US3448317A - Semi-conductive device for reducing distortion in electron optics - Google Patents

Semi-conductive device for reducing distortion in electron optics Download PDF

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Publication number
US3448317A
US3448317A US541910A US3448317DA US3448317A US 3448317 A US3448317 A US 3448317A US 541910 A US541910 A US 541910A US 3448317D A US3448317D A US 3448317DA US 3448317 A US3448317 A US 3448317A
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United States
Prior art keywords
layer
semi
center
electrodes
support
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Expired - Lifetime
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US541910A
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English (en)
Inventor
Walter Heimann
Otto Scherzer
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FORSCH LAB PROF DR ING W HEIMA
FORSCHUNGS LAB PROF DR ING W HEIMANN
HIEMANN W
W HIEMANN
Original Assignee
FORSCH LAB PROF DR ING W HEIMA
HIEMANN W
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/80—Arrangements for controlling the ray or beam after passing the main deflection system, e.g. for post-acceleration or post-concentration, for colour switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/56—Arrangements for controlling cross-section of ray or beam; Arrangements for correcting aberration of beam, e.g. due to lenses
    • H01J29/566—Arrangements for controlling cross-section of ray or beam; Arrangements for correcting aberration of beam, e.g. due to lenses for correcting aberration

Definitions

  • the present invention relates to a semi-conducting support for use with electron optics, and more particularly to such a support which is to be combined with a photocathode.
  • the aperture available must be decreased and thus the light intensity available for observation is limited. It is also possible to form a fluorescent screen with a curved surface, to reduce aberration, which, however, again substantially increases the difiiculty with optical observation of the screen.
  • a semi-conducting support of said carrier plate for use in combination with electron optics is formed on a carrier plate, and an electrical potential is applied thereover in a radial direction by electrodes applied as layers and separated except at their center by an insulating or semiconducting material.
  • At least one of the electrode layers is transparent and extends over the surface and is arranged in such a way, or is of such material and it has a predetermined resistance, so that a potential gradient is established in a radial direction, from the edge of the surface or screen toward-s the center where the electrodes are connected together, when the electrodes are connected to a source of potential.
  • the potential drop at the center Patented June 3, 1969 is thus different from the potential drop at the edge, by
  • the potential drop from the edge of the center may be linear, or non-linear with respect to radial distance.
  • a photo emission cathode may be applied directly over the electrode layer, or the electrode layer itself may be of a material which has the desired photo cathode effects, besides having the resistant characteristic-s above referred to.
  • one of the electrodes can be formed as a transparent screen layer, separated from the other electrode or the resistance material by an insulating layer from which a center has been left off, for example by masking, so that the electrodes come together at the center for an electrical connection avoids the shadow otherwise resulting from a lead to the center.
  • the transparent conductive layers may be tin oxide, SnO as an insulating layer, SiO, silicon oxide, or SiO may be used, which are evaporated on the support plate.
  • FIG. 1 illustrates, in schematic form, an electron-optical image transducer and, in FIG. 1a, the kind of distortion observable;
  • FIG. 2 shows an image converter similar to FIG. 1 with a concave cathode and, in FIG. 2a, the image to be desired;
  • FIG. 3 is a vertical cross sectional view through an arrangement of the screen in accordance with the present invention.
  • FIG. 4 is a partial plan view of the central portion of the screen in FIG. 3;
  • FIG. 5 illustrates, in schematic form, a screen in accordance with a modified form of the invention.
  • the electron-optical transducing system comprises, generally, an electronic system 20, and an optical system 30.
  • An electronic image 21 (FIG. 1) will appear, by projections through an electronic lens system not further illustrated, as the electronic image 22 on the reproduction screen 10.
  • the rays on the margin, 25, having to travel a greater distance than the central rays 24, are imperfectly focused and therefore blurr the edge of the image. If the rays from the margin of the cathode pass the other zones of the lens, they cause the distortion shown in FIG. la.
  • a raster as shown in FIG. 2a can be obtained, in accordance with the present invention, with a fiat transducing cathode by imposing a radially extending electrical field thereon.
  • a glass plate which may be circular, for example, has a transparent conductive layer 1 applied thereto. Layer 1 does not extend to the entire circumference of the disk but rather only over a portion thereof, up to a metal ring 2 which has an electrical lead 3a applied thereto, for example by extending through glass plate 5.
  • a transparent insulating layer 4, for example formed of SiO or SiO is applied over layer 1, for example by evaporation, in such a manner that the metallic ring 2 and the conductive layer 1 are just covered.
  • the insulating layer 4 has a central portion thereof removed; this can be achieved for example, by putting a mask over the center, during evaporation.
  • the center aperture of the insulating layer 4 is toothed or star shaped as shown in FIG. 4.
  • an electrical connection to conductive layer 1 can be established at the center.
  • Transparent conductive layer 1a is then applied over insulating layer 4. Again, layer 1a may be evaporated over the insulating layer. Layer 1a is connected to a metallic ring 3 arranged at the outside of plate 5, which ring 3 is again connected to connection 3a. An electrical potential, placed between rings 2 and 3 by means of battery 3b, in which ring 2 is connected to the negative side and ring 3 to the positive, will cause a regularly extending potential gradient to result across the face of layer 1a. The layers 1, 1a have some resistance. Depending upon the value of the potential applied, aberrations as shown in FIG. 1a are compensated more or less; by making the source 3b variable, complete compensation to obtain a raster in accordance with FIG.
  • Layers 1, 4, and 1a can be held very thin, so thin that the difference in thickness (shown exaggerated in FIG. 3) at the center is not noticeable.
  • Layer 1a may, in itself, form a photo cathode, or have other photo cathode material evaporated thereon or otherwise applied thereto.
  • a transparent conductive layer 8 is again applied to a glass carrier plate 5, as before.
  • Layer 8 is connected, as before to lead 3a, and then to a battery 3b.
  • a semi-conductive layer 7 is then deposited, for example vapor deposited over layer 8.
  • Semi-conductive layer 7 has a high resistance layer 6 applied thereover; for purposes of connection, a ring 6a may be used, applied over layer 7.
  • the resistance distribution of layer 6, taken vertically in FIG. 5, need not be homogeneous; on the contrary, the resistance distribution may be arranged in such a manner that when a potential is applied between layers 6 and 8, a suitable potential gradient results which is proportional to the radius in the center of the disk, and non-linear at the peripheral portion.
  • the nonlinearity can readily be changed by varying the thickness of the applied layer 6 or of the semi-conductor layer 7 beneath, or changing the physical composition of either the applied layer 6, or the semi-conductive layer 7.
  • Distortion having outwardly bending lines as illustrated in FIG. la can thus be compensated perfectly so that a raster in accordance with FIG. 2a is obtained; higher order distortions, which sometime arise and cause undulating lines towards the peripheral region, can, by suitable choice of the resistance distribution of layer 6 or layer 7, be avoided entirely, when the distribution of resistance is made non-linear. Particularly, distortions of the fifth Seidel orders can be compensated in this summer.
  • a desirable potential drop distribution, from the center portion of the surface toward the edge portion may vary, for example, with the square of the radius.
  • a suitable material for layers 1, 1a (FIG. 3) or layers 6, 8 (FIG. 5) is SnO
  • a suitable material for semi-conductive layer 7 (FIG. 5) is an electron-conducting glass.
  • Semi-conductive support for use in combination with electron optics comprising a carrier plate
  • first and second separated superposed electrodes applied to a surface of said carrier plate and extending essentially over the entire surface and adapted to be connected to a source of potential;
  • a layer of insulating material located between said electrodes and covering said first electrode except for a small center region to insulate and separate said electrodes from each other, except at the center, the unseparated center region of the electrodes forming an electrical connection between both electrodes to establish, upon connection of said electrodes to a voltage source, a potential gradient radially between the edge and said center region over the extent of said surface.
  • one of said electrodes includes a composition of material forming a photo cathode.
  • Support as claimed in claim 1 including a layer of semi-conductive material covering one of said electrodes; the other of said electrodes being formed by a thin, transparent layer of high resistance material covering said layer of semi-conductive material.
  • At least one of said electrodes is a transparent, thin conductive layer.

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  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Electron Beam Exposure (AREA)
US541910A 1965-03-26 1966-03-23 Semi-conductive device for reducing distortion in electron optics Expired - Lifetime US3448317A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEF0045635 1965-03-26
DEF0047253 1965-09-21

Publications (1)

Publication Number Publication Date
US3448317A true US3448317A (en) 1969-06-03

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Application Number Title Priority Date Filing Date
US541910A Expired - Lifetime US3448317A (en) 1965-03-26 1966-03-23 Semi-conductive device for reducing distortion in electron optics

Country Status (4)

Country Link
US (1) US3448317A (ja)
DE (2) DE1489869C3 (ja)
GB (1) GB1137669A (ja)
NL (1) NL6603568A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936687A (en) * 1971-03-01 1976-02-03 U.S. Philips Corporation Photocathode with plurality of concentric conducting rings
FR2685811A1 (fr) * 1991-12-31 1993-07-02 Commissariat Energie Atomique Systeme permettant de maitriser la forme d'un faisceau de particules chargees.
US5493176A (en) * 1994-05-23 1996-02-20 Siemens Medical Systems, Inc. Photomultiplier tube with an avalanche photodiode, a flat input end and conductors which simulate the potential distribution in a photomultiplier tube having a spherical-type input end

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2622219A (en) * 1949-07-09 1952-12-16 Hartford Nat Bank & Trust Co Television image tube
US2908835A (en) * 1954-10-04 1959-10-13 Rca Corp Pickup tube and target therefor
US3048728A (en) * 1958-09-09 1962-08-07 English Electric Valve Co Ltd Television and like camera tubes
US3118084A (en) * 1962-06-29 1964-01-14 Gen Electric Vertical deflection arrangement
US3155872A (en) * 1961-09-29 1964-11-03 Gen Electric Flat display tube utilizing voltage gradient deflection layer
US3204142A (en) * 1959-09-17 1965-08-31 Philips Corp Pickup tube having photoconductive target
US3260876A (en) * 1963-04-03 1966-07-12 Philips Corp Image intensifier secondary emissive matrix internally coated to form a converging lens
US3289024A (en) * 1963-03-12 1966-11-29 Philips Corp Photo-sensitive device including layers of different conductivity types
US3308330A (en) * 1962-03-30 1967-03-07 Charles Daniel Cold emission electron discharge device
US3321665A (en) * 1964-10-16 1967-05-23 Bendix Corp Method and apparatus for producing a steerable electric potential

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2622219A (en) * 1949-07-09 1952-12-16 Hartford Nat Bank & Trust Co Television image tube
US2908835A (en) * 1954-10-04 1959-10-13 Rca Corp Pickup tube and target therefor
US3048728A (en) * 1958-09-09 1962-08-07 English Electric Valve Co Ltd Television and like camera tubes
US3204142A (en) * 1959-09-17 1965-08-31 Philips Corp Pickup tube having photoconductive target
US3155872A (en) * 1961-09-29 1964-11-03 Gen Electric Flat display tube utilizing voltage gradient deflection layer
US3308330A (en) * 1962-03-30 1967-03-07 Charles Daniel Cold emission electron discharge device
US3118084A (en) * 1962-06-29 1964-01-14 Gen Electric Vertical deflection arrangement
US3289024A (en) * 1963-03-12 1966-11-29 Philips Corp Photo-sensitive device including layers of different conductivity types
US3260876A (en) * 1963-04-03 1966-07-12 Philips Corp Image intensifier secondary emissive matrix internally coated to form a converging lens
US3321665A (en) * 1964-10-16 1967-05-23 Bendix Corp Method and apparatus for producing a steerable electric potential

Also Published As

Publication number Publication date
DE1489869C3 (de) 1973-11-29
DE1489884C3 (de) 1974-03-14
DE1489884A1 (de) 1969-04-03
GB1137669A (en) 1968-12-27
NL6603568A (ja) 1966-09-27
DE1489884B2 (de) 1973-08-09
DE1489869B2 (de) 1973-04-19
DE1489869A1 (de) 1969-04-03

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