US3498764A - Ferrite memories - Google Patents

Ferrite memories Download PDF

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Publication number
US3498764A
US3498764A US537746A US3498764DA US3498764A US 3498764 A US3498764 A US 3498764A US 537746 A US537746 A US 537746A US 3498764D A US3498764D A US 3498764DA US 3498764 A US3498764 A US 3498764A
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Prior art keywords
ferrite
network
block
conductors
insulating
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Expired - Lifetime
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US537746A
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Tran Van Khai
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Thales SA
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CSF Compagnie Generale de Telegraphie sans Fil SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/06—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
    • G11C11/06085—Multi-aperture structures or multi-magnetic closed circuits, each aperture storing a "bit", realised by rods, plates, grids, waffle-irons,(i.e. grooved plates) or similar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H01F1/0311—Compounds
    • H01F1/0313—Oxidic compounds
    • H01F1/0315—Ferrites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49069—Data storage inductor or core
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12597—Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.]

Definitions

  • a ferrite memory comprising a ferrite plane block; a first network of parallel conductors on said block; a second network of parallel conductors on said first network intersecting said first network, said parallel conductors of said second network Ibeing insulated from said parallel conductors of said first network; and a ferromagnetic layer covering said block and said first and second networks, said layer being insulated from said parallel conductors of said networks.
  • FIG. 1 shows a plan View of a ferrite block prior to the removal of the superfluous insulating material
  • FIG. 2 is a cross-section along the line I-I of the block in FIG. 1;
  • FIG. 3 is a perspective view of the ferrite block after the removal of the surplus insulating material.
  • FIG. 4 is a cross-section along the line II-II of the block of FIG. 3 after the depositing of the ferro-nickel layer.
  • FIGS. l and 2 show, in plan view and in cross-section respectively, a ferrite -block 1 according to the invention prior to the removal of the superfiuous insulating material.
  • a network of parallel conductors 2 for example by evaporating under a vacuum, and then an insulating layer 4. In the case of evaporation under a vacuum, this layer will preferably be of silica.
  • a second network of conductors 3 is deposited at right angles to the first network and then a second layer of insulating material 5. The insulating material is then removed where there are no conductors, and a block of the type shown in perspective in FIG. 3 is obtained.
  • a ferromagnetic layer of an iron-nickel alloy 6 is deposited, for example by electrolysis. The ferromagnetic layer 6 assumes the shape of this surface, as shown in FIG. 4.
  • the invention is not limited to the embodiment described and shown which was given only by way of example.
  • the insulating and ferromagnetic layers may be applied by any known method without thereby departing from the invention.
  • a ferrite memory comprising a ferrite plane block; a first network of parallel conductors on said block; a first network of insulating parallel strips covering respectively said conductors and a second network of parallel conductors on said first network intersecting said first network, said parallel conductors of said second network being insulated by said insulating parallel strips from said parallel conductors of said first network; a further network of insulating parallel strips covering respectively said conductors of said second network; a ferromagnetic layer covering said block, said insulating parallel strips and said further insulating network.

Description

March 3, 1970 1'. VAN KHAI 3,498,764
FERRITE MEMORIES FledMarch 28, 1966 FIG.2
United States Patent O 3,498,764 FERRITE MEMORIES Tran van Khai, Paris, France, assignor to CSF-Compagnie Generale de Telegraphe San Fil, a corporation of France Filed Mar. 28, 1966, Ser. No. 537,746 Int. Cl. H01f 7/06; G11b 5/00 U.S. Cl. 29--183 5 Claims ABSTRACT OF THE DISCLOSURE The present invention relates to the manufacture of ferrite wafer memories.
It is known to use for the manufacture of such memories a grooved ferrite block into which the control wires are fitted and which is assembled together with a ferromagnetic layer of an iron-nickel alloy deposited on a glass substratum. This results in a structure having a certain airgap and therefore a certain fragility and a somewhat defective protection against external effects.
It is an object of this invention to provide a more robust memory with better protection against external factors in which the gap is filled with an insulator.
According to the invention there is provided a ferrite memory comprising a ferrite plane block; a first network of parallel conductors on said block; a second network of parallel conductors on said first network intersecting said first network, said parallel conductors of said second network Ibeing insulated from said parallel conductors of said first network; and a ferromagnetic layer covering said block and said first and second networks, said layer being insulated from said parallel conductors of said networks.
For a better understanding of the invention and to show how the same may be carried into effect reference will be made to the drawings accompanying the following description and in which:
FIG. 1 shows a plan View of a ferrite block prior to the removal of the superfluous insulating material;
FIG. 2 is a cross-section along the line I-I of the block in FIG. 1;
FIG. 3 is a perspective view of the ferrite block after the removal of the surplus insulating material; and
FIG. 4 is a cross-section along the line II-II of the block of FIG. 3 after the depositing of the ferro-nickel layer.
The same reference numerals designate the same elements throughout all the figures.
V 3,498,764 ce Patented Mar. 3, 1970 FIGS. l and 2 show, in plan view and in cross-section respectively, a ferrite -block 1 according to the invention prior to the removal of the superfiuous insulating material. On the ferrite block 1 is deposited a network of parallel conductors 2, for example by evaporating under a vacuum, and then an insulating layer 4. In the case of evaporation under a vacuum, this layer will preferably be of silica. Next a second network of conductors 3 is deposited at right angles to the first network and then a second layer of insulating material 5. The insulating material is then removed where there are no conductors, and a block of the type shown in perspective in FIG. 3 is obtained. On this prepared surface of the ferrite block, a ferromagnetic layer of an iron-nickel alloy 6 is deposited, for example by electrolysis. The ferromagnetic layer 6 assumes the shape of this surface, as shown in FIG. 4.
Of course the invention is not limited to the embodiment described and shown which was given only by way of example. In particular, the insulating and ferromagnetic layers may be applied by any known method without thereby departing from the invention.
What is claimed is:
1. A ferrite memory comprising a ferrite plane block; a first network of parallel conductors on said block; a first network of insulating parallel strips covering respectively said conductors and a second network of parallel conductors on said first network intersecting said first network, said parallel conductors of said second network being insulated by said insulating parallel strips from said parallel conductors of said first network; a further network of insulating parallel strips covering respectively said conductors of said second network; a ferromagnetic layer covering said block, said insulating parallel strips and said further insulating network.
2. A ferrite memory as claimed in claim 1, wherein said ferromagnetic layer is of an iron-nickel alloy.
3. A ferrite memory as claimed in claim 1, wherein said first and second networks intersect at right angles.
4. A ferrite memory as claimed in claim 1, wherein said networks are insulated from each other by means of silica.
5. A ferrite memory as claimed in claim 1, wherein said networks are insulated from said layer by means of silica.
References Cited UNITED STATES PATENTS 3,281,825 10/1966 Corl 340-174 X 3,337,856 8/1967 Bate 340--174 3,362,065 l/ 1968 Lauriente 29--604 L. DEWAYNE RUTLEDGE, Primary Examiner J. E. LEGRU, Assistant Examiner U.S. Cl. X.R.
US537746A 1966-03-28 1966-03-28 Ferrite memories Expired - Lifetime US3498764A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806899A (en) * 1972-04-10 1974-04-23 Hughes Aircraft Co Magnetoresistive readout for domain addressing interrogator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3281825A (en) * 1963-01-25 1966-10-25 United Aircraft Corp Non-contacting encoder
US3337856A (en) * 1963-06-28 1967-08-22 Ibm Non-destructive readout magnetic memory
US3362065A (en) * 1963-05-03 1968-01-09 Westinghouse Electric Corp Method of making sandwiched magnetic thin film memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3281825A (en) * 1963-01-25 1966-10-25 United Aircraft Corp Non-contacting encoder
US3362065A (en) * 1963-05-03 1968-01-09 Westinghouse Electric Corp Method of making sandwiched magnetic thin film memory
US3337856A (en) * 1963-06-28 1967-08-22 Ibm Non-destructive readout magnetic memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806899A (en) * 1972-04-10 1974-04-23 Hughes Aircraft Co Magnetoresistive readout for domain addressing interrogator

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