US3322955A - Camera tube of the kind comprising a semi-conductive target plate to be scanned by an electron beam - Google Patents

Camera tube of the kind comprising a semi-conductive target plate to be scanned by an electron beam Download PDF

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Publication number
US3322955A
US3322955A US522743A US52274366A US3322955A US 3322955 A US3322955 A US 3322955A US 522743 A US522743 A US 522743A US 52274366 A US52274366 A US 52274366A US 3322955 A US3322955 A US 3322955A
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electron beam
target plate
zone
conductivity type
semi
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US522743A
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English (en)
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Desvignes Francois
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Definitions

  • the invention relates to a camera tube comprising a radiation-sensitive target plate of semi-conductive material to be scanned by an electron beam, this plate being in contact with a signal electrode and having two PN junctions of opposite senses, lying one behind the other viewed in the direction of thickness of the plate.
  • the target plate is formed by three parallel layers of a material having a high resistivity, particularly lead monoxide, these layers having the desired conductivity type by deviation from the stoichiometric composition of the material or by the introduction of foreign atoms.
  • the invention has for its object to provide a camera tube of the kind set forth, which has a higher sensitivity than the known tube and in which the target plate may be made of materials which, compared with the material used for the known tube, may have a considerably lower resistivity, so that the number of mate-rials from which a choice can be made for the target plate of the tube is extended.
  • the target plate consists of a mosaic of separate elements, each consisting of two regions of semi-conductive material of the same conductivity type, separated by a region of opposite conductivity type, while at most the region adjacent the signal electrode forms part of a more or less closed layer comprising corresponding regions of further mosaic elements and the thickness of the intermediate region of opposite conductivity has a value which is smaller than the effective diffusion length of the minority carriers therein.
  • the splitting up of the target plate forming an uninterrupted layer in the known structure into separate elements substantially without any interconnection in accordance with the invention results in that, when using a target plate material having a comparatively low resistivity the picture definition, which would otherwise be disturbed by the transverse conduction in the target plate, is not adversely affected.
  • FIG. 1 is a sectional view of a camera tube according to the invention
  • FIG. 2 shows diagrammatically part of the sectional view of the target plate of the tube illustrated in FIG. 1;
  • FIGS. 3 and 4 show diagrammatically embodiments of the tube according to the invention suitable for taking infrared pictures
  • FIGS. 5, 6 and 7 illustrate various stages in the manufacture of a target plate of a tube according to the invention.
  • the camera tube shown in FIG. 1 comprises, inside the evacuated bulb 3, a target plate 1, of which the structure will be described hereinafter with reference to FIG. 2.
  • This target plate 1 is in electrical contact with a signal electrode 2 consisting of a thin transparent and conductive layer, for example, of metal.
  • the target plate 1 with the signal electrode 2 is applied to a window 4 of the bulb 3, in which is arranged, opposite this window an electron gun of the conventional type having cathode 5, a Wehnelt cylinder 6 and a focussing electrode 7.
  • the tube comprises furthermore a deflection system for the horizontal and vertical deflections of the electron beam emanating from the electron gun, directed towards the target plate 1.
  • This deflection system is indicated diagrammatically in FIG. 1 by a single pair of plates 8.
  • the cathode 5 and the signal electrode 2 are connected to a voltage source 9 supplying a constant voltage, in series with the signal resistor 10, from which the image signal to be supplied by the tube is obtained. Owing to the voltage source 9 the signal electrode 2 is at positive potential relative to the cathode 5.
  • the voltage between this cathode and the signal electrode 2 is usually chosen to be of the order of ten volts.
  • FIG. 2 shows diagrammatically part of the section of a target plate 1. It is formed in this case by a monocrystal layer N of n-type silicon, on the surface of which is provided a great number of separate stratified domains P of p-type conductivity. Each of these domains P is in contact, on the electron-gun side, with a stratified domain N of n-type conductivity.
  • the spacing between the separate domains P and the separate domains N provides on the target plate, at least on the side facing the electron gun, a mosaic of discrete elements, each of which has two opposite NP junctions.
  • the thickness of the domains P is chosen so that it is smaller than the effective diffusion length of the minority carriers, in this case elec trons, therein.
  • the domains N are stabilized at the potential of the cathode 5, so that at each mosaic element of the target plate a voltage diflerence is produced.
  • a mosaic element will discharge between two successive scans to a greater or smaller extent by the so-called dark current.
  • this dark current can 'be kept so low that the discharge takes place with a time constant which is great as compared with the duration of an interval between two successive scans of the same mosaic element. In this case the elements of the target plate will in the dark retain substantially a constant charge.
  • the holes will tend to lodge themselves in the domains P. They thus reduce the potential difference between the domains N and P, so that electrons can flow more easily out of the domains N into a subjacent domain P, whereafter owing to the small thickness of the domains P as compared with the diffusion length of the electrons in the material of these domains, they will for the larger part travel into the region N adjoining the signal plate 2.
  • the formation of a number of holes in a mosaic element produces an electron current from the domain N towards the domain N, in which the number of electrons exceeds the said number of holes.
  • the ratio between the number of electrons wandering from a domain N towards a domain N and the number of holes in the intermediate domain P elfecting this electron stream and formed by the incident radiation is equal to the amplification factor a' of the N-P-N structure operating as a phototransistor.
  • the domains N, P and N play the role of an emitter, a base and a collector respectively of a phototransistor.
  • each N domain captures such a number of electrons that the initial voltage difference at this element is restored.
  • the capture of the beam electrons results in an instantaneous voltage difference across the signal resistor 10, which voltage difference is a measure of the discharge of the mosaic element concerned, and hence for the number .of radiation quanta absorbed by this element.
  • the N-P-N structure of the target plate in the tube according to the invention provides in this target plate an amplification which corresponds with the amplification obtained by a transistor driven by a very low current.
  • the tube according to the invention has a sensitivity which materially exceeds that of tubes having a target plate with a single P-N junction.
  • Infrared-sensitive tubes may be obtained by using infrared-sensitive semi-conductive material in the target, for example germanium.
  • the layers obtainable from these materials exhibit, in general, too high a dark current at room temperature, but it is usually sufiicient to provide a comparatively slight cooling to reduce the dark current to an adequately low value; with germanium, for example, the time constant under dark condition is about 1 see. as soon as the temperature of the target plate is lower than 20 C.
  • FIG. 3 shows diagrammatically a useful structure of a tube cooled by the circulation of a fluid in an external vessel 11.
  • the bulb 3 of the tube shown in this figure is identical to that shown in FIG. 1.
  • FIG. 4 shows an embodiment of the camera tube according to the invention in which a mirror optical system 12 is incorporated.
  • the window 4 may serve on the one hand as a correction lens (Schmidtor Maksutowlens) and on the other hand it may provide by direct contact the cooling of the plate of the target by means of the vessel 11.
  • the further elements of the tube are designated by the same reference numerals as in FIG. 1.
  • the method relates to a N-P-N structure on the basis of silicon.
  • a disc A of a diameter of 25 mms. and a thickness of 0.3 mm. is made in known manner by sawing and polishing from a silicon crystal of n-type conductivity and having a resistivity of 1 ohm-cm.
  • the said disc is then etched by immersion into a mixture of hydrofluoric acid, nitric acid and acetic acid, so that the thickness is reduced to about 0.15 mm.
  • the disc is subsequently introduced into a furnace, through which a flow of oxygen under atmospheric pressure is conveyed, while heating takes place at 1100 C.
  • an impermeable silicon oxide layer B having a thickness of about 1
  • the two surfaces of the disc are coated with a photo-sensi-- tive lacquer layer C, which is exposed on one side via a mask D of a pattern of squares and on the other side: uniformly over the entire surface.
  • the non-exposed partsof the lacquer layer i.e. the parts lying behind the small, opaque squares of the mask D, are then removed by means known in photography, after which the disc is immersed into the hydrofluoric acid to dissolve the: silicon-oxide layer B at those areas where the lacquer layer C has been removed.
  • the disc On the front side, only thatpart of the silicon-oxide layer B remains which constitutes the raster pattern. In this stage the disc has the shape shown in a perspective view in FIG. 6. After rinsing, theexposed lacquer, in turn, is removed by means knownin photography, after which arsenic and boron are caused to diffuse simultaneously into the disc.
  • the silicon-oxide layer on the rear side of the disc is removed by immersing it in hydrofluoric acid, and after the protective lacquer layer has been removed from the front side, the silicon is removed from the separate elements and from the rear side of the disc by electrolysis in a diluted potassium solution. Then a target plate is obtained, of which the structure is shown in a sectional view in FIG. 7, in which E designates diffusion having n-type conductivity at the surface and p-type conductivity underneath.
  • a protective layer for example of lacquer
  • the silicon-oxide pattern on the front side of the plate has restricted the diffusion of boron and arsenic to small, separate squares, which exhibit a checkerboard pattern.
  • I have prevented the initial disc material, which has n-type conductivity, from directly receiving electrons of the scanning beam.
  • the method described may also be carried out for producing N-P-N structures by causing other substances, for example, phosphorus and gallium, to diffuse simultaneously or successively.
  • the surface layer of n-type conductivity of the diffusion domains struck by the scanning beam and constituting the emitter has the highest degree of doping of the three domains, whereas the original material of the disc with the lowest degree of doping constitutes the collector.
  • an n-type conductivity layer is coated by surface layers of pand n-type conductivity respectively.
  • a structure is obtained which exhibits uninterrupted layers of small thickness, while in the direction of thickness in nand p-type conductivity on an n-type surface are obtained.
  • a photo-sensitive layer and a mask with a suitable pattern of Openings as the aforesaid method, given domains of the surface layers of pand n-type conductivities may be etched away sharply by means of an acid, so that the desired mosaic is obtained.
  • a radiation sensitive target plate of semi-conductive material said plate being in contact with a signal electrode and comprising a mosaic of separate elements, each of said elements having two regions of semi-conductive material of the same conductivity type separated by a region of opposite conductivity type there by forming two opposite P-N junctions lying one behind the other in the direction of plate thickness, said semiconductive region adjacent the signal electrode forming a substantially uninterrupted layer comprising corresponding regions of further mosaic elements, and wherein the thickness of the intermediate region of opposite conductivity type is smaller than the eifective diffusion length of the minority carriers therein.
  • the target plate comprises a monocrystal layer on which separate domains are formed by diffusion, said domains exhibiting at the surface the same conductivity type as the monocrystal layer and further having a region of opposite conductivity type separating the surface domains from the original material of said layer.
  • a camera tube including a radiation sensitive target plate of semi-conductive material, said plate being in contact with a signal electrode and comprising a mosaic of separate elements, each of said elements having two regions of semi-conductive material of the same conductivity type separated by a region of opposite conductivity type thereby forming two opposite P-N junctions lying one behind the other in the direction of plate thickness, said semi-conductive region adjacent the signal electrode forming a substantially uninterrupted layer comprising corresponding regions of further mosaic elements, and wherein the thickness of the intermediate region of opposite conductivity type is smaller than the effective ditiusion length of the minority carriers therein, and means to electrically scan said target and produce an electrical signal corresponding to an optical image formed on said target plate.
  • An electron discharge device comprising a light sensitive target electrode of semi-conductive material, means for producing an electron beam along a given axis, electron beam scanning means for said target electrode, said target electrode comprising a mosaic of storage elements, each of said elements having two regions of semiconductive material of the same conductivity type separated by an intermediate region of opposite conductivity type thereby forming two opposite P-N junctions lying one behind the other in the direction of said beam axis, the thickness of said intermediate region being less than the effective difiusion length of the minority carriers therein, said intermediate region being shielded from contact with said electron beam by one of said two regions of the same conductivity type, each of said elements being capable of storing an electric charge and having a dis charge time variable with the amount of illumination on said element, means for reverse biasing one of said regions of the same conductivity type, means for illuminating one of said two regions of the same conductivity type with light energy, and a signal electrode connected to the target electrode.
  • An electron discharge device comprising an electron gun for producing an electron beam along a given axis and a radiation sensitive target member disposed in the path of said electron beam, electron beam scanning means for deflecting said beam over said target, said target member comprising a mosaic of semi-conductor elements, each of said elements further comprising pair of outer zones of semi-conductor material of a first conductivity type and an intermediate zone of semi-conductor material of a second conductivity type positioned between and contiguous with said outer zones thereby forming two opposed P-N junctions transverse to said electron beam axis, said intermediate zone having a thickness which is less than the efiective diffusion length of minority carriers in said zone, one of said outer zones substantially shielding said intermediate zone from contact with said scanned electron beam, means for illuminating one of said outer zones with radiation energy to which said target is sensitive, and a load circuit electrically connected to said target member for deriving an electric signal determined by the radiation energy striking said target.
  • An electron discharge device comprising an electron gun for producing an electron beam along a given axis and a radiation sensitive tar-get plate disposed in the path of said electron beam, electron beam scanning means for deflecting said beam over said target, said target plate comprising a mosaic of discrete semi-conductor elements, each of said elements comprising two regions of semi-conductor material of a first conductivity type separated by an intermediate region of semi-conductor material of a second conductivity type thereby forming two opposed P-N junctions lying one behind the other in the direction of said electron beam axis, said intermediate region of second conductivity type having a thickness which is less than the effective diffusion length of the minority carriers in said region, means for illuminating one of said two regions of first conductivity type with radiation energy to which said target is sensitive, and means connected to said target plate for deriving an electric signal.
  • An electron discharge device comprising an electron gun having a cathode for producing an electron beam along a given axis and a target plate responsive to radiant energy transversely disposed in the path of said electron beam, means for scanning said electron beam over the surface of said target plate, said target plate of a semiconductive material having a zone of a first conductivity type having a given cross-sectional area and forming a discontinuous surface facing said electron beam, a second zone of semi-conductor material of a diiferent conductivity type of equal cross-sectional area positioned behind and contiguous to said first zone and shielded from said electron beam by said first zone, a third zone of semiconductor material of said first conductivity type positioned behind and contiguous to said second zone and forming a second surface of said target plate, said first and second zones and said second and third zones each forming a P-N junction transverse to said electron beam axis, said second zone having a thickness dimension in the direction of said beam axis which is less than the effective diffusion length of the minority carriers there

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
US522743A 1959-12-24 1966-01-24 Camera tube of the kind comprising a semi-conductive target plate to be scanned by an electron beam Expired - Lifetime US3322955A (en)

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FR814093A FR1252824A (fr) 1959-12-24 1959-12-24 Tube électronique analyseur d'images et moyens pour sa fabrication

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US74704668 Expired USRE28388E (en) 1959-12-24 1968-07-05 Camera tube op the kind comprising a semiconductive target plate to be scanned by an electron beam

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DE (1) DE1154506B (ko)
FR (1) FR1252824A (ko)
GB (1) GB942406A (ko)
NL (1) NL259237A (ko)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array
US3409797A (en) * 1966-04-26 1968-11-05 Globe Union Inc Image transducing device
US3423623A (en) * 1966-09-21 1969-01-21 Hughes Aircraft Co Image transducing system employing reverse biased junction diodes
US3428850A (en) * 1967-09-12 1969-02-18 Bell Telephone Labor Inc Cathode ray storage devices
US3433994A (en) * 1966-06-14 1969-03-18 Tektronix Inc Camera tube apparatus
US3435234A (en) * 1965-12-29 1969-03-25 Bell Telephone Labor Inc Solid state image translator
US3440476A (en) * 1967-06-12 1969-04-22 Bell Telephone Labor Inc Electron beam storage device employing hole multiplication and diffusion
US3440477A (en) * 1967-10-18 1969-04-22 Bell Telephone Labor Inc Multiple readout electron beam device
US3467880A (en) * 1967-08-21 1969-09-16 Bell Telephone Labor Inc Multiple-image electron beam tube and color camera
US3473076A (en) * 1967-02-01 1969-10-14 Raytheon Co Random address electro-optical switch
US3474285A (en) * 1968-03-27 1969-10-21 Bell Telephone Labor Inc Information storage devices
US3483421A (en) * 1968-02-28 1969-12-09 Goodyear Aerospace Corp Electronic area correlator tube
DE2054411A1 (de) * 1969-11-10 1971-05-19 Western Electric Co Elektronenstrahl Speicherrohre
US3617753A (en) * 1969-01-13 1971-11-02 Tokyo Shibaura Electric Co Semiconductor photoelectric converting device
US3666966A (en) * 1970-07-21 1972-05-30 Wolfgang Joseph Buss Electronic switch
US3720835A (en) * 1967-02-24 1973-03-13 Us Army Scanning infrared radiation sensor
US3735139A (en) * 1972-04-07 1973-05-22 Gen Dynamics Corp Photo detector system with dual mode capability
US3767304A (en) * 1972-07-03 1973-10-23 Ibm Apparatus and method for detection of internal semiconductor inclusions
US3771004A (en) * 1972-02-02 1973-11-06 Itt Reflective multiplier phototube
US3794835A (en) * 1970-04-06 1974-02-26 Hitachi Ltd Image pickup device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7503462A (nl) * 1975-03-24 1976-09-28 Philips Nv Televisieopneembuis.
NL7600425A (nl) * 1976-01-16 1977-07-19 Philips Nv Televisie-opneembuis.

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US2669635A (en) * 1952-11-13 1954-02-16 Bell Telephone Labor Inc Semiconductive photoelectric transducer
US2790088A (en) * 1953-08-10 1957-04-23 Bell Telephone Labor Inc Alternating current gate
US2886739A (en) * 1951-10-24 1959-05-12 Int Standard Electric Corp Electronic distributor devices
US3011089A (en) * 1958-04-16 1961-11-28 Bell Telephone Labor Inc Solid state light sensitive storage device
US3046405A (en) * 1958-01-22 1962-07-24 Siemens Ag Transistor device

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NL192903A (ko) * 1954-03-05
US2812446A (en) * 1954-03-05 1957-11-05 Bell Telephone Labor Inc Photo-resistance device
US2908835A (en) * 1954-10-04 1959-10-13 Rca Corp Pickup tube and target therefor
US3020438A (en) * 1958-07-29 1962-02-06 Westinghouse Electric Corp Electron beam device

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US2886739A (en) * 1951-10-24 1959-05-12 Int Standard Electric Corp Electronic distributor devices
US2669635A (en) * 1952-11-13 1954-02-16 Bell Telephone Labor Inc Semiconductive photoelectric transducer
US2790088A (en) * 1953-08-10 1957-04-23 Bell Telephone Labor Inc Alternating current gate
US3046405A (en) * 1958-01-22 1962-07-24 Siemens Ag Transistor device
US3011089A (en) * 1958-04-16 1961-11-28 Bell Telephone Labor Inc Solid state light sensitive storage device

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3435234A (en) * 1965-12-29 1969-03-25 Bell Telephone Labor Inc Solid state image translator
US3409797A (en) * 1966-04-26 1968-11-05 Globe Union Inc Image transducing device
US3433994A (en) * 1966-06-14 1969-03-18 Tektronix Inc Camera tube apparatus
US3423623A (en) * 1966-09-21 1969-01-21 Hughes Aircraft Co Image transducing system employing reverse biased junction diodes
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array
US3473076A (en) * 1967-02-01 1969-10-14 Raytheon Co Random address electro-optical switch
US3720835A (en) * 1967-02-24 1973-03-13 Us Army Scanning infrared radiation sensor
US3440476A (en) * 1967-06-12 1969-04-22 Bell Telephone Labor Inc Electron beam storage device employing hole multiplication and diffusion
US3467880A (en) * 1967-08-21 1969-09-16 Bell Telephone Labor Inc Multiple-image electron beam tube and color camera
DE1764953B1 (de) * 1967-09-12 1972-05-25 Western Electric Co Speicherschirmstruktur fuer eine Elektronenstrahlspeicherroehre und Elektronenstrahlspeicherroehre mit Speicherschirm
US3428850A (en) * 1967-09-12 1969-02-18 Bell Telephone Labor Inc Cathode ray storage devices
US3440477A (en) * 1967-10-18 1969-04-22 Bell Telephone Labor Inc Multiple readout electron beam device
US3483421A (en) * 1968-02-28 1969-12-09 Goodyear Aerospace Corp Electronic area correlator tube
US3474285A (en) * 1968-03-27 1969-10-21 Bell Telephone Labor Inc Information storage devices
US3617753A (en) * 1969-01-13 1971-11-02 Tokyo Shibaura Electric Co Semiconductor photoelectric converting device
DE2054411A1 (de) * 1969-11-10 1971-05-19 Western Electric Co Elektronenstrahl Speicherrohre
US3794835A (en) * 1970-04-06 1974-02-26 Hitachi Ltd Image pickup device
US3666966A (en) * 1970-07-21 1972-05-30 Wolfgang Joseph Buss Electronic switch
US3771004A (en) * 1972-02-02 1973-11-06 Itt Reflective multiplier phototube
US3735139A (en) * 1972-04-07 1973-05-22 Gen Dynamics Corp Photo detector system with dual mode capability
US3767304A (en) * 1972-07-03 1973-10-23 Ibm Apparatus and method for detection of internal semiconductor inclusions

Also Published As

Publication number Publication date
GB942406A (en) 1963-11-20
DE1154506B (de) 1963-09-19
NL259237A (ko)
USRE28388E (en) 1975-04-08
FR1252824A (fr) 1961-02-03

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