US3630587A - Activating method for cesium activated iii-v compound photocathode using rare gas bombardment - Google Patents
Activating method for cesium activated iii-v compound photocathode using rare gas bombardment Download PDFInfo
- Publication number
- US3630587A US3630587A US806192A US3630587DA US3630587A US 3630587 A US3630587 A US 3630587A US 806192 A US806192 A US 806192A US 3630587D A US3630587D A US 3630587DA US 3630587 A US3630587 A US 3630587A
- Authority
- US
- United States
- Prior art keywords
- rare gas
- cesium
- compound
- photocathode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052792 caesium Inorganic materials 0.000 title claims abstract description 21
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 150000001875 compounds Chemical class 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000003213 activating effect Effects 0.000 title claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 7
- 238000010849 ion bombardment Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract description 4
- 230000004913 activation Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
Definitions
- the invention relates to a method of manufacturing an electric discharge tube, having a photocathode, the active constituent of which consists of a strongly p-conductive A E,- compound which is activated by an alkali metal or an alkaline earth metal.
- An A,,,B,-compound is to be understood to mean herein normally an intermetallic compound of one of the elements (A,,,) of the third group of the periodic system, boron, aluminum, gallium, indium on the one hand, with an element B,- of the fifth group of the periodic system, nitrogen, phosphorus, arsenic, antimony on the other hand. Mixed crystals are also included.
- Such photocathodes were described by J. .l. Scheer and J. van Laar in Solid State Communications" 3, 189-l93, l965.
- the A B cathode was formed from a monocrystal which was cleaved in vacuo.
- an electric discharge tube having a photocathode the active constituent of which consists of a strongly p-conductive A E,- compound which is activated by an alkali metal or alkaline earth metal
- the not yet activated compound in the tube is subjected to a heating process at a temperature of maximally 300 C. for a few hours, after which the surface of the compound is subjected to a bombardment by slow rare gas ions.
- the temperature during the heating process is chosen to be so low because otherwise oxidation of the compound occurs by released residual gases.
- the temperature is also low enough to avoid out-diffusion of the doping substance from the compound.
- various layers of the surface are removed, so that contaminations at the surface, for example, oxides are also removed.
- the energy of these ions is preferably halved during a second part of the treatment.
- the energies for argon are then maximally 100 and 50 ev., respectively.
- the current density of the ion bombardment may be of the order of 30 uA per sq. cm.
- the reduced energy produces a further removal without the formation of crystal defects.
- the high yields of the known photocathodes are obtained by activation with, for example, monolayers of cesium.
- the activation by means of cesium or a different activator may be continued, in a manner already proposed, until the photocurrent reduces again to approximately half. By admitting oxygen, the photoemission is increased again and the activation is repeated a few times in this manner. Often only 80 percent of the maximum yield is obtained.
- the method is continued until the activation comprises at most 5 to monolayers, while after the said oxygen treatment, a fraction of a monolayer is supplied. Substantially the same yield as in a monolayer is obtained, while the emerging electrons are substantially monoenergetic in contrast with the electrons emitted by a monolayer.
- the cathodes activated in this manner with various monolayers must be formed at temperatures of 150 to 170 C. for IS to 60 minutes before the fraction of the monolayer is provided. At the same time an improvement of crystal defects in the semiconductor compound is obtained.
- Reference numeral 1 in the drawing denotes a glass tube with exhaust tube 2 and light entrance window 3.
- the cathode 4 is a monocrystalline gallium arsenide plate the surface of which has (1 l0) orientation.
- 5 is a gallium arsenide layer, 10 microns thickness, provided epitaxially on the surface. The layer is doped with 3X10 atoms of zinc per ccm. Making it strongly P-type.
- 6 is the annular anode for the photocathode, 7 is a gridlike electrode and 8 is a platelike electrode.
- 9 is a cesium evaporation source. After providing all the electrodes in the tube, it is heated in chlorothene, for degreasing, at 60 C. for 2 minutes. The exhaust tube 2 is then connected to the pump. After evacuation the cathode with the whole tube is heated at 275 C. for 4 hours.
- Pure argon is then admitted to the tube under a pressure of approximately 5X10 Torr. (Traces of oxygen are removed from the argon by a gettering substance).
- a discharge is ignited by closing switch 10 and a negative voltage of maximally volt is applied between the electrode 7 and the cathode 4 by closing switch 11 and hence an argon ion current of 30 ua./sq.cm. is drawn to the surface of the cathode 4 for 30 minutes producing the slow rare gas ion bombardment of the photocathode as previously described.
- the voltage is then reduced by rheostat 12 to 50 volts and current is drawn for another 15 minutes.
- the cesium source 9 is energized by switch 13 and so much cesium is evaporated from the cesium evaporator 9 already degassed during the heating process until the cathode 4 has approximately a maximum photoemission towards the anode 6. This is measured during the cesium activation step in the usual manner by applying a voltage between the anode 6 and cathode 4 via switch 14 and measuring the current in the external circuit, which is the photocathodes photocurrent, while light is incident thereon from above. Then so much more cesium is evaporated onto the cathode surface 5 until the measured photocurrent is halved.
- Oxygen of approximately 5X10 Torr is then admitted to the tube 1 for such a period of time until the measured photocurrent again reaches a maximum. This cesium activation treatment and oxidation are repeated a few times until the photocurrent again very nearly reaches its first maximum.
- the cathode 4 is then heated at for 30 minutes after which cesium is again evaporated from the source 9 in a quantity which corresponds approximately to one-fourth to half of the first cesium addition. This corresponds to the monolayer fraction above described.
- a method of activating a photocathode within an electric discharge tube comprising a surface of a strongly P-type conductivity compound of an element selected from the group consisting of boron, aluminum, gallium, and indium with an element selected from the group consisting of nitrogen, phosphorus, arsenic, and antimony, and mixed crystals thereof, covered with an activating material of an alkali metal or alkaline earth metal, comprising the steps of heating the unactivated compound within an evacuated tube at an elevated temperature not exceeding 300 C. for several hours, thereafter subjecting the surface of the unactivated compound to slow rare gas ion bombardment with ions whose energy is maximally 100 ev., and thereafter bringing the activating material into contact with the bombarded surface of the compound.
- the rare gas ion bombardment step comprises a first part using rare gas ions of a given energy, and a later second part using rare gas ions whose energy is approximately half of the said given energy.
- the surface of the cathode is covered with a fraction of a monolayer of the activating material.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
- Electron Sources, Ion Sources (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19681639363 DE1639363C3 (de) | 1968-03-15 | 1968-03-15 | Verfahren zum Herstellen von einer elektrischen Entladungsröhre mit einer Photokathode, welche aus einer stark p-leitenden AIII-BV-Verbindung besteht |
Publications (1)
Publication Number | Publication Date |
---|---|
US3630587A true US3630587A (en) | 1971-12-28 |
Family
ID=5683999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US806192A Expired - Lifetime US3630587A (en) | 1968-03-15 | 1969-03-11 | Activating method for cesium activated iii-v compound photocathode using rare gas bombardment |
Country Status (7)
Country | Link |
---|---|
US (1) | US3630587A (de) |
BE (1) | BE729828A (de) |
CH (1) | CH489114A (de) |
ES (1) | ES364745A1 (de) |
FR (1) | FR2004044A1 (de) |
GB (1) | GB1207091A (de) |
NL (1) | NL6903628A (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3837723A (en) * | 1971-11-03 | 1974-09-24 | Galileo Electro Optics Corp | Method for making hybrid radiant energy sensor with solid state element and transfer energy-sensitive, electron-emissive surface |
US3960421A (en) * | 1972-03-27 | 1976-06-01 | U.S. Philips Corporation | Method of manufacturing a non-thermally emitting electrode for an electric discharge tube |
EP0206422A1 (de) * | 1985-06-24 | 1986-12-30 | Koninklijke Philips Electronics N.V. | Anordnung zur Elektronenemission mit einem das Elektronenaustrittspotential verringernden Material enthaltenden Behälter |
CN110706989A (zh) * | 2019-10-30 | 2020-01-17 | 南京工程学院 | 提高GaAs光电阴极稳定性的Cs/NF3激活方法 |
CN112908806A (zh) * | 2021-01-16 | 2021-06-04 | 南京理工大学 | 一种电子源封装 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8500596A (nl) * | 1985-03-04 | 1986-10-01 | Philips Nv | Inrichting voorzien van een halfgeleiderkathode. |
CN111261475B (zh) * | 2020-01-29 | 2022-07-08 | 北方夜视技术股份有限公司 | 用于制作光电倍增管的一体式多功能排气装置及使用方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1988525A (en) * | 1930-11-21 | 1935-01-22 | Emi Ltd | Photo-electric tube |
US2045637A (en) * | 1934-07-26 | 1936-06-30 | Philips Nv | Phototube |
US2072342A (en) * | 1930-06-14 | 1937-03-02 | C M Lab Inc | Photoelectric tube |
US2206713A (en) * | 1929-08-28 | 1940-07-02 | Gen Electric | Photoelectric apparatus |
US2237242A (en) * | 1938-01-05 | 1941-04-01 | Univ Illinois | Phototube |
US2529888A (en) * | 1946-06-29 | 1950-11-14 | Emi Ltd | Electron discharge device |
US3387161A (en) * | 1964-12-02 | 1968-06-04 | Philips Corp | Photocathode for electron tubes |
-
1969
- 1969-03-08 NL NL6903628A patent/NL6903628A/xx unknown
- 1969-03-11 US US806192A patent/US3630587A/en not_active Expired - Lifetime
- 1969-03-12 CH CH374769A patent/CH489114A/de not_active IP Right Cessation
- 1969-03-13 BE BE729828D patent/BE729828A/xx unknown
- 1969-03-13 ES ES364745A patent/ES364745A1/es not_active Expired
- 1969-03-17 FR FR6907598A patent/FR2004044A1/fr not_active Withdrawn
- 1969-03-17 GB GB03772/69A patent/GB1207091A/en not_active Expired
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2206713A (en) * | 1929-08-28 | 1940-07-02 | Gen Electric | Photoelectric apparatus |
US2072342A (en) * | 1930-06-14 | 1937-03-02 | C M Lab Inc | Photoelectric tube |
US1988525A (en) * | 1930-11-21 | 1935-01-22 | Emi Ltd | Photo-electric tube |
US2045637A (en) * | 1934-07-26 | 1936-06-30 | Philips Nv | Phototube |
US2237242A (en) * | 1938-01-05 | 1941-04-01 | Univ Illinois | Phototube |
US2529888A (en) * | 1946-06-29 | 1950-11-14 | Emi Ltd | Electron discharge device |
US3387161A (en) * | 1964-12-02 | 1968-06-04 | Philips Corp | Photocathode for electron tubes |
Non-Patent Citations (1)
Title |
---|
Photoemissive Materials by Sommer pp. 42 47 and 61 63 (publ. 1968 by John Wiley & Sons). * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3837723A (en) * | 1971-11-03 | 1974-09-24 | Galileo Electro Optics Corp | Method for making hybrid radiant energy sensor with solid state element and transfer energy-sensitive, electron-emissive surface |
US3960421A (en) * | 1972-03-27 | 1976-06-01 | U.S. Philips Corporation | Method of manufacturing a non-thermally emitting electrode for an electric discharge tube |
EP0206422A1 (de) * | 1985-06-24 | 1986-12-30 | Koninklijke Philips Electronics N.V. | Anordnung zur Elektronenemission mit einem das Elektronenaustrittspotential verringernden Material enthaltenden Behälter |
CN110706989A (zh) * | 2019-10-30 | 2020-01-17 | 南京工程学院 | 提高GaAs光电阴极稳定性的Cs/NF3激活方法 |
CN112908806A (zh) * | 2021-01-16 | 2021-06-04 | 南京理工大学 | 一种电子源封装 |
CN112908806B (zh) * | 2021-01-16 | 2022-09-20 | 南京理工大学 | 一种电子源封装 |
Also Published As
Publication number | Publication date |
---|---|
BE729828A (de) | 1969-09-15 |
DE1639363B2 (de) | 1976-03-11 |
DE1639363A1 (de) | 1970-03-26 |
NL6903628A (de) | 1969-09-17 |
FR2004044A1 (de) | 1969-11-14 |
GB1207091A (en) | 1970-09-30 |
CH489114A (de) | 1970-04-15 |
ES364745A1 (es) | 1970-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3814968A (en) | Solid state radiation sensitive field electron emitter and methods of fabrication thereof | |
Martinelli et al. | The application of semiconductors with negative electron affinity surfaces to electron emission devices | |
US3894332A (en) | Solid state radiation sensitive field electron emitter and methods of fabrication thereof | |
US3672992A (en) | Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response | |
US3630587A (en) | Activating method for cesium activated iii-v compound photocathode using rare gas bombardment | |
US3159442A (en) | Production of thin films | |
US3868523A (en) | Semitransparent photocathode | |
Wargo et al. | Electron-bombardment-induced dissociation of alkaline earth oxides | |
US3632442A (en) | Photocathodes | |
US3535598A (en) | Solid state tunnel cathode emitter having an improved thin film insulating barrier | |
US4161418A (en) | Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers | |
Garbe | Factors affecting the photoemission from caesium oxide covered GaAs | |
US3904502A (en) | Method of fabricating a color display screen employing a plurality of layers of phosphors | |
US3858955A (en) | Method of making a iii-v compound electron-emissive cathode | |
US2700626A (en) | Secondary electron emissive electrodes | |
US3712700A (en) | Method of making an electron emitter device | |
US4005465A (en) | Tunnel emitter photocathode | |
US3806372A (en) | Method for making a negative effective-electron-affinity silicon electron emitter | |
US3900865A (en) | Group III-V compound photoemitters having a high quantum efficiency and long wavelength response | |
US2242644A (en) | Luminescent screen | |
US3669735A (en) | Method for activating a semiconductor electron emitter | |
US3202854A (en) | Pickup tube target having an additive therein for reduced resistivity | |
US3830717A (en) | Semiconductor camera tube target | |
US3350591A (en) | Indium doped pickup tube target | |
US3913218A (en) | Tunnel emitter photocathode |