US3702946A - Circuits for regulating a current - Google Patents

Circuits for regulating a current Download PDF

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Publication number
US3702946A
US3702946A US127454A US3702946DA US3702946A US 3702946 A US3702946 A US 3702946A US 127454 A US127454 A US 127454A US 3702946D A US3702946D A US 3702946DA US 3702946 A US3702946 A US 3702946A
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Prior art keywords
circuit
transistor
base
voltage
resistance
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Expired - Lifetime
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US127454A
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English (en)
Inventor
Wolfgang Kraft
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Siemens AG
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Siemens AG
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/06—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
    • G11C11/06007—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

Definitions

  • the voltage can vary linearly with the operating voltage applied to the said free end, in dependence on temperature, or in dependence on some other factor, or can be constant.
  • a diode can be conductively connected between the base and the reference voltage. The resistance of the load resistor is less than that of the substantially non-inductive resistor.
  • the invention relates to a circuit for regulating the amplitude of current particularly of current pulses, ina series leg, composed of a load resistor, of the emittercollector path of a transistor, of a substantially non-inductive resistor, and of a source of voltage.
  • the current through the load resistor is switched by means of a transistor and of a transformer. Control pulses are conducted to a first winding of the transformer, a second winding of the transformer being connected to the base and to the emitter of a transistor.
  • the ohmic resistance of the load current circuit is substantially greater than that of the load resistor, so that the current is influenced virtually only by the ohmic resistance and not by the load resistor. Since the tolerance of the ohmic resistance is a relatively small plus or minus 1 percent, the amplitude of the current pulse in the load current circuit can be held largely constant without requiring a special regulatory arrangement. This is particularly the case, when changes in the load current circuit, caused by temperature fluctuations, can be ignored.
  • This known circuit has the disadvantage, however, that a relatively large amount of power is used in the load current circuit, because the current flow requires a relatively high voltage in view of the largeohmic resistance. Further difficulties arise when temperature fluctuations change the individual circuit parameters.
  • An object of the invention is a circuit for regulating the amplitude of the current in a load current circuit, particularly current pulses, which circuit requires relatively little power and is largely stabilized against changes in circuit parameters caused by temperature fluctuations or by changes in the values of the circuit components.
  • a further object of the invention is a circuit of the preceding object, which circuit is suitable for operation over a temperature range of from -55C. to +125C.
  • the invention consists of a first transistor, a series current path in which the control pulses are conducted, the series current path including the emittercollector path of the first transistor and connected in series with the emitter-collector path a load resistor and a substantially non-inductive resistor, the latter resistor being smaller in resistance than the load resistor, a. circuit junction, the base of the first transistor being connected to this junction, a source of operating voltage having two terminals, the voltage difference between one terminal of this source and the circuit junction constituting a reference voltage, and controlled electronic switching means connected between the base and a constant potential.
  • FIG. 1 is a circuit diagram of the first embodiment of the invention, in which the reference voltage is independent of the operating voltage;
  • FIG. 2 is a circuit diagram of a second embodiment, in which the reference voltage, obtained by means of a diode, is dependent on the operating voltage;
  • FIGS. 3 and 4 are graphs in which are plotted the change in current and voltage at different points in the circuit of FIG. 2.
  • the circuit consists of first transistor 1 and additional transistor 2, of two substantially non-inductive resistors 4 (56 ohms) and 10 (1.2 ohms), of the load resistor 5 (5.1 ohms), and of the diode 6.
  • a source 13 of operating voltage (5 volts) is connected between the terminal 7 and the ground ter minal.
  • the resistance of the resistor 10 is substantially smaller than that of the load resistor 5.
  • the ratio between the resistors 10 and 5 can be from 1:2 to 1:5
  • Fixed potential means here in form of a simple conductor connects the emitter of transistor 2 to ground.
  • the operating voltage is held constant within 2 percent. Because of limitations in manufacture, and because of aging, the resistances of the resistors 10 and 5 and the resistance of the emittercollector path of the first transistor 1 are accurate only within certain tolerances.
  • the tolerance for the resistor 10 is i 1 percent.
  • the tolerances for the emitter-follower path of transistor 1 and for the load resistor 5 are respectively 1 25 percent and 1+: 7 percent.
  • the circuit described is intended for operation within a temperature range 55C. to +C. It is also assumed that for changes in temperature over a range from -55C. to +125C. the resistor 10 changes plus or minus 1 percent, the resistance of the emitter-collector path of transistor 1 changes 1 10 percent, and the resistance of the load resistance 5 changes i 5 percent.
  • the circuit shown in FIG. 1 regulates the amplitude of the current pulse i.
  • the current pulse should be regulated as precisely as possible, and variation should. not exceed 1 1 percent.
  • it may be required to regulate the current pulse i independent of the temperature.
  • it may be required to regulate the amplitude of the current pulse in dependence on the temperature or in dependence on some other factor.
  • the emitter-collector path of the additional transistor 2 becomes conductive, a current thereby flowing through the resistor 4, the diode 6, and the base of first transistor 1. Consequently, the emitter-collector path of transistor 1 becomes conductive, and a current pulse i appears in the load current circuit.
  • the amplitude of this current pulse depends on the reference voltage that exists between the terminal 7 and the circuit junction 8 afforded by source of reference voltage 14. When this reference voltage changes, there changes also the voltage at the base of transistor 1, the voltage at the emitter of transistor 1, and the voltage drop across the resistor 10. Because of the change in the voltage drop across the resistor 10, the amplitude of the current pulse i is regulated.
  • the circuit is characterized by a small power consumption, because the value of the resistor is small in comparison to that of the load resistor 5, and because a relatively low operating voltage is required in view of the small current demands of the circuit.
  • the power consumed which is the product of the current and the operating voltage, is therefore also small.
  • the circuit has the further advantage that it reduces changes in the current caused by changes in the value of the load resistor 5.
  • the circuit is simple and inexpensive, because the transistor 1 plays a double role: it turns on and off the current through the load resistor 5, and it enables a controllable variation of the voltage across the resistor 10, thereby enabling regulation of the current.
  • the reference voltage between the terminal 7 andthe junction 8 is held constant.
  • the changes in the resistances of the load resistor 5 and of the emitter-collector path of transistor 1, caused by temperature changes and tolerances, are regulated by changing the voltage across the resistor 10. For example, if the value of the load resistor 5 becomes smaller, the voltage at the collector of transistor 1 is smaller and with a constant emitter voltage, the collector-emitter voltage is larger, so that the amplitude of the current pulse i remains constant.
  • the diode 6 regulates changes in the base-emitter voltage of transistor 1, caused by temperature changes. This diode is connected so that it conducts. The effect of change in tem perature on the voltage drop across the diode and across the base-emitter path of transistor 1 is the same. If the voltage drop across the diode 6 increases, the voltage drop across the base-emitter path likewise increases, whereby temperature-caused changes of the emitter voltage of transistor 1 are regulated.
  • the amplitude of the current pulses is to be independent of temperature but dependent upon some other factor, there is provided between the terminal 7 and the junction 8 a reference voltage that changes in dependence on this other factor. Temperature changes are of no consequence, because, as previously explained, they are compensated by variations in the voltage drop across the resistor 10.
  • the amplitude of the current pulse i is to be made dependent on temperature
  • the aforesaid reference voltage is also made dependent on the temperature.
  • FIG. 2 there is shown a circuit for regulating the amplitude of the current pulse i in dependence on the temperature.
  • the reference voltage must also be temperature-dependent.
  • a temperaturedependent resistance such as the diode 12, connected between the terminal 7 and the junction 8, provides the desired reference voltage. At the same time, this component makes variations of i 2 percent in the operating voltage ineffective.
  • the diode 6 is replaced by a second transistor 3, because the temperature-dependent base-emitter voltage characteristics of the two transistors l and 3 can be more accurately matched than can the change in voltage drop of a diode 6 to the change in the base-emitter voltage of transistor 1.
  • the base electrode of transistor 3 is connected to the base of transistor 1 whereas the emitter electrode of transistor 3 is connected to the circuit junction 8.
  • the transistors 1 and 3 are advantageously of the same type with the same temperature dependency, exposed to the same temperature conditions, as by mounting them in the same housing.
  • the resistor 1 1 drains off the current that flows through the base-emitter path of transistor 1 when shutting off.
  • the transistors 1 and 3 are PNP types and the transistor 2 is of NPN types.
  • the terminal 7 can be made negative with respect to ground, in which case the transistors 1 and 3 are NPN types and the transistor 2 is a PNP type.
  • the circuit shown in FIG. 2 is suitable as a current driver for operating a matrix store.
  • a circuit of this kind can send, for example, inhibit current pulses through the inhibit leads of matrix memories. If a current driver of this kind is to be used in the temperature range of from 55C. to approximately C., the circuit is advantageously so designed that the current pulse i through the load resistor 5 (the inhibit lead of the memory) flows in accordance with the curve K1, shown in FIG. 3.
  • the temperature is plotted along the abscissa, and the current i is plotted along the ordinate.
  • the current i through the load resistor 5 should be 450 milliamperes, and at +125 C., the current should be 350 milliamperes, corresponding to a change in current of l milliampere /C.
  • the circuit enables the successive connection of a series of load resistors, the values of which are not exactly equal.
  • the temperature t is plotted along the abscissa, and the voltage U is plotted along the ordinate.
  • the current i is to follow the curve K1
  • the voltage across the load resistor 5 must follow the curve K2.
  • the curve K3 shows the variation in voltage across the emitter-collector path of transistor 1.
  • the curve K4 shows the variation in the voltage between the emitter of transistor 1 and ground, if the current through the load resistor 5 is to follow the curve K1. The worst case is taken into account in the curves K1 through K4.
  • the curve K5 shows the voltage at the terminal 7 with respect to ground.
  • the curve K6 is the difference between the curve K5 and K4. Curve K6 thus shows the voltage across the resistor 10 required to obtain the desired current i.
  • the voltage corresponding to the curve K6 is obtained by the diode 12, which produces the reference voltage at the junction 8. This reference voltage causes the desired current i throughout the entire temperature range.
  • the reference voltage can be linearly'dependent on the operating voltage.
  • a circuit for regulating the amplitude of control pulses comprising in combination current path means for control pulses including a load, resistance means, a first transistor having a base and a collector-emitter path connected in series with said load and said resistance means, said first transistor having predetermined temperature-dependent base-emitter voltage characteristics, and terminal means for connection with a source of operating voltage; controlled switch means connected with said base of said first transistor and with a point of reference potential; a circuit junction; a second transistor comprising base and emitter electrodes defining a junction having temperature-dependent voltage characteristics at least approximating said predetermined characteristics, one of said electrodes being connected with the base of said first transistor, the other of said electrodes being connected with said circuit junction; and reference voltage means connected between said terminal means and said circuit junction.
  • said controlled switch means comprise an additional transistor having a collector-emitter path connected with said base of said first transistor and providing a path for the base current of said first transistor.
  • a circuit a defined in claim 1, wherein said load has a predetermined resistance and said resistance means has a resistance less than said predetermined resistance.
  • said reference voltage means including temperature dependent resistance means connecting said terminal means to said circuit junction.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
US127454A 1970-03-25 1971-03-24 Circuits for regulating a current Expired - Lifetime US3702946A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702014351 DE2014351A1 (de) 1970-03-25 1970-03-25 Schaltungsanordnung zur Regelung eines Stromes

Publications (1)

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US3702946A true US3702946A (en) 1972-11-14

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US127454A Expired - Lifetime US3702946A (en) 1970-03-25 1971-03-24 Circuits for regulating a current

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US (1) US3702946A (xx)
AT (1) AT305434B (xx)
BE (1) BE764531A (xx)
CH (1) CH520446A (xx)
DE (1) DE2014351A1 (xx)
FR (1) FR2085030A5 (xx)
GB (1) GB1349275A (xx)
LU (1) LU62832A1 (xx)
NL (1) NL7103807A (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808845A (en) * 1985-12-02 1989-02-28 Hitachi, Ltd. High voltage pulse generating semiconductor circuit with improved driving arrangement
WO1993014569A1 (de) * 1992-01-14 1993-07-22 Robert Bosch Gmbh Schaltungsanordung zur unterspannungserkennung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160934A (en) * 1977-08-11 1979-07-10 Bell Telephone Laboratories, Incorporated Current control circuit for light emitting diode
DE3624586A1 (de) * 1986-07-21 1988-01-28 Siemens Ag Konstantstromquelle

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250922A (en) * 1964-06-12 1966-05-10 Hughes Aircraft Co Current driver for core memory apparatus
US3359433A (en) * 1964-03-04 1967-12-19 Int Standard Electric Corp Electronic telegraph relay
US3421102A (en) * 1965-06-10 1969-01-07 Tektronix Inc Direct coupled temperature compensated amplifier
US3518458A (en) * 1967-06-23 1970-06-30 Mallory & Co Inc P R Decoupling means for integrated circuit
US3532909A (en) * 1968-01-17 1970-10-06 Ibm Transistor logic scheme with current logic levels adapted for monolithic fabrication
US3534279A (en) * 1968-08-12 1970-10-13 Rca Corp High current transistor amplifier stage operable with low current biasing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359433A (en) * 1964-03-04 1967-12-19 Int Standard Electric Corp Electronic telegraph relay
US3250922A (en) * 1964-06-12 1966-05-10 Hughes Aircraft Co Current driver for core memory apparatus
US3421102A (en) * 1965-06-10 1969-01-07 Tektronix Inc Direct coupled temperature compensated amplifier
US3518458A (en) * 1967-06-23 1970-06-30 Mallory & Co Inc P R Decoupling means for integrated circuit
US3532909A (en) * 1968-01-17 1970-10-06 Ibm Transistor logic scheme with current logic levels adapted for monolithic fabrication
US3534279A (en) * 1968-08-12 1970-10-13 Rca Corp High current transistor amplifier stage operable with low current biasing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808845A (en) * 1985-12-02 1989-02-28 Hitachi, Ltd. High voltage pulse generating semiconductor circuit with improved driving arrangement
WO1993014569A1 (de) * 1992-01-14 1993-07-22 Robert Bosch Gmbh Schaltungsanordung zur unterspannungserkennung

Also Published As

Publication number Publication date
GB1349275A (en) 1974-04-03
AT305434B (de) 1973-02-26
DE2014351A1 (de) 1971-11-11
FR2085030A5 (xx) 1971-12-17
LU62832A1 (xx) 1971-08-24
NL7103807A (xx) 1971-09-28
BE764531A (fr) 1971-08-16
CH520446A (de) 1972-03-15

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