US3182117A - Semiconductor device in coldwelded envelope - Google Patents

Semiconductor device in coldwelded envelope Download PDF

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Publication number
US3182117A
US3182117A US146116A US14611661A US3182117A US 3182117 A US3182117 A US 3182117A US 146116 A US146116 A US 146116A US 14611661 A US14611661 A US 14611661A US 3182117 A US3182117 A US 3182117A
Authority
US
United States
Prior art keywords
envelope
cap
base
flange
flanged portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US146116A
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English (en)
Inventor
Roovers Wilhelmus Antonius
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
North American Philips Co Inc
Original Assignee
US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US3182117A publication Critical patent/US3182117A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
    • H01J5/20—Seals between parts of vessels
    • H01J5/22—Vacuum-tight joints between parts of vessel
    • H01J5/28—Vacuum-tight joints between parts of vessel between conductive parts of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2893/00—Discharge tubes and lamps
    • H01J2893/0033—Vacuum connection techniques applicable to discharge tubes and lamps
    • H01J2893/0037—Solid sealing members other than lamp bases
    • H01J2893/0044—Direct connection between two metal elements, in particular via material a connecting material

Definitions

  • This invention relates to semi-conductor devices, such as transistors or crystal diodes, of the type having an envelope consisting of at least two metallic parts which are connected together in a vacuum-tight manner by means of their flanges.
  • a known method of relatively sealing two flanges consists in providing one flange with several concentric sharp edges and pressing the two flanges one on the other so that the material of these edges is pressed into that of the opposing flange. This method may likewise give rise to deformation to an extent which is impermissible for the comparatively small envelopes usually employed for semiconductor devices.
  • An object of the invention is inter alia to overcome these disadvantages.
  • one flange is provided at its periphery with a sharp ridge with two flanks directed towards the other flange and pressed into the material thereof, the first flange being embraced by a flange edge of the other flange.
  • the flank directed inwardly is at a larger angle to a perpendicular to the surface of the flange than is the flank directed outwardly.
  • the outer flank of the ridge preferably engages part of the inner side of the flange edge according to a cylindrical plane.
  • Such envelopes are usually bodies of revolution, but this is not essential to the invention.
  • FIG. 1 is a cross-sectional view of a diode prior to closure of the envelope
  • FIG. 2 is a sectional view of a diode after the flanges have been united
  • FIG. 3 is a sectional view of the flanges on a larger scale
  • FIG. 4 is a diagrammatic view of a diode and several parts of a press to be used for closing.
  • the envelope shown in these figures is intended for a crystal diode comprising a semi-conductor body 1, which is soldered to a base 2, and a rectifying electrode 3 provided with a supply wire 4.
  • the composition of this semi-conductor system which will otherwise not be described, is in general unimportant for the structure of the envelope. What is important for the structure of the envelope, and this applies to the majority of semi-conductor devices and hence not only to crystal diodes, but also to transistors, photo-electric cells and the like, is that the closure is very reliable and vacuum-tight and 3,182,117 Patented May 4, 1965 that the portion of the base to which the semi-conductor body is secured does not undergo deformation, since its electrical properties are hazarded thereby.
  • the envelope comprises substantially two metallic parts, that is to say the base 2 and a ring or cap 5.
  • the base might be made of copper or aluminum, the ring of iron or of an alloy consisting of iron and chromium.
  • the base 2 has a flange 6 and a threaded stud 7 for securing the envelope to a carrier plate.
  • the centre of the base forms as it were a table to which the semi-conductor body 1 is secured.
  • the ring 5 has a tubular portion provided with a flange 8.
  • a glass insulator 9 having a metallic leadthrough tube 10 is sealed into the tubular portion.
  • the assembly comprising the parts 5, 9 and 10 is usually indicated by cap or bulb.
  • the flange 8 has a sharp ridge 12 provided with two flanks 13 and 14.
  • the ridge 12 is pressed into the material of the other flange 6 and is provided at the periphery of the flange 8 in order that the deformation of the material of the flange 6 which occurs upon pressing-in may substantially be kept away from the centre of the base carrying the body 1.
  • the diam eter of the ridge is, by way of example, 10 mm. in which case the pressing force is about 750 kg.
  • the invention is of course not limited to envelopes of this size; in small envelopes the diameter might be about 5 mm.; in larger envelopes 15 mm.
  • the ridge 12 has an asymmetrical shape, as shown in FIG. 1, and also in FIG.
  • the flank 14 directed inwardly is at an angle a of, for example, about to a perpendicular ON dropped to the surface of the flange 8 indicated by the line OX.
  • This perpendicular is parallel, however, to the flank 13 directed outwardly.
  • the object of this step is to prevent the ridge 12 from bending inwardly upon pressingin, which might also give rise to deformation of the base in the vicinity of the semi-conductor body.
  • the outer flank 13 engages, according to a cylindrical plane, the inner wall 15 of a flange edge 16 provided on the flange 6. It is thus ensured that upon closing by pressing the outer flank 13 is guided in the direction of pressing and neither bent over inwardly, nor outwardly.
  • Closing by pressing may be effected in the usual manner by means of a press (not shown) comprising two dies 20 and 21.
  • the lower die 20 carries the base 2 of the envelope and for this purpose has a bore 22 to receive the threaded stud 7.
  • the upper die 21 has a tubular shape so as to embrace the ring 5.
  • the underside of the die 21 has an inclined edge 23 which causes the flange edge 16 to bend over and at the same time presses the ridge 12 into the flange 6. During this process of closing by pressing, it is not necessary for the flanges 6 and 8 to adjoin each other.
  • the lead-through tube 10 containing the supply wire 4 is closed in the usual manner by pinching, welding or soldering.
  • a semiconductor device comprising a semiconductor element and an envelope hermetically sealing and enclosing the semiconductor element, said envelope comprising base and cap annular metallic members each having annular flanged portions cold-welded together to form a vacuum-tight seal, the cap flanged portion having an upper transverse surface and extending downward from its periphery outer and inner surfaces intersecting at a point remote from the said flanged portion and defining a sharp edge, the semiconductor element being mounted at a central region of the base member and the base flanged portion having a recess surrounding and spaced from the semiconductor element and an upstanding outer wall portion defining said recess, the cap flanged portion fitting within the said recess with the sharp edge pressed deeply into the material underlying the said recess, the outer wall portion defining the recess being pressed over the said transverse surface of the cap flanged portion and tightly into engagement therewith thereby tightly embracing the cap flanged portion.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Die Bonding (AREA)
US146116A 1960-11-09 1961-10-19 Semiconductor device in coldwelded envelope Expired - Lifetime US3182117A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN0011839 1960-11-09

Publications (1)

Publication Number Publication Date
US3182117A true US3182117A (en) 1965-05-04

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ID=7339486

Family Applications (1)

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US146116A Expired - Lifetime US3182117A (en) 1960-11-09 1961-10-19 Semiconductor device in coldwelded envelope

Country Status (4)

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US (1) US3182117A (ja)
CH (1) CH399600A (ja)
GB (1) GB967638A (ja)
NL (1) NL270996A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918625A (en) * 1974-10-03 1975-11-11 Nippert Co Method of making a double extruded semiconductor joint
US4037749A (en) * 1976-03-15 1977-07-26 Bell Telephone Laboratories, Incorporated Hermetically sealed envelope and method of making the same
US20040263007A1 (en) * 2003-05-19 2004-12-30 Wetherill Associates, Inc. Thermal transfer container for semiconductor component
CN104353948A (zh) * 2014-10-17 2015-02-18 郭鑫 一种用于金属缺陷修补机的电极枪

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE270373C (ja) *
GB640252A (en) * 1946-02-26 1950-07-19 Jiri Stivin Improved method of sealing metal vessels of electronic discharge devices
US2794942A (en) * 1955-12-01 1957-06-04 Hughes Aircraft Co Junction type semiconductor devices and method of making the same
US2957236A (en) * 1954-07-07 1960-10-25 Emi Ltd Method of forming hermetic seals by pressure welding metal parts
US3024299A (en) * 1957-04-16 1962-03-06 Philips Corp Cold press bonded semi-conductor housing joint

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE270373C (ja) *
GB640252A (en) * 1946-02-26 1950-07-19 Jiri Stivin Improved method of sealing metal vessels of electronic discharge devices
US2957236A (en) * 1954-07-07 1960-10-25 Emi Ltd Method of forming hermetic seals by pressure welding metal parts
US2794942A (en) * 1955-12-01 1957-06-04 Hughes Aircraft Co Junction type semiconductor devices and method of making the same
US3024299A (en) * 1957-04-16 1962-03-06 Philips Corp Cold press bonded semi-conductor housing joint

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918625A (en) * 1974-10-03 1975-11-11 Nippert Co Method of making a double extruded semiconductor joint
US4037749A (en) * 1976-03-15 1977-07-26 Bell Telephone Laboratories, Incorporated Hermetically sealed envelope and method of making the same
US20040263007A1 (en) * 2003-05-19 2004-12-30 Wetherill Associates, Inc. Thermal transfer container for semiconductor component
US20080042501A1 (en) * 2003-05-19 2008-02-21 Robert Malanga Thermal transfer container for semiconductor component
CN104353948A (zh) * 2014-10-17 2015-02-18 郭鑫 一种用于金属缺陷修补机的电极枪

Also Published As

Publication number Publication date
GB967638A (en) 1964-08-26
CH399600A (de) 1965-09-30
NL270996A (ja)

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