivity and loss tangent of the material as a whole to be exceeded, and in particular the proportions of barium and titanium present should be such that barium titanate does not constitute more than 10 mole per cent of the material.
  • the compound or compounds ABO may be so chosen, and where two or more of such compounds are present the relative proportions of the compounds may be so adjusted, that the dielectric material. as a whole has a temperature coefficient of permittivity of a desired positive or negative value, a valve within the range of +50 to l00 p.p.m. per degree Centigrade usually being preferred and in some cases the composition of the material being balanced to give a value of, or near, zero.
  • the dielectric material may consist of a single compound of the type A80 having the requisite-properties, such as calcium zirconate, or of a mixture or solid solution of two or more of such compounds, together with a proportion of niobium pentoxide and/or tantalum pentoxide in the range specified. Since a material consisting of a single phase solid solution is more readily reproducible than a material consisting of a mixture of compounds, where two ABO compounds are present it is in general preferred to employ combinations of compounds which form such a single phase,
  • barium-barium, strontium-strontium, barium-strontium, or calcium-calcium compounds are particularly preferred.
  • the calcium-containing materials tend to have increased losses and variable temperature coefficients of permittivity in the presence of moisture: it may therefore be necessary to ensure that moisture is excluded from these materials during use.
  • a device in accordance with the invention is a microwave bandpass filter incorporating one or more dielectric resonators in the form of bars, cylinders or discs of dielectric material as specified above: resonators of this kind are advantageous in comparison with the conventional metal waveguide resonators, since the use of a dielectric enables the size of the resonator to be reduced.
  • a ceramic dielectric resonator is usually placed within a metal screen, which results in a slight increase in the resonant frequency of the dielectric element.
  • Another type of device in which the aforesaid dielectric materials can be employed with advantage is an integrated microwave circuit, the dielectric material being used to form the substrate carrying the circuit elements.
  • the dielectric materials employed in accordance with the invention are advantageous in this connection, as compared with high density alumina which has hitherto been proposed for this application, since they have higher permittivities, and lower temperature coefficients of permittivity, than those of alumina.
  • the dielectric materials for use in the devices of the invention can be prepared by techniques conventionally employed for the production of ceramic dielectric materials of this type, that is to say by preparing an intimate mixture-of suitable powdered starting materials in the required relative proportions, pressing the mixture, and heating the pressed compacts to effect reaction and sintering.
  • the materials can be prepared from mixtures of the requisite pre-formed compounds of the formula A80 together with niobium pentoxide and/or tantalum pentoxide, but preferably the ABO, compounds are prepared from starting mixtures comprising the constituent oxides and/or compounds, such as carbonates or hydroxides, which decompose on heating to give the oxides.
  • the niobium pentoxide and/or tantalum pentoxide maybe initially introduced into the dielectric material either in the free state or in the form of an alkaline earth metal niobate or tantalate of the general formula MR O or M R O where M is barium, strontium or calcium and R is niobium or tantalum.
  • M barium, strontium or calcium
  • R is niobium or tantalum.
  • the niobium and/or tantalum when the niobium and/or tantalum is initially introduced as the free oxide, it might be possible, or desirable, to reduce the content of zirconium or titanium in the dielectric material by an amount atomically equivalent to the amount of niobium and/or tantalum introduced, the niobium/tantalum thus replacing part of the zirconium/titanium in the dielectric composition.
  • a preferred procedure for preparing the dielectric components for use in devices in accordance with the invention, by which ceramic bodies of density approaching the theoretical density, and hence having optimum permittivity, can be obtained includes the steps of isostatically pressing the powdered starting mixture to form compacts of simple shapes, such as rods, prefiring at a sufficiently high temperature to effect partial sintering so as to form coherent bodies, then crushing the prefired compacts to powder, die-pressing the powder to form compacts of the desired shapes of the components to be produced, and firing these compacts at a temperature higher than that employed for the 5 prefiring step to convert them into dense, sintered,
  • ceramic bodies the niobium pentoxide and/or tantalum pentoxide, in the free state or in the form of compounds as aforesaid being either included in the initial starting mixture or added to a powdered prefired material consisting only of the desired compound or compounds A80 prior to the die-pressing and sintering steps. 7
  • niobium pentoxide/tantalum pentoxide is thus incorporated in the dielectric material composition before or during the final sintering process, and appears to go into solid solution in the A30 material.
  • a disc (A) of barium strontium zirconate of composition Ba Sr ZrQ- powdered barium carbonate, strontium carbonate and zirconium dioxide were mixed in the required relative proportions and the powder mixture was milled with water in aporcelain ball mill for 36 hours, then dried and compacted into rods under hydrostatic pressure of 7 tons per square inch, and the rods were prefired in air at l250C for 2 hours. The prefired rods were crushed in a disc mill, and the resulting powder was wet milled in a ball mill for 24 hours. The powder was then dried, mixed with a solution of 2 wt. percent camphor in ether, and die-pressed under a pressure of 9 tons per square inch, to form a disc, which was finally sintered by firing in air at 1450C for 2 hours.
  • Two further discs (B, C) were prepared in the manner described above, with the addition of powdered niobium pentoxide, in amounts, respectively, of 0.25 and 1.0 mole per cent of the barium strontium zirconate, to the prefired powder before the die-pressing and'sintering steps.
  • a disc (A) of calcium zirconate was prepared by the method described in Example 1, using calcium carbonate and zirconium dioxide powders as starting materials. Further discs (B, C) were prepared in the same manner with the addition of, respectively, 0.25 and 1.0 mole per cent of niobium pentoxide to the prefired powder.
  • perature coefficient of permittivity is small, that of Some of the properties of the materialsprepared as described in the above Examples are given in the following Table.
  • the properties which have been determined are the permittivity, loss tangent, and temperafrequency being determined for such discs 20 mm in diameter and 4 mm thick, resonated in the TE mode in a closely fitting waveguide reflection cavity cut-off in the air regions.
  • TCC ture coefficient of capacitance
  • TCF temperature coefficient of resonant frequency
  • the temperature coefficients of permittivity of the materials were not determined directly, but can readily be deduced from the temperature coefficient of capacitance, or from the temperature coefficient of resonant frequency of a microwave cavity containing a disc of the material, which properties are more conveniently measured at-audio frequency and microwave frequency respectively.
  • the temperature coefficient of permittivity is derived from the temperature coefficient of capacitance by subtracting from the latter the coefficient of thermal expansion of the material, which for these ceramic materials in only 8 10 X 1O- /C, or is derived from the temperature coefficient of resonant frequency by solving the resonator equations as given by S. B. Cohn and K. C.
  • the important temperature coefficient for microwave applications is that of the resonant frequency (which can be measured) rather than that of the permittivi ty (which must be calculated).
  • the resonant frequency is related to E where E is the permittivity, and the temperature coefficient of resonant frequency is related to times the temperature coefficient of permittivity. It is therefore expected that if the temresonant frequency will also be small, and if the temperature coefficient of permittivity is large, that of resonant frequency will be large and of opposite sign.
  • the major faces of the sintered discs of the materials, prepared as described above, were lapped to produce flat parallel surfaces and silver paste was applied to these surfaces, dried at 120C for 12 hours and fired at 650C for one hour.
  • niobium pentoxide appears to result in only a slight reduction of the loss tangent, at microwave frequency, in the cases of strontium zirconate-titanates and calcium zirconate, which materials have lower microwave losses than barium strontium zirconates in the absence of niobium pentoxide additions.
  • dielectric components in accordance with the invention are suitable for use as resonators for filter elements.
  • Suitably shaped plates of the same materials, of thickness about 1 mm, can also be used as substrates for integrated microwave circuits to be operated at frequencies of l to 5 GI-Iz.
  • a device in accordance with the invention may incorporate more than one dielectric component as specified.
  • a microwave filter may comprise a number of dielectric resonators distributed along the axis of a waveguide used below its cut-off frequency.
  • FIG. 1 shows, in sectional elevation, a bandpass filter incorporating five dielectric resonators
  • FIG. 2 is a sectional plan view of the filter shown in FIG. 1;
  • FIG. 3 is a transverse section of the filter shown in' FIGS. 1 and 2, drawn on the line IllIIII of FIG. 1;
  • FIG. 4 is a plan view'of a microstripline circuit on a dielectric substrate.
  • FIG. 5 is a section drawn on the line V.V of FIG. 4.
  • the device shown is a narrow band, high Q, filter designed to operate at a frequency of 4 GiI-Iz, comprising five resonator discs 1 formed of a dielectric material of a composition as specified in accordance with the invention, suitably one of the Nb O containing materials ,listed in the foregoing Table, each disc having a diameter of 20 mm, a thickness of 4 mm, and being adapted to resonate in the TE mode.
  • the resonator discs are supported in a copper outer casing 2, suitably l4 cm long and 3.5 cm square in cross-section, by means of a tube 3,cylindrical spacers 4 and rings 5, all formed of a low loss, low permittivity dielectric material, for example the material sold under the Registered Trade Mark Rexolite the tube 3 being closed at both ends by copper caps 6.
  • the resonator discs 1 have central holes 7 into which are inserted rods 8 of the same dielectric material as the discs themselves, and tuning screws 9 are inserted through the casing 2 to bear upon the rods 8 for adjusting the position of the rods in the holes 7, in order to adjust the resonant frequency of the discs as required.
  • two 50 ohm Type-N connectors 10 are attached to the casing 2, one at each end of the resonator disc assembly; copper coupling strips 11, 12, for signal input and output respectively, are soldered to the center pins 13 of the connectors, which pass through apertures in the casing 2, and the copper strips are supported within the filter cavity by rings 14 of the same dielectric material as the members 3, 4 and 5, referred to above.
  • FIGS. 4 and 5 of the drawings show a filter circuit in 50 ohm microstripline, 15, carried on a substrate 16 in the form of a rectangular plate of a dielectric material of a composition as specified in accordance with the invention.
  • the substrate may be, for example, mm long, 12.5 mm wide and 0.8 mm thick and, as shown in FIG. 5, has a continuous metal coating 17 on the face opposite to that on which the stripline circuit 15 is carried.
  • Both the circuit 15 and the coating 17 suitably consist of a layer of chromium covered with a layer of gold: these layers are formed on both sides of the dielectric plate by evaporating first chromium and then gold on to the faces of the plate and finally increasing the gold layer to the desired thickness by electroplating; part of the coating is then removed from one face of the plate by photo-etching, to leave the desired circuit 15.
  • a microwave bandpass filter comprising in combination v a. input means,
  • said coupling means comprising at least one resonator in the form of a body of dielectric material arranged to be subjected to the microwave signal energyv so that the response of the bandpass filter depends on the permittivity of the dielectric,
  • the said resonator body being formed of a ceramic dielectric material consisting of i. at least one compound of the general formula A wherein A.
  • A is a metal of the group consisting of barium, strontium and calcium and B.
  • B is a metal of the group consisting of zirconium and titanium,
  • composition of the material being so chosen A that the atomic ratio of zirconium to titanium isin the range of 80 20 to :0,
  • niobium pentoxide and tantalum pentoxide is in the range of 0.1 to 3.0 mole per cent of the total amount of the compounds
  • ABO C. that if both barium and titanium are present the proportions thereof are such that barium titanate does not constitute more than 10 mole per cent of the material
  • the said resonator body has a hole formed therein, and g. there 18 provided a rod slidable in said hole and tuning means coupled to said rod to adjust the position of said rod in said hole whereby to vary the resonant frequency of said body.
  • a microwave bandpass filter which includes a housing of low permittivity dielectric material and wherein said resonator body of said ceramic dielectric material is in the form of a disc, said disc being disposed within said housing, and said input means and said output means being disposed on said housing on opposite sides of said disc.

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US00090655A 1969-12-11 1970-11-18 Microwave devices Expired - Lifetime US3713051A (en)

Applications Claiming Priority (1)

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GB6057969A GB1268811A (en) 1969-04-22 1969-04-22 Improvements in or relating to microwave devices

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US3713051A true US3713051A (en) 1973-01-23

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US (1) US3713051A (enrdf_load_stackoverflow)
JP (1) JPS5128178B1 (enrdf_load_stackoverflow)
CA (1) CA921692A (enrdf_load_stackoverflow)
DE (1) DE2047229A1 (enrdf_load_stackoverflow)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896545A (en) * 1973-10-12 1975-07-29 Gen Dynamics Corp Method of making a molded waveguide filter with integral tuning posts
US3969814A (en) * 1975-01-15 1976-07-20 Trw Inc. Method of fabricating waveguide structures
US4121941A (en) * 1977-11-10 1978-10-24 Matsushita Electric Industrial Co., Ltd. Low microwave loss ceramics and method of manufacturing the same
US4224587A (en) * 1977-11-08 1980-09-23 Matsushita Electric Industrial Co., Ltd. Comb-line bandpass filter
US4319208A (en) * 1978-07-21 1982-03-09 Thomson-Csf Microwave filter incorporating dielectric resonators
US4365221A (en) * 1981-03-30 1982-12-21 Motorola Canada Limited Helical resonator filter with dielectric apertures
US4426631A (en) 1982-02-16 1984-01-17 Motorola, Inc. Ceramic bandstop filter
US4431977A (en) * 1982-02-16 1984-02-14 Motorola, Inc. Ceramic bandpass filter
US4459570A (en) * 1980-08-29 1984-07-10 Thomson-Csf Ultra-high frequency filter with a dielectric resonator tunable in a large band width
US4462098A (en) * 1982-02-16 1984-07-24 Motorola, Inc. Radio frequency signal combining/sorting apparatus
US4613838A (en) * 1984-08-31 1986-09-23 Murata Manufacturing Co., Ltd. Dielectric resonator
US4639699A (en) * 1982-10-01 1987-01-27 Murata Manufacturing Co., Ltd. Dielectric resonator comprising a resonant dielectric pillar mounted in a conductively coated dielectric case
US4661790A (en) * 1983-12-19 1987-04-28 Motorola, Inc. Radio frequency filter having a temperature compensated ceramic resonator
USRE32768E (en) * 1982-02-16 1988-10-18 Motorola, Inc. Ceramic bandstop filter
US5329687A (en) * 1992-10-30 1994-07-19 Teledyne Industries, Inc. Method of forming a filter with integrally formed resonators
US5874871A (en) * 1996-03-27 1999-02-23 Telefonaktiebolaget Lm Ericsson Mounting of dielectric resonators
US6097271A (en) * 1997-04-02 2000-08-01 Nextronix Corporation Low insertion phase variation dielectric material
KR100339097B1 (ko) * 2000-03-16 2002-05-31 장형식 마이크로파용 유전체 조성물 및 그 제조방법
EP1174944A3 (en) * 2000-07-17 2003-07-09 Mitec Telecom Inc. Tunable bandpass filter
WO2016172144A1 (en) * 2015-04-23 2016-10-27 University Of Florida Research Foundation, Inc. Method for the generation of power
CN114773056A (zh) * 2022-05-11 2022-07-22 丽智电子（南通）有限公司 一种npo mlcc用陶瓷材料的助烧剂、陶瓷材料及制备方法

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JPS5367656U (enrdf_load_stackoverflow) * 1976-11-09 1978-06-07
JPS5717201A (en) * 1980-07-07 1982-01-28 Fujitsu Ltd Dielectric substance filter
JPS60131707A (ja) * 1983-12-19 1985-07-13 株式会社村田製作所 非還元性温度補償用誘電体磁器組成物
JPH0639330B2 (ja) * 1984-01-24 1994-05-25 ソニー株式会社 チタン酸バリウム・ストロンチウム微粒子の製造方法
JPS616176A (ja) * 1984-06-18 1986-01-11 日本特殊陶業株式会社 高周波用誘電体磁器組成物
DE3821071A1 (de) * 1987-06-22 1989-01-05 Murata Manufacturing Co Dielektrischer filter
FR2646022B1 (fr) * 1989-04-13 1991-06-07 Alcatel Espace Filtre a resonateur dielectrique

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US2626220A (en) * 1947-05-20 1953-01-20 Thurnauer Hans Insulating materials
GB755860A (en) * 1953-12-12 1956-08-29 George Victor Planer Improvements in or relating to electrical ceramics
GB1047057A (en) * 1963-02-22 1966-11-02 Nippon Telegraph & Telephone Improvements in or relating to dielectric materials
US3534286A (en) * 1967-05-16 1970-10-13 Litton Precision Prod Inc Microwave attenuator comprising aluminum oxide and aluminum titanate usable in a microwave tube
US3534301A (en) * 1967-06-12 1970-10-13 Bell Telephone Labor Inc Temperature compensated integrated circuit type narrowband stripline filter

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US2626220A (en) * 1947-05-20 1953-01-20 Thurnauer Hans Insulating materials
GB755860A (en) * 1953-12-12 1956-08-29 George Victor Planer Improvements in or relating to electrical ceramics
GB1047057A (en) * 1963-02-22 1966-11-02 Nippon Telegraph & Telephone Improvements in or relating to dielectric materials
US3534286A (en) * 1967-05-16 1970-10-13 Litton Precision Prod Inc Microwave attenuator comprising aluminum oxide and aluminum titanate usable in a microwave tube
US3534301A (en) * 1967-06-12 1970-10-13 Bell Telephone Labor Inc Temperature compensated integrated circuit type narrowband stripline filter

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Pucel et al. Losses in Microstrip in IEE Transactions on Microwave Theory and Techniques Vol. MTT 16 No. 6, June 1968. *

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896545A (en) * 1973-10-12 1975-07-29 Gen Dynamics Corp Method of making a molded waveguide filter with integral tuning posts
US3969814A (en) * 1975-01-15 1976-07-20 Trw Inc. Method of fabricating waveguide structures
US4224587A (en) * 1977-11-08 1980-09-23 Matsushita Electric Industrial Co., Ltd. Comb-line bandpass filter
US4121941A (en) * 1977-11-10 1978-10-24 Matsushita Electric Industrial Co., Ltd. Low microwave loss ceramics and method of manufacturing the same
US4319208A (en) * 1978-07-21 1982-03-09 Thomson-Csf Microwave filter incorporating dielectric resonators
US4459570A (en) * 1980-08-29 1984-07-10 Thomson-Csf Ultra-high frequency filter with a dielectric resonator tunable in a large band width
US4365221A (en) * 1981-03-30 1982-12-21 Motorola Canada Limited Helical resonator filter with dielectric apertures
US4426631A (en) 1982-02-16 1984-01-17 Motorola, Inc. Ceramic bandstop filter
US4431977A (en) * 1982-02-16 1984-02-14 Motorola, Inc. Ceramic bandpass filter
US4462098A (en) * 1982-02-16 1984-07-24 Motorola, Inc. Radio frequency signal combining/sorting apparatus
USRE32768E (en) * 1982-02-16 1988-10-18 Motorola, Inc. Ceramic bandstop filter
US4639699A (en) * 1982-10-01 1987-01-27 Murata Manufacturing Co., Ltd. Dielectric resonator comprising a resonant dielectric pillar mounted in a conductively coated dielectric case
US4661790A (en) * 1983-12-19 1987-04-28 Motorola, Inc. Radio frequency filter having a temperature compensated ceramic resonator
US4613838A (en) * 1984-08-31 1986-09-23 Murata Manufacturing Co., Ltd. Dielectric resonator
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JPS5128178B1 (enrdf_load_stackoverflow) 1976-08-17
CA921692A (en) 1973-02-27
DE2047229A1 (de) 1971-06-16

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