GB996978A - Magnetic memory devices and methods of making them - Google Patents

Magnetic memory devices and methods of making them

Info

Publication number
GB996978A
GB996978A GB2946861A GB2946861A GB996978A GB 996978 A GB996978 A GB 996978A GB 2946861 A GB2946861 A GB 2946861A GB 2946861 A GB2946861 A GB 2946861A GB 996978 A GB996978 A GB 996978A
Authority
GB
United Kingdom
Prior art keywords
plate
conductive material
hole
holes
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2946861A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US35336A external-priority patent/US3196330A/en
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB996978A publication Critical patent/GB996978A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/06—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Toys (AREA)

Abstract

996,978. Magnetic memory stores. RADIO CORPORATION OF AMERICA. Aug. 15, 1961 [Aug. 30, 1960], No. 29468/61. Heading H3B. [Also in Division H1] A magnetic memory unit is constructed by depositing electrically conductive material on both surfaces and in at least one hole which defines an information storage location in a square ferrite sheet, and removing some of the conductive material so as to provide four separate electrically insulated windings, each including conductive material on both sides of the sheet and in the hole or holes. Holes 23 are drilled through insulating ferrite plate 20, e.g. by an electron beam, to define an information storage region 24. The holes, which have a diameter (e.g. one mil.) which is small compared with the thickness (e.g. 10 mils.) of the plate, are filled with conductive material 25 by electroplating or dipping in solder. The conductors are formed by providing a single printed layer on each surface of the plate, extending over the whole storage region and with limbs extending over each edge of the plate to form terminal ends 33. The conductor is then cut (e.g. by an electron beam) between the holes to provide four separate conductors 27, 29 on each surface. In another embodiment a single hole four mils. in diameter is provided in the plate and is filled with conductive material. A printed layer is provided on each surface as before and a cross-shaped aperture 48 is cut out of the material in the hole (Fig. 6). In a further embodiment a cross-shaped hole filled with conductive material is provided in the plate and, after providing printed layers on the surfaces, a circular hole is drilled through the conductive material leaving material in the arms of the cross. The units may be formed into an array (Fig. 9) by mounting them in rows and columns on an insulating substrate with the protruding terminal ends 33 of adjacent units in contact. In a modification units having left-handed and right-handed curved conductors are arranged alternately (Fig. 10, not shown). It is stated that the two embodiments may be combined to reduce cross-talk. Instead of a square ferrite plate a strip may be used, having a plurality of storage regions along its length. A complete memory may also be formed from a single ferrite plate having storage regions arranged in rows and columns. Such a plate preferably has a thin central area containing the storage regions, and relatively thick edges.
GB2946861A 1960-06-10 1961-08-15 Magnetic memory devices and methods of making them Expired GB996978A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35336A US3196330A (en) 1960-06-10 1960-06-10 Semiconductor devices and methods of making same
US5290060A 1960-08-30 1960-08-30

Publications (1)

Publication Number Publication Date
GB996978A true GB996978A (en) 1965-06-30

Family

ID=26712005

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2946861A Expired GB996978A (en) 1960-06-10 1961-08-15 Magnetic memory devices and methods of making them

Country Status (3)

Country Link
FR (1) FR1291321A (en)
GB (1) GB996978A (en)
NL (1) NL268728A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL290680A (en) * 1962-06-19
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
US3275909A (en) * 1963-12-19 1966-09-27 Gen Electric Semiconductor switch
GB1263174A (en) * 1969-06-11 1972-02-09 Westinghouse Brake & Signal Semiconductor device

Also Published As

Publication number Publication date
FR1291321A (en) 1962-04-20
NL268728A (en)

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