US3554889A - Color cathode ray tube screens - Google Patents
Color cathode ray tube screens Download PDFInfo
- Publication number
- US3554889A US3554889A US778167A US3554889DA US3554889A US 3554889 A US3554889 A US 3554889A US 778167 A US778167 A US 778167A US 3554889D A US3554889D A US 3554889DA US 3554889 A US3554889 A US 3554889A
- Authority
- US
- United States
- Prior art keywords
- phosphor
- layer
- coating
- thickness
- screen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 75
- 238000000151 deposition Methods 0.000 abstract description 21
- 230000008021 deposition Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 84
- 238000000576 coating method Methods 0.000 description 63
- 239000011248 coating agent Substances 0.000 description 60
- 238000000034 method Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 21
- 229910003437 indium oxide Inorganic materials 0.000 description 15
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 15
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 14
- 229910001887 tin oxide Inorganic materials 0.000 description 14
- 239000000725 suspension Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- 239000002365 multiple layer Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- VGBPIHVLVSGJGR-UHFFFAOYSA-N thorium(4+);tetranitrate Chemical compound [Th+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VGBPIHVLVSGJGR-UHFFFAOYSA-N 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 238000001962 electrophoresis Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000010420 art technique Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- -1 zinc sulfide silver activated phosphor Chemical class 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004160 Ammonium persulphate Substances 0.000 description 1
- 241000070928 Calligonum comosum Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- 235000019395 ammonium persulphate Nutrition 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- VFXKJLJXBCWMLG-UHFFFAOYSA-N silver;zinc;sulfide Chemical compound [S-2].[Zn+2].[Ag+] VFXKJLJXBCWMLG-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/22—Servicing or operating apparatus or multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/22—Applying luminescent coatings
- H01J9/221—Applying luminescent coatings in continuous layers
- H01J9/225—Applying luminescent coatings in continuous layers by electrostatic or electrophoretic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/913—Material designed to be responsive to temperature, light, moisture
Definitions
- This invention relates generally to the production of luminescent screens which are useful, for example, in producing cathode ray tubes (CRT) for the production of color images. More'specifically, the invention relates to improved methods for producing multiple phosphor layers on CRT screens.
- color CRT displays may be most effectively produced by the use of multiple phosphor layers on a substrate or screen.
- the multiple layer color screen approach has several important advantages over the previous stripe phosphor screen or shadow mask or dot screens. For example, multiple layer color screens have better resolution, contrast and brightness, and enable the use of single electron gun systems.
- a thin transparent conductive coating of a material such as tin oxide is applied to a transparent glass screen that has been previously cleaned.
- the tin oxide is preferably applied by chemical deposition onto a heated screen from a solution of tin chloride and antimony-trichloride in a methanol base, and in a water vapor atmosphere.
- This conductive coating provides an electrode for cataphoretic deposition.
- a first phosphor layer, having a thickness of approximately four microns is cataphoretically deposited over the thin transparent conductive coating, with the thickness of the first phosphor layer beingcontrolled to within one micron.
- This second thin transparent conductive coating provides the electrode for an other cataphoretically deposited layer of phosphor, having a thickness of approximately two microns, and permits the thickness of the phosphor deposit to be controlled to within one-half micron. Subsequently, an additional thin transparent coating or coatings and cataphoretically deposited layer or layers of phosphor may be applied if desired.
- the above invention is extremely useful in producing high quality multiple layer phosphor CRT- screens, which are especially useful, for example, in high density graphic display applications. Further, the preferred method enables the production of such screens in large sizes, and the method is relatively simple and inexpensive to practice.
- FIG. 1' shows the steps comprising the preferred method of the present invention
- FIG. 2 is an enlarged partial cross section through a CRT screen produced in accordance with the method illustrated in FIG. 1;
- FIG. 3 is a chart showing the variables that may be controlled to employ the method of this invention.
- FIG. 1 The preferred embodiment of the present invention is shown in FIG. 1.
- a transparent glass base or substrate 10 (FIG. 2) is initially provided with a so-called electronically clean surface.
- a standard CRT soft-lead glass faceplate was used.
- the screen surface is initially washed with detergent and soaked in chromic acid, flushed with water, soaked in ammonium bifiuoride, and rinsed with pure water. The screen is then dried in a clean atmosphere.
- the method of applying multiple layers of phosphors on the electronically clean glass substrate 10 initially involves coating the screen with a thin transparent conductive coating which, in the preferred embodiment, is tin oxide.
- the thin transparent conductive coating 12 (FIG. 2) is applied to the screen in the following manner. Initially, a solution of tin chloride and methanol, mixed with 5 percent antimony-trichloride (by weight) is prepared. The solution is chemicall deposited on the substrate by heating the substrate, in any convenient way, to approximately 425 C., and spraying the solution thereon in the presence of a water-vapor atmosphere. A chemical deposition of tin oxide is achieved by the chemical interaction of the vapors as explained, for example, in U.S. Pat. No. 2,732,313.
- the resulting transparent conductive coating 12 comprises tin oxide, which is doped with antimony.
- the antimony doping serves the purpose of shifting the light transmissivity of the coating from near-infrared to the visible spectrum, and of enhancing the conductivity of the coating.
- the preferred thickness of coating 12 is approximately 5,000 A., and this thickness is controlled by measuring the resistance during the chemical deposition, in a manner well known to those skilled in the art.
- the tin oxide coating 12 has a surface resistance of approximately 30 to 40 ohms per square, and an optical transmissivity of approximately eighty percent.
- a zinc cadmium sulfide (silver-activated) phosphor layer (commonly known as P-20) having a thickness of fourione micron is applied by cataphoretic deposition.
- the following suspension is prepared. Elutriated fine particles of the preferred phosphor, approximately one to two microns in diameter are suspended in ethyl alcohol containing five percent water (by weight) and 10- moles per liter of thorium nitrate. Preferably, 3.5 mg. of phosphor per ml. of vehicle is used. The suspension is formed by addition of these ingredients, and agitation for approximately 30 minutes by milling, stirring, or vibration. It is important that the dielectric constant of the vehicle be approximately 30 since this will insure a relatively high mobility of the charged phosphor particles through the vehicle and will permit a low field strength to promote cataphoretic movement of the particles.
- a phosphor layer 14, having a green color when activated, is cataphoretically deposited on the screen over the conductive coating 14 by initially placing the above-described suspension in a suitable container (not illustrated) having an electrode placed therein.
- the coated substrate 10 is connected to the negative terminal of a DC. power supply and a platinum electrode is connected to the positive terminal of that supply in order to practice cataphoresis.
- the platinum electrode is preferably located two centimeters from the tin oxide coating 12, and a field of approximately fifty volts per centimeter is applied across the electrodes.
- the thickness of the phosphor layer 14 is extremely important to the successful production of a multi-phosphor layer CRT screen. Accordingly, reference should be made to FIG. 3 wherein a curve is presented that illustrates the relationship of the three parameters that effect the control of the thickness of phosphor layer 14 by cataphoretic deposition; i.e., time, field strength and concentration of deposition suspension. It will be observed that for the suspension 4 noted above, and at a field strength of fifty volts per centimeter, it takes approximately 1.5 minutes to deposit a four micron thick phosphor layer 14 on the coated substrate. For reasons to be explained hereinafter, that the thickness of phosphor layer 14 is preferably between three and five microns.
- a second transparent conductive coating 16 having a thickness ranging from 400 A. to 500 A. is applied.
- the coating 16 is indium oxide, and is applied by vacuum deposition.
- the substrate 10 carrying coating 12 and layer 14 thereon is located in a vacuum chamber and heated to approximately 350 C.
- Located in the chamber is an indium filament. In order to provide the necessary water vapor and oxygen for the formation of indium oxide, oxygen and water vapor is gradually bled into the chamber, and simultaneously the indium is evaporated from the filament.
- the various vapors react in a manner well known to those skilled in the art to form an indium oxide coating or film 16 over the first phosphor layer 14.
- the process is controlled to deposit a coating or film 16 on the order of 400 A. to 500 A. in thickness, for a reason to be related hereinafter.
- a second phosphor layer 18 can now be deposited onto the substrate 10 over transparent conductive coating 16 at a thickness that may be very carefully controlled by using the coating 16 as an electrode for cataphoretic deposition.
- a zinc sulfide silver activated layer 18 (a blue phosphor, commonly known as P-ll is deposited by cataphoresis as follows.
- the screen 10, carrying the tin oxide coating 12, green phosphor layer 14 and indium oxide coating 16 is again placed in a container along with a zinc sulfide silver activated phosphor suspension that is prepared in the same manner and has the same concentration as explained above.
- the phosphor layer 18 is cataphoretically deposited over the second thin conductive coating 16 using an electrode spacing of approximately two centimeters and a field strength of approximately 50 volts per centimeter.
- the thickness of the blue phosphor layer 18 is carefully controlled to be Within the range of one and one-half to two and one-half (or twoione-half) microns.
- another indium oxide coating 20 is applied over the blue phosphor layer 18 in the same manner as described above in regard to the application of indium oxide coating 16.
- This coating 20 is also preferably 400 A. to 500 A. in thickness, and provides an electrode for cataphoretic deposition.
- a third phosphor layer 22 of yttrium vanadate europiurn activated (or rare earth red phosphor) is cataphoretically deposited in the same manner as the phosphor layers 14 and 18.
- the thickness of this third phosphor layer '22 is carefully controlled to within the range of one and one-half to two and one-half (or twoione-half) microns.
- an ion-burn resistant layer of aluminium may be applied over the third phosphor layer 22, to form a multi-layer color CRT screen 30.
- the overall thickness of the three phosphor layers applied by cataphoretic deposition in accordance with the present invention is six to ten microns. This thickness is very important since electron penetration is proportional to the square of the applied voltage, and to permit the application of voltage in a useful range (i.e., eighteen kv. or less) the total thickness of the phosphor layers 14, 18 and 22 must be held to ten microns or less. Eighteen kv. is considered the maximum useful voltage in CRT graphic applications due to safety considerations since operators are present, and due also to increased tube life and ease of beam deflection. It was found that the only satisfactory the screen.
- This screen is extremely'u seful in the display of highdensity numerics or graphics 'sincethe' phosphor layers, besides being held to precisegthickness tolerance by virtue of the intervening conductive layers acting-as electrodes for cataphoretic-deposition, are characterized by fine uniform particle size, which leads. to high resolution, good contrast and generally good image quality. Furthermore,- it is anticipated that a screen 30 produced in this'i'nanner willexperience infrequent electronic breakdowns dueto the relativelylow voltage that is required to effectively excite the interveningphosphor. layers. Also,
- the first thin conductive coating 12 may alternatively be indium oxide, sprayed upon the screen as described above.
- the solution in such case would consist of indium chloride, methanol and antimony-trichloride.
- the surface resistance of an indium oxide coating is approximately 150 to 200 ohms per square, and it would therefore not be as conductive as the tin oxide coating 12.
- Certain other alternatives to the formation or application of the first conductive coating 12 include using titanium chloride to form a titanium oxide layer that is thereafter rendered conductive by reduction with zinc sulfide in accordance with the method suggested in US. Pat. No. 2,928,975. Still other alternatives to the formation of coating 12 that may occur to those skilled in the art include the vacuum evaporation of indium metal at partial pressure to form a transparent conductive coating of indium oxide; the vacuum evaporation of silver or aluminium metals and the subsequent glow discharge thereof in air. to render it transparent; and, the vacuum evaporation of aluminium onto the substrate 10 to a thickness of approxiamtely 1,000 A.
- the aluminiurn would not be transparent initially, and after the first phosphor layer 14 is cataphoretically deposited, the aluminium must be rendered transparent by oxidation in air or in aqueous ammonium persulphate, or anodization by citric acid.
- the premature oxidation or anodization of the aluminium, i.e., before deposition of layer 14 would render it non-conducting, and useless for the cataphoretic depositon of layer 14.
- methol-isobutyl ketone may be used as the vehicle rather than ethyl alcohol.
- nitric or acetic acid rather than provide 10" moles per liter of thorium nitrate, which incidentally provides an ionizable metal in suspension, it would be possible to utilize nitric or acetic acid to provide an ionizable salt.
- the thorium nitrate gives better adhesion than those acids, possibly due to a hydroxide occlusion at the interface between the conductive coating and phosphor layer, and therefore thorium nitrate is preferred.
- a method of producing a cathode ray tube screen having multiple layers of phosphor excitable by a single electron gun comprising;
- step of applying to a glass substrate a thin transparent conductive coating includes depositing on the glass substrate a coating selected from the group consisting of tin oxide, inldium oxide, conductive titanium oxide, and transparent s1 ver.
- a method of producing a cathode ray tube screen having three discrete phosphor layers comprising:
- a second phosphor layer having a thickness ranging from one and one-half to two and one-half microns;
- a third phosphor layer having a thickness ranging one and one-half to two and onehalf microns.
- a transparent color image screen comprising:
- a first cataphoretically deposited phosphor layer having a preselected color when excited and having a thickness ranging from three to five microns, the first cataphoretically deposited phosphor layer being adjacent the first conductive layer;
- a second cataphoretically deposited phosphor layer having another preselected color when excited and having a thickness ranging from one and one-half to two and one-half microns, the second cataphoretically deposited phosphor layer being adjacent the second conductive transparent layer.
- the transparent color image screen of claim 7 ineluding a third transparent conductive layer adjacent the second cataphoretically deposited phoisphor layer;
- a third cataphoretically deposited phosphor layer adjacent the third conductive transparent layer said third cataphoretically deposited phosphor layer having a thickness ranging from one and one-half to two and one-half microns.
- the first conductive transparent layer is approximately 5,000 A. in thickness
- the second conductive transparent layer ranges from 400 A. to 500 A. in thickness
- the third conductive transparent layer ranges from 400 A. to 500 A. in thickness.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77816768A | 1968-11-22 | 1968-11-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3554889A true US3554889A (en) | 1971-01-12 |
Family
ID=25112501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US778167A Expired - Lifetime US3554889A (en) | 1968-11-22 | 1968-11-22 | Color cathode ray tube screens |
Country Status (4)
Country | Link |
---|---|
US (1) | US3554889A (enrdf_load_stackoverflow) |
JP (1) | JPS4812667B1 (enrdf_load_stackoverflow) |
FR (1) | FR2023844A1 (enrdf_load_stackoverflow) |
GB (1) | GB1252787A (enrdf_load_stackoverflow) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663396A (en) * | 1970-02-02 | 1972-05-16 | Xerox Corp | Kinescope photoelectrophoretic imaging method and systems |
US3714011A (en) * | 1970-07-17 | 1973-01-30 | Columbia Broadcasting Sys Inc | Method of electrophoretic deposition of cathodoluminescent materials |
JPS49121473A (enrdf_load_stackoverflow) * | 1973-03-05 | 1974-11-20 | ||
US3863086A (en) * | 1972-11-30 | 1975-01-28 | Gte Sylvania Inc | Coated pattern mask for use in forming a color CRT screen structure and method for coating the mask |
WO1989011158A1 (en) * | 1988-05-03 | 1989-11-16 | Zenith Electronics Corporation | Cataphoretic process for screening color ray tubes |
US4891110A (en) * | 1986-11-10 | 1990-01-02 | Zenith Electronics Corporation | Cataphoretic process for screening color cathode ray tubes |
US5600200A (en) * | 1992-03-16 | 1997-02-04 | Microelectronics And Computer Technology Corporation | Wire-mesh cathode |
US5601966A (en) * | 1993-11-04 | 1997-02-11 | Microelectronics And Computer Technology Corporation | Methods for fabricating flat panel display systems and components |
US5612712A (en) * | 1992-03-16 | 1997-03-18 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5667655A (en) * | 1996-04-15 | 1997-09-16 | Zenith Electronics Corporation | Method of making color screens for FED and other cathodoluminscent displays |
US5675216A (en) * | 1992-03-16 | 1997-10-07 | Microelectronics And Computer Technololgy Corp. | Amorphic diamond film flat field emission cathode |
US5679043A (en) * | 1992-03-16 | 1997-10-21 | Microelectronics And Computer Technology Corporation | Method of making a field emitter |
US5697824A (en) * | 1994-09-13 | 1997-12-16 | Microelectronics And Computer Technology Corp. | Method for producing thin uniform powder phosphor for display screens |
US5763997A (en) * | 1992-03-16 | 1998-06-09 | Si Diamond Technology, Inc. | Field emission display device |
US5853554A (en) * | 1995-02-01 | 1998-12-29 | Si Diamond Technology, Inc. | Composition and method for preparing phosphor films exhibiting decreased coulombic aging |
US5861707A (en) * | 1991-11-07 | 1999-01-19 | Si Diamond Technology, Inc. | Field emitter with wide band gap emission areas and method of using |
US6127773A (en) * | 1992-03-16 | 2000-10-03 | Si Diamond Technology, Inc. | Amorphic diamond film flat field emission cathode |
US6629869B1 (en) | 1992-03-16 | 2003-10-07 | Si Diamond Technology, Inc. | Method of making flat panel displays having diamond thin film cathode |
-
1968
- 1968-11-22 US US778167A patent/US3554889A/en not_active Expired - Lifetime
-
1969
- 1969-10-15 FR FR6935801A patent/FR2023844A1/fr not_active Withdrawn
- 1969-10-22 GB GB1252787D patent/GB1252787A/en not_active Expired
- 1969-11-13 JP JP44090499A patent/JPS4812667B1/ja active Pending
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663396A (en) * | 1970-02-02 | 1972-05-16 | Xerox Corp | Kinescope photoelectrophoretic imaging method and systems |
US3714011A (en) * | 1970-07-17 | 1973-01-30 | Columbia Broadcasting Sys Inc | Method of electrophoretic deposition of cathodoluminescent materials |
US3863086A (en) * | 1972-11-30 | 1975-01-28 | Gte Sylvania Inc | Coated pattern mask for use in forming a color CRT screen structure and method for coating the mask |
JPS49121473A (enrdf_load_stackoverflow) * | 1973-03-05 | 1974-11-20 | ||
US3904502A (en) * | 1973-03-05 | 1975-09-09 | Westinghouse Electric Corp | Method of fabricating a color display screen employing a plurality of layers of phosphors |
US4891110A (en) * | 1986-11-10 | 1990-01-02 | Zenith Electronics Corporation | Cataphoretic process for screening color cathode ray tubes |
WO1989011158A1 (en) * | 1988-05-03 | 1989-11-16 | Zenith Electronics Corporation | Cataphoretic process for screening color ray tubes |
US5861707A (en) * | 1991-11-07 | 1999-01-19 | Si Diamond Technology, Inc. | Field emitter with wide band gap emission areas and method of using |
US5763997A (en) * | 1992-03-16 | 1998-06-09 | Si Diamond Technology, Inc. | Field emission display device |
US5703435A (en) * | 1992-03-16 | 1997-12-30 | Microelectronics & Computer Technology Corp. | Diamond film flat field emission cathode |
US6629869B1 (en) | 1992-03-16 | 2003-10-07 | Si Diamond Technology, Inc. | Method of making flat panel displays having diamond thin film cathode |
US6127773A (en) * | 1992-03-16 | 2000-10-03 | Si Diamond Technology, Inc. | Amorphic diamond film flat field emission cathode |
US5600200A (en) * | 1992-03-16 | 1997-02-04 | Microelectronics And Computer Technology Corporation | Wire-mesh cathode |
US5675216A (en) * | 1992-03-16 | 1997-10-07 | Microelectronics And Computer Technololgy Corp. | Amorphic diamond film flat field emission cathode |
US5679043A (en) * | 1992-03-16 | 1997-10-21 | Microelectronics And Computer Technology Corporation | Method of making a field emitter |
US5686791A (en) * | 1992-03-16 | 1997-11-11 | Microelectronics And Computer Technology Corp. | Amorphic diamond film flat field emission cathode |
US5612712A (en) * | 1992-03-16 | 1997-03-18 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5601966A (en) * | 1993-11-04 | 1997-02-11 | Microelectronics And Computer Technology Corporation | Methods for fabricating flat panel display systems and components |
US5652083A (en) * | 1993-11-04 | 1997-07-29 | Microelectronics And Computer Technology Corporation | Methods for fabricating flat panel display systems and components |
US5614353A (en) * | 1993-11-04 | 1997-03-25 | Si Diamond Technology, Inc. | Methods for fabricating flat panel display systems and components |
US5697824A (en) * | 1994-09-13 | 1997-12-16 | Microelectronics And Computer Technology Corp. | Method for producing thin uniform powder phosphor for display screens |
US5853554A (en) * | 1995-02-01 | 1998-12-29 | Si Diamond Technology, Inc. | Composition and method for preparing phosphor films exhibiting decreased coulombic aging |
US5906721A (en) * | 1995-02-01 | 1999-05-25 | Si Diamond Technology, Inc. | Composition and method for preparing phosphor films exhibiting decreased coulombic aging |
US5667655A (en) * | 1996-04-15 | 1997-09-16 | Zenith Electronics Corporation | Method of making color screens for FED and other cathodoluminscent displays |
Also Published As
Publication number | Publication date |
---|---|
DE1958486B2 (de) | 1972-06-22 |
JPS4812667B1 (enrdf_load_stackoverflow) | 1973-04-21 |
FR2023844A1 (enrdf_load_stackoverflow) | 1970-08-21 |
DE1958486A1 (de) | 1970-06-11 |
GB1252787A (enrdf_load_stackoverflow) | 1971-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3554889A (en) | Color cathode ray tube screens | |
KR100265859B1 (ko) | 전계방출 디스플레이용 발광입자 | |
US4482447A (en) | Nonaqueous suspension for electrophoretic deposition of powders | |
US3525679A (en) | Method of electrodepositing luminescent material on insulating substrate | |
KR20090037385A (ko) | 형광체의 표면 처리 방법 및 평면 표시 장치의 제조 방법 | |
JP2746186B2 (ja) | 蛍光体 | |
US5536383A (en) | Suspension for the deposition of luminescent materials by electrophoresis particularly for producing flat screens | |
US3522463A (en) | Electron tube multicolor dual persistence screen comprising phosphorcoated phosphor particles | |
US3963954A (en) | Fluorescent lamp having indium oxide conductive coating and a protective coating therefor | |
US5635048A (en) | Method for forming low-energy electron excited fluorescent screen | |
US3904502A (en) | Method of fabricating a color display screen employing a plurality of layers of phosphors | |
McGee et al. | High Quality Phosphor Screens for Cascade Image Intensifies | |
JPH07211460A (ja) | 電界発光素子の製造方法 | |
JP4568952B2 (ja) | 蛍光体の表面処理方法及び蛍光膜 | |
JPH0762339A (ja) | 蛍光体膜およびその作製方法 | |
JPS6261293A (ja) | エレクトロルミネセンス装置 | |
JP4157243B2 (ja) | 蛍光体の表面処理方法及び蛍光膜 | |
US3603792A (en) | Luminescent screen having a separation medium therein | |
JP3436338B2 (ja) | ブラウン管用金属化発光スクリーンの製造方法 | |
US3819409A (en) | Method of manufacturing a display screen | |
US2758942A (en) | Cathode-ray tube of the kind comprising a luminescent screen | |
KR100236301B1 (ko) | 무기 전착액 조성물을 전착하여 형광막을 제조하는 방법 | |
JP3401296B2 (ja) | 酸化物陰極の製造方法 | |
KR100278503B1 (ko) | 전계방출 소자용 형광체 전착액 조성물 및 유기 전착법을 이용한 형광막 제조방법 | |
KR100312028B1 (ko) | 전기영동법을이용한교류형플라즈마디스플레이패널의형광체층형성방법 |