US3024299A - Cold press bonded semi-conductor housing joint - Google Patents

Cold press bonded semi-conductor housing joint Download PDF

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Publication number
US3024299A
US3024299A US725774A US72577458A US3024299A US 3024299 A US3024299 A US 3024299A US 725774 A US725774 A US 725774A US 72577458 A US72577458 A US 72577458A US 3024299 A US3024299 A US 3024299A
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United States
Prior art keywords
metal
semi
envelope
press
surface portions
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Expired - Lifetime
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US725774A
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Nijhuis Herman Cornelis
Roovers Wilhelmus Antonius
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
    • H01J5/20—Seals between parts of vessels
    • H01J5/22—Vacuum-tight joints between parts of vessel
    • H01J5/28—Vacuum-tight joints between parts of vessel between conductive parts of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2893/00—Discharge tubes and lamps
    • H01J2893/0033—Vacuum connection techniques applicable to discharge tubes and lamps
    • H01J2893/0037—Solid sealing members other than lamp bases
    • H01J2893/0044—Direct connection between two metal elements, in particular via material a connecting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49908—Joining by deforming
    • Y10T29/49938—Radially expanding part in cavity, aperture, or hollow body

Definitions

  • This invention relates to a semi-conductor electrode system or device, for example a transistor or a crystal diode, provided with a vacuum-tight envelope made substantially of metal.
  • the envelope comprises at least two parts provided with facing press surfaces, grooves being formed in these surfaces the walls of which are substantially at right angles to the said surfaces, while between these surfaces there is interposed a layer of very soft metal which fills the grooves, one of the said two parts having a flanged rim which embraces the other part and presses and keeps the parts together.
  • very soft metal is to be understood to mean a metal the hardness of which is less than 25 V.P.N. (Vickers Pyramidal Number).
  • the press surface of one part lies in a recess of the other part, a rim of this recess being designed as a flanged rim.
  • the envelope shown in FIG. 1 comprises a base 1 and a cover 2.
  • the base 1 is provided with a press surface located in a recess 3 in its rim constituting a flanged portion; in this recess, there is formed a groove 4 having substantially vertical walls.
  • the cover 2 is provided with a flange 5 the lower side of which forms a press surface in which a groove 6 is formed.
  • a layer 7 consisting of a very soft metal, such as lead, tin or indium, for example in the shape of a ring.
  • the layer may also be produced by melting a soft metal in the recess so that it spreads.
  • the base 1 is laid on a table, there being arranged on the flange 5 of the cover a ram by which the press surfaces are pressed together with such pressure that the grooves 4 and 6 are entirely filled with the soft metal.
  • a flanged rim 8 made from the rim of the recess 3 is pressed over the flange 5 so that the parts 1 and 2 are hermetically joined together.
  • the envelope shown in FIG. 2 comprises a base 11 and a cover 12.
  • Two grooves 13 are formed along the rim of the base 11.
  • the cover 12 has a flange 14 in which two grooves 15 have also been formed.
  • the parts of base and cover in which these grooves are formed again constitute the press surfaces between which a layer 16 of a very soft metal is interposed. These press surfaces have again been pressed together with a high pressure, a flanged rim 17 of the cover 12 being subsequently folded over the base 11.
  • the layers of soft metal 7 and 16 may consist of a metal having a very slight mechanical strength; this layer ensures the vacuum-tight seal but the flanged rims 8 and 17 ensure the mechanical closure of the envelope.
  • base 1 or 11 and the cover 2 or 12 may be made of substantially any metal which otherwise fulfills the requirements to be satisfied by such envelopes. Both iron and copper or brass have proved highly suitable.
  • a semi-conductor device comprising a semi-conductive element, and a vacuum-tight, cold-pressed, metal envelope enclosing said element, said envelope comprising two metal members having outwardly-extending flanged portions with facing surface portions, each of said surface portions containing a groove whose walls are substantially at right angles to their respective surface portion, a separate layer of a very soft metal disposed completely between and cold-press-bonded to both of the facing surface portions and filling both grooves in the surface portions and forming a vacuum-tight bond to and between the metal members, said metal members at the facing surface portions being substantially undeformed by the bonding operation, and a further flanged portion of and integral with one of said metal members embracing a portion of the other member and permanently mechanically joining and holding them together.
  • a semi-conductor device comprising a semi-conductive element, and a vacuum-tight, cold-pressed, metal envelope enclosing said element, said envelope comprising two thermally-conductive metal members, one of said metal members comprising a flat base member having an annular recess along its rim, the other metal member comprising a cup-shaped member with a flanged bottom portion seated in the recess and defining with the bottom wall thereof facing surface portions, each of said surface portions containing a groove, which opposes the groove in the other surface portion, whose walls are substantially at right angles to their respective surface portion, a separate annular layer of a very soft metal disposed in the recess completely between and cold-press-bonded to both of the facing surface portions and filling both grooves in the surface portions and forming a vacuum-tight bond to and between the metal members, said metal members at the facing surface portions being substantially undeformed by the bonding operation, and a further flanged portion of and integral with one of said metal members embracing a portion of
  • a semi-conductor device comprising a semi-conductive element, and a vacuum-tight, cold-pressed, metal envelope enclosing said element, said envelope comprising two metal members having outwardly-extending flanged portions with facing surface portions, said metal members being of soft thermally-conductive metal, each of said surface portions containing a groove whose walls are substantially at right angles to their respective surface portion, said grooves being opposed to one another, a separate layer of a very soft metal disposed completely between and cold-press-bonded to both of the facing surface portions and filling both grooves in the surface portions and forming a vacuum-tight bond to and between the metal members, said metal members at the facing surface portions being substantially undeformed by the bonding operation, and a further flanged portion of and integral with one of the said members embracing a portion of the other member and permanently mechanically joining and holding them together.

Description

March 6, 1962 H. c. NIJHUIS ETAL COLD PRESS BONDED SEMI-CONDUCTOR HOUSING JOINT Filed March 26, 1958 SEMI-C DEVICE FIGJ WWW/WWW INVENTOR HERMAN CORNELIS NIJHUIS WILHELMUS ANTONIUS ROOVERS AGEN United States Patent Ofiice 3,024,299 Patented Mar. 6, 1962 3,024,299 COLD PRESS BONDED SEMI-CONDUCTOR HOUSING JOINT Herman Cornelis Nijhuis and Wilhelmus Antonius Roovers, Mollenhutseweg, Nijmegen, Netherlands, as-
signors to North American Philips Company, Inc., New
York, N.Y., a corporation of Delaware Filed Mar. 26, 1958, Ser. No. 725,774 Claims priority, application Netherlands Apr. 16, 1957 6 Claims. (Cl. 174-50.5)
This invention relates to a semi-conductor electrode system or device, for example a transistor or a crystal diode, provided with a vacuum-tight envelope made substantially of metal.
It has already been proposed for such an envelope to be constituted by at least two parts, facing surfaces of these parts being united together by pressure. In this device, one press surface consisted of a comparatively hard metal and another engaging press surface consisted of a comparatively soft metal, the surface made of the harder metal being provided with at least one groove the lateral walls of which were at substantially right angles to the said surface, while this groove or these grooves was or were filled with the softer metal.
These suggestions referred substantially to combinations of parts the softer of which consisted of metals such as copper and aluminum and the harder of iron and steel. In many semi-conductor electrode systems the heat dissipation is important and in this respect envelope parts made of iron or steel have a limitation in that they have a comparatively high thermal resistance.
It is an object of the present invention to provide a construction in which the envelope can be made substantially entirely from soft metals of good thermal conductivity, such as copper and aluminum.
According to the invention, the envelope comprises at least two parts provided with facing press surfaces, grooves being formed in these surfaces the walls of which are substantially at right angles to the said surfaces, while between these surfaces there is interposed a layer of very soft metal which fills the grooves, one of the said two parts having a flanged rim which embraces the other part and presses and keeps the parts together. The term very soft metal is to be understood to mean a metal the hardness of which is less than 25 V.P.N. (Vickers Pyramidal Number). In a preferred embodiment, the press surface of one part lies in a recess of the other part, a rim of this recess being designed as a flanged rim.
In order that the invention may readily be carried out, two embodiments thereof will now be described by way of example, with reference to the accompanying drawings, the two figures of which each are cross-sectional views of a transistor or a crystal diode, the semi-conductor bodies with the electrodes and the lead-in conductors being shown in block form for the sake of simplicity.
The envelope shown in FIG. 1 comprises a base 1 and a cover 2. The base 1 is provided with a press surface located in a recess 3 in its rim constituting a flanged portion; in this recess, there is formed a groove 4 having substantially vertical walls. The cover 2 is provided with a flange 5 the lower side of which forms a press surface in which a groove 6 is formed. Between the two press surfaces there is interposed in the recess 3 a layer 7 consisting of a very soft metal, such as lead, tin or indium, for example in the shape of a ring. The layer may also be produced by melting a soft metal in the recess so that it spreads. Subsequently, the base 1 is laid on a table, there being arranged on the flange 5 of the cover a ram by which the press surfaces are pressed together with such pressure that the grooves 4 and 6 are entirely filled with the soft metal. Furthermore,
preferably during the application of this pressure, a flanged rim 8 made from the rim of the recess 3 is pressed over the flange 5 so that the parts 1 and 2 are hermetically joined together.
The envelope shown in FIG. 2 comprises a base 11 and a cover 12. Two grooves 13 are formed along the rim of the base 11. The cover 12 has a flange 14 in which two grooves 15 have also been formed. The parts of base and cover in which these grooves are formed again constitute the press surfaces between which a layer 16 of a very soft metal is interposed. These press surfaces have again been pressed together with a high pressure, a flanged rim 17 of the cover 12 being subsequently folded over the base 11.
These constructions have the advantage that the layers of soft metal 7 and 16 may consist of a metal having a very slight mechanical strength; this layer ensures the vacuum-tight seal but the flanged rims 8 and 17 ensure the mechanical closure of the envelope.
An attendant advantage consists in that the base 1 or 11 and the cover 2 or 12 may be made of substantially any metal which otherwise fulfills the requirements to be satisfied by such envelopes. Both iron and copper or brass have proved highly suitable.
The provisions of the grooves 4, 6 and 13, 15 respectively has proved necessary for ensuring a vacuum-tight seal.
What is claimed is:
1. A semi-conductor device comprising a semi-conductive element, and a vacuum-tight, cold-pressed, metal envelope enclosing said element, said envelope comprising two metal members having outwardly-extending flanged portions with facing surface portions, each of said surface portions containing a groove whose walls are substantially at right angles to their respective surface portion, a separate layer of a very soft metal disposed completely between and cold-press-bonded to both of the facing surface portions and filling both grooves in the surface portions and forming a vacuum-tight bond to and between the metal members, said metal members at the facing surface portions being substantially undeformed by the bonding operation, and a further flanged portion of and integral with one of said metal members embracing a portion of the other member and permanently mechanically joining and holding them together.
2. A device as set forth in claim 1 wherein one of the metal members is flat, and the other is cup-shaped with a flanged bottom.
3. A semi-conductor device comprising a semi-conductive element, and a vacuum-tight, cold-pressed, metal envelope enclosing said element, said envelope comprising two thermally-conductive metal members, one of said metal members comprising a flat base member having an annular recess along its rim, the other metal member comprising a cup-shaped member with a flanged bottom portion seated in the recess and defining with the bottom wall thereof facing surface portions, each of said surface portions containing a groove, which opposes the groove in the other surface portion, whose walls are substantially at right angles to their respective surface portion, a separate annular layer of a very soft metal disposed in the recess completely between and cold-press-bonded to both of the facing surface portions and filling both grooves in the surface portions and forming a vacuum-tight bond to and between the metal members, said metal members at the facing surface portions being substantially undeformed by the bonding operation, and a further flanged portion of and integral with one of said metal members embracing a portion of the other member and permanently mechanically joining and holding them together.
4. A device as set forth in claim 3 wherein a corner portion defining the recess in the base member is flangedover and embraces the flanged bottom of the cup-shaped member.
5. A semi-conductor device comprising a semi-conductive element, and a vacuum-tight, cold-pressed, metal envelope enclosing said element, said envelope comprising two metal members having outwardly-extending flanged portions with facing surface portions, said metal members being of soft thermally-conductive metal, each of said surface portions containing a groove whose walls are substantially at right angles to their respective surface portion, said grooves being opposed to one another, a separate layer of a very soft metal disposed completely between and cold-press-bonded to both of the facing surface portions and filling both grooves in the surface portions and forming a vacuum-tight bond to and between the metal members, said metal members at the facing surface portions being substantially undeformed by the bonding operation, and a further flanged portion of and integral with one of the said members embracing a portion of the other member and permanently mechanically joining and holding them together.
6. A device as set forth in claim 5 wherein both metal members are of copper.
References Cited in the file of this patent FOREIGN PATENTS
US725774A 1957-04-16 1958-03-26 Cold press bonded semi-conductor housing joint Expired - Lifetime US3024299A (en)

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Application Number Priority Date Filing Date Title
NL359789X 1957-04-16

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BE (1) BE566767A (en)
CH (1) CH359789A (en)
DE (1) DE1072323B (en)
FR (1) FR1194674A (en)
GB (1) GB826823A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3125709A (en) * 1960-10-17 1964-03-17 Housing assembly
US3182117A (en) * 1960-11-09 1965-05-04 Philips Corp Semiconductor device in coldwelded envelope
US3184831A (en) * 1960-11-16 1965-05-25 Siemens Ag Method of producing an electric contact with a semiconductor device
US3191268A (en) * 1958-02-28 1965-06-29 Gen Motors Corp Process for encapsulating transistors
US3197843A (en) * 1961-05-19 1965-08-03 Nippert Electric Products Comp Method of forming a mount for semiconductors
US3203083A (en) * 1961-02-08 1965-08-31 Texas Instruments Inc Method of manufacturing a hermetically sealed semiconductor capsule
US3217216A (en) * 1962-07-12 1965-11-09 Gianni A Dotto Rotary capacitor apparatus
US3242555A (en) * 1961-06-08 1966-03-29 Gen Motors Corp Method of making a semiconductor package
US3249982A (en) * 1963-01-07 1966-05-10 Hughes Aircraft Co Semiconductor diode and method of making same
US3268779A (en) * 1963-11-06 1966-08-23 Int Rectifier Corp Hermetically sealed semiconductor device
US3358152A (en) * 1963-07-22 1967-12-12 Nicholas G Alexakis Temperature compensated transistor and means for controlling
US3422320A (en) * 1965-12-23 1969-01-14 Gen Motors Corp Sealing technique for composite ferrous-copper base alloy capsules for semiconductor devices
US3937383A (en) * 1975-03-24 1976-02-10 Continental Can Company, Inc. High speed room temperature seam bonding of metal sheets
US4037749A (en) * 1976-03-15 1977-07-26 Bell Telephone Laboratories, Incorporated Hermetically sealed envelope and method of making the same
US20040232834A1 (en) * 2000-08-31 2004-11-25 Costello Kenneth A. Unitary vacuum tube incorporating high voltage isolation
US20130167482A1 (en) * 2011-09-08 2013-07-04 Advanced Numicro Systems, Inc. Vacuum sealing process of a mems package

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB956054A (en) * 1960-10-26 1964-04-22 Asea Ab Semi-conductor device with a gas-tight casing
DE1210489B (en) * 1961-08-10 1966-02-10 Siemens Ag Semiconductor component with a semiconductor element enclosed in a gastight manner in a housing
DE1237695B (en) * 1961-10-24 1967-03-30 Siemens Ag Semiconductor arrangement with a semiconductor element enclosed in a gas-tight housing
DE1218620B (en) * 1962-02-05 1966-06-08 Siemens Ag Application of electrical resistance soldering to the vacuum-tight sealing of a semiconductor arrangement
DE1514473C3 (en) * 1965-06-05 1981-08-20 Siemens AG, 1000 Berlin und 8000 München Semiconductor component
GB2132601B (en) * 1982-12-23 1986-08-20 Ferranti Plc Joining articles of materials of different expansion coefficients

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1512298A (en) * 1919-11-12 1924-10-21 Adolph Mueller Pipe coupling
US1783791A (en) * 1928-11-08 1930-12-02 New Departure Mfg Co Method of assembling antifriction bearings
US2342422A (en) * 1942-05-05 1944-02-22 Walworth Patents Inc High pressure joint
CH243668A (en) * 1944-04-29 1946-07-31 Sulzer Ag Drum rotor assembled from individual disks and process for its manufacture.
US2701483A (en) * 1950-07-12 1955-02-08 Gen Electric Co Ltd Method of securing inserts in ductile metal members by pressure welding
US2754065A (en) * 1952-04-25 1956-07-10 Jesse E Hawley Railroad rail joint construction
US2763708A (en) * 1950-07-11 1956-09-18 Joseph B Brennan Closure, terminal and mounting constructions for electrical devices
US2777974A (en) * 1955-06-08 1957-01-15 Bell Telephone Labor Inc Protection of semiconductive devices by gaseous ambients
US2808543A (en) * 1956-01-30 1957-10-01 Hughes Aircraft Co Mounting means for semiconductor crystal body
US2825014A (en) * 1953-11-30 1958-02-25 Philips Corp Semi-conductor device
US2852722A (en) * 1955-08-09 1958-09-16 British Thomson Houston Co Ltd Electric rectifiers employing semi-conductors
US2932684A (en) * 1956-09-10 1960-04-12 Philco Corp Semi-conductor units and methods of making them

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1512298A (en) * 1919-11-12 1924-10-21 Adolph Mueller Pipe coupling
US1783791A (en) * 1928-11-08 1930-12-02 New Departure Mfg Co Method of assembling antifriction bearings
US2342422A (en) * 1942-05-05 1944-02-22 Walworth Patents Inc High pressure joint
CH243668A (en) * 1944-04-29 1946-07-31 Sulzer Ag Drum rotor assembled from individual disks and process for its manufacture.
US2763708A (en) * 1950-07-11 1956-09-18 Joseph B Brennan Closure, terminal and mounting constructions for electrical devices
US2701483A (en) * 1950-07-12 1955-02-08 Gen Electric Co Ltd Method of securing inserts in ductile metal members by pressure welding
US2754065A (en) * 1952-04-25 1956-07-10 Jesse E Hawley Railroad rail joint construction
US2825014A (en) * 1953-11-30 1958-02-25 Philips Corp Semi-conductor device
US2777974A (en) * 1955-06-08 1957-01-15 Bell Telephone Labor Inc Protection of semiconductive devices by gaseous ambients
US2852722A (en) * 1955-08-09 1958-09-16 British Thomson Houston Co Ltd Electric rectifiers employing semi-conductors
US2808543A (en) * 1956-01-30 1957-10-01 Hughes Aircraft Co Mounting means for semiconductor crystal body
US2932684A (en) * 1956-09-10 1960-04-12 Philco Corp Semi-conductor units and methods of making them

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3191268A (en) * 1958-02-28 1965-06-29 Gen Motors Corp Process for encapsulating transistors
US3125709A (en) * 1960-10-17 1964-03-17 Housing assembly
US3182117A (en) * 1960-11-09 1965-05-04 Philips Corp Semiconductor device in coldwelded envelope
US3184831A (en) * 1960-11-16 1965-05-25 Siemens Ag Method of producing an electric contact with a semiconductor device
US3203083A (en) * 1961-02-08 1965-08-31 Texas Instruments Inc Method of manufacturing a hermetically sealed semiconductor capsule
US3197843A (en) * 1961-05-19 1965-08-03 Nippert Electric Products Comp Method of forming a mount for semiconductors
US3242555A (en) * 1961-06-08 1966-03-29 Gen Motors Corp Method of making a semiconductor package
US3217216A (en) * 1962-07-12 1965-11-09 Gianni A Dotto Rotary capacitor apparatus
US3249982A (en) * 1963-01-07 1966-05-10 Hughes Aircraft Co Semiconductor diode and method of making same
US3358152A (en) * 1963-07-22 1967-12-12 Nicholas G Alexakis Temperature compensated transistor and means for controlling
US3268779A (en) * 1963-11-06 1966-08-23 Int Rectifier Corp Hermetically sealed semiconductor device
US3422320A (en) * 1965-12-23 1969-01-14 Gen Motors Corp Sealing technique for composite ferrous-copper base alloy capsules for semiconductor devices
US3937383A (en) * 1975-03-24 1976-02-10 Continental Can Company, Inc. High speed room temperature seam bonding of metal sheets
US4037749A (en) * 1976-03-15 1977-07-26 Bell Telephone Laboratories, Incorporated Hermetically sealed envelope and method of making the same
US20040232834A1 (en) * 2000-08-31 2004-11-25 Costello Kenneth A. Unitary vacuum tube incorporating high voltage isolation
US7325715B2 (en) * 2000-08-31 2008-02-05 Interac, Inc. Unitary vacuum tube incorporating high voltage isolation
US20130167482A1 (en) * 2011-09-08 2013-07-04 Advanced Numicro Systems, Inc. Vacuum sealing process of a mems package

Also Published As

Publication number Publication date
DE1072323B (en)
FR1194674A (en) 1959-11-12
BE566767A (en)
CH359789A (en) 1962-01-31
GB826823A (en) 1960-01-20

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