US3646350A - Light-detecting electron multiplier with field emission photoconductive cathode - Google Patents
Light-detecting electron multiplier with field emission photoconductive cathode Download PDFInfo
- Publication number
- US3646350A US3646350A US773078A US3646350DA US3646350A US 3646350 A US3646350 A US 3646350A US 773078 A US773078 A US 773078A US 3646350D A US3646350D A US 3646350DA US 3646350 A US3646350 A US 3646350A
- Authority
- US
- United States
- Prior art keywords
- cathode
- field emission
- light
- photoconductive
- emission cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
Definitions
- said detector comprising basically a field [51] Int. Cl .1101] 39/12 emission cathode of a photoconductive semiconductor in the [58] Field of Search ..250/211, 213 T, 83.3 IR, 238, form of a pointed whisker, and an electron collector for collecting the electrons emitted from said cathode, an appropriate accelerating voltage being applied between said cathode and said collector.
- This invention relates to a light detector based on the fact that the field emission from a photoconductive material varies depending on a variation in the intensity of incident light.
- the light detector of this invention is of a novel construction and belongs to none of the conventional types of light detectors such as the photoelectric elements, thermocouples, thermopiles and various photoconductive semiconductors.
- the light detector of this invention is based on the principle that the field emission from a photoconductive semiconductor body in a low temperature is affected by incident light.
- the above principle is combined with a known technique for increasing the electronic emission such as the channel type secondary electron multiplication to raise the sensitivity of the detection of light.
- FIG. 1 is a schematic diagram illustrating the structure and operation of a light detector embodying this invention
- FIG. 2a is a circuit diagram for the explanation of the operating principle of the light detector of this invention.
- FIG. 2b is a diagram showing characteristics of the circuit shown in FIG. 2a.
- reference numeral 1 indicates a whisker or a field emission cathode with an end pointed by an etching process so that an extremely high-electric field can be produced at the end, said cathode being made of a photoconductive semiconductor which is sensitive to light in the infrared range; a bridge 2 for supporting said field emission cathode, which serves also as a heater for cleaning the point of the cathode before each operation; and feedthrough wires 3 connecting said support bridge 2 to lead wires 31.
- a stem portion of the envelope is shaped to have a deep recess 4 to be utilized as a Dewar flask for receiving liquid nitrogen 5 which refrigerates the field emission cathode 1 through the feedthrough wires 3 and the support bridge 2.
- Reference numeral 6 indicates an accelerating electrode placed at the front of the field emission cathode l for guiding the emitted electron beam; an infrared ray 7 projected from the outside to the field emission cathode; a window 8 of quartz or crystalline alkali halide for introducing said infrared ray 7; and a channel-type secondary electron multiplier 9.
- the electron beam from the field emission cathode l is introduced into the pipelike multiplier 9 through the entrance 91 thereof and the multiplied beam is let out from the exit 92 to be imparted to a collector 10.
- an output current flows through the resistor 11 and an output voltage appears at the terminal 12.
- Numeral 13 indicates the accelerating voltage source; 14 a retarding voltage source for appropriately retarding the accelerated electron beam before it reaches the entrance 91 of the electron multiplier 9; 15 an accelerating voltage source for applying a voltage between the entrance 91 and the exit 92 of the electron multiplier 9; and 16 an accelerating voltage source for directing the electron beam from the electron multiplier 9 to the collector 10.
- FIG. 2a is a simplified circuit equivalent to the essential part of this invention, in which V indicates the voltage of the accelerating voltage source and I is the field emission current from the field emission cathode l.
- V indicates the voltage of the accelerating voltage source
- I is the field emission current from the field emission cathode l.
- the relation between the accelerating voltage and the field emission current under vari ous intensities of the incident light projected onto the field emission cathode is shown in FIG. 2b, in which the abscissa is calibrated by the reciprocal of V instead of V and the curves a, b, c and d correspond to the respective light conditions, the curve a corresponding to the highest intensity of light and the curve d to the lowest.
- a light detector comprising a field emission cathode of a photoconductive semiconductor; means for detecting variations in field emissions due to changes in light; a channel-type secondary electron multiplier disposed in spatial relation to said field emission cathode such that electrons emitted from said cathode enter said multiplier in a direction which imparts a high-multiplying factor to said electrons; means for indirectly refrigerating said field emission cathode; and at least one accelerating electrode disposed in relation to said field emission cathode to guide an electron beam emitted from said cathode.
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Weting (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7272867 | 1967-11-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3646350A true US3646350A (en) | 1972-02-29 |
Family
ID=13497690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US773078A Expired - Lifetime US3646350A (en) | 1967-11-10 | 1968-11-04 | Light-detecting electron multiplier with field emission photoconductive cathode |
Country Status (5)
Country | Link |
---|---|
US (1) | US3646350A (de) |
DE (1) | DE1807320B2 (de) |
FR (1) | FR1590988A (de) |
GB (1) | GB1190468A (de) |
NL (1) | NL6815938A (de) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1300127A (en) * | 1916-07-21 | 1919-04-08 | Gen Electric | Protective device. |
US2692948A (en) * | 1948-12-29 | 1954-10-26 | Kurt S Lion | Radiation responsive circuits |
US3175083A (en) * | 1960-12-14 | 1965-03-23 | Ontario Research Foundation | Method and apparatus for detecting x-rays |
US3233111A (en) * | 1962-05-31 | 1966-02-01 | Union Carbide Corp | Silicon whisker photocell with short response time |
US3370172A (en) * | 1963-06-27 | 1968-02-20 | Inst Plasmaphysik Gmbh | Arrangement for producing two-dimensional images of an infra-red radiator |
US3449582A (en) * | 1966-02-02 | 1969-06-10 | Westinghouse Electric Corp | Electron multiplier device having an electrically insulating secondary emission control surface |
-
1968
- 1968-11-04 US US773078A patent/US3646350A/en not_active Expired - Lifetime
- 1968-11-06 DE DE19681807320 patent/DE1807320B2/de not_active Withdrawn
- 1968-11-08 FR FR1590988D patent/FR1590988A/fr not_active Expired
- 1968-11-08 NL NL6815938A patent/NL6815938A/xx unknown
- 1968-11-11 GB GB53350/68A patent/GB1190468A/en not_active Expired
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1300127A (en) * | 1916-07-21 | 1919-04-08 | Gen Electric | Protective device. |
US2692948A (en) * | 1948-12-29 | 1954-10-26 | Kurt S Lion | Radiation responsive circuits |
US3175083A (en) * | 1960-12-14 | 1965-03-23 | Ontario Research Foundation | Method and apparatus for detecting x-rays |
US3233111A (en) * | 1962-05-31 | 1966-02-01 | Union Carbide Corp | Silicon whisker photocell with short response time |
US3370172A (en) * | 1963-06-27 | 1968-02-20 | Inst Plasmaphysik Gmbh | Arrangement for producing two-dimensional images of an infra-red radiator |
US3449582A (en) * | 1966-02-02 | 1969-06-10 | Westinghouse Electric Corp | Electron multiplier device having an electrically insulating secondary emission control surface |
Also Published As
Publication number | Publication date |
---|---|
DE1807320A1 (de) | 1969-08-07 |
GB1190468A (en) | 1970-05-06 |
DE1807320B2 (de) | 1971-05-13 |
FR1590988A (de) | 1970-04-20 |
NL6815938A (de) | 1969-05-13 |
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