US3655377A - Tri-layered selenium doped photoreceptor - Google Patents

Tri-layered selenium doped photoreceptor Download PDF

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US3655377A
US3655377A US50265A US3655377DA US3655377A US 3655377 A US3655377 A US 3655377A US 50265 A US50265 A US 50265A US 3655377D A US3655377D A US 3655377DA US 3655377 A US3655377 A US 3655377A
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selenium
layer
vitreous
arsenic
tellurium
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US50265A
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Ronald P Sechak
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Xerox Corp
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Xerox Corp
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/22—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed systems contains four or more hetero rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic

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  • ABSTRACT A photosensitive element having a three layered photocon- [52] U.S. Cl. ..96/l.5, 96/1 PC, 117/217 ductive portion comprising a first layer of vitreous Selenium or E a vitreous arsenic-selenium alloy, 21 second layer comprising a 1e 0 care vitreous selenium-tellurium alloy, and a third layer comprising a vitreous alloy of arsenic-selenium. A method of imaging the photosensitive element is also described.
  • This invention relates to xerography, and in particular, to a system utilizing a photoreceptor having a panchromatic response.
  • the art of xerography involves the use of a photosensitive element containing a photoconductive insulating layer which is first uniformly electrostatically charged in order to sensitize its surface.
  • the plate is then exposed to an image of activating electromagnetic radiation such as light, X-ray, or the like which selectively dissipates the charge in the irradiated areas of the photoconductive insulator while leaving behind a latent electrostatic image in the non-irradiated areas.
  • the latent electrostatic image may then be developed and made visible by depositing finely divided electroscopic marking particles on the surface of the photoconductive insulating layer.
  • vitreous selenium as described by Bixby in US. Pat. No. 2,970,906, remains the most widely used photoconductor in commercial xerography in that it is capable of holding and retaining an electrostatic charge for relatively long periods of time when not exposed to light, and because it is relatively sensitive to light as compared to other photoconductive materials.
  • vitreous selenium has sufficient strength and stability to be reused hundreds or even thousands of times.
  • Vitreous selenium is susceptible to deleterious crystal growth, especially on its surface due to environmental conditions during machine operation. This crystal growth in selenium destroys its photoconductive insulating properties, and places a limit upon the effective life of a seleniurn plate. Although the spectral response of vitreous selenium is satisfactory, it is exclusively limited to the blue or bluegreen range of the visible spectrum.
  • This trilayer photoreceptor comprises a top layer or overcoating of arsenic-selenium alloy for abrasion resistance, temperature stability, and improved dark discharge; a second layer of selenium-tellurium alloy to yield panchromatic light response; and a bulk layer of xerographic grade selenium or halogen doped arsenic-selenium.
  • This tri-layer photoreceptor may be coated or evaporated onto any standard xerographic base by any conventional technique known to the art.
  • FIG. 1 is a schematic illustration of one embodiment of a xerographic photoreceptor as contemplated by this invention.
  • FIGS. 2A, 2B, 2C, and 2D represent a plot of sensitivity for various thicknesses of the top two photoreceptor layers of the tri-layer photoreceptor of the instant invention.
  • reference character 10 designates a tri-layer, xerographic photoreceptor according to this invention.
  • This photoreceptor has a conventional electrically conductive support member 11 such as brass, aluminum, nickel, steel or the like.
  • the support member may be of any convenient thickness, rigid or flexible, and may be in any desired form such as a sheet, web, plate, cylinder, drum, or the like. It may also comprise other materials such as metallized paper, plastic sheets coated with a thin layer of metal such as aluminum or copper iodide, or glass coated with a thin layer of chromium or tin oxide.
  • the photoreceptor may also be formed on an electrically insulating support and electrostatically charged by xerographic processes well known to the art of xerography for photoreceptors having insulating backings.
  • member 11 may, in some cases, be dispensed with entirely.
  • Layer 12 comprises a bulk layer of xerographic grade selenium such as that disclosed in US. Pat. No. 2,970,906, or a vitreous halogen doped arsenic-selenium alloy and may be of any convenient thickness. Such layers may be as thin as 10 microns, or as thick as 300 microns or more, but for most commercial applications this thickness will generally lie between about 40 to microns. The range of 40 to 100 microns is preferred in that in general, thicker layers (i.e., those approaching 300 microns and greater) show some signs of less desirable adherence to the support member than lesser thicknesses. Thin layers (i.e., about 1 to 20 microns) charged to the high level of surface potential required for optimum print properties in present xerographic machines, experience localized high dark discharge, resulting in print deletions and generally poor print quality.
  • xerographic grade selenium such as that disclosed in US. Pat. No. 2,970,906, or a vitreous halogen doped arsen
  • Layer 13 denotes a thin layer of a vitreous selenium-telluriurn alloy having a broad range of 0.1 to 2 microns in thickness, which is provided to give a panchromatic light response (i.e., sensitive to light in the region up to about 700 nanometers).
  • Selenium-tellurium alloys containing from about 2 to 50 percent tellurium by weight are generally satisfactory, with up to about 25 percent tellurium being sufficient to give the desired panchromatic response. Tellurium concentrations above approximately 25 percent result in an increasingly greater red response but exhibit higher light fatigue and dark discharge. If the selenium-tellurium layer is thicker than about 2 microns, high dark discharge results, while thicknesses below about 0.1 microns fail to yield a significant red response.
  • a preferred thickness range of about 0.1 to 1.0 microns has particular utility for the reproduction of color images ad will be further described in more detail below.
  • Layer 14 comprises'an overcoating of a vitreous arsenicselenium alloy about 0.1 to 2.0 microns thick containing arsenic in a concentration from about 0.1 to 40 percent by weight.
  • Arsenic in the range of about 5 to 20 percent by weight has been found to be particularly desirable in that this composition exhibits good thermal stability and abrasion resistance. If the arsenic-selenium layer is thicker than about 2 microns, the red response of the lower selenium-tellurium is substantially eliminated or reduced. If the arsenic-selenium layer is thinner than about 0.1 microns, the abrasion resistance and thermal stability provided by this layer is deleteriously affected.
  • a preferred thickness range of about O.l to 0.6 microns has particular utility for the reproduction of color images when used with the preferred range for the seleniumtellurium layer above.
  • the arsenic-selenium top layer (especially layers containing arsenic concentrations greater than about percent) may be doped with about 10 to 10,000 parts per million by weight of a halogen such as chlorine or iodine in order to further improve sensitivity by reducing residual potential with positive charging. This concept is disclosed in US. Pat. No. 3,312,548.
  • the bulk layer 12 which comprises essentially vitreous selenium, may optionally contain from about 0.1 to 0.5 percent arsenic.
  • halogens in amounts from about 10 to 10,000 parts per million by weight may also be added to this bulk layer.
  • the tri-layer photoreceptor of this invention may be prepared by any suitable technique.
  • a typical technique includes vacuum evaporation wherein each photoconductive layer is sequentially evaporated onto its corresponding base material.
  • the selenium, selenium-tellurium, and arsenic-selenium layers are each evaporated by separate steps, under vacuum conditions varying from about 10 to l0 torr.
  • the three photoreceptor layers are continuously vacuum evaporated, one after the other, in the same vacuum chamber without breaking the vacuum, by sequentially activating three separate sources of selenium, selenium-tellurium, and arsenicselenium.
  • Another typical technique includes co-evaporation, wherein the appropriate amount of material for each of the alloy layers is placed in separate heated crucibles maintained under vacuum conditions, with the source temperature of each alloy constituent being controlled so as to yield the appropriate percentage of the alloy desired. This technique is illustrated in copending application Ser. No. 566,593 filed on July 20, 1966.
  • Another typical method of evaporation includes flash evaporation under vacuum conditions similar to those defined in co-evaporation, wherein a powder mixture such as selenium and tellurium is selectively dropped into a heated crucible maintained at a temperature of about 400 to 600 C. The vapors formed by the heated mixture are evaporated upward onto a substrate supported above the crucible.
  • a powder mixture such as selenium and tellurium
  • the substrate onto which the photoconductive material is evaporated is maintained at a temperature from about 50 to C.
  • a water cooled platen or other suitable cooling means may be used in order to maintain a constant substrate temperature.
  • a selenium base or bulk layer thickness of about 60 microns is obtained when evaporation is continued for about I hour at a vacuum of about 5 X l0 torr at a crucible temperature of about 280 C.
  • the crucibles which are used for evaporation of the photoreceptor layers may be of any inert material such as quartz, molybdenum, stainless steel vacuum coated with silicon monoxide, or any other equivalent materials.
  • the selenium or selenium alloy being evaporated is maintained at a temperature between about its melting and boiling point.
  • the photoreceptor of the instant invention exhibits a panchromatic response to visible light and thus has great flexibility with respect to its commercial utility because of its greater efficiency in respond ing to visible light. For example, for conventional line copies of light blue on white background, the instant photoreceptor produces copies of superior quality to most commercial photoreceptors. The instant photoreceptor also produces excellent black on white copies of originals which have various colored backgrounds.
  • the preferred two top layer thickness ranges of 0.1-L0 microns for the selenium-tellurium layer and 0.1 to 0.6 microns for the arsenic-selenium layer exhibit critical thickness ranges which are particularly suitable for the making of colored prints by xerographic techniques.
  • One such suitable technique includes the making of a color print from a positive color transparency, such as a Kodachrome (Eastman Kodak Co.) color side or transparency.
  • the plate is first sensitized by positive corona charging followed by exposing the plate to the Kodachrome image through a red filter.
  • the plate is then developed with cyan developer which is attracted to the unexposed or charged areas of the plate (i.e., those areas which correspond to the green and blue portions of the transparency and which were filtered out by the red filter).
  • This portion of the developed image is then transferred to a sheet of ordinary white bond paper.
  • the above procedure is repeated again by exposing through a green filter, and development carried out with magenta developer which is transferred to the same sheet of paper in exact register with the previous cyan image.
  • FT8CW is used as the exposure source to form a An oxidized aluminum Substrate in form of cylindrical latent electrostatic image.
  • the drum bearing the latent elecdrum approximately 9% inches in diameter and 15 inches long image is developed by cascadl'fg an electroscop' is placed in a vacuum chamber in direct Contact with a romp ic marking material over the photoconductive surface of the ing water cooled platen maintained at a controlled temperal5 drum
  • the developed image transferred to a sheet of 5P ture of about 50o 60o A loading of to 3/16 inch Seleni and heat fused to make it permanent.
  • the final image exhibits urn pellets is placed in an SiO coated stainless steel evaporagood Fsolunon and hlgh density and an excellent copy of tion boat and positioned about 10 inches below the surface of f z i th I d x 2400 C d the drum.
  • a second SiO coated stainless steel boat containing 6 rum m a erox. we opler l/8- to 3/16-inch pellets of 25 percent tellurium and 75 per- E copy i an 3 b.lue ggi g cent selenium is placed adjacent to the selenium containing 18 T 2' 1s lgmge u SiO coated stainless boat.
  • a third SiO coated stainless steel a is?
  • each boat contains an 5; e f y to at orme y e smg e ayer 0 aluminum shutter which may be placed over the open surface reous memc'se of the boat to halt the deposition of each alloy at any desired M E III-VII time.
  • the chamber is then evacuated to a vacuum of about A ri of five drums about 9% inches in diameter and 15 10 torr while the drum is rotated at about 10 RPM.
  • the boat inches in length with an oxidized aluminum substrate are containing the selenium, with its shutter in the open position, coated according to the method set forth in Example 1. The is heated to a temperature of about 285 C.
  • first drum is coated with a 60-micron coating of selenium on minutes to form a layer of vitreous selenium about 60 microns 3 5 the oxidized aluminum and is to be further used as a standard thick on the aluminum drum.
  • Four additional drums are vacuum coated with boat is then closed, and the electrical power to the selenium the tri-layer nestture by the method set forth in Example I. boat turned off.
  • the drums contain 60-micron coatings of selenium speed is increased to about 30 RPM and the selenium-tellurion the aluminum base followed by an overcoating of approxiurn containing boat heated to a temperature of 450 C- for mately 0.3 microns of a 75 percent selenium 25 percent telabout 6 minutes to form a selenium-tellurium coating about lurium alloy, and a final overlayer of 0.1 microns of a 5 per- 0.3 microns thick on the selenium layer. The shutter is then cent arsenic 95 percent selenium alloy.
  • Layer 1 Layer 2: Layer 3: Selenium 75% scle- 5% arsebulk ninm-25% nic, layer, tellurium, selenium, X-ray Drum No. microns microns microns Drum speed 1 examination Print quality 2 l-tStnndard 60 None None Sylvania Sylvanin Sylvania Crystallinity With black and white line copying, selenium conbluc-grcen grccn warm at 60,000 the test drums have quality corntrol drum). lamps, lamps, white copics. parable to the selenium drum. Xerox Xerox lamp. With color subjects, the test drums Part No. Part N 0. show a 101,000% improvement 122P09.
  • l l'nc drum spcctY is dclincd ns arctic oi the total spectral energy required to produce a constant potential discharge from a fixed starting potentinl comparing the test drums to the standard selenium drum.
  • Each drum was charged to 1,000 volts positive potential under dark room conditions and discharged in separate tests with uniform exposure to the three light sources set forth undcr DRUM SPEED".
  • Print quality is a subjective rating of the acceptability of (black on white) xcrographic prints on the basis of background density, image sharpness, resolution, low density reproduction (black on white subject), and color reproduction.
  • Color reproduction relates to the ability of a drum to copy from color on white subiccts and color on color subjects.
  • the tri-layer drums are capable of producing 100,000 prints or copies which are superior in overall print quality and color response to that of the standard selenium test drum.
  • the tri-layer drums exhibited an increase in speed of approximately twice that of standard selenium.
  • EXAMPLE VIII The plate of Example I is used to form a color print from an original image in the form of a color transparency.
  • the plate is imaged as follows: The plate is uniformly corona charged to a positive acceptance potential of about 1,000 volts. Using a white light source, the plate is then exposed to the color transparency image through a red filter. The latent image formed by this exposure is then developed by cascading cyan developer particles over the plate. The developed cyan particulate image is then transferred to a receiver sheet of white bond paper. The above imaging procedure is then repeated on the plate by exposing through a green filter, followed by developing with magenta developer and transferring the magenta particulate image to the same receiver sheet in exact register with the previous cyan image.
  • the developing step is repeated a third time using a blue filter and developing with yellow developer particles.
  • the yellow particulate image is then transferred to the same receiver sheet in exact register with the two previous images.
  • the composite color image contained on the receiver sheet is then fixed by heat fusing to form a permanent color copy of the original color transparency.
  • a second color image is made in the form of a color transparency by repeating the above process and substituting a sheet of cellulose acetate as the receiver sheet in place of the white paper.
  • EXAMPLE IX A series of 36 plates having varying thicknesses for the two top photoconductive layers are made according to the method of Example I. The thickness of the selenium is kept constant at about 60 microns. The thickness of the various layers for each of these plates are tabulated in Table II below. The plates are numbered l-36, respectively.
  • the tri-layer photoreceptor of the instant invention exhibits its lowest sensitivity in the green portion of the visible spectrum. As stated above, it has been found that a sensitivity of at least 0.1 cm /erg at any wavelength in either the blue, green,
  • the sensitivity with respect to the thickness of the two top layers is measured at two wavelengths within this portion of the visible spectrum. These wavelengths are 525 nanometers and 550 nanometers respectively, and as will presently be shown, illustrate the critical thickness of the two top layers which are necessary in order to maintain a minimum sensitivity in the green region. Sensitivities greater than 0.1 cm lerg are exhibited by the instant photoreceptor in the region from 350 to 525 nanometers and from about 550 to 700 nanometers.
  • the spectral sensitivity is defined as the reciprocal of the incident energy required to produce a specific response. As defined in the instant application, this is the reciprocal energy necessary to produce a 25 percent discharge for a photoreceptor charged to an initial field of 16.5 volts/micron. This corresponds to a discharge of 250 volts for an initial positive charge of 1,000 volts placed on a 60-micron layer of the photoreceptor.
  • the sensitivity in the green portion of the visible spectrum is measured at 525 nanometers and 550 nanometers for each of the plates listed in Table ll using a filtered tungsten light source.
  • the plates are classified into four groupings: One grouping containing nine plates having a selenium-tellurium layer thickness of O. 1 microns with varying thicknesses for the arsenic-selenium layer; a second group comprising nine plates having a 0.3 micron selenium-tellurium layer and varying arsenic-selenium layer thicknesses; a third group contains nine plates having a selenium-tellurium layer of 0.6 microns with a varying thickness of the arsenic-selenium; and a fourth group of nine plates having a 1.0 micron layer of selenium-tellurium with varying thicknesses for the arsenic-selenium layer.
  • each of these four groups are plotted separately in FIGS. 2A, 2B, 2C, and 2D, respectively, with regard to the sensitivity (l/E) compared to the variation in top layer thickness for a single constant layer thickness for the selenium-tellurium layer.
  • the top layer thickness should be maintained in a range from about 0.l to about 0.6 microns (see FIG. 2D).
  • the maximum of 0.6 microns is essential in order to maintain at least a sensitivity of 0.1 to green light while the minimum thickness of 0.1 is essential to obtain good wear properties.
  • the range of thickness for the selenium-tellurium layer is from about 0.1 to 1.0 microns.
  • the tri-layer xerographic plate exhibits a panchromatic response and xerographic properties superior to that of vitreous selenium.
  • the tri-layer photoreceptor exhibits a capability for reproducing color copies.
  • the tri-layer drum shows greater stability for long run cycle applications than vitreous selenium which has an inherent crystallization problem at relatively short cycling times.
  • a composite photoreceptor member comprising:
  • a second layer comprising a vitreous seleniumtellurium alloy overlaying said selenium layer
  • a third layer comprising a vitreous arsenic-selenium alloy overlaying said selenium-tellurium layer, wherein said selenium-tellurium layer is about 0.1 to 1.0 microns in thickness, and said arsenic-selenium layer is about 0.1 to 0.6 microns in thickness.
  • vitreous selenium layer contains a halogen dopant.
  • vitreous selenium layer contains up to about 0.5 weight percent arsenic.
  • vitreous layer further contains a halogen dopant.
  • a photoconductive member comprising:
  • arsenic-selenium alloy contains about 5 percent arsenic by weight.
  • a photoconductive member comprising:
  • vitreous selenium layer contains arsenic in an amount of about 0.1 to 0.5 percent by weight.
  • vitreous selenium layer further contains a halogen dopant.
  • An imaging method comprising:
  • a photoconductive member comprising a conductive substrate coated with a vitreous selenium overlayer, a layer of a vitreous selenium-tellurium alloy 0.1 to 1.0 microns thick overlaying said selenium layer, and a layer of a vitreous arsenic-selenium alloy 0.1 to 0.6 microns thick overlaying said selenium-tellurium layer;
  • a method of forming a latent electrostatic image which comprises:
  • a photoconductive member having a conductive support, a layer of vitreous selenium overlaying said support, a layer of a vitreous selenium-tellurium alloy about 0.1 to 1.0 microns thick overlaying said selenium layer, and a layer of a vitreous arsenic-selenium alloy about 0.1 to 0.6 microns thick overlaying said seleniumtellurium layer;

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
US50265A 1966-10-03 1970-06-26 Tri-layered selenium doped photoreceptor Expired - Lifetime US3655377A (en)

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US58368666A 1966-10-03 1966-10-03
US5026570A 1970-06-26 1970-06-26

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US3894870A (en) * 1970-05-29 1975-07-15 Katsuragawa Denki Kk Photosensitive elements for use in electrophotography
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US4513031A (en) * 1983-09-09 1985-04-23 Xerox Corporation Process for forming alloy layer
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US4554230A (en) * 1984-06-11 1985-11-19 Xerox Corporation Electrophotographic imaging member with interface layer
US4572883A (en) * 1984-06-11 1986-02-25 Xerox Corporation Electrophotographic imaging member with charge injection layer
US4609605A (en) * 1985-03-04 1986-09-02 Xerox Corporation Multi-layered imaging member comprising selenium and tellurium
GB2176020A (en) * 1985-05-25 1986-12-10 Licentia Gmbh Electrophotographic recording material
US4661428A (en) * 1981-01-14 1987-04-28 Ricoh Co., Ltd. Composite photosensitive elements for use in electrophotography and process of forming images using same
US4701395A (en) * 1985-05-20 1987-10-20 Exxon Research And Engineering Company Amorphous photoreceptor with high sensitivity to long wavelengths
EP0258889A3 (en) * 1986-09-03 1988-10-12 Matsushita Electric Industrial Co., Ltd. Color electrophotographic method
JPS63279258A (ja) * 1987-05-11 1988-11-16 Matsushita Electric Ind Co Ltd 電子写真感光体
US4837099A (en) * 1987-10-26 1989-06-06 Fuji Electric Co., Ltd. Multilayer photoconductor for electrophotography
US5162182A (en) * 1990-11-01 1992-11-10 Fuji Electric Co., Ltd. Photosensitive member for electrophotography with interference control layer
US5300784A (en) * 1992-06-01 1994-04-05 Xerox Corporation Selenium alloy x-ray imaging member on transparent substrate
US6110631A (en) * 1997-05-14 2000-08-29 Fuji Electric Co., Ltd. Photoconductor for electrophotography and method of manufacturing and using a photoconductor
US20070023747A1 (en) * 2005-07-28 2007-02-01 Xerox Corporation Positive charging photoreceptor
US20090316167A1 (en) * 2008-06-19 2009-12-24 Kunikazu Sato Image forming apparatus, computer readable storage medium and image formation processing method

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US3894870A (en) * 1970-05-29 1975-07-15 Katsuragawa Denki Kk Photosensitive elements for use in electrophotography
US3849129A (en) * 1970-10-27 1974-11-19 Katsuragawa Denki Kk ELECTROPHOTOGRAPHIC ELEMENT CONTAINING Se-Te ALLOY LAYERS
US3816116A (en) * 1970-12-29 1974-06-11 Canon Kk N-type photosensitive member for electrophotography
US3915076A (en) * 1972-12-30 1975-10-28 Mita Industrial Co Ltd Photoconductive plate which is sensitive when charged either positively or negatively
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US4040985A (en) * 1975-04-16 1977-08-09 Hitachi, Ltd. Photoconductive films
FR2309906A1 (fr) * 1975-04-28 1976-11-26 Xerox Corp Elements photorecepteurs composites a base de selenium vitreux
US4202937A (en) * 1976-05-27 1980-05-13 Canon Kabushiki Kaisha Electrophotographic photosensitive member having no fatigue effect
US4170476A (en) * 1976-06-30 1979-10-09 Fuji Xerox Co., Ltd. Layered photoconductive element having As and/or Te doped with Ga, In or Tl intermediate to Se and insulator
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US4187104A (en) * 1978-06-30 1980-02-05 Xerox Corporation Electrophotographic photoreceptor with composite interlayer and method of making
EP0021751A1 (en) * 1979-06-15 1981-01-07 Hitachi, Ltd. Electrophotographic plate and a process for preparation of such a plate
US4314014A (en) * 1979-06-15 1982-02-02 Hitachi, Ltd. Electrophotographic plate and process for preparation thereof
US4287279A (en) * 1980-03-05 1981-09-01 Xerox Corporation Overcoated inorganic layered photoresponsive device and process of preparation
US4297424A (en) * 1980-03-05 1981-10-27 Xerox Corporation Overcoated photoreceptor containing gold injecting layer
US4286033A (en) * 1980-03-05 1981-08-25 Xerox Corporation Trapping layer overcoated inorganic photoresponsive device
US4318973A (en) * 1980-03-05 1982-03-09 Xerox Corporation Overcoated inorganic layered photoresponsive device and process of use
US4330610A (en) * 1980-03-05 1982-05-18 Xerox Corporation Method of imaging overcoated photoreceptor containing gold injecting layer
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US4296191A (en) * 1980-06-16 1981-10-20 Minnesota Mining And Manufacturing Company Two-layered photoreceptor containing a selenium-tellurium layer and an arsenic-selenium over layer
US4661428A (en) * 1981-01-14 1987-04-28 Ricoh Co., Ltd. Composite photosensitive elements for use in electrophotography and process of forming images using same
US4338387A (en) * 1981-03-02 1982-07-06 Xerox Corporation Overcoated photoreceptor containing inorganic electron trapping and hole trapping layers
US4513072A (en) * 1981-09-05 1985-04-23 Licentia Patent-Verwaltungs-Gmbh Dual layer electrophotographic recording material containing a layer of selenium, arsenic and halogen, and thereabove a layer of selenium and tellurium
USRE32744E (en) * 1981-09-05 1988-09-06 Licentia Patent-Verwaltungs- Gmbh Dual layer electrophotographic recording material containing a layer of selenium, arsenic and halogen, and thereabove a layer of selenium and tellurium
JPS59208554A (ja) * 1983-04-25 1984-11-26 ゼロツクス・コ−ポレ−シヨン 被覆した感光装置
EP0123461A3 (en) * 1983-04-25 1986-01-15 Xerox Corporation Overcoated photoresponsive devices
US4513031A (en) * 1983-09-09 1985-04-23 Xerox Corporation Process for forming alloy layer
US4554230A (en) * 1984-06-11 1985-11-19 Xerox Corporation Electrophotographic imaging member with interface layer
US4572883A (en) * 1984-06-11 1986-02-25 Xerox Corporation Electrophotographic imaging member with charge injection layer
US4609605A (en) * 1985-03-04 1986-09-02 Xerox Corporation Multi-layered imaging member comprising selenium and tellurium
US4701395A (en) * 1985-05-20 1987-10-20 Exxon Research And Engineering Company Amorphous photoreceptor with high sensitivity to long wavelengths
GB2176020B (en) * 1985-05-25 1989-07-26 Licentia Gmbh Electrophotographic recording material
US4717635A (en) * 1985-05-25 1988-01-05 Licentia Patent-Verwaltungs-Gmbh Electrophotographic recording material
GB2176020A (en) * 1985-05-25 1986-12-10 Licentia Gmbh Electrophotographic recording material
EP0258889A3 (en) * 1986-09-03 1988-10-12 Matsushita Electric Industrial Co., Ltd. Color electrophotographic method
JPS63279258A (ja) * 1987-05-11 1988-11-16 Matsushita Electric Ind Co Ltd 電子写真感光体
US4837099A (en) * 1987-10-26 1989-06-06 Fuji Electric Co., Ltd. Multilayer photoconductor for electrophotography
US5162182A (en) * 1990-11-01 1992-11-10 Fuji Electric Co., Ltd. Photosensitive member for electrophotography with interference control layer
US5300784A (en) * 1992-06-01 1994-04-05 Xerox Corporation Selenium alloy x-ray imaging member on transparent substrate
US6110631A (en) * 1997-05-14 2000-08-29 Fuji Electric Co., Ltd. Photoconductor for electrophotography and method of manufacturing and using a photoconductor
US20070023747A1 (en) * 2005-07-28 2007-02-01 Xerox Corporation Positive charging photoreceptor
US7491989B2 (en) 2005-07-28 2009-02-17 Xerox Corporation Positive charging photoreceptor
US20090316167A1 (en) * 2008-06-19 2009-12-24 Kunikazu Sato Image forming apparatus, computer readable storage medium and image formation processing method
US8253962B2 (en) * 2008-06-19 2012-08-28 Konica Minolta Business Technologies, Inc. Image forming apparatus, computer readable storage medium and image formation processing method

Also Published As

Publication number Publication date
DE1597882A1 (de) 1970-10-01
NL155376B (nl) 1977-12-15
BE704447A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-02-01
DE1597882B2 (de) 1976-09-09
GB1193348A (en) 1970-05-28
NL6713193A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-04-04
SE321857B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-03-16

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