US3427709A - Production of circuit device - Google Patents

Production of circuit device Download PDF

Info

Publication number
US3427709A
US3427709A US504568A US3427709DA US3427709A US 3427709 A US3427709 A US 3427709A US 504568 A US504568 A US 504568A US 3427709D A US3427709D A US 3427709DA US 3427709 A US3427709 A US 3427709A
Authority
US
United States
Prior art keywords
layer
resistance
low
regions
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US504568A
Other languages
English (en)
Inventor
Hans-Jurgen Schutze
Klaus Hennings
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Application granted granted Critical
Publication of US3427709A publication Critical patent/US3427709A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Definitions

  • y(b) partially enclosing each such region by covering at least part of such one surface and at least a lateral surface portion extending between the opposed surfaces with a low-resistance layer so as t-o establish a highly conductive connection between such one surface and a terminal mounted on the other opposed surface of such region.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
US504568A 1964-10-30 1965-10-24 Production of circuit device Expired - Lifetime US3427709A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DET0027325 1964-10-30
DET0027657 1964-12-19

Publications (1)

Publication Number Publication Date
US3427709A true US3427709A (en) 1969-02-18

Family

ID=25999954

Family Applications (1)

Application Number Title Priority Date Filing Date
US504568A Expired - Lifetime US3427709A (en) 1964-10-30 1965-10-24 Production of circuit device

Country Status (3)

Country Link
US (1) US3427709A (de)
DE (2) DE1439736A1 (de)
GB (1) GB1129891A (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
US3787252A (en) * 1968-07-05 1974-01-22 Honeywell Inf Systems Italia Connection means for semiconductor components and integrated circuits
US4008107A (en) * 1973-09-27 1977-02-15 Hitachi, Ltd. Method of manufacturing semiconductor devices with local oxidation of silicon surface
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
US4312115A (en) * 1976-12-14 1982-01-26 Heinz Diedrich Process to obtain multielement linear bidimensional infrared detectors having improved exactness of geometry and high degree of integration
US4861731A (en) * 1988-02-02 1989-08-29 General Motors Corporation Method of fabricating a lateral dual gate thyristor
US20090195948A1 (en) * 2006-02-01 2009-08-06 Edvard Kalvesten Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1603260A (en) * 1978-05-31 1981-11-25 Secr Defence Devices and their fabrication

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967344A (en) * 1958-02-14 1961-01-10 Rca Corp Semiconductor devices
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3054034A (en) * 1958-10-01 1962-09-11 Rca Corp Semiconductor devices and method of manufacture thereof
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3237062A (en) * 1961-10-20 1966-02-22 Westinghouse Electric Corp Monolithic semiconductor devices
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3340601A (en) * 1963-07-17 1967-09-12 United Aircraft Corp Alloy diffused transistor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967344A (en) * 1958-02-14 1961-01-10 Rca Corp Semiconductor devices
US3054034A (en) * 1958-10-01 1962-09-11 Rca Corp Semiconductor devices and method of manufacture thereof
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3237062A (en) * 1961-10-20 1966-02-22 Westinghouse Electric Corp Monolithic semiconductor devices
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
US3340601A (en) * 1963-07-17 1967-09-12 United Aircraft Corp Alloy diffused transistor
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
US3787252A (en) * 1968-07-05 1974-01-22 Honeywell Inf Systems Italia Connection means for semiconductor components and integrated circuits
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
US4008107A (en) * 1973-09-27 1977-02-15 Hitachi, Ltd. Method of manufacturing semiconductor devices with local oxidation of silicon surface
US4312115A (en) * 1976-12-14 1982-01-26 Heinz Diedrich Process to obtain multielement linear bidimensional infrared detectors having improved exactness of geometry and high degree of integration
US4861731A (en) * 1988-02-02 1989-08-29 General Motors Corporation Method of fabricating a lateral dual gate thyristor
US20090195948A1 (en) * 2006-02-01 2009-08-06 Edvard Kalvesten Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
US9312217B2 (en) * 2006-02-01 2016-04-12 Silex Microsystems Ab Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections

Also Published As

Publication number Publication date
DE1439758C3 (de) 1973-10-11
DE1439736A1 (de) 1969-03-27
DE1439758A1 (de) 1969-10-23
DE1439758B2 (de) 1973-03-22
GB1129891A (en) 1968-10-09

Similar Documents

Publication Publication Date Title
US3183129A (en) Method of forming a semiconductor
US3412460A (en) Method of making complementary transistor structure
USRE26803E (en) Hioh frequency power transistor
US3508980A (en) Method of fabricating an integrated circuit structure with dielectric isolation
US3202887A (en) Mesa-transistor with impurity concentration in the base decreasing toward collector junction
US3293087A (en) Method of making isolated epitaxial field-effect device
US3430110A (en) Monolithic integrated circuits with a plurality of isolation zones
US3358197A (en) Semiconductor device
US3524113A (en) Complementary pnp-npn transistors and fabrication method therefor
US3335341A (en) Diode structure in semiconductor integrated circuit and method of making the same
US3506893A (en) Integrated circuits with surface barrier diodes
US3252003A (en) Unipolar transistor
US3443176A (en) Low resistivity semiconductor underpass connector and fabrication method therefor
US3427709A (en) Production of circuit device
US3546542A (en) Integrated high voltage solar cell panel
US3237062A (en) Monolithic semiconductor devices
US3535600A (en) Mos varactor diode
US3434019A (en) High frequency high power transistor having overlay electrode
US3233305A (en) Switching transistors with controlled emitter-base breakdown
US2945286A (en) Diffusion transistor and method of making it
US3762966A (en) Method of fabricating high emitter efficiency semiconductor device with low base resistance by selective diffusion of base impurities
US3850707A (en) Semiconductors
GB1224801A (en) Methods of manufacturing semiconductor devices
US3473979A (en) Semiconductor device
US3988759A (en) Thermally balanced PN junction