US3392066A - Method of vapor growing a homogeneous monocrystal - Google Patents

Method of vapor growing a homogeneous monocrystal Download PDF

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US3392066A
US3392066A US332563A US33256363A US3392066A US 3392066 A US3392066 A US 3392066A US 332563 A US332563 A US 332563A US 33256363 A US33256363 A US 33256363A US 3392066 A US3392066 A US 3392066A
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temperature
substrate
chamber
crystal
radiation
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Philip S Mcdermott
Gerald W Manley
Ralph J Riley
Lawrence R Yetter
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International Business Machines Corp
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International Business Machines Corp
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Priority to US332563A priority Critical patent/US3392066A/en
Priority to GB47506/64A priority patent/GB1087268A/en
Priority to NL646414015A priority patent/NL147645B/xx
Priority to SE15202/64A priority patent/SE319750B/xx
Priority to DE1544200A priority patent/DE1544200C3/de
Priority to CH1635464A priority patent/CH426740A/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912—Charge transfer device using both electron and hole signal carriers

Definitions

  • FIG. 5 RADIATION WAVELENGTH (MICRONS) .LOOOO OOOO I32; 2 zockoloi 1 ll
  • Two independently coolable heat sinks permit separate control of the temperature of the substrate and source regions of the chamber.
  • the process involves first causing vapor transport from the substrate to the source (by controlling the temperature differential bet-ween source and substrate areas) to cleanse the growth receiving surface of the substrate. Thereafter, the process is reversed and growth is deposited on the substrate. High quality growth is achieved by maintaining substrate temperature just above the temperature at which a condensate is produced on the substrate.
  • the vapor growth process produces high quality monocrystals of III and V valence group elements. Semiconductor devices fabricated from such crystals exhibit spontaneous and stimulated emission of radiation in the 0.9 to 3.2 micron range of wavelengths.
  • lasers an acronym derived I from light amplification by stimulated emission of radiation.
  • Devices of this type are capable of producing radiation which is highly directional, coherent, and monochromatic. They have received wide publicity in the past severalyears. Utility for lasers has been found in various areas, for example, in the fields of communication, object detection and ranging, and data handling. In addition, these devices appear to have considerable utility as sources of destructive force.
  • spontaneous emission of radiation
  • the radiation provided by spontaneous emission is not as highly coherent as stimulated emission, nor is it as monochromatic.
  • Spontaneously emitted radiation or fluorescence is, however, of generally narrow bandwidth and .it is highly useful, for example, for short range communication, etc.
  • the establishment of spontaneous and stimulated emission of radiation involves the creation of an artificial dis
  • the band of emitted wavelengths is commonly referred to as the emittedfline.
  • the line is said to have a width which is essentially the difference in wavelength between the half power points of the distribution curve
  • the line has a central wavelength at which maximum output radiation intensity is observed and this is known as the line maximum wavelength.
  • Spontaneous emission is a radiative process in which the energy transitions that result in photon emission are not necessarily influenced by the presence of other similar photons. As the pumping energy is increased, emission of photons in one mode begins to occur at the'expense of other modes. It appears that emitted photons strike excited atoms and influence the emission of additional photons in fixed phase relation so that mode selectivity is achieved. This phenomenon, which is evidenced by a substantial narrowing of the emission line as well as an increase in coherency and directionality of the output radiation, is known as stimulated emission.
  • the host environment in which the radiation is produced may take any of several forms.
  • the host environment may be either a gas, such as helium-neon mixture or it may be a crystal of one of several different compositions.
  • the emission has been produced by pumping energy in the form of light or, in the case of crystals of semiconductor material, the pumping energy may be supplied by injecting electrons into the semiconductor. It is toward the devices of the semiconductor type that the present invention is directed.
  • Spontaneous and stimulated emission of radiation from semiconductive materials is achieved by providing in the material a p-n junction and injecting minority carriers across the junction in a forward bias direction in appropriate density.
  • the emission is produced bythe mechanism previously described in response to carrier recombination via the junction.
  • a detailed explanation of the vphenomena may be found in several recent articles, for example Semiconductor Lasers, by B. Lax in Science, vol. 141, No. 3587, Sept. 27, 1963, pp. 1247-1255.
  • Other references are cited in the copending application, Ser. No. 230,607, by Burns et a1., filed Oct. 15, 1962'and assigned to the assignee hereof.
  • Spontaneous and stimulated emission of radiation has been observed in semiconductor diodes of several compounds of elements in the III and V valence groups, such as gallium arsenide, indium arsenide, indium phosphide, and more recently gallium arsenide phosphide and indium gallium arsenide.
  • the wavelength of the emission from diode devices is a function of the composition and in the case of most of those compounds mentioned above, is observed to be in the sub-micron range.
  • Another object of the invention is to provide improved means and methods of growing homogeneous single crystals of controlled composition.
  • a further object of the invention is to provide an improved method for producing compounds of controlled composition within the system In(As P in the form of homogeneous single crystals of desired size.
  • Still another object of the invention is to provide means for growing homogeneous single crystals of controlled composition and for imultaneously doping said crystals with selected impurities.
  • Another primary object of the invention is to provide novel solid state devices for producing spontaneous and stimulated radiation in the infrared portion of the radiation spectrum.
  • a further object of the invention is to provide injection diodes having out-put radiation wavelengths which correspond to favorable transmission regions or atmospheric windows in the infrared portion of the radiation spectrum.
  • FIG. 1 is a perspective view illustrating the crystal growing apparatus provided in accordance with this invention.
  • FIG. 2 is a longitudinal vertical sectional view taken through the reaction chamber which forms part of the apparatus of FIG. 1;
  • FIG. 3 is a diagrammatic illustration of an injection diode provided in accordance with this invention.
  • FIG. 4 is a graph showing the bandwidth of radiation produced in the cases of spontaneous and stimulated emission from a typical diode provided in accordance with this invention.
  • FIG. 5 is a graph showing the corelation between radiation wavelength and composition for diodes provided in accordance with this invention.
  • the meansand methodsof this invention havebeen employed to produce novel high ,quality homogeneous single crystals of controlled composition in the system In'(As P
  • the process by which crystals are grown inaccordance with this invention is a vapor transport process by which elements are caused to be deposited by disproportion tion reaction on a substrate from source materials at temperatures lower than the melting points of the elements involved.
  • the principles of vapor growth and disproportionation reactions are known in the art'and will not be discussed in detail herein. Detailed information on this subject is available in a group of five articles in' the IBM Journal of Research and Development, vol. 4, No. 3, July 1960, at pages 248 through 279, andin the references listed in these articles.
  • disproportionation reaction involves the transport of materials in the form of vapor phase iodides (iodine being the transport agent) from source materials at one temperature to a receiving substrate at a lower temperature.
  • the improved vapor growing process of this invention is carried out with the apparatus shown in FIGS. 1 and 2 of the drawing.
  • the apparatus includes a quartz chamber 10 having a generally semicylindrical outline with a flattened floor section 12. At one end of the chamber 10 a flat transparent quartz end wall 14 is fused to form a viewing window and to seal that end of the chamber. The opposite end is initially open to permit the various materials to be used in the growing process to be loaded.
  • the chamber is evacuated and this end of the chamber is eventually sealed by fusing a-quartz plug 16 in place, as shown in FIG. 2.
  • the reaction chamber 10 is arranged to have two temperature regions, as will be explained more fully later herein, and these are provided by attaching beneath the floor 12 of the chamber at spaced points a pair of metallic blocks 18 and 20 to act as heat sinks.
  • the heat sinks 18 and 20 are held in place by bands 19'and 21 as shown.
  • These heat sinks are preferably fabricated of a substance such as silver which has high conductivity and will withstand the temperature involved.
  • the heat sinks 18 and 20 have fluid conducting apertures 22 formed therein and fluid lines 24 and'26 are connected thereto to permit circulation of cool-ant, such as air, through the sinks.
  • the fluid lines 24 and 26 are coupled to suitable circulating means (not shown) for pumping coolant through the heat sinks 18 and 20.
  • the circulating means for the line 24 is independent of the means for the line 26 so that different temperatures can be maintained at the heat sinks 18 and 20.
  • Temperature sensing means 28 and 30 are provided'for accurately detecting the temperature of the heat sinks 18 and 20. In the embodiment shown in FIGS. 1 and 2 these sensing means are in the form of thermocouples contacting the metallic heat sinks.
  • the thermocouples are connected to suitable temperature registering means (not shown). I
  • the heat sinks 18 and 20 and their-associated temper ature control and indicating means provide two regions of variable temperature in the chamber 10.
  • the region adjacent the sink 18 is a deposition regionand that adjacent the sink 20 is a source region.
  • Into the chamber immediately above the heat sink Bis-placed a substrate32 upon which the crystal is to be grown, and'above the heat sink 20 are placed pieces 34 and 36 of the materialswhich are to be used as sources. I
  • the substrate 32 To insure growth of a monocrystal of high quality and perfection the substrate 32 must be carefully prepared. It is essential that the substrate 32 be itself a monocrystal and that it be out along crystallographic planes to provide a growth receiving surface .33 aligned along a'desired plane.
  • the substrate need not be of the same composition as the crystal to be grown thereon.
  • the substrate should be of a material having a lattice spacing similar .to that of the crystal to be grown.
  • substrates of monocrystal indium arsenide were used. These substrates were cut from monocrystal ingots previously aligned by X-ray techniques, to provide growth receiving surfaces along the (100) crystallographic plane.
  • the receiving surface 33 of each substrate 32 is polished using a glass plate and an abrasive of 600 mesh SiC, and then buffed with an alcohol and bromide mixture on 0.1 micron grit polishing paper.
  • the donor or source pieces 34 and 36 are obtained as ingots includingall of the elements to be combined in the deposited crystal.
  • In growing crystals of the system In(As) P ingots of InAs and InP are employed.
  • the ingots may be polycrystalline and need not be out along crystallographic planes. It has been found that the composition of the grown crystal is proportional to the respective areas of the ingot surfaces which face the substrate in the reaction chamber.
  • the etching of the source materials occurs primarily at these faces, although some etching of the top and side surfaces is also observed.
  • the relation of face area to final composition is suificient, however, to permit composition control to within tolerances in the order of a few percent. Accordingly, the source ingots 34 and 36 are cut so that the areas of faces 35 and 37 are in proportion to the desired composition of the final product. For example, if a crystal of In(As P is desired,
  • the areas of the faces 35 and 37 of the ingots are made equal. If a crystal of In(As P then the ingots 34 and 36 are cut so that the areas of faces 35 and 37 provide the ratio 2:8.
  • the source ingots 34 and 36 are polished with glass plates and 600 mesh SiC abrasive and cleaned with an alcohol bromide solution to insure that all surfaces thereof are regular and free of foreign material. They are then placed in the chamber directly over the heatsink-ZO with the surfaces and 37 facing the substrate. 7
  • the crystal grown in the reaction chamber is simultaneously doped as it is grown, so it is necessary to provide in the chamber an amount of doping material.
  • the doping material is chosen in accordance with the type of impurity desired in the crystal.
  • the iodine loading process just described is but one of several processes which may be employedfor the purp0se. Those familiar with the vapor growing art Willrecognize that other processes are also available.
  • a furnace for example, a clam shell furnace 38 is shown in FIG. 1.
  • the furnace isclosed and sealed to prevent undesirable air currents around the chamber 10.
  • the viewing port may take the form of a quartz plate at the left end of the clam shell furnace 38.
  • the growth process is initiated by heating the furnace to a temperature of about 830 C.
  • the furnace is held at this temperature for the duration of the process.
  • the interior of the chamber 10 Will be observed to take on first an iodine violet color and then the yellowish color characteristic of indium iodides.
  • the coolant controls for the heat sink 20 are operated to reduce the temperature of the source area.
  • Sufficient coolant is circulated to maintain the source area about 100 C. below the ambient furnace temperature.
  • the deposition region is not cooled appreciably. It may be maintained a few degrees below the ambient furnace temperature to provide for positive control in either direction.
  • the purpose of cooling the source region is to produce some vapor transport from the substrate to the source to clean the surface 33, and to insure that any undesirable low temperature reaction products are condensed in the source region and do not contaminate the substrate.
  • the temperature increases above about 500 C. the upper surface of the substrate is observed to change texture and become substantially glossy. This change in appearance occurs in response to etching of the surface by the iodine vapor.
  • etching of the substrate surface cleans it in preparation for the subsequent deposition and is found to be necessary to insure growth of a high quality crystal. While etching commences with the surface of the substrate facing the source region, sufiicient etching I occurs at the surface 33 to clean it before the front is appreciably eaten away.
  • the pre-etching process does not require a substantial time and may be considered complete after about 10
  • the transport agent used is semiconductor grade iodine;
  • the chamber 10 is evacuated, by connection to the manifold of a-vacuum pump (not shown), before the iodine is introduced.
  • The'iodine is placed in a separatevessel which is also connected to the-manifold through a valve which is initially closed.
  • the chamber 10 has been minutes or when the substrate surface has taken on a uniform glossy appearance.
  • the process will usually be complete by the time the furnace has reached 800 C.
  • the supply of coolant to the source area heat sink 20 is diminished and it is allowed to approach the furnace temperature within a few degrees.
  • coolant is circulated through the heat sink 18 at the deposition region of chamber 10 to cool that area. As the temperature at the source region builds, substantial etching of the source ingots 34 and 36 is observed.
  • Coolant is supplied to the deposition region heat sink in sufficient quantities to lower the temperature of that region below the dewpoint of the iodides present in the chamber, as evidenced by the formation of a condensate upon the surface of the substrate.
  • the coolant flow is carefully diminished to allow the temperature at the deposition region to increase slowly.
  • the dewpoint temperature is passed, the condensate on the substrate 32 will disappear. This temperature, which may vary somewhat due to differences in proportions of source materials present and to dopant concentrations, etc., may
  • the deposition region temperature is allowed to increase only slightly (about to C.) above the indicated dewpoint and then the coolant flow is adjusted to hold a constant temperature. This temperature is considerably below that at the source region, as shown in the 3rd and 4th columns of Table 1. Under these conditions, a monocrystal of composition controlled in accordance with the source 'ingotproportions, as explained earlier, and doped with the impurity provided, will be observed to grow on the substrate. If the conditions have been properly established, good uniformity of growth will be observed. The quality of the crystal is visually determined by noting uniform glossy growth over the entire surface of the substrate.
  • the furnace power is discontinued and the system is allowed to cool down.
  • the flow of coolant to heat sink 18 is diminished and the deposition region is allowed to approach chamber temperature.
  • Coolant is supplied to the source region heat sink 20 at this time to cool it down considerably faster than the remainder of the system. This action insures termination of growth at the substrate and causes all remaining reaction products to be precipitated at the source region to prevent possible contamination of the grown crystal.
  • any desired composition in the In(As P system may be produced in the form of high quality homogeneous monocrystals.
  • Diodes are fabricated from the crystals produced in accordance with this invention, in a known manner. A typical procedure for fabricating a diode such as'the one shown in FIG. 3, from a crystal doped with n-type impurity is described below.
  • the substrate containing the grown homogeneous single crystal layer is first oriented by use of an X-ray difiractometer, for example, to enable the crystal to be cut to provide a surface along the (100) crystallographic plane.
  • the crystal is ground and polished along thisplane to provide a surface free of defects and imperfections. The surface will become the face 40 of the finished diode. After polishing, the crystal is washed, dried, and prepared for diffusion of a junction therein.
  • the crystal is sealed in a quartz container containing a small quantity of zinc arsenide', for example 2 mg. for a container of 6 cc., and the container is evacuated to about 10" torr.
  • the container is thereafter heated in a furnace at about 650 C. for a period of about two hours.
  • the zinc diffuses into the crystal from the various surfaces including the polished (100) plane surface, forming a p-type region in the n-type crystal.
  • a junction, shown at 42 in FIG. 3,parallel with the (100) plane is formed between the p and 11 regions at a depth of about 1 mil from the polished surface.
  • the crystal is ground to provide a surface along the (100) plane on the side of the crystal opposite the previously polished surface. This will become the surface 44 of the finished diode.
  • the grinding is carried to.a depth sufficient to insure removal of any p-type material created on that side of the material and to reduce the thickness between the opposed surfaces to the order of about 5 mils.
  • the crystal now in the form of a 5 mil thick wafer, is again washed and dried and provided with ohmic metallic contacts 46 and 48 on the (100) plane surfaces 40 and 44 by any known means, for example, electroless deposition.
  • the finished diode have end surfaces 50 and 52 perpendicular to the junction which are optically flat and parallel to each other.
  • the purpose of these surfaces is to reflect a portion of the radiation produced in the junction region and to reinforce the emission in a known manner. While these surfaces may be produced by grinding and polishing, it is preferable to produce them by cleaving the crystal along the (110) crystallographic plane. The wafer is cleaved to provide two end surfaces along the (110) plane spaced about 17 mils apart.
  • a crystal may be grown from a pair of source crystals, one of which has been previously doped to a known extent, and the other of which is undoped. By varying the proportions of the doped and undoped source crystal, any dopant concentration may be achieved.
  • the two side edges 54 and 56 of the finished diode are produced by sawing.
  • the completed diode shown on FIG. 3, is provided with suitable electrical conductors 58 and 60 which are attached to the ohmic contact surfaces 46 and 48, to provide means for injecting carriers therein.
  • Diodes fabricated as just described are operated as radiation emitting devices by injecting current thereto via the electrodes from a power source 62.
  • Spontaneous emission of radiation from these diodes hasbeen achieved with injection current densities as low as 525 amp per square centimeter attemperatures of 77 K. and at injec tioiicurrentdensities of 600 amp/cm. at'room temperature.
  • Stimulated emission, or true laser ac'tion is' achieved with current densities ofas low as 6400 amps persquare centimeter at temperatures of 77 K; for a typicalsample.
  • B'o'th spontaneous and stimulated emission have been obtained-in th'eabsence of any magnetic field.
  • TableII gives data relating to actual operation of diodes fabricated from crystals grown in accordance with this invention.
  • Table II the leftmost" column-indicates the crystal sample from which thedi'odjeiwas fabricated.
  • Table :I gives the growth information concerningithat sample.
  • crystals are unique in-the provisionof independent control of the conditions at-the' source and substrate regions of the growth chamber, so that 'precleaning of the substrate is possible, so that low temperature reaction products may be kept away from the'substrate-bothduring the heat-up. and cooling phases of thegrowth process, and so that conditions may be adjusted during growth.
  • Another unique feature resides in the ability .toview the process throughoutits duration to monitor the growth and determine the actions. tobe takento maintainoptimum growth conditions.
  • Another unique featurezof. the growth process resides in the recognitionthat growth of TABLE II i i d :Spontaneous Emission Data Stimulated Emission Data e I Sample Temp. Current Line Max. Line Width Current Line Max. Line Width K.) Density, Wavelength (microns) Density W'avele'ngth (microns) amp/cm. (microns) amp/cm.
  • the spontaneous emission was produced by injection current in the p jection current pulses having a duration of 50 nanoseconds and a repetition rate of 60 pulses per second.
  • MRM21 pulses 500 nanoseconds duration and a repetition rate of 100 p.p.s. were employed.
  • Table II shows the Wide range of radiation wavelengths that are obtained with diodes provided in accordance with this invention. While data was not obtained for stimulated emission in all cases, the several examples of laser action which are given indicate the presence of a substantial range.
  • the line width obtained for the laser beam of the diode of MRM21 material when operated at 2 K. is extremely narrow. Since the wavelength of this material corresponds with one of the atmospheric windows in the infrared, it may be expected to be of significant importance.
  • MRM21 diode displayed spontaneous emission at a reasonable current density at room temperature.
  • the ability to emit light at this temperature is unique and, of course, of considerable importance.
  • FIG. 4 of the drawings illustrates the emission characteristics of the MRM21 diode at 77 K. It will be observed that the spontaneous emission distribution curve 64 has the characteristic bell shape. The line Width for spontaneous emission is about 600 Angstrom units. When the stimulated emission threshold is passed, the line narrows significantly (to about 23 Angstrom) as shown by curve 66, and the peak intensity goes up considerably.
  • FIG. 5 of the drawings illustrates the peak wavelengths of the various crystals grown in accordance with this invention. As shown in the chart, a substantially complete spectra of wavelengths between the InAs and InP wavelengths is provided. Any selected radiation wavelength may be obtained simply by adjusting the AsrP ratio in the crystal grown in accordance with this invention.
  • the present invention provides the capability of producing high quality homogeneous monocrystals of controlled composition from which radiation emitting diodes may be fabricated.
  • the means and methods for providing such In(As P compounds is best achieved when the substrate region temperature is .only slightly above the dewpoint of the species present in that region of the chamber.
  • a method of vapor growing a homogeneous monocrystal of controlled composition in III and V valence 8 groups comprising:
  • said temperature of said chamber is between 750 C.
  • said source materials are ingots comprised of indium arsenide and indium phosphide; and said substrate is a monocrystal of indium arsenide.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US332563A 1963-12-23 1963-12-23 Method of vapor growing a homogeneous monocrystal Expired - Lifetime US3392066A (en)

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Application Number Priority Date Filing Date Title
US332563A US3392066A (en) 1963-12-23 1963-12-23 Method of vapor growing a homogeneous monocrystal
GB47506/64A GB1087268A (en) 1963-12-23 1964-11-23 A method of producing an homogeneous monocrystal
NL646414015A NL147645B (nl) 1963-12-23 1964-12-03 Werkwijze voor het vormen van monokristallijn halfgeleidermateriaal door aangroeiing en voorwerp, geheel of ten dele bestaande uit een aldus verkregen monokristal.
SE15202/64A SE319750B (xx) 1963-12-23 1964-12-16
DE1544200A DE1544200C3 (de) 1963-12-23 1964-12-17 Verfahren zur Herstellung von Halbleiterkörpern
CH1635464A CH426740A (de) 1963-12-23 1964-12-18 Verfahren zur Herstellung eines Halbleiterelements, nach diesem Verfahren hergestelltes Element, und Verwendung desselben

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
CN114990358A (zh) * 2022-04-12 2022-09-02 中南大学 一种掺杂砷烯纳米片、及其制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
US3224913A (en) * 1959-06-18 1965-12-21 Monsanto Co Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
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US3224913A (en) * 1959-06-18 1965-12-21 Monsanto Co Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
US3224911A (en) * 1961-03-02 1965-12-21 Monsanto Co Use of hydrogen halide as carrier gas in forming iii-v compound from a crude iii-v compound
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
CN114990358A (zh) * 2022-04-12 2022-09-02 中南大学 一种掺杂砷烯纳米片、及其制备方法和应用
CN114990358B (zh) * 2022-04-12 2023-02-03 中南大学 一种掺杂砷烯纳米片、及其制备方法和应用

Also Published As

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CH426740A (de) 1966-12-31
NL6414015A (xx) 1965-06-24
DE1544200B2 (de) 1974-06-20
SE319750B (xx) 1970-01-26
GB1087268A (en) 1967-10-18
DE1544200A1 (de) 1970-08-13
NL147645B (nl) 1975-11-17
DE1544200C3 (de) 1975-11-27

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