US3162767A - Method for nondestructive testing by using a defocussed electron beam - Google Patents

Method for nondestructive testing by using a defocussed electron beam Download PDF

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Publication number
US3162767A
US3162767A US220987A US22098762A US3162767A US 3162767 A US3162767 A US 3162767A US 220987 A US220987 A US 220987A US 22098762 A US22098762 A US 22098762A US 3162767 A US3162767 A US 3162767A
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United States
Prior art keywords
electron beam
film
thin film
component
substrate
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US220987A
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English (en)
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Curcio Robert A Di
Jr Willard F Stillwell
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RTX Corp
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United Aircraft Corp
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Priority to NL297262D priority Critical patent/NL297262A/xx
Application filed by United Aircraft Corp filed Critical United Aircraft Corp
Priority to US220987A priority patent/US3162767A/en
Priority to GB34741/63D priority patent/GB1011173A/en
Priority to FR946477A priority patent/FR1384627A/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
    • H01C17/2404—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Definitions

  • Electron beam machines are devices which use the kinetic energy of an electron beam to work a material.
  • the electron beam is a welding, cutting and machining tool which has practically no mass but has high kinetic energy because of the extremely high velocity imparted to the electrons. Transfer of this kinetic energy to the lattice electrons of the workpiece, which is usually but not necessarily also located in the vacuum chamber, generates higher lattice vibrations which cause an increase in the temperature within the impingement area sutficient to accomplish work.
  • Electron beam machines are particularly advantageous tools for use in the production of microelectronic components. A number of characteristics of these machines are quite unique and thus add significantaly to their utility. For example, with an electron beam it is possible to achieve extremely high power density, up to ten billion watts per square inch. As is well known in the art, beam power density is a function of beam current. electron accelerating voltage and beam focus or spot size. With such power density the beam can locally heat, fuse, or vaporize materials as desired. These processes can be easily and precisely controlled since the cross-sectional diameter of the beam can be varied from tenths of a thousandth of an inch up to many thousandths.
  • the power input of the beam can be varied from less than a watt up to many kilowatts, and since the beam can be focused and deflected by electrical means, the position or point of impingement of the beam upon the workpiece can be controlled with extreme accuracy.
  • electron beam processes are extremely pure in a chemical sense. Electrons do not have chemical or material properties and since these processes are normally carried out in a high vacuum the concentration of foreign atoms is extremely low.
  • the manufacture of thin film electronic components was a three step process.
  • the first step comprised the vapor deposition of the thin film on a substrate.
  • U.S. Patent No. 2,746,420, issued May 22, 1956, to K. H. Steigcrwald. discloses an apparatus utilizing an electron beam as the heat source for evaporating the material to be deposited as a thin film.
  • the vapor deposition process was followed by the step of scribing the dcsircd components in the film. This step usually entailed removing the coated substrate from the vacuum chamber of the vapor deposition apparatus, masking the film and utilizing a chemical etching process to locally remove portions of the film.
  • the third step consisted of nondestructive testing of the components formed in the etching step.
  • this testing step consisted merely of an electrical continuity test or resistance 3,162,767.
  • Patented Dec. 22, 1964 ice measurement which often failed to reveal tiny cracks or flaws in the film which would cause failure of the component during use in its intended environment.
  • quality control of a thin film component manufacturing process is virtually impossible since even when an electrical test indicates a defective component the cause of the defect can usually not be determined.
  • Our invention overcomes the above-mentioned disadvantages of the prior art by providing a continuous process for the fabrication and testing of thin film electronic components which allows faster and more accurate fabrication of these components and which permits testing the thus formed components for microscopic flaws.
  • the process comprises directing a beam of charged particles against an evaporant causing it to be heated and thus vaporized.
  • the vapor thus formed will condense on a plurality of substrates which have been properly positioned in the chamber above the evaporant.
  • the coated substrates are then repositioned in the chamber so as to be in the line of the beam of charged particles and the focus and intensity of the beam are readjusted.
  • the beam is then directed across the surface of the substrate in a prescribed manner so as to trace the desired thin film component.
  • the small diameter, high intensity moving beam causes local evaporation of discrete lines of the film and thus etches the component.
  • the beam is defocused or its power density otherwise reduced by decreasing the beam intensity by downwardly adjusting beam current and/or acceleration voltage, and the defocused beam played across the surface of the film.
  • An essential feature of this invention lies in our discovery that a low power density electron beam will cause the substrate, which is usually a ceramic such as alumina, to fiouresce brightly. By using a microscope associated with the charged particle generator, the fluorescent substrate can be observed and fiaws or discontinuities in the film will be readily apparent to the operator.
  • FIGURE 1 discloses an electron beam generator adapted to be used in the performance of our invention.
  • FIGURE 2 is a view of the evacuated work chamber of the device of FlGURl-I l.
  • FIGURE 3 is an end view of the charge carrier shown in FIGURES 1 and 2.
  • FIGURE 4 is an enlarged view of a thin film resistor fabricated and tested in accordance with our invention.
  • an electron beam machine having an electron gun chamber 10, a beam focusing column 12 and an evacuated work chamber 14.
  • a directly heated cathode 16 for emitting electrons which are accelerated down column 12 by a difference in potential between cathode 16 and anode 18.
  • a grid cup 20 Surrounding cathode 16 is a grid cup 20 which is biased at a voltage which is more negative than the voltage applied to cathode 16. The magnitude of this bias controls the beam current while, due to the shape of the grid. lllsr) aiding in the focusing of the beam.
  • the electrons which are accelerated down column 12 are focused into a narrow beam, indicated by reference numeral 22, by upper adjusting coil 24, lower adjusting coil 26, magnetic lens assembly 29 and upper and lower diaphragms 28 and 30.
  • the beam 22 passes down a tube 32, which is suspended in column 12, into work chamber 14 where it impinges upon the work and consequently, gives up its kinetic energy in the form of heat.
  • the material to be worked may be moved beneath the beam and the beam may be deflected over limited areas of the material by means of deflection coils 34.
  • the material being worked is observed visually through an optical viewing system, part of which is not shown, comprising a viewing light 38 which is focused on the material by mirrors 40 and 42.
  • the light path is shown as a dashed line 46.
  • the image of the work is transmitted back up the light path, reflected by mirrors 40 and 42, and transmitted via optical column 48 which includes lens 50 to a system including a microscope, not shown, wherein it is enlarged and viewed by an operator.
  • optical column 48 Positioned between beam column 12 and optical column 48 is a piece of leaded glass 52 which protects the operator from X-rays gen-- erated during the electron beam operation.
  • This apparatus consists of a device 60 preferably having the shape of a portion of a cylinder. Afiixed to one end of device 60 is a circular gear 62 which is engaged by gear 63 which is in turn driven by a motor, not shown. The device 60 and gear 62 are supported in the work chamber by and are rotatable about member 64 and shaft 66. Attached to the inner surface of device 60 are a pair of supports 68 and 70 on which are afiixed by suitable means the substrates to be coated and then scribed. Also located in chamber 14 is a movable table 72 which rides on a track 74. Table 72 is adapted to carry a crucible 76 which, as can be clearly seen from FIGURE 3, extends from one side of the table. Crucible 76 is counterbalanced by a weight 78.
  • the performance of our novel process is accomplished in the following manner.
  • the substrates to be coated are positioned on supports 68 and 70 and device 60 is rotated so that a hole 61 in the top thereof is aligned with the axis of the beam 22.
  • the crucible 76 is loaded with the evaporant and is then positioned by table 72 so as to also be in line with beam 22 which will pass through hole 61.
  • Work chamber 14 is then evacuated by means not shown and the beam intensity and focus controls on the electron beam generator are adjusted to the values necessary to cause evaporation of the material in crucible 76.
  • the beam generator is then activated and the beam impinges upon the evaporant causing it to vaporize.
  • FIGURES 2 and 3 The vapors rising from crucible 76 will condense upon the substrates carried by supports 68 and 70. This step is depicted by FIGURES 2 and 3.
  • FIGURES 2 and 3 By proper selection of the angles and spacial relation between the supports and the crucible, an even film will be deposited on the substrates. It is, of course, understood that the substrate may be masked to prevent vapor from being deposited in certain regions such as a margin around the edges.
  • the thickness of the film on the substrate can be monitored by means of photoelectric devices which sense the brightness and color of a light source as it appears through a transparent surface which is also exposed to the vapor emanating from the crucible.
  • photoelectric devices may be used to gate a control circuit for automatically causing the beam 22 to be biased oil when the film has achieved the desired thickness.
  • the beam generator is deactivated and table 72 is moved back out of the way. As can be seen from FIGURE 1.
  • device 60 is then rotated until a first one of the supports 68 is aligned with the beam axis.
  • the controls of the beam generator are then reset so that a highly focused, intense beam will be produced.
  • the beam generator is reactivated and the beam deflected across the surface of the substrate by means of varying the current supplied to deflection coils 34. This step may be carried on manually by an operator viewing the work through the optical system or the beam deflection maybe programmed by computer means known in the art.
  • the intense moving beam will scribe, by local evaporation, discrete lines or patterns on the previously deposited film.
  • FIG- URE 4 shows a typical thin film indicator which has been electron beam scribed to a precisely predetermined resistance value.
  • the actual size of the resistor shown in FIGURE 4 is .35 inch square and .01 inch thick.
  • leads would be attached to the contact pads indicated by reference numerals 80 and 82. At this point in the process, if desired, the leads which may have previously been positioned against the contact pads can be welded to the thin film device with the electron beam.
  • the electron beam is either defocused or its intensity reduced.
  • a particularly novel feature of this invention is permitted by our discovery that a low power density beam of high energy electrons such as that available from an electron beam cutting or welding machine will cause a substrate upon which the beam impinges to fluoresee brilliantly, thereby revealing flaws of discontinuities that would be completely invisible even under high magnification and otherwise undectatable.
  • the machine parameters were set so as to provide an electron beam having between 40 and 60 microamperes of beam current with an acceleration voltage kv. Thereafter, the testing pro cedure was accomplished, while maintaining the aforementioned beam current and acceleration voltage, by changing the spot size from a one and one-half mil diameter beam utilized for scribing to a 30 mil diameter beam for testing by reducing the current to the magnetic lens assembly from 90 milliamperes to between 5 and 10 milliamperes.
  • the defocused beam is played back and forth across the surface of the thin film component by varying the current to deflection coils 34 while the component is viewed by the operator through the optical system. Flaws and discontinuities are made readily visible during this step even when the thin film component is covered by protective SiO.
  • the film will mask the fluorescence and thus light will appear only in areas where the beam has scribed a line or where there is a defect in the film.
  • the hair-line cracks in the film indicated at 84 which cracks have been greatly exaggerated in size, will pass light from the fluorescent substrate and will thus. due in part to the contrast with the uncracked film, be readily apparent to the operator.
  • the cracks indicated at 84 would not be revealed by resistance measurements or examination with a microscope and would, in the case of vibration, spread thereby causing failure of the component. Not only does the fluorescence produced by the defocused beam reveal inherent tlaws in metallic coatings, but it also serves as a valuable method of visually observing the thin film component in order to determine whether the metal film is completely removed from the scribed areas, whether the appropriate pads are completely isolated, and whether the scribing has initiated incipient discontinuities in the resistant film. This step will also yield information as to the surface condition of the substrate. For example, virgin alumina fluoresccs light red, but fiuoresces green after being lightly fused with an electron beam bombardment, and this green will change to blue with violet bombardment which produces more pronounced fusion of the surface.
  • our invention provides a valuable tool for use in the manufacture and testing of microelectronic devices.
  • our invention has proved to be exceptionally valuable in testing both devices made in the manner described above and also devices made by other processes and then placed in the electron beam machine for examination. That is, our invention has utility in connection with investigations concerning the properties of all thin metallic films vapor deposited or otherwise deposited on substrates such as alumina, various metalized layers such as moly-manganese fired on substrates, and electron beam or otherwise scribed thin film components.
  • a method for the nondestructive testing of electronic circuit components which have been fabricated by the deposition of at least one film of conductive or semiconductive material on the surface or surfaces of a nonconductive substrate comprising:
  • step of placing the component generally in the path of the beam of electrons comprises:

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  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
US220987A 1962-09-04 1962-09-04 Method for nondestructive testing by using a defocussed electron beam Expired - Lifetime US3162767A (en)

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NL297262D NL297262A (is") 1962-09-04
US220987A US3162767A (en) 1962-09-04 1962-09-04 Method for nondestructive testing by using a defocussed electron beam
GB34741/63D GB1011173A (en) 1962-09-04 1963-09-03 Improvements in and relating to the making and testing of thin film articles
FR946477A FR1384627A (fr) 1962-09-04 1963-09-03 Analyseur à faisceau électronique défocalisé

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3251536A (en) * 1963-10-08 1966-05-17 Cons Vacuum Corp Getter-ion pumps
US3293587A (en) * 1965-10-20 1966-12-20 Sprague Electric Co Electrical resistor and the like
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US3404255A (en) * 1965-06-23 1968-10-01 Bendix Corp Source of vaporizable material for bombardment thereof by an electron bombarding means
US3420978A (en) * 1965-06-30 1969-01-07 Nasa Pretreatment method for antiwettable materials
US3447366A (en) * 1965-06-22 1969-06-03 Humberto Fernandez Moran Villa Process of determining dimensions and properties of cutting edges of molecular dimensions
US3485997A (en) * 1965-11-26 1969-12-23 Balzers Patent Beteilig Ag Process and apparatus for the thermal vaporization of mixtures of substances in a vacuum
US3607382A (en) * 1967-10-23 1971-09-21 Heinz Henker Method of producing photovarnish masks for semiconductors
DE2832151A1 (de) * 1977-07-25 1979-02-15 Vlsi Technology Res Ass Verfahren zum pruefen und retuschieren einer fotomaske sowie dafuer verwendbare fotomaske
US4609809A (en) * 1983-03-16 1986-09-02 Hitachi, Ltd. Method and apparatus for correcting delicate wiring of IC device
US20130185913A1 (en) * 2012-01-24 2013-07-25 Kabushiki Kaisha Yaskawa Denki Production system and article producing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57129156U (is") * 1981-02-04 1982-08-12

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1640567A (en) * 1925-07-20 1927-08-30 Univ Michigan Machine for detecting flaws
US2259400A (en) * 1938-08-17 1941-10-14 Robert C Switzer Flaw detection
US2746420A (en) * 1951-11-05 1956-05-22 Steigerwald Karl Heinz Apparatus for evaporating and depositing a material
US3049618A (en) * 1959-05-13 1962-08-14 Commissariat Energie Atomique Methods and devices for performing spectrum analysis, in particular in the far ultraviolet region

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1640567A (en) * 1925-07-20 1927-08-30 Univ Michigan Machine for detecting flaws
US2259400A (en) * 1938-08-17 1941-10-14 Robert C Switzer Flaw detection
US2746420A (en) * 1951-11-05 1956-05-22 Steigerwald Karl Heinz Apparatus for evaporating and depositing a material
US3049618A (en) * 1959-05-13 1962-08-14 Commissariat Energie Atomique Methods and devices for performing spectrum analysis, in particular in the far ultraviolet region

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US3251536A (en) * 1963-10-08 1966-05-17 Cons Vacuum Corp Getter-ion pumps
US3447366A (en) * 1965-06-22 1969-06-03 Humberto Fernandez Moran Villa Process of determining dimensions and properties of cutting edges of molecular dimensions
US3404255A (en) * 1965-06-23 1968-10-01 Bendix Corp Source of vaporizable material for bombardment thereof by an electron bombarding means
US3420978A (en) * 1965-06-30 1969-01-07 Nasa Pretreatment method for antiwettable materials
US3293587A (en) * 1965-10-20 1966-12-20 Sprague Electric Co Electrical resistor and the like
US3485997A (en) * 1965-11-26 1969-12-23 Balzers Patent Beteilig Ag Process and apparatus for the thermal vaporization of mixtures of substances in a vacuum
US3607382A (en) * 1967-10-23 1971-09-21 Heinz Henker Method of producing photovarnish masks for semiconductors
DE2832151A1 (de) * 1977-07-25 1979-02-15 Vlsi Technology Res Ass Verfahren zum pruefen und retuschieren einer fotomaske sowie dafuer verwendbare fotomaske
US4256778A (en) * 1977-07-25 1981-03-17 Vlsi Technology Research Association Method of inspecting and retouching a photo mask
US4609809A (en) * 1983-03-16 1986-09-02 Hitachi, Ltd. Method and apparatus for correcting delicate wiring of IC device
US20130185913A1 (en) * 2012-01-24 2013-07-25 Kabushiki Kaisha Yaskawa Denki Production system and article producing method
US9272377B2 (en) * 2012-01-24 2016-03-01 Kabushiki Kaisha Yaskawa Denki Production system and article producing method

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GB1011173A (en) 1965-11-24

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