US3616452A - Production of deposits by cathode sputtering - Google Patents

Production of deposits by cathode sputtering Download PDF

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Publication number
US3616452A
US3616452A US739029A US3616452DA US3616452A US 3616452 A US3616452 A US 3616452A US 739029 A US739029 A US 739029A US 3616452D A US3616452D A US 3616452DA US 3616452 A US3616452 A US 3616452A
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United States
Prior art keywords
anode
target
filament
diaphragm
tube
Prior art date
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Expired - Lifetime
Application number
US739029A
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English (en)
Inventor
Jean Jacques Bessot
Jean Claude Burlurut
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Alsacienne de Constructions Atomiques de Telecommunications et dElectronique ALCATEL
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Alsacienne de Constructions Atomiques de Telecommunications et dElectronique ALCATEL
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Definitions

  • the invention eliminates the drawbacks of the prior methods for cathode-sputtering deposition by providing basically the use of a substantially neutral plasma adapted to be carried in the form of a stable parallel beam to a substantial distance from the source without resorting to intricate electrode arrangements.
  • the invention relates to improvements to the method whereby a deposit in thin-layer form can be obtained by cathode sputtering.
  • the invention also relates to the devices for carrying such improvements into effect.
  • a further prior art proposal was to place a tubular anode in front of a filament heated to a high temperature and to establish within the tubular anode a magnetic field parallel to the axis of said tubular anode, the electrons and ions formed being then caused to follow helical paths around the electrode axis, while a still further increase in the degree of gas ionization was provided by locating near the tubular electrode a second electrode of annular shape, also called extraction electrode, at a negative potential with respect to the tubular electrode. This extraction electrode acts to repell the electrons towards the tubular electrode and to direct the ions towards the target to be bombarded.
  • the result is an excellent electron concentration in the interior of the tubular electrode and a high-density electron flow at the outlet of the second electrode.
  • the resulting ion flux tends to be divergent and further electrodes must be so arranged as to render it parallel or convergent. Consequently, the devices for carrying such a method into effect become intricate, all the more as the voltages and relative positions of the electrodes are to be carefully controlled.
  • the purpose of the invention is to eliminate the drawbacks of the prior methods for cathode-sputtering deposition, mainly by providing the use of a substantially neutral plasma which can be carried in the form of a stable parallel beam to a rather great distance from the source without resorting to intricate electrode arrangements.
  • the method for producing a thin-layer deposit onto an object by cathode sputtering consists basically in establishing in vacuo at some distance from said target a substantially neutral plasma in pencil form by ionizing an inert gas by means of a diaphragm-delineated beam of electrons issuing from a heated filament and by subjecting said electrons to the concurrent action of an electric field which is created by a tubular anode located adjacent said diaphragm, and of a magnetic field which extends parallel to said anode axis, and in so arranging said target, which is at a negative potential, that said plasma pencil will lie level with the surface thereof, said object to be coated standing in close vicinity and opposite to said surface.
  • an advantageous feature of the method of the invention is that the substantially neutral plasma can be formed. within one compartment of the vacuum chamber and the target be arranged in another compartment, which may be under higher vacuum.
  • the compartments where the plasma is formed is connected to the target-containing compartment through an aperture of a low size sufficient to allow free passage of the plasma beam.
  • the invention affords operational facilities which are an advance over the prior art
  • the rate of deposition can reach a few tens of microns per hour, while the prior methods allowed but for deposition rates of some 23 u/hour.
  • the material used for sputtering may be silver, nickel, titanium, tantalium or other materials useful for thin-layer deposition.
  • the objects to be coated may be any articles especially insulating parts for the production of thin-layer circuits.
  • the inert gas used to form the plasma is advantageously argon.
  • FIG. 1 shows the first device
  • FIG. 2 shows the second device, which is to be preferred in practice.
  • FIG. 1 there is shown at l a vacuum vessel and reference 2 designates a filament which is brought by resistance heating through wires 20, 2b to a temperature of 2,000-2,800 C.
  • F ilament 2 is arranged within a bent tube 3, cooled by water circulated through 4 and provided in its upper portion with a diaphragm having a central hole 5.
  • An anode6, fed through 6a consists of a copper tube open at both ends which, as illustrated, has a diameter of 90 mm. and a height of l5 0 mm.
  • a coil 7 coaxial with the anode tube 6 creates in said tube a magnetic field of 200-500 gauss.
  • a target 8 made of the material to be sputtered, is suspended by means over the anode tube 6, lying parallel and relatively close to the anode tube axis. Oil circulated through 9 acts to cool the targetwhen the targetforming material cannot withstand the temperatures which may be attained by said target.
  • the plate 10 to be coated is disposed on a support I] of stainless'steel which is directly connected to earth at Ma.
  • An inlet valve 12 serves to admit an inert gas such as argon, which flows into vessel 1 through duct 120.
  • a vacuum unit, not shown, is connected to the vacuum vessel through a tube 13.
  • the anode current is of the order of 9 a.
  • the ion current is of the order of 300-500 ma. across a target of 25 cm. area, Le. a current density of l2-20 ma./cm.
  • the ion flow is attracted by the target, which is at a negative potential of 800 volts.
  • the voltage used on the target is caused to be alternatively positive and negative at a frequency from 13 to 20 Ml-lz., so that the target under sputtering by the ion bombardment be neutralized by the electron bombardment.
  • the target is arranged close and parallel to said axis so as to be at the highest ion density location.
  • the part to be coated or workpiece is spaced from the target by less then cm., so that the average free travel of the gas molecules is higher than said spacing and that the sputtered particles are not driven outside the space between the target and the workpiece.
  • the rate of deposition can be five to times higher than that obtained with the usual arrangements.
  • FIG. 2 shows an embodiment of the same device affording better handling facilities.
  • the vacuum vessel is formed of two compartments l4, 15 which can be connected through a coupling 16.
  • a magnetic coil 20 or a tubular magnet is coaxial with the anode tube 19.
  • a valve 21 serves to admit an inert gas or any other gas through duct 21a.
  • Compartment 15 is closed at its upper portion by a removable cover 15a.
  • Within compartment 15 are a target 23 fed at 23a and cooled by oil or air circulated through 24 and a support 25 for the object 26 to be coated.
  • a vacuum unit not shown is connected to compartment 15 by a tube 27.
  • Compartment 14 has a length substantially equal to the length of the plasma flow travel. Compartment 15a is of sufficient capacity to accommodate objects of relatively great extent lying on support 25.
  • the coil creating the longitudinal magnetic field can be placed closer to the tubular electrode axis and, on the other hand, higher vacuum may be obtained in the sputtering chamber than in the portion where the plasma is formed.
  • higher vacuum may be obtained in the sputtering chamber than in the portion where the plasma is formed.
  • Sputtering apparatus for depositing thin layers on substrates by ion-bombarding a target and sputtering material from the target to a substrate comprising: a vacuum chamber, evacuating means connected to the chamber for reducing pressure therein, an electron beam source mounted in the chamber comprising a filament, a diaphragm substantially covering the filament and having a central opening through which an electron beam projects, an elongated hollow cylindrical anode on an opposite side of the diaphragm from the filament and encircling the electron beam and extending substantially along an axis of the electron beam as it emerges through the diaphragm opening, ion beam generating means including said cylindrical anode and an electromagnetic coil surrounding said cylindrical anode, and gas injection means connected to the vessel and positioned therein for flowing gas into the cylindrical anode, first power supply means connected to the cylindrical anode for positively biasing the cylindrical anode and second power supply means connected to the coil for energizing the coil, whereby the cylindrical anode pulls electrons
  • filament comprises a helical wire having an axis and wherein axes of the filament, diaphragm opening, cylindrical anode and electromagnetic coil are concurrent.
  • the vacuum vessel comprises a main chamber and a tube opening into the main chamber and extending outward from an open connection therewith, wherein the filament, diaphragm and cylindrical anode are positioned within the tube and wherein the diaphragm opening, cylindrical anode have axes concurrent with a center of the open connection.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
US739029A 1967-06-22 1968-06-21 Production of deposits by cathode sputtering Expired - Lifetime US3616452A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR111571A FR1534917A (fr) 1967-06-22 1967-06-22 Perfectionnements à l'obtention de dépôts par pulvérisation cathodique

Publications (1)

Publication Number Publication Date
US3616452A true US3616452A (en) 1971-10-26

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US739029A Expired - Lifetime US3616452A (en) 1967-06-22 1968-06-21 Production of deposits by cathode sputtering

Country Status (4)

Country Link
US (1) US3616452A (zh)
CH (1) CH473908A (zh)
FR (1) FR1534917A (zh)
GB (1) GB1233404A (zh)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839182A (en) * 1971-10-06 1974-10-01 Balzers Patent Beteilig Ag Triode device for sputtering material by means of a low voltage discharge
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
US4175029A (en) * 1978-03-16 1979-11-20 Dmitriev Jury A Apparatus for ion plasma coating of articles
US4440108A (en) * 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
US5082545A (en) * 1988-12-15 1992-01-21 Matsushita Electric Industrial Co., Ltd. Sputtering apparatus
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6045666A (en) * 1995-08-07 2000-04-04 Applied Materials, Inc. Aluminum hole filling method using ionized metal adhesion layer
US6348764B1 (en) * 2000-08-17 2002-02-19 Taiwan Semiconductor Manufacturing Company, Ltd Indirect hot cathode (IHC) ion source
US20050020080A1 (en) * 1997-11-26 2005-01-27 Tony Chiang Method of depositing a diffusion barrier layer and a metal conductive layer
US20050208767A1 (en) * 1997-11-26 2005-09-22 Applied Materials, Inc. Method of depositing a tantalum nitride / tantalum diffusion barrier layer system
US20060049044A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Substrate holder for a vapour deposition system
US20060049041A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
US20060049042A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Cathode for sputter coating
US20060081468A1 (en) * 2004-10-19 2006-04-20 Jds Uniphase Corporation Magnetic latch for a vapour deposition system
US20070017804A1 (en) * 2005-07-22 2007-01-25 Sandvik Intellectual Property Ab Device for improving plasma activity PVD-reactors
US20080006529A1 (en) * 2004-08-20 2008-01-10 Jds Uniphase Corporation Substrate Holder Assembly Device
US20090250341A1 (en) * 2004-08-20 2009-10-08 Ockenfuss Georg J Anode for sputter coating

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2599587C1 (ru) * 2015-05-27 2016-10-10 Российская Федерация от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Устройство для нанесения диффузионных покрытий

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839182A (en) * 1971-10-06 1974-10-01 Balzers Patent Beteilig Ag Triode device for sputtering material by means of a low voltage discharge
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
US4175029A (en) * 1978-03-16 1979-11-20 Dmitriev Jury A Apparatus for ion plasma coating of articles
US4440108A (en) * 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
US5082545A (en) * 1988-12-15 1992-01-21 Matsushita Electric Industrial Co., Ltd. Sputtering apparatus
US6313027B1 (en) 1995-08-07 2001-11-06 Applied Materials, Inc. Method for low thermal budget metal filling and planarization of contacts vias and trenches
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6136095A (en) * 1995-08-07 2000-10-24 Applied Materials, Inc. Apparatus for filling apertures in a film layer on a semiconductor substrate
US6217721B1 (en) 1995-08-07 2001-04-17 Applied Materials, Inc. Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer
US6238533B1 (en) 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US6045666A (en) * 1995-08-07 2000-04-04 Applied Materials, Inc. Aluminum hole filling method using ionized metal adhesion layer
US20070020922A1 (en) * 1997-11-26 2007-01-25 Tony Chiang Method of depositing a metal seed layer on semiconductor substrates
US20050020080A1 (en) * 1997-11-26 2005-01-27 Tony Chiang Method of depositing a diffusion barrier layer and a metal conductive layer
US20050085068A1 (en) * 1997-11-26 2005-04-21 Tony Chiang Method of depositing a metal seed layer on semiconductor substrates
US20050208767A1 (en) * 1997-11-26 2005-09-22 Applied Materials, Inc. Method of depositing a tantalum nitride / tantalum diffusion barrier layer system
US9390970B2 (en) 1997-11-26 2016-07-12 Applied Materials, Inc. Method for depositing a diffusion barrier layer and a metal conductive layer
US7687909B2 (en) 1997-11-26 2010-03-30 Applied Materials, Inc. Metal / metal nitride barrier layer for semiconductor device applications
US7381639B2 (en) 1997-11-26 2008-06-03 Applied Materials, Inc. Method of depositing a metal seed layer on semiconductor substrates
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US7074714B2 (en) 1997-11-26 2006-07-11 Applied Materials, Inc. Method of depositing a metal seed layer on semiconductor substrates
US20070178682A1 (en) * 1997-11-26 2007-08-02 Tony Chiang Damage-free sculptured coating deposition
US6348764B1 (en) * 2000-08-17 2002-02-19 Taiwan Semiconductor Manufacturing Company, Ltd Indirect hot cathode (IHC) ion source
US20060070877A1 (en) * 2004-08-20 2006-04-06 Jds Uniphase Corporation, State Of Incorporation: Delaware Magnetron sputtering device
US7879209B2 (en) 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
EP1628323B1 (en) * 2004-08-20 2017-03-29 Viavi Solutions Inc. Anode for sputter coating
US20080006529A1 (en) * 2004-08-20 2008-01-10 Jds Uniphase Corporation Substrate Holder Assembly Device
US20060049042A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Cathode for sputter coating
US20090250341A1 (en) * 2004-08-20 2009-10-08 Ockenfuss Georg J Anode for sputter coating
US20060049041A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
US20060049044A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Substrate holder for a vapour deposition system
US7790004B2 (en) 2004-08-20 2010-09-07 Jds Uniphase Corporation Substrate holder for a vapour deposition system
US8500973B2 (en) 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7954219B2 (en) 2004-08-20 2011-06-07 Jds Uniphase Corporation Substrate holder assembly device
CN1737188B (zh) * 2004-08-20 2011-12-14 Jds尤尼弗思公司 用于溅镀镀膜的阳极
US8163144B2 (en) 2004-08-20 2012-04-24 Tilsch Markus K Magnetron sputtering device
CN1737190B (zh) * 2004-08-20 2012-05-23 Jds尤尼弗思公司 磁控溅镀装置
US7785456B2 (en) 2004-10-19 2010-08-31 Jds Uniphase Corporation Magnetic latch for a vapour deposition system
US20060081468A1 (en) * 2004-10-19 2006-04-20 Jds Uniphase Corporation Magnetic latch for a vapour deposition system
US20070017804A1 (en) * 2005-07-22 2007-01-25 Sandvik Intellectual Property Ab Device for improving plasma activity PVD-reactors

Also Published As

Publication number Publication date
DE1765625A1 (de) 1972-04-13
DE1765625B2 (de) 1976-01-29
FR1534917A (fr) 1968-08-02
GB1233404A (zh) 1971-05-26
CH473908A (fr) 1969-06-15

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