US3638049A - Network having a resistance the temperature coefficient of which is variable at will - Google Patents

Network having a resistance the temperature coefficient of which is variable at will Download PDF

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Publication number
US3638049A
US3638049A US825825A US3638049DA US3638049A US 3638049 A US3638049 A US 3638049A US 825825 A US825825 A US 825825A US 3638049D A US3638049D A US 3638049DA US 3638049 A US3638049 A US 3638049A
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United States
Prior art keywords
transistor
voltage divider
network
temperature coefficient
base
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Expired - Lifetime
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US825825A
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English (en)
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Johannes Gerardus Wouterus Bom
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US Philips Corp
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US Philips Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/463—Sources providing an output which depends on temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes

Definitions

  • ABSTRACT A temperature compensation network having a resistance that exhibits a temperature coefticient that is adjustable substantially independently of the voltage applied to the network.
  • the network includes a resistive voltage divider connected in parallel with the emitter-collector path of a transistor. The base of the transistor is connected to a tapping on the voltage divider.
  • a zener diode having a zero temperature coefficient relative to the transistor temperature coefficient is' connected to the voltage divider, whereby the network exhibits a net negative temperature coefficient of resistance.
  • the present invention relates to a network having a resistance with a temperature coefficient that is variable at will.
  • Such networks are often required, especially in semiconductor technology, in order to compensate for the temperature coefficient of an entire circuit arrangement or of an important part thereof.
  • the British Pat. specification No. 1,093,316 describes a circuit arrangement for compensating the temperature-dependent variations of a current flowing through a temperature-dependent element supplied through the emitter-collector path of a first transistor, the current flowing through the said transistor being controlled by a control magnitude.
  • the control circuit includes, for temperature compensation, the emitter-collector path of a further transistor having a resistive voltage divider connected in parallel therewith and to the tapping of which the base of the further transistor is connected.
  • the resistance value of the part of the voltage divider connected between the emitter and the base of the further transistor is smaller than the value of the base-emitter input impedance of the further transistor, and the current through the whole of the voltage divider is smaller than the collector current of the further transistor.
  • This arrangement thus mainly comprises a network having a resistance with a temperature coefficient that is variable at will and including the parallel connection of a resistive voltage divider and the emitter-collector path of a transistor the base of which is connected to the tapping of the voltage divider.
  • the temperature coefficient C,,,, of this network is equal to the temperature coefficient C of the internal base-emitter remultiplied by the ratio V,/V,, between the voltage set up across the network (V and the voltage operative between the base and the emitter (V,,,,) of the transistor. Consequently, C is also influenced by the choice of V, and it is not possible to obtain a given desired value of C for each arbitrary value of V For a given value of C,,,, a
  • an element having a temperature coefficient substantially equal to, arid including at least one Zener diode is connected in the voltage divider so that the temperature coefficient of the network can be chosen substantially independently of the reverse collector voltage set up across the network.
  • FIG. 1 is the circuit diagram of the network used in the arrangement described in British Pat. specification No. 1,093,316,
  • FIG. 2 is the circuit diagram of a modification of this network described in the said patent specification
  • FIG. 3 is the circuit diagram of a first embodiment of the network in accordance with the invention.
  • FIG. 4 is the circuit diagram of a second embodiment thereof.
  • FIG. 5 is the circuit diagram of a third simplified embodiment thereof.
  • FIG. 1 shows the network described in British Pat. specification No. 1,093,3l6 and having a temperature coefficient which is variable at will.
  • This network is constituted by the parallel connection of the resistive voltage divider comprising resistors 2, 3 and 4 and of the emitter-collector path of a transistor 1, for example, an NPN-transistor, the base of which is connected to the junction of the resistors 2 and 3 of the voltage divider.
  • the value of the part 2 of the voltage divider connected between the-emitter. and the base of the transistor 1 is made smaller than that of the base-emitter input impedance of the transistor 1.
  • the temperature coefficient C, of this variation is equal to V,/V,,,., or approximately R,/R times the temperature coefficient C of the base-emitter resistance of the transistor, provided that the collector-base current gain factor a'1 of the transistor is greater than the feed back factor R lR- which limits the gain.
  • Varying the voltage V causes the base-emitter voltage V and hence the base current 1 and the collector current I, to vary, which usually is undesirable.
  • the modification shown in FIG. 2 and described in the above-mentioned patent specification has l of freedom more.
  • the resistive voltage divider is provided with a second tapping between two parts 2 and 2' of its base branch, its collector-base branch comprising only the resistor 3.
  • the second tapping is connected through a further resistor 5 to separate voltage source +Vg of, for example, constant or stabilized forward base voltage.
  • the resistive voltage divider 2, 2, 3 satisfies the above conditions so that:
  • the voltage V, of the auxiliary voltage source and the valve of the resistor 5 are chosen so that the forward base-emitter voltage V and the base-current l are mainly determined by these magnitudes and that the resistance value R of the further resistor 5 has substantially no influence on the effective value of the base-emitter branch of the voltage divider 2, 2, 3:
  • the resistive voltage divider comprises a resistor 2 connected between the base and the emitter of a transistor 1 and a resistor 3 with the end remote from the base connected to the tapping on a further resistive voltage divider 9, 9'.
  • the latter voltage divider is connected in parallel with a Zener diode 7, this parallel connection being connected at one end to the voltage source +V, and at the other end through a resistor 8 to the emitter of the transistor 1.
  • the temperature coefficient of the network is tt x 2 Ir 9 9" 7i where C, is the temperature coefficient of the Zener diode 7.
  • This Zener diode may be selected to have a very small temperature coefficient, for example, a coefficient which compared with that of the transistor, C is substantially equal to zero.
  • the Zener voltage V, across the diode 7 must be at least equal to the desired range V,,,, ,-V of the voltage across the network.
  • the overall temperature coefiicient C,,,, of the network may be freely chosen by means of the ratio R /R and of the temperature coefficient C of the transistor 1, while independently thereof the collector current I, and consequently the voltage V, across the network may be varied within given limits by varying the voltage across the voltage divider 2, 3.
  • the collector circuit of the transistor 1 further includes a protective resistor 6 for limiting I to a permissible value, for example, in the case of an excessive voltage across the voltage divider 2, 3:
  • the described network may be used as a temperature-dependent compensating resistor having a temperature coefficient which is adjustable or variable at will.
  • the network may be used as a first stage of the arrangement which compensates for the influence of the temperature. the control voltage for the next stage being derived either between the emitter and the collector of the transistor 1 or, with inversion of the temperature influence, across the resistor 6.
  • FIG. 4 is the circuit diagram of a second embodiment of the network in accordance with the invention.
  • the Zener diode 7 is connected in series with two diodes 10 connected in the forward direction so that its temperature coefficient is compensated.
  • the series connection of the diodes 7 and 10, shunted by the voltage divider 9, 9', is included in the first voltage divider between the resistors 2 and 3. Since the temperature coefficient of the section 7, I0 is substantially equal to zero, the overall temperature coefficient C again is equal to and hence can be chosen by means of the resistors 2 and 3, while independently thereof the working point of the transistor 1 can be determined by means of the second voltage divider 9,9.
  • the networks in accordance with the present invention are especially intended for use in series with other elements, such as resistors, so as to compensate for the temperature coefficient or coefficients either of one or more further elements of a circuit or arrangement, or of an entire circuit or arrangement, for example, as described in the above-mentioned British Pat. specification No. 1,093,316. At the same time they may serve as input stages of such circuits or arrangements.
  • a temperature dependent network having a resistance with a temperature coefficient that is variable at will comprising, a transistor, a plurality of resistance elements connected to form a resistive voltage divider, means connecting the resistive voltage divider in parallel with the emitter-collector path of the transistor, means connecting the base of the transistor to a tapping on the voltage divider so that the resistance value of the part of the voltage divider connected between the emitter and the base of the transistor is smaller than the value of the base-emitter input impedance of the transistor, the overall resistance value of the voltage divider being chosen so that the current through the whole of the voltage divider is smaller than the collector current of the transistor, an element having a temperature coefficient that is substantially equal to zero relative to the transistor temperature coefficient and including at least one Zener diode, and means connecting said element in the voltage divider so that the temperature coefficient of the network can be chosen substantially independently of the reverse collector voltage set up across the network.
  • a temperature-sensitive network with a temperature coefficient of resistance that is adjustable substantially independently of the voltage appliedto the network comprising, a pair of input terminals, a transistor with a given temperature coefficient, a constant voltage element with a temperature coefficient that is negligible relative to said given temperature coefficient of the transistor, a resistive voltage divider, means connecting the constant voltage element in series with the voltage divider across the network input terminals, and means connecting the emitter-collector path of the transistor in parallel with the resistive voltage divider and the base electrode to a tapping on the voltage divider such thatthe resistance of the part of the voltage divider between the base and emitter of the transistor is smaller than the transistor baseemitter input impedance.
  • a network as claimed in claim 6 wherein said constant voltage element comprises a Zener diode in series with a diode of approximately equal and opposite temperature coefficient.
  • a network as claimed in claim 9 wherein the first voltage divider comprises first and second resistors, and wherein said first resistor, said Zener diode and said second resistor are serially connected in the order named across the network input terminals.
  • a network as claimed in claim 6 further comprising a second resistive voltage divider connected in parallel with said constant voltage element, and means connecting a tapping on said second voltage divider to the base of the transistor.
  • a network as claimed in claim 13 wherein said constant voltage element comprises a Zener diode.
  • a temperature sensitive network with a temperature coefficient of resistance that is adjustable substantially independently of the voltage applied to the network comprising, a pair of input terminals, a transistor with a given temperature coefficient, a zener diode with a temperature coefficient that is negligible relative to the transistor temperature coefficient, a first resistive voltage divider, a second resistive voltage divider connected in parallel with the zener diode and across the input terminals, means connecting the first voltage divider to a tapping on the second voltage divider, and means including a part of said second voltage divider for connecting the emittercollector path of the transistor in parallel with the first resistive voltage divider and the base electrode to a tapping thereon such that the resistance'of the part of the first voltage divider between the base and emitter of the transistor is smaller than the transistor base-emitter inputfimpedance.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
US825825A 1968-05-17 1969-05-19 Network having a resistance the temperature coefficient of which is variable at will Expired - Lifetime US3638049A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6806969A NL6806969A (enrdf_load_stackoverflow) 1968-05-17 1968-05-17

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US3638049A true US3638049A (en) 1972-01-25

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US (1) US3638049A (enrdf_load_stackoverflow)
BE (1) BE733209A (enrdf_load_stackoverflow)
DE (1) DE1920232B2 (enrdf_load_stackoverflow)
ES (1) ES367232A1 (enrdf_load_stackoverflow)
FR (1) FR2008765A1 (enrdf_load_stackoverflow)
GB (1) GB1250243A (enrdf_load_stackoverflow)
NL (1) NL6806969A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916263A (en) * 1971-12-13 1975-10-28 Honeywell Inf Systems Memory driver circuit with thermal protection
US3968685A (en) * 1973-02-16 1976-07-13 Her Majesty The Queen In Right Of Canada As Represented By The Minister Of National Defence Transistor anemometer
US4352053A (en) * 1980-04-28 1982-09-28 Fujitsu Limited Temperature compensating voltage generator circuit
EP0074919A1 (de) * 1981-09-08 1983-03-23 Siemens Aktiengesellschaft Schaltungsanordnung mit einem Messumformer, insbesondere mit einem Halbleiter-Druckaufnehmer
US4413192A (en) * 1980-05-20 1983-11-01 Licentia Patent-Verwaltungs-Gmbh Transistor firing circuit
US4736126A (en) * 1986-12-24 1988-04-05 Motorola Inc. Trimmable current source
US5099381A (en) * 1989-11-08 1992-03-24 National Semiconductor Corporation Enable circuit with embedded thermal turn-off
EP0600003A4 (en) * 1991-08-21 1994-11-02 Analog Devices Inc METHOD FOR COMPENSATING FOR THE TEMPERATURE OF ZENER DIODES HAVING TEMPERATURE COEFFICIENTS EITHER POSITIVE OR NEGATIVE.
WO2003052849A3 (en) * 2001-12-14 2003-09-25 Ballard Power Systems Fuel cell system shunt regulator method and apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3214706A (en) * 1962-01-09 1965-10-26 Burroughs Corp Wide band amplifier with adjustable d.c. output level
US3488529A (en) * 1966-12-14 1970-01-06 Sperry Rand Corp Temperature sensing current source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3214706A (en) * 1962-01-09 1965-10-26 Burroughs Corp Wide band amplifier with adjustable d.c. output level
US3488529A (en) * 1966-12-14 1970-01-06 Sperry Rand Corp Temperature sensing current source

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916263A (en) * 1971-12-13 1975-10-28 Honeywell Inf Systems Memory driver circuit with thermal protection
US3968685A (en) * 1973-02-16 1976-07-13 Her Majesty The Queen In Right Of Canada As Represented By The Minister Of National Defence Transistor anemometer
US4352053A (en) * 1980-04-28 1982-09-28 Fujitsu Limited Temperature compensating voltage generator circuit
US4413192A (en) * 1980-05-20 1983-11-01 Licentia Patent-Verwaltungs-Gmbh Transistor firing circuit
EP0074919A1 (de) * 1981-09-08 1983-03-23 Siemens Aktiengesellschaft Schaltungsanordnung mit einem Messumformer, insbesondere mit einem Halbleiter-Druckaufnehmer
US4736126A (en) * 1986-12-24 1988-04-05 Motorola Inc. Trimmable current source
US5099381A (en) * 1989-11-08 1992-03-24 National Semiconductor Corporation Enable circuit with embedded thermal turn-off
EP0600003A4 (en) * 1991-08-21 1994-11-02 Analog Devices Inc METHOD FOR COMPENSATING FOR THE TEMPERATURE OF ZENER DIODES HAVING TEMPERATURE COEFFICIENTS EITHER POSITIVE OR NEGATIVE.
WO2003052849A3 (en) * 2001-12-14 2003-09-25 Ballard Power Systems Fuel cell system shunt regulator method and apparatus
US20050266283A1 (en) * 2001-12-14 2005-12-01 Wardrop David S Fuel cell system shunt regulator method and apparatus
US7132185B2 (en) 2001-12-14 2006-11-07 Ballard Power Systems Inc. Fuel cell system shunt regulator method and apparatus

Also Published As

Publication number Publication date
BE733209A (enrdf_load_stackoverflow) 1969-11-17
FR2008765A1 (enrdf_load_stackoverflow) 1970-01-23
ES367232A1 (es) 1971-04-01
DE1920232A1 (de) 1970-09-24
NL6806969A (enrdf_load_stackoverflow) 1969-05-27
DE1920232B2 (de) 1976-06-10
GB1250243A (enrdf_load_stackoverflow) 1971-10-20

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